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Pressure induced electronic band evolution and observation of superconductivity in the Dirac semimetal ZrTe5
Authors:
Sanskar Mishra,
Nagendra Singh,
Vinod K. Gangwar,
Rajan Walia,
Jianping Sun,
Genfu Chen,
Dilip Bhoi,
Sandip Chatterjee,
Yoshiya Uwatoko,
Jinguang Cheng,
Prashant Shahi
Abstract:
We report a comprehensive investigation of the pressure effects on the magnetotransport properties of the topological material ZrTe5 within 1 to 8 GPa pressure range. With increasing pressure, the characteristic peak (Tp) in its electrical resistivity first shifts to higher temperature and then moves quickly towards the lower temperature before disappearing eventually at 6 GPa. Beyond 6 GPa, the s…
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We report a comprehensive investigation of the pressure effects on the magnetotransport properties of the topological material ZrTe5 within 1 to 8 GPa pressure range. With increasing pressure, the characteristic peak (Tp) in its electrical resistivity first shifts to higher temperature and then moves quickly towards the lower temperature before disappearing eventually at 6 GPa. Beyond 6 GPa, the system exhibits metallic behavior across the entire temperature range, and superconductivity emerges below Tc = 1.8 K at 8 GPa. Based on the systematic magnetotransport measurement under pressure, we demonstrate that the superconductivity occurs following a significant electronic structure modulation possibly due to pressure induced structural changes near 6 GPa, which coincides with dramatic enhancement of the magnetoresistance (MR) reaching up to 1400 percent. Our experimental results are substantiated by density functional theory calculations as the application of pressure drastically alters the density of states near the Fermi level. Notably, multiple hole pockets emerge at the Fermi level from 4 GPa onward, and their contributions are further enhanced with increasing pressure. The combined experimental and theoretical investigation reveals a comprehensive evolution of electronic structure of Dirac semimetal ZrTe5 under pressure and suggest a possible link between the Fermi surface reconstruction in the pressure range of structural transition and emergence of superconductivity
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Submitted 9 February, 2026;
originally announced February 2026.
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Effect of pressure on the transport properties and thermoelectric performance of Dirac semimetal ZrTe5
Authors:
Sanskar Mishra,
Nagendra Singh,
V. K. Gangwar,
Rajan Walia,
Manindra Kumar,
Udai Bhan Singh,
Deepash Sekhar Saini,
Jianping Sun,
Genfu Chen,
Dilip Bhoi,
Sandip Chatterjee,
Yoshiya Uwatoko,
Jinguang Cheng,
Prashant Shahi
Abstract:
In this study, we have investigated and compared the effect of hydrostatic pressure up to ~20 kbar on the transport properties of ZrTe5 single crystals grown by chemical vapor transport (CVT) and flux methods. With the application of pressure, the electrical resistivity Rho(T) and thermopower S(T) of both crystals were found to increase in the whole temperature range unlike the other known thermoe…
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In this study, we have investigated and compared the effect of hydrostatic pressure up to ~20 kbar on the transport properties of ZrTe5 single crystals grown by chemical vapor transport (CVT) and flux methods. With the application of pressure, the electrical resistivity Rho(T) and thermopower S(T) of both crystals were found to increase in the whole temperature range unlike the other known thermoelectric materials, such as Bi2Te3, SnSe etc. This observation is supported by the complementary first-principles band structure calculation as the application of pressure widens the direct bandgap at Γ point. Moreover, the analysis of the pressure dependent magneto-transport and Shubnikov de-Hass oscillation results revealed an increase in carrier concentration and effective mass along with the reduction of mobility as pressure rises. Furthermore, with the application of pressure, the flux-grown ZrTe5 crystals display a transition from unipolar to bipolar charge transport as evidenced by the emergence of resistivity peak at T* under high pressure, unlike the CVT-grown ZrTe5 crystals where the bipolar charge transport near its characteristic resistivity peak (Tp) remains unaffected.
