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Photon Momentum Enabled Symmetry Breaking and Nonlinear Photocurrents in the Centrosymmetric Dirac Semimetal PdTe
Authors:
Sambhu G Nath,
Subhadip Manna,
R K Gopal,
Chiranjib Mitra
Abstract:
In centrosymmetric Dirac semimetals, second order nonlinear photocurrents are forbidden by the coexistence of time-reversal and inversion symmetries. Here, we demonstrate that finite photon momentum transfer acts as a dynamic symmetry breaking mechanism in PdTe, enabling nonlinear optical responses that are nominally forbidden in the centrosymmetric bulk. Through polarization sensitive measurement…
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In centrosymmetric Dirac semimetals, second order nonlinear photocurrents are forbidden by the coexistence of time-reversal and inversion symmetries. Here, we demonstrate that finite photon momentum transfer acts as a dynamic symmetry breaking mechanism in PdTe, enabling nonlinear optical responses that are nominally forbidden in the centrosymmetric bulk. Through polarization sensitive measurements, we resolve distinct contributions from the circular photogalvanic effect (CPGE), geometric shift currents, and photon drag mediated processes. We show that the helicity dependent current vanishes at normal incidence and reverses sign with the angle of incidence, reflecting the coupling between photons and spin polarized surface states. Crucially, thickness dependent analysis reveals that the helicity dependent photocurrent component C scales with film thickness, establishing a robust bulk contribution enabled by momentum transfer. This confirms that incident photons provide the directional axis required to probe interband quantum geometry, rather than the response originating solely from surface states or strain. Our results demonstrate that optical excitation can dynamically reduce the effective symmetry of the system, enabling access to quantum geometric tensors and establishing PdTe as a promising platform for exploring nonequilibrium dynamics governed by photon momentum in high symmetry topological materials.
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Submitted 11 May, 2026;
originally announced May 2026.
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Magnetoconductance evolution across the topological-trivial phase transition in ${In_{x}}({Bi_{0.3}}{Sb_{0.7}})_{2-x}{Te_3}$ thin films
Authors:
Sambhu G Nath,
Subhadip Manna,
Kanav Sharma,
Amar Verma,
Ritam Banerjee,
R K Gopal,
Chiranjib Mitra
Abstract:
We investigate the evolution of electronic transport across the topological-trivial phase transition in ${\rm In}_{x}({\rm Bi}_{0.3}{\rm Sb}_{0.7})_{2-x}{\rm Te}_3$ thin films by systematically tuning the indium concentration $x$. Increasing $x$ reduces the effective spin-orbit coupling, driving a topological quantum phase transition near $x \approx 7\%$, and at higher disorder a crossover from di…
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We investigate the evolution of electronic transport across the topological-trivial phase transition in ${\rm In}_{x}({\rm Bi}_{0.3}{\rm Sb}_{0.7})_{2-x}{\rm Te}_3$ thin films by systematically tuning the indium concentration $x$. Increasing $x$ reduces the effective spin-orbit coupling, driving a topological quantum phase transition near $x \approx 7\%$, and at higher disorder a crossover from diffusive to strongly localized transport around $x \approx 15\%$. In the diffusive regime, the magnetoconductance is well described by the Hikami-Larkin-Nagaoka formalism, with the evolution of the WAL prefactor $α$ correlating with the band-inversion transition. Beyond the diffusive limit, transport crosses into variable-range hopping, accompanied by a striking reversal of magnetoconductance from negative to positive. The observed positive low-field magnetoconductance, its pronounced anisotropy, and its temperature evolution point to an orbital origin of the response. These features are naturally captured by incorporating the incoherent hopping mechanism of Raikh \textit{et al.} together with wavefunction shrinkage, rather than by conventional quantum-correction frameworks. Our results provide a unified picture of how topology, spin-orbit coupling, and disorder collectively determine the full field-temperature magnetotransport landscape in this material class, establishing a clear experimental link between the topological phase transition and the onset of incoherent hopping-dominated conduction.
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Submitted 17 December, 2025;
originally announced December 2025.
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Ultrafast Dynamics of Spin-Orbit Entangled Excitons Coupled to Magnetic Ordering in van der Waals Antiferromagnet NiPS3
Authors:
Sidhanta Sahu,
Anupama Chauhan,
Poulami Ghosh,
Sayan Routh,
Ruturaj Puranik,
Setti Thirupathaiah,
Siddhartha Lal,
Shriganesh Prabhu S,
Chiranjib Mitra,
N. Kamaraju
Abstract:
Spin-orbit entangled excitons (SOEE) in two-dimensional (2D) antiferromagnets provide direct access to explore unconventional many body interactions in correlated electron systems. In this work, we carry out a detailed investigation using non-degenerate isotropic and anisotropic pump-probe reflection spectroscopy to probe the ultrafast dynamics of SOEE and their coupling to spin fluctuations in Ni…
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Spin-orbit entangled excitons (SOEE) in two-dimensional (2D) antiferromagnets provide direct access to explore unconventional many body interactions in correlated electron systems. In this work, we carry out a detailed investigation using non-degenerate isotropic and anisotropic pump-probe reflection spectroscopy to probe the ultrafast dynamics of SOEE and their coupling to spin fluctuations in NiPS3. Transient reflectivity data reveals acoustic phonon oscillations at ~ 27 GHz, along with two distinct relaxation timescales: fast (1-9 ps) and slower components (1-4 ns) associated with SOEE coherence and spin reordering, respectively. Both timescales exhibit pronounced temperature dependence near the exciton dissociation (TED = 120 K) and Neel (TN = 155 K) temperatures. The SOEE coherence shortens from ~ 8-9 ps at T < TED to ~ 3 ps at T > TED with a finite tail persisting beyond TN. The spin reordering time grows near 120 K, and shows critical slowing down around TN. Pump fluence studies further corroborate their spin origin. Our findings uncover the direct interplay between the excitonic and spin degrees of freedom across ultrafast and longer timescales, offering new opportunities to probe and engineer emergent many-body interactions in 2D antiferromagnets.
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Submitted 14 December, 2025; v1 submitted 5 September, 2025;
originally announced September 2025.
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Band Meandering due to Charged Impurity Effects and Carrier Transport in Ternary Topological Insulators
Authors:
Kanav Sharma,
Niranjay K R,
Infan S Mesh,
Radha Krishna Gopal,
Chiranjib Mitra
Abstract:
Controlling charged impurity disorder is a critical challenge for realizing the promise of topological insulator (TI) surfaces in devices. While doping is often used to tune the chemical potential, its impact on the fundamental disorder landscape remains poorly understood. Here, we investigate this effect in ternary (Bi,Sb)$_2$Te$_3$ (BST) thin films and their indium-doped (IBST) counterparts. Gat…
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Controlling charged impurity disorder is a critical challenge for realizing the promise of topological insulator (TI) surfaces in devices. While doping is often used to tune the chemical potential, its impact on the fundamental disorder landscape remains poorly understood. Here, we investigate this effect in ternary (Bi,Sb)$_2$Te$_3$ (BST) thin films and their indium-doped (IBST) counterparts. Gate-dependent transport reveals that indium doping increases charged impurity density by an order of magnitude, which in turn reduces the characteristic size of disorder-induced charge puddles from $\sim$91 nm to $\sim$38 nm. This amplified disorder enhances Coulomb scattering and suppresses field-effect mobility, directly demonstrating how doping-induced compensation degrades surface transport. Our work establishes doping as a powerful method to probe the limits of topological protection and underscores that defect suppression, not just compensation, is essential for developing high-performance TI devices.
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Submitted 15 December, 2025; v1 submitted 11 July, 2025;
originally announced July 2025.
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Ultrafast dynamics of carriers, coherent acoustic phonons and strain pulses in BiSbTe1.5Se1.5 topological insulator thin films
Authors:
Anupama Chauhan,
Sidhanta Sahu,
Poulami Ghosh,
Dheerendra Singh,
Sambhu G Nath,
Anjan Kumar N M,
P. K. Panigrahi,
Chiranjib Mitra,
N. Kamaraju
Abstract:
We Investigate the ultrafast carrier, coherent acoustic phonons (CAPs), and acoustic strain pulse dynamics in topological insulator BiSbTe1.5Se1.5 (BSTS) thin films of varying thickness using degenerate pump-probe reflection spectroscopy. Here, Sapphire has been chosen as the main substrate due to its maximum acoustic reflectivity at the BSTS-sapphire interface compared to BSTS-GaAs, BSTS-Si, and…
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We Investigate the ultrafast carrier, coherent acoustic phonons (CAPs), and acoustic strain pulse dynamics in topological insulator BiSbTe1.5Se1.5 (BSTS) thin films of varying thickness using degenerate pump-probe reflection spectroscopy. Here, Sapphire has been chosen as the main substrate due to its maximum acoustic reflectivity at the BSTS-sapphire interface compared to BSTS-GaAs, BSTS-Si, and BSTS-MgO interfaces. For the films with thickness more than twice the penetration depth, the transient reflectivity data predominantly exhibits travelling acoustic strain pulses (TASP) on the top of single-exponential electronic decay (~ 2 ps). In contrast, films with thickness less than penetration depth are dominated by CAPs and a bi exponential electronic background with decay times of ~ 2 ps and ~ 260-380 ps. The observed TASP dynamics are well-described by a theoretical acoustic strain model. Further, to elucidate the underlying physical mechanisms governing the behavior of photo-excited carriers, CAPs, and strain pulses, we performed carrier density and temperature-dependent (7-294 K) studies on BSTS films with thicknesses of 22 nm and 192 nm. In the 22 nm film, the both fast and slow decay processes increase with carrier density at room temperature but decrease with temperature at a carrier density of 1.7*10^{19} cm^{-3}. A detailed analysis suggests that the faster decay arises from electron-phonon scattering and carrier diffusion, while the slower decay likely results from defect-assisted and phonon-assisted recombination. Furthermore, increasing the sample temperature leads to anharmonic decay induced softening of ~ 14 % in the phonon frequency and an anomalous ~ 48 % decrease in the phonon damping parameter due to reduced Dirac surface electron and acoustic phonon scattering.
