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Enhanced Screening in Epitaxial Graphene via Nearly Free-Electron Metal Intercalation
Authors:
Cedric Schmitt,
Lukas Gehrig,
Jonas Erhardt,
Kilian Strauß,
Stefan Enzner,
Martin Kamp,
Timur Kim,
Giorgio Sangiovanni,
Jörg Schäfer,
Simon Moser,
Ralph Claessen
Abstract:
Graphene exhibits extraordinarily high carrier mobility, making it a promising platform for next-generation electronics. Scalable growth on SiC, however, suffers from limited dielectric screening at the graphene-substrate interface, degrading electronic performance. In this work, we systematically enhance dielectric screening by intercalating a bilayer of indium at the graphene-SiC interface. Usin…
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Graphene exhibits extraordinarily high carrier mobility, making it a promising platform for next-generation electronics. Scalable growth on SiC, however, suffers from limited dielectric screening at the graphene-substrate interface, degrading electronic performance. In this work, we systematically enhance dielectric screening by intercalating a bilayer of indium at the graphene-SiC interface. Using graphene's plasmaronic signature observed in angle-resolved photoemission spectroscopy as a proxy for interaction strength, we quantitatively demonstrate strong dielectric screening arising from the interplay of both indium layers. Layer-resolved density functional theory shows that the first indium layer acts as a buffer that absorbs substrate interactions, enabling the second layer to form a nearly free-electron system that efficiently screens the graphene layer above. Experiments with only a single intercalated indium layer reveal reduced screening, confirming the essential role of the second layer. Our results establish 2ML indium intercalation as a powerful route for engineering dielectric environments in graphene.
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Submitted 11 August, 2026;
originally announced August 2026.
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Resonantly-enhanced Raman response in graphene-capped bismuthene on SiC
Authors:
Lukas Gehrig,
Cedric Schmitt,
Erica Fragomeni,
Simone Sotgiu,
Stefan Enzner,
Tommaso Venanzi,
Bing Liu,
Kilian Strauß,
Jonas Erhardt,
Martin Kamp,
Elena Stellino,
Paolo Postorino,
Jörg Schäfer,
Simon Moser,
Christoph Stampfer,
Giorgio Sangiovanni,
Ralph Claessen,
Leonetta Baldassarre
Abstract:
Two-dimensional quantum spin Hall insulators based on atomic monolayers offer a promising route toward dissipationless electronics, yet their practical use is often limited by environmental instability. Encapsulating the system with a graphene capping layer has been shown to be a reliable method to prevent oxidation and degradation. However, the confirmation of a successful encapsulation still rel…
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Two-dimensional quantum spin Hall insulators based on atomic monolayers offer a promising route toward dissipationless electronics, yet their practical use is often limited by environmental instability. Encapsulating the system with a graphene capping layer has been shown to be a reliable method to prevent oxidation and degradation. However, the confirmation of a successful encapsulation still relies on ultra-high vacuum techniques, that considerably slow the process. Here, we present an ex situ, rapid, nondestructive and spatially resolved Raman characterization of graphene-capped bismuthene, a honeycomb monolayer of Bi on SiC. A pronounced Raman scattering peak at around 122 cm-1 is identified as the E2g phonon of bismuthene, via a comparison with density functional perturbation theory calculations. We use excitation-energy and polarization-dependent Raman measurements to enable an unambiguous assignment of the spectral features. Tuning the excitation energy close to the excitonic transition in pristine bismuthene, we observe a strong enhancement of the Raman response and the emergence of additional scattering peaks. In this regime, higher-order phonon features, as well as interfacial modes between bismuthene and the SiC substrate, become visible, suggesting the involvement of resonant scattering processes. Our results establish Raman micro-spectroscopy as a versatile tool for probing graphene-protected quantum materials, providing access to lattice dynamics and interlayer coupling.
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Submitted 3 August, 2026;
originally announced August 2026.
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Electrostatic Control Enables Robust Helical Edge Channel Transport in III-V Quantum Spin Hall Insulators
Authors:
Manuel Meyer,
Tobias Fähndrich,
Sebastian Schmid,
Justus Walter,
Martin Kamp,
Adriana Wolf,
Sergey Krishtopenko,
Guillaume Sigu,
Jean-Baptiste Rodriguez,
Eric Tournie,
Gerald Bastard,
Frederic Teppe,
Fabian Hartmann,
Sven Höfling,
Benoit Jouault
Abstract:
Quantum spin Hall transport in InAs/GaInSb-based two-dimensional topological insulators can be limited by parasitic bulk and edge contributions. We demonstrate that these limitations are effectively mitigated through electrostatic control in dual-gated InAs/GaInSb/InAs trilayer quantum wells grown on AlSb quasi-substrates. In macroscopic Hall bars exceeding the phase coherence length, a multi-prob…
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Quantum spin Hall transport in InAs/GaInSb-based two-dimensional topological insulators can be limited by parasitic bulk and edge contributions. We demonstrate that these limitations are effectively mitigated through electrostatic control in dual-gated InAs/GaInSb/InAs trilayer quantum wells grown on AlSb quasi-substrates. In macroscopic Hall bars exceeding the phase coherence length, a multi-probe analysis reveals an insulating bulk and a constant edge resistance over a wide electric-field range. In microscopic devices with edge lengths below the phase coherence lengths, the edge resistance remains robust and quantized accross a broad field range, revealing the intrinsic resilience of helical edge channels to electric-field perturbations. Only beyond a threshold value, parasitic edge contributions emerge. These results establish dual gating as a reliable strategy to suppress parasitic conduction while stabilizing helical edge transport, providing a versatile and reproducible platform for tunable topological transport in III-V quantum spin Hall systems.
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Submitted 21 July, 2026;
originally announced July 2026.
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Unconventional incommensurate epitaxy of superconducting FeSe films on SrTiO$_3$
Authors:
M. Klement,
K. M. Fijalkowski,
M. Kamp,
C. Gould,
L. W. Molenkamp
Abstract:
We present a combined X-ray diffraction and transmission electron microscopy study of superconducting FeSe/FeTe multilayers grown by molecular beam epitaxy on SrTiO$_3$(001) substrates. While X-ray diffraction confirms perfect in-plane epitaxial alignment between FeSe, FeTe, and the substrate, scanning transmission electron microscopy reveals a surprising lack of atomic registry at the FeSe/SrTiO…
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We present a combined X-ray diffraction and transmission electron microscopy study of superconducting FeSe/FeTe multilayers grown by molecular beam epitaxy on SrTiO$_3$(001) substrates. While X-ray diffraction confirms perfect in-plane epitaxial alignment between FeSe, FeTe, and the substrate, scanning transmission electron microscopy reveals a surprising lack of atomic registry at the FeSe/SrTiO$_3$ interface. Instead of adapting to the substrate lattice, FeSe retains its own in-plane lattice spacing. A periodic lateral shift between the atomic positions of FeSe and SrTiO$_3$ is observed, with a registry recurrence length that matches the lattice mismatch determined by X-ray diffraction. No misfit dislocations or other relaxation features are detected at the interface. This coexistence of directional alignment and registry-free growth suggests an unconventional regime of epitaxy in which crystallographic orientation is maintained without atomic matching. The findings offer insight into strain accommodation in layered systems and may have implications for interface engineering in Fe-based superconductors.
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Submitted 8 June, 2026;
originally announced June 2026.
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Electrically tunable orbital coupling and quantum light emission from O-band quantum dot molecules
Authors:
P. S. Avdienko,
L. Hanschke,
Q. Buchinger,
N. Akhlaq,
I. Lubianskii,
E. Weber,
H. Riedl,
M. Kamp,
T. Huber-Loyola,
S. Hoefling,
A. Pfenning,
K. Mueller,
J. J. Finley
Abstract:
We present the observation of electrically tunable quantum coupling of orbital states in individual InAs/InGaAs quantum dot molecules emitting in the telecom O-band (~1300 nm). By tuning the static electric field along the growth axis of the QD-molecule, we observe pronounced anticrossings between excitonic transitions and determine the dependence of the interdot electron tunnel coupling on the in…
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We present the observation of electrically tunable quantum coupling of orbital states in individual InAs/InGaAs quantum dot molecules emitting in the telecom O-band (~1300 nm). By tuning the static electric field along the growth axis of the QD-molecule, we observe pronounced anticrossings between excitonic transitions and determine the dependence of the interdot electron tunnel coupling on the interdot separation. As the electric field applied along the growth axis of the QD-molecules increases, positively charged exciton complexes sequentially emerge in the time-integrated emission spectra due to electron escape from the system while holes remain trapped. Moreover, for strong pumping, biexciton emission from the O-band molecules is identified. We demonstrate single-photon emission from the InAs/InGaAs QD-molecule emitting around 1300 nm with a g(2)(0) = 0.017(2) and explore the impact of tuning orbital coupling on the second-order correlation function.
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Submitted 30 March, 2026;
originally announced March 2026.
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Momentum-space non-Hermitian skin effect in an exciton-polariton system
Authors:
Yow-Ming,
Hu,
Mateusz Król,
Daria A. Smirnova,
Lev A. Smirnov,
Bianca Rae Fabricante,
Karol Winkler,
Martin Kamp,
Christian Schneider,
Sven Höfling,
Timothy C. H. Liew,
Andrew G. Truscott,
Elena A. Ostrovskaya,
Eliezer Estrecho
Abstract:
Localization of a macroscopic number of eigenstates on a real-space boundary, known as the non-Hermitian skin effect, is one of the striking topological features emerging from non-Hermiticity. Realizing this effect typically requires periodic (lattice) systems with asymmetry of intersite coupling, which is not readily available in many physical platforms. Instead, it is meticulously engineered, e.…
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Localization of a macroscopic number of eigenstates on a real-space boundary, known as the non-Hermitian skin effect, is one of the striking topological features emerging from non-Hermiticity. Realizing this effect typically requires periodic (lattice) systems with asymmetry of intersite coupling, which is not readily available in many physical platforms. Instead, it is meticulously engineered, e.g., in photonics, which results in complex structures requiring precise fabrication steps. Here, we propose a simpler mechanism: introducing an asymmetric, purely imaginary potential in a topologically trivial system induces momentum-space localization akin to the skin effect. We experimentally demonstrate this localization using exciton polaritons, hybrid light-matter quasi-particles in a simple engineered `round box' trap, pumped by a laser pump offset from the trap center. The effect disappears if the pump is concentric with the trap. The localization persists and becomes stronger at higher densities of polaritons, when a non-equilibrium Bose-Einstein condensate is formed and the system becomes nonlinear. Our approach offers a new route to realizing skin effects in continuous, non-periodic systems and exploring the interplay of non-Hermiticity, topology, and nonlinearity in macroscopic quantum states.
