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Physics > Applied Physics

arXiv:2308.00955 (physics)
[Submitted on 2 Aug 2023]

Title:Injection-Limited and Space-Charge-Limited Conduction in Wide Bandgap Semiconductors with Velocity Saturation Effect

Authors:Kok Wai Lee, Yee Sin Ang
View a PDF of the paper titled Injection-Limited and Space-Charge-Limited Conduction in Wide Bandgap Semiconductors with Velocity Saturation Effect, by Kok Wai Lee and 1 other authors
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Abstract:Carrier conduction in wide bandgap semiconductors (WBS) often exhibits velocity saturation at the high-electric field regime. How such effect influences the transition between contact-limited and space-charge-limited current in a two-terminal device remains largely unexplored thus far. Here, we develop a generalized carrier transport model that includes contact-limited field-induced carrier injection, space charge, carrier scattering and velocity saturation effect. The model reveals various transitional behaviors in the current-voltage characteristics, encompassing Fowler-Nordheim emission, trap-free Mott-Gurney (MG) SCLC and \emph{velocity-saturated SCLC}. Using GaN, 6H-SiC and 4H-SiC WBS as examples, we show that the velocity-saturated SCLC completely dominates the high-voltage ($10^2 \sim 10^4$ V) transport for typical sub-$\mu$m GaN and SiC diodes, thus unravelling velocity-saturated SCLC as a central transport mechanism in WBG electronics.
Comments: 8 pages, 5 figures
Subjects: Applied Physics (physics.app-ph); Mesoscale and Nanoscale Physics (cond-mat.mes-hall); Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:2308.00955 [physics.app-ph]
  (or arXiv:2308.00955v1 [physics.app-ph] for this version)
  https://doi.org/10.48550/arXiv.2308.00955
arXiv-issued DOI via DataCite

Submission history

From: Yee Sin Ang [view email]
[v1] Wed, 2 Aug 2023 05:41:24 UTC (1,207 KB)
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