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Observation of Floquet-induced gap in graphene
Authors:
Fei Wang,
Xuanxi Cai,
Xiao Tang,
Jinxi Lu,
Wanying Chen,
Tianshuang Sheng,
Runfa Feng,
Haoyuan Zhong,
Hongyun Zhang,
Pu Yu,
Shuyun Zhou
Abstract:
Floquet engineering provides a powerful pathway for creating non-equilibrium phases of matter with tailored electronic structures and properties through time-periodic driving. As the original theoretical prototype, graphene established the framework in which the Floquet topological insulator with light-induced anomalous Hall effect was proposed. However, the defining spectroscopic signature of Flo…
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Floquet engineering provides a powerful pathway for creating non-equilibrium phases of matter with tailored electronic structures and properties through time-periodic driving. As the original theoretical prototype, graphene established the framework in which the Floquet topological insulator with light-induced anomalous Hall effect was proposed. However, the defining spectroscopic signature of Floquet engineering in graphene--light-induced hybridization (avoided-crossing) gap at Floquet band crossings, has remained experimentally elusive. Here, we report direct observation of Floquet-induced hybridization gap in monolayer graphene under resonant driving by a strong light field. Time- and angle-resolved photoemission spectroscopy reveals gap opening at Floquet band crossings, accompanied by coherent Floquet sidebands. The gap exhibits pronounced momentum anisotropy, featuring two Dirac nodes protected by the spatiotemporal symmetry and tunable by light polarization. These results provide long-sought experimental demonstration of Floquet band engineering in graphene, opening up opportunities for light-field engineered quantum phases in graphene and related materials.
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Submitted 30 March, 2026;
originally announced March 2026.
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Robust Floquet-induced gap in irradiated graphite
Authors:
Fei Wang,
Xuanxi Cai,
Wanying Chen,
Jinxi Lu,
Tianshuang Sheng,
Xiao Tang,
Jiansong Li,
Hongyun Zhang,
Shuyun Zhou
Abstract:
Floquet engineering provides an emerging pathway for tailoring the electronic states of quantum materials through time-periodic drive. A critical step along this direction is achieving light-induced modifications of the dynamical electronic structure, such as avoided-crossing gap at the Floquet Brillouin zone boundary, via efficient coupling of electrons with the coherent light-field. Here, we rep…
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Floquet engineering provides an emerging pathway for tailoring the electronic states of quantum materials through time-periodic drive. A critical step along this direction is achieving light-induced modifications of the dynamical electronic structure, such as avoided-crossing gap at the Floquet Brillouin zone boundary, via efficient coupling of electrons with the coherent light-field. Here, we report robust Floquet-induced gap in bulk graphite that persists despite the presence of interlayer coupling and photo-excitation. Using time- and angle-resolved photoemission spectroscopy with intense mid-infrared pumping, we directly reveal Floquet-induced gaps at resonance points both in the valence and conduction bands, accompanied by coherent Floquet sidebands. The gap and sidebands coexist with photo-excited carriers, yet their distinct timescales allow us to disentangle their origins. Our demonstration of robust Floquet-induced gaps establishes graphite as a platform for coherent manipulation of Dirac fermions and realization of light-engineered quantum phases.
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Submitted 30 March, 2026;
originally announced March 2026.
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Floquet engineering enabled by charge density wave transition
Authors:
Fei Wang,
Xuanxi Cai,
Teng Xiao,
Changhua Bao,
Haoyuan Zhong,
Wanying Chen,
Tianyun Lin,
Tianshuang Sheng,
Xiao Tang,
Hongyun Zhang,
Pu Yu,
Zhiyuan Sun,
Shuyun Zhou
Abstract:
Floquet engineering has emerged as a powerful approach for dynamically tailoring the electronic structures of quantum materials through time-periodic light fields generated by ultrafast laser pulses. The light fields can transiently dress Bloch electrons, creating novel electronic states inaccessible in equilibrium. While such temporal modulation provides dynamic control, spatially periodic modula…
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Floquet engineering has emerged as a powerful approach for dynamically tailoring the electronic structures of quantum materials through time-periodic light fields generated by ultrafast laser pulses. The light fields can transiently dress Bloch electrons, creating novel electronic states inaccessible in equilibrium. While such temporal modulation provides dynamic control, spatially periodic modulations, such as those arising from charge density wave (CDW) order, can also dramatically reconstruct the band structure through real-space symmetry breaking. The interplay between these two distinct forms of modulation-temporal and spatial-opens a new frontier in electronic-phase-dependent Floquet engineering. Here we demonstrate this concept experimentally in the prototypical CDW material 1T-TiSe$_2$. Using time- and angle-resolved photoemission spectroscopy (TrARPES) with mid-infrared pumping, we observe a striking pump-induced instantaneous downshift of the valence band maximum (VBM), which is in sharp contrast to the subsequent upward shift on picosecond timescale associated with CDW melting. Most remarkably, the light-induced VBM downshift is observed exclusively in the CDW phase and only when the pump pulse is present, reaching maximum when pumping near resonance with the CDW gap. These observations unequivocally reveal the critical role of CDW in the Floquet engineering of TiSe$_2$. Our work demonstrates how time-periodic drives can synergistically couple to spatially periodic modulations to create non-equilibrium electronic states, establishing a new paradigm for Floquet engineering enabled by spontaneous symmetry breaking.
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Submitted 21 October, 2025;
originally announced October 2025.
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Manipulating the symmetry of photon-dressed electronic states
Authors:
Changhua Bao,
Michael Schüler,
Teng Xiao,
Fei Wang,
Haoyuan Zhong,
Tianyun Lin,
Xuanxi Cai,
Tianshuang Sheng,
Xiao Tang,
Hongyun Zhang,
Pu Yu,
Zhiyuan Sun,
Wenhui Duan,
Shuyun Zhou
Abstract:
Strong light-matter interaction provides opportunities for tailoring the physical properties of quantum materials on the ultrafast timescale by forming photon-dressed electronic states, i.e., Floquet-Bloch states. While the light field can in principle imprint its symmetry properties onto the photon-dressed electronic states, so far, how to experimentally detect and further engineer the symmetry o…
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Strong light-matter interaction provides opportunities for tailoring the physical properties of quantum materials on the ultrafast timescale by forming photon-dressed electronic states, i.e., Floquet-Bloch states. While the light field can in principle imprint its symmetry properties onto the photon-dressed electronic states, so far, how to experimentally detect and further engineer the symmetry of photon-dressed electronic states remains elusive. Here by utilizing time- and angle-resolved photoemission spectroscopy (TrARPES) with polarization-dependent study, we directly visualize the parity symmetry of Floquet-Bloch states in black phosphorus. The photon-dressed sideband exhibits opposite photoemission intensity to the valence band at the $Γ$ point,suggesting a switch of the parity induced by the light field. Moreover, a "hot spot" with strong intensity confined near $Γ$ is observed, indicating a momentum-dependent modulation beyond the parity switch. Combining with theoretical calculations, we reveal the light-induced engineering of the wave function of the Floquet-Bloch states as a result of the hybridization between the conduction and valence bands with opposite parities, and show that the "hot spot" is intrinsically dictated by the symmetry properties of black phosphorus. Our work suggests TrARPES as a direct probe for the parity of the photon-dressed electronic states with energy- and momentum-resolved information, providing an example for engineering the wave function and symmetry of such photon-dressed electronic states via Floquet engineering.
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Submitted 9 December, 2024;
originally announced December 2024.