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Submitted 10 December, 2025;
originally announced December 2025.
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Competing excitonic couplings as origin of mimicked phase transitions in zinc-phthalocyanine single crystals
Authors:
Lisa Schraut-May,
Sebastian Hammer,
Luca Nils Philipp,
Krzysztof Radacki,
Gabriele Tauscher,
Helena Hollstein,
Kilian Strauß,
Martin Kamp,
Heinrich Schwoerer,
Holger Braunschweig,
Roland Mitric,
Jens Pflaum
Abstract:
The optical properties of molecular crystals are largely determined by the excitonic coupling of neighboring molecules. This coupling is extremely sensitive to the arrangement of adjacent molecular units, as their electronic interaction is defined by the relative orientation of the individual transition dipole moments and their wave function overlap. Hence, the optical properties, such as fluoresc…
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The optical properties of molecular crystals are largely determined by the excitonic coupling of neighboring molecules. This coupling is extremely sensitive to the arrangement of adjacent molecular units, as their electronic interaction is defined by the relative orientation of the individual transition dipole moments and their wave function overlap. Hence, the optical properties, such as fluorescence, are usually highly anisotropic and good indicators of structural changes during the variation of intensive thermodynamic parameters like temperature or pressure. Here, we discuss the peculiar though archetypical case of $β$-phase zinc-phthalocyanine: In single crystals, we report a sudden change of spectral emission with temperature from a broad, unpolarized Frenkel-exciton type luminescence to a narrow, highly polarized superradiance-like fluorescence below 80 K. Surprisingly, we find that there is no sign of a discrete structural phase transition in this temperature regime. To understand this apparent contradiction, we perform polarization-, temperature- and time-dependent photoluminescence measurements along different crystallographic directions to fully map the emission characteristics of the crystal-exciton. By means of ab-initio calculations on a density functional theory level we conclude that our observations are consistent with a dimer exciton model when considering thermalized electronic states. As such, our study presents a representative case study on a well-established molecular material class demonstrating that caution is advised when attributing discrete changes in electronic observables to a structural phase transition. As we show for zinc-phthalocyanine in its $β$-phase modification, slowly varying excitonic couplings and thermal redistribution of excitations can mimic the same signatures attributed to a structural phase transition.
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Submitted 2 December, 2025;
originally announced December 2025.
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Probing Local Topology in a Disordered Higher-Order Topological Insulator
Authors:
Johannes Düreth,
Simon Widmann,
Philipp Gagel,
Siddhartha Dam,
Simon Betzold,
Monika Emmerling,
Christian G. Mayer,
David Laibacher,
Martin Kamp,
Oleg A. Egorov,
Ulf Peschel,
Tobias Hofmann,
Ronny Thomale,
Alexander Cerjan,
Sven Höfling,
Sebastian Klembt
Abstract:
Higher-order topology is prized for its ability to realize lower-dimensional boundary states which are stable beyond fine-tuning. However, disorder presents a failure mechanism that can destroy topological in-gap states. Here, we investigate a disordered two-dimensional polariton lattice and employ the spectral localizer framework to define a real-space topological index rooted in crystalline spat…
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Higher-order topology is prized for its ability to realize lower-dimensional boundary states which are stable beyond fine-tuning. However, disorder presents a failure mechanism that can destroy topological in-gap states. Here, we investigate a disordered two-dimensional polariton lattice and employ the spectral localizer framework to define a real-space topological index rooted in crystalline spatial symmetries. This framework enables direct real-space mapping of topology beyond conventional momentum-space classifications, confirming the presence of corner and edge modes in this generalized Su-Schrieffer-Heeger model. Furthermore, it can directly quantify topological protection of a state. We leverage the versatility of our platform to experimentally realize normally distributed, random disorder and find that the corner states persist until the spectral gap closes. Experimentally, this corresponds to a disorder strength of approximately one quarter of the spectral gap. The spectral localizer accurately identifies the disorder strength at which the bandgap closes, establishing the framework as a predictive tool for every finite size system. Our results broaden the design principles for higher-order topological insulators and open the way towards imple menting disorder-resilient devices for robust lasing, light-routing, and quantum computation.
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Submitted 17 November, 2025;
originally announced November 2025.
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Quantum spin Hall effect in III-V semiconductors at elevated temperatures: advancing topological electronics
Authors:
Manuel Meyer,
Jonas Baumbach,
Sergey Krishtopenko,
Adriana Wolf,
Monika Emmerling,
Sebastian Schmid,
Martin Kamp,
Benoit Jouault,
Jean-Baptiste Rodriguez,
Eric Tournie,
Tobias Müller,
Ronny Thomale,
Gerald Bastard,
Frederic Teppe,
Fabian Hartmann,
Sven Höfling
Abstract:
The quantum spin Hall effect (QSHE), a hallmark of topological insulators, enables dissipationless, spin-polarized edge transport and has been predicted in various two-dimensional materials. However, challenges such as limited scalability, low-temperature operation, and the lack of robust electronic transport have hindered practical implementations. Here, we demonstrate the QSHE in an InAs/GaInSb/…
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The quantum spin Hall effect (QSHE), a hallmark of topological insulators, enables dissipationless, spin-polarized edge transport and has been predicted in various two-dimensional materials. However, challenges such as limited scalability, low-temperature operation, and the lack of robust electronic transport have hindered practical implementations. Here, we demonstrate the QSHE in an InAs/GaInSb/InAs trilayer quantum well structure operating at elevated temperatures. This platform meets key criteria for device integration, including scalability, reproducibility, and tunability via electric field. When the Fermi level is positioned within the energy gap, we observe quantized resistance values independent of device length and in both local and nonlocal measurement configurations, confirming the QSHE. Helical edge transport remains stable up to T = 60 K, with further potential for higher-temperature operation. Our findings establish the InAs/GaInSb system as a promising candidate for integration into next-generation devices harnessing topological functionalities, advancing the development of topological electronics.
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Submitted 26 September, 2025;
originally announced September 2025.
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Oxide Interface-Based Polymorphic Electronic Devices for Neuromorphic Computing
Authors:
Soumen Pradhan,
Kirill Miller,
Fabian Hartmann,
Merit Spring,
Judith Gabel,
Berengar Leikert,
Silke Kuhn,
Martin Kamp,
Victor Lopez-Richard,
Michael Sing,
Ralph Claessen,
Sven Höfling
Abstract:
Aside from recent advances in artificial intelligence (AI) models, specialized AI hardware is crucial to address large volumes of unstructured and dynamic data. Hardware-based AI, built on conventional complementary metal-oxidesemiconductor (CMOS)-technology, faces several critical challenges including scaling limitation of devices [1, 2], separation of computation and memory units [3] and most im…
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Aside from recent advances in artificial intelligence (AI) models, specialized AI hardware is crucial to address large volumes of unstructured and dynamic data. Hardware-based AI, built on conventional complementary metal-oxidesemiconductor (CMOS)-technology, faces several critical challenges including scaling limitation of devices [1, 2], separation of computation and memory units [3] and most importantly, overall system energy efficiency [4]. While numerous materials with emergent functionalities have been proposed to overcome these limitations, scalability, reproducibility, and compatibility remain critical obstacles [5, 6]. Here, we demonstrate oxide-interface based polymorphic electronic devices with programmable transistor, memristor, and memcapacitor functionalities by manipulating the quasi-two-dimensional electron gas in LaAlO3/SrTiO3 heterostructures [7, 8] using lateral gates. A circuit utilizing two polymorphic functionalities of transistor and memcapacitor exhibits nonlinearity and short-term memory, enabling implementation in physical reservoir computing. An integrated circuit incorporating transistor and memristor functionalities is utilized for the transition from short- to long-term synaptic plasticity and for logic operations, along with in-situ logic output storage. The same circuit with advanced reconfigurable synaptic logic operations presents high-level multi-input decision-making tasks, such as patient-monitoring in healthcare applications. Our findings pave the way for oxide-based monolithic integrated circuits in a scalable, silicon compatible, energy efficient single platform, advancing both the polymorphic and neuromorphic computings.
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Submitted 6 August, 2025; v1 submitted 5 August, 2025;
originally announced August 2025.
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Inducing ferromagnetism by structural engineering in a strongly spin-orbit coupled oxide
Authors:
Ji Soo Lim,
Carmine Autieri,
Merit Spring,
Martin Kamp,
Amar Fakhredine,
Pavel Potapov,
Daniel Wolf,
Sergii Pylypenko,
Axel Lubk,
Johannes Schultz,
Nicolas Perez,
Börge Mehlhorn,
Louis Veyrat,
Mario Cuoco,
Fadi Choueikan,
Philippe Ohresser,
Bernd Büchner,
Giorgio Sangiovanni,
Ralph Claessen,
Michael Sing
Abstract:
Magnetic materials with strong spin-orbit coupling (SOC) are essential for the advancement of spin-orbitronic devices, as they enable efficient spin-charge conversion, complex magnetic structures, spin-valley physics, topological phases and other exotic phenomena. 5d transition-metal oxides such as SrIrO3 feature large SOC, but usually show paramagnetic behavior due to broad bands and a low densit…
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Magnetic materials with strong spin-orbit coupling (SOC) are essential for the advancement of spin-orbitronic devices, as they enable efficient spin-charge conversion, complex magnetic structures, spin-valley physics, topological phases and other exotic phenomena. 5d transition-metal oxides such as SrIrO3 feature large SOC, but usually show paramagnetic behavior due to broad bands and a low density of states at the Fermi level, accompanied by a relatively low Coulomb repulsion. Here, we unveil ferromagnetism in 5d SrIrO3 thin films grown on SrTiO3 (111). Through substrate-induced structural engineering, a zigzag stacking of three-unit-cell thick layers along the [111] direction is achieved, stabilizing a ferromagnetic state at the interfaces. Magnetotransport measurements reveal an anomalous Hall effect below ~30 K and hysteresis in the Hall conductivity below 7 K, indicating ferromagnetic ordering. X-ray magnetic circular dichroism further supports these results. Theoretical analysis suggests that the structural engineering of the IrO6 octahedral network enhances the density of states at the Fermi level and thus stabilizes Stoner ferromagnetism. This work highlights the potential of structurally engineered 5d oxides for spin-orbitronic devices, where efficient control of SOC-induced magnetic phases by electric currents can lead to lower energy consumption and improved performance in next-generation device technologies.
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Submitted 30 July, 2025;
originally announced July 2025.