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Submitted 3 March, 2025;
originally announced March 2025.
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Experimental realization of a SU(3) color-orbit coupling in an ultracold gas
Authors:
Chetan S. Madasu,
Chirantan Mitra,
Lucas Gabardos,
Ketan D. Rathod,
Thomas Zanon-Willette,
Christian Miniatura,
Frederic Chevy,
Chi Kwong,
David Wilkowski
Abstract:
Spin-orbit interaction couples the spin of a particle to its motion and leads to spin-induced transport phenomena such as spin-Hall effects and Chern insulators. In this work, we extend the concept of internal-external state coupling to higher internal symmetry, exploring features beyond the established spin-orbit regime. We couple suitable resonant laser beams to a gas of ultracold atoms, thereby…
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Spin-orbit interaction couples the spin of a particle to its motion and leads to spin-induced transport phenomena such as spin-Hall effects and Chern insulators. In this work, we extend the concept of internal-external state coupling to higher internal symmetry, exploring features beyond the established spin-orbit regime. We couple suitable resonant laser beams to a gas of ultracold atoms, thereby inducing artificial SU(3) non-Abelian gauge fields that act on a degenerate ground state manifold comprised of three dark states. We demonstrate the inherent all-state connectivity of SU(3) systems by performing targeted geometric transformations. Then, we investigate color-orbit coupling, an extension of SU(2) spin-orbit coupling to SU(3) systems. We reveal a rich dynamical interplay between three distinct oscillation frequencies, which possesses interesting analogies with neutrino oscillations and quark mixing mechanisms. In the future, the system should provide a testbed for exploring topological properties of SU(3) systems.
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Submitted 14 October, 2025; v1 submitted 7 February, 2025;
originally announced February 2025.
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Optimizing defect states in $(Bi_{0.3}Sb_{0.7})_{2}Te_{3}$ ternary topological insulators using indium doping
Authors:
Kanav Sharma,
Ritam Banerjee,
Anuvab Nandi,
Radha Krishna Gopal,
Chiranjib Mitra
Abstract:
This study investigates the influence of indium doping on the defect states in (Bi0.3Sb0.7)2Te3 (BST) ternary topological insulators. Thin (10 nm) and thick (60 nm) films of pristine BST and indium-doped BST (In0.14(Bi0.3Sb0.7)1.86Te3) were synthesized using pulsed laser deposition. The electronic properties were characterized through low-frequency noise spectroscopy and temperature-dependent resi…
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This study investigates the influence of indium doping on the defect states in (Bi0.3Sb0.7)2Te3 (BST) ternary topological insulators. Thin (10 nm) and thick (60 nm) films of pristine BST and indium-doped BST (In0.14(Bi0.3Sb0.7)1.86Te3) were synthesized using pulsed laser deposition. The electronic properties were characterized through low-frequency noise spectroscopy and temperature-dependent resistance (R-T) measurements. For the 10 nm films, R-T analysis revealed that indium doping shifts the thermal activation energy by approximately 100 meV. This doping also suppresses a shallow impurity band at 72 meV, a finding corroborated by 1/f noise measurements. In the 60 nm films, noise spectroscopy was used to probe deep defect states, where indium doping was found to increase the activation energy from 292.3 meV to 392 meV -- a consistent shift of 100 meV. These findings demonstrate that indium doping is an effective method for systematically modifying both shallow and deep defect states, enhancing the insulating properties and offering a mechanism to engineer the electronic behavior of topological insulators for advanced electronic applications where noise reduction is crucial.
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Submitted 11 August, 2025; v1 submitted 8 October, 2024;
originally announced October 2024.
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Investigation of magnetic order influenced phonon and electron dynamics in MnBi$_{2}$Te$_{4}$ and Sb doped MnBi$_{2}$Te$_{4}$ through terahertz time-domain spectroscopy
Authors:
Soumya Mukherjee,
Anjan Kumar NM,
Subhadip Manna,
Sambhu G Nath,
Radha Krishna Gopal,
Chiranjib Mitra,
N. Kamaraju
Abstract:
MnBi$_{2}$Te$_{4}$, the first topological insulator with inherent magnetic ordering, has attracted significant attention recently for providing a platform to realize several exotic quantum phenomena at relatively higher temperatures. In this work, we have carried out an exhaustive investigation of MnBi$_{2}$Te$_{4}$ and Sb doped MnBi$_{2}$Te$_{4}$ thin films using THz time-domain spectroscopy. The…
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MnBi$_{2}$Te$_{4}$, the first topological insulator with inherent magnetic ordering, has attracted significant attention recently for providing a platform to realize several exotic quantum phenomena at relatively higher temperatures. In this work, we have carried out an exhaustive investigation of MnBi$_{2}$Te$_{4}$ and Sb doped MnBi$_{2}$Te$_{4}$ thin films using THz time-domain spectroscopy. The extracted real THz conductivity displays a strong IR active E$_u$ phonon absorption peak (at $\sim$1.5 THz) merged on top of the Drude-like contributions from bulk and surface electrons. The extracted parameters from the THz conductivity data fitted to the Drude-Fano-Lorentz model, show significant changes in their temperature dependence around the magnetic ordering Néel temperature of $\sim$ 25K, which is suggestive of the coupling between magnetic ordering and electronic band structure. The frequency of the E$_u$ phonon displays an anomalous blue-shift with increasing temperatures by $\sim$ 0.1 THz ($\sim$7 %) for MnBi$_{2}$Te$_{4}$ and $\sim$0.2 THz ($\sim$13 %) for Sb doped MnBi$_{2}$Te$_{4}$ between 7K and 250K. The line-shape of the E$_u$ phonon mode in Sb doped MnBi$_{2}$Te$_{4}$ shows significant Fano asymmetry compared to that of MnBi$_{2}$Te$_{4}$, indicating that Sb doping plays an important role in the Fano interference between the phonons and the electrons, in this system. These results indicate that the anomalous phonon behaviour seen in MBT arise mainly from positive cubic anharmonicity induced self energy parameter, whereas both anharmonicity and the electron phonon coupling are at play in making the relatively higher anomalous blue shift of phonons in MBST. Our studies provide the first comprehensive understanding of the phonon and electron dynamics of MnBi$_{2}$Te$_{4}$ and Sb doped MnBi$_{2}$Te$_{4}$ in the THz range using time-domain THz spectroscopy.
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Submitted 18 March, 2024;
originally announced March 2024.
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Anisotropic magneto-photothermal voltage in Sb2Te3 topological insulator thin films
Authors:
Subhadip Manna,
Sambhu G Nath,
Samrat Roy,
Soumik Aon,
Sayani Pal,
Kanav Sharma,
Dhananjaya Mahapatra,
Partha Mitra,
Sourin Das,
Bipul Pal,
Chiranjib Mitra
Abstract:
We studied longitudinal and Hall photothermal voltages under a planar magnetic field scan in epitaxial thin films of the Topological Insulator (TI) Sb2Te3, grown using pulsed laser deposition (PLD). Unlike prior research that utilised polarised light-induced photocurrent to investigate the TI, our study introduces advancements based on unpolarized light-induced local heating. This method yields a…
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We studied longitudinal and Hall photothermal voltages under a planar magnetic field scan in epitaxial thin films of the Topological Insulator (TI) Sb2Te3, grown using pulsed laser deposition (PLD). Unlike prior research that utilised polarised light-induced photocurrent to investigate the TI, our study introduces advancements based on unpolarized light-induced local heating. This method yields a thermoelectric response exhibiting a direct signature of strong spin-orbit coupling. Our analysis reveals three distinct contributions when fitting the photothermal voltage data to the angular dependence of the planar magnetic field. The interaction between the applied magnetic field and the thermal gradient on the bulk band orbitals enables the differentiation between the ordinary Nernst effect from the out-of-plane thermal gradient and an extraordinary magneto-thermal contribution from the planar thermal gradient. The fitting of our data to theoretical models indicates that these effects primarily arise from the bulk states of the TI rather than the surface states. These findings highlight PLD-grown epitaxial topological insulator thin films as promising candidates for optoelectronic devices, including sensors and actuators. Such devices offer controllable responses through position-dependent, non-invasive local heating via focused incident light and variations in the applied magnetic field direction.
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Submitted 15 March, 2024;
originally announced March 2024.
