Showing 1–50 of 69 results for author: Uchida, M

Observation of in-plane anomalous Nernst effect

Authors: Tadashi Yoneda, Shinichi Nishihaya, Markus Kriener, Haruto Kaminakamura, Ming-Chun Jiang, Naohiro Tezuka, Yoshiya Murakami, Ryotaro Arita, Hiroaki Ishizuka, Masaki Uchida

Abstract: The Nernst effect, which enables the conversion of a heat current into a transverse voltage under magnetic field or spin magnetization, holds significant promise for energy harvesting and thermal management in future electronics. However, the conventional Nernst effect is fundamentally constrained by the orthogonality requirement that the applied field or spontaneous magnetization must be perpendi… ▽ More The Nernst effect, which enables the conversion of a heat current into a transverse voltage under magnetic field or spin magnetization, holds significant promise for energy harvesting and thermal management in future electronics. However, the conventional Nernst effect is fundamentally constrained by the orthogonality requirement that the applied field or spontaneous magnetization must be perpendicular to the plane defined by the temperature gradient and the induced voltage. Here we report that symmetry-tailored ultrathin films of a prototypical ferromagnetic oxide exhibit anomalous Nernst effect arising from intrinsic coupling to spontaneous in-plane spin magnetization. Systematic magnetothermoelectric measurements under spherical rotations of the magnetic field reveal that a pronounced Nernst signal, comparable in magnitude to the out-of-plane response, emerges robustly associated with out-of-plane orbital magnetization. Our findings demonstrate that the anomalous Nernst effect is no longer limited by the orthogonality condition, opening new opportunities for more flexible designs of magnetothermoelectric materials and devices. △ Less

Submitted 14 August, 2026; originally announced August 2026.

Comments: 27 pages, 5 figures

Magnetic structure of EuZn$_2$Sb$_2$ single-crystal thin-film

Authors: Yu Wei Soh, Hsiang Lee, Eugen Weschke, Shinichi Nishihaya, Mikhael T. Sayat, Masaki Uchida, Jian-Rui Soh

Abstract: Magnetic topological materials are a class of compounds which can host massless electrons controlled by the magnetic order. One such compound is EuZn$_2$Sb$_2$, which has recently garnered interest due to its strong interplay between the Eu magnetism and charge carriers. However the topology of the electronic band structure, which depends on the ground state magnetic configuration of the europium… ▽ More Magnetic topological materials are a class of compounds which can host massless electrons controlled by the magnetic order. One such compound is EuZn$_2$Sb$_2$, which has recently garnered interest due to its strong interplay between the Eu magnetism and charge carriers. However the topology of the electronic band structure, which depends on the ground state magnetic configuration of the europium sublattice, has not been determined. Based on our \textit{ab-initio} calculations, we find that an in-plane and out-of-plane \textit{A}-type antiferromagnetic (AFM) order generates a topological crystalline insulator and Dirac semimetal respectively, whereas a ferromagnetic (FM) order stabilizes a Weyl semimetal. Our resonant x-ray elastic scattering measurements of single-crystal thin film EuZn$_2$Sb$_2$ reveal both a sharp magnetic peak at $\textit{\textbf{Q}}$=$(0,0,\frac{1}{2})$ and broad $\textit{\textbf{Q}}$=$(0,0,1)$ below $T_{\mathrm{N}}=12.9$\,K, which is associated with an \textit{A}-type AFM and FM order, respectively. Our measurements indicate that the FM and AFM layers are spatially separated along the crystal $c$ axis, with the former limited to the top three atomic layers. We propose that EuZn$_2$Sb$_2$ behaves as a Weyl semimetal in the surface FM layers, and as a topological crystalline insulator in the lower AFM layers. △ Less

Submitted 26 January, 2026; v1 submitted 22 January, 2026; originally announced January 2026.

Comments: Accepted in PRB

Journal ref: Phys. Rev. B 113, 054425 (2025)

Structural origin of resonant diffraction in RuO$_2$

Authors: Connor A Occhialini, Christie Nelson, Alessandro Bombardi, Shiyu Fan, Raul Acevedo-Esteves, Riccardo Comin, Dmitri N Basov, Maki Musashi, Masashi Kawasaki, Masaki Uchida, Hoydoo You, John Mitchell, Valentina Bisogni, Claudio Mazzoli, Jonathan Pelliciari

Abstract: We report Ru L$_3$-edge resonant X-ray diffraction studies on single crystal and (001) epitaxial films of RuO$_2$. We investigate the distinct $\mathbf{Q} = (100)$ and $(001)$ reflections as a function of incident energy, azimuthal angle, and temperature. The results show that the observed resonant diffraction in RuO$_2$ is fully consistent with a resonant charge anisotropy signal of structural or… ▽ More We report Ru L$_3$-edge resonant X-ray diffraction studies on single crystal and (001) epitaxial films of RuO$_2$. We investigate the distinct $\mathbf{Q} = (100)$ and $(001)$ reflections as a function of incident energy, azimuthal angle, and temperature. The results show that the observed resonant diffraction in RuO$_2$ is fully consistent with a resonant charge anisotropy signal of structural origin permitted by the parent (non-magnetic) rutile $P4_2/mnm$ space group. These results significantly constrain the magnetic contribution to the resonant diffraction signal and indicate the unlikely existence of $\mathbf{k} = 0$ antiferromagnetic order in RuO$_2$. △ Less

Submitted 15 October, 2025; originally announced October 2025.

Magneto-cubic and magneto-linear dependence observed in an in-plane anomalous Hall magnet

Authors: Ayano Nakamura, Shinichi Nishihaya, Mitsuru Akaki, Motoi Kimata, Kenta Sudo, Yuki Deguchi, Hsiang Lee, Tadashi Yoneda, Masaki Kondo, Hiroaki Ishizuka, Masashi Tokunaga, Masaki Uchida

Abstract: The Hall effect, particularly that arising from in-plane magnetic field, has recently emerged as a sensitive probe of quantum geometric properties in solids. Especially in trigonal systems, in-plane anomalous Hall effect (AHE) can be explicitly induced by nontrivial off-diagonal coupling between the magnetic field and the Hall vector on the principal plane. Here we elucidate multipolar dependence… ▽ More The Hall effect, particularly that arising from in-plane magnetic field, has recently emerged as a sensitive probe of quantum geometric properties in solids. Especially in trigonal systems, in-plane anomalous Hall effect (AHE) can be explicitly induced by nontrivial off-diagonal coupling between the magnetic field and the Hall vector on the principal plane. Here we elucidate multipolar dependence of the off-diagonal coupling in the in-plane AHE, by systematically measuring on the (001) principal plane of trigonal antiferromagnet EuCd2Sb2 thin films for each magnetic phase. Around zero field, magneto-cubic dependence of anomalous Hall resistivity is clearly observed not only in the paramagnetic phase but also even in the antiferromagnetic phase. An off-diagonal component of the octupolar tensor also exhibits unconventional decay above the magnetic ordering temperature, roughly depending on the inverse temperature to the third power. In the forced ferromagnetic phase, on the other hand, magneto-linear dependence dominantly appears and notably persists up to very high fields. Our findings clarify key aspects of the off-diagonal coupling in the in-plane AHE, paving the way for its future investigations and potential applications beyond conventional expectations about the Hall effect. △ Less

Submitted 28 July, 2025; originally announced July 2025.

Comments: 16 pages, 4 figures

Journal ref: Physical Review B 11, L051112 (2026)

Stark difference in the in-plane anomalous Hall response in Zintl compounds EuA2Sb2 (A = Zn, Cd) thin films

Authors: Hsiang Lee, Shinichi Nishihaya, Markus Kriener, Jun Fujioka, Ayano Nakamura, Yuto Watanabe, Hiroaki Ishizuka, Masaki Uchida

Abstract: Recent observation of the in-plane anomalous Hall effect in magnetic Weyl semimetal EuCd2Sb2 has drawn attention to out-of-plane orbital magnetization induced by an in-plane field component. Here we study EuZn2Sb2, a sister compound of EuCd2Sb2, to demonstrate sensitive changes of the in-plane anomalous Hall effect on the band modulation. The Hall resistivity measured with rotating the magnetic fi… ▽ More Recent observation of the in-plane anomalous Hall effect in magnetic Weyl semimetal EuCd2Sb2 has drawn attention to out-of-plane orbital magnetization induced by an in-plane field component. Here we study EuZn2Sb2, a sister compound of EuCd2Sb2, to demonstrate sensitive changes of the in-plane anomalous Hall effect on the band modulation. The Hall resistivity measured with rotating the magnetic field within the (001) principal plane of EuZn2Sb2 films exhibits a clear three-fold component corresponding to the in-plane anomalous Hall effect, which is distinct from the two-fold component of the planar Hall effect. The in-plane anomalous Hall effect of EuZn2Sb2 is highly contrasting to EuCd2Sb2, especially in terms of its opposite sign and field dependence, which can be explained by model calculations with different band inversion parameters. Our results pave the way for systematically controlling the in-plane anomalous Hall effect and orbital magnetization through elaborate band engineering. △ Less

Submitted 14 March, 2025; originally announced March 2025.

Comments: 13 pages, 4 figures

Journal ref: Physical Review B 111, L241106 (2025)

Anomalous Hall effect in Dirac semimetal probed by in-plane magnetic field

Authors: Shinichi Nishihaya, Hiroaki Ishizuka, Yuki Deguchi, Ayano Nakamura, Tadashi Yoneda, Hsiang Lee, Markus Kriener, Masaki Uchida

Abstract: Intrinsic anomalous Hall effect (AHE) formulated by geometric properties of Bloch wavefunctions is a ubiquitous transport phenomenon not limited to magnetic systems but also allowed in non-magnetic ones under an external field breaking time-reversal symmetry. On the other hand, detection of field-induced AHE is practically challenging because the band modulation through the Zeeman and spin-orbit c… ▽ More Intrinsic anomalous Hall effect (AHE) formulated by geometric properties of Bloch wavefunctions is a ubiquitous transport phenomenon not limited to magnetic systems but also allowed in non-magnetic ones under an external field breaking time-reversal symmetry. On the other hand, detection of field-induced AHE is practically challenging because the band modulation through the Zeeman and spin-orbit couplings is typically small compared to other contributions as induced by the Lorentz force. Here, we demonstrate on Dirac semimetal Cd$_3$As$_2$ films that the field-induced AHE in non-magnetic systems can be quantitatively probed by applying and rotating the magnetic field within the Hall deflection plane. Measurements on the Cd$_3$As$_2$ (112) plane reveal that AHE emerges as a clear three-fold symmetric component for the in-plane field rotation. This intrinsic response becomes more pronounced in ultralow-electron-density films where significant variations in the geometric properties are expected under the magnetic field. Our findings open new opportunities in the research of Hall responses manifested as orbital magnetization in non-magnetic systems. △ Less

Submitted 6 March, 2025; originally announced March 2025.