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Submitted 23 April, 2025;
originally announced April 2025.
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Effect of antisite disorder on the magnetic and transport properties of a quaternary Heusler alloy
Authors:
Srishti Dixit,
Swayangsiddha Ghosh,
Sanskar Mishra,
Nisha Shahi,
Prashant Shahi,
Sanjay Singh,
A. K. Bera,
S. M. Yusuf,
Yoshiya Uwatoko,
C. -F. Chang,
Sandip Chatterjee
Abstract:
Spin gapless semiconductors based Heusler alloys are the special class of materials due to their unique band structure, high spin polarization and high Curie temperature. These materials exhibit a distinct electronic structure: a nonzero band gap in one spin channel while the other spin channel remains gapless, making them highly suitable for tunable spintronics. In this study, a comprehensive ana…
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Spin gapless semiconductors based Heusler alloys are the special class of materials due to their unique band structure, high spin polarization and high Curie temperature. These materials exhibit a distinct electronic structure: a nonzero band gap in one spin channel while the other spin channel remains gapless, making them highly suitable for tunable spintronics. In this study, a comprehensive analysis of structural, magnetic, thermoelectric, and transport properties of the quaternary Heusler alloy CoFeMnSn is conducted. X-ray diffraction and Neutron diffraction analyses confirm a well ordered structure with partial antisite disorder between Co, Fe and Mn, Sn atoms. Magnetic studies show that the material exhibits room-temperature ferromagnetism, with a Curie temperature of around 660 K. Notably, we observe an anomalous Hall effect linked to intrinsic mechanisms driven by Berry curvature, underscoring the intricate relationship between structural disorder and electronic behavior. Transport measurements also highlight the impact of antisite disorder on the systems, with resistivity decreasing as temperature increases. These insights position CoFeMnSn as a promising material for future spintronic devices and advanced technological applications.
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Submitted 1 November, 2024; v1 submitted 27 October, 2024;
originally announced October 2024.
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Bilayer crystals of trapped ions for quantum information processing
Authors:
Samarth Hawaldar,
Prakriti Shahi,
Allison L. Carter,
Ana Maria Rey,
John J. Bollinger,
Athreya Shankar
Abstract:
Trapped ion systems are a leading platform for quantum information processing, but they are currently limited to 1D and 2D arrays, which imposes restrictions on both their scalability and their range of applications. Here, we propose a path to overcome this limitation by demonstrating that Penning traps can be used to realize remarkably clean bilayer crystals, wherein hundreds of ions self-organiz…
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Trapped ion systems are a leading platform for quantum information processing, but they are currently limited to 1D and 2D arrays, which imposes restrictions on both their scalability and their range of applications. Here, we propose a path to overcome this limitation by demonstrating that Penning traps can be used to realize remarkably clean bilayer crystals, wherein hundreds of ions self-organize into two well-defined layers. These bilayer crystals are made possible by the inclusion of an anharmonic trapping potential, which is readily implementable with current technology. We study the normal modes of this system and discover salient differences compared to the modes of single-plane crystals. The bilayer geometry and the unique properties of the normal modes open new opportunities, in particular in quantum sensing and quantum simulation, that are not straightforward in single-plane crystals. Furthermore, we illustrate that it may be possible to extend the ideas presented here to realize multilayer crystals with more than two layers. Our work increases the dimensionality of trapped ion systems by efficiently utilizing all three spatial dimensions and lays the foundation for a new generation of quantum information processing experiments with multilayer 3D crystals of trapped ions.
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Submitted 9 January, 2024; v1 submitted 17 December, 2023;
originally announced December 2023.