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Enhancement of spin to charge conversion efficiency at the topological surface state by inserting normal metal spacer layer in the topological insulator based heterostructure
Authors:
Sayani Pal,
Anuvab Nandi,
Shambhu G. Nath,
Pratap Kumar Pal,
Kanav Sharma,
Subhadip Manna,
Anjan Barman,
Chiranjib Mitra
Abstract:
We report efficient spin to charge conversion (SCC) in the topological insulator (TI) based heterostructure ($BiSbTe_{1.5}Se_{1.5}/Cu/Ni_{80}Fe_{20}$) by using spin-pumping technique where $BiSbTe_{1.5}Se_{1.5}$ is the TI and $Ni_{80}Fe_{20}$ is the ferromagnetic layer. The SCC, characterized by inverse Edelstein effect length ($λ_{IEE}$) in the TI material gets altered with an intervening Copper…
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We report efficient spin to charge conversion (SCC) in the topological insulator (TI) based heterostructure ($BiSbTe_{1.5}Se_{1.5}/Cu/Ni_{80}Fe_{20}$) by using spin-pumping technique where $BiSbTe_{1.5}Se_{1.5}$ is the TI and $Ni_{80}Fe_{20}$ is the ferromagnetic layer. The SCC, characterized by inverse Edelstein effect length ($λ_{IEE}$) in the TI material gets altered with an intervening Copper (Cu) layer and it depends on the interlayer thickness. The introduction of Cu layer at the interface of TI and ferromagnetic metal (FM) provides a new degree of freedom for tuning the SCC efficiency of the topological surface states. The significant enhancement of the measured spin-pumping voltage and the linewidth of ferromagnetic resonance (FMR) absorption spectra due to the insertion of Cu layer at the interface indicates a reduction in spin memory loss at the interface that resulted from the presence of exchange coupling between the surface states of TI and the local moments of ferromagnetic metal. The temperature dependence (from 8K to 300K) of the evaluated $λ_{IEE}$ data for all the trilayer systems, TI/Cu/FM with different Cu thickness confirms the effect of exchange coupling between the TI and FM layer on the spin to charge conversion efficiency of the topological surface state.
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Submitted 17 November, 2023;
originally announced November 2023.
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Modulating Spin Current Induced Effective Damping in $β-W/Py$ Heterostructures by a Systematic Variation in Resistivity of the Sputtered Deposited $β-W$ films
Authors:
Soumik Aon,
Sayani Pal,
Subhadip Manna,
Chiranjib Mitra,
Partha Mitra
Abstract:
Utilizing the spin-induced pumping from a ferromagnet (FM) into a heavy metal (HM) under the ferromagnetic resonance (FMR) condition, we report an enhancement in effective damping in $β$- W/Py bilayers by systematically varying resistivity ($ρ_{W}$) of $β$-W films. Different resistivity ranging from 100 $μΩ$-cm to 1400 $μΩ$-cm with a thickness of 8 nm can be achieved by varying the argon pressure…
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Utilizing the spin-induced pumping from a ferromagnet (FM) into a heavy metal (HM) under the ferromagnetic resonance (FMR) condition, we report an enhancement in effective damping in $β$- W/Py bilayers by systematically varying resistivity ($ρ_{W}$) of $β$-W films. Different resistivity ranging from 100 $μΩ$-cm to 1400 $μΩ$-cm with a thickness of 8 nm can be achieved by varying the argon pressure ($P_{Ar}$) during the growth by the method of sputtering. The coefficient of effective damping $α_{eff}$ is observed to increase from 0.010 to 0.025 with $ρ_{W}$, which can be modulated by $P_{Ar}$. We observe a modest dependence of $α_{eff}$ on the sputtering power ($p_{S}$) while keeping the $P_{Ar}$ constant. $α_{eff}$ dependence on both $P_{Ar}$ and $p_{S}$ suggests that there exists a strong correlation between $α_{eff}$ and $ρ_{W}$. It is thus possible to utilize $ρ_{W}$ as a tuning parameter to regulate the $α_{eff}$, which can be advantageous for faster magnetization dynamics switching. The thickness dependence study of Py in the aforementioned bilayers manifests a higher spin mixing conductance ($g^{\uparrow\downarrow}_{eff}$) which suggests a strong spin pumping from Py into the $β$-W layer. The effective spin current ($J_{S(eff)}$) is also evaluated by considering the spin-back flow in this process. Intrinsic spin mixing conductance ($g^{\uparrow\downarrow}_{W}$) and spin diffusion length ($λ_{SD}$) of $β$-W are additionally investigated using thickness variations in $β$-W. Furthermore, the low-temperature study in $β$-W/Py reveals an intriguing temperature dependence in $α_{eff}$ which is quite different from $α_{b}$ of single Py layer and the enhancement in $α_{eff}$ at low temperature can be attributed to the spin-induced pumping from Py layer into $β$-W.
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Submitted 5 August, 2023;
originally announced August 2023.
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Experimental investigation of the effect of topological insulator on the magnetization dynamics of ferromagnetic metal: $BiSbTe_{1.5}Se_{1.5}$ and $Ni_{80}Fe_{20}$ heterostructure
Authors:
Sayani Pal,
Soumik Aon,
Subhadip Manna,
Sambhu G Nath,
Kanav Sharma,
Chiranjib Mitra
Abstract:
We have studied ferromagnetic metal/topological insulator bilayer system to understand magnetization dynamics of ferromagnetic metal (FM) in contact with a topological insulator (TI). At magnetic resonance condition, the precessing magnetization in the metallic ferromagnet ($Ni_{80}Fe_{20}$) injects spin current into the topological insulator ($BiSbTe_{1.5}Se_{1.5}$), a phenomenon known as spin-pu…
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We have studied ferromagnetic metal/topological insulator bilayer system to understand magnetization dynamics of ferromagnetic metal (FM) in contact with a topological insulator (TI). At magnetic resonance condition, the precessing magnetization in the metallic ferromagnet ($Ni_{80}Fe_{20}$) injects spin current into the topological insulator ($BiSbTe_{1.5}Se_{1.5}$), a phenomenon known as spin-pumping. Due to the spin pumping effect, fast relaxation in the ferromagnet results in the broadening of ferromagnetic resonance linewidth ($ΔH$). We evaluated the parameters like effective Gilbert damping coefficient ($α_{eff}$), spin-mixing conductance ($g_{eff}^{\uparrow \downarrow}$) and spin current density ($j_S^0$) to confirm a successful spin injection due to spin-pumping into the $BiSbTe_{1.5}Se_{1.5}$ layer. TIs embody a spin-momentum locked surface state that span the bulk band-gap. It can act differently to the FM magnetization than the other normal metals. To probe the effect of topological surface state, a systematic low temperature study is crucial as surface state of TI dominates at lower temperatures. The exponential growth of $ΔH$ for all different thickness combination of FM/TI bilayers and effective Gilbert damping coefficient ($α_{eff}$) with lowering temperature confirms the prediction that spin chemical bias generated from spin-pumping induces surface current in TI due to spin-momentum locking. The hump-like feature of magnetic anisotropy field ($H_K$)of the bilayer around 60K suggests that the decrease of interfacial in-plane magnetic anisotropy can result from exchange coupling between the TI surface state and the local moments of FM layer.
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Submitted 24 November, 2023; v1 submitted 13 March, 2023;
originally announced March 2023.
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A short-circuited coplanar waveguide for low-temperature single-port ferromagnetic resonance spectroscopy set-up to probe the magnetic properties of ferromagnetic thin films
Authors:
Sayani Pal,
Soumik Aon,
Subhadip Manna,
Chiranjib Mitra
Abstract:
A coplanar waveguide shorted in one end is proposed, designed, and implemented successfully to measure the properties of magnetic thin films as a part of the vector network analyzer ferromagnetic resonance (VNA-FMR) spectroscopy set-up. Its simple structure, potential applications and easy installation inside the cryostat chamber made it advantageous especially for low-temperature measurements. It…
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A coplanar waveguide shorted in one end is proposed, designed, and implemented successfully to measure the properties of magnetic thin films as a part of the vector network analyzer ferromagnetic resonance (VNA-FMR) spectroscopy set-up. Its simple structure, potential applications and easy installation inside the cryostat chamber made it advantageous especially for low-temperature measurements. It provides a wide band of frequencies in the gigahertz range essential for FMR measurements. Our spectroscopy set-up with short-circuited coplanar waveguide has been used to extract Gilbert damping coefficient and effective magnetization values for standard ferromagnetic thin films like Py and Co. The thickness and temperature dependent studies of those magnetic parameters have also been done here for the afore mentioned magnetic samples.
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Submitted 19 July, 2022; v1 submitted 22 April, 2022;
originally announced April 2022.
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Controlling helicity-dependent photocurrent in polycrystalline Sb$_2$Te$_2$Se topological insulator thin films at ambient temperature through wave-vector of and photothermal gradient due to polarized light
Authors:
Samrat Roy,
Subhadip Manna,
Chiranjib Mitra,
Bipul Pal
Abstract:
Optical control of helicity-dependent photocurrent in topological insulator Sb$_2$Te$_2$Se has been studied at room temperature on dominantly c-axis oriented granular polycrystalline samples grown by pulsed laser deposition technique. Strong spin-orbit coupling and spin-momentum locking make this system unique for their applications. We observed that photocurrent can be controlled by exciting the…
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Optical control of helicity-dependent photocurrent in topological insulator Sb$_2$Te$_2$Se has been studied at room temperature on dominantly c-axis oriented granular polycrystalline samples grown by pulsed laser deposition technique. Strong spin-orbit coupling and spin-momentum locking make this system unique for their applications. We observed that photocurrent can be controlled by exciting the sample with different circular and linear polarized light, yielding a polarization-dependent current density which can be fitted very well with a theoretical model. Magnitude of the photocurrent is higher even at room temperature, compared to previous reports on other single-crystal topological insulators. Comparison with the theoretical model suggests that photocurrent has different contributions. Study of dependence of photocurrent on the angle of incidence (wave-vector) of the excitation laser beam with respect to the surface normal of the sample helps to identify origins of different terms contributing to the observed photocurrent. Incidence-angle driven helicity switching, which is a very simple and effective technique to control the directional photocurrent, has also been observed in this study. This photocurrent can also be controlled with the help of photothermal gradient generated by the excitation light beam. Enhancement and inversion of this photocurrent in presence of photothermal gradient for light incident on two opposite edges of the sample occur due to selective spin state excitation with two opposite (left and right) circularly polarized light in presence of the unique spin-momentum locked surface states. These observations renders this polycrystalline material to be more important in polarization-dependent photodetection applications as well as for spin-optoelectronics under ambient conditions.