Comments: 16 pages, 4 figures

Journal ref: Physical Review Letters 135, 106603 (2025)

Spontaneous in-plane anomalous Hall response observed in a ferromagnetic oxide

Authors: Shinichi Nishihaya, Yuta Matsuki, Haruto Kaminakamura, Yoshiya Murakami, Hiroaki Ishizuka, Masaki Uchida

Abstract: Recent observation of anomalous Hall effect (AHE) induced by magnetic field or spin magnetization lying in the Hall deflection plane has sparked interest in diverse mechanisms for inducing the Hall vector component perpendicular to the applied magnetic field. Such off-diagonal coupling, which is strictly constrained by symmetry of the system, provides new degrees of freedom for engineering Hall re… ▽ More Recent observation of anomalous Hall effect (AHE) induced by magnetic field or spin magnetization lying in the Hall deflection plane has sparked interest in diverse mechanisms for inducing the Hall vector component perpendicular to the applied magnetic field. Such off-diagonal coupling, which is strictly constrained by symmetry of the system, provides new degrees of freedom for engineering Hall responses. However, spontaneous response as extensively studied for out-of-plane AHE remains unexplored. Here we elucidate in-plane AHE in a typical ferromagnetic oxide SrRuO$_3$. The (111)-orientated ultrathin films with in-plane easy axes of spin magnetization exhibit spontaneous AHE at zero field, which is intrinsically coupled to the in-plane spin magnetization and controllable via its direction. Systematic measurements by varying azimuthal and polar field angles further reveal complex Hall responses shaped by higher-order terms allowed by trigonal distortion of the films. Our findings highlight versatile and controllable in-plane Hall responses with out-of-plane orbital ferromagnetism. △ Less

Submitted 14 February, 2025; originally announced February 2025.

Comments: 16 pages, 4 figures

Journal ref: Advanced Materials 37, e02624 (2025)

Distinct topological Hall responses in CeCu$_2$-type EuZn$_2$ and EuCd$_2$ films

Authors: Yuto Watanabe, Shinichi Nishihaya, Markus Kriener, Ayano Nakamura, Masaki Uchida

Abstract: Rare earth intermetallic compounds crystallized in AlB$_2$-type and its low-symmetry derivative CeCu$_2$-type structures potentially host diverse frustrated magnetic structures and rich magnetotransport phenomena. We report the film growth of CeCu$_2$-type EuZn$_2$ by molecular beam epitaxy and the observation of topological Hall responses highly contrastive to isostructural EuCd$_2$. While their… ▽ More Rare earth intermetallic compounds crystallized in AlB$_2$-type and its low-symmetry derivative CeCu$_2$-type structures potentially host diverse frustrated magnetic structures and rich magnetotransport phenomena. We report the film growth of CeCu$_2$-type EuZn$_2$ by molecular beam epitaxy and the observation of topological Hall responses highly contrastive to isostructural EuCd$_2$. While their magnetization curves are rather similar, the topological Hall effect observed in EuZn$_2$ is simpler, with the only one component enhanced at the magnetic transition field. EuZn$_2$ may be a unique system for studying the magnetic domain boundary effect on topological Hall responses among the CeCu$_2$-type rare-earth intermetallic compounds. △ Less

Submitted 5 November, 2024; originally announced November 2024.

Comments: 12 pages, 4 figures

Unconventional two-dimensional quantum oscillations in three-dimensional thick SrRuO$_3$ films

Authors: Yuta Matsuki, Shinichi Nishihaya, Markus Kriener, Ren Oshima, Fumiya Miwa, Masaki Uchida

Abstract: SrRuO$_3$ is a prototypical transition metal oxide which hosts rich physical properties including itinerant ferromagnetism, high conductivity, and intrinsic Hall effect originating in the Weyl points. Recently, high-quality SrRuO$_3$ films with residual resistivity ratios of more than 50 have been reported to exhibit quantum oscillations at low temperatures in spite of its strong electron correlat… ▽ More SrRuO$_3$ is a prototypical transition metal oxide which hosts rich physical properties including itinerant ferromagnetism, high conductivity, and intrinsic Hall effect originating in the Weyl points. Recently, high-quality SrRuO$_3$ films with residual resistivity ratios of more than 50 have been reported to exhibit quantum oscillations at low temperatures in spite of its strong electron correlation. While the origin of the oscillations has been discussed in relation to Weyl orbits based on the Weyl semimetal band structure, so far experimentally reported results are neither consistent with each other nor with theoretically expected behavior, leaving the origin of the oscillations in SrRuO$_3$ films still elusive. In this report, we have carefully evaluated the quantum oscillations observed in three-dimensional thick SrRuO$_3$ films with a high residual resistivity ratio of RRR = 82. We reveal the coexistence of two oscillation components both derived from two-dimensional electronic states and with slightly different masses, suggesting the involvement of the surface Fermi arc states formed between different Weyl point pairs. △ Less

Submitted 12 September, 2024; originally announced September 2024.

Comments: 13 pages, 3 figures

Journal ref: Applied Physics Letters 125, 113105 (2024)

Topological Hall effect enhanced at magnetic transition fields in a frustrated magnet EuCd$_2$

Authors: S. Nishihaya, Y. Watanabe, M. Kriener, A. Nakamura, M. Uchida

Abstract: Emergent magnetic fields exerted by topological spin textures of magnets lead to an additional Hall response of itinerant carriers called the topological Hall effect (THE). While THE as a bulk effect has been widely studied, THE driven by magnetic domain boundaries (DBs) has been elusive. Here, we report rich Hall responses characterized by multiple peak structures and a hysteresis loop in films o… ▽ More Emergent magnetic fields exerted by topological spin textures of magnets lead to an additional Hall response of itinerant carriers called the topological Hall effect (THE). While THE as a bulk effect has been widely studied, THE driven by magnetic domain boundaries (DBs) has been elusive. Here, we report rich Hall responses characterized by multiple peak structures and a hysteresis loop in films of EuCd$_2$, where Eu layers form a geometrically frustrated lattice of Heisenberg spins. We uncover a THE component sharply enhanced at magnetic transition fields, indicating a giant contribution from non-trivial spin textures possibly formed at the DBs. △ Less

Submitted 18 July, 2024; originally announced July 2024.

Comments: 17 pages, 4 figures

Journal ref: Physical Review B 110, 035159 (2024)

Observation of in-plane anomalous Hall effect associated with orbital magnetization

Authors: Ayano Nakamura, Shinichi Nishihaya, Hiroaki Ishizuka, Markus Kriener, Yuto Watanabe, Masaki Uchida

Abstract: For over a century, the Hall effect, a transverse effect under out-of-plane magnetic field or magnetization, has been a cornerstone for magnetotransport studies and applications. Modern theoretical formulation based on the Berry curvature has revealed the potential that even in-plane magnetic field can induce anomalous Hall effect, but its experimental demonstration has remained difficult due to i… ▽ More For over a century, the Hall effect, a transverse effect under out-of-plane magnetic field or magnetization, has been a cornerstone for magnetotransport studies and applications. Modern theoretical formulation based on the Berry curvature has revealed the potential that even in-plane magnetic field can induce anomalous Hall effect, but its experimental demonstration has remained difficult due to its potentially small magnitude and strict symmetry requirements. Here we report observation of the in-plane anomalous Hall effect by measuring low-carrier density films of magnetic Weyl semimetal EuCd$_2$Sb$_2$. Anomalous Hall resistance exhibits distinct three-fold rotational symmetry for changes in the in-plane field component, and this can be understood in terms of out-of-plane Weyl points splitting or orbital magnetization induced by in-plane field, as also confirmed by model calculation. Our findings demonstrate the importance of in-plane field to control the Hall effect, accelerating materials development and further exploration of various in-plane field induced phenomena. △ Less

Submitted 26 May, 2024; originally announced May 2024.

Comments: 14 pages, 4 figures

Journal ref: Physical Review Letters 133, 236602 (2024)

Magnetic structure of EuCd$_2$Sb$_2$ single-crystal thin-film

Authors: Eliot Heinrich, Ayano Nakamura, Shinichi Nishihaya, Eugen Weschke, Henrik Rønnow, Masaki Uchida, Benedetta Flebus, Jian-Rui Soh

Abstract: We investigate the magnetic order in single crystalline EuCd$_2$Sb$_2$ thin films using a combined theoretical and experimental approach. Resonant elastic x-ray scattering experiments reveal a sharp magnetic peak at $q = (0, 0, \frac{1}{2})$ below $T_N = 7.2$ K, indicative of interlayer antiferromagnetic ordering. Additionally, we observe a weak diffuse magnetic signal centered at $q = (0, 0, 1)$… ▽ More We investigate the magnetic order in single crystalline EuCd$_2$Sb$_2$ thin films using a combined theoretical and experimental approach. Resonant elastic x-ray scattering experiments reveal a sharp magnetic peak at $q = (0, 0, \frac{1}{2})$ below $T_N = 7.2$ K, indicative of interlayer antiferromagnetic ordering. Additionally, we observe a weak diffuse magnetic signal centered at $q = (0, 0, 1)$ that persists above $T_N$, up to $T_C \sim 11$ K. Our Monte-Carlo simulations of a classical spin model approximation of the Eu magnetic sublattice demonstrate that the diffuse signal can arise from ferromagnetic coupling in the top few layers due to surface oxidation. On the other hand, the bulk of the sample exhibits antiferromagnetic coupling between layers. Finally, our fit of the model parameters to the magnetic ordering temperatures, shed light on the exchange couplings that are key in stabilizing the observed composite magnetic order. △ Less

Submitted 22 May, 2024; originally announced May 2024.

