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Coherence-limited digital control of a superconducting qubit using a Josephson pulse generator at 3 K
Authors:
M. A. Castellanos-Beltran,
A. J. Sirois,
L. Howe,
D. I. Olaya,
J. Biesecker,
S. P. Benz,
P. F. Hopkins
Abstract:
Compared to traditional semiconductor control electronics (TSCE) located at room temperature, cryogenic single flux quantum (SFQ) electronics can provide qubit measurement and control alternatives that address critical issues related to scalability of cryogenic quantum processors. Single-qubit control and readout have been demonstrated recently using SFQ circuits coupled to superconducting qubits.…
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Compared to traditional semiconductor control electronics (TSCE) located at room temperature, cryogenic single flux quantum (SFQ) electronics can provide qubit measurement and control alternatives that address critical issues related to scalability of cryogenic quantum processors. Single-qubit control and readout have been demonstrated recently using SFQ circuits coupled to superconducting qubits. Experiments where the SFQ electronics are co-located with the qubit have suffered from excess decoherence and loss due to quasiparticle poisoning of the qubit. A previous experiment by our group showed that moving the control electronics to the 3 K stage of the dilution refrigerator avoided this source of decoherence in a high-coherence 3D transmon geometry. In this paper, we also generate the pulses at the 3 K stage but have optimized the qubit design and control lines for scalable 2D transmon devices. We directly compare the qubit lifetime $T_1$, coherence time $T_2^*$ and gate fidelity when the qubit is controlled by the Josephson pulse generator (JPG) circuit versus the TSCE setup. We find agreement to within the daily fluctuations for $T_1$ and $T_2^*$, and agreement to within 10% for randomized benchmarking. We also performed interleaved randomized benchmarking on individual JPG gates demonstrating an average error per gate of $0.46$% showing good agreement with what is expected based on the qubit coherence and higher-state leakage. These results are an order of magnitude improvement in gate fidelity over our previous work and demonstrate that a Josephson microwave source operated at 3 K is a promising component for scalable qubit control.
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Submitted 8 December, 2025;
originally announced December 2025.
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Picosecond Josephson Samplers: Modeling and Measurements
Authors:
Logan Howe,
Bart van Zeghbroeck,
David Olaya,
John Biesecker,
Charles J. Burroughs,
Samuel P. Benz,
Peter F. Hopkins
Abstract:
Measurement of signals generated by superconducting Josephson junction (JJ) circuits require ultra-fast components located in close proximity to the generating circuitry. We report a detailed study of optimal design criteria for a JJ-based sampler which balances the highest sampler bandwidth (shortest 10\%--90\% rise time) with minimal sampled waveform distortion. We explore the impacts on perform…
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Measurement of signals generated by superconducting Josephson junction (JJ) circuits require ultra-fast components located in close proximity to the generating circuitry. We report a detailed study of optimal design criteria for a JJ-based sampler which balances the highest sampler bandwidth (shortest 10\%--90\% rise time) with minimal sampled waveform distortion. We explore the impacts on performance of a sampler, realized using a single underdamped JJ as the logical sampling element (the comparator), due to the type of signal-comparator coupling scheme that is utilized (galvanic, inductive, or capacitive). In these simulations we emulate the entire waveform reconstruction sampling process, via comparator threshold detection, while sweeping the time location at which the waveform is being sampled. We extract the sampled waveform rise time (or FWHM) as a function of the comparator's Stewart-McCumber parameter and as a function of the coupling strength between the device under test and comparator. Based on our simulation results we design, fabricate, and characterize a cryocooled (3.6 K operating temperature) JJ sampler utilizing the NIST state-of-the-art Nb/amorphous-Si/Nb junctions. We separately sample a step signal and impulse generator co-located on-chip with the comparator and sampling strobe generator by implementing the same binary search comparator threshold detection technique during sampler operation as is used in simulation. With this technique the system is fully-digital and automated and operation of the fabricated device directly mirrors simulation. Our sampler technology shows a 10\%--90\% rise time of 3.3 ps and the capability to measure transient pulse widths of 2.5 ps FWHM. A linear systems analysis of sampled waveforms indicate a 3 dB bandwidth of 225 GHz, but we demonstrate effective measurement of signals well above this -- as high as 600 GHz.
