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Abnormally enhanced Hall Lorenz number in the magnetic Weyl semimetal NdAlSi
Authors:
Nan Zhang,
Daifeng Tu,
Ding Li,
Kaixin Tang,
Linpeng Nie,
Houpu Li,
Hongyu Li,
Tao Qi,
Tao Wu,
Jianhui Zhou,
Ziji Xiang,
Xianhui Chen
Abstract:
In Landau's celebrated Fermi liquid theory, electrons in a metal obey the Wiedemann--Franz law at the lowest temperatures. This law states that electron heat and charge transport are linked by a constant $L_0$, i.e., the Sommerfeld value of the Lorenz number ($L$). Such relation can be violated at elevated temperatures where the abundant inelastic scattering leads to a reduction of the Lorenz numb…
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In Landau's celebrated Fermi liquid theory, electrons in a metal obey the Wiedemann--Franz law at the lowest temperatures. This law states that electron heat and charge transport are linked by a constant $L_0$, i.e., the Sommerfeld value of the Lorenz number ($L$). Such relation can be violated at elevated temperatures where the abundant inelastic scattering leads to a reduction of the Lorenz number ($L < L_0$). Here, we report a rare case of remarkably enhanced Lorenz number ($L > L_0$) discovered in the magnetic topological semimetal NdAlSi. Measurements of the transverse electrical and thermal transport coefficients reveal that the Hall Lorenz number $L_{xy}$ in NdAlSi starts to deviate from the canonical value far above its magnetic ordering temperature. Moreover, $L_{xy}$ displays strong nonmonotonic temperature and field dependence, reaching its maximum value close to 2$L_0$ in an intermediate parameter range. Further analysis excludes charge-neutral excitations as the origin of enhanced $L_{xy}$. Alternatively, we attribute it to the Kondo-type elastic scattering off localized 4$f$ electrons, which creates a peculiar energy distribution of the quasiparticle relaxation time. Our results provide insights into the perplexing transport phenomena caused by the interplay between charge and spin degrees of freedom.
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Submitted 26 November, 2024;
originally announced November 2024.
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Shear-enhanced Liquid Crystal Spinning of Conjugated Polymer Fibers
Authors:
Hao Jiang,
Chi-yuan Yang,
Deyu Tu,
Zhu Chen,
Wei Huang,
Liang-wen Feng,
Hengda Sun,
Hongzhi Wang,
Simone Fabiano,
Meifang Zhu,
Gang Wang
Abstract:
Conjugated polymer fibers can be used to manufacture various soft fibrous optoelectronic devices, significantly advancing wearable devices and smart textiles. Recently, conjugated polymer-based fibrous electronic devices have been widely used in energy conversion, electrochemical sensing, and human-machine interaction. However, the insufficient mechanical properties of conjugated polymer fibers, t…
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Conjugated polymer fibers can be used to manufacture various soft fibrous optoelectronic devices, significantly advancing wearable devices and smart textiles. Recently, conjugated polymer-based fibrous electronic devices have been widely used in energy conversion, electrochemical sensing, and human-machine interaction. However, the insufficient mechanical properties of conjugated polymer fibers, the difficulty in solution processing semiconductors with rigid main chains, and the challenges in large-scale continuous production have limited their further development in the wearable field. We regulated the pi - pi stacking interactions in conjugated polymer molecules below their critical liquid crystal concentration by applying fluid shear stress. We implemented secondary orientation, leading to the continuous fabrication of anisotropic semiconductor fibers. This strategy enables conjugated polymers with rigid backbones to synergistically enhance the mechanical and semiconductor properties of fibers through liquid crystal spinning. Furthermore, conjugated polymer fibers, exhibiting excellent electrochemical performance and high mechanical strength (600 MPa) that essentially meet the requirements for industrialized preparation, maintain stability under extreme temperatures, radiation, and chemical reagents. Lastly, we have demonstrated logic circuits using semiconductor fiber organic electrochemical transistors, showcasing its application potential in the field of wearable fabric-style logic processing. These findings confirm the importance of the liquid crystalline state and solution control in optimizing the performance of conjugated polymer fibers, thus paving the way for developing a new generation of soft fiber semiconductor devices.
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Submitted 6 March, 2024; v1 submitted 5 March, 2024;
originally announced March 2024.