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Pressure induced Superconductivity and location of Fermi energy at Dirac point in BiSbTe3
Authors:
Vinod K. Gangwar,
Shiv Kumar,
Mahima Singh,
Labanya Ghosh,
Zhang Yufeng,
Prashant Shahi,
Swapnil Patil,
Eike F. Schwier,
Kenya Shimada,
Yoshiya Uwatoko,
Sandip Chatterjee
Abstract:
We have grown single-crystal BiSbTe3 3D TI sample and studied structural, TE as well as pressure dependent magneto-transport properties. Large positive Seebeck coefficient confirmed the p-type nature of BiSbTe3, which is consistent with Hall measurement. We have also studied the electronic band structure using Laser-based ARPES, which revealed the existence of a Dirac-cone like metallic surface st…
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We have grown single-crystal BiSbTe3 3D TI sample and studied structural, TE as well as pressure dependent magneto-transport properties. Large positive Seebeck coefficient confirmed the p-type nature of BiSbTe3, which is consistent with Hall measurement. We have also studied the electronic band structure using Laser-based ARPES, which revealed the existence of a Dirac-cone like metallic surface state in BiSbTe3 with a Dirac Point situated exactly at the Fermi level. Additionally, superconductivity emerges under pressure of 8 GPa with a critical temperature of ~2.5 K. With further increase of pressure, the superconducting transition temperature (Tc) increases and at 14 GPa it shows the maximum Tc (~3.3 K).
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Submitted 25 June, 2019;
originally announced June 2019.
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Anomalous and Topological Hall effect in Cu doped Sb2Te3 Topological Insulator
Authors:
Abhishek Singh,
Vinod K Gangwar,
Prashant Shahi,
Debarati Pal,
Rahul Singh,
A. K. Ghosh,
Swapnil Patil,
Jinguang Cheng,
Sandip Chatterjee
Abstract:
The magneto-transport and magnetization measurements of Sb1.90Cu0.10Te3 were performed at different temperatures and different fields. Magneto-transport measurement at high field indicates the coexistence of both bulk and surface states. The magnetization shows the induced antiferromagnetic ordering with Cu doping and the observed quantum oscillation in it indicates that magnetization in Sb1.90Cu0…
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The magneto-transport and magnetization measurements of Sb1.90Cu0.10Te3 were performed at different temperatures and different fields. Magneto-transport measurement at high field indicates the coexistence of both bulk and surface states. The magnetization shows the induced antiferromagnetic ordering with Cu doping and the observed quantum oscillation in it indicates that magnetization in Sb1.90Cu0.10Te3 is the bulk property. The non linearity in Hall data suggests the existence of anomalous and topological Hall effect. The anomalous and topological Hall effect (THE) from measured hall data of Cu doped Sb2Te3 topological insulator have been evaluated.
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Submitted 15 September, 2018;
originally announced September 2018.
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High-Tc superconductivity up to 55 K under high pressure in the heavily electron doped Lix(NH3)yFe2Se2 single crystal
Authors:
P. Shahi,
J. P. Sun,
S. S. Sun,
Y. Y. Jiao,
K. Y. Chen,
S. H. Wang,
H. C. Lei,
Y. Uwatoko,
B. S. Wang,
J. -G. Cheng
Abstract:
We report a high-pressure study on the heavily electron doped Lix(NH3)yFe2Se2 single crystal by using the cubic anvil cell apparatus. The superconducting transition temperature Tc = 44 K at ambient pressure is first suppressed to below 20 K upon increasing pressure to Pc = 2 GPa, above which the pressure dependence of Tc(P) reverses and Tc increases steadily to ca. 55 K at 11 GPa. These results th…
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We report a high-pressure study on the heavily electron doped Lix(NH3)yFe2Se2 single crystal by using the cubic anvil cell apparatus. The superconducting transition temperature Tc = 44 K at ambient pressure is first suppressed to below 20 K upon increasing pressure to Pc = 2 GPa, above which the pressure dependence of Tc(P) reverses and Tc increases steadily to ca. 55 K at 11 GPa. These results thus evidenced a pressure-induced second high-Tc superconducting (SC-II) phase in Lix(NH3)yFe2Se2 with the highest Tcmax = 55K among the FeSe-based bulk materials. Hall data confirm that in the emergent SC-II phase the dominant electron-type carrier density undergoes a fourfold enhancement and tracks the same trend as Tc(P). Interesting, we find a nearly parallel scaling behavior between Tc and the inverse Hall coefficient for the SC-II phases of both Lix(NH3)yFe2Se2 and (Li,Fe)OHFeSe. The present work demonstrates that high pressure offers a distinctive means to further raising the maximum Tc of heavily electron doped FeSe-based materials by increasing the effective charge carrier concentration via a plausible Fermi surface reconstruction at Pc.
