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Imaging geometry- and phase-controlled spectra in a surface-state Andreev cavity
Authors:
Adrian Greichgauer,
Yoichi Ando,
Jens Brede
Abstract:
Andreev cavities provide a setting in which superconducting proximity spectra are shaped by phase-coherent electron-hole motion along extended trajectories. While such Andreev physics is well established in transport, local spectra in two-dimensional cavities remain largely unexplored in real space. Here we use scanning tunnelling spectroscopy to study confined Cu(111) surface states coupled to su…
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Andreev cavities provide a setting in which superconducting proximity spectra are shaped by phase-coherent electron-hole motion along extended trajectories. While such Andreev physics is well established in transport, local spectra in two-dimensional cavities remain largely unexplored in real space. Here we use scanning tunnelling spectroscopy to study confined Cu(111) surface states coupled to superconducting Nb(110). The in-plane magnetic-field scale for the collapse of the resolved low-energy spectrum is controlled by the transverse extent available to Andreev trajectories, while the zero-field excitation energy evolves with the characteristic trajectory length. These trends, together with spatial variations within individual islands and the response to vortex phase textures, are captured by a minimal semiclassical phase-accumulation picture. Our results identify geometry-defined Andreev trajectories as a design principle for phase-coherent superconducting cavities accessible by local spectroscopy.
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Submitted 26 June, 2026;
originally announced June 2026.
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Topological insulator single-electron transistors for charge sensing applications
Authors:
Omargeldi Atanov,
Junya Feng,
Jens Brede,
Oliver Breunig,
Yoichi Ando
Abstract:
We present topological insulator (TI)-based single-electron transistors (SETs) as magnetic-field-compatible charge sensing devices that are easily integrable with TI-superconductor hybrid platforms. We observe well-resolved Coulomb diamonds in the charge-stability diagrams of our devices confirming the charge quantization and single-electron transport. In some devices, the Coulomb resonances show…
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We present topological insulator (TI)-based single-electron transistors (SETs) as magnetic-field-compatible charge sensing devices that are easily integrable with TI-superconductor hybrid platforms. We observe well-resolved Coulomb diamonds in the charge-stability diagrams of our devices confirming the charge quantization and single-electron transport. In some devices, the Coulomb resonances show persistent shifts corresponding up to $\sim$ e/2 charge. An axial magnetic field further displaces these shifts to higher or lower gate voltages. We find that the axial magnetic-field dependence of the shifts is consistent with the Zeeman shift of a trap state coupled to the SET, and we reproduce the observations using numerical simulations. The resonance shifts are therefore identified as a consequence of the sensitivity of our TI-SET devices to charges in proximity. Establishing this charge sensing capability is a first step toward integrating TI-SETs as charge sensors in more complex TI-based hybrid devices, with the overarching goal of detecting and braiding Majorana zero modes.
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Submitted 25 March, 2026;
originally announced March 2026.
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Ex Situ Fabrication of Superconducting Nanostructures for Low-Temperature STM
Authors:
Adrian Greichgauer,
Roozbeh Yazdanpanah,
Alexey Taskin,
Oliver Breunig,
Yoichi Ando,
Jens Brede
Abstract:
Nanofabrication of topological insulator (TI) devices is essential for accessing edge and interface states, but conventional lithography and etching compromise the atomically clean surfaces required for scanning tunneling microscopy and spectroscopy (STM/STS). We demonstrate a fabrication strategy that combines ex situ lithographic patterning with in situ ultrahigh-vacuum cleaving and flipping, yi…
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Nanofabrication of topological insulator (TI) devices is essential for accessing edge and interface states, but conventional lithography and etching compromise the atomically clean surfaces required for scanning tunneling microscopy and spectroscopy (STM/STS). We demonstrate a fabrication strategy that combines ex situ lithographic patterning with in situ ultrahigh-vacuum cleaving and flipping, yielding atomically clean, nanopatterned TI-superconductor heterostructures suitable for STM/STS. In Design I, nanoribbons were defined by etching trenches into a TI film and capping with Nb. This enabled spectroscopy on large areas, although edge quality was limited by etch debris. In Design II, local thinning defined buried nanoribbons within a continuous TI film, producing pristine planar surfaces. STM/STS revealed well-developed superconducting gaps in the surrounding film, with suppressed gaps on the nanoribbons, consistent with vertical proximity coupling. This approach establishes a reproducible pathway for high-resolution STM/STS studies of proximitized nanostructures, providing a scalable platform for exploring topological superconductivity.
