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Exploring the substrate-driven morphological changes in Nd0.6Sr0.4MnO3 thin films
Authors:
R S Mrinaleni,
E P Amaladass,
S Amirthapandian,
A. T. Sathyanarayana,
Jegadeesan P,
Ganesan K,
R M Sarguna,
P. N. Rao,
Pooja Gupta,
T Geetha Kumary,
S. K. Rai,
Awadhesh Mani
Abstract:
Manganite thin films are promising candidates for studying the strongly correlated electron systems. Understanding the growth-and morphology-driven changes in the physical properties of manganite thin films is vital for their applications in oxitronics. This work reports the morphological, structural, and electrical transport properties of nanostructured Nd0.6Sr0.4MnO3 (NSMO) thin films fabricated…
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Manganite thin films are promising candidates for studying the strongly correlated electron systems. Understanding the growth-and morphology-driven changes in the physical properties of manganite thin films is vital for their applications in oxitronics. This work reports the morphological, structural, and electrical transport properties of nanostructured Nd0.6Sr0.4MnO3 (NSMO) thin films fabricated using the pulsed laser deposition technique. Scanning electron microscopy (SEM) imaging of the thin films revealed two prominent surface morphologies: a granular and a unique crossed-nano-rod-type morphology. From X-ray diffraction (XRD) and atomic force microscopy (AFM) analysis, we found that the observed nanostructures resulted from altered growth modes occurring on the terraced substrate surface. Furthermore, investigations on the electrical-transport properties of thin films revealed that the films with crossed-nano-rod type morphology showed a sharp resistive transition near the metal-to-insulator transition (MIT). An enhanced temperature coefficient of resistance (TCR) of up to one order of magnitude was also observed compared to the films with granular morphology. Such enhancement in TCR % by tuning the morphology makes these thin films promising candidates for developing oxide-based temperature sensors and detectors.
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Submitted 13 January, 2023;
originally announced January 2023.
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Investigation of thickness dependent composition of boron carbide thin films by resonant soft x-ray reflectivity
Authors:
P. N. Rao,
R. K. Gupta,
K. Saravanan,
A. Bose,
S. C. Joshi,
T. Ganguli,
S. K. Rai
Abstract:
Boron carbide thin films of different thicknesses deposited by ion beam sputtering were studied. The deposited films were characterized by grazing incidence hard x-ray reflectivity (GIXR), resonant soft x-ray reflectivity (RSXR), x-ray photo electron spectroscopy (XPS), resonant Rutherford backscattering spectrometry (RRBS), and time of flight secondary ion mass spectrometry (TOF-SIMS). An in-dept…
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Boron carbide thin films of different thicknesses deposited by ion beam sputtering were studied. The deposited films were characterized by grazing incidence hard x-ray reflectivity (GIXR), resonant soft x-ray reflectivity (RSXR), x-ray photo electron spectroscopy (XPS), resonant Rutherford backscattering spectrometry (RRBS), and time of flight secondary ion mass spectrometry (TOF-SIMS). An in-depth profile of the chemical elements constitute the films is reconstructed based on analysis of reflectivity curves measured in the vicinity of B K-edge. The composition of films is closely dependent on film thickness. Boron to Carbon (B/C) ratio reaches to ~4 as the thickness of deposited films increases. The B/C ratio estimated from RSXR measurements are in agreement with the RRBS measurements. TOF-SIMS data also suggested that decrease in boron content with decrease in film thickness. XPS measurements confirm the presence of little amount of B atoms on the surface of low thickness film.
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Submitted 24 August, 2017;
originally announced August 2017.
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Observation of Geometry-Limited Mobility in Porous Silicon
Authors:
P. N. Rao,
E. A. Schiff,
L. Tsybeskov,
P. M. Fauchet
Abstract:
We report photocarrier time-of-flight measurements in diode structures made of highly porous crystalline silicon. The corresponding electron and hole drift mobilities are very small compared to homogeneous crystalline silicon. They show two additional signatures of semiclassical transport that are directly limited by a porous geometry: the mobilities are dispersive (i.e. dependent on time), and…
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We report photocarrier time-of-flight measurements in diode structures made of highly porous crystalline silicon. The corresponding electron and hole drift mobilities are very small compared to homogeneous crystalline silicon. They show two additional signatures of semiclassical transport that are directly limited by a porous geometry: the mobilities are dispersive (i.e. dependent on time), and have very little temperature-dependence. A pure, geometry-limited transport is surprising in the context of nanometer-scale models for electronic states such as quantum percolation or nanocrystal aggregation. In such models, confinement-induced energy shifts and localization are the dominant effects.
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Submitted 13 November, 1998;
originally announced November 1998.