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Demonstration of quantum error detection in a silicon quantum processor
Authors:
Chunhui Zhang,
Chunhui Li,
Zhen Tian,
Yan Jiang,
Feng Xu,
Shihang Zhang,
Hao Wang,
Yu-Ning Zhang,
Xuesong Bai,
Baolong Zhao,
Yi-Fei Zhang,
Huan Shu,
Jiaze Liu,
Kunrong Wu,
Chao Huang,
Keji Shi,
Mingchao Duan,
Tao Xin,
Peihao Huang,
Tianluo Pan,
Song Liu,
Guanyong Wang,
Guangchong Hu,
Yu He,
Dapeng Yu
Abstract:
Quantum error detection is essential in realizing large-scale universal quantum computation, especially for quantum error correction (QEC). However, key elements for FTQC have yet to be realized in silicon qubits. Here, we demonstrate quantum error detection on a donor-based silicon quantum processor comprising four-nuclear spin qubits and one electron spin as an auxiliary qubit. The entanglement…
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Quantum error detection is essential in realizing large-scale universal quantum computation, especially for quantum error correction (QEC). However, key elements for FTQC have yet to be realized in silicon qubits. Here, we demonstrate quantum error detection on a donor-based silicon quantum processor comprising four-nuclear spin qubits and one electron spin as an auxiliary qubit. The entanglement capability of this system is validated through the establishment of two-qubit Bell state entanglement between the nuclear spins and the generation of a four-qubit Greenberger-Horne-Zeilinger (GHZ) state, achieving a GHZ state fidelity of 88.5(2.3)%. Furthermore, by executing a four-qubit error detection circuit with the stabilizers, we successfully detect arbitrary single-qubit errors. The encoded Bell state entanglement information is recovered by performing the Pauli-frame update (PFU) via postprocessing. Based on the detected errors, we identify strongly biased noise in our system. Our results mark a significant advance toward FTQC in silicon spin qubits.
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Submitted 29 September, 2025;
originally announced September 2025.
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Scalable Spin Qubit Architecture with Donor-Cluster Arrays in Silicon
Authors:
Shihang Zhang,
Guangchong Hu,
Chunhui Zhang,
Guanyong Wang,
Tao Xin,
Yu He,
Peihao Huang
Abstract:
Spin qubits in silicon donors offer a promising platform for quantum computing due to their long coherence times and semiconductor compatibility. However, scaling donor-based spin qubits in silicon is fundamentally challenged by frequency crowding, crosstalk, and the tight tolerances on donor placement in conventional single-donor architectures.To overcome this, we introduce a paradigm based on a…
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Spin qubits in silicon donors offer a promising platform for quantum computing due to their long coherence times and semiconductor compatibility. However, scaling donor-based spin qubits in silicon is fundamentally challenged by frequency crowding, crosstalk, and the tight tolerances on donor placement in conventional single-donor architectures.To overcome this, we introduce a paradigm based on a two-dimensional array of phosphorus-donor clusters, in which multiple donors share a bound electron. The natural hyperfine distribution within each cluster enables individual addressability of the electron and nuclear spins, while tunable exchange interactions between clusters mediate local all-to-all connectivity. We present a universal control protocol achieving gate fidelities exceeding 99% for both intra-cluster and inter-cluster multi-qubit operations, with crosstalk effectively suppressed. The architecture natively supports efficient quantum error correction, including bias-tailored codes that exploit the intrinsic noise bias of spin qubits. Furthermore, its modular design is compatible with long-range coupling via electron shuttling for large-scale integration. This donor-cluster array architecture establishes a robust and hardware-efficient pathway towards scalable, fault-tolerant quantum computing in silicon.
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Submitted 13 May, 2026; v1 submitted 29 September, 2025;
originally announced September 2025.
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Structure evolution path of ferroelectric hafnium zirconium oxide nanocrystals under in-situ biasing
Authors:
Yunzhe Zheng,
Heng Yu,
Tianjiao Xin,
Kan-Hao Xue,
Yilin Xu,
Zhaomeng Gao,
Cheng Liu,
Qiwendong Zhao,
Yonghui Zheng,
Xiangshui Miao,
Yan Cheng
Abstract:
Fluorite-type $\mathrm{HfO_2}$-based ferroelectric (FE) oxides have rekindled interest in FE memories due to their compatibility with silicon processing and potential for high-density integration. The polarization characteristics of FE devices are governed by the dynamics of metastable domain structure evolution. Insightful design of FE devices for encoding and storage necessitates a comprehensive…
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Fluorite-type $\mathrm{HfO_2}$-based ferroelectric (FE) oxides have rekindled interest in FE memories due to their compatibility with silicon processing and potential for high-density integration. The polarization characteristics of FE devices are governed by the dynamics of metastable domain structure evolution. Insightful design of FE devices for encoding and storage necessitates a comprehensive understanding of the internal structural evolution. Here, we demonstrate the evolution of domain structures through a transient polar orthorhombic (O)-$Pmn2_1$-like configuration via $in$-$situ$ biasing on $\mathrm{TiN/Hf_{0.5}Zr_{0.5}O_2/TiN}$ capacitors within spherical aberration-corrected transmission electron microscope, combined with theoretical calculations. Furthermore, it is directly evidenced that the non-FE O-$Pbca$ transforms into the FE O-$Pca2_1$ phase under electric field, with the polar axis of the FE-phase aligning towards the bias direction through ferroelastic transformation, thereby enhancing FE polarization. As cycling progresses further, however, the polar axis collapses, leading to FE degradation. These novel insights into the intricate structural evolution path under electrical field cycling facilitate optimization and design strategies for $\mathrm{HfO_2}$-based FE memory devices.
