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Enhanced tunability of two-dimensional electron gas on SrTiO3 through heterostructuring
Authors:
Hyang Keun Yoo,
Luca Moreschini,
Andrew L. Walter,
Aaron Bostwick,
Karsten Horn,
Eli Rotenberg,
Young Jun Chang
Abstract:
Two-dimensional electron gases (2DEGs) on the SrTiO3 (STO) surface or in STO-based heterostructures have exhibited many intriguing phenomena, which are strongly dependent on the 2DEG-carrier density. We report that the tunability of the 2DEG-carrier density is significantly enhanced by adding a monolayer LaTiO3 (LTO) onto the STO. Ultraviolet (UV) irradiation induced maximum carrier density of the…
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Two-dimensional electron gases (2DEGs) on the SrTiO3 (STO) surface or in STO-based heterostructures have exhibited many intriguing phenomena, which are strongly dependent on the 2DEG-carrier density. We report that the tunability of the 2DEG-carrier density is significantly enhanced by adding a monolayer LaTiO3 (LTO) onto the STO. Ultraviolet (UV) irradiation induced maximum carrier density of the 2DEG in LTO/STO is increased by a factor of ~4 times, compared to that of the bare STO. By oxygen gas exposure, it becomes 10 times smaller than that of the bare STO. This enhanced tunability is attributed to the drastic surface property change of a polar LTO layer by UV irradiation and O2 exposure. This indicates that the 2DEG controllability in LTO/STO is more reliable than that on the bare STO driven by defects, such an oxygen vacancy.
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Submitted 12 May, 2021;
originally announced May 2021.
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Influence of interface dipole layers on the performance of graphene field effect transistors
Authors:
Naoka Nagamura,
Hirokazu Fukidome,
Kosuke Nagashio,
Koji Horiba,
Takayuki Ide,
Kazutoshi Funakubo,
Keiichiro Tashima,
Akira Toriumi,
Maki Suemitsu,
Karsten Horn,
Masaharu Oshima
Abstract:
The linear band dispersion of graphene's bands near the Fermi level gives rise to its unique electronic properties, such as a giant carrier mobility, and this has triggered extensive research in applications, such as graphene field-effect transistors (GFETs). However, GFETs generally exhibit a device performance much inferior compared to the expected one. This has been attributed to a strong depen…
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The linear band dispersion of graphene's bands near the Fermi level gives rise to its unique electronic properties, such as a giant carrier mobility, and this has triggered extensive research in applications, such as graphene field-effect transistors (GFETs). However, GFETs generally exhibit a device performance much inferior compared to the expected one. This has been attributed to a strong dependence of the electronic properties of graphene on the surrounding interfaces. Here we study the interface between a graphene channel and SiO$_{2}$, and by means of photoelectron spectromicroscopy achieve a detailed determination of the course of band alignment at the interface. Our results show that the electronic properties of graphene are modulated by a hydrophilic SiO$_{2}$ surface, but not by a hydrophobic one. By combining photoelectron spectromicroscopy with GFET transport property characterization, we demonstrate that the presence of electrical dipoles in the interface, which reflects the SiO$_{2}$ surface electrochemistry, determines the GFET device performance. A hysteresis in the resistance vs. gate voltage as a function of polarity is ascribed to a reversal of the dipole layer by the gate voltage. These data pave the way for GFET device optimization.
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Submitted 7 July, 2019;
originally announced July 2019.
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Electronic structure and magnetic properties of the graphene/Ni3Mn/Ni(111) trilayer
Authors:
Elena Voloshina,
Qilin Guo,
Beate Paulus,
Stefan Böttcher,
Hendrik Vita,
Karsten Horn,
Changbao Zhao,
Yi Cui,
Yuriy Dedkov
Abstract:
Experimental and theoretical studies of manganese deposition on graphene/Ni(111) shows that a thin ferromagnetic Ni3Mn layer, which is protected by the graphene overlayer, is formed upon Mn intercalation. The electronic bands of graphene are affected by Ni3Mn interlayer formation through a slight reduction of n-type doping compared to graphene/Ni(111) and a suppression of the interface states char…
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Experimental and theoretical studies of manganese deposition on graphene/Ni(111) shows that a thin ferromagnetic Ni3Mn layer, which is protected by the graphene overlayer, is formed upon Mn intercalation. The electronic bands of graphene are affected by Ni3Mn interlayer formation through a slight reduction of n-type doping compared to graphene/Ni(111) and a suppression of the interface states characteristic of graphene/Ni(111). Our DFT-based theoretical analysis of interface geometric, electronic, and magnetic structure gives strong support to our interpretation of the experimental scanning tunneling microscopy, low energy electron diffraction, and photoemission results, and shows that the magnetic structure of graphene is strongly influenced by Ni3Mn formation.
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Submitted 6 February, 2019;
originally announced February 2019.