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Submitted 23 September, 2025; v1 submitted 18 July, 2025;
originally announced July 2025.
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Quasiparticle interference on the surface of Bi$_{\mathbf{2}}$Se$_{\mathbf{3}}$ terminated (PbSe)$_{\mathbf 5}$(Bi$_{\mathbf 2}$Se$_{\mathbf 3}$)$_{\mathbf 6}$
Authors:
Mahasweta Bagchi,
Philipp Rüßmann,
Gustav Bihlmayer,
Stefan Blügel,
Yoichi Ando,
Jens Brede
Abstract:
Among the family of topological superconductors derived from {\BiSe}, $\mathrm{Cu}_x(\mathrm{PbSe})_{5}(\mathrm{Bi}_{2}\mathrm{Se}_{3})_{6}$ is unique in its surface termination of a single quintuple layer (QL) of the topological insulator (TI) \BiSe{} on an ordinary insulator PbSe. Here, we report a combined scanning tunneling microscopy (STM) and density functional theory (DFT) characterization…
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Among the family of topological superconductors derived from {\BiSe}, $\mathrm{Cu}_x(\mathrm{PbSe})_{5}(\mathrm{Bi}_{2}\mathrm{Se}_{3})_{6}$ is unique in its surface termination of a single quintuple layer (QL) of the topological insulator (TI) \BiSe{} on an ordinary insulator PbSe. Here, we report a combined scanning tunneling microscopy (STM) and density functional theory (DFT) characterization of the cleaved surface of the parent compound $(\mathrm{PbSe})_{5}(\mathrm{Bi}_{2}\mathrm{Se}_{3})_{6}$ (PSBS). Interestingly, the potential disorder due to the random distribution of native defects is only $Γ\sim 4~\mathrm{meV}$, comparable to the smallest reported for TIs. Performing high-resolution quasiparticle interference imaging (QPI) near the Fermi energy ($E-E_\mathrm{F} = -1~\mathrm{eV}~\mathrm{to}~0.6~\mathrm{eV}$) we reconstruct the dispersion relation of the dominant spectral feature and our ab initio calculations show that this surface feature originates from two bands with Rashba-like splitting due to strong spin-orbit coupling and inversion symmetry breaking. Moreover, only a small hexagonal distortion of the calculated Fermi surface is seen in the full momentum space distribution of the measured scattering data. Nevertheless, the scattering pattern at lower energies transforms into a flower-like shape with suppressed intensity along the $\overline{Γ\mathrm{K}}$ direction. We show that this effect is not due to the forbidden backscattering in the spin-momentum locked surface state in Bi$_2$Se$_3$ but reflects the threefold symmetry of the scattering potential.
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Submitted 10 June, 2025; v1 submitted 4 February, 2025;
originally announced February 2025.
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Characterizing the chemical potential disorder in the topological insulator (Bi$_{1-x}$Sb$_x$)$_2$Te$_3$ thin films
Authors:
Jens Brede,
Mahasweta Bagchi,
Adrian Greichgauer,
Anjana Uday,
Andrea Bliesener,
Gertjan Lippertz,
Roozbeh Yazdanpanah,
Alexey Taskin,
Yoichi Ando
Abstract:
We use scanning tunneling microscopy and spectroscopy under ultra-high vacuum and down to 1.7 K to study the local variations of the chemical potential on the surface of the topological insulator (Bi$_{1-x}$Sb$_x$)$_2$Te$_3$ thin films (thickness 7 - 30 nm) with varying Sb-concentration $x$, to gain insight into the charge puddles formed in thin films of a compensated topological insulator. We fou…
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We use scanning tunneling microscopy and spectroscopy under ultra-high vacuum and down to 1.7 K to study the local variations of the chemical potential on the surface of the topological insulator (Bi$_{1-x}$Sb$_x$)$_2$Te$_3$ thin films (thickness 7 - 30 nm) with varying Sb-concentration $x$, to gain insight into the charge puddles formed in thin films of a compensated topological insulator. We found that the amplitude of the potential fluctuations, $Γ$, is between 5 to 14 meV for quasi-bulk conducting films and about 30 - 40 meV for bulk-insulating films. The length scale of the fluctuations, $λ$, was found to span the range of 13 - 54 nm, with no clear correlation with $Γ$. Applying a magnetic field normal to the surface, we observe the condensation of the two-dimensional topological surface state into Landau levels and find a weak but positive correlation between $Γ$ and the spectral width of the Landau-level peaks, which suggests that quantum smearing from drift motion is the source of the Landau level broadening. Our systematic measurements give useful guidelines for realizing $(\mathrm{Bi}_{1-x}\mathrm{Sb}_x)_2\mathrm{Te}_3$ thin films with an acceptable level of potential fluctuations. In particular, we found that $x\approx 0.65$ realizes the situation where $Γ$ shows a comparatively small value of 14 meV and the Dirac point lies within $\sim$10 meV of the Fermi energy.
