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High Order Geometric Channels for Nonlinear Transport in Bloch Bands
Authors:
Sami Farrag,
Eugene Mele,
Tony Low
Abstract:
We develop a geometric perturbation theory of Bloch states for perturbations coupling via the interband Berry connection. The gauge-invariant Bargmann trace builds the dressed dispersion and connection order by order as a hierarchy \(Q^{(N)}\), starting with the quantum geometric tensor. Higher members encode multiband geometry beyond the quantum metric and Berry curvature. Connected amplitudes co…
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We develop a geometric perturbation theory of Bloch states for perturbations coupling via the interband Berry connection. The gauge-invariant Bargmann trace builds the dressed dispersion and connection order by order as a hierarchy \(Q^{(N)}\), starting with the quantum geometric tensor. Higher members encode multiband geometry beyond the quantum metric and Berry curvature. Connected amplitudes control vertex-order corrections, while strict-order corrections reduce to disconnected products. For a uniform electric field we find the fully coherent, purely geometric sector of the third-order response.
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Submitted 22 July, 2026;
originally announced July 2026.
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Symmetry-isolated magnetoelectric electro-optic effects in noncentrosymmetric metals
Authors:
C. O. Ascencio,
D. J. P. de Sousa,
Seungjun Lee,
Tony Low
Abstract:
We classify the symmetry-constrained forms of the Berry curvature dipole $\mathbf{D}$, gyrotropic magnetic tensor $\mathbf{K}$, and magnetoelectric electro-optic (EO) tensor $\mathbf{G}$, which describe metallic optical and EO effects in time-reversal symmetric, noncentrosymmetric metals. We identify 11 space groups (SGs) in which $\mathbf{D}$ and $\mathbf{K}$ vanish by symmetry while…
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We classify the symmetry-constrained forms of the Berry curvature dipole $\mathbf{D}$, gyrotropic magnetic tensor $\mathbf{K}$, and magnetoelectric electro-optic (EO) tensor $\mathbf{G}$, which describe metallic optical and EO effects in time-reversal symmetric, noncentrosymmetric metals. We identify 11 space groups (SGs) in which $\mathbf{D}$ and $\mathbf{K}$ vanish by symmetry while $\mathbf{G}$ remains allowed, thereby providing a more direct route to observing the recently predicted magnetoelectric EO effects associated with $\mathbf{G}$. First-principles based calculations confirm that $\mathbf{D}$ and $\mathbf{K}$ vanish for representative materials, while $\mathbf{G}$ remains allowed and tunable via Fermi level shifting. We further show that the choices of SG and experimental configuration provide complementary paths for isolating $\mathbf{G}$-driven EO effects, including cases where $\mathbf{D}$ and $\mathbf{K}$ are also symmetry-allowed. In an oblique-incidence geometry, the $\mathbf{D}$-driven response produces a helicity-even absorption or gain correction, whereas the $\mathbf{G}$-driven response couples the $s$ and $p$ optical sectors and produces a bias-induced circular dichroism with a characteristic $\sinθ\cosθ$ angular dependence. This provides a direct experimental route for separating the $\mathbf{D}$- and $\mathbf{G}$-driven EO signatures in noncentrosymmetric metals.
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Submitted 19 July, 2026;
originally announced July 2026.
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Epitaxial Strain Activates Altermagnetic Spin-Splitting Torques in RuO2(100)
Authors:
Qi Jia,
Seung Gyo Jeong,
Seungjun Lee,
Denis Tonini,
Anand Santhosh,
Yifei Yang,
Xiangrui Li,
Brahmdutta Dixit,
Shuang Liang,
Yu-Chia Chen,
Tony Low,
Bharat Jalan,
Jian-Ping Wang
Abstract:
The altermagnetic nature of rutile RuO2 remains under active debate: bulk measurements indicate a nearly nonmagnetic ground state, whereas thin-film studies have reported symmetry-dependent transport signatures consistent with altermagnetism. Here, we provide experimental evidence that altermagnetic spin splitting in RuO2 is a strain-stabilized emergent state rather than an intrinsic bulk property…
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The altermagnetic nature of rutile RuO2 remains under active debate: bulk measurements indicate a nearly nonmagnetic ground state, whereas thin-film studies have reported symmetry-dependent transport signatures consistent with altermagnetism. Here, we provide experimental evidence that altermagnetic spin splitting in RuO2 is a strain-stabilized emergent state rather than an intrinsic bulk property. Angular-resolved spin-torque measurements reveal a symmetry-selected spin Hall response characteristic of altermagnetic spin splitting, which is strongest in the strained regime but progressively suppressed as the lattice relaxes toward the bulk limit. Complementary magnetic measurements further reveal enhanced coercivity and exchange-bias behavior exclusively in strained films, indicating the emergence of a strain-stabilized magnetic state. First-principles calculations reproduce the strain-dependent evolution of the Neel order and spin-split electronic structure, supporting the experimental observations. Together, these results establish altermagnetic spin splitting in RuO2 as a strain-stabilized emergent state and provide a unified explanation for the long-standing discrepancy between bulk and thin-film observations.
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Submitted 24 June, 2026;
originally announced June 2026.
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Enhanced enantiomer discrimination with chiral surface plasmons
Authors:
Sang Hyun Park,
Phaedon Avouris,
Jennifer A. Dionne,
Joshua D. Caldwell,
Tony Low
Abstract:
Strong light-matter coupling in chiral cavities has been proposed as an effective way to selectively interact with an enantiomer that shares the same handedness as the cavity's chiral mode. We show that surface plasmons supported by a two-dimensional interface with both electric and chiral conductivities discriminate enantiomers more efficiently than chiral optical cavities. A quantum-electrodynam…
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Strong light-matter coupling in chiral cavities has been proposed as an effective way to selectively interact with an enantiomer that shares the same handedness as the cavity's chiral mode. We show that surface plasmons supported by a two-dimensional interface with both electric and chiral conductivities discriminate enantiomers more efficiently than chiral optical cavities. A quantum-electrodynamic treatment is developed to incorporate the molecule's electric and magnetic dipole moments. We show that the discrimination factor for a chiral plasmon can exceed that of the best chiral-mirror cavity by almost an order of magnitude due to stronger field confinement. In addition, surface plasmons couple to a dipole's projection onto an entire plane, whereas cavity (or free-space) modes couple only to a single polarization axis. This geometric difference produces a $\sqrt{2}$ orientation-averaged boost in chiral discrimination for chiral surface platforms. A handedness-preserving reflector further amplifies the enhancement, opening a practical route towards chiral sensing using twisted-layer platforms.
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Submitted 6 April, 2026;
originally announced April 2026.
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Twist-Controlled Modulation of Quantum Emitters in a Van der Waals Bilayer
Authors:
Angus Gale,
Seungjun Lee,
Seungmin Park,
Evan Williams,
Helen Zhi Jie Zeng,
James Liddle-Wesolowski,
Young Duck Kim,
Milos Toth,
Tony Low,
Igor Aharonovich
Abstract:
Stacking and twisting two dimensional materials has garnered enormous attention across the condensed matter and the nanophotonic communities. The surge of interest stems from the emergence of novel photophysical phenomena that arise due to the interlayer coupling of the individual layers. Here, we demonstrate that the twist degree of freedom can modulate a single quantum emitter at room temperatur…
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Stacking and twisting two dimensional materials has garnered enormous attention across the condensed matter and the nanophotonic communities. The surge of interest stems from the emergence of novel photophysical phenomena that arise due to the interlayer coupling of the individual layers. Here, we demonstrate that the twist degree of freedom can modulate a single quantum emitter at room temperature. We employ a van der Waals homobilayer of hexagonal boron nitride (hBN) and model the emission properties of quantum emitters as a function of the twist angle. Density functional theory results show that the embedded emitters are strongly influenced by the twist angle and the stacking of the top hBN layer. We consequently engineer these systems experimentally, and demonstrate in-situ tuning of embedded quantum emitters by mechanically twisting the top hBN layer, achieving tunability of over 30 nm (~ 100 meV). Our work demonstrates that mechanical twisting can be harnessed to modulate the embedded quantum emitters in a vdW material, marking a crucial step towards a programmable on-chip quantum circuitry.
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Submitted 5 March, 2026;
originally announced March 2026.
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Strain-Driven Altermagnetic Spin Splitting Effect in RuO$_2$
Authors:
Seungjun Lee,
Seung Gyo Jeong,
Jian-Ping Wang,
Bharat Jalan,
Tony Low
Abstract:
The non-relativistic spin-momentum locking in altermagnets gives rise to a time-reversal-odd spin Hall effect, known as the altermagnetic spin-splitting effect (ASSE). Although ASSE was first reported in RuO$_2$, subsequent experiments have yielded inconsistent results, leaving its spin-transport mechanism unclear. Here, we systematically investigate how strain, crystal orientation, and the Hubbar…
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The non-relativistic spin-momentum locking in altermagnets gives rise to a time-reversal-odd spin Hall effect, known as the altermagnetic spin-splitting effect (ASSE). Although ASSE was first reported in RuO$_2$, subsequent experiments have yielded inconsistent results, leaving its spin-transport mechanism unclear. Here, we systematically investigate how strain, crystal orientation, and the Hubbard $U$ parameter influence the magnetic ground state and spin Hall response of RuO$_2$. Guided by recent experimental observations, we find that $U$ is likely smaller than the value required to induce intrinsic magnetism, suggesting that bulk RuO$_2$ and (001)/(101) RuO$_2$ thin films grown on TiO$_2$ are nonmagnetic in the absence of extrinsic effects. In contrast, (100) and (110) films exhibit strain-induced altermagnetic spin splitting, leading to a strong ASSE even without Hubbard $U$ corrections. These results reconcile previous experimental discrepancies and provide design guidelines for RuO$_2$-based spintronic devices.
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Submitted 10 June, 2026; v1 submitted 12 February, 2026;
originally announced February 2026.
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Emergence of unconventional magnetic order in strain-engineered RuO2/TiO2 superlattices
Authors:
Seung Gyo Jeong,
Seungjun Lee,
Jin Young Oh,
Bonnie Y. X. Lin,
Anand Santhosh,
James M. LeBeau,
Alexander J. Grutter,
Woo Seok Choi,
Tony Low,
Valeria Lauter,
Bharat Jalan
Abstract:
The spin ordering in RuO2 remains a highly debated topic, owing to its elusive nature, with reports ranging from a nonmagnetic ground state to signatures of unconventional magnetic order. Here we provide the first unambiguous, and direct evidence of unconventional magnetism in epitaxial, fully strained RuO2/TiO2 superlattices on TiO2 (110) substrate grown by hybrid molecular beam epitaxy. Polarize…
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The spin ordering in RuO2 remains a highly debated topic, owing to its elusive nature, with reports ranging from a nonmagnetic ground state to signatures of unconventional magnetic order. Here we provide the first unambiguous, and direct evidence of unconventional magnetism in epitaxial, fully strained RuO2/TiO2 superlattices on TiO2 (110) substrate grown by hybrid molecular beam epitaxy. Polarized neutron reflectometry reveals a finite magnetic moment localized within the compressively strained RuO2 layers, consistent with predictions obtained from first-principles calculations. Complementary density functional theory and X-ray photoemission spectroscopy show that epitaxial strain drives the Ru 4d states toward the Fermi level, triggering a Stoner-type instability that stabilizes non-compensated magnetic order. These unique results reveal that RuO2 exhibits unconventional magnetic states under epitaxial strain, which are not accessible in bulk and establish strain engineering as a powerful route to uncover and control magnetic phases in RuO2 and related oxides.