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Understanding the origin of band gap formation in graphene on metals: graphene on Cu/Ir(111)
Authors:
H. Vita,
S. Boettcher,
K. Horn,
E. N. Voloshina,
R. E. Ovcharenko,
Th. Kampen,
A. Thissen,
Yu. S. Dedkov
Abstract:
Understanding the nature of the interaction at the graphene/metal interfaces is the basis for graphene-based electron- and spin-transport devices. Here we investigate the hybridization between graphene- and metal-derived electronic states by studying the changes induced through intercalation of a pseudomorphic monolayer of Cu in between graphene and Ir(111), using scanning tunnelling microscopy an…
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Understanding the nature of the interaction at the graphene/metal interfaces is the basis for graphene-based electron- and spin-transport devices. Here we investigate the hybridization between graphene- and metal-derived electronic states by studying the changes induced through intercalation of a pseudomorphic monolayer of Cu in between graphene and Ir(111), using scanning tunnelling microscopy and photoelectron spectroscopy in combination with density functional theory calculations. We observe the modifications in the band structure by the intercalation process and its concomitant changes in the charge distribution at the interface. Through a state-selective analysis of band hybridization, we are able to determine their contributions to the valence band of graphene giving rise to the gap opening. Our methodology reveals the mechanisms that are responsible for the modification of the electronic structure of graphene at the Dirac point, and permits to predict the electronic structure of other graphene-metal interfaces.
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Submitted 6 June, 2014;
originally announced June 2014.
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Small scale rotational disorder observed in epitaxial graphene on SiC(0001)
Authors:
Andrew L. Walter,
Aaron Bostwick,
Florian Speck,
Markus Ostler,
Keun Su Kim,
Young Jun Chang,
Luca Moreschini,
Davide Innocenti,
Thomas Seyller,
Karsten Horn,
Eli Rotenberg
Abstract:
Interest in the use of graphene in electronic devices has motivated an explosion in the study of this remarkable material. The simple, linear Dirac cone band structure offers a unique possibility to investigate its finer details by angle-resolved photoelectron spectroscopy (ARPES). Indeed, ARPES has been performed on graphene grown on metal substrates but electronic applications require an insulat…
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Interest in the use of graphene in electronic devices has motivated an explosion in the study of this remarkable material. The simple, linear Dirac cone band structure offers a unique possibility to investigate its finer details by angle-resolved photoelectron spectroscopy (ARPES). Indeed, ARPES has been performed on graphene grown on metal substrates but electronic applications require an insulating substrate. Epitaxial graphene grown by the thermal decomposition of silicon carbide (SiC) is an ideal candidate for this due to the large scale, uniform graphene layers produced. The experimental spectral function of epitaxial graphene on SiC has been extensively studied. However, until now the cause of an anisotropy in the spectral width of the Fermi surface has not been determined. In the current work we show, by comparison of the spectral function to a semi-empirical model, that the anisotropy is due to small scale rotational disorder ($\sim\pm$ 0.15$^{\circ}$) of graphene domains in graphene grown on SiC(0001) samples. In addition to the direct benefit in the understanding of graphene's electronic structure this work suggests a mechanism to explain similar variations in related ARPES data.
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Submitted 21 September, 2012;
originally announced September 2012.
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Structural and electronic properties of the graphene/Al/Ni(111) intercalation-like system
Authors:
E. N. Voloshina,
A. Generalov,
M. Weser,
S. Boettcher,
K. Horn,
Yu. S. Dedkov
Abstract:
Decoupling of the graphene layer from the ferromagnetic substrate via intercalation of sp metal has recently been proposed as an effective way to realize single-layer graphene-based spin-filter. Here, the structural and electronic properties of the prototype system, graphene/Al/Ni(111), are investigated via combination of electron diffraction and spectroscopic methods. These studies are accompanie…
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Decoupling of the graphene layer from the ferromagnetic substrate via intercalation of sp metal has recently been proposed as an effective way to realize single-layer graphene-based spin-filter. Here, the structural and electronic properties of the prototype system, graphene/Al/Ni(111), are investigated via combination of electron diffraction and spectroscopic methods. These studies are accompanied by state-of-the-art electronic structure calculations. The properties of this prospective Al-intercalation-like system and its possible implementations in future graphene-based devices are discussed.
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Submitted 15 August, 2011;
originally announced August 2011.
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Electronic structure of graphene on single crystal copper substrates
Authors:
Andrew L. Walter,
Shu Nie,
Aaron Bostwick,
Keun Su Kim,
Luca Moreschini,
Young Jun Chang,
Davide Innocenti,
Karsten Horn,
Kevin F. McCarty,
Eli Rotenberg
Abstract:
The electronic structure of graphene on Cu(111) and Cu(100) single crystals is investigated using low energy electron microscopy, low energy electron diffraction and angle resolved photoemission spectroscopy. On both substrates the graphene is rotationally disordered and interactions between the graphene and substrate lead to a shift in the Dirac crossing of $\sim$ -0.3 eV and the opening of a…
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The electronic structure of graphene on Cu(111) and Cu(100) single crystals is investigated using low energy electron microscopy, low energy electron diffraction and angle resolved photoemission spectroscopy. On both substrates the graphene is rotationally disordered and interactions between the graphene and substrate lead to a shift in the Dirac crossing of $\sim$ -0.3 eV and the opening of a $\sim$ 250 meV gap. Exposure of the samples to air resulted in intercalation of oxygen under the graphene on Cu(100), which formed a ($\sqrt{2} \times 2\sqrt{2}$)R45$^{\rm o}$ superstructure. The effect of this intercalation on the graphene $π$ bands is to increase the offset of the Dirac crossing ($\sim$ -0.6 eV) and enlarge the gap ($\sim$ 350 meV). No such effect is observed for the graphene on Cu(111) sample, with the surface state at $Γ$ not showing the gap associated with a surface superstructure. The graphene film is found to protect the surface state from air exposure, with no change in the effective mass observed.
