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Spin-orbit coupling in digital alloyed InGaAs quantum wells
Authors:
Jason T. Dong,
Yilmaz Gul,
Irene Villar Rodriguez,
Aaron N. Engel,
Connor P. Dempsey,
Stuart N. Holmes,
Michael Pepper,
Christopher J. Palmstrøm
Abstract:
Increasing the spin-orbit coupling in InGaAs quantum wells is desirable for applications involving spintronics and topological quantum computing. Digital alloying is an approach towards growing ternary quantum wells that enables asymmetric interfaces and compositional grading in the quantum well, which can potentially modify the spin-orbit coupling in the quantum well. The spin-orbit coupling of t…
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Increasing the spin-orbit coupling in InGaAs quantum wells is desirable for applications involving spintronics and topological quantum computing. Digital alloying is an approach towards growing ternary quantum wells that enables asymmetric interfaces and compositional grading in the quantum well, which can potentially modify the spin-orbit coupling in the quantum well. The spin-orbit coupling of the quantum wells is extracted from beating patterns in the low magnetic field magnetoresistance. Digital alloying is found to modify the spin-orbit coupling by up to 138 meV\textnormalÅ. The changes induced in the spin-orbit coupling can be qualitatively understood as being due to modifications in the interfacial Rashba spin-orbit coupling.
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Submitted 7 July, 2025;
originally announced July 2025.
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Non-magnetic Fractional Conductance in High Mobility InAs Quantum Point Contacts
Authors:
I. Villar Rodriguez,
Y. Gul,
C. P. Dempsey,
J. T. Dong,
S. N. Holmes,
C. J. Palmstrom,
M. Pepper
Abstract:
In this letter, we report the magneto-electronic properties of high mobility InAs quantum point contacts grown on InP substrates. The 1D conductance reaches a maximum value of 17 plateaus, quantized in units of 2e^2/h, where e is the fundamental unit of charge and h is Planck's constant. The in-plane effective g-factor was estimated to be -10.9 +/- 1.5 for subband N = 1 and -10.8 +/- 1.6 for subba…
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In this letter, we report the magneto-electronic properties of high mobility InAs quantum point contacts grown on InP substrates. The 1D conductance reaches a maximum value of 17 plateaus, quantized in units of 2e^2/h, where e is the fundamental unit of charge and h is Planck's constant. The in-plane effective g-factor was estimated to be -10.9 +/- 1.5 for subband N = 1 and -10.8 +/- 1.6 for subband N = 2. Furthermore, a study of the non-magnetic fractional conductance states at 0.2 (e^2/h) and 0.1(e2/h is provided. While their origin remains under discussion, evidence suggests that they arise from strong electron-electron interactions and momentum-conserving backscattering between electrons in two distinct channels within the 1D region. This phenomenon may also be interpreted as an entanglement between the two channel directions facilitated by momentum-conserving backscattering.
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Submitted 11 March, 2025;
originally announced March 2025.
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Effects of Strain Compensation on Electron Mobilities in InAs Quantum Wells Grown on InP(001)
Authors:
C. P. Dempsey,
J. T. Dong,
I. Villar Rodriguez,
Y. Gul,
S. Chatterjee,
M. Pendharkar,
S. N. Holmes,
M. Pepper,
C. J. Palmstrøm
Abstract:
InAs quantum wells (QWs) grown on InP substrates are interesting for their applications in devices with high spin-orbit coupling (SOC) and their potential role in creating topologically nontrivial hybrid heterostructures. These QWs rely on InGaAs cladding layers and InAlAs barrier layers to confine electrons within a thin InAs well. The highest mobility QWs are limited by interfacial roughness sca…
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InAs quantum wells (QWs) grown on InP substrates are interesting for their applications in devices with high spin-orbit coupling (SOC) and their potential role in creating topologically nontrivial hybrid heterostructures. These QWs rely on InGaAs cladding layers and InAlAs barrier layers to confine electrons within a thin InAs well. The highest mobility QWs are limited by interfacial roughness scattering and alloy disorder scattering in the cladding and buffer layers. Increasing QW thickness has been shown to reduce the effect of both of these scattering mechanisms. However, for current state-of-the-art devices with As-based cladding and barrier layers, the critical thickness is limited to $\leq7$ nm. In this report, we demonstrate the use of strain compensation techniques in the In$_x$Ga$_{1-x}$As cladding layers, grown on In$_{0.81}$Al$_{0.19}$As barrier layers, to extend the critical thickness well beyond this limit. We induce tensile strain in the InGaAs cladding layers by reducing the In concentration from In$_{0.81}$Ga$_{0.19}$As to In$_{0.70}$Ga$_{0.30}$As and we observe changes in both the critical thickness of the well and the maximum achievable mobility. The peak electron mobility at 2 K is $1.16\times10^6$ cm$^2/$Vs, with a carrier density of $4.2\times10^{11}$ /cm$^2$. Additionally, we study the quantum lifetime and Rashba spin splitting in the highest mobility device as these parameters are critical to determine if these structures can be used in topologically nontrivial devices.
