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Showing 1–1 of 1 results for author: Mu, H M

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  1. arXiv:2104.09127  [pdf

    cond-mat.mtrl-sci

    Field-induced metal-to-insulator transition and colossal anisotropic magnetoresistance in a nearly Dirac material EuMnSb$_2$

    Authors: Z. L. Sun, A. F. Wang, H. M. Mu, H. H. Wang, Z. F. Wang, T. Wu, Z. Y. Wang, X. Y. Zhou, X. H. Chen

    Abstract: How to realize applicably appreciated functionalities based on the coupling between charge and spin degrees of freedom is still a challenge in the field of spintronics. For example, anisotropic magnetoresistance (AMR) effect is utilized to read out the information stored by various magnetic structures, which usually originates from atomic spin-orbit coupling (SOC). However, the application of AMR… ▽ More

    Submitted 19 April, 2021; originally announced April 2021.