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Submitted 25 March, 2025;
originally announced March 2025.
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Compact Superconducting Kinetic Inductance Traveling Wave Parametric Amplifiers with On-chip rf Components
Authors:
Logan Howe,
Andrea Giachero,
Michael Vissers,
Jordan Wheeler,
Jason Austermann,
Johannes Hubmayr,
Joel Ullom
Abstract:
Quantum computing systems and fundamental physics experiments using superconducting technologies frequently require signal amplification chains operating near the quantum limit of added noise. Both Josephson parametric amplifiers (JPAs) and traveling wave parametric amplifiers (TWPAs) have been used as first-stage amplifiers to enable readout chains operating within a few quanta or less of the qua…
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Quantum computing systems and fundamental physics experiments using superconducting technologies frequently require signal amplification chains operating near the quantum limit of added noise. Both Josephson parametric amplifiers (JPAs) and traveling wave parametric amplifiers (TWPAs) have been used as first-stage amplifiers to enable readout chains operating within a few quanta or less of the quantum limit. These devices are also presently entering the commercial industry. However, nearly all demonstrations and existing products require bulky external microwave components for interconnection and application of requisite biases. These components -- cabling interconnects, bias tees, directional couplers, and diplexers -- increase the overall amplifier footprint, installation complexity, and reduce already limited available cryogenic volumes. Additionally, these components introduce loss and reflections which impact the measurement efficiency and readout system noise performance; thus making it more difficult to operate near the quantum limit.
Here we present the design and validation of microfabricated bias tees and directional couplers for operating three-wave mixing kinetic inductance TWPAs (KITs). We report the performance of KITs integrated with the microfabricated rf components. Using these devices we demonstrate reduction in the amplifier installation footprint by a factor of nearly five and elimination of all external, lossy microwave components previously required to operate a KIT. Our device displays a 2.8 GHz 3 dB bandwidth with a median true gain of 17.5 dB and median system noise of 3.4 quanta. These efforts represent the first full integration of all rf components mandatory for TWPA operation on-chip. Our results mark significant progress towards the miniaturization and simplification of parametric amplifier setups and will aid in their more widespread applicability.
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Submitted 5 March, 2025;
originally announced March 2025.
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High-Efficiency Multilevel Phase Lenses with Nanostructures on Polyimide Membranes
Authors:
Leslie Howe,
Tharindu D. Rajapaksha,
Kalani H. Ellepola,
Vinh X. Ho,
Zachary Aycock,
Minh L. P. Nguyen,
John P. Leckey,
Dave G. Macdonnell,
Hyun Jung Kim,
Nguyen Q. Vinh
Abstract:
The emergence of planar meta-lenses on flexible materials has profoundly impacted the long-standing perception of diffractive optics. Despite their advantages, these lenses still face challenges in design and fabrication to obtain high focusing efficiency and resolving power. A nanofabrication technique is demonstrated based on photolithography and polyimide casting for realizing membrane-based mu…
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The emergence of planar meta-lenses on flexible materials has profoundly impacted the long-standing perception of diffractive optics. Despite their advantages, these lenses still face challenges in design and fabrication to obtain high focusing efficiency and resolving power. A nanofabrication technique is demonstrated based on photolithography and polyimide casting for realizing membrane-based multilevel phase-type Fresnel zone plates (FZPs) with high focusing efficiency. By employing advantageous techniques, these lenses with nanostructures are directly patterned into thin polyimide membranes. The computational and experimental results have indicated that the focusing efficiency of these nanostructures at the primary focus increases significantly with increasing the number of phase levels. Specifically, 16-level phase lenses on a polyimide membrane can achieve a focusing efficiency of more than 91.6% of the input signal (9.5 times better than that of a conventional amplitude-type FZP) and focus light into a diffraction-limited spot together with very weak side-lobes. Furthermore, these lenses exhibit considerably reduced unwanted diffraction orders and produce extremely low background signals. The potential impact of these lenses extends across various applications and techniques including microscopy, imaging, micro-diffraction, remote sensing, and space flight instruments which require lightweight and flexible configurations.