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Submitted 25 September, 2017;
originally announced September 2017.
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Reemergence of high-Tc superconductivity in the (Li1-xFex)OHFe1-ySe under high pressure
Authors:
J. P. Sun,
P. Shahi,
H. X. Zhou,
Y. L. Huang,
K. Y. Chen,
B. S. Wang,
S. L. Ni,
N. N. Li,
K. Zhang,
W. G. Yang,
Y. Uwatoko,
K. Jin,
F. Zhou,
D. J. Singh,
X. L. Dong,
Z. X. Zhao,
J. -G. Cheng
Abstract:
The pressure-induced reemergence of the second high-Tc superconducting phase (SC-II) in the alkali-metal intercalated AxFe2-ySe2 (A = K, Rb, Cs, Tl) remains an enigma and proper characterizations on the superconducting- and normal-state properties of the SC-II phase were hampered by the intrinsic inhomogeneity and phase separation. To elucidate this intriguing problem, we performed a detailed high…
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The pressure-induced reemergence of the second high-Tc superconducting phase (SC-II) in the alkali-metal intercalated AxFe2-ySe2 (A = K, Rb, Cs, Tl) remains an enigma and proper characterizations on the superconducting- and normal-state properties of the SC-II phase were hampered by the intrinsic inhomogeneity and phase separation. To elucidate this intriguing problem, we performed a detailed high-pressure magnetotransport study on the recently discovered (Li1-xFex)OHFe1-ySe single crystals, which have high Tc~40 K and share similar Fermi surface topology as AxFe2-ySe2, but are free from the sample complications. We found that the ambient-pressure Tc~41 K is suppressed gradually to below 2 K upon increasing pressure to Pc ~5 GPa, above which a SC-II phase with higher Tc emerges and the Tc increases progressively to above 50 K up to 12.5 GPa. Interestingly, our high-precision resistivity data enable us to uncover the sharp transition of the normal state from a Fermi liquid for SC-I phase (0 < P < 5 GPa) to a non-Fermi-liquid for SC-II phase (P > 5GPa). In addition, the reemergence of high-Tc SC-II phase is found to accompany with a concurrent enhancement of electron carrier density. Since high-pressure structural study based on the synchrotron X-ray diffraction rules out the structural transition below 10 GPa, the observed SC-II phase with enhanced carrier density should be ascribed to an electronic origin associated with a pressure-induced Fermi surface reconstruction.
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Submitted 20 July, 2017;
originally announced July 2017.