Comments: 7 pages, 4 figures

Ferromagnetic state with large magnetic moments realized in epitaxially strained Sr3Ru2O7 films

Authors: Ren Oshima, Tatsuto Hatanaka, Shinichi Nishihaya, Takuya Nomoto, Markus Kriener, Takahiro C. Fujita, Masashi Kawasaki, Ryotaro Arita, Masaki Uchida

Abstract: Technical advancement of oxide molecular beam epitaxy (MBE) has opened new avenues for studying various quantum transport phenomena in correlated transition-metal oxides, as exemplified by the exotic superconductivity of Sr$_2$RuO$_4$ and quantum oscillations of SrRuO$_3$. On the other hand, film research of another Ruddlesden-Popper strontium ruthenate Sr$_3$Ru$_2$O$_7$ which exhibits a unique qu… ▽ More Technical advancement of oxide molecular beam epitaxy (MBE) has opened new avenues for studying various quantum transport phenomena in correlated transition-metal oxides, as exemplified by the exotic superconductivity of Sr$_2$RuO$_4$ and quantum oscillations of SrRuO$_3$. On the other hand, film research of another Ruddlesden-Popper strontium ruthenate Sr$_3$Ru$_2$O$_7$ which exhibits a unique quantum phase related to metamagnetism in bulk systems did not progress well. Here we report the fabrication of high-quality Sr$_3$Ru$_2$O$_7$ thin films by oxide MBE and the observation of a strain-induced ferromagnetic ground state. The change in magnetic exchange coupling evaluated by first-principles calculations indicates a systematic relation between the compression of the $c$-axis length and induced ferromagnetism. Giant epitaxial strain in high-quality films will be a key to a comprehensive understanding of the magnetism in Ruddlesden-Popper strontium ruthenates Sr$_{n+1}$Ru$_n$O$_{3n+1}$, which sensitively depends on the ratio of in-plane to out-of-plane Ru-Ru distances. △ Less

Submitted 29 March, 2024; originally announced April 2024.

Comments: 15 pages, 4 figures

Journal ref: Physical Review B 109, L121113 (2024)

Berry curvature derived negative magnetoconductivity observed in type-II magnetic Weyl semimetal films

Authors: Ayano Nakamura, Shinichi Nishihaya, Hiroaki Ishizuka, Markus Kriener, Mizuki Ohno, Yuto Watanabe, Masashi Kawasaki, Masaki Uchida

Abstract: Here we study nonmonotonic features which appear both in magnetoresistivity and anomalous Hall resistivity during the simple magnetization process, by systematically measuring type-II magnetic Weyl semimetal EuCd$_2$Sb$_2$ films over a wide carrier density range. We find that a positive magnetoresistivity hump can be explained as manifestation of a field-linear term in the generalized magnetocondu… ▽ More Here we study nonmonotonic features which appear both in magnetoresistivity and anomalous Hall resistivity during the simple magnetization process, by systematically measuring type-II magnetic Weyl semimetal EuCd$_2$Sb$_2$ films over a wide carrier density range. We find that a positive magnetoresistivity hump can be explained as manifestation of a field-linear term in the generalized magnetoconductivity formula including the Berry curvature. As also confirmed by model calculation, the term can be negative and pronounced near the Weyl point energy in the case that the Weyl cones are heavily tilted. Our findings demonstrate extensive effects of the Berry curvature on various magnetotransport in magnetic Weyl semimetals beyond the anomalous Hall effect. △ Less

Submitted 14 March, 2024; originally announced March 2024.

Comments: 17 pages, 4 figures

Journal ref: Physical Review B 109, L121108 (2024)

Intrinsic insulating transport characteristics in low-carrier density EuCd2As2 films

Authors: Shinichi Nishihaya, Ayano Nakamura, Mizuki Ohno, Markus Kriener, Yuto Watanabe, Masashi Kawasaki, Masaki Uchida

Abstract: Searching for an ideal magnetic Weyl semimetal hosting only a single pair of Weyl points has been a focal point for systematic clarification of its unique magnetotransport derived from the interplay between topology and magnetization. Among the candidates, triangular-lattice antiferromagnet EuCd$_2$As$_2$ has been attracting special attention due to the prediction of the ideal Weyl semimetal phase… ▽ More Searching for an ideal magnetic Weyl semimetal hosting only a single pair of Weyl points has been a focal point for systematic clarification of its unique magnetotransport derived from the interplay between topology and magnetization. Among the candidates, triangular-lattice antiferromagnet EuCd$_2$As$_2$ has been attracting special attention due to the prediction of the ideal Weyl semimetal phase in the ferromagnetic state, however, transport properties of low-carrier density samples have remained elusive. Here we report molecular beam epitaxy growth of EuCd$_2$As$_2$ films, achieving low-hole density in the range of $10^{15}$-$10^{16}$ cm$^{-3}$ at low temperature. Transport measurements of such low-carrier density films reveal an insulating behavior with an activation gap of about 200 meV, which persists even in the field-induced ferromagnetic state. Our work provides an important experimental clue that EuCd$_2$As$_2$ is intrinsically insulating, contrary to the previous prediction. △ Less

Submitted 3 January, 2024; originally announced January 2024.

Comments: 12 pages, 3 figures

Journal ref: Appl. Phys. Lett. 124, 023103 (2024)

Edge and bulk states in Weyl-orbit quantum Hall effect as studied by Corbino measurements

Authors: Yusuke Nakazawa, Ryosuke Kurihara, Masatoshi Miyazawa, Shinichi Nishihaya, Markus Kriener, Masashi Tokunaga, Masashi Kawasaki, Masaki Uchida

Abstract: We investigate edge and bulk states in Weyl-orbit based quantum Hall effect by measuring a Corbino-type device fabricated from a topological Dirac semimetal (Cd1-xZnx)3As2 film. Clear quantum Hall plateaus are observed when measuring one-sided terminals of the Corbino-type device. This indicates that edge states of the Weyl-orbit quantum Hall effect form closed trajectories consisting of Fermi arc… ▽ More We investigate edge and bulk states in Weyl-orbit based quantum Hall effect by measuring a Corbino-type device fabricated from a topological Dirac semimetal (Cd1-xZnx)3As2 film. Clear quantum Hall plateaus are observed when measuring one-sided terminals of the Corbino-type device. This indicates that edge states of the Weyl-orbit quantum Hall effect form closed trajectories consisting of Fermi arcs and chiral zero modes independently on inner and outer sides. On the other hand, the bulk resistance does not diverge at fields where the quantum Hall plateau appears, suggesting that the Weyl orbits in the bulk region are not completely localized when applying electric current through the bulk region. △ Less

Submitted 30 December, 2023; originally announced January 2024.

Journal ref: Journal of the Physical Society of Japan 93, 023706 (2024)

Strain-modulated anisotropic electronic structure in superconducting RuO$_2$ films

Authors: Connor A. Occhialini, Luiz G. P. Martins, Shiyu Fan, Valentina Bisogni, Takahiro Yasunami, Maki Musashi, Masashi Kawasaki, Masaki Uchida, Riccardo Comin, Jonathan Pelliciari

Abstract: The binary ruthenate, RuO$_2$, has been the subject of intense interest due to its itinerant antiferromagnetism and strain-induced superconductivity. The strain mechanism and its effect on the microscopic electronic states leading to the normal and superconducting state, however, remain undisclosed. Here, we investigate highly-strained epitaxial (110) RuO$_2$ films using polarization-dependent oxy… ▽ More The binary ruthenate, RuO$_2$, has been the subject of intense interest due to its itinerant antiferromagnetism and strain-induced superconductivity. The strain mechanism and its effect on the microscopic electronic states leading to the normal and superconducting state, however, remain undisclosed. Here, we investigate highly-strained epitaxial (110) RuO$_2$ films using polarization-dependent oxygen K-edge X-ray absorption spectroscopy (XAS). Through the detection of pre-edge peaks, arising from O:$2p$ - Ru:$4d$ hybridization, we uncover the effects of epitaxial strain on the orbital/electronic structure near the Fermi level. Our data show robust strain-induced shifts of orbital levels and a reduction of hybridization strength. Furthermore, we reveal a pronounced in-plane anisotropy of the electronic structure along the $[110]/[1\bar{1}0]$ directions naturally stemming from the symmetry-breaking epitaxial strain of the substrate. The $B_{2g}$ symmetry component of the epitaxially-enforced strain breaks a sublattice degeneracy, resulting in an increase of the density of states at the Fermi level ($E_F$), possibly paving the way to superconductivity. These results underscore the importance of the effective reduction from tetragonal to orthorhombic lattice symmetry in (110) RuO$_2$ films and its relevance towards the superconducting and magnetic properties. △ Less

Submitted 1 August, 2022; originally announced August 2022.

Maximizing intrinsic anomalous Hall effect by controlling the Fermi level in simple Weyl semimetal films

Authors: Mizuki Ohno, Susumu Minami, Yusuke Nakazawa, Shin Sato, Markus Kriener, Ryotaro Arita, Masashi Kawasaki, Masaki Uchida

Abstract: Large intrinsic anomalous Hall effect (AHE) originating in the Berry curvature has attracted growing attention for potential applications. Recently proposed magnetic Weyl semimetal EuCd$_2$Sb$_{\mathrm{2}}$ provides an excellent platform for controlling the intrinsic AHE because it only hosts a Weyl-points related band structure near the Fermi energy. Here we report the fabrication of EuCd$_2$Sb… ▽ More Large intrinsic anomalous Hall effect (AHE) originating in the Berry curvature has attracted growing attention for potential applications. Recently proposed magnetic Weyl semimetal EuCd$_2$Sb$_{\mathrm{2}}$ provides an excellent platform for controlling the intrinsic AHE because it only hosts a Weyl-points related band structure near the Fermi energy. Here we report the fabrication of EuCd$_2$Sb$_{\mathrm{2}}$ single-crystalline films and control of their anomalous Hall effect by film technique. As also analyzed by first-principles calculations of energy-dependent intrinsic anomalous Hall conductivity, the obtained anomalous Hall effect shows a sharp peak as a function of carrier density, demonstrating clear energy dependence of the intrinsic AHE. △ Less

Submitted 14 April, 2022; originally announced April 2022.