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Orbital origin of fourfold anisotropic magnetoresistance in Dirac materials
Authors:
Daifeng Tu,
Can Wang,
Jianhui Zhou
Abstract:
Fourfold anisotropic magnetoresistance (AMR) have been widely observed in quantum materials, but the underlying mechanisms remain poorly understood. Here we find, in a variety of three-dimensional Dirac materials that can be unifiedly described by the massive Dirac equation, the intrinsic orbital magnetic moment of electrons vary synchronously with the magnetic field and give rise to a π periodic…
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Fourfold anisotropic magnetoresistance (AMR) have been widely observed in quantum materials, but the underlying mechanisms remain poorly understood. Here we find, in a variety of three-dimensional Dirac materials that can be unifiedly described by the massive Dirac equation, the intrinsic orbital magnetic moment of electrons vary synchronously with the magnetic field and give rise to a π periodic correction to its velocity, further leading to unusual fourfold AMR, dubbed orbital fourfold AMR. Our theory not only explains the observation of fourfold AMR in bismuth but also uncovers the nature of the dominant fourfold AMR in thin films of antiferromagnetic topological insulator MnBi2Te4, which arises from the near cancellation of the twofold AMR from the surface states and bulk states due to distinct spin-momentum lockings. Our work provides a new mechanism for creation and manipulation of orbital fourfold AMR in both conventional conductors and various topological insulators.
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Submitted 21 July, 2025; v1 submitted 2 February, 2024;
originally announced February 2024.
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Synergistic Effect of Multi-Walled Carbon Nanotubes and Ladder-Type Conjugated Polymers on the Performance of N-Type Organic Electrochemical Transistors
Authors:
S. Zhang,
M. Massetti,
T. P. Ruoko,
D. Tu,
C. Y. Yang,
X. Liu,
Z. Wu,
Y. Lee,
R. Kroon,
P. Persson,
H. Y. Woo,
M. Berggren,
C. Müller,
M. Fahlman,
S. Fabiano
Abstract:
Organic electrochemical transistors (OECTs) have the potential to revolutionize the field of organic bioelectronics. To date, most of the reported OECTs include p-type (semi-)conducting polymers as the channel material, while n-type OECTs are yet at an early stage of development, with the best performing electron-transporting materials still suffering from low transconductance, low electron mobili…
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Organic electrochemical transistors (OECTs) have the potential to revolutionize the field of organic bioelectronics. To date, most of the reported OECTs include p-type (semi-)conducting polymers as the channel material, while n-type OECTs are yet at an early stage of development, with the best performing electron-transporting materials still suffering from low transconductance, low electron mobility, and slow response time. Here, the high electrical conductivity of multi-walled carbon nanotubes (MWCNTs) and the large volumetric capacitance of the ladder-type π-conjugated redox polymer poly(benzimidazobenzophenanthroline) (BBL) are leveraged to develop n-type OECTs with record-high performance. It is demonstrated that the use of MWCNTs enhances the electron mobility by more than one order of magnitude, yielding fast transistor transient response (down to 15 ms) and high uC* (electron mobility x volumetric capacitance) of about 1 F/cmVs. This enables the development of complementary inverters with a voltage gain of > 16 and a large worst-case noise margin at a supply voltage of < 0.6 V, while consuming less than 1 uW of power.
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Submitted 18 January, 2024;
originally announced January 2024.
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Surface skyrmions and dual topological Hall effect in antiferromagnetic topological insulator EuCd$_2$As$_2$
Authors:
Min Wu,
R. Yang,
Xiangde Zhu,
Yixiong Ren,
Ang Qian,
Yongjie Xie,
Changming Yue,
Yong Nie,
Xiang Yuan,
Ning Wang,
Daifeng Tu,
Ding Li,
Yuyan Han,
Zhaosheng Wang,
Yaomin Dai,
Guolin Zheng,
Jianhui Zhou,
Wei Ning,
Xianggang Qiu,
Mingliang Tian
Abstract:
In this work, we synthesized single crystal of EuCd$_2$As$_2$, which exhibits A-type antiferromagnetic (AFM) order with in-plane spin orientation below $T_N$ = 9.5~K.Optical spectroscopy and transport measurements suggest its topological insulator (TI) nature with an insulating gap around 0.1eV. Remarkably, a dual topological Hall resistivity that exhibits same magnitude but opposite signs in the…
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In this work, we synthesized single crystal of EuCd$_2$As$_2$, which exhibits A-type antiferromagnetic (AFM) order with in-plane spin orientation below $T_N$ = 9.5~K.Optical spectroscopy and transport measurements suggest its topological insulator (TI) nature with an insulating gap around 0.1eV. Remarkably, a dual topological Hall resistivity that exhibits same magnitude but opposite signs in the positive to negative and negative to positive magnetic field hysteresis branches emerges below 20~K. With magnetic force microscopy (MFM) images and numerical simulations, we attribute the dual topological Hall effect to the Néel-type skyrmions stabilized by the interactions between topological surface states and magnetism, and the sign reversal in different hysteresis branches indicates potential coexistence of skyrmions and antiskyrmions. Our work uncovers a unique two-dimensional (2D) magnetism on the surface of intrinsic AFM TI, providing a promising platform for novel topological quantum states and AFM spintronic applications.