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Submitted 9 August, 2011;
originally announced August 2011.
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Effective screening and the plasmaron bands in Graphene
Authors:
Andrew L. Walter,
Aaron Bostwick,
Ki-Joon Jeon,
Florian Speck,
Markus Ostler,
Thomas Seyller,
Luca Moreschini,
Young Jun Chang,
Marco Polini,
Reza Asgari,
Allan H. MacDonald,
Karsten Horn,
Eli Rotenberg
Abstract:
Electron-plasmon coupling in graphene has recently been shown to give rise to a "plasmaron" quasiparticle excitation. The strength of this coupling has been predicted to depend on the effective screening, which in turn is expected to depend on the dielectric environment of the graphene sheet. Here we compare the strength of enviromental screening for graphene on four different substrates by evalua…
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Electron-plasmon coupling in graphene has recently been shown to give rise to a "plasmaron" quasiparticle excitation. The strength of this coupling has been predicted to depend on the effective screening, which in turn is expected to depend on the dielectric environment of the graphene sheet. Here we compare the strength of enviromental screening for graphene on four different substrates by evaluating the separation of the plasmaron bands from the hole bands using Angle Resolved PhotoEmission Spectroscopy. Comparison with G0W-RPA predictions are used to determine the effective dielectric constant of the underlying substrate layer. We also show that plasmaron and electronic properties of graphene can be independently manipulated, an important aspect of a possible use in "plasmaronic" devices.
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Submitted 21 July, 2011;
originally announced July 2011.
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Highly p-doped graphene obtained by fluorine intercalation
Authors:
Andrew L. Walter,
Ki-Joon Jeon,
Aaron Bostwick,
Florian Speck,
Markus Ostler,
Thomas Seyller,
Luca Moreschini,
Yong Su Kim,
Young Jun Chang,
Karsten Horn,
Eli Rotenberg
Abstract:
We present a method for decoupling epitaxial graphene grown on SiC(0001) by intercalation of a layer of fluorine at the interface. The fluorine atoms do not enter into a covalent bond with graphene, but rather saturate the substrate Si bonds. This configuration of the fluorine atoms induces a remarkably large hole density of p \approx 4.5 \times 1013 cm-2, equivalent to the location of the Fermi l…
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We present a method for decoupling epitaxial graphene grown on SiC(0001) by intercalation of a layer of fluorine at the interface. The fluorine atoms do not enter into a covalent bond with graphene, but rather saturate the substrate Si bonds. This configuration of the fluorine atoms induces a remarkably large hole density of p \approx 4.5 \times 1013 cm-2, equivalent to the location of the Fermi level at 0.79 eV above the Dirac point ED .
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Submitted 14 April, 2011;
originally announced April 2011.
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Graphene on ferromagnetic surfaces and its functionalization with water and ammonia
Authors:
S. Boettcher,
M. Weser,
Yu. S. Dedkov,
K. Horn,
E. N. Voloshina,
B. Paulus
Abstract:
Here we present an angle-resolved photoelectron spectroscopy (ARPES), x-ray absorption spec-troscopy (XAS), and density-functional theory (DFT) investigations of water and ammonia ad-sorption on graphene/Ni(111). Our results on graphene/Ni(111) reveal the existence of interface states, originating from the strong hybridization of the graphene π and spin-polarized Ni 3d valence band states. ARPES a…
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Here we present an angle-resolved photoelectron spectroscopy (ARPES), x-ray absorption spec-troscopy (XAS), and density-functional theory (DFT) investigations of water and ammonia ad-sorption on graphene/Ni(111). Our results on graphene/Ni(111) reveal the existence of interface states, originating from the strong hybridization of the graphene π and spin-polarized Ni 3d valence band states. ARPES and XAS data of the H2O (NH3)/graphene/Ni(111) system give an information about the kind of interaction between adsorbed molecules and graphene on Ni(111). The presented experimental data are compared with the results obtained in the framework of the DFT approach.
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Submitted 8 January, 2011;
originally announced January 2011.
