Showing 1–50 of 104 results for author: Ang, Y S

Ultralow p-type contact resistance for ultra-nanoscaled 2D-materials transistors

Authors: Ying Xiong, Tong Su, Qiang Li, Yee Sin Ang, Lain-Jong Li, L. K. Ang

Abstract: High contact resistance is one of the main bottlenecks for practical two-dimensional (2D) materials transistors, especially for p-type transistors and future 2D ultra-nanoscaled (sub-10 nm) FETs (PMOS + CMOS). We develop self-consistent contact resistance models for metal-2D semiconductor-metal devices to capture the essential interface physics for both vertical and edge configurations. Our calcul… ▽ More High contact resistance is one of the main bottlenecks for practical two-dimensional (2D) materials transistors, especially for p-type transistors and future 2D ultra-nanoscaled (sub-10 nm) FETs (PMOS + CMOS). We develop self-consistent contact resistance models for metal-2D semiconductor-metal devices to capture the essential interface physics for both vertical and edge configurations. Our calculations have been verified with various recent experiments of p-type and n-type contacts. For a given set of materials, the model determines the scaling of contact resistance over a wide range of device parameters including channel length (100s nm down to sub-10 nm), doping and mobility of the 2D materials, contact length of the electrodes, and applied voltages. These results identify the key factors in order to reduce the contact resistance for p-type 2D semiconductor WSe$_2$ towards the sub-10 nm channel length scale that are readily to be realized by future experiments. It is found that the effect of source-limited current saturation is the key challenge for down scaling 2D FET to sub-10 nm channel length. Two topological semi-metals as potential electrodes are proposed for 2D p-type semiconducting WSe$_2$ with our predicted contact resistance $R_c<$ 100 $Ω\; {\rm μm}$ approaching the quantum limit. Our model is also verified with the computational expensive full quantum atomistic model that is currently limited to a few nm scale. △ Less

Submitted 7 August, 2026; originally announced August 2026.

Hybrid-parity sliding multiferroics

Authors: Zhenzhou Guo, Jiangtao Yu, Shibo Fang, Jin Cao, Xiaodong Zhou, Yee Sin Ang, Wenhong Wang, Zhenxiang Cheng, Xiaotian Wang

Abstract: Sliding ferroelectrics provide a nonvolatile platform for the electrical control of unconventional magnetism through reversible interlayer sliding. However, the coupling between sliding ferroelectricity and hybrid-parity nonrelativistic spin splitting (NSS) remains largely unexplored. Here, we introduce a class of hybrid-parity sliding multiferroics in which the spontaneous ferroelectric polarizat… ▽ More Sliding ferroelectrics provide a nonvolatile platform for the electrical control of unconventional magnetism through reversible interlayer sliding. However, the coupling between sliding ferroelectricity and hybrid-parity nonrelativistic spin splitting (NSS) remains largely unexplored. Here, we introduce a class of hybrid-parity sliding multiferroics in which the spontaneous ferroelectric polarization is coupled to certain NSS components through interlayer sliding, allowing these components to be reversibly switched in an electrical way. Symmetry analysis identifies coplanar magnets as natural platforms for realizing this form of sliding multiferroicity. First-principles calculations establish bilayer VBr$_2$ as a representative example, demonstrating the coupled reversal of the out-of-plane ferroelectric polarization ($\pm$0.12 pC/m) and the signs of both even- and odd-parity NSS components via an interlayer-sliding pathway with an ultralow barrier of 6 meV/f.u. The signs of these NSS components are locked to the sliding-switchable ferroelectric polarization and encoded in the spin-current responses, providing a signature of the coupled ferroic switching. Our findings expand the scope of sliding multiferroics and the functionality of sliding ferroelectrics for low-energy, nonvolatile logic devices. △ Less

Submitted 27 July, 2026; originally announced July 2026.

Mirror-Symmetry-Enforced Photonic Altermagnet

Authors: Chong Cao, Xiong-Xiong Xue, Yee Sin Ang, Haiyu Meng

Abstract: Altermagnets host momentum-dependent spin splitting without net magnetization, a symmetry-enforced band phenomenon whose photonic analogues have so far been realized only in square lattices governed by fourfold rotation. Here we introduce a photonic altermagnet on a hexagonal lattice whose helicity splitting is governed by mirror rather than rotational symmetry. Elliptical chiral elements of alter… ▽ More Altermagnets host momentum-dependent spin splitting without net magnetization, a symmetry-enforced band phenomenon whose photonic analogues have so far been realized only in square lattices governed by fourfold rotation. Here we introduce a photonic altermagnet on a hexagonal lattice whose helicity splitting is governed by mirror rather than rotational symmetry. Elliptical chiral elements of alternating handedness, placed at the vertices of a regular hexagon, leave the two opposite-chirality sublattices connected only by chirality reversal combined with a mirror reflection. Full-wave simulations reveal mirror-related splitting of the two opposite-helicity branches in the band structure and isofrequency contours, with the channels exchanged when the ellipse orientation is reversed. Using a finite photonic crystal slab, we show that such splitting separates a linearly polarized beam into handedness-resolved channels, thus enabling beam splitting and direction-selective helicity filtering with target-helicity output fractions above 0.85 and output paths continuously tunable through the ellipse rotation angle. These results extend photonic altermagnetism to a previously unexplored lattice-symmetry class and establish mirror-symmetric chiral textures as building blocks for altermagnetism-inspired on-chip chiral photonics. △ Less

Submitted 23 June, 2026; v1 submitted 19 June, 2026; originally announced June 2026.

Comments: 12 pages, 6 figures

Pure Spin Photocurrent in Altermagnetic Photovoltaic Battery

Authors: Qiang Li, Shibo Fang, Zongmeng Yang, Xingyue Yang, Jianhua Wang, Rui Peng, Lin Zhu, Shuhua Wang, Dexing Liu, Min Zhang, Dahua Ren, Mai Zhang, Han Zhang, Yee Sin Ang

Abstract: Altermagnets, featuring momentum-dependent spin splitting without net magnetization, provide a promising platform for spintronic functionalities beyond conventional ferromagnets and antiferromagnets. Here, we propose an altermagnetic spin photovoltaic battery consisting of a nonmagnetic semiconducting layer sandwiched between two altermagnetic electrodes. Using first-principles quantum-transport s… ▽ More Altermagnets, featuring momentum-dependent spin splitting without net magnetization, provide a promising platform for spintronic functionalities beyond conventional ferromagnets and antiferromagnets. Here, we propose an altermagnetic spin photovoltaic battery consisting of a nonmagnetic semiconducting layer sandwiched between two altermagnetic electrodes. Using first-principles quantum-transport simulations, we show that a V2Te2O/ZnSe/V2Te2O junction supports a pure spin photocurrent for opposite Néel vectors in the two altermagnetic electrodes, with spin-up and spin-down photocurrents equal in magnitude and opposite in sign. The effect persists under both linearly and circularly polarized light and remains tunable with photon energy and polarization angle. Our results establish a realistic route toward light-driven pure spin-current generation in altermagnetic junctions. △ Less

Submitted 29 May, 2026; originally announced May 2026.

Chips in the Flatland : 2D Semiconductors for Future Computing Electronic

Authors: Narin Trakarnvanich, Mitra Sanchali, Tong Su, Haiyu Meng, Jing Lu, Kah-Wee Ang, Lain-Jong Li, Chit Siong Lau, Yee Sin Ang

Abstract: As transistor scaling approaches its fundamental physical limits in the Angstrom era, two-dimensional (2D) semiconductors have emerged as the promising channel material candidates for future computing. While the device physics of 2D semiconductors have been rigorously explored, translating these nanodevices into fully functional integrated circuits remains a largely uncharted frontier. This review… ▽ More As transistor scaling approaches its fundamental physical limits in the Angstrom era, two-dimensional (2D) semiconductors have emerged as the promising channel material candidates for future computing. While the device physics of 2D semiconductors have been rigorously explored, translating these nanodevices into fully functional integrated circuits remains a largely uncharted frontier. This review bridges the gap between material- and device-centric breakthroughs and circuit-level chip design in 2D semiconductors, a valley of death that has so far prevented translation of high-performance individual transistors into functional chips. We track the evolution of 2D semi-conductor field-effect transistors from basic Boolean logic families and standard cells to complex chip architectures, including recent milestones in RISC-V and monolithic CMOS microprocessors. Critically, we highlight the indispensable role of multiscale compact modeling, spanning semiclassical, quantum-hybrid and data-driven approaches, as the necessary link between device physics and the electronic design automation workflows for scalable chip development. By summarizing recent breakthroughs and identifying the bottlenecks in both fab and fabless trajectories of 2D semiconductors, this review shall provide insights that motivates the translation of proof-of-concept 2D transistors into fully functional computing chips, paving a way towards future Angstrom era computing technology empowered by 2D semiconductors. △ Less

Submitted 26 May, 2026; originally announced May 2026.

Tunable high-$Q$ Janus-to-chiral bound states in the continuum in bilayer PhCs

Authors: Zhexing Dong, Shengxuan Xia, Yee Sin Ang, Haiyu Meng

Abstract: We propose a bilayer all-dielectric PhC for controlling Janus bound states in the continuum (BIC) and optical chirality through symmetry-selective perturbations. Starting from a symmetry-protected $Γ$-point BIC, we use interlayer displacement as one geometric control knob to generate different topological charges in the upward radiation and downward radiation channels. A subsequent diagonal in-pla… ▽ More We propose a bilayer all-dielectric PhC for controlling Janus bound states in the continuum (BIC) and optical chirality through symmetry-selective perturbations. Starting from a symmetry-protected $Γ$-point BIC, we use interlayer displacement as one geometric control knob to generate different topological charges in the upward radiation and downward radiation channels. A subsequent diagonal in-plane displacement reconstructs the polarization topology around the BIC and generates a Janus-chiral BIC with strong handedness selectivity. In contrast, other in-plane perturbations generate chiral quasi-BICs with finite radiative coupling, for which the circular dichroism (CD) and resonance wavelength can be continuously tuned. We further show that material conductivity provides an additional dissipative degree of freedom for actively modulating the chiral response, with a switchable CD exceeding 0.89. Near-field optical-chirality distributions and multipole decompositions reveal that the chiral response originates from a symmetry-induced imbalance of local optical handedness and a spin-selective magnetic-dipole resonance. These results reveal the topological relationship between Janus radiation, polarization singularities and intrinsic chirality, thus paving a scalable route toward reconfigurable high-$Q$ chiral photonics. △ Less

Submitted 14 May, 2026; originally announced May 2026.