Comments: 13 pages, 4 figures

Journal ref: Phys. Rev. B 105, L201101 (2022)

Magnetic Excitations in Square Lattice Iridates: Contrast between Ba$_2$IrO$_4$ and Sr$_2$IrO$_4$

Authors: J. P. Clancy, H. Gretarsson, A. Lupascu, J. A. Sears, Z. Nie, M. H. Upton, Jungho Kim, Z. Islam, M. Uchida, D. G. Schlom, K. M. Shen, Young-June Kim

Abstract: We report a resonant inelastic x-ray scattering (RIXS) investigation of ultra-thin epitaxial films of Ba$_2$IrO$_4$, and compare their low energy magnetic and spin-orbit excitations to those of their sister compound Sr$_2$IrO$_4$. Due to the 180$^\circ$ Ir-O-Ir bond, the bandwidth of the magnon and spin-orbiton is significantly larger in Ba$_2$IrO$_4$, making it difficult to describe these two typ… ▽ More We report a resonant inelastic x-ray scattering (RIXS) investigation of ultra-thin epitaxial films of Ba$_2$IrO$_4$, and compare their low energy magnetic and spin-orbit excitations to those of their sister compound Sr$_2$IrO$_4$. Due to the 180$^\circ$ Ir-O-Ir bond, the bandwidth of the magnon and spin-orbiton is significantly larger in Ba$_2$IrO$_4$, making it difficult to describe these two types of excitations as separate well-defined quasiparticles. Both types of excitations are found to be quite sensitive to the effect of epitaxial strain. In addition, we find that the d-level inversion observed in Sr$_2$IrO$_4$ is absent in Ba$_2$IrO$_4$, as predicted in recent theoretical studies. Our results illustrate that the magnetic properties of Ba$_2$IrO$_4$ are substantially different from those of Sr$_2$IrO$_4$, suggesting that these materials need to be examined more carefully with electron itinerancy taken into account. △ Less

Submitted 24 March, 2022; originally announced March 2022.

Comments: 7 pages, 4 figures

Molecular beam deposition of a new layered pnictide with distorted Sb square nets

Authors: M. Ohno, M. Uchida, Y. Nakazawa, S. Sato, M. Kriener, A. Miyake, M. Tokunaga, Y. Taguchi, M. Kawasaki

Abstract: While the family of layered pnictides $ABX_2$ ($A$ : rare or alkaline earth metals, $B$ : transition metals, $X$ : Sb/Bi) can host Dirac dispersions based on Sb/Bi square nets, nearly half of them has not been synthesized yet for possible combinations of the $A$ and $B$ cations. Here we report the fabrication of EuCdSb$_{\mathrm{2}}$ with the largest $B$-site ionic radius, which is stabilized for… ▽ More While the family of layered pnictides $ABX_2$ ($A$ : rare or alkaline earth metals, $B$ : transition metals, $X$ : Sb/Bi) can host Dirac dispersions based on Sb/Bi square nets, nearly half of them has not been synthesized yet for possible combinations of the $A$ and $B$ cations. Here we report the fabrication of EuCdSb$_{\mathrm{2}}$ with the largest $B$-site ionic radius, which is stabilized for the first time in thin film form by molecular beam deposition. EuCdSb$_{\mathrm{2}}$ crystallizes in an orthorhombic $Pnma$ structure and exhibits antiferromagnetic ordering of the Eu magnetic moments at $T_\mathrm{N}=15$K. Our successful growth will be an important step for further exploring novel Dirac materials using film techniques. △ Less

Submitted 3 June, 2021; originally announced June 2021.

Comments: 12 pages, 4 figures

Journal ref: APL Materials 9, 051107 (2021)

Quantum transport observed in films of magnetic topological semimetal EuSb$_2$

Authors: Mizuki Ohno, Masaki Uchida, Ryosuke Kurihara, Susumu Minami, Yusuke Nakazawa, Shin Sato, Markus Kriener, Motoaki Hirayama, Atsushi Miyake, Yasujiro Taguchi, Ryotaro Arita, Masashi Tokunaga, Masashi Kawasaki

Abstract: We report fabrication of EuSb$_2$ single-crystalline films and investigation of their quantum transport. First-principles calculations demonstrate that EuSb$_2$ is a magnetic topological nodal-line semimetal protected by nonsymmorphic symmetry. Observed Shubnikov-de Haas oscillations with multiple frequency components exhibit small effective masses and two-dimensional field-angle dependence even i… ▽ More We report fabrication of EuSb$_2$ single-crystalline films and investigation of their quantum transport. First-principles calculations demonstrate that EuSb$_2$ is a magnetic topological nodal-line semimetal protected by nonsymmorphic symmetry. Observed Shubnikov-de Haas oscillations with multiple frequency components exhibit small effective masses and two-dimensional field-angle dependence even in a 250 nm thick film, further suggesting possible contributions of surface states. This finding of the high-mobility magnetic topological semimetal will trigger further investigation of exotic quantum transport phenomena by controlling magnetic order in topological semimetal films. △ Less

Submitted 26 April, 2021; v1 submitted 5 April, 2021; originally announced April 2021.

Comments: 14 pages, 4 figures + supplementary 6 pages, 5 figures

Journal ref: Phys. Rev. B 103, 165144 (2021)

Enhancement of spin-orbit coupling in Dirac semimetal Cd$_{3}$As$_{2}$ films by Sb-doping

Authors: Yusuke Nakazawa, Masaki Uchida, Shinichi Nishihaya, Mizuki Ohno, Shin Sato, Masashi Kawasaki

Abstract: We present a study on magnetotransport in films of the topological Dirac semimetal Cd$_{3}$As$_{2}$ doped with Sb grown by molecular beam epitaxy. In our weak antilocalization analysis, we find a significant enhancement of the spin-orbit scattering rate, indicating that Sb doping leads to a strong increase of the pristine band-inversion energy. We discuss possible origins of this large enhancement… ▽ More We present a study on magnetotransport in films of the topological Dirac semimetal Cd$_{3}$As$_{2}$ doped with Sb grown by molecular beam epitaxy. In our weak antilocalization analysis, we find a significant enhancement of the spin-orbit scattering rate, indicating that Sb doping leads to a strong increase of the pristine band-inversion energy. We discuss possible origins of this large enhancement by comparing Sb-doped Cd$_{3}$As$_{2}$ with other compound semiconductors. Sb-doped Cd$_{3}$As$_{2}$ will be a suitable system for further investigations and functionalization of topological Dirac semimetals. △ Less

Submitted 10 January, 2021; originally announced January 2021.

Comments: 16 pages, 4 figures

Journal ref: Physical Review B 103, 045109 (2021)

Oxygen Evolution Reaction on Perovskites: A Multieffect Descriptor Study Combining Experimental and Theoretical Methods

Authors: Xi Cheng, Emiliana Fabbri, Yuya Yamashita, Ivano E. Castelli, Baejung Kim, Makoto Uchida, Raphael Haumont, Ines Puente-Orench, Thomas J. Schmidt

Abstract: The correlation between ex situ electronic conductivity, oxygen vacancy content, flat-band potential (Efb), and the oxygen evolution reaction (OER) activity for a wide range of perovskite compositions are investigated experimentally and theoretically. It is found that all of these parameters can affect the OER activity; however, none of them alone play a crucial role in determining the electrocata… ▽ More The correlation between ex situ electronic conductivity, oxygen vacancy content, flat-band potential (Efb), and the oxygen evolution reaction (OER) activity for a wide range of perovskite compositions are investigated experimentally and theoretically. It is found that all of these parameters can affect the OER activity; however, none of them alone play a crucial role in determining the electrocatalytic activity. The correlation of one single physicochemical property with the OER activity always presents deviation points, indicating that a limitation does exist for such 2-dimensional correlations. Nevertheless, these deviations can be explained considering other physicochemical properties and their correlation with the OER activity. Hence, this work aims in simultaneously linking the OER activity with several physicochemical materials properties. The concept of the OER/multidescriptor relationship represents a significant advancement in the search and design of highly active oxygen evolution catalysts, in the quest for efficient anodes in water electrolyzers. △ Less

Submitted 9 December, 2020; originally announced December 2020.

Journal ref: ACS Catal. 2018, 8, 10, 9567

Superconductivity in Uniquely Strained RuO$_{2}$ Films

Authors: Masaki Uchida, Takuya Nomoto, Maki Musashi, Ryotaro Arita, Masashi Kawasaki

Abstract: We report strain engineering of superconductivity in RuO$_2$ singlecrystalline films, which are epitaxially grown on rutile TiO$_2$ and MgF$_2$ substrates with various crystal orientations. Systematic mappings between the superconducting transition temperature and the lattice parameters reveal that shortening of specific ruthenium-oxygen bonds is a common feature among the superconducting RuO$_2$… ▽ More We report strain engineering of superconductivity in RuO$_2$ singlecrystalline films, which are epitaxially grown on rutile TiO$_2$ and MgF$_2$ substrates with various crystal orientations. Systematic mappings between the superconducting transition temperature and the lattice parameters reveal that shortening of specific ruthenium-oxygen bonds is a common feature among the superconducting RuO$_2$ films. Ab initio calculations of electronic and phononic structures for the strained RuO$_2$ films suggest the importance of soft phonon modes for emergence of the superconductivity. The findings indicate that simple transition metal oxides such as with the rutile structure may be suitable for further exploring superconductivity by controlling phonon modes through the epitaxial strain. △ Less

Submitted 28 August, 2020; originally announced August 2020.