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Submitted 15 February, 2021; v1 submitted 27 October, 2020;
originally announced October 2020.
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Pulsed laser deposition of highly c-axis oriented thin films of BSTS topological insulator
Authors:
Atul Pandey,
Sourabh Singh,
Bishnupada Ghosh,
Subhadip Manna,
Rk Gopal,
Chiranjib Mitra
Abstract:
We report the growth of highly c-axis oriented topological insulator (TI) BiSbTe1.5Se1.5 (BSTS) thin films by pulsed laser deposition (PLD) technique. The various growth parameters such as substrate temperature, Argon pressure in the deposition chamber and target to substrate distance are tuned to obtain the optimized conditions essential for stoichiometric and bulk insulating TI thin films. These…
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We report the growth of highly c-axis oriented topological insulator (TI) BiSbTe1.5Se1.5 (BSTS) thin films by pulsed laser deposition (PLD) technique. The various growth parameters such as substrate temperature, Argon pressure in the deposition chamber and target to substrate distance are tuned to obtain the optimized conditions essential for stoichiometric and bulk insulating TI thin films. These films are highly c-axis oriented and exhibit all the four Raman modes characteristic to the R-3m space group. The quality of the deposited thin films is investigated using X-ray diffraction for crystallinity, Raman spectroscopy for lattice dynamics, morphological studies using scanning electron microscope and compositional analysis using Energy dispersive X-ray spectroscopy. Resistance vs temperature measurements confirm bulk insulating nature of the prepared thin films and magnetoresistance data exhibits the phenomena of weak antilocalization with a large phase coherence length.
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Submitted 17 October, 2019;
originally announced October 2019.
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Site selective synthesis of in situ Ni filled multiwalled carbon nanotubes using Ni(salen) as a catalyst source
Authors:
Joydip Sengupta,
Avijit Jana,
N D Pradeep Singh,
C Mitra,
Chacko Jacob
Abstract:
The synthesis of Ni filled multiwalled carbon nanotubes was performed by atmospheric pressure chemical vapor deposition with propane on Si at 850 C using a simple mixture of Ni(salen), and a conventional photoresist. Analysis of the carbon nanotubes using scanning electron microscopy together with high resolution transmission electron microscopy show that the nanotubes have grown by a tip growth m…
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The synthesis of Ni filled multiwalled carbon nanotubes was performed by atmospheric pressure chemical vapor deposition with propane on Si at 850 C using a simple mixture of Ni(salen), and a conventional photoresist. Analysis of the carbon nanotubes using scanning electron microscopy together with high resolution transmission electron microscopy show that the nanotubes have grown by a tip growth mechanism and exhibit a multi walled structure with partial Ni filling. The high quality of the Ni filled nanotubes is evidenced by Raman spectroscopy. The magnetic properties of Ni filled nanotubes were analyzed using a superconducting quantum interference device which revealed their ferromagnetic behavior with large coercivity. A scalable as well as site selective growth of high quality Ni filled carbon nanotubes is achieved by a simple photolithographic method.
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Submitted 13 August, 2019;
originally announced August 2019.
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Signature of Quantum Entanglement in NH4CuPO4.H2O
Authors:
Tanmoy Chakraborty,
Harkirat Singh,
Chiranjib Mitra
Abstract:
Entangled solid state systems have gained a great deal of attention due to their fruitful applications in modern quantum technologies. Herein, detection of entanglement content from experimental magnetic susceptibility and specific heat data is reported for NH4CuPO4.H2O in its solid state crystalline form. NH4CuPO4.H2O is a prototype of Heisenberg spin 1/2 dimer system. Temperature dependent magne…
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Entangled solid state systems have gained a great deal of attention due to their fruitful applications in modern quantum technologies. Herein, detection of entanglement content from experimental magnetic susceptibility and specific heat data is reported for NH4CuPO4.H2O in its solid state crystalline form. NH4CuPO4.H2O is a prototype of Heisenberg spin 1/2 dimer system. Temperature dependent magnetic susceptibility and specific data are fitted to an isolated dimer model and the exchange coupling constant is determined. Field dependent magnetization isotherms taken at different temperatures are plotted in a three dimensional plot. Subsequently, entanglement is detected both from susceptibility and specific heat through two different entanglement measures; entanglement witness and entanglement of formation. The temperature evolution of entanglement is studied and the critical temperature is determined up to which entanglement exists. Temperature dependent nature of entanglement extracted from susceptibility and specific heat shows good consistency with each other. Moreover, the field dependent entanglement is also investigated.
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Submitted 6 June, 2019;
originally announced June 2019.
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Investigation of Thermodynamic Properties of Cu(NH3)4SO4.H2O, a Heisenberg Spin Chain Compound
Authors:
Tanmoy Chakraborty,
Harkirat Singh,
Dipanjan Chaudhuri,
Hirale S. Jeevan,
Philipp Gegenwart,
Chiranjib Mitra
Abstract:
Detailed experimental investigations of thermal and magnetic properties are presented for Cu(NH3)4SO4.H2O, an ideal uniform Heisenberg spin half chain compound. A comparison of these properties with relevant spin models is also presented. The temperature dependent magnetic susceptibility and specific heat data has been compared with the exact solution for uniform Heisenberg chain model derived by…
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Detailed experimental investigations of thermal and magnetic properties are presented for Cu(NH3)4SO4.H2O, an ideal uniform Heisenberg spin half chain compound. A comparison of these properties with relevant spin models is also presented. The temperature dependent magnetic susceptibility and specific heat data has been compared with the exact solution for uniform Heisenberg chain model derived by means of Bethe ansatz technique. Field dependent isothermal magnetization curves are simulated by Quantum Monte Carlo technique and compared with the corresponding experimental ones. Specific heat as a function of magnetic field (up to 7T) and temperature (down to 2K) is reported. Subsequently, the data are compared with the corresponding theoretical curves for the infinite Heisenberg spin half chain model with J=6K. Moreover, internal energy and entropy are calculated by analyzing the experimental specific heat data. Magnetic field and temperature dependent behavior of entropy and internal energy are in good agreement with the theoretical predictions.
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Submitted 29 December, 2018;
originally announced December 2018.
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Magnetocaloric effect as a signature of quantum level-crossing for a spin-gapped system
Authors:
Tanmoy Chakraborty,
Chiranjib Mitra
Abstract:
Recent research dealing with magnetocaloric effect (MCE) study of antiferromagnetic (AFM) low dimensional spin systems have revealed a number of fascinating ground-state crossover characteristics upon application of external magnetic field. Herein, through MCE investigation we have explored field-induced quantum level-crossing characteristics of one such spin system: NH4CuPO4.H2O (NCP), an AFM spi…
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Recent research dealing with magnetocaloric effect (MCE) study of antiferromagnetic (AFM) low dimensional spin systems have revealed a number of fascinating ground-state crossover characteristics upon application of external magnetic field. Herein, through MCE investigation we have explored field-induced quantum level-crossing characteristics of one such spin system: NH4CuPO4.H2O (NCP), an AFM spin 1/2 dimer. Experimental magnetization and specific heat data are presented and the data have been employed to evaluate entropy, magnetic energy and magnetocaloric properties. We witness a sign change in magnetic Grueneisen parameter across the level-crossing field B_C. An adiabatic cooling is observed at low temperature by tracing the isentropic curves in temperature-magnetic field plane. Energy-level crossover characteristics in NCP interpreted through MCE analysis are well consistent with the observations made from magnetization and specific heat data.
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Submitted 15 January, 2020; v1 submitted 29 December, 2018;
originally announced December 2018.
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Linear magnetoresistance and surface to bulk coupling in topological insulator thin films
Authors:
Sourabh Singh,
R. K. Gopal,
Jit Sarkar,
Atul Pandey,
Bhavesh G. Patel,
Chiranjib Mitra
Abstract:
We explore the temperature dependent magnetoresistance of bulk insulating topological insulator thin films. Thin films of Bi2Se2Te and BiSbTeSe1.6 were grown using Pulsed Laser Deposition technique and subjected to transport measurements. Magnetotransport measurements indicate a non-saturating linear magnetoresistance (LMR) behavior at high magnetic field values. We present a careful analysis to e…
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We explore the temperature dependent magnetoresistance of bulk insulating topological insulator thin films. Thin films of Bi2Se2Te and BiSbTeSe1.6 were grown using Pulsed Laser Deposition technique and subjected to transport measurements. Magnetotransport measurements indicate a non-saturating linear magnetoresistance (LMR) behavior at high magnetic field values. We present a careful analysis to explain the origin of LMR taking into consideration all the existing models of LMR. Here we consider that the bulk insulating states and the metallic surface states constitute two parallel conduction channels. Invoking this, we were able to explain linear magnetoresistance behavior as a competition between these parallel channels. We observe that the crossover field, where LMR sets in, decreases with increasing temperature. We propose that this cross over field can be used phenomenologically to estimate the strength of surface to bulk coupling.
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Submitted 3 February, 2017;
originally announced February 2017.