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Submitted 25 February, 2025;
originally announced February 2025.
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Measurable Improvement in Multi-Qubit Readout Using a Kinetic Inductance Traveling Wave Parametric Amplifier
Authors:
M. A. Castellanos-Beltran,
L. Howe,
A. Giachero,
M. R. Vissers,
D. Labranca,
J. N. Ullom,
P. F. Hopkins
Abstract:
Increasing the size and complexity of quantum information systems requires highly-multiplexed readout architectures, as well as amplifier chains operating near the quantum limit (QL) of added noise. While documented prior efforts in KITWPA integration in quantum systems are scarce, in this work we demonstrate integration of a KI-TWPA with a multiplexed-qubit device. To quantify the system noise im…
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Increasing the size and complexity of quantum information systems requires highly-multiplexed readout architectures, as well as amplifier chains operating near the quantum limit (QL) of added noise. While documented prior efforts in KITWPA integration in quantum systems are scarce, in this work we demonstrate integration of a KI-TWPA with a multiplexed-qubit device. To quantify the system noise improvement we perform an ac Stark shift calibration to precisely determine noise power levels on-chip (at each cavity's reference plane) and the total system gain. We then characterize the qubit state measurement fidelity and the corresponding signal-to-noise ratio (SNR). To conduct the most faithful measurement of the benefits offered by the KI-TWPA we perform these measurements for readout chains where the high electron mobility transistor (HEMT) amplifier is the first-stage amplifier (FSA) - with none of the external hardware required to operate the KI-TWPA - and with the KI-TWPA as the FSA. While some readout cavities fall outside the KI-TWPA bandwidth, for those inside the bandwidth we demonstrate a maximum improvement in the state measurement SNR by a factor of 1.45, and increase the fidelity from 96.2% to 97.8%. These measurements demonstrate a system noise below 5 quanta referenced on-chip and we bound the KI-TWPA excess noise to be below 4 quanta for the six cavities inside its bandwidth. These results show a promising path forward for realizing quantum-limited readout chains in large qubit systems using a single parametric amplifier.
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Submitted 2 January, 2025;
originally announced January 2025.
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Kinetic inductance traveling wave amplifier designs for practical microwave readout applications
Authors:
A. Giachero,
M. Vissers,
J. Wheeler,
L. Howe,
J. Gao,
J. Austermann,
J. Hubmayr,
A. Nucciotti,
J. Ullom
Abstract:
A Kinetic Inductance Traveling Wave amplifier (KIT) utilizes the nonlinear kinetic inductance of superconducting films, particularly Niobium Titanium Nitride (NbTiN), for parametric amplification. These amplifiers achieve remarkable performance in terms of gain, bandwidth, compression power, and frequently approach the quantum limit for noise. However, most KIT demonstrations have been isolated fr…
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A Kinetic Inductance Traveling Wave amplifier (KIT) utilizes the nonlinear kinetic inductance of superconducting films, particularly Niobium Titanium Nitride (NbTiN), for parametric amplification. These amplifiers achieve remarkable performance in terms of gain, bandwidth, compression power, and frequently approach the quantum limit for noise. However, most KIT demonstrations have been isolated from practical device readout systems. Using a KIT as the first amplifier in the readout chain of an unoptimized microwave SQUID multiplexer coupled to a transition-edge sensor microcalorimeter we see an initial improvement in the flux noise. One challenge in KIT integration is the considerable microwave pump power required to drive the non-linearity. To address this, we have initiated efforts to reduce the pump power by using thinner NbTiN films and an inverted microstrip transmission line design. In this article, we present the new transmission line design, fabrication procedure, and initial device characterization -- including gain and added noise. These devices exhibit over 10 dB of gain with a 3 dB bandwidth of approximately 5.5-7.25 GHz, a maximum practical gain of 12 dB and typical gain ripple under 4 dB peak-to-peak. We observe an appreciable impedance mismatch in the NbTiN transmission line, which is likely the source of the majority of the gain ripple. Finally we perform an initial noise characterization and demonstrate system-added noise of three quanta or less over nearly the entire 3 dB bandwidth.
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Submitted 13 December, 2024; v1 submitted 17 March, 2024;
originally announced March 2024.