Showing 1–8 of 8 results for author: Lun, Y

Polarization Vortices in a Ferromagnetic Metal via Twistronics

Authors: Yingzhuo Lun, Xinxin Hu, Qi Ren, Umair Saeed, Kapil Gupta, Bernat Mundet, Ivan Pinto-Huguet, Jose Santiso, Jessica Padilla-Pantoja, Jose Manuel Caicedo Roque, Yunpeng Ma, Qian Li, Gang Tang, David Pesquera, Xueyun Wang, Jiawang Hong, Jordi Arbiol, Gustau Catalan

Abstract: Recent advances in moire engineering provide new pathways for manipulating lattice distortions and electronic properties in low-dimensional materials. Here, we demonstrate that twisted stacking can induce dipolar vortices in metallic SrRuO3 membranes, despite the presence of free charges that would normally screen depolarizing fields and dipole-dipole interactions. These polarization vortices are… ▽ More Recent advances in moire engineering provide new pathways for manipulating lattice distortions and electronic properties in low-dimensional materials. Here, we demonstrate that twisted stacking can induce dipolar vortices in metallic SrRuO3 membranes, despite the presence of free charges that would normally screen depolarizing fields and dipole-dipole interactions. These polarization vortices are correlated with moire-periodic flexoelectricity induced by shear strain gradients, and exhibit a pronounced dependence on the twist angle. In addition, multiferroic behavior emerges below the ferromagnetic Curie temperature of the films, whereby polarization and ferromagnetism coexist and compete, showing opposite twist-angle dependencies of their respective magnitudes. Density functional theory calculations provide insights into the microscopic origin of these observations. Our findings extend the scope of polarization topology design beyond dielectric materials and into metals. △ Less

Submitted 10 August, 2026; v1 submitted 23 May, 2025; originally announced May 2025.

Comments: Manuscript(14 pages, 4 figures)+Supplementary Information

Nonlinear Breakdown of Antisymmetric Flexoelectric Coupling

Authors: Yingzhuo Lun, Yida Yang, Tingjun Wang, Qi Ren, Sang-Wook Cheong, Xueyun Wang, Jiawang Hong

Abstract: Flexoelectric coupling is conventionally regarded as antisymmetric, such that reversing the strain gradient reverses the polarization direction while preserving its magnitude. Here we report that this antisymmetric coupling breaks down in noncentrosymmetric single crystals driven by large strain gradients, where nonlinearity becomes operative. Harmonic-resolved measurements reveal robust even-orde… ▽ More Flexoelectric coupling is conventionally regarded as antisymmetric, such that reversing the strain gradient reverses the polarization direction while preserving its magnitude. Here we report that this antisymmetric coupling breaks down in noncentrosymmetric single crystals driven by large strain gradients, where nonlinearity becomes operative. Harmonic-resolved measurements reveal robust even-order flexoelectric harmonics that are forbidden in antisymmetric systems, as well as the three-wave mixing indicative of symmetry breaking under dual-frequency excitation. These frequency-relevant generations provide evidence for asymmetric flexoelectricity in the nonlinear regime. A reconstructed nonlinear constitutive framework consistently accounts for all observations by incorporating even-order strain-gradient terms. Our findings establish asymmetric flexoelectricity as an intrinsic electromechanical response and uncover a symmetry-breaking mechanism in flexoelectricity. △ Less

Submitted 12 June, 2026; v1 submitted 2 April, 2025; originally announced April 2025.

Journal ref: Phys. Rev. B 113, 214104 (2026)

Identifying Highly Deformable van der Waals Layered Chalcogenides with Superior Thermoelectric Performance Using Deformability Factors and Interpretable Machine Learning