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Bulk Saturable absorption in Topological Insulator thin Films
Authors:
Radha Krishna Gopal,
Deepak K. S. Ambast,
Sourabh Singh,
Jit Sarkar,
Bipul Pal,
Chiranjib Mitra
Abstract:
We present nonlinear optical absorption properties of pulsed laser deposited thin films of topological insulator (TI), Bi2Se3 on quartz substrate, using open aperture Z - scan technique. The saturable intensity of as-deposited thin films has been found remarkably improved by an order of magnitude compared to the values reported earlier in the literature. Past results from the literature are inconc…
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We present nonlinear optical absorption properties of pulsed laser deposited thin films of topological insulator (TI), Bi2Se3 on quartz substrate, using open aperture Z - scan technique. The saturable intensity of as-deposited thin films has been found remarkably improved by an order of magnitude compared to the values reported earlier in the literature. Past results from the literature are inconclusive in establishing whether the saturable absorption is coming from surface states or the bulk. Specifically designed experiments with magnetically doped TI samples allow us to attribute the saturable absorption characteristic of TI to the bulk states. Detailed experimental procedures and possible explanation of observed results have been discussed.
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Submitted 9 December, 2016;
originally announced December 2016.
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Parallel and series conduction model in Topological Insulators
Authors:
Sourabh Singh,
R K Gopal,
Jit Sarkar,
C. Mitra
Abstract:
In the past few years there has been a surge in the material science engineering in order to synthesize bulk insulating and surface metallic Topological Insulating (TI) materials. This quest is not only theoretically important but also promising from the novel application perspective. The dependence of temperature on resistance (R-T) of a particular sample reveals a plethora of information about t…
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In the past few years there has been a surge in the material science engineering in order to synthesize bulk insulating and surface metallic Topological Insulating (TI) materials. This quest is not only theoretically important but also promising from the novel application perspective. The dependence of temperature on resistance (R-T) of a particular sample reveals a plethora of information about the electronic properties especially in a unique sample like TI where there are two components comprising of an insulating bulk and metallic surface states. Depending on the amount of intrinsic doping during the sample formation, the bulk can either couple or remain decoupled with the surface. The former leads to a metallic R-T profile whereas the latter is captured by an insulating R-T behavior. These two behaviors can be represented by series and parallel resistor models respectively. In this work we study the R-T behavior in the framework of resistor models capturing the essential features of our sample.
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Submitted 9 November, 2016;
originally announced November 2016.
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Tuning Chemical Potential in the Dirac Cone by Compositional Engineering
Authors:
R. K. Gopal,
Sourabh Singh,
Jit Sarkar,
Chiranjib Mitra
Abstract:
We report the successful formation of bulk insulating ternary topological insulators candidate Bi2Se2Te (BST) by pulsed laser deposition technique. The films were deposited with sequential ablation of separate Bi2Se3 (BS) and Bi2Te3 (BT) targets. From the X-ray diffraction analysis and temperature dependent resistivity we were able to conclude that the as grown thin films have ordered chalcogen la…
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We report the successful formation of bulk insulating ternary topological insulators candidate Bi2Se2Te (BST) by pulsed laser deposition technique. The films were deposited with sequential ablation of separate Bi2Se3 (BS) and Bi2Te3 (BT) targets. From the X-ray diffraction analysis and temperature dependent resistivity we were able to conclude that the as grown thin films have ordered chalcogen layers and the chemical potential in these thin films lie in the bulk gap. To realize entirely topological transport for any device applications it is essential to tune the chemical potential in the bulk gap of the Dirac cone. Magnetotransport data exhibits pronounced two dimensional weak-antilocalization behavior (WAL) at low temperatures. BS and BT thin films do not exhibit topological transport as the chemical potential does not lie entirely in the bulk gap. It was found that BST thin films grown with this cost effective and simple yet elegant technique using double target can be used to deposit quaternary TI thin films, thereby tuning the chemical potential at will in the gap.
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Submitted 12 March, 2016;
originally announced March 2016.
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Strain Control of Oxygen Vacancies in Epitaxial Strontium Cobaltite Films
Authors:
Jonathan R. Petrie,
Chandrima Mitra,
Hyoungjeen Jeen,
Woo Seok Choi,
Tricia L. Meyer,
Fernando A. Reboredo,
John W. Freeland,
Gyula Eres,
Ho Nyung Lee
Abstract:
The ability to manipulate oxygen anion defects rather than metal cations in complex oxides can facilitate creating new functionalities critical for emerging energy and device technologies. However, the difficulty in activating oxygen at reduced temperatures hinders the deliberate control of important defects, oxygen vacancies. Here, strontium cobaltite (SrCoOx) is used to demonstrate that epitaxia…
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The ability to manipulate oxygen anion defects rather than metal cations in complex oxides can facilitate creating new functionalities critical for emerging energy and device technologies. However, the difficulty in activating oxygen at reduced temperatures hinders the deliberate control of important defects, oxygen vacancies. Here, strontium cobaltite (SrCoOx) is used to demonstrate that epitaxial strain is a powerful tool for manipulating the oxygen vacancy concentration even under highly oxidizing environments and at annealing temperatures as low as 300 C. By applying a small biaxial tensile strain (2%), the oxygen activation energy barrier decreases by ~30%, resulting in a tunable oxygen deficient steady-state under conditions that would normally fully oxidize unstrained cobaltite. These strain-induced changes in oxygen stoichiometry drive the cobaltite from a ferromagnetic metal towards an antiferromagnetic insulator. The ability to decouple the oxygen vacancy concentration from its typical dependence on the operational environment is useful for effectively designing oxides materials with a specific oxygen stoichiometry.
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Submitted 12 February, 2016;
originally announced February 2016.
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Topological delocalization and tuning of surface channel separation in Bi2Se2Te Topological Insulator Thin films
Authors:
R. K. Gopal,
Sourabh Singh,
Arpita Mandal,
Jit Sarkar,
Chiranjib Mitra
Abstract:
The surface states of a 3D topological insulator (TI) exhibit topological protection against backscattering. However, the contribution of bulk electrons to the transport data is an impediment to the topological protection of surface. We report the tuning of the chemical potential in the bulk of Bi2Se2Te TI thin films, pinning it near the center of the bulk band gap, thereby suppressing the bulk ca…
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The surface states of a 3D topological insulator (TI) exhibit topological protection against backscattering. However, the contribution of bulk electrons to the transport data is an impediment to the topological protection of surface. We report the tuning of the chemical potential in the bulk of Bi2Se2Te TI thin films, pinning it near the center of the bulk band gap, thereby suppressing the bulk carriers. The temperature dependent resistance of these films shows activated behavior down to 50K, followed by a metallic transition at lower temperatures, a hallmark of the robustness of TI surface states. Manifestation of topological protection and surface dominated transport is explained by 2D weak antilocalization phenomenon. We further explore the effect of surface to bulk coupling in TI in this work, which is captured by the number of effective conducting surface channels that participate in the transport. The presence of a single conducting channel indicates a strong surface to bulk coupling which is detrimental to purely topological transport. We demonstrate the decoupling of topological surface states on opposite surfaces of thin films, thereby suppressing the bulk transport. Our findings provide a deeper understanding of surface to bulk coupling along with topological transport behavior and their respective tunability.
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Submitted 1 December, 2016; v1 submitted 26 May, 2015;
originally announced May 2015.
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Surface Optical and Bulk Acoustic Phonons in the Topological Insulator, Bi2Se2Te
Authors:
Uditendu Mukhopadhyay,
Dipanjan Chaudhuri,
Jit Sarkar,
Sourabh Singh,
Radha Krishna Gopal,
Sandeep Tammu,
Prashanth C. Upadhya,
Chiranjib Mitra
Abstract:
We explore the phonon dynamics of thin films of the topological insulator material Bi2Se2Te using ultrafast pump-probe spectroscopy. The time resolved differential reflectivity of the films exhibit fast and slow oscillations. We have given a careful analysis of variation of phonon frequency as a function of film thickness attributing this to existence of standing acoustic modes. However, no variat…
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We explore the phonon dynamics of thin films of the topological insulator material Bi2Se2Te using ultrafast pump-probe spectroscopy. The time resolved differential reflectivity of the films exhibit fast and slow oscillations. We have given a careful analysis of variation of phonon frequency as a function of film thickness attributing this to existence of standing acoustic modes. However, no variation in the frequency of the optical phonon modes was found with film thickness. This indicates that the optical phonons intrinsically belong to the surface of the topological insulators. The fact that the acoustic phonons can be tuned by changing the film thickness has tremendous potential for room temperature low power spintronic devices and in topological quantum computation.
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Submitted 10 June, 2015; v1 submitted 25 April, 2015;
originally announced April 2015.
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Experimental Evidences of Quantum Phase Transition in a Spin Cluster Compound
Authors:
Tanmoy Chakraborty,
Harkirat Singh,
Chiranjib Mitra
Abstract:
Experimental realization of magnetic field induced quantum phase transition (QPT) is reported for NH4CuPO4.H2O, a two spin cluster material with isotropic Heisenberg interaction. Experimental magnetization and specific heat data have been collected as a function of temperature and magnetic field. Experimental data have been analyzed in terms of Heisenberg dimer model. Two quantum complementary obs…
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Experimental realization of magnetic field induced quantum phase transition (QPT) is reported for NH4CuPO4.H2O, a two spin cluster material with isotropic Heisenberg interaction. Experimental magnetization and specific heat data have been collected as a function of temperature and magnetic field. Experimental data have been analyzed in terms of Heisenberg dimer model. Two quantum complementary observables representing local and non-local properties of the spins are constructed using the experimental data and a clear evidence of QPT is observed through partial quantum information sharing when the magnetic field is swept through a particular value. Signature of QPT is also observed when specific heat is measured as a function of magnetic field at low temperature. Furthermore, using the experimental specific heat data, magnetic energy values are calculated and their variations are captured as a function of magnetic field and temperature.