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Electronic structure and magnetic properties of the graphene/Fe/Ni(111) intercalation-like system
Authors:
M. Weser,
E. N. Voloshina,
K. Horn,
Yu. S. Dedkov
Abstract:
The electronic structure and magnetic properties of the graphene/Fe/Ni(111) system were investigated via combination of the density functional theory calculations and electron-spectroscopy methods. This system was prepared via intercalation of thin Fe layer (1 ML) underneath graphene on Ni(111) and its inert properties were verified by means of photoelectron spectroscopy. Intercalation of iron in…
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The electronic structure and magnetic properties of the graphene/Fe/Ni(111) system were investigated via combination of the density functional theory calculations and electron-spectroscopy methods. This system was prepared via intercalation of thin Fe layer (1 ML) underneath graphene on Ni(111) and its inert properties were verified by means of photoelectron spectroscopy. Intercalation of iron in the space between graphene and Ni(111) changes drastically the magnetic response from the graphene layer that is explained by the formation of the highly spin-polarized $3d_{z^2}$ quantum-well state in the thin iron layer.
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Submitted 4 January, 2011;
originally announced January 2011.
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Spatial corrugation and bonding of single layer graphene on Rh(111)
Authors:
M. Fonin,
M. Sicot,
O. Zander,
S. Bouvron,
Ph. Leicht,
U. Rüdiger,
M. Weser,
Yu. S. Dedkov,
K. Horn
Abstract:
Topographic scanning tunneling microscopy (STM) images of epitaxial single layer graphene on the Rh(111) surface reveal that extended single crystalline graphene domains are produced without any defects on a large scale. High resolution imaging shows that the moiré structure resulting from the lattice mismatch between the Rh(111) substrate and graphene is highly corrugated, containing regions of a…
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Topographic scanning tunneling microscopy (STM) images of epitaxial single layer graphene on the Rh(111) surface reveal that extended single crystalline graphene domains are produced without any defects on a large scale. High resolution imaging shows that the moiré structure resulting from the lattice mismatch between the Rh(111) substrate and graphene is highly corrugated, containing regions of an additional spatial modulation in the moiré supercell compared with those previously reported for graphene on Ir(111) or graphene on Ru(0001). These areas, which correspond to the "bridge" regions of the moiré structure appear as depressions in STM images indicating a strong orbital hybridization between the graphene layer and the metallic substrate. Valence-band photoemission confirms the strong hybridization between graphene and Rh(111) which leads to the pronounced corrugation of the graphene layer. Our findings underline the importance of considering substrate effects in epitaxially grown graphene layers for the design of graphene-based nanoscale systems.
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Submitted 7 October, 2010;
originally announced October 2010.
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Enhanced electron correlations, local moments, and Curie temperature in strained MnAs nanocrystals embedded in GaAs
Authors:
M. Moreno,
J. I. Cerdá,
K. H. Ploog,
K. Horn
Abstract:
We have studied the electronic structure of hexagonal MnAs, as epitaxial continuous film on GaAs(001) and as nanocrystals embedded in GaAs, by Mn 2p core-level photoemission spectroscopy. Configuration-interaction analyses based on a cluster model show that the ground state of the embedded MnAs nanocrystals is dominated by a d5 configuration that maximizes the local Mn moment. Nanoscaling and stra…
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We have studied the electronic structure of hexagonal MnAs, as epitaxial continuous film on GaAs(001) and as nanocrystals embedded in GaAs, by Mn 2p core-level photoemission spectroscopy. Configuration-interaction analyses based on a cluster model show that the ground state of the embedded MnAs nanocrystals is dominated by a d5 configuration that maximizes the local Mn moment. Nanoscaling and strain significantly alter the properties of MnAs. Internal strain in the nanocrystals results in reduced p-d hybridization and enhanced ionic character of the Mn-As bonding interactions. The spatial confinement and reduced p-d hybridization in the nanocrystals lead to enhanced d-electron localization, triggering d-d electron correlations and enhancing local Mn moments. These changes in the electronic structure of MnAs have an advantageous effect on the Curie temperature of the nanocrystals, which is measured to be remarkably higher than that of bulk MnAs.
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Submitted 4 August, 2011; v1 submitted 4 March, 2010;
originally announced March 2010.
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Structure and Correlation Effects in Semiconducting SrTiO$_{3}$
Authors:
Young Jun Chang,
Aaron Bostwick,
Yong Su Kim,
Karsten Horn,
Eli Rotenberg
Abstract:
We have investigated the effects of structure change and electron correlation on SrTiO$_{3}$ single crystals using angle-resolved photoemission spectroscopy. We show that the cubic to tetragonal phase transition at 105$^\circ$K is manifested by a charge transfer from in-plane ($d_{yz}$ and $d_{zx}$) bands to out-of-plane ($d_{xy}$) band, which is opposite to the theoretical predictions. Along th…
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We have investigated the effects of structure change and electron correlation on SrTiO$_{3}$ single crystals using angle-resolved photoemission spectroscopy. We show that the cubic to tetragonal phase transition at 105$^\circ$K is manifested by a charge transfer from in-plane ($d_{yz}$ and $d_{zx}$) bands to out-of-plane ($d_{xy}$) band, which is opposite to the theoretical predictions. Along this second-order phase transition, we find a smooth evolution of the quasiparticle strength and effective masses. The in-plane band exhibits a peak-dip-hump lineshape, indicating a high degree of correlation on a relatively large (170 meV) energy scale, which is attributed to the polaron formation.