Authors: Qi Ren, Yingzhuo Lun, Bonan Zhu, Gang Tang, Jiawang Hong

Abstract: Van der Waals layered chalcogenide-based flexible thermoelectric devices show great potential for applications in wearable electronics. However, materials that are both highly deformable and exhibit superior thermoelectric performance are extremely limited. There is an urgent need for methods that can efficiently predict both deformability and thermoelectric performance to enable high-throughput s… ▽ More Van der Waals layered chalcogenide-based flexible thermoelectric devices show great potential for applications in wearable electronics. However, materials that are both highly deformable and exhibit superior thermoelectric performance are extremely limited. There is an urgent need for methods that can efficiently predict both deformability and thermoelectric performance to enable high-throughput screening of these materials. In this study, over 1000 van der Waals layered chalcogenides were high-throughput screened from material databases, the deformability of which were predicted with our previously developed deformability factor. An accurate and efficient model based on machine learning methods were developed to predict the thermoelectric properties. Several candidate materials with both deformability and thermoelectric potential were successfully discovered. Among them, NbSe2Br2 was verified by first principles calculations, achieving ZTmax value of 1.35 at 1000K, which is currently the highest value among flexible inorganic thermoelectric materials. And the power factor value of 8.1 μWcm-1K-2 at 300K also surpassed most organic and inorganic flexible thermoelectric materials. Its high deformability mainly attributed to the small slipping energy that allows interlayer slip and the small in-plane modulus that allows deformation before failure. The high ZTmax is mainly contributed by the extremely low thermal conductivity and the high Seebeck coefficient along the out-of-plane direction at high temperature. The high power factor at room temperature is mainly comes from the high conductivity in the in-plane direction. This study is expected to accelerate the development and application of flexible thermoelectric devices based on inorganic semiconductor materials. △ Less

Submitted 7 October, 2024; originally announced October 2024.

Zero Poisson' s Ratio and Suppressed Mechanical Anisotropy in BP/SnSe Van der Waals Heterostructure: A First-principles Study

Authors: Qi Ren, Xingyao Wang, Yingzhuo Lun, Xueyun Wang, Jiawang Hong

Abstract: Black phosphorene and its analogs have attracted intensive attention due to their unique puckered structures, anisotropic characteristics, and negative Poisson's ratio. The van der Waals heterostructures assembly by stacking different materials may show novel physical properties which the parent materials don't possess. In this work, the first-principles calculations were performed to study the me… ▽ More Black phosphorene and its analogs have attracted intensive attention due to their unique puckered structures, anisotropic characteristics, and negative Poisson's ratio. The van der Waals heterostructures assembly by stacking different materials may show novel physical properties which the parent materials don't possess. In this work, the first-principles calculations were performed to study the mechanical properties of the BP/SnSe van der Waals heterostructure. Interestingly, a near-zero Poisson's ratio vzx was found in BP/SnSe heterostructure. In addition, compared to the parent materials BP and SnSe with strong in-plane anisotropic mechanical properties, the BP/SnSe heterostructure shows strongly suppressed anisotropy. Our findings suggest that the vdW heterostructure could show quite different mechanical properties from the parent materials and provide new opportunities for the mechanical applications of the heterostructures. △ Less

Submitted 21 September, 2021; originally announced September 2021.

Giant Polarization and Abnormal Flexural Deformation in Bent Freestanding Perovskite Oxides

Authors: Songhua Cai, Yingzhuo Lun, Dianxiang Ji, Lu Han, Changqing Guo, Yipeng Zang, Si Gao, Yifan Wei, Min Gu, Chunchen Zhang, Zhengbin Gu, Xueyun Wang, Christopher Addiego, Daining Fang, Yuefeng Nie, Jiawang Hong, Peng Wang, Xiaoqing Pan

Abstract: Recent realizations of ultrathin freestanding perovskite oxides offer a unique platform to probe novel properties in two-dimensional oxides. Here, we observed a giant flexoelectric response in freestanding BiFeO3 and SrTiO3 in their bent state arising from strain gradients up to 4x10e7/m, suggesting a promising approach for realizing extremely large polarizations. Additionally, a substantial rever… ▽ More Recent realizations of ultrathin freestanding perovskite oxides offer a unique platform to probe novel properties in two-dimensional oxides. Here, we observed a giant flexoelectric response in freestanding BiFeO3 and SrTiO3 in their bent state arising from strain gradients up to 4x10e7/m, suggesting a promising approach for realizing extremely large polarizations. Additionally, a substantial reversible change in thickness was discovered in bent freestanding BiFeO3, which implies an unusual bending-expansion/shrinkage and thickness-dependence Poisson's ratios in this ferroelectric membrane that has never been seen before in crystalline materials. Our theoretical modeling reveals that this unprecedented flexural deformation within the membrane is attributable to a flexoelectricity-piezoelectricity interplay. The finding unveils intriguing nanoscale electromechanical properties and provides guidance for their practical applications in flexible nanoelectromechanical systems. △ Less

Submitted 7 September, 2020; originally announced September 2020.