Comments: 13 pages, 4 figures + supplementary 3 pages, 3 figures

Journal ref: Phys. Rev. Lett. 125, 147001 (2020)

Characterization of Sr2RuO4 Josephson junctions made of epitaxial films

Authors: Masaki Uchida, Ikkei Sakuraba, Minoru Kawamura, Motoharu Ide, Kei S. Takahashi, Yoshinori Tokura, Masashi Kawasaki

Abstract: We have studied fundamental properties of weak-link Sr2RuO4/Sr2RuO4 Josephson junctions fabricated by making a narrow constriction on superconducting Sr2RuO4 films through laser micro-patterning. The junctions show a typical overdamped behavior with much higher critical current density, compared with those previously reported for bulk Sr2RuO4/s-wave superconductor junctions. Observed magnetic fiel… ▽ More We have studied fundamental properties of weak-link Sr2RuO4/Sr2RuO4 Josephson junctions fabricated by making a narrow constriction on superconducting Sr2RuO4 films through laser micro-patterning. The junctions show a typical overdamped behavior with much higher critical current density, compared with those previously reported for bulk Sr2RuO4/s-wave superconductor junctions. Observed magnetic field and temperature dependences of the Josephson critical current suggest that the chiral p-wave is unlikely for the superconducting symmetry, encouraging further theoretical calculations of the Sr2RuO4/Sr2RuO4 type junctions. △ Less

Submitted 6 January, 2020; originally announced January 2020.

Comments: 14 pages, 4 figures

Journal ref: Phys. Rev. B 101, 035107 (2020)

Ferromagnetic state above room temperature in a proximitized topological Dirac semimetal

Authors: Masaki Uchida, Takashi Koretsune, Shin Sato, Markus Kriener, Yusuke Nakazawa, Shinichi Nishihaya, Yasujiro Taguchi, Ryotaro Arita, Masashi Kawasaki

Abstract: We report an above-room-temperature ferromagnetic state realized in a proximitized Dirac semimetal, which is fabricated by growing typical Dirac semimetal Cd$_3$As$_2$ films on a ferromagnetic garnet with strong perpendicular magnetization. Observed anomalous Hall conductivity with substantially large Hall angles is found to be almost proportional to magnetization and opposite in sign to it. Theor… ▽ More We report an above-room-temperature ferromagnetic state realized in a proximitized Dirac semimetal, which is fabricated by growing typical Dirac semimetal Cd$_3$As$_2$ films on a ferromagnetic garnet with strong perpendicular magnetization. Observed anomalous Hall conductivity with substantially large Hall angles is found to be almost proportional to magnetization and opposite in sign to it. Theoretical calculations based on first-principles electronic structure also demonstrate that the Fermi-level dependent anomalous Hall conductivity reflects the Berry curvature originating in the split Weyl nodes. The present Dirac-semimetal/ferromagnetic-insulator heterostructure will provide a novel platform for exploring Weyl-node transport phenomena and spintronic functions lately proposed for topological semimetals. △ Less

Submitted 26 December, 2019; originally announced December 2019.

Comments: 15 pages, 4 figures

Journal ref: Phys. Rev. B 100, 245148 (2019)

Molecular beam epitaxy of three-dimensionally thick Dirac semimetal Cd3As2 films

Authors: Y. Nakazawa, M. Uchida, S. Nishihaya, S. Sato, A. Nakao, J. Matsuno, M. Kawasaki

Abstract: Rapid progress of quantum transport study in topological Dirac semimetal, including observations of quantum Hall effect in two-dimensional (2D) Cd$_{\mathrm{3}}$As$_{\mathrm{2}}$ samples, has uncovered even more interesting quantum transport properties in high-quality and three-dimensional (3D) samples. However, such 3D Cd$_{\mathrm{3}}$As$_{\mathrm{2}}$ films with low carrier density and high ele… ▽ More Rapid progress of quantum transport study in topological Dirac semimetal, including observations of quantum Hall effect in two-dimensional (2D) Cd$_{\mathrm{3}}$As$_{\mathrm{2}}$ samples, has uncovered even more interesting quantum transport properties in high-quality and three-dimensional (3D) samples. However, such 3D Cd$_{\mathrm{3}}$As$_{\mathrm{2}}$ films with low carrier density and high electron mobility have been hardly obtained. Here we report the growth and characterization of 3D thick Cd$_{\mathrm{3}}$As$_{\mathrm{2}}$ films adopting molecular beam epitaxy. The highest electron mobility ($μ$ = 3 $\times$ 10$^{4}$ cm$^{2}$/Vs) among the reported film samples has been achieved at a low carrier density ($\textit{n} = 5$ $\times$ 10$^{16}$ cm$^{-3}$). In the magnetotransport measurement, Hall plateau-like structures are commonly observed in spite of the 3D thick films ($\textit{t} = 120$ nm). On the other hand, field angle dependence of the plateau-like structures and corresponding Shubunikov-de Haas oscillations rather shows a 3D feature, suggesting the appearance of unconventional magnetic orbit, also distinct from the one described by the semiclassical Weyl-orbit equation. △ Less

Submitted 17 July, 2019; originally announced July 2019.

Comments: 11 pages, 3 figures + supplementary 6 pages, 3 figures

Journal ref: APL Materials 7, 071109 (2019), selected as a Featured Article

Quantized surface transport in topological Dirac semimetal films

Authors: Shinichi Nishihaya, Masaki Uchida, Yusuke Nakazawa, Ryosuke Kurihara, Kazuto Akiba, Markus Kriener, Atsushi Miyake, Yasujiro Taguchi, Masashi Tokunaga, Masashi Kawasaki

Abstract: Unconventional surface states protected by non-trivial bulk orders are sources of various exotic quantum transport in topological materials. One prominent example is the unique magnetic orbit, so-called Weyl orbit, in topological semimetals where two spatially separated surface Fermi-arcs are interconnected across the bulk. The recent observation of quantum Hall states in Dirac semimetal Cd3As2 bu… ▽ More Unconventional surface states protected by non-trivial bulk orders are sources of various exotic quantum transport in topological materials. One prominent example is the unique magnetic orbit, so-called Weyl orbit, in topological semimetals where two spatially separated surface Fermi-arcs are interconnected across the bulk. The recent observation of quantum Hall states in Dirac semimetal Cd3As2 bulks have drawn attention to the novel quantization phenomena possibly evolving from the Weyl orbit. Here we report surface quantum oscillation and its evolution into quantum Hall states in Cd3As2 thin film samples, where bulk dimensionality, Fermi energy, and band topology are systematically controlled. We reveal essential involvement of bulk states in the quantized surface transport and the resultant quantum Hall degeneracy depending on the bulk occupation. Our demonstration of surface transport controlled in film samples also paves a way for engineering Fermi-arc-mediated transport in topological semimetals. △ Less

Submitted 22 April, 2019; originally announced April 2019.

Comments: 18 pages, 4 figures

Anomalous Enhancement of Upper Critical Field in Sr2RuO4 Thin Films

Authors: M. Uchida, M. Ide, M. Kawamura, K. S. Takahashi, Y. Kozuka, Y. Tokura, M. Kawasaki

Abstract: We report large enhancement of upper critical field Hc2 observed in superconducting Sr2RuO4 thin films. Through dimensional crossover approaching two dimensions, Hc2 except the in-plane field direction is dramatically enhanced compared to bulks, following a definite relation distinct from bulk one between Hc2 and the transition temperature. The anomalous enhancement of Hc2 is highly suggestive of… ▽ More We report large enhancement of upper critical field Hc2 observed in superconducting Sr2RuO4 thin films. Through dimensional crossover approaching two dimensions, Hc2 except the in-plane field direction is dramatically enhanced compared to bulks, following a definite relation distinct from bulk one between Hc2 and the transition temperature. The anomalous enhancement of Hc2 is highly suggestive of important changes of the superconducting properties, possibly accompanied with rotation of the triplet d-vector. Our findings will become a crucial step to further explore exotic properties by employing Sr2RuO4 thin films. △ Less

Submitted 20 March, 2019; originally announced March 2019.

Comments: 15 pages, 4 figures

Journal ref: Phys. Rev. B 99, 161111 (2019)

Molecular beam epitaxy growth of superconducting Sr2RuO4 films

Authors: M. Uchida, M. Ide, H. Watanabe, K. S. Takahashi, Y. Tokura, M. Kawasaki

Abstract: We report growth of superconducting Sr2RuO4 films by oxide molecular beam epitaxy (MBE). Careful tuning of the Ru flux with an electron beam evaporator enables us to optimize growth conditions including the Ru/Sr flux ratio and also to investigate stoichiometry effects on the structural and transport properties. The highest onset transition temperature of about 1.1 K is observed for films grown in… ▽ More We report growth of superconducting Sr2RuO4 films by oxide molecular beam epitaxy (MBE). Careful tuning of the Ru flux with an electron beam evaporator enables us to optimize growth conditions including the Ru/Sr flux ratio and also to investigate stoichiometry effects on the structural and transport properties. The highest onset transition temperature of about 1.1 K is observed for films grown in a slightly Ru-rich flux condition in order to suppress Ru deficiency. The realization of superconducting Sr2RuO4 films via oxide MBE opens up a new route to study the unconventional superconductivity of this material. △ Less

Submitted 20 March, 2019; originally announced March 2019.

Comments: 10 pages, 3 figures

Journal ref: APL Materials 5, 106108 (2017)

Signatures of charge-order correlations in transport properties of electron-doped cuprate superconductors

Authors: Hideki Matsuoka, Masaki Nakano, Masaki Uchida, Masashi Kawasaki, Yoshihiro Iwasa

Abstract: The high-temperature superconductivity in copper oxides emerges under strong influence of spin correlations in doped Mott insulators. Recent discoveries of charge-order (CO) correlations in Y-based hole-doped cuprates as well as in electron-doped cuprates suggest that charge correlations should also play an important role on the electronic states of cuprates, although those correlations have been… ▽ More The high-temperature superconductivity in copper oxides emerges under strong influence of spin correlations in doped Mott insulators. Recent discoveries of charge-order (CO) correlations in Y-based hole-doped cuprates as well as in electron-doped cuprates suggest that charge correlations should also play an important role on the electronic states of cuprates, although those correlations have been so far detected mainly by x-ray scattering measurements. Here we show signatures of CO correlations in transport properties of electron-doped cuprates as anomalous enhancement of the metal-to-insulator crossover temperature (Tmin) appears in the limited doping range near the onset of superconductivity, while it decreases exactly when superconductivity sets in. We explain this non-monotonous peak-like behavior of Tmin in terms of the evolution of the electronic states through development of CO correlations and appearance of the hole pockets in the folded Fermi surface, which impact on transport properties consecutively at different locations in the momentum space. △ Less

Submitted 20 September, 2018; originally announced September 2018.