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High-Tc superconductivity in FeSe at high pressure: Dominant hole carriers and enhanced spin fluctuations
Authors:
J. P. Sun,
G. Z. Ye,
P. Shahi,
J. -Q. Yan,
K. Matsuura,
H. Kontani,
G. M. Zhang,
Q. Zhou,
B. C. Sales,
T. Shibauchi,
Y. Uwatoko,
D. J. Singh,
J. -G. Cheng
Abstract:
The importance of electron-hole interband interactions is widely acknowledged for iron-pnictide superconductors with high transition temperatures (Tc). However, high-Tc superconductivity without hole carriers has been suggested in FeSe single-layer films and intercalated iron-selenides, raising a fundamental question whether iron pnictides and chalcogenides have different pairing mechanisms. Here,…
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The importance of electron-hole interband interactions is widely acknowledged for iron-pnictide superconductors with high transition temperatures (Tc). However, high-Tc superconductivity without hole carriers has been suggested in FeSe single-layer films and intercalated iron-selenides, raising a fundamental question whether iron pnictides and chalcogenides have different pairing mechanisms. Here, we study the properties of electronic structure in the high-Tc phase induced by pressure in bulk FeSe from magneto-transport measurements and first-principles calculations. With increasing pressure, the low-Tc superconducting phase transforms into high-Tc phase, where we find the normal-state Hall resistivity changes sign from negative to positive, demonstrating dominant hole carriers in striking contrast to other FeSe-derived high-Tc systems. Moreover, the Hall coefficient is remarkably enlarged and the magnetoresistance exhibits anomalous scaling behaviors, evidencing strongly enhanced interband spin fluctuations in the high-Tc phase. These results in FeSe highlight similarities with high-Tc phases of iron pnictides, constituting a step toward a unified understanding of iron-based superconductivity.
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Submitted 23 November, 2016;
originally announced November 2016.
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Bipolar Conduction is the Origin of the Electronic Transition in Pentatellurides: Metallic vs. Semiconducting Behavior
Authors:
P. Shahi,
D. J. Singh,
J. P. Sun,
L. X. Zhao,
G. F. Chen,
J. -Q. Yan,
D. G. Mandrus,
J. -G. Cheng
Abstract:
The pentatellurides, ZrTe5 and HfTe5 are layered compounds with one dimensional transition-metal chains that show a never understood temperature dependent transition in transport properties as well as recently discovered properties suggesting topological semimetallic behavior. Here we show that these materials are semiconductors and that the electronic transition is due to a combination of bipolar…
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The pentatellurides, ZrTe5 and HfTe5 are layered compounds with one dimensional transition-metal chains that show a never understood temperature dependent transition in transport properties as well as recently discovered properties suggesting topological semimetallic behavior. Here we show that these materials are semiconductors and that the electronic transition is due to a combination of bipolar effects and different anisotropies for electrons and holes. We report magneto-transport properties for two kinds of ZrTe5 single crystals grown with the chemical vapor transport (S1) and the flux method (S2), respectively. These have distinct transport properties at zero field: the S1 displays a metallic behavior with a pronounced resistance peak and a sudden sign reversal in thermopower at approximately 130 K, consistent with previous observations of the electronic transition; in strikingly contrast, the S2 exhibits a semiconducting-like behavior at low temperatures and a positive thermopower over the whole temperature range. Refinements on the single-crystal X-ray diffraction and the energy dispersive spectroscopy analysis revealed the presence of noticeable Te-vacancies in the sample S1, confirming that the widely observed anomalous transport behaviors in pentatellurides actually take place in the Te-deficient samples. Electronic structure calculations show narrow gap semiconducting behavior, with different transport anisotropies for holes and electrons. For the degenerately doped n-type samples, our transport calculations can result in a resistivity peak and crossover in thermopower from negative to positive at temperatures close to that observed experimentally. Our present work resolves the longstanding puzzle regarding the anomalous transport behaviors of pentatellurides, and also resolves the electronic structure in favor of a semiconducting state.
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Submitted 19 November, 2016;
originally announced November 2016.
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Local structure surrounding V sites in Co doped ZnV2O4
Authors:
P. Shahi,
N. Tiwari,
D. Bhattacharyya,
S. N. Jha,
A. K. Ghosh,
A. Banerjee,
H. Singh,
A. K. Sinha,
Sandip Chatterjee
Abstract:
Co doped ZnV2O4 has been investigated by Synchrotron X-ray diffraction, Magnetization measurement and Extended X-ray absorption fine structure (EXAFS) analysis. With Co doping in the Zn site the system moves towards the itinerant electron limit. From Synchrotron and magnetization measurement it is observed that there is an effect in bond lengths and lattice parameters around the magnetic transitio…
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Co doped ZnV2O4 has been investigated by Synchrotron X-ray diffraction, Magnetization measurement and Extended X-ray absorption fine structure (EXAFS) analysis. With Co doping in the Zn site the system moves towards the itinerant electron limit. From Synchrotron and magnetization measurement it is observed that there is an effect in bond lengths and lattice parameters around the magnetic transition temperature. The EXAFS study indicates that Co ion exists in the High spin state in Co doped ZnV2O4.