SemiConLens: Visual Analytics for 2D Semiconductor Discovery

Authors: Kavinda Athapaththu, Shiwei Chen, Yuan Fang, Sanchali Mitra, Yee Sin Ang, Yong Wang

Abstract: The past few years have witnessed vibrant efforts in discovering new two-dimensional (2D) semiconductor materials from both academia and the industry, due to their promising potential in resolving the severe performance deterioration of traditional semiconductors resulting from condensed silicon thickness. However, existing methods (e.g., Density Functional Theory (DFT) or machine-learning-based a… ▽ More The past few years have witnessed vibrant efforts in discovering new two-dimensional (2D) semiconductor materials from both academia and the industry, due to their promising potential in resolving the severe performance deterioration of traditional semiconductors resulting from condensed silicon thickness. However, existing methods (e.g., Density Functional Theory (DFT) or machine-learning-based approaches) suffer from various challenges such as small datasets, and reliability and trustworthiness issues. To bridge this gap, we propose SemiConLens, a visual analytics approach to combine human expertise with the power of ML to enable effective and reliable 2D semiconductor discovery. Specifically, we first develop a new Correlation Aware Multivariate Imputation (CAMI) method and use ML models like autoencoder, which can better learn from limited data and reveal uncertainty, to address the challenge of sparse data in semiconductivity prediction. Built upon this, our visualization module, consisting of three visualization views with linked interactions, allows material researchers to interactively filter, discover and compare 2D semiconductor candidates. A novel circular glyph design and a new cluster-aware layout optimization approach are proposed to effectively display all the user-configurable key attributes and possible prediction uncertainties of each semiconductor candidate, ensuring a reliable and trustable 2D semiconductor discovery. We assess SemiConLens through quantitative evaluations, expert interviews, and use cases. The results demonstrate SemiConLens's capability to help material researchers conduct effective discovery of desirable 2D semiconductors. △ Less

Submitted 11 April, 2026; originally announced May 2026.

Ferroelectric Band Twinning from Pair-State Symmetry

Authors: Shibo Fang, Jianhua Wang, Zhenzhou Guo, Jialing Gong, Haiyu Meng, Ruixiang Fei, Wenhong Wang, Xiaotian Wang, Zhenxiang Cheng, Yee Sin Ang

Abstract: Ferroelectric switching provides a nonvolatile way to control electronic structures, but a general symmetry rule connecting the full Bloch bands of two switchable polarization states is still lacking. Here, we introduce ferroelectric band twinning, a pair-state relation in which the bands of two opposite-polarization states are mapped onto each other by a non-inversion state-exchange symmetry. Usi… ▽ More Ferroelectric switching provides a nonvolatile way to control electronic structures, but a general symmetry rule connecting the full Bloch bands of two switchable polarization states is still lacking. Here, we introduce ferroelectric band twinning, a pair-state relation in which the bands of two opposite-polarization states are mapped onto each other by a non-inversion state-exchange symmetry. Using dichromatic groups, we derive the band-twinning rule and identify 11 ferroelectric band-twinning point-group classes. Screening the Ferroelectric Materials Database yields 16 candidate compounds, of which the two lattice-metric-preserving candidates, bulk gamma-Ag3SI and BaAl2O4, are selected for first-principles validation. For gamma-Ag3SI, we further show that the same pair-state symmetry controls the transformation of shift-current tensor components under polarization reversal. These results establish ferroelectric band twinning as a general symmetry framework for nonvolatile control of momentum-dependent electronic structures in ferroelectrics. △ Less

Submitted 5 August, 2026; v1 submitted 8 April, 2026; originally announced April 2026.

Comments: This replacement retains the central concept of the previous version but substantially revises the examples, theoretical framework, and overall presentation. Although the new version differs considerably from the earlier manuscript, we chose to replace the arXiv submission to avoid confusion regarding the concept and its terminology

Anyon-Induced Criticality and Dynamical Stability in Non-Hermitian Many-Body Systems

Authors: Yi Qin, Yee Sin Ang, Linhu Li, Ching Hua Lee

Abstract: We show that anyonic statistics fundamentally reshapes non-Hermitian many-body physics by intrinsically breaking pseudo-Hermiticity, leading to a unique real-complex spectral transition with characteristically dense states in Im$E$. This anyon-induced transition occurs even when bosonic and pseudofermionic counterparts remain entirely real, revealing a form of non-Hermitian criticality driven pure… ▽ More We show that anyonic statistics fundamentally reshapes non-Hermitian many-body physics by intrinsically breaking pseudo-Hermiticity, leading to a unique real-complex spectral transition with characteristically dense states in Im$E$. This anyon-induced transition occurs even when bosonic and pseudofermionic counterparts remain entirely real, revealing a form of non-Hermitian criticality driven purely by exchange statistics. The resulting spectrum exhibits enhanced gaps in Im$E$ that dynamically isolate dominant eigenstates, producing anomalously stable short-time quench dynamics for anyons. Our results identify anyonic statistics as an intrinsic mechanism for generating unconventional non-Hermitian critical behavior usually associated with highly non-local systems. △ Less

Submitted 18 March, 2026; originally announced March 2026.

Comments: 19 pages, 12 figures

Sliding Ferroelectricity Driven Spin-Layertronics in Altermagnetic Multilayers

Authors: Rui Peng, Guangxu Su, Yangyang Fan, Jiaan Li, Fanxin Liu, Yee Sin Ang

Abstract: The synergy of ferroicity with altermagnetism offers a novel platform for designing multifunctional altermagnetic-spintronic device technology. In this work, we propose a mechanism to achieve nonvolatile electrical manipulation of spin and layer degrees of freedom in an altermagnetic bilayer via sliding ferroelectricity. Using first-principles calculations, we show that an interlayer translation c… ▽ More The synergy of ferroicity with altermagnetism offers a novel platform for designing multifunctional altermagnetic-spintronic device technology. In this work, we propose a mechanism to achieve nonvolatile electrical manipulation of spin and layer degrees of freedom in an altermagnetic bilayer via sliding ferroelectricity. Using first-principles calculations, we show that an interlayer translation can induce a switchable out-of-plane ferroelectric polarization in bilayer CuF2, which directly couples to and reverses the d-wave altermagnetic spin splitting. Notably, the altermangetic spin splitting is layer-locked, the sliding ferroelectricity-driven switching thus embodying a nonvolatile spin-layertronics functionality that couples spin-polarized transport and layer degree of freedom in a single platform. We show that in quadrilayer CuF2, four polarization states are identified which may offer multi-state logic device applications. These findings establish sliding ferroelectricity as a versatile tool for designing voltage-controlled, high-speed and energy-efficient spin-layertronic devices based on altermagnets. △ Less

Submitted 11 March, 2026; originally announced March 2026.

Altermagnetic Flatband-Driven Fermi Surface Geometry for Giant Tunneling Magnetoresistance

Authors: Xingyue Yang, Shibo Fang, Zongmeng Yang, Pin Ho, Jing Lu, Yee Sin Ang

Abstract: Altermagnetism, characterized by zero net magnetization and symmetry-protected spin-split band structures, has recently emerged as a promising platform for spintronics. In altermagnetic tunnel junctions (AMTJs), the suppression of tunneling in the antiparallel configuration relies on the mismatch between spin-polarized conduction channels in momentum space. However, ideal nonoverlapping spin-polar… ▽ More Altermagnetism, characterized by zero net magnetization and symmetry-protected spin-split band structures, has recently emerged as a promising platform for spintronics. In altermagnetic tunnel junctions (AMTJs), the suppression of tunneling in the antiparallel configuration relies on the mismatch between spin-polarized conduction channels in momentum space. However, ideal nonoverlapping spin-polarized Fermi surfaces are rarely found in bulk altermagnets. Motivated by the critical influence of Fermi surface geometry on tunneling magnetoresistance (TMR), we investigate three experimentally synthesized altermagnets -- bulk $\mathrm{V_2Te_2O}$, $\mathrm{RbV_2Te_2O}$, and $\mathrm{KV_2Se_2O}$ -- to elucidate how flatband-driven Fermi surfaces minimize spin-channel overlap and boost AMTJ performance. Notably, $\mathrm{RbV_2Te_2O}$ and $\mathrm{KV_2Se_2O}$ host flat altermagnetic Fermi sheets, which confine spin degeneracy to minimal arc-like or nodal-like regions. Such Fermi surface geometry drastically reduces spin overlap, resulting in an unprecedented intrinsic TMR well over $10^3\%$ in the $\mathrm{KV_2Se_2O}$-based AMTJ. Incorporating an insulating barrier further enhances the TMR to $\sim10^6\%$, surpassing most conventional MTJs. These results not only establish $\mathrm{KV_2Se_2O}$ as a compelling candidate AMTJ material, but also highlight the critical role of flatband Fermi surface geometry in achieving high-performance altermagnetic-spintronic device technology. △ Less

Submitted 9 March, 2026; v1 submitted 21 November, 2025; originally announced November 2025.

Comments: Accepted for publication in Advanced Functional Materials (2026)

Journal ref: Adv. Funct. Mater. (2026), e31921

Stochasticity-induced non-Hermitian skin criticality

Authors: Xiaoyu Cheng, Hui Jiang, Jun Chen, Lei Zhang, Yee Sin Ang, Ching Hua Lee

Abstract: Typically, scaling up the size of a system does not change the shape of its energy spectrum, other than making it denser. Exceptions, however, occur in the new phenomenon of non-Hermitian skin criticality, where closely competing generalized Brillouin zone (GBZ) solutions for non-Hermitian state accumulation give rise to anomalously scaling complex spectra. In this work, we discover that such non-… ▽ More Typically, scaling up the size of a system does not change the shape of its energy spectrum, other than making it denser. Exceptions, however, occur in the new phenomenon of non-Hermitian skin criticality, where closely competing generalized Brillouin zone (GBZ) solutions for non-Hermitian state accumulation give rise to anomalously scaling complex spectra. In this work, we discover that such non-Hermitian criticality can generically emerge from stochasticity in the lattice bond orientation, a surprising phenomenon only possible in 2D or beyond. Marked by system size-dependent amplification rate, it can be physically traced to the proliferation of feedback loops arising from excess local non-Hermitian skin effect (NHSE) accumulation induced by structural disorder. While weak disorder weakens the amplification as intuitively anticipated, stronger disorder enigmatically strengthens the amplification almost universally, scaling distinctly from conventional critical system. By representing cascades of local excess NHSE as ensembles of effectively coupled chains, we analytically derived a critical GBZ that predicts how state amplification scales with the system size and disorder strength, highly consistent with empirical observations. Our new mechanism for disordered-facilitated amplification applies generically to structurally perturbed non-Hermitian lattices with broken reciprocity, and would likely find applications in non-Hermitian sensing through various experimentally mature meta-material platforms. △ Less

Submitted 17 November, 2025; originally announced November 2025.