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Submitted 8 February, 2010; v1 submitted 4 February, 2010;
originally announced February 2010.
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Induced magnetism of carbon atoms at the graphene/Ni(111) interface
Authors:
M. Weser,
Y. Rehder,
Yu. S. Dedkov,
K. Horn,
M. Sicot,
M. Fonin,
A. Preobtajenski,
E. N. Voloshina
Abstract:
We report an element-specific investigation of electronic and magnetic properties of the graphene/Ni(111) system. Using magnetic circular dichroism, the occurrence of an induced magnetic moment of the carbon atoms in the graphene layer aligned parallel to the Ni 3d magnetization is observed. We attribute this magnetic moment to the strong hybridization between C $π$ and Ni 3d valence band states…
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We report an element-specific investigation of electronic and magnetic properties of the graphene/Ni(111) system. Using magnetic circular dichroism, the occurrence of an induced magnetic moment of the carbon atoms in the graphene layer aligned parallel to the Ni 3d magnetization is observed. We attribute this magnetic moment to the strong hybridization between C $π$ and Ni 3d valence band states. The net magnetic moment of carbon in the graphene layer is estimated to be in the range of $0.05-0.1 μ_B$ per atom.
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Submitted 12 January, 2010; v1 submitted 24 July, 2009;
originally announced July 2009.
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Quasiparticle Transformation During a Metal-Insulator Transition in Graphene
Authors:
Aaron Bostwick,
Jessica L. McChesney,
Konstantin Emtsev,
Thomas Seyller,
Karsten Horn,
Stephan D. Kevan,
Eli Rotenberg
Abstract:
Here we show, with simultaneous transport and photoemission measurements, that the graphene terminated SiC(0001) surface undergoes a metal-insulator transition (MIT) upon dosingwith small amounts of atomic hydrogen. We find the room temperature resistance increases by about 4 orders of magnitude, a transition accompanied by anomalies in the momentum-resolved spectral function including a non-Fer…
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Here we show, with simultaneous transport and photoemission measurements, that the graphene terminated SiC(0001) surface undergoes a metal-insulator transition (MIT) upon dosingwith small amounts of atomic hydrogen. We find the room temperature resistance increases by about 4 orders of magnitude, a transition accompanied by anomalies in the momentum-resolved spectral function including a non-Fermi Liquid behaviour and a breakdown of the quasiparticle picture. These effects are discussed in terms of a possible transition to a strongly (Anderson) localized ground state.
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Submitted 15 April, 2009;
originally announced April 2009.
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Quasiperiodic free electron metal layers
Authors:
A. K. Shukla,
R. S. Dhaka,
S. W. Dsouza,
Sanjay Singh,
D. Wu,
T. A. Lograsso,
M. Krajci,
J. Hafner,
K. Horn,
S. R. Barman
Abstract:
Using electron diffraction, we show that free electron metals such as sodium and potassium form a highly regular quasiperiodic monolayer on the fivefold surface of icosahedral Al-Pd-Mn and that the quasiperiodicity propagates up to the second layer in sodium. Our photoelectron spectroscopy results show that the quasicrystalline alkali metal adlayer does not exhibit a pseudogap near the Fermi lev…
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Using electron diffraction, we show that free electron metals such as sodium and potassium form a highly regular quasiperiodic monolayer on the fivefold surface of icosahedral Al-Pd-Mn and that the quasiperiodicity propagates up to the second layer in sodium. Our photoelectron spectroscopy results show that the quasicrystalline alkali metal adlayer does not exhibit a pseudogap near the Fermi level, thought to be charactersitic for the electronic structure of quasicrystalline materials. Calculations based on density functional theory provide a model structure for the quasicrystalline alkali metal monolayer and confirm the absence of a pseudogap.
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Submitted 1 April, 2009;
originally announced April 2009.
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Influence of the substrate lattice structure on the formation of Quantum Well States in thin In and Pb films on silicon
Authors:
J H Dil,
B Huelsen,
T U Kampen,
P Kratzer,
K Horn
Abstract:
The substrate lattice structure may have a considerable influence on the formation of quantum well states in a metal overlayer material. Here we study three model systems using angle resolved photoemission and low energy electron diffraction: indium films on Si(111) and indium and lead on Si(100). Data are compared with theoretical predictions based on density functional theory. We find that the…
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The substrate lattice structure may have a considerable influence on the formation of quantum well states in a metal overlayer material. Here we study three model systems using angle resolved photoemission and low energy electron diffraction: indium films on Si(111) and indium and lead on Si(100). Data are compared with theoretical predictions based on density functional theory. We find that the interaction between the substrate and the overlayer strongly influences the formation of quantum well states; indium layers only exhibit well defined quantum well states when the layer relaxes from an initial face-centered cubic to the bulk body-centered tetragonal lattice structure. For Pb layers on Si(100) a change in growth orientation inhibits the formations of quantum well states in films thicker than 2 ML.