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Submitted 4 October, 2024;
originally announced October 2024.
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Selective-Area Epitaxy of Bulk-Insulating (Bi$_x$Sb$_{1-x}$)$_2$Te$_3$ Films and Nanowires by Molecular Beam Epitaxy
Authors:
Gertjan Lippertz,
Oliver Breunig,
Rafael Fister,
Anjana Uday,
Andrea Bliesener,
Jens Brede,
Alexey Taskin,
Yoichi Ando
Abstract:
The selective-area epitaxy (SAE) is a useful technique to grow epitaxial films with a desired shape on a pre-patterned substrate. Although SAE of patterned topological-insulator (TI) thin films has been performed in the past, there has been no report of SAE-grown TI structures that are bulk-insulating. Here we report the successful growth of Hall-bars and nanowires of bulk-insulating TIs using the…
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The selective-area epitaxy (SAE) is a useful technique to grow epitaxial films with a desired shape on a pre-patterned substrate. Although SAE of patterned topological-insulator (TI) thin films has been performed in the past, there has been no report of SAE-grown TI structures that are bulk-insulating. Here we report the successful growth of Hall-bars and nanowires of bulk-insulating TIs using the SAE technique. Their transport properties show that the quality of the selectively-grown structures is comparable to that of bulk-insulating TI films grown on pristine substrates. In SAE-grown TI nanowires, we were able to observe Aharonov-Bohm-like magnetoresistance oscillations that are characteristic of the quantum-confined topological surface states. The availability of bulk-insulating TI nanostructures via the SAE technique opens the possibility to fabricate intricate topological devices in a scalable manner.
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Submitted 24 July, 2024; v1 submitted 12 April, 2024;
originally announced April 2024.
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Optimizing the Ullmann coupling reaction efficiency on an oxide surface by metal atom addition
Authors:
Mikel Abadia,
Ignacio Piquero-Zulaica,
Jens Brede,
Alberto Verdini,
Luca Floreano,
Johannes V. Barth,
Jorge Lobo-Checa,
Martina Corso,
Celia Rogero
Abstract:
The bottom-up synthesis of carbon based nanomaterials directly on semiconductor surfaces allows to decouple their electronic and magnetic properties from the substrates. However, the lack of reactivity on these non-metallic surfaces hinders or reduces significantly the yield of these reactions. Such hurdles practically precludes transferring bottom-up synthesis strategies onto semiconducting and i…
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The bottom-up synthesis of carbon based nanomaterials directly on semiconductor surfaces allows to decouple their electronic and magnetic properties from the substrates. However, the lack of reactivity on these non-metallic surfaces hinders or reduces significantly the yield of these reactions. Such hurdles practically precludes transferring bottom-up synthesis strategies onto semiconducting and insulating surfaces. Here, we achieve a high polymerization yield of terphenyl molecules on the semiconductor TiO$_2$(110) surface by incorporating cobalt atoms as catalysts in the Ullmann coupling reaction. Cobalt atoms trigger the debromination of 4,4-dibromo-p-terphenyl (DBTP) molecules on TiO$_2$(110) and the formation of an intermediate organometallic phase already at room-temperature (RT). As the debromination temperature is drastically reduced, the homo-coupling temperature is also significantly lowered, preventing the desorption of DBTP molecules from the TiO$_2$(110) surface and leading to a radical improvement on the poly-para-phenylene (PPP) polymerization yield. The universality of this mechanism is demonstrated with an iodinated terphenyl derivative (DITP), which shows analogous dehalogenation and polymerization temperatures with a very similar reaction yield. Consequently, we propose to use minute amounts of metal catalyst to drive forward generic bottom-up synthesis strategies on non-metallic surfaces.
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Submitted 20 June, 2023;
originally announced June 2023.
