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Stationary optomechanical entanglement between a mechanical oscillator and its measurement apparatus
Authors:
C. Gut,
K. Winkler,
J. Hoelscher-Obermaier,
S. G. Hofer,
R. Moghadas Nia,
N. Walk,
A. Steffens,
J. Eisert,
W. Wieczorek,
J. A. Slater,
M. Aspelmeyer,
K. Hammerer
Abstract:
We provide an argument to infer stationary entanglement between light and a mechanical oscillator based on continuous measurement of light only. We propose an experimentally realizable scheme involving an optomechanical cavity driven by a resonant, continuous-wave field operating in the non-sideband-resolved regime. This corresponds to the conventional configuration of an optomechanical position o…
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We provide an argument to infer stationary entanglement between light and a mechanical oscillator based on continuous measurement of light only. We propose an experimentally realizable scheme involving an optomechanical cavity driven by a resonant, continuous-wave field operating in the non-sideband-resolved regime. This corresponds to the conventional configuration of an optomechanical position or force sensor. We show analytically that entanglement between the mechanical oscillator and the output field of the optomechanical cavity can be inferred from the measurement of squeezing in (generalized) Einstein-Podolski-Rosen quadratures of suitable temporal modes of the stationary light field. Squeezing can reach levels of up to 50% of noise reduction below shot noise in the limit of large quantum cooperativity. Remarkably, entanglement persists even in the opposite limit of small cooperativity. Viewing the optomechanical device as a position sensor, entanglement between mechanics and light is an instance of object-apparatus entanglement predicted by quantum measurement theory.
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Submitted 13 August, 2020; v1 submitted 3 December, 2019;
originally announced December 2019.
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Observation of generalized optomechanical coupling and cooling on cavity resonance
Authors:
Andreas Sawadsky,
Henning Kaufer,
Ramon Moghadas Nia,
Sergey P. Tarabrin,
Farid Ya. Khalili,
Klemens Hammerer,
Roman Schnabel
Abstract:
Optomechanical coupling between a light field and the motion of a cavity mirror via radiation pressure plays an important role for the exploration of macroscopic quantum physics and for the detection of gravitational waves (GWs). It has been used to cool mechanical oscillators into their quantum ground states and has been considered to boost the sensitivity of GW detectors, e.g. via the optical sp…
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Optomechanical coupling between a light field and the motion of a cavity mirror via radiation pressure plays an important role for the exploration of macroscopic quantum physics and for the detection of gravitational waves (GWs). It has been used to cool mechanical oscillators into their quantum ground states and has been considered to boost the sensitivity of GW detectors, e.g. via the optical spring effect. Here, we present the experimental characterization of generalized, that is, dispersive and dissipative optomechanical coupling, with a macroscopic (1.5mm)^2-sized silicon nitride (SiN) membrane in a cavity-enhanced Michelson-type interferometer. We report for the first time strong optomechanical cooling based on dissipative coupling, even on cavity resonance, in excellent agreement with theory. Our result will allow for new experimental regimes in macroscopic quantum physics and GW detection.
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Submitted 26 January, 2015; v1 submitted 11 September, 2014;
originally announced September 2014.
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Tensile strained $In_{x}Ga_{1-x}P$ membranes for cavity optomechanics
Authors:
G. D. Cole,
P. -L. Yu,
C. Gärtner,
K. Siquans,
R. Moghadas Nia,
J. Schmöle,
J. Hoelscher-Obermaier,
T. P. Purdy,
W. Wieczorek,
C. A. Regal,
M. Aspelmeyer
Abstract:
We investigate the optomechanical properties of tensile-strained ternary InGaP nanomembranes grown on GaAs. This material system combines the benefits of highly strained membranes based on stoichiometric silicon nitride, with the unique properties of thin-film semiconductor single crystals, as previously demonstrated with suspended GaAs. Here we employ lattice mismatch in epitaxial growth to impar…
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We investigate the optomechanical properties of tensile-strained ternary InGaP nanomembranes grown on GaAs. This material system combines the benefits of highly strained membranes based on stoichiometric silicon nitride, with the unique properties of thin-film semiconductor single crystals, as previously demonstrated with suspended GaAs. Here we employ lattice mismatch in epitaxial growth to impart an intrinsic tensile strain to a monocrystalline thin film (approximately 30 nm thick). These structures exhibit mechanical quality factors of 2*10^6 or beyond at room temperature and 17 K for eigenfrequencies up to 1 MHz, yielding Q*f products of 2*10^12 Hz for a tensile stress of ~170 MPa. Incorporating such membranes in a high finesse Fabry-Perot cavity, we extract an upper limit to the total optical loss (including both absorption and scatter) of 40 ppm at 1064 nm and room temperature. Further reductions of the In content of this alloy will enable tensile stress levels of 1 GPa, with the potential for a significant increase in the Q*f product, assuming no deterioration in the mechanical loss at this composition and strain level. This materials system is a promising candidate for the integration of strained semiconductor membrane structures with low-loss semiconductor mirrors and for realizing stacks of membranes for enhanced optomechanical coupling.
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Submitted 31 March, 2014;
originally announced April 2014.