Comments: 23 pages, 6 figures, accepted for publication in Physical Review B

Negative magnetoresistance suppressed through topological phase transition in (Cd1-xZnx)3As2 films

Authors: S. Nishihaya, M. Uchida, Y. Nakazawa, K. Akiba, M. Kriener, Y. Kozuka, A. Miyake, Y. Taguchi, M. Tokunaga, M. Kawasaki

Abstract: The newly discovered topological Dirac semimetals host the possibilities of various topological phase transitions through the control of spin-orbit coupling as well as symmetries and dimensionalities. Here, we report a magnetotransport study of high-mobility (Cd1-xZnx)3As2 films, where the topological Dirac semimetal phase can be turned into a trivial insulator via chemical substitution. By high-f… ▽ More The newly discovered topological Dirac semimetals host the possibilities of various topological phase transitions through the control of spin-orbit coupling as well as symmetries and dimensionalities. Here, we report a magnetotransport study of high-mobility (Cd1-xZnx)3As2 films, where the topological Dirac semimetal phase can be turned into a trivial insulator via chemical substitution. By high-field measurements with a Hall-bar geometry, magnetoresistance components ascribed to the chiral charge pumping have been distinguished from other extrinsic effects. The negative magnetoresistance exhibits a clear suppression upon Zn doping, reflecting decreasing Berry curvature of the band structure as the topological phase transition is induced by reducing the spin-orbit coupling. △ Less

Submitted 6 June, 2018; originally announced June 2018.

Comments: 16 pages, 6 figures

Journal ref: Physical Review B 97, 245103 (2018)

Gate-tuned quantum Hall states in Dirac semimetal (Cd1-xZnx)3As2

Authors: Shinichi Nishihaya, Masaki Uchida, Yusuke Nakazawa, Markus Kriener, Yusuke Kozuka, Yasujiro Taguchi, Masashi Kawasaki

Abstract: The recent discovery of topological Dirac semimetals (DSM) has provoked intense curiosity not only on Weyl physics in solids, but also on topological phase transitions originating from DSM. One example is controlling the dimensionality to realize two-dimensional quantum phases such as quantum Hall and quantum spin Hall states. For investigating these phases, the Fermi level is a key controlling pa… ▽ More The recent discovery of topological Dirac semimetals (DSM) has provoked intense curiosity not only on Weyl physics in solids, but also on topological phase transitions originating from DSM. One example is controlling the dimensionality to realize two-dimensional quantum phases such as quantum Hall and quantum spin Hall states. For investigating these phases, the Fermi level is a key controlling parameter. From this perspective, we report here the carrier-density control of quantum Hall states realized in thin films of DSM Cd3As2. Chemical doping of Zn combined with electrostatic gating has enabled us to tune the carrier density over a wide range and continuously even across the charge neutrality point. Comprehensive analyses of the gate-tuned quantum transport have revealed Landau level formation from linearly dispersed sub-bands and its contribution to the quantum Hall states. Our achievements pave the way also for investigating the low energy physics near the Dirac points of DSM. △ Less

Submitted 19 May, 2018; originally announced May 2018.

Comments: 20 pages, 4 figures

Journal ref: Science Advances 4, eaar5668 (2018)

Structural characterisation of high-mobility Cd3As2 films crystallised on SrTiO3

Authors: Yusuke Nakazawa, Masaki Uchida, Shinichi Nishihaya, Markus Kriener, Yusuke Kozuka, Yasujiro Taguchi, Masashi Kawasaki

Abstract: Cd3As2 has long been known as a high-mobility semiconductor. The recent finding of a topological semimetal state in this compound has demanded growth of epitaxial films with high crystallinity and controlled thickness. Here we report the structural characterisation of Cd3As2 films grown on SrTiO3 substrates by solid-phase epitaxy at high temperatures up to 600 C by employing optimised capping laye… ▽ More Cd3As2 has long been known as a high-mobility semiconductor. The recent finding of a topological semimetal state in this compound has demanded growth of epitaxial films with high crystallinity and controlled thickness. Here we report the structural characterisation of Cd3As2 films grown on SrTiO3 substrates by solid-phase epitaxy at high temperatures up to 600 C by employing optimised capping layers and substrates. The As triangular lattice is epitaxially stacked on the Ti square lattice of the (001) SrTiO3 substrate, producing (112)-oriented Cd3As2 films exhibiting high crystallinity with a rocking-curve width of 0.02 and a high electron mobility exceeding 30,000 cm2/Vs. The systematic characterisation of films annealed at various temperatures allowed us to identify two-step crystallisation processes in which out-of-plane and subsequently in-plane directions occur with increasing annealing temperature. Our findings on the high-temperature crystallisation process of Cd3As2 enable a unique approach for fabricating high-quality Cd3As2 films and elucidating quantum transport by back gating through the SrTiO3 substrate. △ Less

Submitted 17 April, 2018; originally announced April 2018.

Comments: 10 pages, 4 figures

Journal ref: Scientific Reports 8, 2244 (2018)

Topological Properties and Functionalities in Oxide Thin Films and Interfaces

Authors: Masaki Uchida, Masashi Kawasaki

Abstract: As symbolized by the Nobel Prize in Physics 2016, "topology" has been recognized as an essential standpoint to understand and control the physics of condensed matter. This concept may be spreading even into application areas such as novel electronics. In this trend, there has been reported a number of study for the oxide films and heterostructures with topologically non-trivial electronic or magne… ▽ More As symbolized by the Nobel Prize in Physics 2016, "topology" has been recognized as an essential standpoint to understand and control the physics of condensed matter. This concept may be spreading even into application areas such as novel electronics. In this trend, there has been reported a number of study for the oxide films and heterostructures with topologically non-trivial electronic or magnetic states. In this review, we overview the trends of new topological properties and functionalities in oxide materials with sorting out a number of examples. The technological advances in oxide film growth achieved over the last few decades are now opening the door for harnessing novel topological properties. △ Less

Submitted 8 March, 2018; originally announced March 2018.

Comments: 15 pages, 7 figures

Journal ref: Journal of Physics D: Applied Physics 51, 143001 (2018)

Electric-field control of anomalous and topological Hall effects in oxide bilayer thin films

Authors: Yuki Ohuchi, Jobu Matsuno, Naoki Ogawa, Yusuke Kozuka, Masaki Uchida, Yoshinori Tokura, Masashi Kawasaki

Abstract: One of the key technologies in spintronics is to tame spin-orbit coupling (SOC) that links spin and motion of electrons, giving rise to intriguing magneto-transport properties in itinerant magnets. Prominent examples of such SOC-based phenomena are anomalous and topological Hall effects. However, controlling them by electric field has remained unachieved since electric field tends to be screened i… ▽ More One of the key technologies in spintronics is to tame spin-orbit coupling (SOC) that links spin and motion of electrons, giving rise to intriguing magneto-transport properties in itinerant magnets. Prominent examples of such SOC-based phenomena are anomalous and topological Hall effects. However, controlling them by electric field has remained unachieved since electric field tends to be screened in itinerant magnets. Here we demonstrate that both anomalous and topological Hall effects can be modulated by electric field in oxide heterostructures consisting of ferromagnetic SrRuO$_{3}$ and nonmagnetic SrIrO$_{3}$. We observed clear electric-field effect only when SrIrO$_{3}$ is inserted between SrRuO$_{3}$ and a gate dielectric. Our results establish that strong SOC of nonmagnetic materials such as SrIrO$_{3}$ is essential in electrical tuning of these Hall effects and possibly other SOC-related phenomena. △ Less

Submitted 18 January, 2018; originally announced January 2018.

Comments: 23 pages, 4 figures; revised version has been published in Nat. Commun. 9, 213 (2018)

Journal ref: Nat. Commun. 9, 213 (2018)

Quantum Hall states observed in thin films of Dirac semimetal Cd3As2

Authors: Masaki Uchida, Yusuke Nakazawa, Shinichi Nishihaya, Kazuto Akiba, Markus Kriener, Yusuke Kozuka, Atsushi Miyake, Yasujiro Taguchi, Masashi Tokunaga, Naoto Nagaosa, Yoshinori Tokura, Masashi Kawasaki

Abstract: A well known semiconductor Cd3As2 has reentered the spotlight due to its unique electronic structure and quantum transport phenomena as a topological Dirac semimetal. For elucidating and controlling its topological quantum state, high-quality Cd3As2 thin films have been highly desired. Here we report the development of an elaborate growth technique of high-crystallinity and high-mobility Cd3As2 fi… ▽ More A well known semiconductor Cd3As2 has reentered the spotlight due to its unique electronic structure and quantum transport phenomena as a topological Dirac semimetal. For elucidating and controlling its topological quantum state, high-quality Cd3As2 thin films have been highly desired. Here we report the development of an elaborate growth technique of high-crystallinity and high-mobility Cd3As2 films with controlled thicknesses and the observation of quantum Hall effect dependent on the film thickness. With decreasing the film thickness to 10 nm, the quantum Hall states exhibit variations such as a change in the spin degeneracy reflecting the Dirac dispersion with a large Fermi velocity. Details of the electronic structure including subband splitting and gap opening are identified from the quantum transport depending on the confinement thickness, suggesting the presence of a two-dimensional topological insulating phase. The demonstration of quantum Hall states in our high-quality Cd3As2 films paves a road to study quantum transport and device application in topological Dirac semimetal and its derivative phases. △ Less

Submitted 26 December, 2017; originally announced December 2017.