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Rotation of gap nodes in the topological superconductor Cu$_x$(PbSe)$_5$(Bi$_2$Se$_3$)$_6$
Authors:
Mahasweta Bagchi,
Jens Brede,
Aline Ramires,
Yoichi Ando
Abstract:
Among the family of odd-parity topological superconductors derived from $\mathrm{Bi}_{2}\mathrm{Se}_{3}$, $\mathrm{Cu}_{x}(\mathrm{PbSe})_{5}(\mathrm{Bi}_{2}\mathrm{Se}_{3})_{6}$ (CPSBS) has been elucidated to have gap nodes. Although the nodal gap structure has been established by specific-heat and thermal-conductivity measurements, there has been no direct observation of the superconducting gap…
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Among the family of odd-parity topological superconductors derived from $\mathrm{Bi}_{2}\mathrm{Se}_{3}$, $\mathrm{Cu}_{x}(\mathrm{PbSe})_{5}(\mathrm{Bi}_{2}\mathrm{Se}_{3})_{6}$ (CPSBS) has been elucidated to have gap nodes. Although the nodal gap structure has been established by specific-heat and thermal-conductivity measurements, there has been no direct observation of the superconducting gap of CPSBS using scanning tunnelling spectroscopy (STS). Here we report the first STS experiments on CPSBS down to 0.35 K, which found that the vortices generated by out-of-plane magnetic fields have an elliptical shape, reflecting the anisotropic gap structure. The orientation of the gap minima is found to be aligned with the bulk direction when the surface lattice image shows twofold symmetry, but, surprisingly, it is rotated by 30$^{\circ}$ when twofold symmetry is absent. In addition, the superconducting gap spectra in zero magnetic field suggest that the gap nodes are most likely lifted. We argue that only an emergent symmetry at the surface, allowing for a linear superposition of gap functions with different symmetries in the bulk, can lead to the rotation of the gap nodes. The absence of inversion symmetry at the surface additionally lifts the nodes. This result establishes the subtle but crucial role of crystalline symmetry in topological superconductivity.
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Submitted 12 April, 2024; v1 submitted 26 May, 2023;
originally announced May 2023.
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Detecting the spin-polarization of edge states in graphene nanoribbons
Authors:
Jens Brede,
Nestor Merino-Díez,
Alejandro Berdonces,
Sofía Sanz,
Amelia Domínguez-Celorrio,
Jorge Lobo-Checa,
Manuel Vilas-Varela,
Diego Peña,
Thomas Frederiksen,
Jose I. Pascual,
Dimas G. de Oteyza,
David Serrate
Abstract:
Low dimensional carbon-based materials are interesting because they can show intrinsic $π$-magnetism associated to p-electrons residing in specific open-shell configurations. Consequently, during the last years there have been impressive advances in the field combining indirect experimental fingerprints of localized magnetic moments with theoretical models. In spite of that, a characterization of…
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Low dimensional carbon-based materials are interesting because they can show intrinsic $π$-magnetism associated to p-electrons residing in specific open-shell configurations. Consequently, during the last years there have been impressive advances in the field combining indirect experimental fingerprints of localized magnetic moments with theoretical models. In spite of that, a characterization of their spatial- and energy-resolved spin-moment has so far remained elusive. To obtain this information, we present an approach based on the stabilization of the magnetization of $π$-orbitals by virtue of a supporting substrate with ferromagnetic ground state. Remarkably, we go beyond localized magnetic moments in radical or faulty carbon sites: In our study, energy-dependent spin-moment distributions have been extracted from spatially extended one-dimensional edge states of chiral graphene nanoribbons. This method can be generalized to other nanographene structures, representing an essential validation of these materials for their use in spintronics and quantum technologies.
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Submitted 26 January, 2023;
originally announced January 2023.
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Observability of superconductivity in Sr-doped Bi2Se3 at the surface using scanning tunneling microscope
Authors:
Mahasweta Bagchi,
Jens Brede,
Yoichi Ando
Abstract:
The superconducting materials family of doped Bi2Se3 remains intensively studied in the field of condensed matter physics due to strong experimental evidence for topologically non-trivial superconductivity in the bulk. However, at the surface of these materials, even the observation of superconductivity itself is still controversial. We use scanning tunneling microscopy (STM) down to 0.4 K to show…
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The superconducting materials family of doped Bi2Se3 remains intensively studied in the field of condensed matter physics due to strong experimental evidence for topologically non-trivial superconductivity in the bulk. However, at the surface of these materials, even the observation of superconductivity itself is still controversial. We use scanning tunneling microscopy (STM) down to 0.4 K to show that on the surface of bulk superconducting SrxBi2Se3, no gap in the density of states is observed around the Fermi energy as long as clean metallic probe tips are used. Nevertheless, using scanning electron microscopy and energy-dispersive X-ray analysis, we find that micron-sized flakes of SrxBi2Se3 are easily transferred from the sample onto the STM probe tip and that such flakes consistently show a superconducting gap in the density of states. We argue that the superconductivity in SrxBi2Se3 crystals does not extend to the surface when the topological surface state (TSS) is intact, but in micro-flakes the TSS has been destroyed due to strain and allows the superconductivity to extend to the surface. To understand this phenomenon, we propose that the local electric field, always found in electron doped Bi2Se3 in the presence of the TSS due to an intrinsic upward band bending, works against superconductivity at the surface.