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Submitted 13 September, 2014;
originally announced September 2014.
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Oxygen diffusion pathways in brownmillerite SrCoO2.5: Influence of structure and chemical potential
Authors:
Chandrima Mitra,
Tricia Meyer,
Ho Nyung Lee,
Fernando A. Reboredo
Abstract:
To design and discover new materials for next-generation energy materials such as solid-oxide fuel cells (SOFCs), a fundamental understanding of their ionic properties and behaviors is essential. The potential applicability of a material for SOFCs is critically determined by the activation energy barrier of oxygen along various diffusion pathways. In this work, we investigate interstitial-oxygen (…
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To design and discover new materials for next-generation energy materials such as solid-oxide fuel cells (SOFCs), a fundamental understanding of their ionic properties and behaviors is essential. The potential applicability of a material for SOFCs is critically determined by the activation energy barrier of oxygen along various diffusion pathways. In this work, we investigate interstitial-oxygen (Oi) diffusion in brownmillerite oxide SrCoO2.5, employing a first-principles approach. Our calculations indicate highly anisotropic ionic diffusion pathways, which result from its anisotropic crystal structure. The one-dimensional-ordered oxygen vacancy channels are found to provide the easiest diffusion pathway with an activation energy barrier height of 0.62 eV. The directions perpendicular to the vacancy channels have higher energy barriers for Oint diffusion. In addition, we have studied migration barriers for oxygen vacancies that could be present as point defects within the material. This in turn could also facilitate the transport of oxygen. Interestingly, for oxygen vacancies, the lowest barrier height was found to occur within the octahedral layer with an energy of 0.82 eV. Our results imply that interstitial migration would be highly one-dimensional in nature. Oxygen vacancy transport, on the other hand, could preferentially occur in the two-dimensional octahedral plane.
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Submitted 29 August, 2014;
originally announced August 2014.
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Weak-antilocalization and Surface Dominated Transport in Topological Insulator Bi2Se2Te
Authors:
Radha Krishna Gopal,
Sourabh Singh,
Ramesh Chandra,
Chiranjib Mitra
Abstract:
We explore the phase coherence of thin films of the topological insulator material Bi2Se2Te grown through pulsed laser deposition (PLD) technique. The films were characterised using various techniques for phase and composition. The films were found to be of good quality. We carried out extensive magneto-transport studies of these films and found that they exhibit two dimensional weak antilocalizat…
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We explore the phase coherence of thin films of the topological insulator material Bi2Se2Te grown through pulsed laser deposition (PLD) technique. The films were characterised using various techniques for phase and composition. The films were found to be of good quality. We carried out extensive magneto-transport studies of these films and found that they exhibit two dimensional weak antilocalization behaviour. A careful analysis revealed a relatively high phase coherence length (58nm at 1.78K) for a PLD grown film. Since PLD is an inexpensive technique, with the possibility to integrate with other materials, one can make devices which can be extremely useful for low power spintronics and topological quantum computation.
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Submitted 16 November, 2014; v1 submitted 15 July, 2014;
originally announced July 2014.
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A study of crossover from 3D ferrimagnetic Bulk $NiCr_{2}O_{4}$ compound into 2D spin-glass like nanophase
Authors:
H. Singh,
T. Ono,
T. Chakraborty,
K. Srikanth,
A. Venimadhav,
R. Chandra,
C. Mitra,
U. Kumar
Abstract:
In this report, the magnetic behaviour of $NiCr_{2}O_{4}$ bulk and nanoparticle samples under different applied magnetic field has been investigated extensively. Nanoparticles of $NiCr_{2}O_{4}$ were obtained by mechanical milling of polycrystalline powder prepared by polyol method. FC-ZFC measurement of bulk at different applied magnetic field has revealed the existence of a ferrimagnetic transit…
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In this report, the magnetic behaviour of $NiCr_{2}O_{4}$ bulk and nanoparticle samples under different applied magnetic field has been investigated extensively. Nanoparticles of $NiCr_{2}O_{4}$ were obtained by mechanical milling of polycrystalline powder prepared by polyol method. FC-ZFC measurement of bulk at different applied magnetic field has revealed the existence of a ferrimagnetic transition around 66K followed by an antiferromagnetic transition close to 30K. However, its nano counterpart has shown remarkable change in magnetic properties - a suppression of ferrimagnetic transition accompanied by strengthening low temperature magnetic phase and observation of a new transition at 90K ($T_P$), which is weakly magnetic in nature. The frequency dependent ac susceptibility data of nanoparticle have been fitted to the well known de Almedia-Thouless equation and a $H^{2/3}$ dependence of the low temperature peak is observed with a resulting zero field freezing temperature ($T_f^0$) equal to 10.1K. Further, the dynamical behaviour near freezing temperature has been analysed in terms of critical behaviour and the obtained fitted parameters values being as $τ_0$(relaxation time constant) = $3.6 X 10^{-6}s$, $T_f^0=8.7$K and $zν= 11.1$. Moreover, Vogel-Fulcher law has been used to understand the nature of freezing transition and the parameter after fitting are obtained as $E_a/k_B = 58.9$K, $τ_0 = 5.22 \times 10^{-8}$ and $T_0 = 8.03$K. Finally, the spin-glass phase is concluded. Moreover, in contrast to bulk, the $H^{2/3}$ dependence of freezing temperature of nanoparticle sample (75h) does support the 2D surface like spin glass nature.
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Submitted 25 November, 2013;
originally announced November 2013.
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Experimental Quantification of Entanglement Through Heat Capacity
Authors:
H. Singh,
T. CHakraborty,
D. Das,
H. S. Jeevan,
Y. Tokiwa,
P. Gegenwart,
C. Mitra
Abstract:
A new experimental realization of heat capacity as an entanglement witness (EW) is reported. Entanglement properties of a low dimensional quantum spin system are investigated by heat capacity measurements performed down to very low temperatures (400mK), for various applied magnetic field values. The experimentally extracted results for the value of heat capacity at zero field matches perfectly wit…
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A new experimental realization of heat capacity as an entanglement witness (EW) is reported. Entanglement properties of a low dimensional quantum spin system are investigated by heat capacity measurements performed down to very low temperatures (400mK), for various applied magnetic field values. The experimentally extracted results for the value of heat capacity at zero field matches perfectly with the theoretical estimates of entanglement from model Hamiltonians. The studied sample is a spin $\frac{1}{2}$ antiferromagnetic system which shows clear signature of quantum phase transition (QPT) at very low temperatures when the heat capacity is varied as a function of fields at a fixed temperature. The variation of entanglement as a function of field is then explored in the vicinity of the quantum phase transition to capture the sudden loss of entanglement.
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Submitted 30 September, 2013;
originally announced September 2013.
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Ground state and Spin-Wave dynamics in Brownmillerite SrCoO2.5, A combined Hybrid Functional and LSDAU study
Authors:
Chandrima Mitra,
Randy S. Fishman,
Satoshi Okamoto,
Ho Nyung Lee,
Fernando A. Reboredo
Abstract:
We theoretically investigate the ground state magnetic properties of the brownmillerite phase of SrCoO2.5. Strong correlations within Co d electrons are treated within the local spin density approximations of Density Functional theory (DFT) with Hubbard U corrections (LSDAU) and results are compared with the Heyd Scuzeria Ernzerhof (HSE) functional. The parameters computed with a U value of 7.5 eV…
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We theoretically investigate the ground state magnetic properties of the brownmillerite phase of SrCoO2.5. Strong correlations within Co d electrons are treated within the local spin density approximations of Density Functional theory (DFT) with Hubbard U corrections (LSDAU) and results are compared with the Heyd Scuzeria Ernzerhof (HSE) functional. The parameters computed with a U value of 7.5 eV are found to match closely to those computed within the HSE functional. A G type antiferromagnetic structure is found to be the most stable one, consistent with experimental observation. By mapping the total energies of different magnetic configurations onto a Heisenberg Hamiltonian we compute the magnetic exchange interaction parameters, J, between the nearest neighbor Co atoms. The J s obtained are then used to compute the spin wave frequencies and inelastic neutron scattering intensities. Among four spin wave branches, the lowest energy mode was found to have the largest scattering intensity at the magnetic zone center, while the other modes becomes dominant at different momenta. These predictions can be tested by experimentally.
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Submitted 20 September, 2013;
originally announced September 2013.
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Lattice distortion effects on topological phases in (LaNiO$_3$)$_2$/(LaAlO$_3$)$_N$ heterostructures grown along the [111] direction
Authors:
Andreas Rüegg,
Chandrima Mitra,
Alexander A. Demkov,
Gregory A. Fiete
Abstract:
We theoretically investigate the influence of internal and external strain on topological phases in (LaNiO$_3$)$_2$/(LaAlO$_3$)$_N$ heterostructures grown along the [111] direction. At the Hartree-Fock level, topological phases originate from an interaction-generated effective spin-orbit coupling that opens a gap in the band structure. For the unstrained system, there is a quadratic band touching…
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We theoretically investigate the influence of internal and external strain on topological phases in (LaNiO$_3$)$_2$/(LaAlO$_3$)$_N$ heterostructures grown along the [111] direction. At the Hartree-Fock level, topological phases originate from an interaction-generated effective spin-orbit coupling that opens a gap in the band structure. For the unstrained system, there is a quadratic band touching at the $Γ$ point at the Fermi energy for unpolarized electrons and Dirac points at K, K$'$ at the Fermi energy for fully polarized electrons. Using density functional theory we show that the quadratic band touching and Dirac points are remarkably stable to internal strain-induced out-of-plane distortions and rotations of the oxygen octahedra, which we compute. The lack of a gap opening from internal strain implies a robustness to the mean-field predicted topological phases for both the polarized and unpolarized systems. We also consider an external strain imposed along the [001] cubic direction and show this can open a gap at the $Γ$ point but leaves the Dirac points intact. Finally, we compute a phase diagram for parameters relevant to LaNiO$_3$ which shows that strain favors a phase with polarized orbitals and antiferromagnetic spin order, but leaves earlier predictions for a zero-magnetic field topological quantum Hall state essentially unchanged. Taken together, our results suggest that the [111] growth direction in perovskites may lead to thin films that are relatively immune to distortion effects compared to those grown along [001].