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Submitted 15 January, 2026;
originally announced January 2026.
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Metallic electro-optic effects in topological chiral crystals
Authors:
C. O. Ascencio,
D. J. P. de Sousa,
Tony Low
Abstract:
Topological chiral crystals have emerged as a fertile material platform for investigating optical phenomena derived from the distinctive Fermi surface Berry curvature and orbital magnetic moment textures around multifold chiral band crossings pinned at the time-reversal invariant momenta. In this work, by means of tight-binding model and first principles based calculations, we investigate metallic…
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Topological chiral crystals have emerged as a fertile material platform for investigating optical phenomena derived from the distinctive Fermi surface Berry curvature and orbital magnetic moment textures around multifold chiral band crossings pinned at the time-reversal invariant momenta. In this work, by means of tight-binding model and first principles based calculations, we investigate metallic electro-optic (EO) responses stemming from the Berry curvature and orbital magnetic moment of Bloch electrons across 37 materials belonging to space group 198 (SG198). Previously thought to vanish in SG198, our findings reveal a nonzero Berry curvature dipole attributed to the energetic misalignment between topologically charged point nodes of opposite chirality. Moreover, we find that the recently predicted magnetoelectric EO effects, which arise from the interplay between the Berry curvature and magnetic moment on the Fermi surface, are readily accessible in BeAu under experimentally feasible electric biases.
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Submitted 13 November, 2025; v1 submitted 30 October, 2025;
originally announced October 2025.
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Strain Engineering of Altermagnetic Symmetry in Epitaxial RuO$_2$ Films
Authors:
Johnathas D. S. Forte,
Seung Gyo Jeong,
Anand Santhosh,
Seungjun Lee,
Bharat Jalan,
Tony Low
Abstract:
The magnetic ground state of RuO$_2$ has been under intense debate. Using first-principles calculations, we show that compressive strain along [001] direction stabilizes an altermagnetic phase in RuO$_2$ thin films grown on (100) and (110) TiO$_2$ substrates. We further identify that compressive strain enhances the density of states near the Fermi level, resulting in a Fermi surface instability an…
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The magnetic ground state of RuO$_2$ has been under intense debate. Using first-principles calculations, we show that compressive strain along [001] direction stabilizes an altermagnetic phase in RuO$_2$ thin films grown on (100) and (110) TiO$_2$ substrates. We further identify that compressive strain enhances the density of states near the Fermi level, resulting in a Fermi surface instability and the emergence of altermagnetism. The magnitude of strain and the associated increase in the density of states can be tuned by varying the film thickness, as systematically confirmed by x-ray diffraction and photoemission spectroscopy measurements. Symmetry analysis further reveals that (100) RuO$_2$ hosts an ideal altermagnetic order, whereas broken symmetry in (110) films leads to an uncompensated ferrimagnetic state. Finally, we discuss the effects of Hubbard $U$ parameters and evaluate the realistic tunneling magnetoresistance of (100) RuO$_2$.
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Submitted 3 April, 2026; v1 submitted 30 October, 2025;
originally announced October 2025.
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Optical Gain Through Metallic Electro-Optical Effects
Authors:
N. Roldan-Levchenko,
D. J. P. de Sousa,
C. O. Ascencio,
J. D. S Forte,
L. Martin-Moreno,
T. Low
Abstract:
Optical gain is a critical process in today's semiconductor technology and it is most often achieved via stimulated emission. In this theoretical study, we find a resonant TE mode in biased low-symmetry two-dimensional metallic systems which may lead to optical gain in the absence of stimulated emission. We do so by first modeling the optical conductivity using Boltzmann non-equilibrium transport…
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Optical gain is a critical process in today's semiconductor technology and it is most often achieved via stimulated emission. In this theoretical study, we find a resonant TE mode in biased low-symmetry two-dimensional metallic systems which may lead to optical gain in the absence of stimulated emission. We do so by first modeling the optical conductivity using Boltzmann non-equilibrium transport theory and then simulating the scattering problem using a scattered-wave formalism. Assuming that the system may possess a Berry curvature dipole (BCD) and a non-zero Magnetoelectric tensor (MET), we find that the optical conductivity has a non-trivial dependence on the direction of the applied bias, which allows for probing the TE mode. After analyzing the system with one of each of the effects, we find that the resonant TE mode is only accessible when both effects are present. Further studies are necessary to find materials with a suitably large BCD and MET, in order to realize the predictions within this study.
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Submitted 29 October, 2025;
originally announced October 2025.
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Metallic Electro-Optic Effect in Twisted Double-Bilayer Graphene
Authors:
D. J. P. de Sousa,
N. Roldan-Levchenko,
C. O. Ascencio,
J. D. S. Forte,
Paul M. Haney,
Tony Low
Abstract:
Recent theoretical advances have highlighted the role of Bloch state intrinsic properties in enabling unconventional electro-optic (EO) phenomena in bulk metals, offering novel strategies for dynamic optical control in quantum materials. Here, we identify an alternative EO mechanism in bulk metallic systems that arises from the interplay between Berry curvature and the orbital magnetic moment of B…
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Recent theoretical advances have highlighted the role of Bloch state intrinsic properties in enabling unconventional electro-optic (EO) phenomena in bulk metals, offering novel strategies for dynamic optical control in quantum materials. Here, we identify an alternative EO mechanism in bulk metallic systems that arises from the interplay between Berry curvature and the orbital magnetic moment of Bloch electrons. Focusing on twisted double-bilayer graphene (TDBG), we show that the enhanced intrinsic properties of moiré Bloch bands give rise to a sizable linear magnetoelectric EO response, a first-order, electric-field-induced non-Hermitian correction to the gyrotropic magnetic susceptibility. This mechanism dominates in $C_{3z}$-symmetric TDBG, where EO contributions originating from the Berry curvature dipole (BCD) are symmetry-forbidden. Our calculations reveal giant, gate-tunable linear and circular dichroism in the terahertz regime, establishing a robust and tunable platform for ultrafast EO modulation in two-dimensional materials beyond the BCD paradigm.
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Submitted 27 October, 2025;
originally announced October 2025.
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Observation of mirror-odd and mirror-even spin texture in ultrathin epitaxially strained RuO2 films
Authors:
Yichen Zhang,
Seung Gyo Jeong,
Luca Buiarelli,
Seungjun Lee,
Yucheng Guo,
Jiaqin Wen,
Hang Li,
Sreejith Nair,
In Hyeok Choi,
Zheng Ren,
Ziqin Yue,
Jounghoon Hyun,
Tieqiong Zhang,
Alexei Fedorov,
Sung-Kwan Mo,
Hojoon Lim,
Adrian Hunt,
Iradwikanari Waluyo,
Junichiro Kono,
Jan Minar,
Jong Seok Lee,
Tony Low,
Turan Birol,
Rafael M. Fernandes,
Milan Radovic
, et al. (2 additional authors not shown)
Abstract:
Recently, rutile ruthenium dioxide (RuO$_2$) has attracted renewed interest due to expectations of prominent altermagnetic spin splitting. However, accumulating experimental evidence suggests that, in its bulk and thick-film forms, RuO$_2$ does not display any form of magnetic ordering. Despite this, the spin structure of RuO$_2$ remains largely unexplored in the ultrathin limit, where substrate-i…
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Recently, rutile ruthenium dioxide (RuO$_2$) has attracted renewed interest due to expectations of prominent altermagnetic spin splitting. However, accumulating experimental evidence suggests that, in its bulk and thick-film forms, RuO$_2$ does not display any form of magnetic ordering. Despite this, the spin structure of RuO$_2$ remains largely unexplored in the ultrathin limit, where substrate-imposed epitaxial strain can be substantial. Here, we use spin-resolved angle-resolved photoemission spectroscopy, supported by ab initio calculations, to reveal the electronic structure of 2-nanometer-thick epitaxial RuO$_2$ heterostructures. We observe an unconventional spin texture characterized by the coexistence of mirror-even and mirror-odd momentum-dependent components. A comprehensive symmetry analysis rules out nonmagnetic origins of this spin texture. These findings suggest an emergent nonrelativistic spin structure enabled by epitaxial strain in the ultrathin limit, marking a distinct departure from the behavior of relaxed or bulk RuO$_2$. Our work opens previously unexplored perspectives for exploring symmetry-breaking mechanisms and spin textures in oxide heterostructures.
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Submitted 1 August, 2026; v1 submitted 19 September, 2025;
originally announced September 2025.
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Strain-Stabilized Interfacial Polarization Tunes Work Function Over 1 eV in RuO2/TiO2 Heterostructures
Authors:
Seung Gyo Jeong,
Bonnie Y. X. Lin,
Mengru Jin,
In Hyeok Choi,
Seungjun Lee,
Zhifei Yang,
Sreejith Nair,
Rashmi Choudhary,
Juhi Parikh,
Anand Santhosh,
Matthew Neurock,
Kelsey A. Stoerzinger,
Jong Seok Lee,
Tony Low,
Qing Tu,
James M. LeBeau,
Bharat Jalan
Abstract:
Interfacial polarization-charge accumulation at the heterointerface-is a well-established tool in semiconductors, but its influence in metals remains unexplored. Here, we demonstrate that interfacial polarization can robustly modulate surface work function in metallic rutile RuO2 layers in epitaxial RuO2/TiO2 heterostructures grown by hybrid molecular beam epitaxy. Using multislice electron ptycho…
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Interfacial polarization-charge accumulation at the heterointerface-is a well-established tool in semiconductors, but its influence in metals remains unexplored. Here, we demonstrate that interfacial polarization can robustly modulate surface work function in metallic rutile RuO2 layers in epitaxial RuO2/TiO2 heterostructures grown by hybrid molecular beam epitaxy. Using multislice electron ptychography, we directly visualize polar displacements of transition metal ions relative to oxygen octahedra near the interface, despite the conductive nature of RuO2. This interfacial polarization enables over 1 eV modulation of the RuO2 work function, controlled by small thickness variation (2-4 nm) as measured by Kelvin probe probe microscopy, with a critical thickness of 4 nm - corresponding to the transition from fully strained to relaxed film. These results establish interfacial polarization as a powerful route to control electronic properties in metals and have implications for designing tunable electronic, catalytic, and quantum devices through interfacial control in polar metallic systems.