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Submitted 27 November, 2023;
originally announced November 2023.
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Stable ion-tunable antiambipolarity in mixed ion-electron conducting polymers enables biorealistic artificial neurons
Authors:
Padinhare Cholakkal Harikesh,
Chi-Yuan Yang,
Han-Yan Wu,
Silan Zhang,
Jun-Da Huang,
Magnus Berggren,
Deyu Tu,
Simone Fabiano
Abstract:
Bio-integrated neuromorphic systems promise for new protocols to record and regulate the signaling of biological systems. Making such artificial neural circuits successful requires minimal circuit complexity and ion-based operating mechanisms similar to that of biology. However, simple leaky integrate-and-fire model neurons, commonly realized in either silicon or organic semiconductor neuromorphic…
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Bio-integrated neuromorphic systems promise for new protocols to record and regulate the signaling of biological systems. Making such artificial neural circuits successful requires minimal circuit complexity and ion-based operating mechanisms similar to that of biology. However, simple leaky integrate-and-fire model neurons, commonly realized in either silicon or organic semiconductor neuromorphic systems, can emulate only a few neural features. More functional neuron models, based on traditional complex Si-based complementary-metal-oxide-semiconductor (CMOS) or negative differential resistance (NDR) device circuits, are complicated to fabricate, not biocompatible, and lack ion- and chemical-based modulation features. Here we report a biorealistic conductance-based organic electrochemical neuron (c-OECN) using a mixed ion-electron conducting ladder-type polymer with reliable ion-tunable antiambipolarity. The latter is used to emulate the activation/inactivation of Na channels and delayed activation of K channels of biological neurons. These c-OECNs can then spike at bioplausible frequencies nearing 100 Hz, emulate most critical biological neural features, demonstrate stochastic spiking, and enable neurotransmitter and Ca2+-based spiking modulation. These combined features are impossible to achieve using previous technologies.
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Submitted 19 October, 2022;
originally announced October 2022.
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Fully 3D-Printed Organic Electrochemical Transistors
Authors:
Matteo Massetti,
Silan Zhang,
Harikesh Padinare,
Bernhard Burtscher,
Chiara Diacci,
Daniel T. Simon,
Xianjie Liu,
Mats Fahlman,
Deyu Tu,
Magnus Berggren,
Simone Fabiano
Abstract:
Organic electrochemical transistors (OECTs) are currently being investigated for various applications, ranging from sensors to logics and neuromorphic hardware. The fabrication process must be compatible with flexible and scalable digital techniques to address this wide spectrum of applications. Here, we report a direct-write additive process to fabricate fully 3D printed OECTs. We developed 3D pr…
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Organic electrochemical transistors (OECTs) are currently being investigated for various applications, ranging from sensors to logics and neuromorphic hardware. The fabrication process must be compatible with flexible and scalable digital techniques to address this wide spectrum of applications. Here, we report a direct-write additive process to fabricate fully 3D printed OECTs. We developed 3D printable conducting, semiconducting, insulating, and electrolyte inks to achieve this. The 3D-printed OECTs, operating in the depletion mode, can be fabricated on thin and flexible substrates, yielding high mechanical and environmental stability. We also developed a 3D printable nanocellulose formulation for the OECT substrate, demonstrating one of the first examples of fully 3D printed electronic devices. Good dopamine biosensing capabilities (limit of detection down to 6 uM without metal gate electrodes) and long-term (~1 hour) synapses response underscore that the present OECT manufacturing strategy is suitable for diverse applications requiring rapid design change and digitally enabled direct-write techniques.
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Submitted 14 September, 2022;
originally announced September 2022.