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Submitted 16 March, 2025; v1 submitted 27 June, 2024;
originally announced June 2024.
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Enhanced mobility of ternary InGaAs quantum wells through digital alloying
Authors:
Jason T. Dong,
Yilmaz Gul,
Aaron N. Engel,
Teun A. J. van Schijndel,
Connor P. Dempsey,
Michael Pepper,
Christopher J. Palmstrøm
Abstract:
High In content InGaAs quantum wells (In $\geq$ 75%) are potentially useful for topological quantum computing and spintronics applications. In high mobility InGaAs quantum wells, alloy disorder scattering is a limiting factor. In this report, we demonstrate that by growing the InGaAs quantum wells as a digital alloy, or a short period superlattice, we can reduce the alloy disorder scattering withi…
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High In content InGaAs quantum wells (In $\geq$ 75%) are potentially useful for topological quantum computing and spintronics applications. In high mobility InGaAs quantum wells, alloy disorder scattering is a limiting factor. In this report, we demonstrate that by growing the InGaAs quantum wells as a digital alloy, or a short period superlattice, we can reduce the alloy disorder scattering within the quantum well and increase the peak 2 K electron mobility to 545,000 cm^2/V s, which is the highest reported mobility for high In content InGaAs quantum wells to the best of the authors' knowledge. Our results demonstrate that the digital alloy approach can be used to increase the mobility of quantum wells in random alloy ternary materials.
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Submitted 29 March, 2024; v1 submitted 25 March, 2024;
originally announced March 2024.
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Experimental evidence for topological phases in the magnetoconductance of 2DEG-based hybrid junctions
Authors:
Kaveh Delfanazari,
Llorenc Serra,
Pengcheng Ma,
Reuben K. Puddy,
Teng Yi,
Moda Cao,
Yilmaz Gul,
Ian Farrer,
David A. Ritchie,
Hannah J. Joyce,
Michael J. Kelly,
Charles G. Smith
Abstract:
While the application of out-of-plane magnetic fields was, so far, believed to be detrimental for the formation of Majorana phases in artificially engineered hybrid superconducting-semiconducting junctions, several recent theoretical studies have found it indeed useful in establishing such topological phases 1-5. Majorana phases emerge as quantized plateaus in the magnetoconductance of the hybrid…
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While the application of out-of-plane magnetic fields was, so far, believed to be detrimental for the formation of Majorana phases in artificially engineered hybrid superconducting-semiconducting junctions, several recent theoretical studies have found it indeed useful in establishing such topological phases 1-5. Majorana phases emerge as quantized plateaus in the magnetoconductance of the hybrid junctions based on two-dimensional electron gases (2DEG) under fully out-of-plane magnetic fields. The large transverse Rashba spin-orbit interaction in 2DEG, together with a strong magneto-orbital effect, yield topological phase transitions to nontrivial phases hosting Majorana modes. Such Majorana modes are formed at the ends of 2DEG-based wires with a hybrid superconductor-semiconductor integrity. Here, we report on the experimental observation of such topological phases in Josephson junctions, based on In0.75Ga0.25As 2DEG, by sweeping out-of-plane magnetic fields of as small as 0 < B(mT) < 100 and probing the conductance to highlight the characteristic quantized magnetoconductance plateaus. Our approaches towards (i) creation and detection of topological phases in small out-of-plane magnetic fields, and (ii) integration of an array of topological Josephson junctions on a single chip pave the ways for the development of scalable quantum integrated circuits for their potential applications in fault-tolerant quantum processing and computing.
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Submitted 8 August, 2020; v1 submitted 4 July, 2020;
originally announced July 2020.