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Observation of Kardar-Parisi-Zhang universal scaling in two dimensions
Authors:
Simon Widmann,
Siddhartha Dam,
Johannes Düreth,
Christian G. Mayer,
Romain Daviet,
Carl Philipp Zelle,
David Laibacher,
Monika Emmerling,
Martin Kamp,
Sebastian Diehl,
Simon Betzold,
Sebastian Klembt,
Sven Höfling
Abstract:
Equilibrium and nonequilibrium states of matter can exhibit fundamentally different behavior. A key example is the Kardar-Parisi-Zhang universality class in two spatial dimensions (2D KPZ), where microscopic deviations from equilibrium give rise to macroscopic scaling laws without equilibrium counterparts. While extensively studied theoretically, direct experimental evidence of 2D KPZ scaling has…
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Equilibrium and nonequilibrium states of matter can exhibit fundamentally different behavior. A key example is the Kardar-Parisi-Zhang universality class in two spatial dimensions (2D KPZ), where microscopic deviations from equilibrium give rise to macroscopic scaling laws without equilibrium counterparts. While extensively studied theoretically, direct experimental evidence of 2D KPZ scaling has remained limited to interface growth so far. Here, we report the observation of universal scaling consistent with the KPZ universality class in 2D exciton-polariton condensates -- quantum fluids of light that are inherently driven and dissipative, thus breaking equilibrium conditions. Using momentum-resolved photoluminescence spectroscopy as well as space- and time-resolved interferometry, we probe the phase correlations across microscopically different systems, varying drive conditions in two distinct lattice geometries. Our analysis reveals correlation dynamics and scaling exponents in excellent agreement with 2D KPZ predictions. These results establish exciton-polariton condensates as a robust experimental platform for exploring 2D nonequilibrium universality quantitatively, and open new avenues for investigating the emergence of coherence in interacting quantum systems far from equilibrium.
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Submitted 18 June, 2025;
originally announced June 2025.
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Hybrid confinement techniques for polariton simulators
Authors:
Johannes Düreth,
Philipp Gagel,
David Laibacher,
Oleg A. Egorov,
Simon Widmann,
Simon Betzold,
Monika Emmerling,
Siddhartha Dam,
Alexia Landry,
Christian G. Mayer,
Martin Kamp,
Aniela Woyciechowska,
Barbara Piętka,
Ulf Peschel,
Sven Höfling,
Sebastian Klembt
Abstract:
Exciton-polariton III-V semiconductor microcavities provide a robust platform for emulating complex Hamiltonians, enabling topological photonics and quantum simulation for advanced photonic functionalities. Here, we introduce two novel fabrication techniques - etch-and-oversputter and deposit-and-oversputter - that overcome limitations of traditional photonic confinement. Both use structured, loca…
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Exciton-polariton III-V semiconductor microcavities provide a robust platform for emulating complex Hamiltonians, enabling topological photonics and quantum simulation for advanced photonic functionalities. Here, we introduce two novel fabrication techniques - etch-and-oversputter and deposit-and-oversputter - that overcome limitations of traditional photonic confinement. Both use structured, locally elongated semiconductor cavities to create deep, highly controllable potentials, while leveraging high-quality GaAs-based materials, which achieve excellent Q-factors. A sputtered all-dielectric top mirror introduces an innovative hybrid approach, simplifying fabrication while maintaining quality compared to deep ion etching. Utilizing a Kagome lattice as a benchmark, we show high-quality optical band structures previously inaccessible with deep etching. Furthermore, we study a two-dimensional breathing Kagome lattice and demonstrate polariton lasing from a zero-dimensional corner mode, confirming precise control over couplings and tight polariton localization. These methods enable fabrication of intricate lattices, including higher-order topological insulators, or on-chip quantum regimes utilizing the polariton blockade mechanism due to tight photonic confinement.
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Submitted 3 December, 2025; v1 submitted 4 March, 2025;
originally announced March 2025.
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Graphene intercalation of the large gap quantum spin Hall insulator bismuthene
Authors:
Lukas Gehrig,
Cedric Schmitt,
Jonas Erhardt,
Bing Liu,
Tim Wagner,
Martin Kamp,
Simon Moser,
Ralph Claessen
Abstract:
The quantum spin Hall insulator bismuthene, a two-third monolayer of bismuth on SiC(0001), is distinguished by helical metallic edge states that are protected by a groundbreaking 800 meV topological gap, making it ideal for room temperature applications. This massive gap inversion arises from a unique synergy between flat honeycomb structure, strong spin orbit coupling, and an orbital filtering ef…
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The quantum spin Hall insulator bismuthene, a two-third monolayer of bismuth on SiC(0001), is distinguished by helical metallic edge states that are protected by a groundbreaking 800 meV topological gap, making it ideal for room temperature applications. This massive gap inversion arises from a unique synergy between flat honeycomb structure, strong spin orbit coupling, and an orbital filtering effect that is mediated by the substrate. However, the rapid oxidation of bismuthene in air has severely hindered the development of applications, so far confining experiments to ultra-high vacuum conditions. Here, we successfully overcome this barrier, intercalating bismuthene between SiC and a protective sheet of graphene. As we demonstrate through scanning tunneling microscopy and photoemission spectroscopy, graphene intercalation preserves the structural and topological integrity of bismuthene, while effectively shielding it from oxidation in air. We identify hydrogen as the critical component that was missing in previous bismuth intercalation attempts. Our findings facilitate ex-situ experiments and pave the way for the development of bismuthene based devices, signaling a significant step forward in the development of next-generation technologies.
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Submitted 3 February, 2025;
originally announced February 2025.
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Two-Photon Interference from an InAs Quantum Dot emitting in the Telecom C-Band
Authors:
Jaewon Kim,
Jochen Kaupp,
Yorick Reum,
Giora Peniakov,
Johannes Michl,
Felix Kohr,
Monika Emmerling,
Martin Kamp,
Yong-Hoon Cho,
Tobias Huber-Loyola,
Sven Höfling,
Andreas T. Pfenning
Abstract:
Two-photon interference from an InAs/InAlGaAs quantum dot (QD) emitting in the telecom C-band with a raw two-photon interference visibility of $V_{HOM}=(71.9\pm0.2)$ % is demonstrated. This is achieved by a two-fold approach: an improvement of the molecular beam epitaxial growth for better QDs, and integration of the QDs into an optical circular Bragg grating resonator for a Purcell enhancement of…
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Two-photon interference from an InAs/InAlGaAs quantum dot (QD) emitting in the telecom C-band with a raw two-photon interference visibility of $V_{HOM}=(71.9\pm0.2)$ % is demonstrated. This is achieved by a two-fold approach: an improvement of the molecular beam epitaxial growth for better QDs, and integration of the QDs into an optical circular Bragg grating resonator for a Purcell enhancement of the radiative decay rate. The quantum optical properties of the fabricated device are studied by means of time-correlated single-photon counting under quasi-resonant excitation of the charged exciton line. A reduced lifetime of $T_1=(257.5\pm0.2)$ ps is found corresponding to a Purcell factor of $F_P\geqq(4.7\pm0.5)$. Pronounced anti-bunching of the second-order autocorrelation function at zero time delay $g^{(2)} (0)=(0.0307\pm0.0004)$ confirms the single-photon emission character. The two-photon interference is demonstrated with an unbalanced Mach-Zehnder interferometer in Hong-Ou-Mandel configuration. We discuss strategies how to further improve the indistinguishability, and provide a survey of the state-of-the art.
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Submitted 11 August, 2025; v1 submitted 27 January, 2025;
originally announced January 2025.
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Modal complexity as a metric for Anderson localization
Authors:
Sandip Mondal,
Kedar Khare,
Sergey E. Skipetrov,
Martin Kamp,
Sushil Mujumdar
Abstract:
We present a thorough study of the complexity of optical localized modes in two-dimensional disordered photonic crystals. Direct experimental measurements of complexity were made using an interferometric setup that allowed for extraction of phases and, hence, complex-valued wavefunctions. The comparison of experimental and theoretical results allows us to propose a metric for Anderson localization…
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We present a thorough study of the complexity of optical localized modes in two-dimensional disordered photonic crystals. Direct experimental measurements of complexity were made using an interferometric setup that allowed for extraction of phases and, hence, complex-valued wavefunctions. The comparison of experimental and theoretical results allows us to propose a metric for Anderson localization based on the average value and statistical distribution of complexity. Being an alternative to other known criteria of localization, the proposed metric exploits the openness of the disordered medium and provides a quantitative characterization of the degree of localization allowing for determining the localization length.
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Submitted 4 November, 2024;
originally announced November 2024.
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Reprogrammable sequencing for physically intelligent under-actuated robots
Authors:
Leon M. Kamp,
Mohamed Zanaty,
Ahmad Zareei,
Benjamin Gorissen,
Robert J. Wood,
Katia Bertoldi
Abstract:
Programming physical intelligence into mechanisms holds great promise for machines that can accomplish tasks such as navigation of unstructured environments while utilizing a minimal amount of computational resources and electronic components. In this study, we introduce a novel design approach for physically intelligent under-actuated mechanisms capable of autonomously adjusting their motion in r…
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Programming physical intelligence into mechanisms holds great promise for machines that can accomplish tasks such as navigation of unstructured environments while utilizing a minimal amount of computational resources and electronic components. In this study, we introduce a novel design approach for physically intelligent under-actuated mechanisms capable of autonomously adjusting their motion in response to environmental interactions. Specifically, multistability is harnessed to sequence the motion of different degrees of freedom in a programmed order. A key aspect of this approach is that these sequences can be passively reprogrammed through mechanical stimuli that arise from interactions with the environment. To showcase our approach, we construct a four degree of freedom robot capable of autonomously navigating mazes and moving away from obstacles. Remarkably, this robot operates without relying on traditional computational architectures and utilizes only a single linear actuator.
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Submitted 5 September, 2024;
originally announced September 2024.
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Epitaxial RuO$_2$ and IrO$_2$ films by pulsed laser deposition on TiO$_2$(110)
Authors:
Philipp Keßler,
Tim Waldsauer,
Vedran Jovic,
Martin Kamp,
Matthias Schmitt,
Michael Sing,
Ralph Claessen,
Simon Moser
Abstract:
We present a systematic growth study of epitaxial RuO$_2$(110) and IrO$_2$(110) on TiO$_2$(110) substrates by pulsed laser deposition. We describe the main challenges encountered in the growth process, such as a deteriorating material flux due to laser induced target metallization or the delicate balance of under- vs over-oxidation of the 'stubborn' Ru and Ir metals. We identify growth temperature…
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We present a systematic growth study of epitaxial RuO$_2$(110) and IrO$_2$(110) on TiO$_2$(110) substrates by pulsed laser deposition. We describe the main challenges encountered in the growth process, such as a deteriorating material flux due to laser induced target metallization or the delicate balance of under- vs over-oxidation of the 'stubborn' Ru and Ir metals. We identify growth temperatures and oxygen partial pressures of 700 K, $1\times 10^{-3}$ mbar for RuO$_2$ and 770 K, $5\times 10^{-4}$ mbar for IrO$_2$ to optimally balance between metal oxidation and particle mobility during nucleation. In contrast to IrO$_2$, RuO$_2$ exhibits layer-by-layer growth up to 5 unit cells if grown at high deposition rates. At low deposition rates, the large lattice mismatch between film and substrate fosters initial 3D island growth and cluster formation. In analogy to reports for RuO$_2$ based on physical vapor deposition, we find these islands to eventually merge and growth to continue in a step flow mode, resulting in highly crystalline, flat, stoichiometric films of RuO$_2$(110) (up to 30 nm thickness) and IrO$_2$(110) (up to 13 nm thickness) with well defined line defects.