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Submitted 15 February, 2022;
originally announced February 2022.
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The Vertical Position of Sr Dopants in the Sr$_x$Bi$_2$Se$_3$ Superconductor
Authors:
You-Ron Lin,
Mahasweta Bagchi,
Serguei Soubatch,
Tien-Lin Lee,
Jens Brede,
François C. Bocquet,
Christian Kumpf,
Yoichi Ando,
F. Stefan Tautz
Abstract:
The discovery of topological superconductivity in doped Bi$_2$Se$_3$ made this class of materials highly important for the field of condensed matter physics. However, the structural origin of the superconducting state remained elusive, despite being investigated intensively in recent years. We use scanning tunneling microscopy and the normal incidence x-ray standing wave (NIXSW) technique in order…
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The discovery of topological superconductivity in doped Bi$_2$Se$_3$ made this class of materials highly important for the field of condensed matter physics. However, the structural origin of the superconducting state remained elusive, despite being investigated intensively in recent years. We use scanning tunneling microscopy and the normal incidence x-ray standing wave (NIXSW) technique in order to determine the vertical position of the dopants -- one of the key parameters for understanding topological superconductivity in this material -- for the case of Sr$_{x}$Bi$_2$Se$_3$. In a novel approach we analyze the NIXSW data in consideration of the inelastic mean free path of the photoemitted electrons, which allows us to distinguish between symmetry equivalent sites. We find that Sr-atoms are not situated inside the van der Waals gap between the Bi$_2$Se$_3$ quintuple layers but rather in the quintuple layer close to the outer Se planes.
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Submitted 31 May, 2021;
originally announced May 2021.
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Plasmonics in Atomically-Thin Crystalline Silver Films
Authors:
Zakaria M. Abd El-Fattah,
Vahagn Mkhitaryan,
Jens Brede,
Laura Fernández,
Cheng Li,
Qiushi Guo,
Arnab Ghosh,
A. Rodríguez Echarri,
Doron Naveh,
Fengnian Xia,
J. E. Ortega,
F. Javier García de Abajo
Abstract:
Light-matter interaction at the atomic scale rules fundamental phenomena such as photoemission and lasing, while enabling basic everyday technologies, including photovoltaics and optical communications. In this context, plasmons --the collective electron oscillations in conducting materials-- are important because they allow manipulating optical fields at the nanoscale. The advent of graphene and…
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Light-matter interaction at the atomic scale rules fundamental phenomena such as photoemission and lasing, while enabling basic everyday technologies, including photovoltaics and optical communications. In this context, plasmons --the collective electron oscillations in conducting materials-- are important because they allow manipulating optical fields at the nanoscale. The advent of graphene and other two-dimensional crystals has pushed plasmons down to genuinely atomic dimensions, displaying appealing properties such as a large electrical tunability. However, plasmons in these materials are either too broad or lying at low frequencies, well below the technologically relevant near-infrared regime. Here we demonstrate sharp near-infrared plasmons in lithographically-patterned wafer-scale atomically-thin silver crystalline films. Our measured optical spectra reveal narrow plasmons (quality factor $\sim4$), further supported by a low sheet resistance comparable to bulk metal in few-atomic-layer silver films down to seven Ag(111) monolayers. Good crystal quality and plasmon narrowness are obtained despite the addition of a thin passivating dielectric, which renders our samples resilient to ambient conditions. The observation of spectrally sharp and strongly confined plasmons in atomically thin silver holds great potential for electro-optical modulation and optical sensing applications.
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Submitted 13 June, 2019; v1 submitted 23 January, 2019;
originally announced January 2019.