Comments: 24 pages, 4 figures + supplementary 13 pages, 13 figures

Journal ref: Nature Communications 8, 2274 (2017)

Adsorption-controlled growth of La-doped BaSnO3 by molecular-beam epitaxy

Authors: Hanjong Paik, Zhen Chen, Edward Lochocki, Ariel H. Seidner, Amit Verma, Nicholas Tanen, Jisung Park, Masaki Uchida, ShunLi Shang, Bi-Cheng Zhou, Mario Brützam, Reinhard Uecker, Zi-Kui Liu, Debdeep Jena, Kyle M. Shen, David A. Muller, Darrell G. Schlom

Abstract: Epitaxial La doped BaSnO3 films were grown in an adsorption controlled regime by molecular beam epitaxy, where the excess volatile SnOx desorbs from the film surface. A film grown on a (001) DyScO3 substrate exhibited a mobility of 183 cm^2 V^-1 s^-1 at room temperature and 400 cm^2 V^-1 s^-1 at 10 K, despite the high concentration (1.2x10^11 cm^-2) of threading dislocations present. In comparison… ▽ More Epitaxial La doped BaSnO3 films were grown in an adsorption controlled regime by molecular beam epitaxy, where the excess volatile SnOx desorbs from the film surface. A film grown on a (001) DyScO3 substrate exhibited a mobility of 183 cm^2 V^-1 s^-1 at room temperature and 400 cm^2 V^-1 s^-1 at 10 K, despite the high concentration (1.2x10^11 cm^-2) of threading dislocations present. In comparison to other reports, we observe a much lower concentration of (BaO)2 Ruddlesden Popper crystallographic shear faults. This suggests that in addition to threading dislocations that other defects possibly (BaO)2 crystallographic shear defects or point defects significantly reduce the electron mobility. △ Less

Submitted 1 November, 2017; originally announced November 2017.

A tunable low-energy photon source for high-resolution angle-resolved photoemission spectroscopy

Authors: John W. Harter, Philip D. C. King, Eric J. Monkman, Daniel E. Shai, Yuefeng Nie, Masaki Uchida, Bulat Burganov, Shouvik Chatterjee, Kyle M. Shen

Abstract: We describe a tunable low-energy photon source consisting of a laser-driven xenon plasma lamp coupled to a Czerny-Turner monochromator. The combined tunability, brightness, and narrow spectral bandwidth make this light source useful in laboratory-based high-resolution photoemission spectroscopy experiments. The source supplies photons with energies up to ~7 eV, delivering under typical conditions… ▽ More We describe a tunable low-energy photon source consisting of a laser-driven xenon plasma lamp coupled to a Czerny-Turner monochromator. The combined tunability, brightness, and narrow spectral bandwidth make this light source useful in laboratory-based high-resolution photoemission spectroscopy experiments. The source supplies photons with energies up to ~7 eV, delivering under typical conditions >10^12 ph/s within a 10 meV spectral bandwidth, which is comparable to helium plasma lamps and many synchrotron beamlines. We first describe the lamp and monochromator system and then characterize its output, with attention to those parameters which are of interest for photoemission experiments. Finally, we present angle-resolved photoemission spectroscopy data using the light source and compare its performance to a conventional helium plasma lamp. △ Less

Submitted 11 April, 2017; originally announced April 2017.

Journal ref: Review of Scientific Instruments 83, 113103 (2012)

Evolution of Insulator-Metal Phase Transitions in Epitaxial Tungsten Oxide Films during Electrolyte-Gating

Authors: Shinichi Nishihaya, Masaki Uchida, Yusuke Kozuka, Yoshihiro Iwasa, Masashi Kawasaki

Abstract: An interface between an oxide and an electrolyte gives rise to various processes as exemplified by electrostatic charge accumulation/depletion and electrochemical reactions such as intercalation/decalation under electric field. Here we directly compare typical device operations of those in electric double layer transistor geometry by adopting ${A}$-site vacant perovskite WO$_3$ epitaxial thin film… ▽ More An interface between an oxide and an electrolyte gives rise to various processes as exemplified by electrostatic charge accumulation/depletion and electrochemical reactions such as intercalation/decalation under electric field. Here we directly compare typical device operations of those in electric double layer transistor geometry by adopting ${A}$-site vacant perovskite WO$_3$ epitaxial thin films as a channel material and two different electrolytes as gating agent. $\textit{In situ}$ measurements of x-ray diffraction and channel resistance performed during the gating revealed that in both the cases WO$_3$ thin film reaches a new metallic state through multiple phase transitions, accompanied by the change in out-of-plane lattice constant. Electrons are electrostatically accumulated from the interface side with an ionic liquid, while alkaline metal ions are more uniformly intercalated into the film with a polymer electrolyte. We systematically demonstrate this difference in the electrostatic and electrochemical processes, by comparing doped carrier density, lattice deformation behavior, and time constant of the phase transitions. △ Less

Submitted 10 August, 2016; originally announced August 2016.

Comments: 25 pages, 6 figures, ACS Applied Matter. in press

Strain Control of Fermiology and Many-Body Interactions in Two-Dimensional Ruthenates

Authors: B. Burganov, C. Adamo, A. Mulder, M. Uchida, P. D. C. King, J. W. Harter, D. E. Shai, A. S. Gibbs, A. P. Mackenzie, R. Uecker, M. Bruetzam, M. R. Beasley, C. J. Fennie, D. G. Schlom, K. M. Shen

Abstract: Here we demonstrate how the Fermi surface topology and quantum many-body interactions can be manipulated via epitaxial strain in the spin-triplet superconductor Sr$_2$RuO$_4$ and its isoelectronic counterpart Ba$_2$RuO$_4$ using oxide molecular beam epitaxy (MBE), \emph{in situ} angle-resolved photoemission spectroscopy (ARPES), and transport measurements. Near the topological transition of the… ▽ More Here we demonstrate how the Fermi surface topology and quantum many-body interactions can be manipulated via epitaxial strain in the spin-triplet superconductor Sr$_2$RuO$_4$ and its isoelectronic counterpart Ba$_2$RuO$_4$ using oxide molecular beam epitaxy (MBE), \emph{in situ} angle-resolved photoemission spectroscopy (ARPES), and transport measurements. Near the topological transition of the $γ$ Fermi surface sheet, we observe clear signatures of critical fluctuations, while the quasiparticle mass enhancement is found to increase rapidly and monotonically with increasing Ru-O bond distance. Our work demonstrates the possibilities for using epitaxial strain as a disorder-free means of manipulating emergent properties, many-body interactions, and potentially the superconductivity in correlated materials. △ Less

Submitted 18 May, 2016; originally announced May 2016.

Journal ref: Phys. Rev. Lett. 116, 197003 (2016)

Epitaxially Stabilized Oxide Composed of Twisted Triangular-Lattice Layers

Authors: M. Uchida, K. Ohba, Y. Ohuchi, Y. Kozuka, M. Kawasaki

Abstract: Layered oxides have been intensively studied due to their high designability for various electronic functions. Here we synthesize a new oxide as epitaxial thin film form by pulsed laser deposition. Film characterizations including cross-section and plan-view transmission electron microscopy confirm that the film is composed of twisted stack of triangular-lattice Rh and Bi layers. We foresee that t… ▽ More Layered oxides have been intensively studied due to their high designability for various electronic functions. Here we synthesize a new oxide as epitaxial thin film form by pulsed laser deposition. Film characterizations including cross-section and plan-view transmission electron microscopy confirm that the film is composed of twisted stack of triangular-lattice Rh and Bi layers. We foresee that the concept of twisted oxide layers will open up a new route to design further functional layered oxides. △ Less

Submitted 25 February, 2016; originally announced February 2016.

Comments: 5 pages, 4 figures

Journal ref: Chem. Mater. 28, 1165 (2016)

All-in-all-out magnetic domain wall conduction in pyrochlore iridate heterointerface

Authors: T. C. Fujita, M. Uchida, Y. Kozuka, W. Sano, A. Tsukazaki, T. Arima, M. Kawasaki

Abstract: Pyrochlore oxides possessing "all-in-all-out" spin ordering have attracted burgeoning interest as a rich ground of emergent states. This ordering has two distinct types of magnetic domains (all-in-all-out or all-out-all-in) with broken time-reversal symmetry, and a non-trivial metallic surface state has been theoretically demonstrated to appear at their domain wall. Here, we report on observation… ▽ More Pyrochlore oxides possessing "all-in-all-out" spin ordering have attracted burgeoning interest as a rich ground of emergent states. This ordering has two distinct types of magnetic domains (all-in-all-out or all-out-all-in) with broken time-reversal symmetry, and a non-trivial metallic surface state has been theoretically demonstrated to appear at their domain wall. Here, we report on observation of this metallic conduction at the single all-in-all-out/all-out-all-in magnetic domain wall formed at the heterointerface of two pyrochlore iridates. By utilizing different magnetoresponses of them with different lanthanide ions, the domain wall is controllably inserted at the heterointerface, the surface state being detected as anomalous conduction enhancement with a ferroic hysteresis. Our establishment paves the way for further investigation and manipulation of this new type of surface transport. △ Less

Submitted 1 February, 2016; originally announced February 2016.

Comments: 23 pages, 7 figures

Journal ref: Phys. Rev. B 93, 064419 (2016)

Effective Carrier Doping and Metallization in LaxSr2-x-yBayIrO4-delta Thin Films

Authors: M. Ito, M. Uchida, Y. Kozuka, K. S. Takahashi, M. Kawasaki

Abstract: We fabricate LaxSr2-x-yBayIrO4-delta thin films by pulsed laser deposition, in an effort to realize the effective carrier doping and metallization in the Sr2IrO4 system. We design ideal in-plane Ir-O-Ir frame structure by utilizing tensile substrate strain and Ba substitution, as well as control La doping and oxygen deficiency. This enables us to elucidate relation between the charge transport and… ▽ More We fabricate LaxSr2-x-yBayIrO4-delta thin films by pulsed laser deposition, in an effort to realize the effective carrier doping and metallization in the Sr2IrO4 system. We design ideal in-plane Ir-O-Ir frame structure by utilizing tensile substrate strain and Ba substitution, as well as control La doping and oxygen deficiency. This enables us to elucidate relation between the charge transport and the carrier density through systematic changes from original p-type spin-orbit Mott insulator to highly doped n-type metal. △ Less

Submitted 28 January, 2016; originally announced January 2016.