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Submitted 21 May, 2024;
originally announced May 2024.
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Saturation of the anomalous Hall effect at high magnetic fields in altermagnetic RuO2
Authors:
Teresa Tschirner,
Philipp Keßler,
Ruben Dario Gonzalez Betancourt,
Tommy Kotte,
Dominik Kriegner,
Bernd Buechner,
Joseph Dufouleur,
Martin Kamp,
Vedran Jovic,
Libor Smejkal,
Jairo Sinova,
Ralph Claessen,
Tomas Jungwirth,
Simon Moser,
Helena Reichlova,
Louis Veyrat
Abstract:
Observations of the anomalous Hall effect in RuO$_2$ and MnTe have demonstrated unconventional time-reversal symmetry breaking in the electronic structure of a recently identified new class of compensated collinear magnets, dubbed altermagnets. While in MnTe the unconventional anomalous Hall signal accompanied by a vanishing magnetization is observable at remanence, the anomalous Hall effect in Ru…
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Observations of the anomalous Hall effect in RuO$_2$ and MnTe have demonstrated unconventional time-reversal symmetry breaking in the electronic structure of a recently identified new class of compensated collinear magnets, dubbed altermagnets. While in MnTe the unconventional anomalous Hall signal accompanied by a vanishing magnetization is observable at remanence, the anomalous Hall effect in RuO$_2$ is excluded by symmetry for the Néel vector pointing along the zero-field [001] easy-axis. Guided by a symmetry analysis and ab initio calculations, a field-induced reorientation of the Néel vector from the easy-axis towards the [110] hard-axis was used to demonstrate the anomalous Hall signal in this altermagnet. We confirm the existence of an anomalous Hall effect in our RuO$_2$ thin-film samples whose set of magnetic and magneto-transport characteristics is consistent with the earlier report. By performing our measurements at extreme magnetic fields up to 68 T, we reach saturation of the anomalous Hall signal at a field $H_{\rm c} \simeq$ 55 T that was inaccessible in earlier studies, but is consistent with the expected Néel-vector reorientation field.
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Submitted 1 September, 2023;
originally announced September 2023.
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Stabilizing an atomically thin quantum spin Hall insulator at ambient conditions: Graphene-intercalation of indenene
Authors:
Cedric Schmitt,
Jonas Erhardt,
Philipp Eck,
Matthias Schmitt,
Kyungchan Lee,
Tim Wagner,
Philipp Keßler,
Martin Kamp,
Timur Kim,
Cephise Cacho,
Tien-Lin Lee,
Giorgio Sangiovanni,
Simon Moser,
Ralph Claessen
Abstract:
Atomic monolayers on semiconductor surfaces represent a new class of functional quantum materials at the ultimate two-dimensional limit, ranging from superconductors [1, 2] to Mott insulators [3, 4] and ferroelectrics [5] to quantum spin Hall insulators (QSHI) [6, 7]. A case in point is the recently discovered QSHI indenene [7, 8], a triangular monolayer of indium epitaxially grown on SiC(0001), e…
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Atomic monolayers on semiconductor surfaces represent a new class of functional quantum materials at the ultimate two-dimensional limit, ranging from superconductors [1, 2] to Mott insulators [3, 4] and ferroelectrics [5] to quantum spin Hall insulators (QSHI) [6, 7]. A case in point is the recently discovered QSHI indenene [7, 8], a triangular monolayer of indium epitaxially grown on SiC(0001), exhibiting a $\sim$120meV gap and substrate-matched monodomain growth on the technologically relevant $μ$m scale [9]. Its suitability for room-temperature spintronics is countered, however, by the instability of pristine indenene in air, which destroys the system along with its topological character, nullifying hopes of ex-situ processing and device fabrication. Here we show how indenene intercalation into epitaxial graphene offers effective protection from the oxidizing environment, while it leaves the topological character fully intact. This opens an unprecedented realm of ex-situ experimental opportunities, bringing this monolayer QSHI within realistic reach of actual device fabrication and edge channel transport.
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Submitted 12 May, 2023;
originally announced May 2023.
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Temporal sorting of optical multi-wave-mixing processes in semiconductor quantum dots
Authors:
S. Grisard,
A. V. Trifonov,
H. Rose,
R. Reichhardt,
M. Reichelt,
C. Schneider,
M. Kamp,
S. Höfling,
M. Bayer,
T. Meier,
I. A. Akimov
Abstract:
Coherent control of ensembles of light emitters by means of multi-wave mixing processes is key for the realization of high capacity optical quantum memories and information processing devices. In this context, semiconductor quantum dots placed in optical microcavities represent excellent candidates to explore strong light-matter interactions beyond the limits of perturbative non-linear optics and…
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Coherent control of ensembles of light emitters by means of multi-wave mixing processes is key for the realization of high capacity optical quantum memories and information processing devices. In this context, semiconductor quantum dots placed in optical microcavities represent excellent candidates to explore strong light-matter interactions beyond the limits of perturbative non-linear optics and control the unitary evolution of optically driven quantum systems. In this work, we demonstrate that a sequence of two optical picosecond pulses can be used to establish coherent control over the phase evolution of the ensemble of trions in (In,Ga)As quantum dots independent of their initial quantum state. Our approach is based on coherent transfer between degenerate multi-wave-mixing signals in the strong field limit where Rabi rotations in multi-level systems take place. In particular, we use the two-pulse photon echo sequence to uncover the coherent dynamics of the trion ensemble, whereas the areas of two additional control pulses serve as tuning knobs for adjusting the magnitude and timing of the coherent emission. Furthermore, we make use of the spin degeneracy of ground and excited state of trions to control the polarization state of the emitted signal. Surprisingly, we reveal that the use of optical control pulses, whose durations are comparable to the dephasing time of the ensemble, lifts the temporal degeneracy between wave-mixing processes of different order. This phenomenon is manifested in a significant modification of the temporal shape of the coherent optical response for strong optical fields. Lifting the temporal degeneracy allows to smoothly trace the transition from the perturbative to the regime of Rabi rotations and opens up new possibilities for the optical investigation of complex energy level structures in so far unexplored material systems.
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Submitted 5 February, 2023;
originally announced February 2023.
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Moiré pattern formation in epitaxial growth on a covalent substrate: Sb on InSb(111)A
Authors:
Bing Liu,
Tim Wagner,
Stefan Enzner,
Philipp Eck,
Martin Kamp,
Giorgio Sangiovanni,
Ralph Claessen
Abstract:
Structural moiré superstructures arising from two competing lattices may lead to unexpected electronic behavior, such as superconductivity or Mottness. Most investigated moiré heterostructures are based on van der Waals (vdW) materials, as strong interface interactions typically lead to the formation of strained films or regular surface reconstructions. Here we successfully synthesize ultrathin Sb…
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Structural moiré superstructures arising from two competing lattices may lead to unexpected electronic behavior, such as superconductivity or Mottness. Most investigated moiré heterostructures are based on van der Waals (vdW) materials, as strong interface interactions typically lead to the formation of strained films or regular surface reconstructions. Here we successfully synthesize ultrathin Sb films, that are predicted to show thickness-dependent topological properties, on semi-insulating InSb(111)A. Despite the covalent nature of the substrate surface, we prove by scanning transmission electron microscopy (STEM) that already the first layer of Sb atoms grows completely unstrained, while azimuthally aligned. Rather than compensating the lattice mismatch of -6.4% by structural modifications, the Sb films form a pronounced moiré pattern as we evidence by scanning tunneling microscopy (STM) topography up to film thicknesses of several bilayers. Our model calculations based on density functional theory (DFT) assign the moiré pattern to a periodic surface corrugation. In agreement with DFT predictions, irrespective of the moiré modulation, the topological surface state known on thick Sb film is experimentally confirmed to persist down to low film thicknesses, and the Dirac point shifts towards lower binding energies with decreasing Sb thickness.
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Submitted 12 December, 2022;
originally announced December 2022.
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Boosting Optical Nanocavity Coupling by Retardation Matching to Dark Modes
Authors:
Rohit Chikkaraddy,
Junyang Huang,
Dean Kos,
Eoin Elliott,
Marlous Kamp,
Chenyang Guo,
Jeremy J. Baumberg,
Bart de Nijs
Abstract:
Plasmonic nano-antennas can focus light to nanometre length-scales providing intense field enhancements. For the tightest optical confinements (0.5-5 nm) achieved in plasmonic gaps, the gap spacing, refractive index, and facet width play a dominant role in determining the optical properties making tuning through antenna shape challenging. We show here that controlling the surrounding refractive in…
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Plasmonic nano-antennas can focus light to nanometre length-scales providing intense field enhancements. For the tightest optical confinements (0.5-5 nm) achieved in plasmonic gaps, the gap spacing, refractive index, and facet width play a dominant role in determining the optical properties making tuning through antenna shape challenging. We show here that controlling the surrounding refractive index instead allows both efficient frequency tuning and enhanced in/output-coupling through retardation matching as this allows dark modes to become optically active, improving widespread functionalities.
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Submitted 20 October, 2022;
originally announced October 2022.