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Π Band Dispersion along Conjugated Organic Nanowires Synthesized on a Metal Oxide Semiconductor
Authors:
Guillaume Vasseur,
Mikel Abadia,
Luis A. Miccio,
Jens Brede,
Aran Garcia-Lekue,
Dimas G. de Oteyza,
Celia Rogero,
Jorge Lobo-Checa,
J. Enrique Ortega
Abstract:
Surface confined dehalogenation reactions are versatile bottom-up approaches for the synthesis of carbon-based nanostructures with predefined chemical properties. However, for devices generally requiring low conductivity substrates, potential applications are so far severely hampered by the necessity of a metallic surface to catalyze the reactions. In this work we report the synthesis of ordered a…
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Surface confined dehalogenation reactions are versatile bottom-up approaches for the synthesis of carbon-based nanostructures with predefined chemical properties. However, for devices generally requiring low conductivity substrates, potential applications are so far severely hampered by the necessity of a metallic surface to catalyze the reactions. In this work we report the synthesis of ordered arrays of poly(p-phenylene) chains on the surface of semiconducting TiO2(110) via a dehalogenative homocoupling of 4,4"-dibromoterphenyl precursors. The supramolecular phase is clearly distinguished from the polymeric one using low energy electron diffraction and scanning tunneling microscopy as the substrate temperature used for deposition is varied. X ray photoelectron spectroscopy of C 1s and Br 3d core levels traces the temperature of the onset of dehalogenation to around 475 K. Moreover, angle-resolved photoemission spectroscopy and tight-binding calculations identify a highly dispersive band characteristic of a substantial overlap between the precursor's π states along the polymer, considered as the fingerprint of a successful polymerization. Thus, these results establish the first spectroscopic evidence that atomically precise carbon based nanostructures can readily be synthesized on top of a transition-metal oxide surface, opening the prospect for the bottom-up production of novel molecule-semiconductor devices.
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Submitted 24 June, 2016;
originally announced June 2016.
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Controlling the Local Spin-Polarization at the Organic-Ferromagnetic Interface
Authors:
Nicolae Atodiresei,
Jens Brede,
Predrag Lazic,
Vasile Caciuc,
Germar Hoffmann,
Roland Wiesendanger,
Stefan Blugel
Abstract:
By means of ab initio calculations and spin-polarized scanning tunneling microscopy experiments we show how to manipulate the local spin-polarization of a ferromagnetic surface by creating a complex energy dependent magnetic structure. We demonstrate this novel effect by adsorbing organic molecules containing pi(pz)-electrons onto a ferromagnetic surface, in which the hybridization of the out-of-p…
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By means of ab initio calculations and spin-polarized scanning tunneling microscopy experiments we show how to manipulate the local spin-polarization of a ferromagnetic surface by creating a complex energy dependent magnetic structure. We demonstrate this novel effect by adsorbing organic molecules containing pi(pz)-electrons onto a ferromagnetic surface, in which the hybridization of the out-of-plane pz atomic type orbitals with the d-states of the metal leads to the inversion of the spin-polarization at the organic site due to a pz - d Zener exchange type mechanism. As a key result, we demonstrate that it is possible to selectively inject spin-up and spin-down electrons from the same ferromagnetic surface, an effect which can be exploited in future spintronic devices.
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Submitted 28 May, 2010;
originally announced May 2010.
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Spin- and energy-dependent tunneling through a single molecule with intramolecular spatial resolution
Authors:
Jens Brede,
Nicolae Atodiresei,
Stefan Kuck,
Predrag Lazic,
Vasile Caciuc,
Yoshitada Morikawa,
Germar Hoffmann,
Stefan Bluegel,
Roland Wiesendanger
Abstract:
We investigate the spin- and energy dependent tunneling through a single organic molecule (CoPc) adsorbed on a ferromagnetic Fe thin film, spatially resolved by low-temperature spin-polarized scanning tunneling microscopy. Interestingly, the metal ion as well as the organic ligand show a significant spin-dependence of tunneling current flow. State-of-the-art ab initio calculations including also v…
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We investigate the spin- and energy dependent tunneling through a single organic molecule (CoPc) adsorbed on a ferromagnetic Fe thin film, spatially resolved by low-temperature spin-polarized scanning tunneling microscopy. Interestingly, the metal ion as well as the organic ligand show a significant spin-dependence of tunneling current flow. State-of-the-art ab initio calculations including also van-der-Waals interactions reveal a strong hybridization of molecular orbitals and surface 3d states. The molecule is anionic due to a transfer of one electron, resulting in a non-magnetic (S= 0) state. Nevertheless, tunneling through the molecule exhibits a pronounced spin-dependence due to spin-split molecule-surface hybrid states.
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Submitted 26 May, 2010;
originally announced May 2010.