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Submitted 4 November, 2008;
originally announced November 2008.
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Self-consistent analysis of electron-phonon coupling parameters of graphene
Authors:
Jessica L. McChesney,
Aaron Bostwick,
Taisuke Ohta,
Konstantin Emtsev,
Thomas Seyller,
Karsten Horn,
Eli Rotenberg
Abstract:
We present a self-consistent analysis of the photoemission spectral function A(k, w) of graphene monolayers grown epitaxially on SiC(0001). New information derived from spectral intensity anomalies (in addition to linewidths and peak positions) confirms that sizeable kinks in the electronic dispersion at the Dirac energy ED and near the Fermi level EF arise from many-body interactions, not singl…
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We present a self-consistent analysis of the photoemission spectral function A(k, w) of graphene monolayers grown epitaxially on SiC(0001). New information derived from spectral intensity anomalies (in addition to linewidths and peak positions) confirms that sizeable kinks in the electronic dispersion at the Dirac energy ED and near the Fermi level EF arise from many-body interactions, not single-particle effects such as substrate bonding or extra bands. The relative electron-phonon scattering rate from phonons at different energy scales evolves with doping. The electron-phonon coupling strength is extracted and found to be much larger (~3.5-5 times) than predicted.
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Submitted 23 September, 2008;
originally announced September 2008.
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Atmospheric pressure graphitization of SiC(0001)- A route towards wafer-size graphene layers
Authors:
Konstantin V. Emtsev,
Aaron Bostwick,
Karsten Horn,
Johannes Jobst,
Gary L. Kellogg,
Lothar Ley,
Jessica L. McChesney,
Taisuke Ohta,
Sergey A. Reshanov,
Eli Rotenberg,
Andreas K. Schmid,
Daniel Waldmann,
Heiko B. Weber,
Thomas Seyller
Abstract:
We have investigated epitaxial graphene films grown on SiC(0001) by annealing in an atmosphere of Ar instead of vacuum. Using AFM and LEEM we observe a significantly improved surface morphology and graphene domain size. Hall measurements on monolayer graphene films show a carrier mobility of around 1000 cm^2/Vs at room temperature and 2000 cm^2/Vs at 27K. The growth process introduced here estab…
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We have investigated epitaxial graphene films grown on SiC(0001) by annealing in an atmosphere of Ar instead of vacuum. Using AFM and LEEM we observe a significantly improved surface morphology and graphene domain size. Hall measurements on monolayer graphene films show a carrier mobility of around 1000 cm^2/Vs at room temperature and 2000 cm^2/Vs at 27K. The growth process introduced here establishes the synthesis of graphene films on a technologically viable basis.
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Submitted 8 August, 2008;
originally announced August 2008.
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Morphology of graphene thin film growth on SiC(0001)
Authors:
Taisuke Ohta,
Farid El Gabaly,
Aaron Bostwick,
Jessica McChesney,
Konstantin V. Emtsev,
Andreas K. Schmid,
Thomas Seyller,
Karsten Horn,
Eli Rotenberg
Abstract:
Epitaxial films of graphene on SiC(0001) are interesting from a basic physics as well as applications-oriented point of view. Here we study the emerging morphology of in-vacuo prepared graphene films using low energy electron microscopy (LEEM) and angle-resolved photoemission (ARPES). We obtain an identification of single and bilayer of graphene film by comparing the characteristic features in e…
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Epitaxial films of graphene on SiC(0001) are interesting from a basic physics as well as applications-oriented point of view. Here we study the emerging morphology of in-vacuo prepared graphene films using low energy electron microscopy (LEEM) and angle-resolved photoemission (ARPES). We obtain an identification of single and bilayer of graphene film by comparing the characteristic features in electron reflectivity spectra in LEEM to the PI-band structure as revealed by ARPES. We demonstrate that LEEM serves as a tool to accurately determine the local extent of graphene layers as well as the layer thickness.
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Submitted 3 October, 2007;
originally announced October 2007.
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Scanning tunneling spectroscopy of inhomogeneous electronic structure in monolayer and bilayer graphene on SiC
Authors:
Victor W. Brar,
Yuanbo Zhang,
Yossi Yayon,
Aaron Bostwick,
Taisuke Ohta,
Jessica L. McChesney,
Karsten Horn,
Eli Rotenberg,
Michael F. Crommie
Abstract:
We present a scanning tunneling spectroscopy (STS) study of the local electronic structure of single and bilayer graphene grown epitaxially on a SiC(0001) surface. Low voltage topographic images reveal fine, atomic-scale carbon networks, whereas higher bias images are dominated by emergent spatially inhomogeneous large-scale structure similar to a carbon-rich reconstruction of SiC(0001). STS spe…
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We present a scanning tunneling spectroscopy (STS) study of the local electronic structure of single and bilayer graphene grown epitaxially on a SiC(0001) surface. Low voltage topographic images reveal fine, atomic-scale carbon networks, whereas higher bias images are dominated by emergent spatially inhomogeneous large-scale structure similar to a carbon-rich reconstruction of SiC(0001). STS spectroscopy shows a ~100meV gap-like feature around zero bias for both monolayer and bilayer graphene/SiC, as well as significant spatial inhomogeneity in electronic structure above the gap edge. Nanoscale structure at the SiC/graphene interface is seen to correlate with observed electronic spatial inhomogeneity. These results are important for potential devices involving electronic transport or tunneling in graphene/SiC.
