Highly-Sensitive Resonance-Enhanced Organic Photodetectors for Shortwave Infrared Sensing
Authors:
Hoang Mai Luong,
Chokchai Kaiyasuan,
Ahra Yi,
Sangmin Chae,
Brian Minki Kim,
Patchareepond Panoy,
Hyo Jung Kim,
Vinich Promarak,
Yasuo Miyata,
Hidenori Nakayama,
Thuc-Quyen Nguyen
Abstract:
Shortwave infrared (SWIR) has various applications, including night vision, remote sensing, and medical imaging. SWIR organic photodetectors (OPDs) offer advantages such as flexibility, cost-effectiveness, and tunable properties, however, lower sensitivity and limited spectral coverage compared to inorganic counterparts are major drawbacks. Here, we propose a simple yet effective and widely applic…
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Shortwave infrared (SWIR) has various applications, including night vision, remote sensing, and medical imaging. SWIR organic photodetectors (OPDs) offer advantages such as flexibility, cost-effectiveness, and tunable properties, however, lower sensitivity and limited spectral coverage compared to inorganic counterparts are major drawbacks. Here, we propose a simple yet effective and widely applicable strategy to extend the wavelength detection range of OPD to a longer wavelength, using resonant optical microcavity. We demonstrate a proof-of-concept in PTB7-Th:COTIC-4F blend system, achieving external quantum efficiency (EQE) > 50 % over a broad spectrum 450 - 1100 nm with a peak specific detectivity (D*) of 1.1E13 Jones at 1100 nm, while cut-off bandwidth, speed, and linearity are preserved. By employing a novel small-molecule acceptor IR6, a record high EQE = 35 % and D* = 4.1E12 Jones are obtained at 1150 nm. This research emphasizes the importance of optical design in optoelectronic devices, presenting a considerably simpler method to expand the photodetection range compared to a traditional approach that involves developing absorbers with narrow optical gaps.
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Submitted 13 September, 2023;
originally announced September 2023.
High-Performance Carbon Nanotube Transistors on SrTiO3/Si Substrates
Authors:
B. M. Kim,
T. Brintlinger,
E. Cobas,
Haimei Zheng,
M. S. Fuhrer,
Z. Yu,
R. Droopad,
J. Ramdani,
K. Eisenbeiser
Abstract:
Single-walled carbon nanotubes (SWNTs) have been grown via chemical vapor deposition on high-kappa dielectric SrTiO3/Si substrates, and high-performance semiconducting SWNT field-effect transistors have been fabricated using the thin SrTiO3 as gate dielectric and Si as gate electrode. The transconductance per channel width is 8900 S/m. The high transconductance cannot be explained by the increas…
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Single-walled carbon nanotubes (SWNTs) have been grown via chemical vapor deposition on high-kappa dielectric SrTiO3/Si substrates, and high-performance semiconducting SWNT field-effect transistors have been fabricated using the thin SrTiO3 as gate dielectric and Si as gate electrode. The transconductance per channel width is 8900 S/m. The high transconductance cannot be explained by the increased gate capacitance; it is proposed that the increased electric field at the nanotube-electrode interface due to the high-kappa SrTiO3 decreases or eliminates the nanotube-electrode Schottky barrier.
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Submitted 28 January, 2004;
originally announced January 2004.