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Linear colossal magnetoresistance driven by magnetic textures in LaTiO3 thin films on SrTiO3
Authors:
Teresa Tschirner,
Berengar Leikert,
Felix Kern,
Daniel Wolf,
Axel Lubk,
Martin Kamp,
Kirill Miller,
Fabian Hartmann,
Sven Höfling,
Bernd Büchner,
Joseph Dufouleur,
Marc Gabay,
Michael Sing,
Ralph Claessen,
Louis Veyrat
Abstract:
Linear magnetoresistance (LMR) is of particular interest for memory, electronics, and sensing applications, especially when it does not saturate over a wide range of magnetic fields. One of its principal origins is local mobility or density inhomogeneities, often structural, which in the Parish-Littlewood theory leads to an unsaturating LMR proportional to mobility. Structural disorder, however, a…
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Linear magnetoresistance (LMR) is of particular interest for memory, electronics, and sensing applications, especially when it does not saturate over a wide range of magnetic fields. One of its principal origins is local mobility or density inhomogeneities, often structural, which in the Parish-Littlewood theory leads to an unsaturating LMR proportional to mobility. Structural disorder, however, also tends to limit the mobility and hence the overall LMR amplitude. An alternative route to achieve large LMR is via non-structural inhomogeneities which do not affect the zero field mobility, like magnetic domains. Here, linear positive magnetoresistance caused by magnetic texture is reported in \ch{LaTiO3}/\ch{SrTiO3} heterostructures. The LMR amplitude reaches up to 6500\% at 9T. This colossal value is understood by the unusual combination of a very high thin film mobility, up to 40 000 cm$^2$/V.s, and a very large coverage of low-mobility regions. These regions correlate with a striped magnetic structure, compatible with a spiral magnetic texture in the \ch{LaTiO3} film, revealed by low temperature Lorentz transmission electron microscopy. These results provide a novel route for the engineering of large-LMR devices.
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Submitted 14 October, 2022;
originally announced October 2022.
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Two-dimensional ferromagnetic extension of a topological insulator
Authors:
P. Kagerer,
C. I. Fornari,
S. Buchberger,
T. Tschirner,
L. Veyrat,
M. Kamp,
A. V. Tcakaev,
V. Zabolotnyy,
S. L. Morelhão,
B. Geldiyev,
S. Müller,
A. Fedorov,
E. Rienks,
P. Gargiani,
M. Valvidares,
L. C. Folkers,
A. Isaeva,
B. Büchner,
V. Hinkov,
R. Claessen,
H. Bentmann,
F. Reinert
Abstract:
Inducing a magnetic gap at the Dirac point of the topological surface state (TSS) in a 3D topological insulator (TI) is a route to dissipationless charge and spin currents. Ideally, magnetic order is present only at the surface and not in the bulk, e.g. through proximity of a ferromagnetic (FM) layer. However, such a proximity-induced Dirac mass gap has not been observed, likely due to insufficien…
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Inducing a magnetic gap at the Dirac point of the topological surface state (TSS) in a 3D topological insulator (TI) is a route to dissipationless charge and spin currents. Ideally, magnetic order is present only at the surface and not in the bulk, e.g. through proximity of a ferromagnetic (FM) layer. However, such a proximity-induced Dirac mass gap has not been observed, likely due to insufficient overlap of TSS and the FM subsystem. Here, we take a different approach, namely FM extension, using a thin film of the 3D TI Bi$_2$Te$_3$, interfaced with a monolayer of the lattice-matched van der Waals ferromagnet MnBi$_2$Te$_4$. Robust 2D ferromagnetism with out-of-plane anisotropy and a critical temperature of $\text{T}_\text{c}\approx$~15 K is demonstrated by X-ray magnetic dichroism and electrical transport measurements. Using angle-resolved photoelectron spectroscopy, we observe the opening of a sizable magnetic gap in the 2D FM phase, while the surface remains gapless in the paramagnetic phase above T$_c$. This sizable gap indicates a relocation of the TSS to the FM ordered Mn moments near the surface, which leads to a large mutual overlap.
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Submitted 28 July, 2022;
originally announced July 2022.
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Automated Classification of Nanoparticles with Various Ultrastructures and Sizes
Authors:
Claudius Zelenka,
Marius Kamp,
Kolja Strohm,
Akram Kadoura,
Jacob Johny,
Reinhard Koch,
Lorenz Kienle
Abstract:
Accurately measuring the size, morphology, and structure of nanoparticles is very important, because they are strongly dependent on their properties for many applications. In this paper, we present a deep-learning based method for nanoparticle measurement and classification trained from a small data set of scanning transmission electron microscopy images. Our approach is comprised of two stages: l…
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Accurately measuring the size, morphology, and structure of nanoparticles is very important, because they are strongly dependent on their properties for many applications. In this paper, we present a deep-learning based method for nanoparticle measurement and classification trained from a small data set of scanning transmission electron microscopy images. Our approach is comprised of two stages: localization, i.e., detection of nanoparticles, and classification, i.e., categorization of their ultrastructure. For each stage, we optimize the segmentation and classification by analysis of the different state-of-the-art neural networks. We show how the generation of synthetic images, either using image processing or using various image generation neural networks, can be used to improve the results in both stages. Finally, the application of the algorithm to bimetallic nanoparticles demonstrates the automated data collection of size distributions including classification of complex ultrastructures. The developed method can be easily transferred to other material systems and nanoparticle structures.
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Submitted 28 July, 2022;
originally announced July 2022.
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Multiple Rabi rotations of trions in InGaAs quantum dots observed by photon echo spectroscopy with spatially shaped laser pulses
Authors:
S. Grisard,
H. Rose,
A. V. Trifonov,
R. Reichhardt,
D. E. Reiter,
M. Reichelt,
C. Schneider,
M. Kamp,
S. Höfling,
M. Bayer,
T. Meier,
I. A. Akimov
Abstract:
We study Rabi rotations arising in intensity-dependent photon echoes from an ensemble of self-assembled InGaAs quantum dots. To achieve a uniform distribution of intensities within the excited ensemble, we introduce flattop intensity profiles of picosecond laser pulses. This allows us to overcome the damping of Rabi rotations imposed by the spatial inhomogeneity of Rabi frequencies by a Gaussian l…
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We study Rabi rotations arising in intensity-dependent photon echoes from an ensemble of self-assembled InGaAs quantum dots. To achieve a uniform distribution of intensities within the excited ensemble, we introduce flattop intensity profiles of picosecond laser pulses. This allows us to overcome the damping of Rabi rotations imposed by the spatial inhomogeneity of Rabi frequencies by a Gaussian laser profile. Using photon echo polarimetry, we distinguish between the coherent optical responses from exciton and trion ensembles. Here, we demonstrate that a photo-induced charging of the quantum dots leads to a significant reduction of the number of neutral quantum dots under resonant excitation with intensive optical pulses with areas exceeding $\fracπ{2}$. The trion ensemble shows robust Rabi rotations when the area of the refocussing pulse is increased up to 5.5$π$. We analyze the remaining attenuation of Rabi rotations by theoretical modeling of excitation induced dephasing, inhomogeneity of dipole moments, and coupling to acoustic phonons. The latter is identified as the dominating mechanism resulting in a loss of optical coherence during the action of the involved optical pulses.
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Submitted 20 September, 2022; v1 submitted 16 May, 2022;
originally announced May 2022.
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Antiferromagnetic order in MnBi2Te4 films grown on Si(111) by molecular beam epitaxy
Authors:
N. Liu,
S. Schreyeck,
K. M. Fijalkowski,
M. Kamp,
K. Brunner,
C. Gould,
L. W. Molenkamp
Abstract:
MnBi2Te4 has recently been predicted and shown to be a magnetic topological insulator with intrinsic antiferromagnetic order. However, it remains a challenge to grow stoichiometric MnBi2Te4 films by molecular beam epitaxy (MBE) and to observe pure antiferromagnetic order by magnetometry. We report on a detailed study of MnBi2Te4 films grown on Si(111) by MBE with elemental sources. Films of about…
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MnBi2Te4 has recently been predicted and shown to be a magnetic topological insulator with intrinsic antiferromagnetic order. However, it remains a challenge to grow stoichiometric MnBi2Te4 films by molecular beam epitaxy (MBE) and to observe pure antiferromagnetic order by magnetometry. We report on a detailed study of MnBi2Te4 films grown on Si(111) by MBE with elemental sources. Films of about 100 nm thickness are analyzed in stoichiometric, structural, magnetic and magnetotransport properties with high accuracy. High-quality MnBi2Te4 films with nearly perfect septuple-layer structure are realized and structural defects typical for epitaxial van-der-Waals layers are analyzed. The films reveal antiferromagnetic order with a Neel temperature of 19 K, a spin-flop transition at a magnetic field of 2.5 T and a resistivity of 1.6 mOhm cm. These values are comparable to that of bulk MnBi2Te4 crystals. Our results provide an important basis for realizing and identifying single-phase MnBi2Te4 films with antiferromagnetic order grown by MBE.
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Submitted 27 November, 2021;
originally announced November 2021.
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Simulation of X-ray diffraction in Mn$_x$Bi$_2$Te$_{3+x}$ epitaxic films
Authors:
Rafaela F. S. Penacchio,
Celso I. Fornari,
Yori G. Camillo,
Philipp Kagerer,
Sebastian Buchberger,
Martin Kamp,
Hendrik Bentmann,
Friedrich Reinert,
Sergio L. Morelhao
Abstract:
Disordered heterostructures stand as a general description for compounds that are part of homologous series such as bismuth chalcogenides. In device engineering, van der Waals epitaxy of these compounds is very promising for applications in spintronic and quantum computing. Structural analysis methods are essential to control and improve their synthesis in the form of thin films. Recently, X-rays…
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Disordered heterostructures stand as a general description for compounds that are part of homologous series such as bismuth chalcogenides. In device engineering, van der Waals epitaxy of these compounds is very promising for applications in spintronic and quantum computing. Structural analysis methods are essential to control and improve their synthesis in the form of thin films. Recently, X-rays tools have been proposed for structural modeling of disordered heterostructures [arXiv:2107.12280]. Here, we further evaluate the use of these tools to study the compound Mn$_x$Bi$_2$Te$_{3+x}$ in the grazing incidence region of the reflectivity curves, as well as the effect of thickness fluctuation in the wide angle region.
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Submitted 4 September, 2021;
originally announced September 2021.
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X-ray diffraction tools for structural modeling of epitaxic films of an intrinsic antiferromagnetic topological insulator
Authors:
Rafaela F. S. Penacchio,
Celso I. Fornari,
Yori G. Camillo,
Philipp Kagerer,
Sebastian Buchberger,
Martin Kamp,
Hendrik Bentmann,
Friedrich Reinert,
Sergio L. Morelhao
Abstract:
Synthesis of new materials demands structural analysis tools suited to the particularities of each system. Van der Waals (vdW) materials are fundamental in emerging technologies of spintronics and quantum information processing, in particular topological insulators and, more recently, materials that allow the phenomenological exploration of the combination of non-trivial electronic band topology a…
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Synthesis of new materials demands structural analysis tools suited to the particularities of each system. Van der Waals (vdW) materials are fundamental in emerging technologies of spintronics and quantum information processing, in particular topological insulators and, more recently, materials that allow the phenomenological exploration of the combination of non-trivial electronic band topology and magnetism. Weak vdW forces between atomic layers give rise to composition fluctuations and structural disorder that are difficult to control even in a typical binary topological insulators such as Bi2Te3. The addition of a third element as in MnBi2Te4 makes the epitaxy of these materials even more chaotic. In this work, statistical model structures of thin films on single crystal substrates are described. It allows the simulation of X-ray diffraction in disordered heterostructures, a necessary step towards controlling the epitaxial growth of these materials. On top of this, the diffraction simulation method described here can be readily applied as a general tool in the field of design new materials based on stacking of vdW bonded layers of distint elements.