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Submitted 10 July, 2025;
originally announced July 2025.
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Moiré Collapse and Luttinger Liquids In Twisted Anisotropic Homobilayers
Authors:
D. J. P. de Sousa,
Seungjun Lee,
Francisco Guinea,
Tony Low
Abstract:
We introduce twisted anisotropic homobilayers as a distinct class of moiré systems, characterized by a distinctive ``magic angle", $θ_M$, where both the moiré unit cell and Brillouin zone collapse. Unlike conventional studies of moiré materials, which primarily focus on small lattice misalignments, we demonstrate that this moiré collapse occurs at large twist angles in generic twisted anisotropic…
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We introduce twisted anisotropic homobilayers as a distinct class of moiré systems, characterized by a distinctive ``magic angle", $θ_M$, where both the moiré unit cell and Brillouin zone collapse. Unlike conventional studies of moiré materials, which primarily focus on small lattice misalignments, we demonstrate that this moiré collapse occurs at large twist angles in generic twisted anisotropic homobilayers. The collapse angle, $θ_M$, is likely to give rise quasi-crystal behavior as well as to the formation of strongly correlated states, that arise not from flat bands, but from the presence of ultra-anisotropic electronic states, where non-Fermi liquid phases can be stabilized. In this work, we develop a continuum model for electrons based on extensive \textit{ab initio} calculations for twisted bilayer black phosphorus, enabling a detailed study of the emerging moiré collapse features in this archetypal system. We show that the (temperature) stability criterion for the emergence of (sliding) Luttinger liquids is generally met as the twist angle approaches $θ_M$. Furthermore, we explicitly formulate the collapsed single-particle one-dimensional (1D) continuum Hamiltonian and provide the \textit{fully interacting}, bosonized Hamiltonian applicable at low doping levels. Our analysis reveals a rich landscape of multichannel Luttinger liquids, potentially enhanced by valley degrees of freedom at large twist angles.
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Submitted 24 June, 2025;
originally announced June 2025.
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Generalized energy band alignment model for van der Waals heterostructures with a charge spillage dipole
Authors:
Seungjun Lee,
Eng Hock Lee,
Young-Kyun Kwon,
Steven J. Koester,
Phaedon Avouris,
Vladimir Cherkassky,
Jerry Tersoff,
Tony Low
Abstract:
The energy band alignment at the interface of van der Waals heterostructures (vdWHs) is a key design parameter for next-generation electronic and optoelectronic devices. Although the Anderson and midgap models have been widely adopted for bulk semiconductor heterostructures, they exhibit severe limitations when applied to vdWHs, particularly for type-III systems. Based on first-principles calculat…
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The energy band alignment at the interface of van der Waals heterostructures (vdWHs) is a key design parameter for next-generation electronic and optoelectronic devices. Although the Anderson and midgap models have been widely adopted for bulk semiconductor heterostructures, they exhibit severe limitations when applied to vdWHs, particularly for type-III systems. Based on first-principles calculations for approximately $10^3$ vdWHs, we demonstrate these traditional models miss a critical dipole arising from interlayer charge spillage. We introduce a generalized linear response (gLR) model that includes this dipole through a quantum capacitance term while remaining analytically compact. With only two readily computed inputs, the charge neutrality level offset and the sum of the isolated-layer bandgaps, the gLR reproduces DFT band line-ups with $r^2\sim$0.9 across type-I, II, and III stacks. Machine-learning feature analysis confirms that these two descriptors dominate the underlying physics, indicating the model is near-minimal and broadly transferable. The gLR framework therefore provides both mechanistic insight and a fast, accurate surrogate for high-throughput screening of the vast vdW heterostructure design space.
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Submitted 23 June, 2025;
originally announced June 2025.
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Robust Charge-Density Wave Correlations in Optimally-Doped YBa2Cu3Oy
Authors:
Rui Zhou,
Igor Vinograd,
Hadrien Mayffre,
Juan Porras,
Hun-Ho Kim,
Toshinao Loew,
Yiran Liu,
Matthieu Le Tacon,
Bernhard Keimer,
Marc-Henri Julien
Abstract:
Charge-density wave (CDW) order is a key property of high-Tc cuprates, but its boundaries in the phase diagram and potential connections to other phases remain controversial. We report nuclear magnetic resonance (NMR) measurements in the prototypical cuprate YBa2Cu3Oy demonstrating that short-range static CDW order remains robust at optimal doping (p=0.165), exhibiting a strength and temperature d…
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Charge-density wave (CDW) order is a key property of high-Tc cuprates, but its boundaries in the phase diagram and potential connections to other phases remain controversial. We report nuclear magnetic resonance (NMR) measurements in the prototypical cuprate YBa2Cu3Oy demonstrating that short-range static CDW order remains robust at optimal doping (p=0.165), exhibiting a strength and temperature dependence in the normal state similar to those observed at p=0.11 in the underdoped regime. For an overdoped sample with p=0.184, we detect no static CDW down to T=Tc, though weak CDW order plausibly emerges below Tc. More broadly, we argue that both quenched disorder and competition with superconductivity influence the apparent boundary of the CDW phase, likely causing an underestimation of its intrinsic extent in doping. These findings challenge the view that the CDW phase boundary lies below p*=0.19, widely regarded as the critical doping where the pseudogap phase ends in YBa2Cu3Oy.
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Submitted 31 May, 2025;
originally announced June 2025.
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Circulators Based on Coupled Quantum Anomalous Hall Insulators and Resonators
Authors:
Luis A. Martinez,
Nick Du,
Nicholas Materise,
Sean O' Kelley,
Xian Wu,
Gang Qiu,
Kang L. Wang,
Gianpaolo P. Carosi,
Tony Low,
Dong-Xia Qu
Abstract:
Integrated plasmonics is advancing rapidly, enabling a wide range of functionalities to be incorporated onto a single chip. Applications span information processing, computation, quantum sensing, and dark-matter detection. This progress has driven the development of integrated non-reciprocal devices, which are essential for preventing unwanted feedback that can degrade system performance. While no…
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Integrated plasmonics is advancing rapidly, enabling a wide range of functionalities to be incorporated onto a single chip. Applications span information processing, computation, quantum sensing, and dark-matter detection. This progress has driven the development of integrated non-reciprocal devices, which are essential for preventing unwanted feedback that can degrade system performance. While non-reciprocal devices have been realized in edge magnetoplasmon materials via classical interference effects, their operation is often limited by the input power range. Here, we demonstrate that topological circulators utilizing asymmetric coupling offer improved input power range, isolation, and insertion loss. In this configuration, we demonstrate the coupling between a chiral edge magnetoplasmonic resonator and a pair of LC resonators is well described by an effective non-Hermitian two-site Hatano-Nelson model with asymmetric directional couplings, resulting in nonreciprocal behavior. The coherent photon-plasmon interaction enables a circulator with up to 50 dB of isolation across a broad range of excitation power. These results suggest that magnetic topological insulators provide a promising platform for realizing asymmetric non-Hermitian couplings at radio frequencies and for exploring regimes of strong directional suppression and possible exceptional-point physics. More broadly, they highlight the potential of topological-material-based microwave devices for future integration with superconducting quantum information platforms.
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Submitted 9 June, 2026; v1 submitted 12 May, 2025;
originally announced May 2025.
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Emergent superconductivity and non-reciprocal transport in a van der Waals Dirac semimetal/antiferromagnet heterostructure
Authors:
Saurav Islam,
Max Stanley,
Anthony Richardella,
Seungjun Lee,
Kalana D. Halanayake,
Sandra Santhosh,
Danielle Reifsnyder Hickey,
Tony Low,
Nitin Samarth
Abstract:
We investigate emergent superconductivity and non-reciprocal transport (magnetochiral anisotropy, superconducting diode effect) at the heterointerface of two non-superconducting van der Waals (vdW) materials, the Dirac semimetal ZrTe$_2$ and the antiferromagnetic iron chalcogenide FeTe, grown using molecular beam epitaxy. We show from electrical transport measurements that two-dimensional (2D) sup…
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We investigate emergent superconductivity and non-reciprocal transport (magnetochiral anisotropy, superconducting diode effect) at the heterointerface of two non-superconducting van der Waals (vdW) materials, the Dirac semimetal ZrTe$_2$ and the antiferromagnetic iron chalcogenide FeTe, grown using molecular beam epitaxy. We show from electrical transport measurements that two-dimensional (2D) superconductivity arises at the heterointerface below a critical temperature $T_c \sim 10$~K. In the superconducting transition region, non-reciprocal transport, characterized by the magneto-chiral anisotropy, exhibits a magnitude comparable to that observed in topological insulators, and is enhanced by a factor of three when the heterostructure is capped with a 2D vdW ferromagnet (CrTe$_2$). Below $T_c$, the superconducting diode effect exhibits an efficiency of 29\%. With strong spin-orbit coupling in ZrTe$_2$, these epitaxial heterostructures provide an attractive epitaxial vdW platform for exploring unconventional superconductivity in Dirac semimetals and for developing non-reciprocal devices for superconducting electronics.
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Submitted 1 August, 2026; v1 submitted 28 April, 2025;
originally announced April 2025.
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Computational search for materials having a giant anomalous Hall effect in the pyrochlore and spinel crystal structures
Authors:
Sean Sullivan,
Seungjun Lee,
Nathan J. Szymanski,
Amil Merchant,
Ekin Dogus Cubuk,
Tony Low,
Christopher J. Bartel
Abstract:
Ferromagnetic pyrochlore and spinel materials with topological flat bands are of interest for their potential to exhibit a giant anomalous Hall effect (AHE). In this work, we present computational predictions of stability and electronic structure for 448 compositions within the pyrochlore (A2B2O7) and spinel (AB2O4) frameworks. Of these, 92 are predicted to be thermodynamically stable or close (<…
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Ferromagnetic pyrochlore and spinel materials with topological flat bands are of interest for their potential to exhibit a giant anomalous Hall effect (AHE). In this work, we present computational predictions of stability and electronic structure for 448 compositions within the pyrochlore (A2B2O7) and spinel (AB2O4) frameworks. Of these, 92 are predicted to be thermodynamically stable or close (< 100 meV/atom) to the convex hull, with trends deviating from expectations based on ionic radius-ratio rules. Thirteen are predicted to adopt a ferromagnetic ground state among the collinear configurations considered. Two additional materials meeting these criteria were also identified from open materials databases. Calculations of anomalous Hall angles (AHA) and conductivities reveal that 11 of the screened materials are promising candidates for spintronic applications requiring high electronic conductivity and a giant AHE. Our results suggest that the AHA can be further enhanced by tuning the Fermi level, for example through chemical doping. Using this approach, we identify five materials whose AHA exceed 0.2 under the approximation of collinear magnetism. Notably, Ag2Pt2O7 exhibits a high AHA of 0.405 when its Fermi level is optimized. These findings provide a roadmap for the targeted synthesis of new pyrochlore and spinel compounds with enhanced AHE properties. They also broaden the compositional design space for these structures and support the discovery of high-performance materials for next-generation spintronic applications.