Comments: 22 pages,18 figures

Two-Dimensional Altermagnetism in Epitaxial CrSb Ultrathin Films

Authors: Keren Li, Yuzhong Hu, Yue Li, Ruohang Xu, Shaozhong Ma, Heping Li, Kun Liu, Chen Liu, Lu Cao, Jincheng Zhuang, Yee Sin Ang, Jiaou Wang, Haifeng Feng, Weichang Hao, Yi Du

Abstract: Altermagnets constitute an emerging class of collinear magnets that exhibit zero net magnetization yet host spin-split electronic bands arising from non-relativistic spin-space-group symmetries. Realization of altermagnetism in the two-dimensional (2D) limit remains an outstanding challenge because dimensional reduction suppresses kZ dispersion and destabilizes the symmetry operations essential fo… ▽ More Altermagnets constitute an emerging class of collinear magnets that exhibit zero net magnetization yet host spin-split electronic bands arising from non-relativistic spin-space-group symmetries. Realization of altermagnetism in the two-dimensional (2D) limit remains an outstanding challenge because dimensional reduction suppresses kZ dispersion and destabilizes the symmetry operations essential for spin compensation. Here, we investigate ultrathin CrSb films grown epitaxially on Bi2Te3 substrate and uncover the evolution of altermagnetism in the 2D limit. Scanning tunneling microscopy (STM), quasiparticle interference (QPI), angle-resolved photoemission spectroscopy (ARPES), and density functional theory (DFT) calculations show that interfacial symmetry breaking in the one-unit-cell (1 UC) limit gives rise to localized electronic states and uncompensated magnetic moments. These interfacial effects become weakened from 7/4 UC, accompanied by the recovery of a bulk-like coordination environment and the emergence of altermagnetic electronic characteristics. Our results show that the essential altermagnetic electronic structure of CrSb survives at a thickness of only ~1.05 nm, demonstrating the robustness of altermagnetism in the 2D limit and opening opportunities for integrating stray-field-free spin order into low dimensional spintronic architectures. △ Less

Submitted 3 July, 2026; v1 submitted 14 October, 2025; originally announced October 2025.

Comments: 18 pages, 4 figures

Achieving fully-compensated ferrimagnetism through two-dimensional heterojunctions

Authors: San-Dong Guo, Junjie He, Yee Sin Ang

Abstract: In addition to altermagnets, fully-compensated ferrimagnets are another category of collinear magnetic materials that possess zero-net total magnetic moment and exhibit spin-splitting, making them promising for low-energy spintronics, high-density data storage and high-sensitivity sensors. Although many methods, such as alloying, external electric field, Janus engineering, ferroelectric field and… ▽ More In addition to altermagnets, fully-compensated ferrimagnets are another category of collinear magnetic materials that possess zero-net total magnetic moment and exhibit spin-splitting, making them promising for low-energy spintronics, high-density data storage and high-sensitivity sensors. Although many methods, such as alloying, external electric field, Janus engineering, ferroelectric field and spin ordering, have been proposed to achieve fully-compensated ferrimagnetism, these approaches either face experimental difficulties or produce a small spin-splitting or are volatile. Here, we propose to form vertical heterostructures by stacking two different but equally magnetized two-dimensional ferromagnetic materials. If an A-type antiferromagnetic ordering is satisfied, a fully compensated ferrimagnet can be formed. This vertical heterostructure approach is insensitive to lattice matching and stacking manner, thus being more conducive to experimental realization. Through first-principles calculations, we verify our proposal with several examples, focusing in particular on $\mathrm{CrI_3}$/$\mathrm{CrGeTe_3}$ heterojunction composed of experimentally synthesized $\mathrm{CrI_3}$ and $\mathrm{CrGeTe_3}$ monolayers. The calculations show that $\mathrm{CrI_3}$/$\mathrm{CrGeTe_3}$ is a fully-compensated ferrimagnet, with pronounced spin-splitting, and that tensile strain is more favorable for achieving fully-compensated ferrimagnetism. Our work provides an experimentally feasible strategy for realizing fully-compensated ferrimagnetism, thereby further advancing the development of this field. △ Less

Submitted 12 September, 2025; originally announced September 2025.

Comments: 7 pages, 5 figures

Generalized Brillouin Zone Fragmentation

Authors: Haiyu Meng, Yee Sin Ang, Ching Hua Lee

Abstract: The Generalized Brillouin Zone (GBZ) encodes how lattice momentum is complex-deformed due to non-Hermitian skin accumulation, and has proved essential in restoring bulk-boundary correspondences. However, we find that generically, the GBZ is neither unique nor well-defined if more than one skin localization direction or strength exists, even in systems with no asymmetric hoppings. Instead, open bou… ▽ More The Generalized Brillouin Zone (GBZ) encodes how lattice momentum is complex-deformed due to non-Hermitian skin accumulation, and has proved essential in restoring bulk-boundary correspondences. However, we find that generically, the GBZ is neither unique nor well-defined if more than one skin localization direction or strength exists, even in systems with no asymmetric hoppings. Instead, open boundary condition (OBC) eigenstates become complicated superpositions of multiple competing skin modes from "fragments" of all possible GBZs solutions. We develop a formalism that computes the fragmented GBZ in a scalable manner, with fragmentation extent quantified through our newly-defined composition IPR and spectral relative entropy. GBZ fragmentation is revealed to fundamentally challenge the notion of discontinuous phase transitions, since topological winding contributions from different GBZ fragments can "melt away" at different rates. Phenomenologically, GBZ fragmentation also leads to edge localization in all observables in energetically weighted ensembles such as thermal ensembles. This contrasts with conventional GBZs where the skin localization completely cancels in biorthogonal expectations. Occurring universally in multi-mode non-Hermitian media, as we concretely demonstrate with photonic crystal simulations, GBZ fragmentation points towards a new paradigm that is essential for understanding the band structure and the topological and dynamical properties of diverse generic non-Hermitian systems. △ Less

Submitted 15 February, 2026; v1 submitted 18 August, 2025; originally announced August 2025.

Comments: 35 pages, 24 figures

One-dimensional electronics with edge states in two-dimensional altermagnets

Authors: Shibo Fang, Zongmeng Yang, Jianhua Wang, Xingyue Yang, Jing Lu, Ching Hua Lee, Xiaotian Wang, Yee Sin Ang

Abstract: The coupling between real-space inhomogeneities coordinates and spin (r-s) provides an alternative route to achieve efficient spin manipulation in spintronics beyond the conventional momentum-spin (k-s) coupling paradigm. Here we demonstrate an unexpected manifestation of one-dimensional (1D) r-s coupling in two-dimensional (2D) altermagnetic second-order topological insulators, where the spin-spl… ▽ More The coupling between real-space inhomogeneities coordinates and spin (r-s) provides an alternative route to achieve efficient spin manipulation in spintronics beyond the conventional momentum-spin (k-s) coupling paradigm. Here we demonstrate an unexpected manifestation of one-dimensional (1D) r-s coupling in two-dimensional (2D) altermagnetic second-order topological insulators, where the spin-split floating edge states -- energetically isolated within the bulk band gap -- emerge and exhibit both Neel-vector-dependent and electrically tunable behaviors. The 1D edge-spin r-s coupling ensures carrier transport to be exclusively carried by the edge states with quantized spin conductance, giving rise to an unconventional edge tunnel magnetoresistance (edge-TMR) effect that can be switched On or Off. As a proof of concept, we computationally design an edge-TMR device based on Cr_2Se_2O monolayer to demonstrate its edge transportation and controllability via the Néel order or electric field. Our findings propose a general prototype altermagnetic device for next-generation low-dimensional spintronics. △ Less

Submitted 1 June, 2026; v1 submitted 14 August, 2025; originally announced August 2025.

Comments: Published in Phys. Rev. B 113, 224407 (2026)

Journal ref: Phys. Rev. B 113, 224407 (2026)

Computational Design of Two-Dimensional MoSi$_2$N$_4$ Family Field-Effect Transistor for Future Ångström-Scale CMOS Technology Nodes

Authors: Che Chen Tho, Zongmeng Yang, Shibo Fang, Shiying Guo, Liemao Cao, Chit Siong Lau, Fei Liu, Shengli Zhang, Jing Lu, L. K. Ang, Lain-Jong Li, Yee Sin Ang

Abstract: Advancing complementary metal-oxide-semiconductor (CMOS) technology into the sub-1-nm angström-scale technology nodes is expected to involve alternative semiconductor channel materials, as silicon transistors encounter severe performance degradation at physical gate lengths below 10 nm. Two-dimensional (2D) semiconductors have emerged as strong candidates for overcoming short-channel effects due t… ▽ More Advancing complementary metal-oxide-semiconductor (CMOS) technology into the sub-1-nm angström-scale technology nodes is expected to involve alternative semiconductor channel materials, as silicon transistors encounter severe performance degradation at physical gate lengths below 10 nm. Two-dimensional (2D) semiconductors have emerged as strong candidates for overcoming short-channel effects due to their atomically thin bodies, which inherently suppress electrostatic leakage and improve gate control in aggressively scaled field-effect transistors (FETs). Among the growing library of 2D materials, the MoSi$_2$N$_4$ family -- a synthetic septuple-layered materials -- has attracted increasing attention for its remarkable ambient stability, suitable bandgaps, and favorable carrier transport characteristics, making it a promising platform for next-generation transistors. While experimental realization of sub-10-nm 2D FETs remains technologically demanding, computational device simulation using first-principles density functional theory combined with nonequilibrium Green's function transport simulations provide a powerful and cost-effective route for exploring the performance limits and optimal design of ultrascaled FET. This review consolidates the current progress in the computational design of MoSi$_2$N$_4$ family FETs. We review the physical properties of MoSi$_2$N$_4$ that makes them compelling candidates for transistor applications, as well as the simulated device performance and optimization strategy of MoSi$_2$N$_4$ family FETs. Finally, we identify key challenges and research gaps, and outline future directions that could accelerate the practical deployment of MoSi$_2$N$_4$ family FET in the angström-scale CMOS era. △ Less

Submitted 26 June, 2025; originally announced June 2025.

Comments: 27 pages, 11 figures

STI-SNN: A 0.14 GOPS/W/PE Single-Timestep Inference FPGA-based SNN Accelerator with Algorithm and Hardware Co-Design

Authors: Kainan Wang, Chengyi Yang, Chengting Yu, Yee Sin Ang, Bo Wang, Aili Wang

Abstract: Brain-inspired Spiking Neural Networks (SNNs) have attracted attention for their event-driven characteristics and high energy efficiency. However, the temporal dependency and irregularity of spikes present significant challenges for hardware parallel processing and data reuse, leading to some existing accelerators falling short in processing latency and energy efficiency. To overcome these challen… ▽ More Brain-inspired Spiking Neural Networks (SNNs) have attracted attention for their event-driven characteristics and high energy efficiency. However, the temporal dependency and irregularity of spikes present significant challenges for hardware parallel processing and data reuse, leading to some existing accelerators falling short in processing latency and energy efficiency. To overcome these challenges, we introduce the STI-SNN accelerator, designed for resource-constrained applications with high energy efficiency, flexibility, and low latency. The accelerator is designed through algorithm and hardware co-design. Firstly, STI-SNN can perform inference in a single timestep. At the algorithm level, we introduce a temporal pruning approach based on the temporal efficient training (TET) loss function. This approach alleviates spike disappearance during timestep reduction, maintains inference accuracy, and expands TET's application. In hardware design, we analyze data access patterns and adopt the output stationary (OS) dataflow, eliminating the need to store membrane potentials and access memory operations. Furthermore, based on the OS dataflow, we propose a compressed and sorted representation of spikes, then cached in the line buffer to reduce the memory access cost and improve reuse efficiency. Secondly, STI-SNN supports different convolution methods. By adjusting the computation mode of processing elements (PEs) and parameterizing the computation array, STI-SNN can accommodate lightweight models based on depthwise separable convolutions (DSCs), further enhancing hardware flexibility. Lastly, STI-SNN also supports both inter-layer and intra-layer parallel processing. For inter-layer parallelism, we ... △ Less

Submitted 10 June, 2025; originally announced June 2025.