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Submitted 17 September, 2024;
originally announced September 2024.
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Anomalous skin effect study of superconducting film
Authors:
Binping Xiao,
M. Blaskiewicz,
T. Xin
Abstract:
The field distribution inside the superconducting radiofrequency (SRF) film with different mean free path is studied using niobium (Nb) as an example. The surface resistance of clean Nb film with different substrate and different film thickness is calculated. We also show the study of a special structured multilayer superconducting film called Superconductor-Insulator-Superconductor (SIS) structur…
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The field distribution inside the superconducting radiofrequency (SRF) film with different mean free path is studied using niobium (Nb) as an example. The surface resistance of clean Nb film with different substrate and different film thickness is calculated. We also show the study of a special structured multilayer superconducting film called Superconductor-Insulator-Superconductor (SIS) structure.
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Submitted 19 March, 2021; v1 submitted 27 January, 2021;
originally announced January 2021.
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Crystallization Mechanism Tuned Phase-Change Materials: Quantum Effect on Te-Terminated Boundary
Authors:
Wen-Xiong Song,
Qiongyan Tang,
Jin Zhao,
Muriel Veron,
Xilin Zhou,
Yonghui Zheng,
Daolin Cai,
Yan Cheng,
Tianjiao Xin,
Zhi-Pan Liu,
Zhitang Song
Abstract:
While phase-change materials (PCMs) composed of chalcogenide have different crystallization mechanisms (CM), such as nucleation-dominated Ge2Sb2Te5 (GST) and growth-dominated GeTe (GT), revealing the essential reason of CM as well as the tuned properties is still a long-standing issue. Here, we remarkably find the distinct stability of Te-terminated (111) boundaries (TTB) in different systems, whi…
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While phase-change materials (PCMs) composed of chalcogenide have different crystallization mechanisms (CM), such as nucleation-dominated Ge2Sb2Te5 (GST) and growth-dominated GeTe (GT), revealing the essential reason of CM as well as the tuned properties is still a long-standing issue. Here, we remarkably find the distinct stability of Te-terminated (111) boundaries (TTB) in different systems, which provides a path to understand the difference in CM. It stems from the quantum effect of molecular orbital theory: the optimal local chemical composition results in the formation of TTB without dangling bonds (DB) in GST but with DB in GT, where DB destabilizes boundary due to its distorted local environment mismatching Oh symmetry of p orbitals. Moreover, the inner vacancy concentration in GST is alterable and controlled by TTB, manifested by the absence of cubic-to-hexagonal transition in carbon-doped GST of small grains and minimized inner vacancy. Finally, the charge transport property (CTP) is controlled by boundary via changing the density of charge or hole nearby as well as vacancy. These findings open the door to tune CTP by CM, which is necessary for achieving low-power and ultrafast devices.
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Submitted 22 November, 2020;
originally announced November 2020.
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Experimental Detection of the Quantum Phases of a Three-Dimensional Topological Insulator on a Spin Quantum Simulator
Authors:
Tao Xin,
Yishan Li,
Yu-ang Fan,
Xuanran Zhu,
Yingjie Zhang,
Xinfang Nie,
Jun Li,
Qihang Liu,
Dawei Lu
Abstract:
The detection of topological phases of matter becomes a central issue in recent years. Conventionally, the realization of a specific topological phase in condensed matter physics relies on probing the underlying surface band dispersion or quantum transport signature of a real material, which may be imperfect or even absent. On the other hand, quantum simulation offers an alternative approach to di…
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The detection of topological phases of matter becomes a central issue in recent years. Conventionally, the realization of a specific topological phase in condensed matter physics relies on probing the underlying surface band dispersion or quantum transport signature of a real material, which may be imperfect or even absent. On the other hand, quantum simulation offers an alternative approach to directly measure the topological invariant on a universal quantum computer. However, experimentally demonstrating high-dimensional topological phases remains a challenge due to the technical limitations of current experimental platforms. Here, we investigate the three-dimensional topological insulators in the AIII (chiral unitary) symmetry class which yet lack experimental realization. Using the nuclear magnetic resonance system, we experimentally demonstrate their topological properties, where a dynamical quenching approach is adopted and the dynamical bulk-boundary correspondence in the momentum space is observed. As a result, the topological invariants are measured with high precision on the band-inversion surface, exhibiting robustness to the decoherence effect. Our work paves the way towards the quantum simulation of topological phases of matter in higher dimensions and more complex systems through controllable quantum phases transitions.
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Submitted 14 January, 2020;
originally announced January 2020.