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Submitted 11 September, 2025; v1 submitted 25 April, 2025;
originally announced April 2025.
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Resonant x-ray scattering study of charge-density wave correlations in YBa$_{2}$Cu$_{3}$O$_{6+x}$ under uniaxial stress
Authors:
S. Nakata,
D. Betto,
E. Schierle,
S. Hameed,
Y. Liu,
H. -H. Kim,
S. M. Souliou,
T. Lacmann,
K. Fürsich,
T. Loew,
E. Weschke,
A. P. Mackenzie,
C. W. Hicks,
M. Le Tacon,
B. Keimer,
M. Minola
Abstract:
We report a comprehensive study of the uniaxial stress response of charge-density-wave (CDW) correlations in detwinned single crystals of the high temperature superconductor YBa$_2$Cu$_3$O$_{6+x}$ (YBCO$_{6+x}$) with $0.40 \leq x \leq 0.93$ (hole-doping levels $0.072 \leq p \leq 0.168$) by means of Cu $L_3$-edge resonant energy-integrated x-ray scattering (REXS). We show that the influence of unia…
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We report a comprehensive study of the uniaxial stress response of charge-density-wave (CDW) correlations in detwinned single crystals of the high temperature superconductor YBa$_2$Cu$_3$O$_{6+x}$ (YBCO$_{6+x}$) with $0.40 \leq x \leq 0.93$ (hole-doping levels $0.072 \leq p \leq 0.168$) by means of Cu $L_3$-edge resonant energy-integrated x-ray scattering (REXS). We show that the influence of uniaxial stress is strongly doping dependent: the quasi-two-dimensional CDW is enhanced by in-plane uniaxial stress in a wide hole doping range ($0.45 \leq x \leq 0.80$), but only barely affected in the most underdoped and optimally doped samples ($x = 0.40$ and 0.93), where the CDW correlation length is minimal. A stress-induced three-dimensionally long-range ordered (3D) CDW was observed only in YBCO$_{6.50}$ and YBCO$_{6.67}$. The temperature dependence of the 3D CDW clearly indicates a strong competition with superconductivity. Based on the systematic strain-, doping-, and temperature-dependent REXS measurements reported here, we discuss the relationship between charge order and superconductivity in YBCO$_{6+x}$ and other cuprates.
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Submitted 16 April, 2025;
originally announced April 2025.
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Roadmap for Photonics with 2D Materials
Authors:
F. Javier García de Abajo,
D. N. Basov,
Frank H. L. Koppens,
Lorenzo Orsini,
Matteo Ceccanti,
Sebastián Castilla,
Lorenzo Cavicchi,
Marco Polini,
P. A. D. Gonçalves,
A. T. Costa,
N. M. R. Peres,
N. Asger Mortensen,
Sathwik Bharadwaj,
Zubin Jacob,
P. J. Schuck,
A. N. Pasupathy,
Milan Delor,
M. K. Liu,
Aitor Mugarza,
Pablo Merino,
Marc G. Cuxart,
Emigdio Chávez-Angel,
Martin Svec,
Luiz H. G. Tizei,
Florian Dirnberger
, et al. (123 additional authors not shown)
Abstract:
Triggered by the development of exfoliation and the identification of a wide range of extraordinary physical properties in self-standing films consisting of one or few atomic layers, two-dimensional (2D) materials such as graphene, transition metal dichalcogenides (TMDs), and other van der Waals (vdW) crystals currently constitute a wide research field protruding in multiple directions in combinat…
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Triggered by the development of exfoliation and the identification of a wide range of extraordinary physical properties in self-standing films consisting of one or few atomic layers, two-dimensional (2D) materials such as graphene, transition metal dichalcogenides (TMDs), and other van der Waals (vdW) crystals currently constitute a wide research field protruding in multiple directions in combination with layer stacking and twisting, nanofabrication, surface-science methods, and integration into nanostructured environments. Photonics encompasses a multidisciplinary collection of those directions, where 2D materials contribute with polaritons of unique characteristics such as strong spatial confinement, large optical-field enhancement, long lifetimes, high sensitivity to external stimuli (e.g., electric and magnetic fields, heating, and strain), a broad spectral range from the far infrared to the ultraviolet, and hybridization with spin and momentum textures of electronic band structures. The explosion of photonics with 2D materials as a vibrant research area is producing breakthroughs, including the discovery and design of new materials and metasurfaces with unprecedented properties as well as applications in integrated photonics, light emission, optical sensing, and exciting prospects for applications in quantum information, and nanoscale thermal transport. This Roadmap summarizes the state of the art in the field, identifies challenges and opportunities, and discusses future goals and how to meet them through a wide collection of topical sections prepared by leading practitioners.
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Submitted 14 April, 2025; v1 submitted 6 April, 2025;
originally announced April 2025.
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Interfacial strong coupling and negative dispersion of propagating polaritons in freestanding oxide membranes
Authors:
Brayden Lukaskawcez,
Shivasheesh Varshney,
Sooho Choo,
Sang Hyun Park,
Dongjea Seo,
Liam Thompson,
Nitzan Hirshberg,
Madison Garber,
Devon Uram,
Hayden Binger,
Steven Koester,
Sang-Hyun Oh,
Tony Low,
Bharat Jalan,
Alexander McLeod
Abstract:
Membranes of complex oxides like perovskite SrTiO3 extend the multi-functional promise of oxide electronics into the nanoscale regime of two-dimensional materials. Here we demonstrate that free-standing oxide membranes supply a reconfigurable platform for nano-photonics based on propagating surface phonon polaritons. We apply infrared near-field imaging and -spectroscopy enabled by a tunable ultra…
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Membranes of complex oxides like perovskite SrTiO3 extend the multi-functional promise of oxide electronics into the nanoscale regime of two-dimensional materials. Here we demonstrate that free-standing oxide membranes supply a reconfigurable platform for nano-photonics based on propagating surface phonon polaritons. We apply infrared near-field imaging and -spectroscopy enabled by a tunable ultrafast laser to study pristine nano-thick SrTiO3 membranes prepared by hybrid molecular beam epitaxy. As predicted by coupled mode theory, we find that strong coupling of interfacial polaritons realizes symmetric and antisymmetric hybridized modes with simultaneously tunable negative and positive group velocities. By resolving reflection of these propagating modes from membrane edges, defects, and substrate structures, we quantify their dispersion with position-resolved nano-spectroscopy. Remarkably, we find polariton negative dispersion is both robust and tunable through choice of membrane dielectric environment and thickness and propose a novel design for in-plane Veselago lensing harnessing this control. Our work lays the foundation for tunable transformation optics at the nanoscale using polaritons in a wide range of freestanding complex oxide membranes.
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Submitted 27 June, 2025; v1 submitted 2 March, 2025;
originally announced March 2025.
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Anisotropic Strain Relaxation-Induced Directional Ultrafast Carrier Dynamics in RuO2 Films
Authors:
S. G. Jeong,
I. H. Choi,
S. Lee,
J. Y. Oh,
S. Nair,
J. H. Lee,
C. Kim,
A. Seo,
W. S. Choi,
T. Low,
J. S. Lee,
B. Jalan
Abstract:
Ultrafast light-matter interactions inspire potential functionalities in picosecond optoelectronic applications. However, achieving directional carrier dynamics in metals remains challenging due to strong carrier scattering within a multiband environment, typically expected to isotropic carrier relaxation. In this study, we demonstrate epitaxial RuO2/TiO2 (110) heterostructures grown by hybrid mol…
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Ultrafast light-matter interactions inspire potential functionalities in picosecond optoelectronic applications. However, achieving directional carrier dynamics in metals remains challenging due to strong carrier scattering within a multiband environment, typically expected to isotropic carrier relaxation. In this study, we demonstrate epitaxial RuO2/TiO2 (110) heterostructures grown by hybrid molecular beam epitaxy to engineer polarization-selectivity of ultrafast light-matter interactions via anisotropic strain engineering. Combining spectroscopic ellipsometry, X-ray absorption spectroscopy, and optical pump-probe spectroscopy, we revealed the strong anisotropic transient optoelectronic response of strain-engineered RuO2/TiO2 (110) heterostructures along both in-plane [001] and [1-10] crystallographic directions. Theoretical analysis identifies strain-induced modifications in band nesting as the underlying mechanism for enhanced anisotropic carrier relaxation. These findings establish epitaxial strain engineering as a powerful tool for tuning anisotropic optoelectronic responses in metallic systems, paving the way for next-generation polarization-sensitive ultrafast optoelectronic devices.
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Submitted 12 February, 2025;
originally announced February 2025.
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Nodal lines in a honeycomb plasmonic crystal with synthetic spin
Authors:
Sang Hyun Park,
E. J. Mele,
Tony Low
Abstract:
We analyze a plasmonic model on a honeycomb lattice of metallic nanodisks that hosts nodal lines protected by local symmetries. Using both continuum and tight-binding models, we show that a combination of a synthetic time-reversal symmetry, inversion symmetry, and particle-hole symmetry enforce the existence of nodal lines enclosing the $\mathrm{K}$ and $\mathrm{K}'$ points. The nodal lines are no…
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We analyze a plasmonic model on a honeycomb lattice of metallic nanodisks that hosts nodal lines protected by local symmetries. Using both continuum and tight-binding models, we show that a combination of a synthetic time-reversal symmetry, inversion symmetry, and particle-hole symmetry enforce the existence of nodal lines enclosing the $\mathrm{K}$ and $\mathrm{K}'$ points. The nodal lines are not directly gapped even when these symmetries are weakly broken. The existence of the nodal lines is verified using full-wave electromagnetic simulations. We also show that the degeneracies at nodal lines can be relieved by introducing a Kekulé distortion that acts to mix the nodal lines near the $\mathrm{K},\mathrm{K}'$ points. Our findings open pathways for designing novel plasmonic and photonic devices without reliance on complex symmetry engineering, presenting a convenient platform for studying nodal structures in two-dimensional systems.
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Submitted 2 February, 2025;
originally announced February 2025.