Pressure-Driven Metallicity in Ångström-Thickness 2D Bismuth and Layer-Selective Ohmic Contact to MoS2

Authors: Shuhua Wang, Shibo Fang, Qiang Li, Yunliang Yue, Zongmeng Yang, Xiaotian Sun, Jing Lu, Chit Siong Lau, L. K. Ang, Lain-Jong Li, Yee Sin Ang

Abstract: Recent fabrication of two-dimensional (2D) metallic bismuth (Bi) via van der Waals (vdW) squeezing method opens a new avenue to ultrascaling metallic materials into the ångström-thickness regime [Nature 639, 354 (2025)]. However, freestanding 2D Bi is typically known to exhibit a semiconducting phase [Nature 617, 67 (2023), Phys. Rev. Lett. 131, 236801 (2023)], which contradicts with the experimen… ▽ More Recent fabrication of two-dimensional (2D) metallic bismuth (Bi) via van der Waals (vdW) squeezing method opens a new avenue to ultrascaling metallic materials into the ångström-thickness regime [Nature 639, 354 (2025)]. However, freestanding 2D Bi is typically known to exhibit a semiconducting phase [Nature 617, 67 (2023), Phys. Rev. Lett. 131, 236801 (2023)], which contradicts with the experimentally observed metallicity in vdW-squeezed 2D Bi. Here we show that such discrepancy originates from the pressure-induced buckled-to-flat structural transition in 2D Bi, which changes the electronic structure from semiconducting to metallic phases. Based on the experimentally fabricated MoS2-Bi-MoS2 trilayer heterostructure, we demonstrate the concept of layer-selective Ohmic contact in which one MoS2 layer forms Ohmic contact to the sandwiched Bi monolayer while the opposite MoS2 layer exhibits a Schottky barrier. The Ohmic contact can be switched between the two sandwiching MoS2 monolayers by changing the polarity of an external gate field, thus enabling charge to be spatially injected into different MoS2 layers. The layer-selective Ohmic contact proposed here represents a layertronic generalization of metal/semiconductor contact, paving a way towards layertronic device application. △ Less

Submitted 25 June, 2025; v1 submitted 5 June, 2025; originally announced June 2025.

Comments: 14 pages, 5 figures

Many-body critical non-Hermitian skin effect

Authors: Yi Qin, Yee Sin Ang, Ching Hua Lee, Linhu Li

Abstract: Criticality in non-Hermitian systems unveils unique phase transitions and scaling behaviors beyond Hermitian paradigms, offering new insights into the interplay between gain/loss, non-reciprocity, and complex energy spectra. In this paper, we uncover a new class of many-body critical non-Hermitian skin effect (CSE) originating from the interplay between multiple non-Hermitian pumping channels and… ▽ More Criticality in non-Hermitian systems unveils unique phase transitions and scaling behaviors beyond Hermitian paradigms, offering new insights into the interplay between gain/loss, non-reciprocity, and complex energy spectra. In this paper, we uncover a new class of many-body critical non-Hermitian skin effect (CSE) originating from the interplay between multiple non-Hermitian pumping channels and Hubbard interactions. In particular, criticality in the real-to-complex transitions can selectively emerge within the subspace of bound states or scattering states, as well as their interacting admixtures. These mechanisms possess no single-particle analog and can be diagnosed through a specially defined correlation function. As more particles are involved, higher-order CSEs naturally arise, with greatly enhanced effective coupling strengths and hence greater experimental accessibility. Our results reveal an enriched landscape of non-Hermitian critical phenomena in interacting many-body systems, and pave the way for investigating unconventional non-Hermitian criticality in the context of various interaction-induced particle clustering configurations. △ Less

Submitted 2 June, 2025; originally announced June 2025.

Comments: 16 pages, 12 figures

Journal ref: Communications Physics 9, 16 (2026)

Ferroelastic Altermagnetism

Authors: Rui Peng, Shibo Fang, Pin Ho, Tong Zhou, Junwei Liu, Yee Sin Ang

Abstract: Synergizing altermagnetism and other ferroic orders, such as ferroelectric switchable altermagnetism [Phys. Rev. Lett. 134, 106801 (2025) and ibid. 106802 (2025)], offers an effective route to achieve nonvolatile switching of altermagnetic spin splitting. In this work, by synergizing altermagnetism and ferroelasticity, we propose the concept of ferroelastic altermagnets in which the ferroelastic c… ▽ More Synergizing altermagnetism and other ferroic orders, such as ferroelectric switchable altermagnetism [Phys. Rev. Lett. 134, 106801 (2025) and ibid. 106802 (2025)], offers an effective route to achieve nonvolatile switching of altermagnetic spin splitting. In this work, by synergizing altermagnetism and ferroelasticity, we propose the concept of ferroelastic altermagnets in which the ferroelastic crystal reorientation can drive multistate nonvolatile switching of the altermagnetic spin splitting via altermagnetoelastic effect. Using monolayers RuF4 and CuF2 as material candidates, we demonstrate 2-state and 3-state altermagnetic spin splitting switching as driven by ferroelastic strain states. Transport calculation shows that multistate spin conductivities can be ferroelastically encoded in an ferroelastic altermagnet, thus suggesting the potential of ferroelastic altermagnetic as nonvolatile nanomechanical spin switches. The proposed concept of ferroelastic altermagnetism enriches the emerging landscape of multiferroic altermagnetism, paving a way towards altermagnetic-based straintronic device applications. △ Less

Submitted 12 July, 2025; v1 submitted 27 May, 2025; originally announced May 2025.

Comments: 16 pages, 4 figures

Unconventional tunnel magnetoresistance scaling with altermagnets

Authors: Zongmeng Yang, Xingyue Yang, Jianhua Wang, Qiang Li, Rui Peng, Ching Hua Lee, Lay Kee Ang, Jing Lu, Yee Sin Ang, Shibo Fang

Abstract: In conventional magnetic tunnel junctions (MTJs), the tunnel magnetoresistance (TMR) typically increases with barrier thickness as electron transmission in the antiparallel configuration decays faster than that of the parallel configuration. In this work, we reveal an anomalous scaling effect in altermagnetic tunnel junctions (AMTJs), where the TMR decreases anomalously with an increasing barrier… ▽ More In conventional magnetic tunnel junctions (MTJs), the tunnel magnetoresistance (TMR) typically increases with barrier thickness as electron transmission in the antiparallel configuration decays faster than that of the parallel configuration. In this work, we reveal an anomalous scaling effect in altermagnetic tunnel junctions (AMTJs), where the TMR decreases anomalously with an increasing barrier thickness. The anomalous scaling originates from the overlapping spin-split branches forming a transmission path that cannot be suppressed in the antiparallel state. Such phenomenon is explained by a double-barrier model and is further demonstrated using ab initio quantum transport simulations in 2D V2Te2O/Cr2Se2O/V2Te2O and V2Te2O/ZnSe/V2Te2O AMTJs. Our work identifies a peculiar unexpected transport characteristic of AMTJ, providing a fundamental limit on AMTJ device design and illustrating the potential optimal design of AMTJ at the ultrascaled monolayer limit. △ Less

Submitted 15 September, 2025; v1 submitted 22 May, 2025; originally announced May 2025.

Valley Gapless Semiconductor: Models and Applications

Authors: Kok Wai Lee, Pei-Hao Fu, Jun-Feng Liu, Ching Hua Lee, Yee Sin Ang

Abstract: The emerging field of valleytronics harnesses the valley degree of freedom of electrons, akin to how electronic and spintronic devices utilize the charge and spin degrees of freedom of electrons respectively. The engineering of valleytronic devices typically relies on the coupling between valley and other degrees of freedom such as spin, giving rise to valley-spintronics where an external magnetic… ▽ More The emerging field of valleytronics harnesses the valley degree of freedom of electrons, akin to how electronic and spintronic devices utilize the charge and spin degrees of freedom of electrons respectively. The engineering of valleytronic devices typically relies on the coupling between valley and other degrees of freedom such as spin, giving rise to valley-spintronics where an external magnetic field manipulates the information stored in valleys. Here, the valley gapless semiconductor is proposed as a potential electrically controlled valleytronic platform because the valley degree of freedom is coupled to the carrier type, i.e., electrons and holes. The valley degree of freedom can be electrically controlled by tuning the carrier type via the device gate voltage. We demonstrate the proposal for realizing a valley gapless semiconductor in the honeycomb lattice with the Haldane and modified Haldane models. The system's valley-carrier coupling is further studied for its transport properties in an all-electrically controlled valley filter device setting. Our work highlights the significance of the valley gapless semiconductor for valleytronic devices. △ Less

Submitted 24 May, 2025; v1 submitted 4 February, 2025; originally announced February 2025.

Comments: 13 pages, 3 figures

Zero-Dipole Schottky Contact: Homologous Metal Contact to 2D Semiconductor

Authors: Che Chen Tho, Yee Sin Ang

Abstract: Band alignment of metal contacts to 2D semiconductors often deviate from the ideal Shottky-Mott (SM) rule due to the non-ideal factors such as the formation of interface dipole and metal-induced gap states (MIGS). Although MIGS can be strongly suppressed using van der Waals (vdW) contact engineering, the interface dipole is hard to eliminate due to the electronegativity difference of the two conta… ▽ More Band alignment of metal contacts to 2D semiconductors often deviate from the ideal Shottky-Mott (SM) rule due to the non-ideal factors such as the formation of interface dipole and metal-induced gap states (MIGS). Although MIGS can be strongly suppressed using van der Waals (vdW) contact engineering, the interface dipole is hard to eliminate due to the electronegativity difference of the two contacting materials. Here we show that interface dipole can be practically eliminated in 2D semiconducting MoSi$_2$N$_4$ when contacted by its homologous metallic counterpart MoSi$_2$N$_4$(MoN)$_n$ ($n = 1-4$). The SiN outer sublayers, simultaneously present in both MoSi$_2$N$_4$ and MoSi$_2$N$_4$(MoN)$_n$, creates nearly equal charge `push-back' effect at the contact interface. This nearly symmetrical charge redistribution leads to zero net electron transfer across the interface, resulting in a \emph{zero-dipole} contact. Intriguingly, we show that even in the extreme close-contact case where MoSi$_2$N$_4$(MoN) is arbitrarily pushed towards MoSi$_2$N$_4$ with extremely small interlayer distance, the interface dipole remains practically zero. Such \emph{zero-dipole} Schottky contact represents a peculiar case where the SM rule, usually expected to occur only in the non-interacting regime, manifests in MoSi$_2$N$_4$/MoSi$_2$N$_4$(MoN)$_n$ vdWH even though the constituent monolayers interact strongly. A model for pressure sensing is then proposed based on changing the interlayer distance in MoSi$_2$N$_4$/MoSi$_2$N$_4$(MoN) vdWH. △ Less

Submitted 5 November, 2024; originally announced November 2024.