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Submitted 6 April, 2015;
originally announced April 2015.
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Effect of dilution of both A- and B- sites on the multiferroic properties of spinal Mott insulators
Authors:
Prashant Shahi,
R. Singh,
Shiv Kumar,
A. Tiwari,
A. Tripathi,
J. Saha,
S. Patnaik,
A. K. Ghosh,
Sandip Chatterjee
Abstract:
The structural, magnetic, electrical and transport properties of FeV2O4, by doping Li and Cr ions respectively in A and B sites, have been studied. Dilution of A-site by Li doping increases the ferri-magnetic ordering temperature and decreases the ferroelectric transition temperature. This also decreases the V-V distances which in effect increases the A-V coupling. This increased A-V coupling domi…
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The structural, magnetic, electrical and transport properties of FeV2O4, by doping Li and Cr ions respectively in A and B sites, have been studied. Dilution of A-site by Li doping increases the ferri-magnetic ordering temperature and decreases the ferroelectric transition temperature. This also decreases the V-V distances which in effect increases the A-V coupling. This increased A-V coupling dominates over the decrease in A-V coupling due to doping of non-magnetic Li. On the other hand, Cr doping increases the ferri-magnetic ordering temperature but does not alter the ferroelectric transition temperature which is due to the fact that the polarization origin to the presence of almost non-substituted regions.
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Submitted 13 December, 2014;
originally announced December 2014.
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Effect of Li doping on magnetic and transport properties of CoV2O4 and FeV2O4
Authors:
Prashant Shahi,
R. Singh,
Shiv Kumar,
D. K. Dubey,
D. N. Singh,
A. Tiwari,
A. Tripathi,
A. K. Ghosh,
Sandip Chatterjee
Abstract:
The structural, magnetic and transport properties have been studied of Li doped CoV2O4 and FeV2O4. Li doping increases the ferri-magnetic ordering temperature of both the samples but decreases the spin-glass transition temperature of CoV2O4. The Li-doping decreases the V-V distance which in effect increases the A-V coupling. Thus the increased A-V coupling dominate over the decrease in A-V couplin…
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The structural, magnetic and transport properties have been studied of Li doped CoV2O4 and FeV2O4. Li doping increases the ferri-magnetic ordering temperature of both the samples but decreases the spin-glass transition temperature of CoV2O4. The Li-doping decreases the V-V distance which in effect increases the A-V coupling. Thus the increased A-V coupling dominate over the decrease in A-V coupling due to doping of non-magnetic Li.
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Submitted 10 November, 2014;
originally announced November 2014.
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Chemical Pressure effect at the boundary of Mott insulator and itinerant electron limit of Spinel Vanadates
Authors:
P. Shahi,
A. Kumar,
Rahul Singh,
Ripandeep Singh,
P. U. Sastry,
A. Das,
Amish G. Joshi,
A. K. Ghosh,
A. Banerjee,
Sandip Chatterjee
Abstract:
The chemical pressure effect on the structural, transport, magnetic and electronic properties (by measuring X-ray photoemission spectroscopy) of ZnV2O4 has been investigated by doping Mn and Co on the Zinc site of ZnV2O4. With Mn doping the V-V distance increases and with Co doping it decreases. The resistivity and thermoelectric power data indicate that as the V-V distance decreases the system mo…
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The chemical pressure effect on the structural, transport, magnetic and electronic properties (by measuring X-ray photoemission spectroscopy) of ZnV2O4 has been investigated by doping Mn and Co on the Zinc site of ZnV2O4. With Mn doping the V-V distance increases and with Co doping it decreases. The resistivity and thermoelectric power data indicate that as the V-V distance decreases the system moves towards Quantum Phase Transition. The transport data also indicate that the conduction is due to the small polaron hopping. The chemical pressure shows the non-monotonous behaviour of charge gap and activation energy. The XPS study also supports the observation that with decrease of the V-V separation the system moves towards Quantum Phase Transition. On the other hand when Ti is doped on the V-site of ZnV2O4 the metal-metal distance decreases and at the same time the TN also increases.