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Metallicity and Anomalous Hall Effect in Epitaxially-Strained, Atomically-thin RuO2 Films
Authors:
Seung Gyo Jeong,
Seungjun Lee,
Bonnie Lin,
Zhifei Yang,
In Hyeok Choi,
Jin Young Oh,
Sehwan Song,
Seung wook Lee,
Sreejith Nair,
Rashmi Choudhary,
Juhi Parikh,
Sungkyun Park,
Woo Seok Choi,
Jong Seok Lee,
James M. LeBeau,
Tony Low,
Bharat Jalan
Abstract:
The anomalous Hall effect (AHE), a hallmark of time-reversal symmetry breaking, has been reported in rutile RuO2, a debated metallic altermagnetic candidate. Previously, AHE in RuO2 was observed only in strain-relaxed thick films under extremely high magnetic fields (~50 T). Yet, in ultrathin strained films with distinctive anisotropic electronic structures, there are no reports, likely due to dis…
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The anomalous Hall effect (AHE), a hallmark of time-reversal symmetry breaking, has been reported in rutile RuO2, a debated metallic altermagnetic candidate. Previously, AHE in RuO2 was observed only in strain-relaxed thick films under extremely high magnetic fields (~50 T). Yet, in ultrathin strained films with distinctive anisotropic electronic structures, there are no reports, likely due to disorder and defects suppressing metallicity thus hindering its detection. Here, we demonstrate that ultrathin, fully-strained 2 nm TiO2/t nm RuO2/TiO2 (110) heterostructures, grown by hybrid molecular beam epitaxy, retain metallicity and exhibit a sizeable AHE at a significantly lower magnetic field (< 9 T). Density functional theory calculations reveal that epitaxial strain stabilizes a non-compensated magnetic ground state and reconfigures magnetic ordering in RuO2 (110) thin films. These findings establish ultrathin RuO2 as a platform for strain-engineered magnetism and underscore the transformative potential of epitaxial design in advancing spintronic technologies.
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Submitted 19 January, 2025;
originally announced January 2025.
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Coexistence of unconventional spin Hall effect and antisymmetric planar Hall effect in IrO$_2$
Authors:
Yifei Yang,
Sreejith Nair,
Yihong Fan,
Yu-Chia Chen,
Qi Jia,
Onri Jay Benally,
Seungjun Lee,
Seung Gyo Jeong,
Zhifei Yang,
Tony Low,
Bharat Jalan,
Jian-Ping Wang
Abstract:
Crystal symmetry plays an important role in the Hall effects. Unconventional spin Hall effect (USHE), characterized by Dresselhaus and out-of-plane spins, has been observed in materials with low crystal symmetry. Recently, antisymmetric planar Hall effect (APHE) was discovered in rutile RuO2 and IrO2 (101) thin films, which also exhibit low crystal symmetry. In this study, we report the observatio…
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Crystal symmetry plays an important role in the Hall effects. Unconventional spin Hall effect (USHE), characterized by Dresselhaus and out-of-plane spins, has been observed in materials with low crystal symmetry. Recently, antisymmetric planar Hall effect (APHE) was discovered in rutile RuO2 and IrO2 (101) thin films, which also exhibit low crystal symmetry. In this study, we report the observation of both USHE and APHE in IrO2 (111) films, using spin-torque ferromagnetic resonance (ST-FMR) and harmonic Hall measurements, respectively. Notably, the unconventional spin torque efficiency from Dresselhaus spin was more than double that of a previous report. Additionally, the temperature dependence of APHE suggests that it arises from the Lorentz force, constrained by crystal symmetry. Symmetry analysis supports the coexistence of USHE and APHE and demonstrates that both originate from the crystal symmetry of IrO2 (111), paving the way for a deeper understanding of Hall effects and related physical phenomena.
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Submitted 11 March, 2025; v1 submitted 8 November, 2024;
originally announced November 2024.
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Giant spin Hall effect with multi-directional spin components in Ni4W
Authors:
Yifei Yang,
Seungjun Lee,
Yu-Chia Chen,
Qi Jia,
Duarte Sousa,
Michael Odlyzko,
Javier Garcia-Barriocanal,
Guichuan Yu,
Greg Haugstad,
Yihong Fan,
Yu-Han Huang,
Deyuan Lyu,
Zach Cresswell,
Tony Low,
Jian-Ping Wang
Abstract:
Spin-orbit torque (SOT) can be used to efficiently manipulate the magnetic state of magnetic materials, which is an essential element for memory and logic applications. Due to symmetry constraints, only in-plane spins can be injected into the ferromagnet from the underlying SOT layer for conventional SOT materials such as heavy metals and topological materials. Through the use of materials with lo…
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Spin-orbit torque (SOT) can be used to efficiently manipulate the magnetic state of magnetic materials, which is an essential element for memory and logic applications. Due to symmetry constraints, only in-plane spins can be injected into the ferromagnet from the underlying SOT layer for conventional SOT materials such as heavy metals and topological materials. Through the use of materials with low symmetries, or other symmetry breaking approaches, unconventional spin currents with out-of-plane polarization has been demonstrated and enabled field-free deterministic switching of perpendicular magnetization. Despite this progress, the SOT efficiency of these materials has typically remained low. Here, we report a giant SOT efficiency of 0.85 in sputtered Ni4W/CoFeB heterostructure at room temperature, as evaluated by second harmonic Hall measurements. In addition, due to the low crystal symmetry of Ni4W, unconventional out-of-plane and Dresselhaus-like spin components were observed. Macro-spin simulation suggests our spin Hall tensor to provide about an order of magnitude improvement in the magnetization switching efficiency, thus broadening the path towards energy efficient spintronic devices using low-symmetry materials.
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Submitted 8 November, 2024;
originally announced November 2024.
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Moiré Kramers-Weyl Fermions from Structural Chirality with Ideal Radial Spin Texture
Authors:
D. J. P. de Sousa,
Seungjun Lee,
Tony Low
Abstract:
We demonstrate that two-dimensional Kramers-Weyl fermions can be engineered in spin-orbit coupled twisted bilayers, where the chiral structure of these moiré systems breaks all mirror symmetries, confining Kramers-Weyl fermions to high-symmetry points in the Brillouin zone under time reversal symmetry. Our theoretical analysis reveals a symmetry-enforced Weyl-like interlayer moiré coupling that un…
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We demonstrate that two-dimensional Kramers-Weyl fermions can be engineered in spin-orbit coupled twisted bilayers, where the chiral structure of these moiré systems breaks all mirror symmetries, confining Kramers-Weyl fermions to high-symmetry points in the Brillouin zone under time reversal symmetry. Our theoretical analysis reveals a symmetry-enforced Weyl-like interlayer moiré coupling that universally ensures an ideal radial spin-texture at arbitrary twist angles, under $C_{nz}$ symmetry with n>2. First principles density functional calculation confirm the realization of these fermions in twisted $α$-In$_2$Se$_3$ bilayers, where flat bands and out-of-plane ferroelectric polarization in each layer guarantee two-dimensional Kramers-Weyl physics with perfectly ideal radial spin textures.
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Submitted 10 September, 2024;
originally announced September 2024.
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Linear Magnetoelectric Electro-Optic Effect
Authors:
D. J. P. de Sousa,
C. O. Ascencio,
Tony Low
Abstract:
In this work, we derive a generalized constitutive relation describing the current response to external electromagnetic fields in electrically biased quantum materials. While our semiclassical Boltzmann approach reveals the existence of electro-optic effects induced by the Berry curvature dipole of Bloch electrons, we also find a wealth of alternative electro-optic effects originating from the int…
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In this work, we derive a generalized constitutive relation describing the current response to external electromagnetic fields in electrically biased quantum materials. While our semiclassical Boltzmann approach reveals the existence of electro-optic effects induced by the Berry curvature dipole of Bloch electrons, we also find a wealth of alternative electro-optic effects originating from the interplay between Berry curvature and magnetic moment. In particular, our symmetry analysis indicates the existence of a magnetoelectric electro-optic effect, derived from the simultaneous presence of Berry curvature and magnetic moment, that requires either time-reversal or inversion symmetry breaking. The revealed conductivity coefficients are explicitly written and we derive the tensor shape describing such alternative electromagnetic responses for chiral materials pertaining to space groups 152 and 198.
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Submitted 5 August, 2024;
originally announced August 2024.
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Moiré polar vortex, flat bands and Lieb lattice in twisted bilayer BaTiO$_3$
Authors:
Seungjun Lee,
D. J. P. de Sousa,
Bharat Jalan,
Tony Low
Abstract:
Advances in material fabrication techniques and growth methods have opened up a new chapter for twistronics, in the form of twisted freestanding three-dimensional material membranes. Through first-principles calculations based on density functional theory, we investigate the crystal and electronic structures of twisted bilayer BaTiO$_3$. Our findings reveal that large stacking fault energy leads t…
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Advances in material fabrication techniques and growth methods have opened up a new chapter for twistronics, in the form of twisted freestanding three-dimensional material membranes. Through first-principles calculations based on density functional theory, we investigate the crystal and electronic structures of twisted bilayer BaTiO$_3$. Our findings reveal that large stacking fault energy leads to chiral in-plane vortex pattern that was recently observed in experiments. Moreover, we also found non-zero out-of-plane local dipole moments, indicating that the strong interlayer interaction might offer promising strategy to stabilize ferroelectric order in the two-dimensional limit. Remarkably, the vortex pattern in the twisted BaTiO$_3$ bilayer support localized electronic states with quasi-flat bands, associated with the interlayer hybridization of oxygen $p_z$ orbitals. We found that the associated band width reaches a minimum at $\sim$19$^{\circ}$ twisting, configuring the largest magic angle in moiré systems reported so far. Further, the moiré vortex pattern bears a striking resemblance to two interpenetrating Lieb lattices and corresponding tight-binding model provides a comprehensive description of the evolution the moiré bands with twist angle and reveals the topological nature of these states.
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Submitted 9 May, 2024;
originally announced May 2024.
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Spin dissymmetry in optical cavities
Authors:
Priyanuj Bordoloi,
Jefferson Dixon,
Zachary N. Mauri,
Christopher J. Ciccarino,
Feng Pan,
Tony Low,
Felipe H. da Jornada,
Jennifer A. Dionne
Abstract:
We introduce the spin dissymmetry factor, a measure of the spin-selectivity in the optical transition rate of quantum particles. This spin dissymmetry factor is valid locally, including at material interfaces and within optical cavities. We design and numerically demonstrate a metasurface optical cavity with three-fold rotational symmetry that maximizes spin dissymmetry, thereby maximizing the spi…
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We introduce the spin dissymmetry factor, a measure of the spin-selectivity in the optical transition rate of quantum particles. This spin dissymmetry factor is valid locally, including at material interfaces and within optical cavities. We design and numerically demonstrate a metasurface optical cavity with three-fold rotational symmetry that maximizes spin dissymmetry, thereby maximizing the spin-selective radiative coupling of a cavity-coupled emitter. We also show the near-field and far-field response of spin and chiral dipoles to these cavities that preferentially enhance either spin or chirality. Our approach emphasizes the difference between spin and chirality in the near-field and reveals a compact parameter for designing more efficient quantum optical devices.
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Submitted 27 March, 2026; v1 submitted 17 March, 2024;
originally announced March 2024.