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Submitted 1 October, 2013; v1 submitted 5 June, 2013;
originally announced June 2013.
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Quantification of Entanglement from Magnetic Susceptibility for a Heisenberg Spin 1/2 system
Authors:
Tanmoy Chakraborty,
Harkirat Singh,
Diptaranjan Das,
Tamal K. Sen,
Swadhin K. Mandal,
Chiranjib Mitra
Abstract:
Temperature and magnetic field dependent magnetization and extraction of entanglement from the experimental data is reported for dichloro(thiazole)copper(II), a Heisenberg spin chain system. The magnetic susceptibility vs. temperature plot exhibits signature of infinite spin chain. Isothermal magnetization measurements (as a function of magnetic field) were performed at various temperatures below…
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Temperature and magnetic field dependent magnetization and extraction of entanglement from the experimental data is reported for dichloro(thiazole)copper(II), a Heisenberg spin chain system. The magnetic susceptibility vs. temperature plot exhibits signature of infinite spin chain. Isothermal magnetization measurements (as a function of magnetic field) were performed at various temperatures below the antiferromagnetic (AFM) ordering, where the AFM correlations persist significantly. These magnetization curves are fitted to the theoretically generated Bonner-Fisher model. Magnetic susceptibility can be used as a macroscopic witness of entanglement; using which entanglement is extracted from the experimentally measured magnetic data.
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Submitted 26 April, 2012; v1 submitted 25 April, 2012;
originally announced April 2012.
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Comparative Study of Magnetic Behaviour in Three Classic Molecular Magnets
Authors:
Tanmoy Chakraborty,
Tamal K. Sen,
Harkirat Singh,
Diptaranjan Das,
Swadhin K. Mandal,
Chiranjib Mitra
Abstract:
We have studied the magnetic properties of three phenalenyl based organic neutral radicals. The first one is a Heisenberg chain antiferromagnet with one unpaired spin per molecule; second one is a diamagnetic, exhibiting a diamagnetic to paramagnetic phase transition at high temperature; the third one comprises of free neutral radicals and shows paramagnetic behaviour. Temperature dependent magnet…
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We have studied the magnetic properties of three phenalenyl based organic neutral radicals. The first one is a Heisenberg chain antiferromagnet with one unpaired spin per molecule; second one is a diamagnetic, exhibiting a diamagnetic to paramagnetic phase transition at high temperature; the third one comprises of free neutral radicals and shows paramagnetic behaviour. Temperature dependent magnetic susceptibility measurements and isothermal magnetization measurements (as a function of magnetic field) were performed on all the three systems. In the case of the antiferromagnetic system, temperature dependent susceptibility and magnetization isotherms were fitted to the Bonner Fisher model. In the case of second system the diamagnetic to paramagnetic phase transition is investigated by performing isothermal magnetization measurements in the two different phases. The diamagnetic to paramagnetic phase transition seems to be of first order in nature.
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Submitted 12 April, 2012;
originally announced April 2012.
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Electronic structure of (LaNiO$_3$)$_2$/(LaAlO$_3$)$_N$ heterostructures grown along [111]
Authors:
Andreas Rüegg,
Chandrima Mitra,
Alexander A. Demkov,
Gregory A. Fiete
Abstract:
The electronic structure of a LaNiO$_3$ bilayer grown along the [111] direction and confined between insulating layers of LaAlO$_3$ is theoretically investigated using a combination of first principle calculations and effective multi-orbital lattice models. The LDA band structure is well reproduced by a tight-binding model for the Ni-$e_g$ orbitals defined on the buckled honeycomb lattice. We high…
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The electronic structure of a LaNiO$_3$ bilayer grown along the [111] direction and confined between insulating layers of LaAlO$_3$ is theoretically investigated using a combination of first principle calculations and effective multi-orbital lattice models. The LDA band structure is well reproduced by a tight-binding model for the Ni-$e_g$ orbitals defined on the buckled honeycomb lattice. We highlight peculiar properties of this model which include almost flat bands as well as linear and quadratic band crossing points. The effect of local correlations is discussed within the LDA$+U$ scheme and within the Hartree-Fock approximation for interacting multi-orbital lattice models. Over a wide range of interaction parameters we find that a ferromagnetic phase is energetically favored. We discuss the possibility of additional orbital order which could stabilize a spontaneous Chern insulator with chiral edge modes or a staggered orbital phase with a $\sqrt{3}\times\sqrt{3}$ reconstruction of the unit cell. By studying an interacting nickel-oxygen lattice model we find that the stability of these orbitally ordered phases also depends on the value of the charge-transfer energy. Controlling the charge-transfer energy might therefore be an important step towards engineering exotic electronic phases in certain classes of oxide heterostructures.
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Submitted 15 June, 2012; v1 submitted 31 March, 2012;
originally announced April 2012.
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Magnetization study to probe the effect of N2+ irradiation on Fe/Co bilayers
Authors:
Harkirat Singh,
Ratnesh Gupta,
Ashish Khandelwal,
Chiranjib Mitra
Abstract:
Fe/Co bilayers were made using ion beam sputtering and then were subjected to nitrogen-ion irradiation to explore the influence of irradiation on their magnetic properties. Magnetization studies of Fe/Co bilayers along with their irradiated counterparts were then performed. The magnetization and coercivity of the as-deposited sample exhibited a two-fold uniaxial symmetry while the behavior for hig…
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Fe/Co bilayers were made using ion beam sputtering and then were subjected to nitrogen-ion irradiation to explore the influence of irradiation on their magnetic properties. Magnetization studies of Fe/Co bilayers along with their irradiated counterparts were then performed. The magnetization and coercivity of the as-deposited sample exhibited a two-fold uniaxial symmetry while the behavior for high temperature irradiated sample depicts a small shift in the two fold behavior. The magnetization data measured with the magnetic field perpendicular to the plane of the film exhibited a hysteresis in both the case of the irradiated sample as well as as-deposited sample. A small increase in coercivity for the irradiated sample was observed which is due to various reasons including formation of FeCo solid solution due to ion irradiation at the interface.
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Submitted 28 February, 2012;
originally announced February 2012.
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Experimental detection of quantum information sharing and their quantification in quantum spin systems
Authors:
Diptaranjan Das,
Tanmoy Chakraborty,
Harkirat Singh,
Chiranjib Mitra
Abstract:
We study the macroscopic entanglement properties of a low dimensional quantum spin system by investigating its magnetic properties at low temperatures and high magnetic fields. The tempera- ture and magnetic field dependence of entanglement from the susceptibility and magnetization data comparing the experimental extraction with theoretical estimates are given. Extraction of entan- glement has bee…
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We study the macroscopic entanglement properties of a low dimensional quantum spin system by investigating its magnetic properties at low temperatures and high magnetic fields. The tempera- ture and magnetic field dependence of entanglement from the susceptibility and magnetization data comparing the experimental extraction with theoretical estimates are given. Extraction of entan- glement has been made possible through the macroscopic witness operators magnetic susceptibility. The protocol followed in doing so has been outlined in some recent work. Various plots of entan- glement comparing the experimental extraction with theoretical estimates are given. Quantitative comparison between concurrence and entanglement witness is given for both the theoretical and experimental results. Theory and experiments match over a wide range of temperature and field. The spin system studied is a chain, which exhibits dimerisation and yields fascinating entanglement properties when the temperature and magnetic field is varied. These spin systems exhibit quantum phase transition (QPT) at low temperatures, when the magnetic field is swept through a critical value. We show explicitly for the first time, using tools used in quantum information processing (QIP), that quantum phase transition (QPT) can be captured experimentally using canonically conjugate observables. Macroscopically, quantum complementarity relation clearly delineates entangled states from separable states across the QPT. We have estimated the partial information sharing in this system from our magnetization and susceptibility data. The complementarity relation has been experimentally verified to hold in this system
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Submitted 28 September, 2011; v1 submitted 8 September, 2011;
originally announced September 2011.
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Molecular Thin Films: a New Type of Magnetic Switch
Authors:
S. M. Heutz,
C. Mitra,
W. Wu,
A. J. Fisher,
A. Kerridge,
A. M. Stoneham,
A. H. Harker,
J. Gardener,
Hsiang-Han Tseng,
T. S. Jones,
C. Renner,
G. Aeppli
Abstract:
The design and fabrication of materials that exhibit both semiconducting and magnetic properties for spintronics and quantum computing has proven difficult. Important starting points are high-purity thin films as well as fundamental theoretical understanding of the magnetism. Here we show that small molecules have great potential in this area, due to ease of insertion of localised spins in organ…
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The design and fabrication of materials that exhibit both semiconducting and magnetic properties for spintronics and quantum computing has proven difficult. Important starting points are high-purity thin films as well as fundamental theoretical understanding of the magnetism. Here we show that small molecules have great potential in this area, due to ease of insertion of localised spins in organic frameworks and both chemical and structural purity. In particular, we demonstrate that archetypal molecular semiconductors, namely the metal phthalocyanines (Pc), can be readily fabricated as thin film quantum antiferromagnets, important precursors to a solid state quantum computer. Their magnetic state can be switched via fabrication steps which modify the film structure, offering practical routes into information processing. Theoretical calculations show that a new mechanism, which is the molecular analogue of the interactions between magnetic ions in metals, is responsible for the magnetic states. Our combination of theory and experiments opens the field of organic thin film magnetic engineering.