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In-plane anomalous Hall effect in PT-symmetric antiferromagnetic materials
Authors:
Jin Cao,
Wei Jiang,
Xiao-Ping Li,
Daifeng Tu,
Jiadong Zhou,
Jianhui Zhou,
Yugui Yao
Abstract:
Anomalous Hall effect (AHE), a protocol of various low-power dissipation quantum phenomena and a fundamental precursor of intriguing topological phases of matter, is usually observed in ferromagnetic materials with orthogonal configuration between the electric field, magnetization and the Hall current. Here, based on the symmetry analysis, we find an unconventional AHE induced by the in-plane magn…
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Anomalous Hall effect (AHE), a protocol of various low-power dissipation quantum phenomena and a fundamental precursor of intriguing topological phases of matter, is usually observed in ferromagnetic materials with orthogonal configuration between the electric field, magnetization and the Hall current. Here, based on the symmetry analysis, we find an unconventional AHE induced by the in-plane magnetic field (IPAHE) via spin-canting effect in $\mathcal{PT}$ symmetric antiferromagnetic (AFM) systems, featuring a linear dependence of magnetic field and 2$π$ angle periodicity with a comparable magnitude as conventional AHE. We demonstrate the key findings in the known AFM Dirac semimetal CuMnAs and a new kind of AFM heterodimensional VS$_2$-VS superlattice with a nodal-line Fermi surface and also briefly discuss the experimental detection. Our work provides an efficient pathway to search and/or design realistic materials for novel IPAHE that could greatly facilitate their application in AFM spintronic devices.
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Submitted 30 August, 2022;
originally announced August 2022.
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Low-power/high-gain flexible complementary circuits based on printed organic electrochemical transistors
Authors:
Chi-Yuan Yang,
Deyu Tu,
Tero-Petri Ruoko,
Jennifer Y. Gerasimov,
Han-Yan Wu,
P. C. Harikesh,
Renee Kroon,
Christian Müller,
Magnus Berggren,
Simone Fabiano
Abstract:
The ability to accurately extract low-amplitude voltage signals is crucial in several fields, ranging from single-use diagnostics and medical technology to robotics and the Internet of Things. The organic electrochemical transistor, which features large transconductance values at low operation voltages, is ideal for monitoring small signals. Its large transconductance translates small gate voltage…
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The ability to accurately extract low-amplitude voltage signals is crucial in several fields, ranging from single-use diagnostics and medical technology to robotics and the Internet of Things. The organic electrochemical transistor, which features large transconductance values at low operation voltages, is ideal for monitoring small signals. Its large transconductance translates small gate voltage variations into significant changes in the drain current. However, a current-to-voltage conversion is further needed to allow proper data acquisition and signal processing. Low power consumption, high amplification, and manufacturability on flexible and low-cost carriers are also crucial and highly anticipated for targeted applications. Here, we report low-power and high-gain flexible circuits based on printed complementary organic electrochemical transistors (OECTs). We leverage the low threshold voltage of both p-type and n-type enhancement-mode OECTs to develop complementary voltage amplifiers that can sense voltages as low as 100 $μ$V, with gains of 30.4 dB and at a power consumption < 2.7 $μ$W (single-stage amplifier). At the optimal operating conditions, the voltage gain normalized to power consumption reaches 169 dB/$μ$W, which is > 50 times larger than state-of-the-art OECT-based amplifiers. In a two-stage configuration, the complementary voltage amplifiers reach a DC voltage gain of 193 V/V, which is the highest among emerging CMOS-like technologies operating at supply voltages below 1 volt. Our findings demonstrate that flexible complementary circuits based on printed OECTs define a power-efficient platform for sensing and amplifying low-amplitude voltage signals in several emerging beyond-silicon applications.
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Submitted 14 June, 2021;
originally announced June 2021.
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The improved Gaussian approximation Calculation of Bogoliubov Mode in One Dimensional Bosonic Gas
Authors:
Qiong Li,
Daoguang Tu,
Dingping Li
Abstract:
In this paper, we study the homogeneous one-dimensional bosonic gas interacting via a repulsive contact potential by using the improved Gaussian approximation. We obtain the gapless excitation spectrum of Bogoliubov mode. Our result is in good agreement with the exact numerical calculation based on the Bethe ansatz. We speculate that the improved Gaussian approximation could be a quantitatively go…
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In this paper, we study the homogeneous one-dimensional bosonic gas interacting via a repulsive contact potential by using the improved Gaussian approximation. We obtain the gapless excitation spectrum of Bogoliubov mode. Our result is in good agreement with the exact numerical calculation based on the Bethe ansatz. We speculate that the improved Gaussian approximation could be a quantitatively good approximation for higher dimensional systems.
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Submitted 23 February, 2012;
originally announced February 2012.