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Giant piezoelectricity in group IV monochalcogenides with ferroelectric AA layer stacking
Authors:
Seungjun Lee,
Hyeong-Ryul Kim,
Wei Jiang,
Young-Kyun Kwon,
Tony Low
Abstract:
The piezoelectricity of group IV monochalcogenides (MXs, with M = Ge, Sn and X = S, Se) has attracted much attention due to their substantially higher piezoelectric coefficients compared to other 2D materials. However, with increasing layer number, their piezoelectricity rapidly disappears due to the antiferroelectric stacking order, severely limiting their practical applications. Using first-prin…
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The piezoelectricity of group IV monochalcogenides (MXs, with M = Ge, Sn and X = S, Se) has attracted much attention due to their substantially higher piezoelectric coefficients compared to other 2D materials. However, with increasing layer number, their piezoelectricity rapidly disappears due to the antiferroelectric stacking order, severely limiting their practical applications. Using first-principles calculations, we investigated the piezoelectricity of MXs with the ferroelectric AA stacking configuration, which has recently been stabilized in experiments. We found that AA-stacked MXs have a ferroelectric ground state with the smallest lattice constant among other stacking configurations, resulting in a giant piezoelectric coefficient, which is the first demonstration of a strategy where the piezoelectric coefficients can increase with the number of layers. This can be attributed to a strong negative correlation between the lattice constant along the armchair direction and the piezoelectric coefficient, and spontaneous compressive strain stabilized in ferroelectric AA stacking configuration.
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Submitted 6 February, 2024;
originally announced February 2024.
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Alternate cleavage structure and electronic inhomogeneity in Ca-doped YBa$_2$Cu$_3$O$_{7-δ}$
Authors:
Larissa B. Little,
Jennifer Coulter,
Ruizhe Kang,
Ilija Zeljkovic,
Dennis Huang,
Can-Li Song,
Toshinao Loew,
Han-Jong Chia,
Jason D. Hoffman,
John T. Markert,
Bernhard Keimer,
Boris Kozinsky,
Jennifer E. Hoffman
Abstract:
YBa$_2$Cu$_3$O$_{7-δ}$ (YBCO) has favorable macroscopic superconducting properties of $T_\mathrm{c}$ up to 93 K and $H_{c2}$ up to 150 T. However, its nanoscale electronic structure remains mysterious because bulk-like electronic properties are not preserved near the surface of cleaved samples for easy access by local or surface-sensitive probes. It has been hypothesized that Ca-doping at the Y si…
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YBa$_2$Cu$_3$O$_{7-δ}$ (YBCO) has favorable macroscopic superconducting properties of $T_\mathrm{c}$ up to 93 K and $H_{c2}$ up to 150 T. However, its nanoscale electronic structure remains mysterious because bulk-like electronic properties are not preserved near the surface of cleaved samples for easy access by local or surface-sensitive probes. It has been hypothesized that Ca-doping at the Y site could induce an alternate cleavage plane that mitigates this issue. We use scanning tunneling microscopy (STM) to study both Ca-free and 10% Ca-doped YBCO, and find that the Ca-doped samples do indeed cleave on an alternate plane, yielding a spatially-disordered partial (Y,Ca) layer. Our density functional theory calculations support the increased likelihood of this new cleavage plane in Ca-doped YBCO. On this surface, we image a superconducting gap with average value 24 $\pm$ 3 meV and characteristic length scale 1-2 nm, similar to Bi-based high-$T_\mathrm{c}$ cuprates, but the first map of gap inhomogeneity in the YBCO family.
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Submitted 7 February, 2024; v1 submitted 5 February, 2024;
originally announced February 2024.
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Signatures of two gaps in the spin susceptibility of a cuprate superconductor
Authors:
R. Zhou,
I. Vinograd,
M. Hirata,
T. Wu,
H. Mayaffre,
S. Krämer,
W. N. Hardy,
R. Liang,
D. A. Bonn,
T. Loew,
J. Porras,
B. Keimer,
M. -H. Julien
Abstract:
A major obstacle to understanding high-Tc cuprates is that superconductivity precludes observing normal-state properties at low temperatures. One prime example is the normal-state spin susceptibility \c{hi}spin: although its decrease upon cooling far above Tc typifies pseudogap behavior, its behavior at low temperatures is generally unknown. Here, our measurements in high magnetic fields expose \c…
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A major obstacle to understanding high-Tc cuprates is that superconductivity precludes observing normal-state properties at low temperatures. One prime example is the normal-state spin susceptibility \c{hi}spin: although its decrease upon cooling far above Tc typifies pseudogap behavior, its behavior at low temperatures is generally unknown. Here, our measurements in high magnetic fields expose \c{hi}spin of YBa2Cu3Oy down to low temperatures. Even though superconductivity is suppressed by the field, we uncover two thermally-activated contributions alongside a residual \c{hi}spin(T=0) due to gapless excitations. We relate these two distinct gaps to short-range charge-density waves and to the formation of singlets as in certain quantum spin systems. Both phenomena thus contribute to the pseudogap at low temperature, supplementing short-lived antiferromagnetism that initiates pseudogap behavior at high temperatures. We therefore propose that the pseudogap ought to be regarded as a composite property and that, when not undergoing spin-stripe ordering, underdoped cuprates tend to form short-ranged spin singlets.
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Submitted 13 February, 2025; v1 submitted 4 February, 2024;
originally announced February 2024.
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Control of charge-spin interconversion in van der Waals heterostructures with chiral charge density waves
Authors:
Zhendong Chi,
Seungjun Lee,
Haozhe Yang,
Eoin Dolan,
C. K. Safeer,
Josep Ingla-Aynés,
Franz Herling,
Nerea Ontoso,
Beatriz Martín-García,
Marco Gobbi,
Tony Low,
Luis E. Hueso,
Fèlix Casanova
Abstract:
A charge density wave (CDW) represents an exotic state in which electrons are arranged in a long range ordered pattern in low-dimensional materials. Although our understanding of the fundamental character of CDW has been enriched after extensive studies, its relationship with functional phenomena remains relatively limited. Here, we show an unprecedented demonstration of a tunable charge-spin inte…
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A charge density wave (CDW) represents an exotic state in which electrons are arranged in a long range ordered pattern in low-dimensional materials. Although our understanding of the fundamental character of CDW has been enriched after extensive studies, its relationship with functional phenomena remains relatively limited. Here, we show an unprecedented demonstration of a tunable charge-spin interconversion (CSI) in graphene/1T-TaS$_2$ van der Waals heterostructures by manipulating the distinct CDW phases in 1T-TaS$_2$. Whereas CSI from spins polarized in all three directions are observed in the heterostructure when the CDW phase does not show commensurability, the output of one of the components disappears and the other two are enhanced when the CDW phase becomes commensurate. The experimental observation is supported by first-principles calculations, which evidence that chiral CDW multidomains are at the origin of the switching of CSI. Our results uncover a new approach for on-demand CSI in low-dimensional systems, paving the way for advanced spin-orbitronic devices.
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Submitted 24 June, 2024; v1 submitted 16 January, 2024;
originally announced January 2024.
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Ferroelectric Semimetals with $α$-Bi/SnSe van der Waals heterostructures and its Topological Currents
Authors:
D. J. P. de Sousa,
Seungjun Lee,
Qiangsheng Lu,
Rob G. Moore,
Matthew Brahlek,
J-. P. Wang,
Guang Bian,
Tony Low
Abstract:
We show that proximity effects can be utilized to engineer van der Waals heterostructures (vd- WHs) displaying spin-ferroelectricity locking, where ferroelectricity and spin states are confined to different layers, but are correlated by means of proximity effects. Our findings are supported by first principles calculations in $α$-Bi/SnSe bilayers. We show that such systems support ferroelectricall…
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We show that proximity effects can be utilized to engineer van der Waals heterostructures (vd- WHs) displaying spin-ferroelectricity locking, where ferroelectricity and spin states are confined to different layers, but are correlated by means of proximity effects. Our findings are supported by first principles calculations in $α$-Bi/SnSe bilayers. We show that such systems support ferroelectrically switchable non-linear anomalous Hall effect originating from large Berry curvature dipoles as well as direct and inverse spin Hall effects with giant bulk spin-charge interconversion efficiencies. The giant efficiencies are consequences of the proximity-induced semimetallic nature of low energy electron states, which are shown to behave as two-dimensional pseudo-Weyl fermions by means of symmetry analysis, first principles calculations as well as direct angle-resolved photoemission spectroscopy measurements.
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Submitted 29 November, 2023;
originally announced November 2023.
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Plasmon dispersion in bilayer cuprate superconductors
Authors:
M. Bejas,
V. Zimmermann,
D. Betto,
T. D. Boyko,
R. J. Green,
T. Loew,
N. B. Brookes,
G. Cristiani,
G. Logvenov,
M. Minola,
B. Keimer,
H. Yamase,
A. Greco,
M. Hepting
Abstract:
The essential building blocks of cuprate superconductors are two-dimensional CuO$_2$ sheets interspersed with charge reservoir layers. In bilayer cuprates, two closely spaced CuO$_2$ sheets are separated by a larger distance from the subsequent pair in the next unit cell. In contrast to single-layer cuprates, prior theoretical work on bilayer systems has predicted two distinct acoustic plasmon ban…
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The essential building blocks of cuprate superconductors are two-dimensional CuO$_2$ sheets interspersed with charge reservoir layers. In bilayer cuprates, two closely spaced CuO$_2$ sheets are separated by a larger distance from the subsequent pair in the next unit cell. In contrast to single-layer cuprates, prior theoretical work on bilayer systems has predicted two distinct acoustic plasmon bands for a given out-of-plane momentum transfer. Here we report random phase approximation (RPA) calculations for bilayer systems which corroborate the existence of two distinct plasmons bands. We find that the intensity of the lower-energy band is negligibly small, whereas the higher-energy band carries significant spectral weight. We also present resonant inelastic x-ray scattering (RIXS) experiments at the O $K$-edge on the bilayer cuprate Y$_{0.85}$Ca$_{0.15}$Ba$_2$Cu$_3$O$_7$ (Ca-YBCO), which show only one dispersive plasmon branch, in agreement with the RPA calculations. In addition, the RPA results indicate that the dispersion of the higher-energy plasmon band in Ca-YBCO is not strictly acoustic, but exhibits a substantial energy gap of approximately 250 meV at the two-dimensional Brillouin zone center.
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Submitted 13 May, 2024; v1 submitted 2 November, 2023;
originally announced November 2023.
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Transport Study of Charge Carrier Scattering in Monolayer WSe$_2$
Authors:
Andrew Y. Joe,
Kateryna Pistunova,
Kristen Kaasbjerg,
Ke Wang,
Bumho Kim,
Daniel A. Rhodes,
Takashi Taniguchi,
Kenji Watanabe,
James Hone,
Tony Low,
Luis A. Jauregui,
Philip Kim
Abstract:
Employing flux-grown single crystal WSe$_2$, we report charge carrier scattering behaviors measured in $h$-BN encapsulated monolayer field effect transistors. We perform quantum transport measurements across various hole densities and temperatures and observe a non-monotonic change of transport mobility $μ$ as a function of hole density in the degenerately doped sample. This unusual behavior can b…
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Employing flux-grown single crystal WSe$_2$, we report charge carrier scattering behaviors measured in $h$-BN encapsulated monolayer field effect transistors. We perform quantum transport measurements across various hole densities and temperatures and observe a non-monotonic change of transport mobility $μ$ as a function of hole density in the degenerately doped sample. This unusual behavior can be explained by energy dependent scattering amplitude of strong defects calculated using the T-matrix approximation. Utilizing long mean-free path ($>$500 nm), we demonstrate the high quality of our electronic devices by showing quantized conductance steps from an electrostatically-defined quantum point contact. Our results show the potential for creating ultra-high quality quantum optoelectronic devices based on atomically thin semiconductors.