Toward Phonon-Limited Transport in Two-Dimensional Electronics by Oxygen-Free Fabrication

Authors: Subhrajit Mukherjee, Shuhua Wang, Dasari Venkatakrishnarao, Yaoju Tarn, Teymour Talha-Dean, Rainer Lee, Ivan A. Verzhbitskiy, Ding Huang, Abhishek Mishra, John Wellington John, Sarthak Das, Fabio Bussoloti, Thathsara D. Maddumapatabandi, Yee Wen Teh, Yee Sin Ang, Kuan Eng Johnson Goh, Chit Siong Lau

Abstract: Future electronics require aggressive scaling of channel material thickness while maintaining device performance. Two-dimensional (2D) semiconductors are promising candidates, but despite over two decades of research, experimental performance still lags theoretical expectations. Here, we develop an oxygen-free approach to push the electrical transport of 2D field-effect transistors toward the theo… ▽ More Future electronics require aggressive scaling of channel material thickness while maintaining device performance. Two-dimensional (2D) semiconductors are promising candidates, but despite over two decades of research, experimental performance still lags theoretical expectations. Here, we develop an oxygen-free approach to push the electrical transport of 2D field-effect transistors toward the theoretical phonon-limited intrinsic mobility. We achieve record carrier mobilities of 91 (132) cm2V-1s-1 for mono- (bi-) layer MoS2 transistors on SiO2 substrate. Statistics from over 60 devices confirm that oxygen-free fabrication enhances key figures of merit by more than an order of magnitude. While previous studies suggest that 2D transition metal dichalcogenides such as MoS2 and WS2 are stable in air, we show that short-term ambient exposure can degrade their device performance through irreversible oxygen chemisorption. This study emphasizes the criticality of avoiding oxygen exposure, offering guidance for device manufacturing for fundamental research and practical applications of 2D materials. △ Less

Submitted 12 September, 2024; originally announced September 2024.

Ab Initio Device-Driven Screening of Sub-1-nm Thickness Oxide Semiconductors for Future CMOS Technology Nodes

Authors: Linqiang Xu, Yue Hu, Lianqiang Xu, Lin Xu, Qiuhui Li, Aili Wang, Chit Siong Lau, Jing Lu, Yee Sin Ang

Abstract: Ultrathin oxide semiconductors with sub-1-nm thickness are promising building blocks for ultrascaled field-effect transistor (FET) applications due to their resilience against short-channel effects, high air stability, and potential for low-energy device operation. However, the n-type dominance of ultrathin oxide FET has hindered their integration into complementary metal-oxide-semiconductor (CMOS… ▽ More Ultrathin oxide semiconductors with sub-1-nm thickness are promising building blocks for ultrascaled field-effect transistor (FET) applications due to their resilience against short-channel effects, high air stability, and potential for low-energy device operation. However, the n-type dominance of ultrathin oxide FET has hindered their integration into complementary metal-oxide-semiconductor (CMOS) technology, which requires both n-and p-type devices. Here we develop an ab initio device-driven computational screening workflow to identify sub-1-nm thickness oxide semiconductors for sub-5-nm FET applications. We demonstrate that ultrathin CaO2, CaO, and SrO are compatible with p-type device operations under both high-performance (HP) and low-power (LP) requirements specified by the International Technology Roadmap of Semiconductors (ITRS), thereby expanding the limited family of p-type oxide semiconductors. Notably, CaO and SrO emerge as the first-of-kind sub-1-nm thickness oxide semiconductors capable of simultaneously meeting the ITRS HP and LP criteria for both n-and p-type devices. CaO and SrO FETs outperform many existing low-dimensional semiconductors, exhibiting scalability below 5-nm gate length. Our findings offer a pioneering effort in the ab initio, device-driven screening of sub-1-nm thickness oxide semiconductors, significantly broadening the material candidate pool for future CMOS technology nodes. △ Less

Submitted 12 September, 2024; originally announced September 2024.

Comments: 23 pages, 5 figures, 1 table

All-Electrical Layer-Spintronics in Altermagnetic Bilayer

Authors: Rui Peng, Jin Yang, Lin Hu, Wee-Liat Ong, Pin Ho, Chit Siong Lau, Junwei Liu, Yee Sin Ang

Abstract: Electrical manipulation of spin-polarized current is highly desirable yet tremendously challenging in developing ultracompact spintronic device technology. Here we propose a scheme to realize the all-electrical manipulation of spin-polarized current in an altermagnetic bilayer. Such a bilayer system can host layer-spin locking, in which one layer hosts a spin-polarized current while the other laye… ▽ More Electrical manipulation of spin-polarized current is highly desirable yet tremendously challenging in developing ultracompact spintronic device technology. Here we propose a scheme to realize the all-electrical manipulation of spin-polarized current in an altermagnetic bilayer. Such a bilayer system can host layer-spin locking, in which one layer hosts a spin-polarized current while the other layer hosts a current with opposite spin polarization. An out-of-plane electric field breaks the layer degeneracy, leading to a gate-tunable spin-polarized current whose polarization can be fully reversed upon flipping the polarity of the electric field. Using first-principles calculations, we show that CrS bilayer with C-type antiferromagnetic exchange interaction exhibits a hidden layer-spin locking mechanism that enables the spin polarization of the transport current to be electrically manipulated via the layer degree of freedom. We demonstrate that sign-reversible spin polarization as high as 87% can be achieved at room temperature. This work presents the pioneering concept of layer-spintronics which synergizes altermagnetism and bilayer stacking to achieve efficient electrical control of spin. △ Less

Submitted 18 September, 2024; v1 submitted 22 August, 2024; originally announced August 2024.

Comments: 20 pages, 5 figures

Bilayer TeO2: The First Oxide Semiconductor with Symmetric Sub-5-nm NMOS and PMOS

Authors: Linqiang Xu, Liya Zhao, Chit Siong Lau, Pan Zhang, Lianqiang Xu, Qiuhui Li, Shibo Fang, Yee Sin Ang, Xiaotian Sun, Jing Lu

Abstract: Wide bandgap oxide semiconductors are very promising channel candidates for next-generation electronics due to their large-area manufacturing, high-quality dielectrics, low contact resistance, and low leakage current. However, the absence of ultra-short gate length (Lg) p-type transistors has restricted their application in future complementary metal-oxide-semiconductor (CMOS) integration. Inspire… ▽ More Wide bandgap oxide semiconductors are very promising channel candidates for next-generation electronics due to their large-area manufacturing, high-quality dielectrics, low contact resistance, and low leakage current. However, the absence of ultra-short gate length (Lg) p-type transistors has restricted their application in future complementary metal-oxide-semiconductor (CMOS) integration. Inspired by the successfully grown high-hole mobility bilayer (BL) beta tellurium dioxide (\b{eta}-TeO2), we investigate the performance of sub-5-nm-Lg BL \b{eta}-TeO2 field-effect transistors (FETs) by utilizing first-principles quantum transport simulation. The distinctive anisotropy of BL \b{eta}-TeO2 yields different transport properties. In the y-direction, both the sub-5-nm-Lg n-type and p-type BL \b{eta}-TeO2 FETs can fulfill the International Technology Roadmap for Semiconductors (ITRS) criteria for high-performance (HP) devices, which are superior to the reported oxide FETs (only n-type). Remarkably, we for the first time demonstrate the existence of the NMOS and PMOS symmetry in sub-5-nm-Lg oxide semiconductor FETs. As to the x-direction, the n-type BL \b{eta}-TeO2 FETs satisfy both the ITRS HP and low-power (LP) requirements with Lg down to 3 nm. Consequently, our work shed light on the tremendous prospects of BL \b{eta}-TeO2 for CMOS application. △ Less

Submitted 14 August, 2024; originally announced August 2024.

Symmetric n-and p-Type Sub-5-nm 1D Graphene Nanoribbon Transistors for Homogeneous CMOS Applications

Authors: Linqiang Xu, Shiqi Liu, Qiuhui Li, Ying Li, Shibo Fang, Ying Guo, Yee Sin Ang, Chen Yang, Jing Lu

Abstract: Graphene nanoribbon (GNR) emerges as an exceptionally promising channel candidate due to its tunable sizable bandgap (0-3 eV), ultrahigh carrier mobility (up to 4600 cm^(2) V^(-1) s^(-1)), and excellent device performance (current on-off ratio of 10^(7)). However, the asymmetry of reported n-type and p-type GNR field-effect transistors (FETs) at ultrashort gate length (Lg) has become an obstacle t… ▽ More Graphene nanoribbon (GNR) emerges as an exceptionally promising channel candidate due to its tunable sizable bandgap (0-3 eV), ultrahigh carrier mobility (up to 4600 cm^(2) V^(-1) s^(-1)), and excellent device performance (current on-off ratio of 10^(7)). However, the asymmetry of reported n-type and p-type GNR field-effect transistors (FETs) at ultrashort gate length (Lg) has become an obstacle to future complementary metal-oxide-semiconductor (CMOS) integration. Here, we conduct ab initio quantum transport simulations to investigate the transport properties of sub-5-nm Lg 7 armchair-edge GNR (7 AGNR) FETs. The on-state current, delay time, and power dissipation of the n-type and p-type 7 AGNR FETs fulfill the International Technology Roadmap for Semiconductors targets for high-performance devices when Lg is reduced to 3 nm. Remarkably, the 7 AGNR FETs exhibit superior n-type and p-type symmetry to the 7-9-7 AGNR FETs due to the more symmetrical electron/hole effective masses. Compared to the monolayer MoS2 and MoTe2 counterparts, the 7 AGNR FETs have better device performance, which could be further improved via gate engineering. Our results shed light on the immense potential of 7 AGNR in advancing CMOS electronics beyond silicon. △ Less

Submitted 14 August, 2024; originally announced August 2024.

Two-dimensional Weyl nodal-line semimetal and antihelical edge states in a modified Kane-Mele model

Authors: Xiaokang Dai, Pei-Hao Fu, Yee Sin Ang, Qinjun Chen

Abstract: The Kane-Mele model has been modified to achieve versatile topological phases. Previous work [Phys. Rev. Lett. 120, 156402 (2018)] introduced a staggered intrinsic spin-orbit coupling effect to generate pseudohelical edge states, with Rashba spin-orbit coupling facilitating spin flips in alternating sublattices. Our study demonstrates that, in the absence of Rashba spin-orbit coupling, the modifie… ▽ More The Kane-Mele model has been modified to achieve versatile topological phases. Previous work [Phys. Rev. Lett. 120, 156402 (2018)] introduced a staggered intrinsic spin-orbit coupling effect to generate pseudohelical edge states, with Rashba spin-orbit coupling facilitating spin flips in alternating sublattices. Our study demonstrates that, in the absence of Rashba spin-orbit coupling, the modified Kane-Mele model with staggered intrinsic spin-orbit coupling evolves into a $Z_{2}$ class topological metal, specifically a two-dimensional Weyl nodal-line semimetal. In a nanoribbon geometry, we predict the emergence of antihelical edge states, which support spin-polarized currents flowing in the same direction along parallel boundaries. Unlike pseudohelical edge states, antihelical edge states can be viewed as a superposition of two antichiral edge states related by time-reversal symmetry. However, the spin Hall conductance from antihelical edge states is not quantized due to the presence of gapless bulk states. Additionally, we examine the robustness of helical, pseudohelical, and antihelical edge states in the presence of nonmagnetic disorders, highlighting the particular fragility of antihelical edge states. Our findings enhance the understanding of the modified Kane-Mele model, providing new insights into its topological properties. △ Less

Submitted 11 August, 2024; v1 submitted 8 August, 2024; originally announced August 2024.