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Submitted 26 July, 2021;
originally announced July 2021.
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Hard X-ray photoemission spectroscopy of LaVO$_3$/SrTiO$_3$: Band alignment and electronic reconstruction
Authors:
M. Stübinger,
J. Gabel,
P. Scheiderer,
M. Zapf,
M. Schmitt,
P. Schütz,
B. Leikert,
J. Küspert,
M. Kamp,
P. K. Thakur,
T. -L. Lee,
P. Potapov,
A. Lubk,
B. Büchner,
M. Sing,
R. Claessen
Abstract:
The heterostructure consisting of the Mott insulator LaVO$_3$ and the band insulator SrTiO$_3$ is considered a promising candidate for future photovoltaic applications. Not only does the (direct) excitation gap of LaVO$_3$ match well the solar spectrum, but its correlated nature and predicted built-in potential, owing to the non-polar/polar interface when integrated with SrTiO$_3$, also offer rema…
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The heterostructure consisting of the Mott insulator LaVO$_3$ and the band insulator SrTiO$_3$ is considered a promising candidate for future photovoltaic applications. Not only does the (direct) excitation gap of LaVO$_3$ match well the solar spectrum, but its correlated nature and predicted built-in potential, owing to the non-polar/polar interface when integrated with SrTiO$_3$, also offer remarkable advantages over conventional solar cells. However, experimental data beyond the observation of a thickness-dependent metal-insulator transition is scarce and a profound, microscopic understanding of the electronic properties is still lacking. By means of soft and hard X-ray photoemission spectroscopy as well as resistivity and Hall effect measurements we study the electrical properties, band bending, and band alignment of LaVO$_3$/SrTiO$_3$ heterostructures. We find a critical LaVO$_3$ thickness of five unit cells, confinement of the conducting electrons to exclusively Ti 3$d$ states at the interface, and a potential gradient in the film. From these findings we conclude on electronic reconstruction as the driving mechanism for the formation of the metallic interface in LaVO$_3$/SrTiO$_3$.
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Submitted 26 May, 2021;
originally announced May 2021.
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A Two-Kind-Boson Mixture Honeycomb Hamiltonian of Bloch Exciton-Polaritons
Authors:
Haining Pan,
K. Winkler,
Mats Powlowski,
Ming Xie,
A. Schade,
M. Emmerling,
M. Kamp,
S. Klemt,
C. Schneider,
Tim Byrnes,
S. Hoefling,
Na Young Kim
Abstract:
The electronic bandstructure of a solid is a collection of allowed bands separated by forbidden bands, revealing the geometric symmetry of the crystal structures. Comprehensive knowledge of the bandstructure with band parameters explains intrinsic physical, chemical and mechanical properties of the solid. Here we report the artificial polaritonic bandstructures of two-dimensional honeycomb lattice…
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The electronic bandstructure of a solid is a collection of allowed bands separated by forbidden bands, revealing the geometric symmetry of the crystal structures. Comprehensive knowledge of the bandstructure with band parameters explains intrinsic physical, chemical and mechanical properties of the solid. Here we report the artificial polaritonic bandstructures of two-dimensional honeycomb lattices for microcavity exciton-polaritons using GaAs semiconductors in the wide-range detuning values, from cavity-photon-like (red-detuned) to exciton-like (blue-detuned) regimes. In order to understand the experimental bandstructures and their band parameters, such as gap energies, bandwidths, hopping integrals and density of states, we originally establish a polariton band theory within an augmented plane wave method with two-kind-bosons, cavity photons trapped at the lattice sites and freely moving excitons. In particular, this two-kind-band theory is absolutely essential to elucidate the exciton effect in the bandstructures of blue-detuned exciton-polaritons, where the flattened exciton-like dispersion appears at larger in-plane momentum values captured in our experimental access window. We reach an excellent agreement between theory and experiments in all detuning values.
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Submitted 1 May, 2021;
originally announced May 2021.
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Multidimensional thermally-induced transformation of nest-structured complex Au-Fe nanoalloys towards equilibrium
Authors:
Jacob Johny,
Oleg Prymak,
Marius Kamp,
Florent Calvo,
Se-Ho Kim,
Anna Tymoczko,
Ayman El-Zoka,
Christoph Rehbock,
Ulrich Schürmann,
Baptiste Gault,
Lorenz Kienle,
Stephan Barcikowski
Abstract:
Bimetallic nanoparticles are often superior candidates for a wide range of technological and biomedical applications, thanks to their enhanced catalytic, optical, and magnetic properties, which are often better than their monometallic counterparts. Most of their properties strongly depend on their chemical composition, crystallographic structure, and phase distribution. However, little is known of…
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Bimetallic nanoparticles are often superior candidates for a wide range of technological and biomedical applications, thanks to their enhanced catalytic, optical, and magnetic properties, which are often better than their monometallic counterparts. Most of their properties strongly depend on their chemical composition, crystallographic structure, and phase distribution. However, little is known of how their crystal structure, on the nanoscale, transforms over time at elevated temperatures, even though this knowledge is highly relevant in case nanoparticles are used in, e.g., high-temperature catalysis. Au-Fe is a promising bimetallic system where the low-cost and magnetic Fe is combined with catalytically active and plasmonic Au. Here, we report on the in situ temporal evolution of the crystalline ordering in Au-Fe nanoparticles, obtained from a modern laser ablation in liquids synthesis. Our in-depth analysis, complemented by dedicated atomistic simulations, includes a detailed structural characterization by X-ray diffraction and transmission electron microscopy as well as atom probe tomography to reveal elemental distributions down to a single atom resolution. We show that the Au-Fe nanoparticles initially exhibit highly complex internal nested nanostructures with a wide range of compositions, phase distributions, and size-depended microstrains. The elevated temperature induces a diffusion-controlled recrystallization and phase merging, resulting in the formation of a single face-centered-cubic ultrastructure in contact with a body-centered cubic phase, which demonstrates the metastability of these structures. Uncovering these unique nanostructures with nested features could be highly attractive from a fundamental viewpoint as they could give further insights into the nanoparticle formation mechanism under non-equilibrium conditions.
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Submitted 27 April, 2021;
originally announced April 2021.
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Purcell-enhanced single photon source based on a deterministically placed WSe$_{2}$ monolayer quantum dot in a circular Bragg grating cavity
Authors:
O. Iff,
Q. Buchinger,
M. Moczała-Dusanowska,
M. Kamp,
S. Betzold,
S. Tongay,
C. Antón-Solanas,
S. Höfling,
C. Schneider
Abstract:
We demonstrate a deterministic Purcell-enhanced single-photon source realized by integrating an atomically thin WSe$_{2}$ layer with a circular Bragg grating cavity. The cavity significantly enhances the photoluminescence from the atomically thin layer, and supports single-photon generation with $g^{(2)}(0)<0.25$. We observe a consistent increase of the spontaneous emission rate for WSe$_{2}$ emit…
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We demonstrate a deterministic Purcell-enhanced single-photon source realized by integrating an atomically thin WSe$_{2}$ layer with a circular Bragg grating cavity. The cavity significantly enhances the photoluminescence from the atomically thin layer, and supports single-photon generation with $g^{(2)}(0)<0.25$. We observe a consistent increase of the spontaneous emission rate for WSe$_{2}$ emitters located in the center of the Bragg grating cavity. These WSe$_{2}$ emitters are self-aligned and deterministically coupled to such a broadband cavity, configuring a new generation of deterministic single-photon sources, characterized by their simple and low-cost production and intrinsic scalability.
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Submitted 4 February, 2021;
originally announced February 2021.
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Higgs-like pair amplitude dynamics in superconductor-quantum dot hybrids
Authors:
Mathias Kamp,
Björn Sothmann
Abstract:
We consider a quantum dot weakly tunnel coupled to superconducting reservoirs. A finite superconducting pair amplitude can be induced on the dot via the proximity effect. We investigate the dynamics of the induced pair amplitude after a quench and under periodic driving of the system by means of a real-time diagrammatic approach. We find that the quench dynamics is dominated by an exponential deca…
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We consider a quantum dot weakly tunnel coupled to superconducting reservoirs. A finite superconducting pair amplitude can be induced on the dot via the proximity effect. We investigate the dynamics of the induced pair amplitude after a quench and under periodic driving of the system by means of a real-time diagrammatic approach. We find that the quench dynamics is dominated by an exponential decay towards equilibrium In contrast, the periodically driven system can sustain coherent oscillations of both the amplitude and the phase of the induced pair amplitude in analogy to Higgs and Nambu-Goldstone modes in driven bulk superconductors.
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Submitted 17 December, 2020; v1 submitted 1 October, 2020;
originally announced October 2020.
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Molecular beam epitaxy of the half-Heusler antiferromagnet CuMnSb
Authors:
Lukas Scheffler,
Katarzyna Gas,
Sanjib Banik,
Martin Kamp,
Jonas Knobel,
Haicheng Lin,
Claus Schumacher,
Charles Gould,
Maciej Sawicki,
Johannes Kleinlein,
Laurens W. Molenkamp
Abstract:
We report growth of CuMnSb thin films by molecular beam epitaxy on InAs(001) substrates. The CuMnSb layers are compressively strained ($0.6~\text{%}$) due to lattice mismatch. The thin films have a $ω$ full width half max of $7.7^{''}$ according to high resolution X-ray diffraction, and a root mean square roughness of $0.14~\text{nm}$ as determined by atomic force microscopy. Magnetic and electric…
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We report growth of CuMnSb thin films by molecular beam epitaxy on InAs(001) substrates. The CuMnSb layers are compressively strained ($0.6~\text{%}$) due to lattice mismatch. The thin films have a $ω$ full width half max of $7.7^{''}$ according to high resolution X-ray diffraction, and a root mean square roughness of $0.14~\text{nm}$ as determined by atomic force microscopy. Magnetic and electrical properties are found to be consistent with reported values from bulk samples. We find a Néel temperature of $62~\text{K}$, a Curie-Weiss temperature of $-65~\text{K}$ and an effective moment of $5.9~μ_{\text{B}}/\text{f.u.}$. Transport measurements confirm the antiferromagetic transition and show a residual resistivity at $4~\text{K}$ of $35~μΩ\cdot \text{cm}$.
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Submitted 1 September, 2020;
originally announced September 2020.