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Submitted 10 October, 2023; v1 submitted 6 October, 2023;
originally announced October 2023.
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Enhanced Spin Hall Response From Aligned Kramers-Weyl Points in High Chern Number Semimetals
Authors:
C. O. Ascencio,
Wei Jiang,
D. J. P. de Sousa,
Seungjun Lee,
Jian-Ping Wang,
Tony Low
Abstract:
We propose a spin Hall effect (SHE) enhancement mechanism due to Kramers-Weyl point (KWP) alignment in chiral topological semimetals with high Chern numbers (CNs). Through model Hamiltonian calculations, we identify enhancements in the intrinsic spin Hall conductivity (SHC) and the spin Hall angle (SHA). Such enhancements, attributed to a unique high CN KWP energetic alignment and a high degree of…
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We propose a spin Hall effect (SHE) enhancement mechanism due to Kramers-Weyl point (KWP) alignment in chiral topological semimetals with high Chern numbers (CNs). Through model Hamiltonian calculations, we identify enhancements in the intrinsic spin Hall conductivity (SHC) and the spin Hall angle (SHA). Such enhancements, attributed to a unique high CN KWP energetic alignment and a high degree of SOC-induced band nesting, strongly depend on orbital-orbital interactions. This represents a novel mechanism to enhance SHE, differing from the spin-orbit induced anticrossing mechanism in gapped systems. Guided by this principle, we corroborate our results by means of first-principles calculations and reveal multiple realistic materials with large intrinsic SHCs and even larger SHAs than Pt.
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Submitted 16 July, 2023;
originally announced July 2023.
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Helical boundary modes from synthetic spin in a plasmonic lattice
Authors:
Sang Hyun Park,
Michael Sammon,
Eugene Mele,
Tony Low
Abstract:
Artificial lattices have been used as a platform to extend the application of topological physics beyond electronic systems. Here, using the two-dimensional Lieb lattice as a prototypical example, we show that an array of disks which each support localized plasmon modes give rise to an analog of the quantum spin Hall state enforced by a synthetic time reversal symmetry. We find that an effective n…
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Artificial lattices have been used as a platform to extend the application of topological physics beyond electronic systems. Here, using the two-dimensional Lieb lattice as a prototypical example, we show that an array of disks which each support localized plasmon modes give rise to an analog of the quantum spin Hall state enforced by a synthetic time reversal symmetry. We find that an effective next-nearest-neighbor coupling mechanism intrinsic to the plasmonic disk array introduces a nontrivial $Z_2$ topological order and gaps out the Bloch spectrum. A faithful mapping of the plasmonic system onto a tight-binding model is developed and shown to capture its essential topological signatures. Full wave numerical simulations of graphene disks arranged in a Lieb lattice confirm the existence of propagating helical boundary modes in the nontrivial band gap.
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Submitted 21 May, 2023;
originally announced May 2023.
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Observation and enhancement of room temperature bilinear magnetoelectric resistance in sputtered topological semimetal Pt3Sn
Authors:
Yihong Fan,
Zach Cresswell,
Yifei Yang,
Wei Jiang,
Yang Lv,
Thomas Peterson,
Delin Zhang,
Jinming Liu,
Tony Low,
Jian-ping Wang
Abstract:
Topological semimetal materials have become a research hotspot due to their intrinsic strong spin-orbit coupling which leads to large charge-to-spin conversion efficiency and novel transport behaviors. In this work, we have observed a bilinear magnetoelectric resistance (BMER) of up to 0.1 nm2A-1Oe-1 in a singlelayer of sputtered semimetal Pt3Sn at room temperature. Different from previous observa…
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Topological semimetal materials have become a research hotspot due to their intrinsic strong spin-orbit coupling which leads to large charge-to-spin conversion efficiency and novel transport behaviors. In this work, we have observed a bilinear magnetoelectric resistance (BMER) of up to 0.1 nm2A-1Oe-1 in a singlelayer of sputtered semimetal Pt3Sn at room temperature. Different from previous observations, the value of BMER in sputtered Pt3Sn does not change out-of-plane due to the polycrystalline nature of Pt3Sn. The observation of BMER provides strong evidence of the existence of spin-momentum locking in the sputtered polycrystalline Pt3Sn. By adding an adjacent CoFeB magnetic layer, the BMER value of this bilayer system is doubled compared to the single Pt3Sn layer. This work broadens the material system in BMER study, which paves the way for the characterization of topological states and applications for spin memory and logic devices.
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Submitted 24 May, 2023; v1 submitted 18 May, 2023;
originally announced May 2023.
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Robust negative longitudinal magnetoresistance and spin-orbit torque in sputtered Pt3Sn topological semimetal
Authors:
Delin Zhang,
Wei Jiang,
Hwanhui Yun,
Onri Jay Benally,
Thomas Peterson,
Zach Cresswell,
Yihong Fan,
Yang Lv,
Guichuan Yu,
Javier Garcia Barriocanal,
Przemyslaw Swatek,
K. Andre Mkhoyan,
Tony Low,
Jian-Ping Wang
Abstract:
Contrary to topological insulators, topological semimetals possess a nontrivial chiral anomaly that leads to negative magnetoresistance and are hosts to both conductive bulk states and topological surface states with intriguing transport properties for spintronics. Here, we fabricate highly-ordered metallic Pt3Sn and Pt3SnxFe1-x thin films via sputtering technology. Systematic angular dependence (…
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Contrary to topological insulators, topological semimetals possess a nontrivial chiral anomaly that leads to negative magnetoresistance and are hosts to both conductive bulk states and topological surface states with intriguing transport properties for spintronics. Here, we fabricate highly-ordered metallic Pt3Sn and Pt3SnxFe1-x thin films via sputtering technology. Systematic angular dependence (both in-plane and out-of-plane) study of magnetoresistance presents surprisingly robust quadratic and linear negative longitudinal magnetoresistance features for Pt3Sn and Pt3SnxFe1-x, respectively. We attribute the anomalous negative longitudinal magnetoresistance to the type-II Dirac semimetal phase (pristine Pt3Sn) and/or the formation of tunable Weyl semimetal phases through symmetry breaking processes, such as magnetic-atom doping, as confirmed by first-principles calculations. Furthermore, Pt3Sn and Pt3SnxFe1-x show the promising performance for facilitating the development of advanced spin-orbit torque devices. These results extend our understanding of chiral anomaly of topological semimetals and can pave the way for exploring novel topological materials for spintronic devices.
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Submitted 9 May, 2023;
originally announced May 2023.
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Universality of the {\bf q}=1/2 Orbital Magnetism in the Pseudogap Phase of the High-$T_c$ superconductor $\rm YBa_{2}Cu_{3}O_{6+x}$
Authors:
Dalila Bounoua,
Yvan Sidis,
Martin Boehm,
Paul Steffens,
Toshinao Loew,
Lin Shan Guo,
Jun Qian,
Xin Yao,
Philippe Bourges
Abstract:
Several decades of debate have centered around the nature of the enigmatic pseudo-gap state in high temperature superconducting copper oxides. Recently, we reported polarized neutron diffraction measurements that suggested the existence of a magnetic texture bound to the pseudo-gap phase [Bounoua, {\it et al}. Communications Physics 5, 268 (2022)]. Such a magnetic texture is likely to involve the…
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Several decades of debate have centered around the nature of the enigmatic pseudo-gap state in high temperature superconducting copper oxides. Recently, we reported polarized neutron diffraction measurements that suggested the existence of a magnetic texture bound to the pseudo-gap phase [Bounoua, {\it et al}. Communications Physics 5, 268 (2022)]. Such a magnetic texture is likely to involve the spontaneous appearance of loop currents within the CuO$_2$ unit cells, which give birth to complex correlated patterns. In the underdoped ${\rm YBa_{2}Cu_{3}O_{6.6}}$, the magnetic structure factor of such an orbital magnetic texture gives rise to two distinct magnetic responses at {\bf q}=0 and {\bf q}=1/2. As this pattern alters the lattice translation invariance, such a state of matter could contribute to an instability of the Fermi surface. Here, we report polarized neutron scattering measurements on a nearly optimally doped high quality single crystal of ${\rm YBa_{2}Cu_{3}O_{6.9}}$ that exhibits the same {\bf q}=1/2 magnetism and a weakly overdoped ${\rm YBa_{2}Cu_{3}O_{7}}$ sample where this signal is no longer sizeable. The in-plane and out-of-plane magnetic neutron scattering intensities in ${\rm YBa_{2}Cu_{3}O_{6.9}}$ (at {\bf q}=1/2) and ${\rm YBa_{2}Cu_{3}O_{6.85}}$ (at {\bf q}=0), reported previously, display the same temperature dependent hallmarks. The magnitudes of both {\bf q}=0 and {\bf q}=1/2 magnetic signals further exhibit the same trends upon doping in ${\rm YBa_{2}Cu_{3}O_{6+x}}$, confirming that they are likely intertwined.
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Submitted 26 November, 2023; v1 submitted 3 February, 2023;
originally announced February 2023.
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Field-free-switching state diagram of perpendicular magnetization subjected to conventional and unconventional spin-orbit torques
Authors:
D. J. P. de Sousa,
P. M. Haney,
J. P. Wang,
Tony Low
Abstract:
The lack of certain crystalline symmetries in strong spin-orbit-coupled non-magnetic materials allows for the existence of uncoventional spin Hall responses, with electrically generated transverse spin currents possessing collinear flow and spin directions. The injection of such spin currents into an adjacent ferromagnetic layer can excite magnetization dynamics via unconventional spin-orbit torqu…
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The lack of certain crystalline symmetries in strong spin-orbit-coupled non-magnetic materials allows for the existence of uncoventional spin Hall responses, with electrically generated transverse spin currents possessing collinear flow and spin directions. The injection of such spin currents into an adjacent ferromagnetic layer can excite magnetization dynamics via unconventional spin-orbit torques, leading to deterministic switching in ferromagnets with perpendicular magnetic anisotropy. We study the interplay between conventional and unconventional spin-orbit torques on the magnetization dynamics of a perpendicular ferromagnet in the small intrinsic damping limit, and identify a rich set of dynamical regimes that includes deterministic and probabilistic switching, precessional and pinning states. Contrary to common belief, we found that there exists a critical conventional spin Hall angle, beyond which deterministic magnetization switching transitions to a precessional or pinned state. Conversely, we showed that larger unconventional spin Hall angle is generally beneficial for deterministic switching. We derive an approximate expression that qualitatively describes the state diagram boundary between the full deterministic switching and precessional states and discuss a criterion for searching symmetry-broken spin Hall materials in order to maximize switching efficiency. Our work offers a roadmap towards energy efficient spintronic devices, which might opens doors for applications in advanced in-memory computing technologies.