Comments: 10 pages, 8 figures

Floquet engineering of topological phase transitions in quantum spin Hall $α$-$T_{3}$ system

Authors: Kok Wai Lee, Mateo Jalen Andrew Calderon, Xiang-Long Yu, Ching Hua Lee, Yee Sin Ang, Pei-Hao Fu

Abstract: Floquet engineering of topological phase transitions driven by a high-frequency time-periodic field is a promising approach to realizing new topological phases of matter distinct from static states. Here, we theoretically investigate Floquet engineering topological phase transitions in the quantum spin Hall $α$-$T_{3}$ system driven by an off-resonant circularly polarized light. In addition to the… ▽ More Floquet engineering of topological phase transitions driven by a high-frequency time-periodic field is a promising approach to realizing new topological phases of matter distinct from static states. Here, we theoretically investigate Floquet engineering topological phase transitions in the quantum spin Hall $α$-$T_{3}$ system driven by an off-resonant circularly polarized light. In addition to the quantum spin (anomalous) Hall insulator phase with multiple helical (chiral) edge states, spin-polarized topological metallic phases are observed, where the bulk topological band gap of one spin sub-band overlaps with the other gapless spin sub-band. Moreover, with a staggered potential, the topological invariants of the system depend on whether the middle band is occupied because of the breaking of symmetry with respect to the center of energy-momentum plane. Our work highlights the significance of Floquet engineering in realizing new topological phases in $α$-$T_{3}$ lattices. △ Less

Submitted 4 December, 2024; v1 submitted 4 August, 2024; originally announced August 2024.

Comments: 12 pages, 6 figures

Small exciton effective mass in QL Bi2Se2Te: A material platform towards high-temperature excitonic condensate

Authors: Yuanyuan Wang, Ying Dai, Baibiao Huang, Yee Sin Ang, Wei Wei

Abstract: Using first-principles simulations combined with many-body calculations, we show that two-dimensional free-standing quintuple-layer Bi2Se2Te is an inversion symmetric monolayer expected to achieve spatially indirect exciton with large exciton radius, small exciton effective mass and long exciton lifetime. Such system is theoretically predicted to be a promising platform for realizing excitonic Bos… ▽ More Using first-principles simulations combined with many-body calculations, we show that two-dimensional free-standing quintuple-layer Bi2Se2Te is an inversion symmetric monolayer expected to achieve spatially indirect exciton with large exciton radius, small exciton effective mass and long exciton lifetime. Such system is theoretically predicted to be a promising platform for realizing excitonic Bose-Einstein condensation and superfluid due to its high phase transition temperatures of ~257 K and ~64.25 K for the BEC and excitonic superfluid, respectively. The importance of spin-orbit coupling is revealed, and the angular momentum selection rules for photon absorption are discussed. This finding suggests the potential of QL Bi2Se2Te monolayer with exotic bosonic bound states provides as a tantalizing high-temperature platform to probe excitonic physics. △ Less

Submitted 16 July, 2024; originally announced July 2024.

Transverse Cooper-Pair Rectifier

Authors: Pei-Hao Fu, Yong Xu, Jun-Feng Liu, Ching Hua Lee, Yee Sin Ang

Abstract: Non-reciprocal devices are key components in modern electronics covering broad applications ranging from transistors to logic circuits thanks to the output rectified signal in the direction parallel to the input. In this work, we propose a transverse Cooper-pair rectifier in which a non-reciprocal current is perpendicular to the driving field, when inversion, time reversal, and mirror symmetries a… ▽ More Non-reciprocal devices are key components in modern electronics covering broad applications ranging from transistors to logic circuits thanks to the output rectified signal in the direction parallel to the input. In this work, we propose a transverse Cooper-pair rectifier in which a non-reciprocal current is perpendicular to the driving field, when inversion, time reversal, and mirror symmetries are broken simultaneously. The Blonder-Tinkham-Klapwijk formalism is developed to describe the transverse current-voltage relation in a normal-metal/superconductor tunneling junction, where symmetry constraints are achieved by an effective built-in supercurrent manifesting in an asymmetric and anisotropic Andreev reflection. The asymmetry in the Andreev reflection is induced when inversion and time reversal symmetry are broken by the supercurrent component parallel to the junction while the anisotropy occurs when the mirror symmetry with respect to the normal of the junction interface is broken by the perpendicular supercurrent component to the junction. Compared to the conventional longitudinal one, the transverse rectifier supports fully polarized diode efficiency and colossal nonreciprocal conductance rectification, completely decoupling the path of the input excitation from the output rectified signal. This work provides a formalism for realizing transverse non-reciprocity in superconducting junctions, which is expected to be achieved by modifying current experimental setups and may pave the way for future low-dissipation superconducting electronics. △ Less

Submitted 7 October, 2024; v1 submitted 7 May, 2024; originally announced May 2024.

Comments: 9 + 13 pages, 3 + 6 figures

Strongly correlated multi-electron bunches from interaction with quantum light

Authors: Suraj Kumar, Jeremy Lim, Nicholas Rivera, Wesley Wong, Yee Sin Ang, Lay Kee Ang, Liang Jie Wong

Abstract: Strongly correlated electron systems are a cornerstone of modern physics, being responsible for groundbreaking phenomena from superconducting magnets to quantum computing. In most cases, correlations in electrons arise exclusively due to Coulomb interactions. In this work, we reveal that free electrons interacting simultaneously with a light field can become highly correlated via mechanisms beyond… ▽ More Strongly correlated electron systems are a cornerstone of modern physics, being responsible for groundbreaking phenomena from superconducting magnets to quantum computing. In most cases, correlations in electrons arise exclusively due to Coulomb interactions. In this work, we reveal that free electrons interacting simultaneously with a light field can become highly correlated via mechanisms beyond Coulomb interactions. In the case of two electrons, the resulting Pearson correlation coefficient (PCC) for the joint probability distribution of the output electron energies is enhanced over 13 orders of magnitude compared to that of electrons interacting with the light field in succession (one after another). These highly correlated electrons are the result of momentum and energy exchange between the participating electrons via the external quantum light field. Our findings pave the way to the creation and control of highly correlated free electrons for applications including quantum information and ultra-fast imaging. △ Less

Submitted 13 May, 2024; v1 submitted 23 April, 2024; originally announced April 2024.

Comments: 3 figures for Main Text, 4 figures for Supplementary Materials, Supplementary is available at end of Main Text figures

Nano-ironing van der Waals Heterostructures Towards Electrically Controlled Quantum Dots

Authors: Teymour Talha-Dean, Yaoju Tarn, Subhrajit Mukherjee, John Wellington John, Ding Huang, Ivan A. Verzhbitskiy, Dasari Venkatakrishnarao, Sarthak Das, Rainer Lee, Abhishek Mishra, Shuhua Wang, Yee Sin Ang, Kuan Eng Johnson Goh, Chit Siong Lau

Abstract: Assembling two-dimensional van der Waals layered materials into heterostructures is an exciting development that sparked the discovery of rich correlated electronic phenomena and offers possibilities for designer device applications. However, resist residue from fabrication processes is a major limitation. Resulting disordered interfaces degrade device performance and mask underlying transport phy… ▽ More Assembling two-dimensional van der Waals layered materials into heterostructures is an exciting development that sparked the discovery of rich correlated electronic phenomena and offers possibilities for designer device applications. However, resist residue from fabrication processes is a major limitation. Resulting disordered interfaces degrade device performance and mask underlying transport physics. Conventional cleaning processes are inefficient and can cause material and device damage. Here, we show that thermal scanning probe based cleaning can effectively eliminate resist residue to recover pristine material surfaces. Our technique is compatible at both the material- and device-level, and we demonstrate the significant improvement in the electrical performance of 2D WS2 transistors. We also demonstrate the cleaning of van der Waals heterostructures to achieve interfaces with low disorder. This enables the electrical formation and control of quantum dots that can be tuned from macroscopic current flow to the single-electron tunnelling regime. Such material processing advances are crucial for constructing high-quality vdW heterostructures that are important platforms for fundamental studies and building blocks for quantum and nano-electronics applications. △ Less

Submitted 2 February, 2024; originally announced February 2024.

Comments: 4 Figures

Electric-filed tuned anomalous valley Hall effect in A-type hexagonal antiferromagnetic monolayer

Authors: San-Dong Guo, Yu-Ling Tao, Zi-Yang Zhuo, Gangqiang Zhu, Yee Sin Ang

Abstract: The combination of antiferromagnetic (AFM) spintronics and anomalous valley Hall effect (AVHE) is of great significance for potential applications in valleytronics. Here, we propose a design principle for achieving AVHE in A-type hexagonal AFM monolayer. The design principle involves the introduction of layer-dependent electrostatic potential caused by out-of-plane external electric field, which c… ▽ More The combination of antiferromagnetic (AFM) spintronics and anomalous valley Hall effect (AVHE) is of great significance for potential applications in valleytronics. Here, we propose a design principle for achieving AVHE in A-type hexagonal AFM monolayer. The design principle involves the introduction of layer-dependent electrostatic potential caused by out-of-plane external electric field, which can break the combined symmetry ($PT$ symmetry) of spatial inversion ($P$) and time reversal ($T$), producing spin splitting. The spin order of spin splitting can be reversed by regulating the direction of electric field. Based on first-principles calculations, the design principle can be verified in AFM $\mathrm{Cr_2CH_2}$. The layer-locked hidden Berry curvature can give rise to layer-Hall effect, including valley layer-spin Hall effect and layer-locked AVHE. Our works provide an experimentally feasible way to realize AVHE in AFM monolayer. △ Less

Submitted 12 December, 2023; originally announced December 2023.

Comments: 5 pages,6 figures

Shared Dynamically-Small Points for Polynomials on Average

Authors: Yan Sheng Ang, Jit Wu Yap

Abstract: Given two rational maps $f,g: \mathbb{P}^1 \to \mathbb{P}^1$ of degree $d$ over $\mathbb{C}$, DeMarco-Krieger-Ye [DKY22] has conjectured that there should be a uniform bound $B = B(d) > 0$ such that either they have at most $B$ common preperiodic points or they have the same set of preperiodic points. We study their conjecture from a statistical perspective and prove that the average number of sha… ▽ More Given two rational maps $f,g: \mathbb{P}^1 \to \mathbb{P}^1$ of degree $d$ over $\mathbb{C}$, DeMarco-Krieger-Ye [DKY22] has conjectured that there should be a uniform bound $B = B(d) > 0$ such that either they have at most $B$ common preperiodic points or they have the same set of preperiodic points. We study their conjecture from a statistical perspective and prove that the average number of shared preperiodic points is zero for monic polynomials of degree $d \geq 6$ with rational coefficients. We also investigate the quantity $\liminf_{x \in \overline{\mathbb{Q}}} \left(\widehat{h}_f(x) + \widehat{h}_g(x) \right)$ for a generic pair of polynomials and prove both lower and upper bounds for it. △ Less

Submitted 8 December, 2023; originally announced December 2023.