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Four-wave mixing dynamics of a strongly coupled quantum-dot--microcavity system driven by up to 20 photons
Authors:
Daniel Groll,
Daniel Wigger,
Kevin Jürgens,
Thilo Hahn,
Christian Schneider,
Martin Kamp,
Sven Höfling,
Jacek Kasprzak,
Tilmann Kuhn
Abstract:
The Jaynes-Cummings (JC) model represents one of the simplest ways in which single qubits can interact with single photon modes, leading to profound quantum phenomena like superpositions of light and matter states. One system, that can be described with the JC model, is a single quantum dot embedded in a micropillar cavity. In this joint experimental and theoretical study we investigate such a sys…
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The Jaynes-Cummings (JC) model represents one of the simplest ways in which single qubits can interact with single photon modes, leading to profound quantum phenomena like superpositions of light and matter states. One system, that can be described with the JC model, is a single quantum dot embedded in a micropillar cavity. In this joint experimental and theoretical study we investigate such a system using four-wave mixing (FWM) micro-spectroscopy. Special emphasis is laid on the dependence of the FWM signals on the number of photons injected into the microcavity. By comparing simulation and experiment, which are in excellent agreement with each other, we infer that up to ~20 photons take part in the observed FWM dynamics. Thus we verify the validity of the JC model for the system under consideration in this non-trivial regime. We find that the inevitable coupling between the quantum dot exciton and longitudinal acoustic phonons of the host lattice influences the real time FWM dynamics and has to be taken into account for a sufficient description of the quantum dot-microcavity system. Performing additional simulations in an idealized dissipation-less regime, we observe that the FWM signal exhibits quasi-periodic dynamics, analog to the collapse and revival phenomenon of the JC model. In these simulations we also see that the FWM spectrum has a triplet structure, if a large number of photons is injected into the cavity.
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Submitted 12 June, 2020;
originally announced June 2020.
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Accurate photon echo timing by optical freezing of exciton dephasing and rephasing in quantum dots
Authors:
A. N. Kosarev,
H. Rose,
S. V. Poltavtsev,
M. Reichelt,
C. Schneider,
M. Kamp,
S. Hoefling,
M. Bayer,
T. Meier,
I. A. Akimov
Abstract:
Semiconductor quantum dots are excellent candidates for ultrafast coherent manipulation of qubits by laser pulses on picosecond timescales or even faster. In inhomogeneous ensembles a macroscopic optical polarization decays rapidly due to dephasing, which, however, is reversible in photon echoes carrying complete information about the coherent ensemble dynamics. Control of the echo emission time i…
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Semiconductor quantum dots are excellent candidates for ultrafast coherent manipulation of qubits by laser pulses on picosecond timescales or even faster. In inhomogeneous ensembles a macroscopic optical polarization decays rapidly due to dephasing, which, however, is reversible in photon echoes carrying complete information about the coherent ensemble dynamics. Control of the echo emission time is mandatory for applications. Here, we propose a novel concept to reach this goal. In a two-pulse photon echo sequence, we apply an additional resonant control pulse with multiple of 2pi area. Depending on its arrival time, the control slows down dephasing or rephasing of the exciton ensemble during its action. We demonstrate for self-assembled (In,Ga)As quantum dots that the photon echo emission time can be retarded or advanced by 5 ps relative to its nominal appearance time without control. This versatile protocol may be used to obtain significantly longer temporal shifts for suitably tailored control pulses.
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Submitted 9 June, 2020;
originally announced June 2020.
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Acoustic Phonon Sideband Dynamics During Polaron Formation in a Single Quantum Dot
Authors:
Daniel Wigger,
Vage Karakhanyan,
Christian Schneider,
Martin Kamp,
Sven Höfling,
Paweł Machnikowski,
Tilmann Kuhn,
Jacek Kasprzak
Abstract:
When an electron-hole pair is optically excited in a semiconductor quantum dot the host crystal lattice needs to adapt to the presence of the generated charge distribution. Therefore the coupled exciton-phonon system has to establish a new equilibrium, which is reached in the form of a quasiparticle called polaron. Especially, when the exciton is abruptly generated on a timescale faster than the t…
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When an electron-hole pair is optically excited in a semiconductor quantum dot the host crystal lattice needs to adapt to the presence of the generated charge distribution. Therefore the coupled exciton-phonon system has to establish a new equilibrium, which is reached in the form of a quasiparticle called polaron. Especially, when the exciton is abruptly generated on a timescale faster than the typical lattice dynamics, the lattice displacement cannot follow adiabatically. Consequently, a rich dynamics on the picosecond timescale of the coupled system is expected. In this study we combine simulations and measurements of the ultrafast, coherent, nonlinear optical response, obtained by four-wave mixing spectroscopy, to resolve the formation of this polaron. By detecting and investigating the phonon sidebands in the four-wave mixing spectra for varying pulse delays and different temperatures we have access to the influence of phonon emission and absorption processes which finally result in the emission of an acoustic wave packet out from the quantum dot.
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Submitted 9 January, 2020;
originally announced January 2020.
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Optical Thouless conductance and level-spacing statistics in two-dimensional Anderson localizing systems
Authors:
Sandip Mondal,
Randhir Kumar,
Martin Kamp,
Sushil Mujumdar
Abstract:
We experimentally investigate spectral statistics in Anderson localization in two-dimensional amorphous disordered media. Intensity distributions captured over an ultrabroad wavelength range of $\sim 600$~nm and averaged over numerous configurations provided the Ioffe-Regel parameter to be $\sim2.5$ over the investigated wavelength range. The spectra of the disordered structures provided access to…
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We experimentally investigate spectral statistics in Anderson localization in two-dimensional amorphous disordered media. Intensity distributions captured over an ultrabroad wavelength range of $\sim 600$~nm and averaged over numerous configurations provided the Ioffe-Regel parameter to be $\sim2.5$ over the investigated wavelength range. The spectra of the disordered structures provided access to several quasimodes, whose widths and separations allowed to directly estimate the optical Thouless conductance $g_{Th}$, consistently observed to be below unity. The probability distribution of $g_{Th}$ was measured to be a log-normal. Despite being in the Anderson localization regime, the spacings of energy levels of the system was seen to follow a near Wigner-Dyson function. Theoretical calculations based on the tight-binding model, modified to include coupling to a bath, yielded results that were in excellent agreement with experiments. From the model, the level-spacing behavior was attributed to the degree of localization obtained in the optical disordered system.
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Submitted 31 October, 2019;
originally announced October 2019.
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Discrepant transport characteristics under Anderson localization at the two limits of disorder
Authors:
Randhir Kumar,
Sandip Mondal,
M. Balasubrahmaniyam,
Martin Kamp,
Sushil Mujumdar
Abstract:
Anderson localization is a striking phenomenon wherein transport of light is arrested due to the formation of disorder-induced resonances. Hitherto, Anderson localization has been demonstrated separately in two limits of disorder, namely, amorphous disorder and nearly-periodic disorder. However, transport properties in the two limits are yet unstudied, particularly in a statistically consistent ma…
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Anderson localization is a striking phenomenon wherein transport of light is arrested due to the formation of disorder-induced resonances. Hitherto, Anderson localization has been demonstrated separately in two limits of disorder, namely, amorphous disorder and nearly-periodic disorder. However, transport properties in the two limits are yet unstudied, particularly in a statistically consistent manner. Here, we experimentally measure light transport across two-dimensional open mesoscopic structures, wherein the disorder systematically ranges from nearly-periodic to amorphous. We measure the generalized conductance, which quantifies the transport probability in the sample. Although localization was identified in both the limits, statistical measurements revealed a discrepant behavior in the generalized conductance fluctuations in the two disorder regimes. Under amorphous disorder, the generalized conductance remains below unity for any configuration of the disorder, attesting to the arrested nature of transport. Contrarily, at near-periodic disorder, the distribution of generalized conductance is heavy-tailed towards large conductance values, indicating that the overall transport is delocalized. Theoretical results from a model based on the tight-binding approximation, augmented to include open boundaries, are in excellent agreement with experiments, and also endorse the results over much larger ensembles. These results quantify the differences in the two disorder regimes, and advance the studies of disordered systems into actual consequences of Anderson localization in light transport.
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Submitted 31 October, 2019;
originally announced October 2019.
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Quantum interference between light sources separated by 150 million kilometers
Authors:
Yu-Hao Deng,
Hui Wang,
Xing Ding,
Z. -C. Duan,
Jian Qin,
M. -C. Chen,
Yu He,
Yu-Ming He,
Jin-Peng Li,
Yu-Huai Li,
Li-Chao Peng,
E. S. Matekole,
Tim Byrnes,
C. Schneider,
M. Kamp,
Da-Wei Wang,
Jonathan P. Dowling,
Sven Höfling,
Chao-Yang Lu,
Marlan O. Scully,
Jian-Wei Pan
Abstract:
We report an experiment to test quantum interference, entanglement and nonlocality using two dissimilar photon sources, the Sun and a semiconductor quantum dot on the Earth, which are separated by 150 million kilometers. By making the otherwise vastly distinct photons indistinguishable all degrees of freedom, we observe time-resolved two-photon quantum interference with a raw visibility of 0.796(1…
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We report an experiment to test quantum interference, entanglement and nonlocality using two dissimilar photon sources, the Sun and a semiconductor quantum dot on the Earth, which are separated by 150 million kilometers. By making the otherwise vastly distinct photons indistinguishable all degrees of freedom, we observe time-resolved two-photon quantum interference with a raw visibility of 0.796(17), well above the 0.5 classical limit, providing the first evidence of quantum nature of thermal light. Further, using the photons with no common history, we demonstrate post-selected two-photon entanglement with a state fidelity of 0.826(24), and a violation of Bell's inequality by 2.20(6). The experiment can be further extended to a larger scale using photons from distant stars, and open a new route to quantum optics experiments at an astronomical scale.
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Submitted 1 August, 2019; v1 submitted 7 May, 2019;
originally announced May 2019.
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99% beta factor and directional coupling of quantum dots to fast light in photonic crystal waveguides determined by hyperspectral imaging
Authors:
L. Scarpelli,
B. Lang,
F. Masia,
D. M. Beggs,
E. A. Muljarov,
A. B. Young,
R. Oulton,
M. Kamp,
S. Höfling,
C. Schneider,
W. Langbein
Abstract:
Spontaneous emission from excitonic transitions in InAs/GaAs quantum dots embedded in photonic crystal waveguides at 5K into non-guided and guided modes is determined by direct hyperspectral imaging. This enables measurement of the absolute coupling efficiency into the guided modes, the beta-factor, directly, without assumptions on decay rates used previously. Notably, we found beta-factors above…
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Spontaneous emission from excitonic transitions in InAs/GaAs quantum dots embedded in photonic crystal waveguides at 5K into non-guided and guided modes is determined by direct hyperspectral imaging. This enables measurement of the absolute coupling efficiency into the guided modes, the beta-factor, directly, without assumptions on decay rates used previously. Notably, we found beta-factors above 90% over a wide spectral range of 40meV in the fast light regime, reaching a maximum of (99 $\pm$ 1)%. We measure the directional emission of the circularly polarized transitions in a magnetic field into counter-propagating guided modes, to deduce the mode circularity at the quantum dot sites. We find that points of high directionality, up to 97%, correlate with a reduced beta-factor, consistent with their positions away from the mode field antinode. By comparison with calibrated finite-difference time-domain simulations, we use the emission energy, mode circularity and beta-factor to estimate the quantum dot position inside the photonic crystal waveguide unit cell.