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Submitted 28 October, 2022;
originally announced October 2022.
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Room temperature spin-orbit torque efficiency in sputtered low-temperature superconductor delta-TaN
Authors:
Przemyslaw Wojciech Swatek,
Xudong Hang,
Yihong Fan,
Wei Jiang,
Hwanhui Yun,
Deyuan Lyu,
Delin Zhang,
Thomas J. Peterson,
Protyush Sahu,
Onri Jay Benally,
Zach Cresswell,
Jinming Liu,
Rabindra Pahari,
Daniel Kukla,
Tony Low,
K. Andre Mkhoyan,
Jian-Ping Wang
Abstract:
In the course of searching for promising topological materials for applications in future topological electronics, we evaluated spin-orbit torques (SOTs) in high-quality sputtered $δ-$TaN/Co20Fe60B20 devices through spin-torque ferromagnetic resonance ST-FMR and spin pumping measurements. From the ST-FMR characterization we observed a significant linewidth modulation in the magnetic Co20Fe60B20 la…
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In the course of searching for promising topological materials for applications in future topological electronics, we evaluated spin-orbit torques (SOTs) in high-quality sputtered $δ-$TaN/Co20Fe60B20 devices through spin-torque ferromagnetic resonance ST-FMR and spin pumping measurements. From the ST-FMR characterization we observed a significant linewidth modulation in the magnetic Co20Fe60B20 layer attributed to the charge-to-spin conversion generated from the $δ-$TaN layer. Remarkably, the spin-torque efficiency determined from ST-FMR and spin pumping measurements is as large as $Θ =$ 0.034 and 0.031, respectively. These values are over two times larger than for $α-$Ta, but almost five times lower than for $β-$Ta, which can be attributed to the low room temperature electrical resistivity $\sim 74μΩ$ cm in $δ-$TaN. A large spin diffusion length of at least $\sim8$ nm is estimated, which is comparable to the spin diffusion length in pure Ta. Comprehensive experimental analysis, together with density functional theory calculations, indicates that the origin of the pronounced SOT effect in $δ-$TaN can be mostly related to a significant contribution from the Berry curvature associated with the presence of a topically nontrivial electronic band structure in the vicinity of the Fermi level (EF). Through additional detailed theoretical analysis, we also found that an isostructural allotrope of the superconducting $δ-$TaN phase, the simple hexagonal structure, $θ-$TaN, has larger Berry curvature, and that, together with expected reasonable charge conductivity, it can also be a promising candidate for exploring a generation of spin-orbit torque magnetic random access memory as cheap, temperature stable, and highly efficient spin current sources.
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Submitted 29 July, 2022; v1 submitted 18 July, 2022;
originally announced July 2022.
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Spin Torque Generated by Valley Hall Effect in WSe2
Authors:
D. J. P. de Sousa,
M. J. Sammon,
Raseong Kim,
Hai Li,
Ian A. Young,
Tony Low
Abstract:
Monolayer transition metal dichalcogenides are promising materials for spintronics due to their robust spin-valley locked valence states, enabling efficient charge-to-spin conversion via valley Hall effect with non-equilibrium spins possessing long spin diffusion lengths of hundreds of nanometers. In this work, we show that the injection of a pure valley current, induced by valley Hall effect in a…
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Monolayer transition metal dichalcogenides are promising materials for spintronics due to their robust spin-valley locked valence states, enabling efficient charge-to-spin conversion via valley Hall effect with non-equilibrium spins possessing long spin diffusion lengths of hundreds of nanometers. In this work, we show that the injection of a pure valley current, induced by valley Hall effect in a WSe2 monolayer, imparts a spin torque on the magnetization of an overlaid Fe or CoFe in a tunneling structure. The torque efficiency is found to be comparable to that in conventional perpendicular magnetic tunnel junctions and can be further optimized with valley Hall angle in WSe2. The valley nature of the spin torque gives rise to out-of-plane damping-like torques in a current-in-plane configuration, vanishing charge transport perpendicular-to-the-plane as well as torque efficiency tunable through gating.
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Submitted 20 June, 2022;
originally announced June 2022.
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Charge-to-spin conversion in twisted graphene/WSe$_2$ heterostructures
Authors:
Seungjun Lee,
D. J. P. de Sousa,
Young-Kyun Kwon,
Fernando de Juan,
Zhendong Chi,
Fèlix Casanova,
Tony Low
Abstract:
We investigate the twist angle dependence of spin-orbit coupling (SOC) proximity effects and charge-to-spin conversion (CSC) in graphene/WSe$_2$ heterostructures from first principles. The CSC is shown to strongly depend on the twist angle, with both the spin Hall and standard Rashba-Edelstein efficiencies optimized at or near 30° twisting. Symmetry breaking due to twisting also gives rise to an u…
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We investigate the twist angle dependence of spin-orbit coupling (SOC) proximity effects and charge-to-spin conversion (CSC) in graphene/WSe$_2$ heterostructures from first principles. The CSC is shown to strongly depend on the twist angle, with both the spin Hall and standard Rashba-Edelstein efficiencies optimized at or near 30° twisting. Symmetry breaking due to twisting also gives rise to an unconventional Rashba-Edelstein effect, with electrically generated non-equilibrium spin densities possessing spins collinear to the applied electric field. We further discuss how the carrier doping concentration and band broadening control the crossover between the Fermi-sea and -surface spin response, which reconciles the seemingly disparate experimental observations of different CSC phenomena.
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Submitted 19 June, 2022;
originally announced June 2022.
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Plasmonic gain in current biased tilted Dirac nodes
Authors:
Sang Hyun Park,
Michael Sammon,
Eugene Mele,
Tony Low
Abstract:
Surface plasmons, which allow extreme confinement of light, suffer from high intrinsic electronic losses. It has been shown that stimulated emission of electrons can transfer energy to plasmons and compensate for the high intrinsic losses. To-date, these realizations have relied on introducing an external gain media coupled to the surface plasmon. Here, we propose that plasmons in two-dimensional…
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Surface plasmons, which allow extreme confinement of light, suffer from high intrinsic electronic losses. It has been shown that stimulated emission of electrons can transfer energy to plasmons and compensate for the high intrinsic losses. To-date, these realizations have relied on introducing an external gain media coupled to the surface plasmon. Here, we propose that plasmons in two-dimensional materials with closely located electron and hole Fermi pockets can experience gain, when an electrical current bias is applied along the displaced electron-hole pockets, without the need for an external gain media. As a prototypical example, we consider WTe$_2$ from the family of 1T$'$-MX$_2$ materials, whose electronic structure can be described within a type-II tilted massive Dirac model. We find that the nonlocal plasmonic response experiences prominent gain for experimentally accessible currents on the order of mA$μ$m$^{-1}$. Furthermore, the group velocity of the plasmon found from the isofrequency curves imply that the amplified plasmons are highly collimated along a direction perpendicular to the Dirac node tilt when the electrical current is applied along it.
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Submitted 8 June, 2022;
originally announced June 2022.
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Convert widespread paraelectric perovskite to ferroelectrics
Authors:
Hongwei Wang,
Fujie Tang,
Massimiliano Stengel,
Hongjun Xiang,
Qi An,
Tony Low,
Xifan Wu
Abstract:
While nature provides a plethora of perovskite materials, only a few exhibits large ferroelectricity and possibly multiferroicity. The majority of perovskite materials have the non-polar CaTiO$_3$(CTO)structure, limiting the scope of their applications. Based on effective Hamiltonian model as well as first-principles calculations, we propose a general thin-film design method to stabilize the funct…
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While nature provides a plethora of perovskite materials, only a few exhibits large ferroelectricity and possibly multiferroicity. The majority of perovskite materials have the non-polar CaTiO$_3$(CTO)structure, limiting the scope of their applications. Based on effective Hamiltonian model as well as first-principles calculations, we propose a general thin-film design method to stabilize the functional BiFeO$_3$(BFO)-type structure, which is a common metastable structure in widespread CaTiO$_3$-type perovskite oxides. It is found that the improper antiferroelectricity in CTO-type perovskite and ferroelectricity in BFO-type perovskite have distinct dependences on mechanical and electric boundary conditions, both of which involve oxygen octahedral rotation and tilt. The above difference can be used to stabilize the highly polar BFO-type structure in many CTO-type perovskite materials.
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Submitted 2 April, 2022;
originally announced April 2022.
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Hidden Magnetic Texture in the Pseudogap Phase of High-Tc $YBa_{2}Cu_{3}O_{6.6}$
Authors:
Dalila Bounoua,
Yvan Sidis,
Toshinao Loew,
Fréderic Bourdarot,
Martin Boehm,
Paul Steffens,
Lucile Mangin-Thro,
Victor Balédent,
Philippe Bourges
Abstract:
Despite decades of intense researches, the enigmatic pseudo-gap (PG) phase of superconducting cuprates remains an unsolved mystery. In the last 15 years, various symmetry breakings in the PG state have been discovered, spanning an intra-unit cell (IUC) magnetism, preserving the lattice translational (LT) symmetry but breaking time-reversal symmetry and parity, and an additional incipient charge de…
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Despite decades of intense researches, the enigmatic pseudo-gap (PG) phase of superconducting cuprates remains an unsolved mystery. In the last 15 years, various symmetry breakings in the PG state have been discovered, spanning an intra-unit cell (IUC) magnetism, preserving the lattice translational (LT) symmetry but breaking time-reversal symmetry and parity, and an additional incipient charge density wave breaking the LT symmetry upon cooling. However, none of these states can (alone) account for the partial gapping of the Fermi surface. Here we report a hidden LT-breaking magnetism uisng polarized neutron diffraction. Our measurements reveal magnetic correlations, in two different underdoped $\rm YBa_{2}Cu_{3}O_{6.6}$ single crystals, that settle at the PG onset temperature with i) a planar propagation wave vector $(π,0) \equiv (0,π)$, yielding a doubling or quadrupling of the magnetic unit cell and ii) magnetic moments mainly pointing perpendicular to the $CuO_{2}$ layers. The LT-breaking magnetism is at short range suggesting the formation of clusters of 5-6 unit cells. Together with the previously reported IUC magnetism, it yields a hidden magnetic texture of the $CuO_{2}$ unit cells hosting loop currents, forming large supercells which may be crucial for elucidating the PG puzzle.
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Submitted 20 May, 2022; v1 submitted 31 October, 2021;
originally announced November 2021.