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Layer Dependent Thermal Transport Properties of One- to Three-Layer Magnetic Fe:MoS2
Authors:
Elham Easy,
Mengqi Fang,
Mingxing Li,
Eui-Hyeok Yang,
Xian Zhang
Abstract:
Two-Dimensional (2D) transition metal dichalcogenides (TMDs) have been the subject of extensive attention thanks to their unique properties and atomically thin structure. Because of its unprecedented room-temperature magnetic properties, iron-doped MoS2 (Fe:MoS2) is considered the next-generation quantum and magnetic material. It is essential to understand Fe:MoS2's thermal behavior since temperat…
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Two-Dimensional (2D) transition metal dichalcogenides (TMDs) have been the subject of extensive attention thanks to their unique properties and atomically thin structure. Because of its unprecedented room-temperature magnetic properties, iron-doped MoS2 (Fe:MoS2) is considered the next-generation quantum and magnetic material. It is essential to understand Fe:MoS2's thermal behavior since temperature and thermal load/activation are crucial for their magnetic properties and the current nano and quantum devices have been severely limited by thermal management. In this work, Fe:MoS2 is synthesized by doping Fe atoms into MoS2 using the chemical vapor deposition (CVD) synthesis and a refined version of opto-thermal Raman technique is used to study the thermal transport properties of Fe:MoS2 in the forms of single (1L), bilayer (2L), and tri-layer (3L). In the Opto-thermal Raman technique, a laser is focused on the center of a thin film and used to measure the peak position of a Raman-active mode. The lateral thermal conductivity of 1-3L of Fe:MoS2 and the interfacial thermal conductance between Fe:MoS2 and the substrate were obtained by analyzing the temperature-dependent and power-dependent Raman measurement, laser power absorption coefficient, and laser spot sizes. We also characterized Fe:MoS2's thermal transport at high temperature, and calculated Fe:MoS2's thermal transport by density theory function. These findings will shed light on the thermal management and thermoelectric designs for Fe:MoS2 based nano and quantum electronic devices.
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Submitted 8 December, 2024;
originally announced December 2024.
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Tunable Magnon-Photon Coupling by Magnon Band Gap in a Layered Hybrid Perovskite Antiferromagnet
Authors:
Yi Li,
Timothy Draher,
Andrew H. Comstock,
Yuzan Xiong,
Md Azimul Haque,
Elham Easy,
Jiang-Chao Qian,
Tomas Polakovic,
John E. Pearson,
Ralu Divan,
Jian-Min Zuo,
Xian Zhang,
Ulrich Welp,
Wai-Kwong Kwok,
Axel Hoffmann,
Joseph M. Luther,
Matthew C. Beard,
Dali Sun,
Wei Zhang,
Valentine Novosad
Abstract:
Tunability of coherent coupling between fundamental excitations is an important prerequisite for expanding their functionality in hybrid quantum systems. In hybrid magnonics, the dipolar interaction between magnon and photon usually persists and cannot be switched off. Here, we demonstrate this capability by coupling a superconducting resonator to a layered hybrid perovskite antiferromagnet, which…
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Tunability of coherent coupling between fundamental excitations is an important prerequisite for expanding their functionality in hybrid quantum systems. In hybrid magnonics, the dipolar interaction between magnon and photon usually persists and cannot be switched off. Here, we demonstrate this capability by coupling a superconducting resonator to a layered hybrid perovskite antiferromagnet, which exhibits a magnon band gap due to its intrinsic Dzyaloshinskii-Moriya interaction. The pronounced temperature sensitivity of the magnon band gap location allows us to set the photon mode within the gap and to disable magnon-photon hybridization. When the resonator mode falls into the magnon band gap, the resonator damping rate increases due to the nonzero coupling to the detuned magnon mode. This phenomena can be used to quantify the magnon band gap using an analytical model. Our work brings new opportunities in controlling coherent information processing with quantum properties in complex magnetic materials.
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Submitted 26 July, 2023;
originally announced July 2023.
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Thermal Conductivities and Interfacial Thermal Conductance of 1- to 3-Layer WSe$_2$
Authors:
Elham Easy,
Yuan Gao,
Yingtao Wang,
Dingkai Yan,
Seyed M. Goushehgir,
Eui-Hyeok Yang,
Baoxing Xu,
Xian Zhang
Abstract:
Atomically thin materials such as graphene and semiconducting transition metal dichalcogenides have attracted extensive interest in recent years, motivating investigation into multiple properties. In this work, we used the opto thermal Raman technique to measure the thermal transport properties of a popular TMDC material WSe$_2$, in single atomic layer, bilayer, and trilayer forms.
Atomically thin materials such as graphene and semiconducting transition metal dichalcogenides have attracted extensive interest in recent years, motivating investigation into multiple properties. In this work, we used the opto thermal Raman technique to measure the thermal transport properties of a popular TMDC material WSe$_2$, in single atomic layer, bilayer, and trilayer forms.
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Submitted 7 March, 2021; v1 submitted 30 October, 2020;
originally announced November 2020.