Showing 1–1 of 1 results for author: Lai, W T

Transient tunneling current of single electron transistors

Authors: David M. -T. Kuo, Pei-Wen Li, W. T. Lai

Abstract: The transient tunneling current of single electron transistors (SETs) is theoretically investigated. The time-dependent current formula given by Jauho, Wingreen and Meir [Phys. Rev. B 50, 5528 (1994)] is applied to study the temperature effect on the transient current through a single quantum dot embedded into asymmetry barrier. It is found that the tunneling rate ratio significantly influences… ▽ More The transient tunneling current of single electron transistors (SETs) is theoretically investigated. The time-dependent current formula given by Jauho, Wingreen and Meir [Phys. Rev. B 50, 5528 (1994)] is applied to study the temperature effect on the transient current through a single quantum dot embedded into asymmetry barrier. It is found that the tunneling rate ratio significantly influences the feature of transient current. Finally, the oscillation structures on the exponential growth transient current of single hole transistors composed of germanium quantum dots is analyzed. △ Less

Submitted 16 December, 2005; originally announced December 2005.

Comments: 4 pages and 9 figures