Comments: Comments welcome!

Interplay between Haldane and modified Haldane models in $α$-$T_{3}$ lattice: Band structures, phase diagrams and edge states

Authors: Kok Wai Lee, Pei-Hao Fu, Yee Sin Ang

Abstract: We study the topological properties of the Haldane and modified Haldane models in $α$-$T_{3}$ lattice. The band structures and phase diagrams of the system are investigated. Individually, each model undergoes a distinct phase transition: (i) the Haldane-only model experiences a topological phase transition from the Chern insulator ($\mathcal{C} = 1$) phase to the higher Chern insulator (… ▽ More We study the topological properties of the Haldane and modified Haldane models in $α$-$T_{3}$ lattice. The band structures and phase diagrams of the system are investigated. Individually, each model undergoes a distinct phase transition: (i) the Haldane-only model experiences a topological phase transition from the Chern insulator ($\mathcal{C} = 1$) phase to the higher Chern insulator ($\mathcal{C} = 2$) phase; while (ii) the modified-Haldane-only model experiences a phase transition from the topological metal ($\mathcal{C} = 2$) phase to the higher Chern insulator ($\mathcal{C} = 2$) phase and we show that $\mathcal{C}$ is insufficient to characterize this system because $\mathcal{C}$ remains unchanged before and after the phase transition. By plotting the Chern number and $\mathcal{C}$ phase diagram, we show that in the presence of both Haldane and modified Haldane models in the $α$-$T_{3}$ lattice, the interplay between the two models manifests three distinct topological phases, namely the $\mathcal{C} = 1$ Chern insulator (CI) phase, $\mathcal{C} = 2$ higher Chern insulator (HCI) phase and $\mathcal{C} = 2$ topological metal (TM) phase. These results are further supported by the $α$-$T_{3}$ zigzag edge states calculations. Our work elucidates the rich phase evolution of Haldane and modified Haldane models as $α$ varies continuously from $0$ to $1$ in an $α$-$T_3$ model. △ Less

Submitted 11 December, 2023; v1 submitted 1 December, 2023; originally announced December 2023.

Comments: 9 pages, 5 figures

Layer-Locked Anomalous Valley Hall Effect in Two-Dimensional A-Type Tetragonal Antiferromagnetic Insulator

Authors: San-Dong Guo, Wei Xu, Yang Xue, Gangqiang Zhu, Yee Sin Ang

Abstract: Antiferromagnetic (AFM) spintronics provides a route towards energy-efficient and ultrafast device applications. Achieving anomalous valley Hall effect (AVHE) in AFM monolayers is thus of considerable interest for both fundamental condensed matter physics and device enginering. Here we propose a route to achieve AVHE in A-type AFM insulator composed of vertically-stacked monolayer quantum anomalou… ▽ More Antiferromagnetic (AFM) spintronics provides a route towards energy-efficient and ultrafast device applications. Achieving anomalous valley Hall effect (AVHE) in AFM monolayers is thus of considerable interest for both fundamental condensed matter physics and device enginering. Here we propose a route to achieve AVHE in A-type AFM insulator composed of vertically-stacked monolayer quantum anomalous Hall insulator (QAHI) with strain and electric field modulations. Uniaxial strain and electric field generate valley polarization and spin splitting, respectively. Using first-principles calculations, $\mathrm{Fe_2BrMgP}$ monolayer is predicted to be a prototype A-type AFM hosting \emph{valley-polarized quantum spin Hall insulator} (VQSHI) in which AVHE and quantum spin Hall effect (QSHE) are synergized in a single system. Our findings reveal a route to achieve multiple Hall effects in 2D tetragonal AFM monolayers. △ Less

Submitted 21 November, 2023; originally announced November 2023.

Comments: 6 pages, 6 figures

Ultrathick MA$_2$N$_4$(M'N) Intercalated Monolayers with Sublayer-Protected Fermi Surface Conduction States: Interconnect and Metal Contact Applications

Authors: Che Chen Tho, Xukun Feng, Zhuoling Jiang, Liemao Cao, Chit Siong Lau, San-Dong Guo, Yee Sin Ang

Abstract: Recent discovery of ultrathick $\mathrm{MoSi_2N_4(MoN)_n}$ monolayers open up an exciting platform to engineer 2D material properties via intercalation architecture. Here we computationally investigate a series of ultrathick MA$_2$N$_4$(M'N) monolayers (M, M' = Mo, W; A = Si, Ge) under both homolayer and heterolayer intercalation architectures in which the same and different species of transition… ▽ More Recent discovery of ultrathick $\mathrm{MoSi_2N_4(MoN)_n}$ monolayers open up an exciting platform to engineer 2D material properties via intercalation architecture. Here we computationally investigate a series of ultrathick MA$_2$N$_4$(M'N) monolayers (M, M' = Mo, W; A = Si, Ge) under both homolayer and heterolayer intercalation architectures in which the same and different species of transition metal nitride inner core layers are intercalated by outer passivating nitride sublayers, respectively. The MA$_2$N$_4$(M'N) monolayers are thermally, dynamically and mechanically stable with excellent mechanical strength and metallic properties. Intriguingly, the metallic states around Fermi level are localized within the inner core layers. Carrier conduction mediated by electronic states around the Fermi level is thus spatially insulated from the external environment by the native outer nitride sublayers, suggesting the potential of MA$_2$N$_4$(M'N) in back-end-of-line (BEOL) metal interconnect applications. Nitrogen vacancy defect at the outer sublayers creates `punch through' states around the Fermi level that bridges the carrier conduction in the inner core layers and the outer environment, forming a electrical contact akin to the `vias' structures of metal interconnects. We further show that MoSi$_2$N$_4$(MoN) can serve as a quasi-Ohmic contact to 2D WSe$_2$. These findings reveal the promising potential of ultrathick MA$_2$N$_4$(MN) monolayers as metal electrodes and BEOL interconnect applications. △ Less

Submitted 15 November, 2023; originally announced November 2023.

Comments: 13 pages, 7 figures, 3 tables

Sub-5-nm Ultra-thin In$_2$O$_3$ Transistors for High-Performance and Low-Power Electronic Applications

Authors: Linqiang Xu, Lianqiang Xu, Jun Lan, Yida Li, Qiuhui Li, Aili Wang, Ying Guo, Yee Sin Ang, Ruge Quhe, Jing Lu

Abstract: Ultra-thin (UT) oxide semiconductors are promising candidates for back-end-of-line (BEOL) compatible transistors and monolithic three-dimensional integration. Experimentally, UT indium oxide (In$_2$O$_3$) field-effect transistors (FETs) with thicknesses down to 0.4 nm exhibits extremely high drain current (10000 $μ$A/$μ$m) and transconductance (4000 $μ$S/$μ$m). Here, we employ the ab initio quantu… ▽ More Ultra-thin (UT) oxide semiconductors are promising candidates for back-end-of-line (BEOL) compatible transistors and monolithic three-dimensional integration. Experimentally, UT indium oxide (In$_2$O$_3$) field-effect transistors (FETs) with thicknesses down to 0.4 nm exhibits extremely high drain current (10000 $μ$A/$μ$m) and transconductance (4000 $μ$S/$μ$m). Here, we employ the ab initio quantum transport simulation to investigate the performance limit of sub-5-nm gate length (Lg) UT In$_2$O$_3$ FET. Based on the International Technology Roadmap for Semiconductors (ITRS) criteria for high-performance (HP) devices, the scaling limit of UT In$_2$O$_3$ FETs can reach 2 nm in terms of on-state current, delay time, and power dissipation. The wide bandgap nature of UT In$_2$O$_3$ (3.15 eV) renders it a suitable candidate for ITRS low-power (LP) electronics with Lg down to 3 nm. Both the HP and LP UT In$_2$O$_3$ FETs exhibit superior energy-delay products as compared to other common 2D semiconductors such as monolayer MoS2 and MoTe2. Our study unveils the immense promise of UT In$_2$O$_3$ for both HP and LP device applications. △ Less

Submitted 6 November, 2023; originally announced November 2023.

Comments: 16 pages, 7 figures

Exceptional points in non-Hermitian Photonics: Applications and Recent Developments

Authors: Haiyu Meng, Yee Sin Ang, Ching Hua Lee

Abstract: Exceptional points are complex branching singularities of non-Hermitian bands that have lately attracted considerable interest, particularly in non-Hermitian photonics. In this article, we review some recent developments in non-Hermitian photonic platforms such as waveguides, photonic crystals, Fabry-Perot resonators and plasmonic systems, and suggest how optical non-linearities and exceptional bo… ▽ More Exceptional points are complex branching singularities of non-Hermitian bands that have lately attracted considerable interest, particularly in non-Hermitian photonics. In this article, we review some recent developments in non-Hermitian photonic platforms such as waveguides, photonic crystals, Fabry-Perot resonators and plasmonic systems, and suggest how optical non-linearities and exceptional bound states can significantly impact the development of non-Hermitian photonics in the near future. △ Less

Submitted 27 October, 2023; v1 submitted 25 October, 2023; originally announced October 2023.

Altermagnetic Schottky Contact

Authors: Yee Sin Ang

Abstract: Altermagnet is an emerging antiferromagnetic material subclass that exhibits spin-splitting in momentum space without net global magnetization and spin-orbit-coupling effect. In this work, we develop a model of thermal charge injection across an altermagnet/semiconductor (AM/S) Schottky contact. We obtain analytical expressions describing the spin-dependent thermionic current injection across the… ▽ More Altermagnet is an emerging antiferromagnetic material subclass that exhibits spin-splitting in momentum space without net global magnetization and spin-orbit-coupling effect. In this work, we develop a model of thermal charge injection across an altermagnet/semiconductor (AM/S) Schottky contact. We obtain analytical expressions describing the spin-dependent thermionic current injection across the AM/S contact under any arbitrary interface orientation angles. Interestingly, the spin-contrasting Fermi surface of an altermagnetic electrode enables spin-polarized current to be injected into a nonmagnetic semiconductor even though the system has net-zero magnetization. Our findings thus reveal an altermagntic mechanism to achieve spin injection without involving ferromagnetic ordering. The AM/S Schottky contact proposed here shall provide a potential altermagnetic building block of spintronic devices that are resilient against stray magnetic field perturbation and inherently compatible with ultracompact integration. △ Less

Submitted 17 October, 2023; originally announced October 2023.