Comments: 19 pages, 4 figures

Screening piezoelectricity in determination of flexoelectric coefficient at nanoscale

Authors: Yingzhuo Lun, Hao Zhou, Di Yao, Xueyun Wang, Jiawang Hong

Abstract: Piezoelectricity usually accompanies with flexoelectricity in polar materials which is the linear response of polarization to a strain gradient. Therefore, it is hard to eliminate piezoelectric effect in determination of pure flexoelectric response. In this work, we propose an analytical method to characterize the flexoelectric coefficient quantitatively at nanoscale in piezoelectric materials by… ▽ More Piezoelectricity usually accompanies with flexoelectricity in polar materials which is the linear response of polarization to a strain gradient. Therefore, it is hard to eliminate piezoelectric effect in determination of pure flexoelectric response. In this work, we propose an analytical method to characterize the flexoelectric coefficient quantitatively at nanoscale in piezoelectric materials by screening piezoelectricity. Our results show that the flexoelectricity reduces the nanopillar stiffness while the piezoelectricity enhances it. With careful design of the shape of the nanopillars and measuring their stiffness difference, the flexoelectric coefficient can be obtained with the piezoelectric contribution eliminated completely. This approach avoids the measurement of electrical properties with dynamic load, which helps to reduce the challenge of flexoelectric measurement at nanoscale. Our work will be beneficial to quantitative characterization of flexoelectric properties and design of flexoelectric devices at nanoscale. △ Less

Submitted 27 March, 2020; originally announced March 2020.

Journal ref: Mechanics of Materials 150, 103591 (2020)

Ferroelastic switching with van der Waals direction transformation in layered PdSe2 driven by uniaxial and shear strain

Authors: Peng Lv, Gang Tang, Yanyu Liu, Yingzhuo Lun, Xueyun Wang, Jiawang Hong

Abstract: Uniaxial and biaxial strain approaches are usually implemented to switch the ferroelastic states, which play a key role in the application of the ferroics and shape memory materials. In this work, by using the first-principles calculations, we found not only uniaxial strain, but also shear strain can induce a novel ferroelastic switching, in which the van der Waals (vdW) layered direction rotates… ▽ More Uniaxial and biaxial strain approaches are usually implemented to switch the ferroelastic states, which play a key role in the application of the ferroics and shape memory materials. In this work, by using the first-principles calculations, we found not only uniaxial strain, but also shear strain can induce a novel ferroelastic switching, in which the van der Waals (vdW) layered direction rotates with the ferroelastic transition in layered bulk PdSe2. The shear strain induces ferroelastic switching with three times amplitude smaller than uniaxial strain. The novel three-states ferroelastic switching in layered PdSe2 also occurs under shear strain. Our result shows that the shear strain could be used as an effective approach for manipulating the functionalities of layered materials in potential device applications. △ Less

Submitted 26 February, 2020; originally announced February 2020.

Journal ref: Extreme Mechanics Letters 44, 101231 (2021)

Thickness-dependent in-plane polarization and structural phase transition in van der Waals Ferroelectric CuInP2S6

Authors: Jianming Deng, Yanyu Liu, Mingqiang Li, Sheng Xu, Yingzhuo Lun, Peng Lv, Tianlong Xia, Peng Gao, Xueyun Wang, Jiawang Hong

Abstract: Van der Waals (vdW) layered materials have rather weaker interlayer bonding than the intra-layer bonding, therefore the exfoliation along the stacking direction enables the achievement of monolayer or few layers vdW materials with emerging novel physical properties and functionalities. The ferroelectricity in vdW materials recently attracts renewed interest for the potential use in high-density st… ▽ More Van der Waals (vdW) layered materials have rather weaker interlayer bonding than the intra-layer bonding, therefore the exfoliation along the stacking direction enables the achievement of monolayer or few layers vdW materials with emerging novel physical properties and functionalities. The ferroelectricity in vdW materials recently attracts renewed interest for the potential use in high-density storage devices. As the thickness going thinner, the competition between the surface energy, depolarization field and interfacial chemical bonds may give rise to the modification of ferroelectricity and crystalline structure, which has limited investigations. In this work, combining the piezoresponse force microscope scanning, contact resonance imaging, we report the existence of the intrinsic in-plane polarization in vdW ferroelectrics CuInP2S6 (CIPS) single crystals, whereas below a critical thickness between 90-100 nm, the in-plane polarization disappears. The Young's modulus also shows an abrupt stiffness at the critical thickness. Based on the density functional theory calculations, we ascribe these behaviors to a structural phase transition from monoclinic to trigonal structure, which is further verified by transmission electron microscope technique. Taken together, these findings demonstrate the foundational importance of structural phase transition for enhancing the rich functionality and broad utility of vdW ferroelectrics. △ Less

Submitted 19 November, 2019; originally announced November 2019.

Journal ref: Small 2019, 1904529