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Submitted 3 May, 2019;
originally announced May 2019.
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Rabi oscillations of a quantum dot exciton coupled to acoustic phonons: coherence and population readout
Authors:
Daniel Wigger,
Christian Schneider,
Stefan Gerhardt,
Martin Kamp,
Sven Höfling,
Tilmann Kuhn,
Jacek Kasprzak
Abstract:
While the advanced coherent control of qubits is now routinely carried out in low frequency (GHz) systems like single spins, it is far more challenging to achieve for two-level systems in the optical domain. This is because the latter evolve typically in the THz range, calling for tools of ultrafast, coherent, nonlinear optics. Using four-wave mixing micro-spectroscopy, we here measure the optical…
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While the advanced coherent control of qubits is now routinely carried out in low frequency (GHz) systems like single spins, it is far more challenging to achieve for two-level systems in the optical domain. This is because the latter evolve typically in the THz range, calling for tools of ultrafast, coherent, nonlinear optics. Using four-wave mixing micro-spectroscopy, we here measure the optically driven dynamics of a single exciton quantum state confined in a semiconductor quantum dot. In a combined experimental and theoretical approach, we reveal the intrinsic Rabi oscillation dynamics by monitoring both central exciton quantities, i.e., its occupation and the microscopic coherence, as resolved by the four-wave mixing technique. In the frequency domain this oscillation generates the Autler-Townes splitting of the light-exciton dressed states, directly seen in the four-wave mixing spectra. We further demonstrate that the coupling to acoustic phonons strongly influences the FWM dynamics on the picosecond timescale, because it leads to transitions between the dressed states.
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Submitted 27 September, 2018;
originally announced September 2018.
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Phase-dependent heat and charge transport through superconductor-quantum dot hybrids
Authors:
Mathias Kamp,
Björn Sothmann
Abstract:
We analyze heat and charge transport through a single-level quantum dot coupled to two BCS superconductors at different temperatures to first order in the tunnel coupling. In order to describe the system theoretically, we extend a real-time diagrammatic technique that allows us to capture the interplay between superconducting correlations, strong Coulomb interactions, and nonequilibrium physics. W…
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We analyze heat and charge transport through a single-level quantum dot coupled to two BCS superconductors at different temperatures to first order in the tunnel coupling. In order to describe the system theoretically, we extend a real-time diagrammatic technique that allows us to capture the interplay between superconducting correlations, strong Coulomb interactions, and nonequilibrium physics. We find that a thermoelectric effect can arise due to the superconducting proximity effect on the dot. In the nonlinear regime, the thermoelectric current can also flow at the particle-hole symmetric point due to a level renormalization caused by virtual tunneling between the dot and the leads. The heat current through the quantum dot is sensitive to the superconducting phase difference. In the nonlinear regime, the system can act as a thermal diode.
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Submitted 25 January, 2019; v1 submitted 25 September, 2018;
originally announced September 2018.
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Controlled ordering of topological charges in an exciton-polariton chain
Authors:
T. Gao,
O. A. Egorov,
E. Estrecho,
K. Winkler,
M. Kamp,
C. Schneider,
S. Hoefling,
A. G. Truscott,
E. A. Ostrovskaya
Abstract:
We demonstrate, experimentally and theoretically, controlled loading of an exciton-polariton vortex chain into a 1D array of trapping potentials. Switching between two types of vortex chains, with topological charges of the same or alternating sign, is realised by means of appropriate shaping of an incoherent pump beam that drives the system to the regime of bosonic condensation. In analogy to spi…
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We demonstrate, experimentally and theoretically, controlled loading of an exciton-polariton vortex chain into a 1D array of trapping potentials. Switching between two types of vortex chains, with topological charges of the same or alternating sign, is realised by means of appropriate shaping of an incoherent pump beam that drives the system to the regime of bosonic condensation. In analogy to spin chains, these vortex sequences realise either a "ferromagnetic" or an "anti-ferromagnetic" order, whereby the role of spin is played by the orbital angular momentum. The "ferromagnetic" ordering of vortices is associated with the formation of a persistent chiral current. Our results pave the way for controlled creation of nontrivial distributions of orbital angular momentum and topological order in a periodic exciton-polariton system.
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Submitted 6 July, 2018;
originally announced July 2018.
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Observation of the transition from lasing driven by a bosonic to a fermionic reservoir in a GaAs quantum well microcavity
Authors:
S. Brodbeck,
H. Suchomel,
M. Amthor,
T. Steinl,
M. Kamp,
C. Schneider,
S. Hoefling
Abstract:
We show that, by monitoring the free carrier reservoir in a GaAs-based quantum well microcavity under nonresonant pulsed optical pumping, lasing supported by a fermionic reservoir (photon lasing) can be distinguished from lasing supported by a reservoir of bosons (polariton lasing). Carrier densities are probed by measuring the photocurrent between lateral contacts deposited directly on the quantu…
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We show that, by monitoring the free carrier reservoir in a GaAs-based quantum well microcavity under nonresonant pulsed optical pumping, lasing supported by a fermionic reservoir (photon lasing) can be distinguished from lasing supported by a reservoir of bosons (polariton lasing). Carrier densities are probed by measuring the photocurrent between lateral contacts deposited directly on the quantum wells of a microcavity that are partially exposed by wet chemical etching. We identify two clear thresholds in the input-output characteristic of the photoluminescence signal which can be attributed to polariton and photon lasing, respectively. The power dependence of the probed photocurrent shows a distinct kink at the threshold power for photon lasing due to an increased radiative recombination of free carriers as stimulated emission into the cavity mode sets in. At the polariton lasing threshold, on the other hand, the nonlinear increase of the luminescence is caused by stimulated scattering of exciton polaritons to the ground state which do not contribute directly to the photocurrent.
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Submitted 1 October, 2017;
originally announced October 2017.
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Exploring the Photon-Number Distribution of Bimodal Microlasers
Authors:
Elisabeth Schlottmann,
Martin von Helversen,
Heinrich A. M. Leymann,
Thomas Lettau,
Felix Krüger,
Marco Schmidt,
Christian Schneider,
Martin Kamp,
Sven Höfling,
Jörn Beyer,
Jan Wiersig,
Stephan Reitzenstein
Abstract:
A photon-number resolving transition edge sensor (TES) is used to measure the photon-number distribution of two microcavity lasers. The investigated devices are bimodal microlasers with similar emission intensity and photon statistics with respect to the photon auto-correlation. Both high-$β$ microlasers show partly thermal and partly coherent emission around the lasing threshold. For higher pump…
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A photon-number resolving transition edge sensor (TES) is used to measure the photon-number distribution of two microcavity lasers. The investigated devices are bimodal microlasers with similar emission intensity and photon statistics with respect to the photon auto-correlation. Both high-$β$ microlasers show partly thermal and partly coherent emission around the lasing threshold. For higher pump powers, the strong mode of microlaser A emits Poissonian distributed photons while the emission of the weak mode is thermal. In contrast, laser B shows a bistability resulting in overlayed thermal and Poissonian distributions. While a standard Hanbury Brown and Twiss experiment cannot distinguish between simple thermal emission of laser A and the mode switching of laser B, a TES allows us to measure the photon-number distribution which provides important insight into the underlying emission processes. Indeed, our experimental data and its theoretical description by a master equation approach show that TESs are capable of revealing subtle effects like temporal mode switching of bimodal microlasers. As such our studies clearly demonstrate the huge benefit and importance of investigating nanophotonic devices via photon-number resolving sensors.
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Submitted 25 September, 2017; v1 submitted 13 September, 2017;
originally announced September 2017.
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Dynamics of the Optical Spin Hall Effect
Authors:
Daniel Schmidt,
Bernd Berger,
Manfred Bayer,
Christian Schneider,
Martin Kamp,
Sven Höfling,
Evgeny Sedov,
Alexey Kavokin,
Marc Aßmann
Abstract:
We study the time evolution of the Optical Spin Hall Effect (OSHE), which occurs when exciton-polaritons undergo resonant Rayleigh scattering. The resulting spin pattern in momentum space is quantified by calculating the degree of circular polarization of the momentum space image for each point in time. We find the degree of circular polarization performing oscillations, which can be described wit…
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We study the time evolution of the Optical Spin Hall Effect (OSHE), which occurs when exciton-polaritons undergo resonant Rayleigh scattering. The resulting spin pattern in momentum space is quantified by calculating the degree of circular polarization of the momentum space image for each point in time. We find the degree of circular polarization performing oscillations, which can be described within the framework of the pseudospin model by Kavokin et al. (Ref. 1).
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Submitted 28 August, 2017;
originally announced August 2017.
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Dimensionality-driven metal-insulator-transition in spin-orbit coupled SrIrO$_3$
Authors:
P. Schütz,
D. Di Sante,
L. Dudy,
J. Gabel,
M. Stübinger,
M. Kamp,
Y. Huang,
M. Capone,
M. -A. Husanu,
V. Strocov,
G. Sangiovanni,
M. Sing,
R. Claessen
Abstract:
Upon reduction of the film thickness we observe a metal-insulator transition in epitaxially stabilized, spin-orbit coupled SrIrO$_3$ ultrathin films. By comparison of the experimental electronic dispersions with density functional theory at various levels of complexity we identify the leading microscopic mechanisms, i.e., a dimensionality-induced re-adjustment of octahedral rotations, magnetism, a…
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Upon reduction of the film thickness we observe a metal-insulator transition in epitaxially stabilized, spin-orbit coupled SrIrO$_3$ ultrathin films. By comparison of the experimental electronic dispersions with density functional theory at various levels of complexity we identify the leading microscopic mechanisms, i.e., a dimensionality-induced re-adjustment of octahedral rotations, magnetism, and electronic correlations. The astonishing resemblance of the band structure in the two-dimensional limit to that of bulk Sr$_2$IrO$_4$ opens new avenues to unconventional superconductivity by "clean" electron doping through electric field gating.
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Submitted 29 June, 2017;
originally announced June 2017.