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Submitted 12 July, 2007; v1 submitted 26 June, 2007;
originally announced June 2007.
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Symmetry Breaking in Few Layer Graphene Films
Authors:
Aaron Bostwick,
Taisuke Ohta,
Jessica L. McChesney,
Konstantin V. Emtsev,
Thomas Seyller,
Karsten Horn,
Eli Rotenberg
Abstract:
Recently, it was demonstrated that the quasiparticle dynamics, the layer-dependent charge and potential, and the c-axis screening coefficient could be extracted from measurements of the spectral function of few layer graphene films grown epitaxially on SiC using angle-resolved photoemission spectroscopy (ARPES). In this article we review these findings, and present detailed methodology for extra…
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Recently, it was demonstrated that the quasiparticle dynamics, the layer-dependent charge and potential, and the c-axis screening coefficient could be extracted from measurements of the spectral function of few layer graphene films grown epitaxially on SiC using angle-resolved photoemission spectroscopy (ARPES). In this article we review these findings, and present detailed methodology for extracting such parameters from ARPES. We also present detailed arguments against the possibility of an energy gap at the Dirac crossing ED.
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Submitted 25 May, 2007;
originally announced May 2007.
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Massive enhancement of electron-phonon coupling in doped graphene by an electronic singularity
Authors:
Jessica L. McChesney,
Aaron Bostwick,
Taisuke Ohta,
Konstantin V. Emtsev,
Thomas Seyller,
Karsten Horn,
Eli Rotenberg
Abstract:
The nature of the coupling leading to superconductivity in layered materials such as high-Tc superconductors and graphite intercalation compounds (GICs) is still unresolved. In both systems, interactions of electrons with either phonons or other electrons or both have been proposed to explain superconductivity. In the high-Tc cuprates, the presence of a Van Hove singularity (VHS) in the density…
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The nature of the coupling leading to superconductivity in layered materials such as high-Tc superconductors and graphite intercalation compounds (GICs) is still unresolved. In both systems, interactions of electrons with either phonons or other electrons or both have been proposed to explain superconductivity. In the high-Tc cuprates, the presence of a Van Hove singularity (VHS) in the density of states near the Fermi level was long ago proposed to enhance the many-body couplings and therefore may play a role in superconductivity. Such a singularity can cause an anisotropic variation in the coupling strength, which may partially explain the so-called nodal-antinodal dichotomy in the cuprates. Here we show that the topology of the graphene band structure at dopings comparable to the GICs is quite similar to that of the cuprates and that the quasiparticle dynamics in graphene have a similar dichotomy. Namely, the electron-phonon coupling is highly anisotropic, diverging near a saddle point in the graphene electronic band structure. These results support the important role of the VHS in layered materials and the possible optimization of Tc by tuning the VHS with respect to the Fermi level.
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Submitted 22 May, 2007;
originally announced May 2007.
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Role of the electric field in surface electron dynamics above the vacuum level
Authors:
J. I. Pascual,
C. Corriol,
G. Ceballos,
I. Aldazabal,
H. -P. Rust,
K. Horn,
J. M. Pitarke,
P. M. Echenique,
A. Arnau
Abstract:
Scanning tunneling spectroscopy (STS) is used to study the dynamics of hot electrons trapped on a Cu(100) surface in field emission resonances (FER) above the vacuum level. Differential conductance maps show isotropic electron interference wave patterns around defects whenever their energy lies within a surface projected band gap. Their Fourier analysis reveals a broad wave vector distribution,…
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Scanning tunneling spectroscopy (STS) is used to study the dynamics of hot electrons trapped on a Cu(100) surface in field emission resonances (FER) above the vacuum level. Differential conductance maps show isotropic electron interference wave patterns around defects whenever their energy lies within a surface projected band gap. Their Fourier analysis reveals a broad wave vector distribution, interpreted as due to the lateral acceleration of hot electrons in the inhomogeneous tip-induced potential. A line-shape analysis of the characteristic constant-current conductance spectra permits to establish the relation between apparent width of peaks and intrinsic line-width of FERs, as well as the identification of the different broadening mechanisms.
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Submitted 26 March, 2007;
originally announced March 2007.
