Epitaxial MgSnN2 on 4H-SiC (0001): An Earth-Abundant Nitride for Green Optoelectronics and Photovoltaics
Authors:
D. Gogova,
D. Tran,
V. Stanishev,
D. Shafizadeh,
C. -L. Hsiao,
M. Kim,
B. Pécz,
A. Kovács,
K. Frey,
A. Sulyok,
N. K. Singh,
A. Le Febvrier,
P. Eklund,
V. Darakchieva
Abstract:
Group II-IV nitrides have recently emerged as a novel class of semiconductors composed of earth-abundant elements. Owing to their tunable bandgaps, comparable to those of III-nitrides, these materials are attractive candidates for replacing expensive Ga-based alloys in photovoltaics and green-gap optoelectronics. In this work, epitaxial growth of MgSnN2 layers on 4H-SiC(0001) substrates by direct…
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Group II-IV nitrides have recently emerged as a novel class of semiconductors composed of earth-abundant elements. Owing to their tunable bandgaps, comparable to those of III-nitrides, these materials are attractive candidates for replacing expensive Ga-based alloys in photovoltaics and green-gap optoelectronics. In this work, epitaxial growth of MgSnN2 layers on 4H-SiC(0001) substrates by direct current magnetron sputtering is demonstrated. Mg and Sn metal targets have been co-sputtered in nitrogen-containing atmosphere at growth temperatures up to 500 °C. X-ray diffraction and cross-sectional transmission electron microscopy confirm the MgSnN2 layers grow epitaxially in a wurtzite crystal structure, exhibiting the epitaxial relationships with the substrate: MgSnN2 [0001]//4H-SiC [0001] and MgSnN2 [10-10]//4H-SiC[10-10]. Improved crystalline quality is observed for higher deposition temperatures and near-stoichiometric composition, as evidenced by the narrowing of rocking curve linewidths. Optical characterization reveals high absorption coefficients (1e5 cm-1) in the visible spectrum, comparable to that of GaAs, highlighting the suitability of MgSnN2 for photovoltaic applications. A photoluminescence emission band at ~2.4 eV is detected, highly desirable for optoelectronic devices operating in the challenging green spectral region. These results establish MgSnN2 as an earth-abundant, environmentally friendly material, structurally compatible with III-nitrides, with potential for cost-efficient components in sustainable optoelectronics and photovoltaics.
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Submitted 6 April, 2026;
originally announced April 2026.
Bott Periodicity and Realizations of Chiral Symmetry in Arbitrary Dimensions
Authors:
Richard DeJonghe,
Kimberly Frey,
Tom Imbo
Abstract:
We compute the chiral symmetries of the Lagrangian for confining "vector-like" gauge theories with massless fermions in $d$-dimensional Minkowski space and, under a few reasonable assumptions, determine the form of the quadratic fermion condensates which arise through spontaneous breaking of these symmetries. We find that for each type (complex, real, or pseudoreal) of representation of the gauge…
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We compute the chiral symmetries of the Lagrangian for confining "vector-like" gauge theories with massless fermions in $d$-dimensional Minkowski space and, under a few reasonable assumptions, determine the form of the quadratic fermion condensates which arise through spontaneous breaking of these symmetries. We find that for each type (complex, real, or pseudoreal) of representation of the gauge group carried by the fermions, the chiral symmetries of the Lagrangian, as well as the residual symmetries after dynamical breaking, exactly follow the pattern of Bott periodicity as the dimension changes. The consequences of this for the topological features of the low-energy effective theory are considered.
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Submitted 26 October, 2012; v1 submitted 24 July, 2012;
originally announced July 2012.