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Submitted 30 August, 2014;
originally announced September 2014.
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Effect of Zn doping on the Magneto-Caloric effect and Critical Constants of Mott Insulator MnV2O4
Authors:
Prashant Shahi,
Harishchandra Singh,
A. Kumar,
K. K. Shukla,
A. K. Ghosh,
A. K. Yadav,
A. K. Nigam,
Sandip Chatterjee
Abstract:
X-ray absorption near edge spectra (XANES) and magnetization of Zn doped MnV2O4 have been measured and from the magnetic measurement the critical exponents and magnetocaloric effect have been estimated. The XANES study indicates that Zn doping does not change the valence states in Mn and V. It has been shown that the obtained values of critical exponents \b{eta}, γ and δ do not belong to universal…
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X-ray absorption near edge spectra (XANES) and magnetization of Zn doped MnV2O4 have been measured and from the magnetic measurement the critical exponents and magnetocaloric effect have been estimated. The XANES study indicates that Zn doping does not change the valence states in Mn and V. It has been shown that the obtained values of critical exponents \b{eta}, γ and δ do not belong to universal class and the values are in between the 3D Heisenberg model and the mean field interaction model. The magnetization data follow the scaling equation and collapse into two branches indicating that the calculated critical exponents and critical temperature are unambiguous and intrinsic to the system. All the samples show large magneto-caloric effect. The second peak in magneto-caloric curve of Mn0.95Zn0.05V2O4 is due to the strong coupling between orbital and spin degrees of freedom. But 10% Zn doping reduces the residual spins on the V-V pairs resulting the decrease of coupling between orbital and spin degrees of freedom.
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Submitted 28 August, 2014;
originally announced August 2014.
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Magnetic and Structural properties of $MnV_{2}O_{4}$
Authors:
Prashant Shahi,
Saurabh Kumar,
Neetika Sharma,
Ripandeep Singh,
P. U. M. Sastry,
A. Das,
A. Kumar,
K. K. Shukla,
A. K. Ghosh,
A. K. Nigam,
Sandip Chatterjee
Abstract:
Magnetization, neutron diffraction and X-ray diffraction of Zn doped MnV2O4 as a function of temperature have been measured and the critical exponents and magnetocaloric effect of this system have been estimated. It is observed, that with increase in Zn substitution the noncollinear orientation of Mn spins with the V spins decreases which effectively leads to the decrease of structural transition…
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Magnetization, neutron diffraction and X-ray diffraction of Zn doped MnV2O4 as a function of temperature have been measured and the critical exponents and magnetocaloric effect of this system have been estimated. It is observed, that with increase in Zn substitution the noncollinear orientation of Mn spins with the V spins decreases which effectively leads to the decrease of structural transition temperature more rapidly than Curie temperature. It has been shown that the obtained values of β, γ and δ from different methods match very well. These values do not belong to universal class and the values are in between the 3D Heisenberg model and mean field interaction model. The magnetization data follow the scaling equation and collapse into two branches indicating that the calculated critical exponents and critical temperature are unambiguous and intrinsic to the system. The observed double peaks in magneto-caloric curve of Mn0.95Zn0.05V2O4 is due to the strong distortion of VO6 octahedra.
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Submitted 16 November, 2013;
originally announced November 2013.