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Zero-Magnetic Field Fractional Quantum States
Authors:
S. Kumar,
M. Pepper,
S. N. Holmes,
H. Montagu,
Y. Gul,
D. A. Ritchie,
I. Farrer
Abstract:
Since the discovery of the Fractional Quantum Hall Effect in 1982 there has been considerable theoretical discussion on the possibility of fractional quantization of conductance in the absence of Landau levels formed by a quantizing magnetic field. Although various situations have been theoretically envisaged, particularly lattice models in which band flattening resembles Landau levels, the predic…
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Since the discovery of the Fractional Quantum Hall Effect in 1982 there has been considerable theoretical discussion on the possibility of fractional quantization of conductance in the absence of Landau levels formed by a quantizing magnetic field. Although various situations have been theoretically envisaged, particularly lattice models in which band flattening resembles Landau levels, the predicted fractions have never been observed. In this Letter, we show that odd and even denominator fractions can be observed, and manipulated, in the absence of a quantizing magnetic field, when a low-density electron system in a GaAs based one-dimensional quantum wire is allowed to relax in the second dimension. It is suggested that such a relaxation results in formation of a zig-zag array of electrons with ring paths which establish a cyclic current and a resultant lowering of energy. The behavior has been observed for both symmetric and asymmetric confinement but increasing the asymmetry of the confinement potential, to result in a flattening of confinement, enhances the appearance of new fractional states. We find that an in-plane magnetic field induces new even denominator fractions possibly indicative of electron pairing. The new quantum states described here have implications both for the physics of low dimensional electron systems and also for quantum technologies. This work will enable further development of structures which are designed to electrostatically manipulate the electrons for the formation of particular configurations. In turn, this could result in a designer tailoring of fractional states to amplify particular properties of importance in future quantum computation.
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Submitted 23 October, 2018;
originally announced October 2018.
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Self-Organised Fractional Quantisation in a Hole Quantum Wire
Authors:
Y. Gul,
S. N. Holmes,
M. Myronov,
S. Kumar,
M. Pepper
Abstract:
We have investigated hole transport in one-dimensional quantum wires in strained germanium two-dimensional layers. The ballistic conductance characteristics show the regular quantised plateaux in units of n2e2/h, where n is an integer. Additionally, new quantised levels are formed which correspond to values of n = 1/4 reducing to 1/8 in the presence of a strong parallel magnetic field which lifts…
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We have investigated hole transport in one-dimensional quantum wires in strained germanium two-dimensional layers. The ballistic conductance characteristics show the regular quantised plateaux in units of n2e2/h, where n is an integer. Additionally, new quantised levels are formed which correspond to values of n = 1/4 reducing to 1/8 in the presence of a strong parallel magnetic field which lifts the spin degeneracy but does not quantise the wavefunction. A further plateau is observed corresponding to n = 1/32 which does not change in the presence of a parallel magnetic field. These values indicate that the system is behaving as if charge was fractionalised with values e/2 and e/4, possible mechanisms are discussed.
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Submitted 14 February, 2018;
originally announced February 2018.
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Two-Frequency Jahn-Teller Systems in Circuit QED
Authors:
Tekin Dereli,
Yusuf Gül,
Pol Forn-Díaz,
Özgür E. Müstecaplioğlu
Abstract:
We investigate the simulation of Jahn-Teller models with two non-degenerate vibrational modes using a circuit QED architecture. Typical Jahn-Teller systems are anisotropic and require at least a two-frequency description. The proposed simulator consists of two superconducting lumped-element resonators interacting with a common flux qubit in the ultrastrong coupling regime. We translate the circuit…
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We investigate the simulation of Jahn-Teller models with two non-degenerate vibrational modes using a circuit QED architecture. Typical Jahn-Teller systems are anisotropic and require at least a two-frequency description. The proposed simulator consists of two superconducting lumped-element resonators interacting with a common flux qubit in the ultrastrong coupling regime. We translate the circuit QED model of the system to a two-frequency Jahn-Teller Hamiltonian and calculate its energy eigenvalues and the emission spectrum of the cavities. It is shown that the system can be systematically tuned to an effective single mode Hamiltonian from the two-mode model by varying the coupling strength between the resonators. The flexibility in manipulating the parameters of the circuit QED simulator permits isolating the effective single frequency and pure two-frequency effects in the spectral response of Jahn-Teller systems.
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Submitted 27 March, 2012; v1 submitted 6 September, 2011;
originally announced September 2011.