Comments: 8 pages, 3 figures

How to produce spin-splitting in antiferromagnetic materials

Authors: San-Dong Guo, Guang-Zhao Wang, Yee Sin Ang

Abstract: Antiferromagnetic (AFM) materials have potential advantages for spintronics due to their robustness, ultrafast dynamics, and magnetotransport effects. However, the missing spontaneous polarization and magnetization hinders the efficient utilization of electronic spin in these AFM materials. Here, we propose a simple way to produce spin-splitting in AFM materials by making the magnetic atoms with o… ▽ More Antiferromagnetic (AFM) materials have potential advantages for spintronics due to their robustness, ultrafast dynamics, and magnetotransport effects. However, the missing spontaneous polarization and magnetization hinders the efficient utilization of electronic spin in these AFM materials. Here, we propose a simple way to produce spin-splitting in AFM materials by making the magnetic atoms with opposite spin polarization locating in the different environment (surrounding atomic arrangement), which does not necessarily require the presence of spin-orbital coupling (SOC). We confirm our proposal by four different types of two-dimensional (2D) AFM materials within the first-principles calculations. Our works provide a intuitional design principle to find or produce spin-splitting in AFM materials. △ Less

Submitted 27 August, 2023; originally announced August 2023.

Comments: 6 pages, 9 figures

Sub-5 nm Gate-All-Around InP Nanowire Transistors Towards High-Performance Devices

Authors: Linqiang Xu, Lianqiang Xu, Qiuhui Li, Shibo Fang, Ying Li, Ying Guo, Aili Wang, Ruge Quhe, Yee Sin Ang, Jing Lu

Abstract: Gate-all-around (GAA) nanowire (NW) field-effect transistor (FET) is a promising device architecture due to its superior gate controllability than that of the conventional FinFET architecture. The significantly higher electron mobility of indium phosphide (InP) NW than silicon NW makes it particularly well-suited for high-performance (HP) electronics applications. In this work, we perform an ab in… ▽ More Gate-all-around (GAA) nanowire (NW) field-effect transistor (FET) is a promising device architecture due to its superior gate controllability than that of the conventional FinFET architecture. The significantly higher electron mobility of indium phosphide (InP) NW than silicon NW makes it particularly well-suited for high-performance (HP) electronics applications. In this work, we perform an ab initio quantum transport simulation to investigate the performance limit of sub-5-nm gate length (Lg) GAA InP NW FETs. The GAA InP NW FETs with Lg of 4 nm can meet the International Technology Roadmap for Semiconductors (ITRS) requirements for HP devices from the perspective of on-state current, delay time, and power dissipation. We also investigate the impact of strain on 3-nm-Lg GAA InP NW FETs. The application of tensile strain results in a remarkable increase of over 60% in the on-state current. These results highlight the potential of GAA InP NW FETs for HP applications in the sub-5-nm Lg region. △ Less

Submitted 17 October, 2023; v1 submitted 27 August, 2023; originally announced August 2023.

Comments: 22 pages, 7 figures

Half-Valley Ohmic Contact and Contact-Limited Valley-Contrasting Current Injection

Authors: Xukun Feng, Chit Siong Lau, Shi-Jun Liang, Ching Hua Lee, Shengyuan A. Yang, Yee Sin Ang

Abstract: Two-dimensional (2D) ferrovalley semiconductor (FVSC) with spontaneous valley polarization offers an exciting material platform for probing Berry phase physics. How FVSC can be incorporated in valleytronic device applications, however, remain an open question. Here we generalize the concept of metal/semiconductor (MS) contact into the realm of valleytronics. We propose a half-valley Ohmic contact… ▽ More Two-dimensional (2D) ferrovalley semiconductor (FVSC) with spontaneous valley polarization offers an exciting material platform for probing Berry phase physics. How FVSC can be incorporated in valleytronic device applications, however, remain an open question. Here we generalize the concept of metal/semiconductor (MS) contact into the realm of valleytronics. We propose a half-valley Ohmic contact based on FVSC/graphene heterostructure where the two valleys of FVSC separately forms Ohmic and Schottky contacts with those of graphene, thus allowing current to be valley-selectively injected through the `Ohmic' valley while being blocked in the `Schottky' valley. We develop a theory of contact-limited valley-contrasting current injection and demonstrate that such transport mechanism can produce gate-tunable valley-polarized injection current. Using RuCl$_2$/graphene heterostructure as an example, we illustrate a device concept of valleytronic barristor where high valley polarization efficiency and sizable current on/off ratio, can be achieved under experimentally feasible electrostatic gating conditions. These findings uncover contact-limited valley-contrasting current injection as an efficient mechanism for valley polarization manipulation, and reveals the potential of valleytronic MS contact as a functional building block of valleytronic device technology. △ Less

Submitted 9 August, 2023; v1 submitted 7 August, 2023; originally announced August 2023.

Comments: 9 pages, 5 figures

Electric-field induced half-metal in monolayer CrSBr

Authors: Hao-Tian Guo, San-Dong Guo, Yee Sin Ang

Abstract: Two-dimensional (2D) half-metallic materials are highly desirable for nanoscale spintronic applications. Here, we propose a new mechanism that can achieve half-metallicity in 2D ferromagnetic (FM) material with two-layer magnetic atoms by electric field tuning. We use a concrete example of experimentally synthesized CrSBr monolayer to illustrate our proposal through the first-principle calculation… ▽ More Two-dimensional (2D) half-metallic materials are highly desirable for nanoscale spintronic applications. Here, we propose a new mechanism that can achieve half-metallicity in 2D ferromagnetic (FM) material with two-layer magnetic atoms by electric field tuning. We use a concrete example of experimentally synthesized CrSBr monolayer to illustrate our proposal through the first-principle calculations. It is found that the half-metal can be achieved in CrSBr within appropriate electric field range, and the corresponding amplitude of electric field intensity is available in experiment. Janus monolayer $\mathrm{Cr_2S_2BrI}$ is constructed, which possesses built-in electric field due to broken horizontal mirror symmetry. However, $\mathrm{Cr_2S_2BrI}$ without and with applied external electric field is always a FM semiconductor. A possible memory device is also proposed based on CrSBr monolayer. Our works will stimulate the application of 2D FM CrSBr in future spintronic nanodevices. △ Less

Submitted 7 August, 2023; originally announced August 2023.

Comments: 6 pages, 7 figures

Experimental observation of exceptional bound states in a classical circuit network

Authors: Deyuan Zou, Tian Chen, Haiyu Meng, Yee Sin Ang, Xiangdong Zhang, Ching Hua Lee

Abstract: Exceptional bound (EB) states represent an unique new class of robust bound states protected by the defectiveness of non-Hermitian exceptional points. Conceptually distinct from the more well-known topological states and non-Hermitian skin states, they were recently discovered as a novel source of negative entanglement entropy in the quantum entanglement context. Yet, EB states have been physicall… ▽ More Exceptional bound (EB) states represent an unique new class of robust bound states protected by the defectiveness of non-Hermitian exceptional points. Conceptually distinct from the more well-known topological states and non-Hermitian skin states, they were recently discovered as a novel source of negative entanglement entropy in the quantum entanglement context. Yet, EB states have been physically elusive, being originally interpreted as negative probability eigenstates of the propagator of non-Hermitian Fermi gases. In this work, we show that EB states are in fact far more ubiquitous, also arising robustly in broad classes of systems whether classical or quantum. This hinges crucially on a newly-discovered spectral flow that rigorously justifies the EB nature of small candidate lattice systems. As a highlight, we present their first experimental realization through an electrical circuit, where they manifest as prominent stable resonant voltage profiles. Our work brings a hitherto elusive but fundamentally distinctive quantum phenomenon into the realm of classical metamaterials, and provides a novel pathway for the engineering of robust modes in otherwise sensitive systems. △ Less

Submitted 3 August, 2023; originally announced August 2023.

Comments: 14 pages, 8 figures

Injection-Limited and Space-Charge-Limited Conduction in Wide Bandgap Semiconductors with Velocity Saturation Effect

Authors: Kok Wai Lee, Yee Sin Ang

Abstract: Carrier conduction in wide bandgap semiconductors (WBS) often exhibits velocity saturation at the high-electric field regime. How such effect influences the transition between contact-limited and space-charge-limited current in a two-terminal device remains largely unexplored thus far. Here, we develop a generalized carrier transport model that includes contact-limited field-induced carrier inject… ▽ More Carrier conduction in wide bandgap semiconductors (WBS) often exhibits velocity saturation at the high-electric field regime. How such effect influences the transition between contact-limited and space-charge-limited current in a two-terminal device remains largely unexplored thus far. Here, we develop a generalized carrier transport model that includes contact-limited field-induced carrier injection, space charge, carrier scattering and velocity saturation effect. The model reveals various transitional behaviors in the current-voltage characteristics, encompassing Fowler-Nordheim emission, trap-free Mott-Gurney (MG) SCLC and \emph{velocity-saturated SCLC}. Using GaN, 6H-SiC and 4H-SiC WBS as examples, we show that the velocity-saturated SCLC completely dominates the high-voltage ($10^2 \sim 10^4$ V) transport for typical sub-$μ$m GaN and SiC diodes, thus unravelling velocity-saturated SCLC as a central transport mechanism in WBG electronics. △ Less

Submitted 2 August, 2023; originally announced August 2023.

Comments: 8 pages, 5 figures

Over-Barrier Photoelectron Emission with Rashba Spin-Orbit Coupling

Authors: Bi Hong Tiang, Yee Sin Ang, L. K. Ang

Abstract: We develop a theoretical model to calculate the quantum efficiency (QE) of photoelectron emission from materials with Rashba spin-orbit coupling (RSOC) effect. In the low temperature limit, an analytical scaling between QE and the RSOC strength is obtained as QE $\propto (\hbarω-W)^2+2E_R(\hbar ω-W) -E_R^2/3$, where $\hbarω$, $W$ and $E_R$ are the incident photon energy, work function and the RSOC… ▽ More We develop a theoretical model to calculate the quantum efficiency (QE) of photoelectron emission from materials with Rashba spin-orbit coupling (RSOC) effect. In the low temperature limit, an analytical scaling between QE and the RSOC strength is obtained as QE $\propto (\hbarω-W)^2+2E_R(\hbar ω-W) -E_R^2/3$, where $\hbarω$, $W$ and $E_R$ are the incident photon energy, work function and the RSOC parameter respectively. Intriguingly, the RSOC effect substantially improves the QE for strong RSOC materials. For example, the QE of Bi$_2$Se$_3$ and Bi/Si(111) increases, by 149\% and 122\%, respectively due to the presence of strong RSOC. By fitting to the photoelectron emission characteristics, the analytical scaling law can be employed to extract the RSOC strength, thus offering a useful tool to characterize the RSOC effect in materials. Importantly, when the traditional Fowler-Dubridge model is used, the extracted results may substantially deviate from the actual values by $\sim90\%$, thus highlighting the importance of employing our model to analyse the photoelectron emission especially for materials with strong RSOC. These findings provide a theoretical foundation for the design of photoemitters using Rashba spintronic materials. △ Less

Submitted 2 August, 2023; originally announced August 2023.

Comments: 6 pages, 3 figures