Comments: 6 pages, 7 figures

Journal ref: Phys. Rev. B 93, 045139 (2016)

All-in-all-out magnetic domain size in pyrochlore iridate thin films as probed by local magnetotransport

Authors: T. C. Fujita, M. Uchida, Y. Kozuka, S. Ogawa, A. Tsukazaki, T. Arima, M. Kawasaki

Abstract: Pyrochlore iridates have attracted growing attention because of a theoretical prediction of a possible topological semimetal phase originating from all-in-all-out spin ordering. Related to the topological band structure, recent findings of the magnetic domain wall conduction have stimulated investigations of magnetic domain distribution in this system. Here, we investigate the size of magnetic dom… ▽ More Pyrochlore iridates have attracted growing attention because of a theoretical prediction of a possible topological semimetal phase originating from all-in-all-out spin ordering. Related to the topological band structure, recent findings of the magnetic domain wall conduction have stimulated investigations of magnetic domain distribution in this system. Here, we investigate the size of magnetic domains in Eu$_2$Ir$_2$O$_7$ single crystalline thin films by magnetoresistance (MR) using microscale Hall bars. Two distinct magnetic domains of the all-in-all-out spin structure are known to exhibit linear MR but with opposite signs, which enables us to estimate the ratio of the two domains in the patterned channel. The linear MR for 80 ${\times}$ 60 $μ$m$^2$ channel is nearly zero after zero-field cooling, suggesting random distribution of domains smaller than the channel size. In contrast, the wide distribution of the value of the linear MR is detected in 2 ${\times}$ 2 $μ$m$^2$ channel, reflecting the detectable domain size depending on each cooling-cycle. Compared to simulation results, we estimate the average size of a single all-in-all-out magnetic domain as 1-2 $μ$m. △ Less

Submitted 12 January, 2016; v1 submitted 11 January, 2016; originally announced January 2016.

Comments: 16 pages, 3 figures

Journal ref: Appl. Phys. Lett. 108, 022402 (2016)

Formation and observation of a quasi-two-dimensional $d_{xy}$ electron liquid in epitaxially stabilized Sr$_{2-x}$La$_{x}$TiO$_{4}$ thin films

Authors: Y. F. Nie, D. Di Sante, S. Chatterjee, P. D. C. King, M. Uchida, S. Ciuchi, D. G. Schlom, K. M. Shen

Abstract: We report the formation and observation of an electron liquid in Sr$_{2-x}$La$_{x}$TiO$_4$, the quasi-two-dimensional counterpart of SrTiO$_3$, through reactive molecular-beam epitaxy and {\it in situ} angle-resolved photoemission spectroscopy. The lowest lying states are found to be comprised of Ti 3$d_{xy}$ orbitals, analogous to the LaAlO$_3$/SrTiO$_3$ interface and exhibit unusually broad feat… ▽ More We report the formation and observation of an electron liquid in Sr$_{2-x}$La$_{x}$TiO$_4$, the quasi-two-dimensional counterpart of SrTiO$_3$, through reactive molecular-beam epitaxy and {\it in situ} angle-resolved photoemission spectroscopy. The lowest lying states are found to be comprised of Ti 3$d_{xy}$ orbitals, analogous to the LaAlO$_3$/SrTiO$_3$ interface and exhibit unusually broad features characterized by quantized energy levels and a reduced Luttinger volume. Using model calculations, we explain these characteristics through an interplay of disorder and electron-phonon coupling acting co-operatively at similar energy scales, which provides a possible mechanism for explaining the low free carrier concentrations observed at various oxide heterostructures such as the LaAlO$_3$/SrTiO$_3$ interface. △ Less

Submitted 31 August, 2015; originally announced August 2015.

Journal ref: Phys. Rev. Lett. 115, 096405 (2015)

Odd-parity magnetoresistance in pyrochlore iridate thin films with broken time-reversal symmetry

Authors: T. C. Fujita, Y. Kozuka, M. Uchida, A. Tsukazaki, T. Arima, M. Kawasaki

Abstract: A new class of materials termed topological insulators have been intensively investigated due to their unique Dirac surface state carrying dissipationless edge spin currents. Recently, it has been theoretically proposed that the three dimensional analogue of this type of band structure, the Weyl Semimetal phase, is materialized in pyrochlore oxides with strong spin-orbit coupling, accompanied by a… ▽ More A new class of materials termed topological insulators have been intensively investigated due to their unique Dirac surface state carrying dissipationless edge spin currents. Recently, it has been theoretically proposed that the three dimensional analogue of this type of band structure, the Weyl Semimetal phase, is materialized in pyrochlore oxides with strong spin-orbit coupling, accompanied by all-in-all-out spin ordering. Here, we report on the fabrication and magnetotransport of Eu2Ir2O7 single crystalline thin films. We reveal that one of the two degenerate all-in-all-out domain structures, which are connected by time-reversal operation, can be selectively formed by the polarity of the cooling magnetic field. Once formed, the domain is robust against an oppositely polarised magnetic field, as evidenced by an unusual odd field dependent term in the magnetoresistance and an anomalous term in the Hall resistance. Our findings pave the way for exploring the predicted novel quantum transport phenomenon at the surfaces/interfaces or magnetic domain walls of pyrochlore iridates. △ Less

Submitted 6 August, 2015; originally announced August 2015.

Journal ref: Scientific Reports 5, 9711 (2015)

Field-direction control of the type of charge carriers in nonsymmorphic IrO2

Authors: M. Uchida, W. Sano, K. S. Takahashi, T. Koretsune, Y. Kozuka, R. Arita, Y. Tokura, M. Kawasaki

Abstract: In the quest for switching of the charge carrier type in conductive materials, we focus on nonsymmorphic crystals, which are expected to have highly anisotropic folded Fermi surfaces due to the symmetry requirements. Following simple tight-binding model simulation, we prepare nonsymmorphic IrO2 single-crystalline films with various growth orientations by molecular beam epitaxy, and systematically… ▽ More In the quest for switching of the charge carrier type in conductive materials, we focus on nonsymmorphic crystals, which are expected to have highly anisotropic folded Fermi surfaces due to the symmetry requirements. Following simple tight-binding model simulation, we prepare nonsymmorphic IrO2 single-crystalline films with various growth orientations by molecular beam epitaxy, and systematically quantify their Hall effect for the corresponding field directions. The results clearly demonstrate that the dominant carrier type can be intrinsically controlled by the magnetic field direction, as also evidenced by first-principles calculations revealing nontrivial momentum dependence of the group velocity and mass tensor on the folded Fermi surfaces and its anisotropic nature for the field direction. △ Less

Submitted 2 July, 2015; originally announced July 2015.

Comments: 12 pages, 4 figures

Journal ref: Phys. Rev. B 91, 241119(R) (2015)

Interplay of Spin-Orbit Interactions, Dimensionality, and Octahedral Rotations in Semimetallic SrIrO$_3$

Authors: Y. F. Nie, P. D. C. King, C. H. Kim, M. Uchida, H. I. Wei, B. D. Faeth, J. P. Ruf, J. P. C. Ruff, L. Xie, X. Pan, C. J. Fennie, D. G. Schlom, K. M. Shen

Abstract: We employ reactive molecular-beam epitaxy to synthesize the metastable perovskite SrIrO$_{3}$ and utilize {\it in situ} angle-resolved photoemission to reveal its electronic structure as an exotic narrow-band semimetal. We discover remarkably narrow bands which originate from a confluence of strong spin-orbit interactions, dimensionality, and both in- and out-of-plane IrO$_6$ octahedral rotations.… ▽ More We employ reactive molecular-beam epitaxy to synthesize the metastable perovskite SrIrO$_{3}$ and utilize {\it in situ} angle-resolved photoemission to reveal its electronic structure as an exotic narrow-band semimetal. We discover remarkably narrow bands which originate from a confluence of strong spin-orbit interactions, dimensionality, and both in- and out-of-plane IrO$_6$ octahedral rotations. The partial occupation of numerous bands with strongly mixed orbital characters signals the breakdown of the single-band Mott picture that characterizes its insulating two-dimensional counterpart, Sr$_{2}$IrO$_{4}$, illustrating the power of structure-property relations for manipulating the subtle balance between spin-orbit interactions and electron-electron interactions. △ Less

Submitted 9 January, 2015; originally announced January 2015.

Journal ref: PRL 114, 016401 (2015)

Correlated vs. conventional insulating behavior in the Jeff=1/2 vs. 3/2 bands in the layered iridate Ba2IrO4

Authors: M. Uchida, Y. F. Nie, P. D. C. King, C. H. Kim, C. J. Fennie, D. G. Schlom, K. M. Shen

Abstract: We employ molecular beam epitaxy to stabilize Ba2IrO4 thin films and utilize in situ angle-resolved photoemission spectroscopy to investigate the evolution of its electronic structure through the Neel temperature TN. Our measurements indicate that dispersions of the relativistic Jeff=1/2 and 3/2 bands exhibit an unusual dichotomy in their behavior through the Neel transition. Although the charge g… ▽ More We employ molecular beam epitaxy to stabilize Ba2IrO4 thin films and utilize in situ angle-resolved photoemission spectroscopy to investigate the evolution of its electronic structure through the Neel temperature TN. Our measurements indicate that dispersions of the relativistic Jeff=1/2 and 3/2 bands exhibit an unusual dichotomy in their behavior through the Neel transition. Although the charge gap survives into the paramagnetic state, only the Jeff=1/2 state exhibits a strong temperature dependence and its gap softens with increasing temperature approaching TN, while the nearly fully occupied Jeff=3/2 state which remains nearby in energy exhibits negligible changes with temperature. △ Less

Submitted 27 August, 2014; originally announced August 2014.

Comments: 18 pages, 8 figures

Journal ref: Phys. Rev. B 90, 075142 (2014)