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Interlayer interaction and electronic screening in multilayer graphene
Authors:
Taisuke Ohta,
Aaron Bostwick,
J. L. McChesney,
Thomas Seyller,
Karsten Horn,
Eli Rotenberg
Abstract:
The unusual transport properties of graphene are the direct consequence of a peculiar bandstructure near the Dirac point. We determine the shape of the pi bands and their characteristic splitting, and the transition from a pure 2D to quasi-2D behavior for 1 to 4 layers of graphene by angle-resolved photoemission. By exploiting the sensitivity of the pi bands to the electronic potential, we deriv…
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The unusual transport properties of graphene are the direct consequence of a peculiar bandstructure near the Dirac point. We determine the shape of the pi bands and their characteristic splitting, and the transition from a pure 2D to quasi-2D behavior for 1 to 4 layers of graphene by angle-resolved photoemission. By exploiting the sensitivity of the pi bands to the electronic potential, we derive the layer-dependent carrier concentration, screening length and strength of interlayer interaction by comparison with tight binding calculations, yielding a comprehensive description of multilayer graphene's electronic structure.
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Submitted 6 December, 2006;
originally announced December 2006.
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Experimental Determination of the Spectral Function of Graphene
Authors:
Aaron Bostwick,
Taisuke Ohta,
Thomas Seyller,
K. Horn,
Eli Rotenberg
Abstract:
A number of interesting properties of graphene and graphite are postulated to derive from the peculiar bandstructure of graphene. This bandstructure consists of conical electron and hole pockets that meet at a single point in momentum (k) space--the Dirac crossing, at energy $E_{D} = \hbar ω_{D}$. Direct investigations of the accuracy of this bandstructure, the validity of the quasiparticle pict…
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A number of interesting properties of graphene and graphite are postulated to derive from the peculiar bandstructure of graphene. This bandstructure consists of conical electron and hole pockets that meet at a single point in momentum (k) space--the Dirac crossing, at energy $E_{D} = \hbar ω_{D}$. Direct investigations of the accuracy of this bandstructure, the validity of the quasiparticle picture, and the influence of many-body interactions on the electronic structure have not been addressed for pure graphene by experiment to date. Using angle resolved photoelectron spectroscopy (ARPES), we find that the expected conical bands are distorted by strong electron-electron, electron-phonon, and electron-plasmon coupling effects. The band velocity at $E_{F}$ and the Dirac crossing energy $E_{D}$ are both renormalized by these many-body interactions, in analogy with mass renormalization by electron-boson coupling in ordinary metals. These results are of importance not only for graphene but also graphite and carbon nanotubes which have similar bandstructures.
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Submitted 26 September, 2006;
originally announced September 2006.
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The role of the spin in quasiparticle interference
Authors:
J. I. Pascual,
G. Bihlmayer,
Yu. M. Koroteev,
H. -P. Rust,
G. Ceballos,
M. Hansmann,
K. Horn,
E. V. Chulkov,
S. Bluegel,
P. M. Echenique,
Ph. Hofmann
Abstract:
Quasiparticle interference patterns measured by scanning tunneling microscopy (STM) can be used to study the local electronic structure of metal surfaces and high temperature superconductors. Here, we show that even in non-magnetic systems the spin of the quasiparticles can have a profound effect on the interference patterns. On Bi(110), where the surface state bands are not spin-degenerate, the…
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Quasiparticle interference patterns measured by scanning tunneling microscopy (STM) can be used to study the local electronic structure of metal surfaces and high temperature superconductors. Here, we show that even in non-magnetic systems the spin of the quasiparticles can have a profound effect on the interference patterns. On Bi(110), where the surface state bands are not spin-degenerate, the patterns are not related to the dispersion of the electronic states in a simple way. In fact, the features which are expected for the spin-independent situation are absent and the observed interference patterns can only be interpreted by taking spin-conserving scattering events into account.
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Submitted 21 July, 2004;
originally announced July 2004.
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Symmetric Versus Nonsymmetric Structure of the Phosphorus Vacancy on InP(110)
Authors:
Ph. Ebert,
K. Urban,
L. Aballe,
C. H. Chen,
K. Horn,
G. Schwarz,
J. Neugebauer,
M. Scheffler
Abstract:
The atomic and electronic structure of positively charged P vacancies on InP(110) surfaces is determined by combining scanning tunneling microscopy, photoelectron spectroscopy, and density-functional theory calculations. The vacancy exhibits a nonsymmetric rebonded atomic configuration with a charge transfer level 0.75+-0.1 eV above the valence band maximum. The scanning tunneling microscopy (ST…
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The atomic and electronic structure of positively charged P vacancies on InP(110) surfaces is determined by combining scanning tunneling microscopy, photoelectron spectroscopy, and density-functional theory calculations. The vacancy exhibits a nonsymmetric rebonded atomic configuration with a charge transfer level 0.75+-0.1 eV above the valence band maximum. The scanning tunneling microscopy (STM) images show only a time average of two degenerate geometries, due to a thermal flip motion between the mirror configurations. This leads to an apparently symmetric STM image, although the ground state atomic structure is nonsymmetric.
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Submitted 8 June, 2000;
originally announced June 2000.