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Submitted 5 May, 2008;
originally announced May 2008.
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Ferromagnetic redshift of the optical gap in GdN
Authors:
H. J. Trodahl,
A. R. H. Preston,
J. Zhong,
B. J. Ruck,
N. Strickland,
C. Mitra,
W. R. L. Lambrecht
Abstract:
We report measurements of the optical gap in a GdN film at temperatures from 300 to 6K, covering both the paramagnetic and ferromagnetic phases. The gap is 1.31eV in the paramagnetic phase and red-shifts to 0.9eV in the spin-split bands below the Curie temperature. The paramagnetic gap is larger than was suggested by very early experiments, and has permitted us to refine a (LSDA+U)-computed band…
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We report measurements of the optical gap in a GdN film at temperatures from 300 to 6K, covering both the paramagnetic and ferromagnetic phases. The gap is 1.31eV in the paramagnetic phase and red-shifts to 0.9eV in the spin-split bands below the Curie temperature. The paramagnetic gap is larger than was suggested by very early experiments, and has permitted us to refine a (LSDA+U)-computed band structure. The band structure was computed in the full translation symmetry of the ferromagnetic ground state, assigning the paramagnetic-state gap as the average of the majority- and minority-spin gaps in the ferromagnetic state. That procedure has been further tested by a band structure in a 32-atom supercell with randomly-oriented spins. After fitting only the paramagnetic gap the refined band structure then reproduces our measured gaps in both phases by direct transitions at the X point.
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Submitted 26 July, 2007; v1 submitted 21 May, 2007;
originally announced May 2007.
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Photoemission and x-ray absorption spectroscopy study of electron-doped colossal magnetoresistance manganite: La0.7Ce0.3MnO3 film
Authors:
S. W. Han,
J. -S. Kang,
K. H. Kim,
J. D. Lee,
J. H. Kim,
S. C. Wi,
C. Mitra,
P. Raychaudhuri,
S. Wirth,
K. J. Kim,
B. S. Kim,
J. I. Jeong,
S. K. Kwon,
B. I. Min
Abstract:
The electronic structure of La0.7Ce0.3MnO3 (LCeMO) thin film has been investigated using photoemission spectroscopy (PES) and x-ray absorption spectroscopy (XAS). The Ce 3d core-level PES and XAS spectra of LCeMO are very similar to those of CeO2, indicating that Ce ions are far from being trivalent. A very weak 4f resonance is observed around the Ce 4d $\to$ 4f absorption edge, suggesting that…
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The electronic structure of La0.7Ce0.3MnO3 (LCeMO) thin film has been investigated using photoemission spectroscopy (PES) and x-ray absorption spectroscopy (XAS). The Ce 3d core-level PES and XAS spectra of LCeMO are very similar to those of CeO2, indicating that Ce ions are far from being trivalent. A very weak 4f resonance is observed around the Ce 4d $\to$ 4f absorption edge, suggesting that the localized Ce 4f states are almost empty in the ground state. The Mn 2p XAS spectrum reveals the existence of the Mn(2+) multiplet feature, confirming the Mn(2+)-Mn(3+) mixed-valent states of Mn ions in LCeMO. The measured Mn 3d PES/XAS spectra for LCeMO agrees reasonably well with the calculated Mn 3d PDOS using the LSDA+U method. The LSDA+U calculation predicts a half-metallic ground state for LCeMO.
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Submitted 8 September, 2003;
originally announced September 2003.
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Direct observation of electron doping in La0.7Ce0.3MnO3 using x-ray absorption spectroscopy
Authors:
C. Mitra,
Z. Hu,
P. Raychaudhuri,
S. Wirth,
S. I. Csiszar,
H. H. Hsieh,
H. J. Lin,
C. T. Chen,
L. H. Tjeng
Abstract:
We report on a X-ray absorption spectroscopic (XAS) study on a thin film of La0.7Ce0.3MnO3, a manganite which was previously only speculated to be an electron doped system. The measurements clearly show that the cerium is in the Ce(IV) valence state and that the manganese is present in a mixture of Mn2+ and Mn3+ valence states. These data unambiguously demonstrate that La0.7Ce0.3MnO3 is an elect…
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We report on a X-ray absorption spectroscopic (XAS) study on a thin film of La0.7Ce0.3MnO3, a manganite which was previously only speculated to be an electron doped system. The measurements clearly show that the cerium is in the Ce(IV) valence state and that the manganese is present in a mixture of Mn2+ and Mn3+ valence states. These data unambiguously demonstrate that La0.7Ce0.3MnO3 is an electron doped colossal magnetoresistive manganite, a finding that may open up new opportunities both for device applications as well as for further basic research towards a better modelling of the colossal magnetoresistance phenomenon in these materials.
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Submitted 19 August, 2002; v1 submitted 10 June, 2002;
originally announced June 2002.
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Observation of minority spin character of the new electron doped manganite La_0.7Ce_0.3MnO_3 from tunneling magnetoresistance
Authors:
C. Mitra,
P. Raychaudhuri,
K. Doerr,
K. -H. Mueller,
L. Schultz,
P. M. Oppeneer,
S. Wirth
Abstract:
We report the magnetotransport characteristics of a trilayer ferromagnetic tunnel junction build of an electron doped manganite (La_0.7Ce_0.3MnO_3) and a hole doped manganite (La_0.7Ca_0.3MnO_3). At low temperatures the junction exhibits a large positive tunneling magnetoresistance (TMR), irrespective of the bias voltage. At intermediate temperatures below T_C the sign of the TMR is dependent on…
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We report the magnetotransport characteristics of a trilayer ferromagnetic tunnel junction build of an electron doped manganite (La_0.7Ce_0.3MnO_3) and a hole doped manganite (La_0.7Ca_0.3MnO_3). At low temperatures the junction exhibits a large positive tunneling magnetoresistance (TMR), irrespective of the bias voltage. At intermediate temperatures below T_C the sign of the TMR is dependent on the bias voltage across the junction. The magnetoresistive characteristics of the junction strongly suggest that La_0.7Ce_0.3MnO_3 is a minority spin carrier ferromagnet with a high degree of spin polarization, i.e. a transport half metal.
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Submitted 11 October, 2002; v1 submitted 15 May, 2002;
originally announced May 2002.
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A 'p-n' diode with hole and electron-doped lanthanum manganite
Authors:
C. Mitra,
P. Raychaudhuri,
G. Kobernik,
K. Dorr,
R. Pinto,
K-H. Muller,
L. Schultz
Abstract:
The hole-doped manganite La0.7Ca0.3MnO3 and the electron-doped manganite La0.7Ce0.3MnO3 undergo an insulator to metal transition at around 250 K, above which both behave as a polaronic semiconductor. We have successfully fabricated an epitaxial trilayer (La0.7Ca0.3MnO3/SrTiO3/La0.7Ce0.3MnO3), where SrTiO3 is an insulator. At room temperature, i.e. in the semiconducting regime, it exhibits asymme…
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The hole-doped manganite La0.7Ca0.3MnO3 and the electron-doped manganite La0.7Ce0.3MnO3 undergo an insulator to metal transition at around 250 K, above which both behave as a polaronic semiconductor. We have successfully fabricated an epitaxial trilayer (La0.7Ca0.3MnO3/SrTiO3/La0.7Ce0.3MnO3), where SrTiO3 is an insulator. At room temperature, i.e. in the semiconducting regime, it exhibits asymmetric current-voltage (I-V) characteristics akin to a p-n diode. The observed asymmetry in the I-V characteristics disappears at low temperatures where both the manganite layers are metallic. To the best of our knowledge, this is the first report of such a p-n diode, using the polaronic semiconducting regime of doped manganites.
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Submitted 9 August, 2001;
originally announced August 2001.
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Metal-Insulator Transition and Ferromagnetism in the Electron Doped Layered Manganites La2.3-xYxCa0.7Mn2O7 (x=0,0.3,0.5)
Authors:
P. Raychaudhuri,
C. Mitra,
A. Paramekanti,
R. Pinto,
A. K. Nigam,
S. K. Dhar
Abstract:
Bulk samples of La2.3-xYxCa0.7Mn2O7, x=0,0.3,0.5, with layered perovskite structure have been synthesized and investigated with respect to their electrical, electronic and magnetic properties. It is found that La1.8Y0.5Ca0.7Mn2O7 has tetragonal structure and is a metallic ferromagnet with a magnetic transition temperature of 170 K. The compound shows metallic behavior below 140 K and has a large…
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Bulk samples of La2.3-xYxCa0.7Mn2O7, x=0,0.3,0.5, with layered perovskite structure have been synthesized and investigated with respect to their electrical, electronic and magnetic properties. It is found that La1.8Y0.5Ca0.7Mn2O7 has tetragonal structure and is a metallic ferromagnet with a magnetic transition temperature of 170 K. The compound shows metallic behavior below 140 K and has a large magnetoresistance (MR) Delta-rho/rho(0)~94% at 100 K at 34 kOe. For x=0 and 0.3 the structure is monoclinic with a suppression of metallicity. For x=0 the material is an ferromagnetic insulator. We observed a large increase in the coefficient of the linear term in specific heat with decreasing x. As far as we are aware, this is the first report of an electron doped manganite showing metal-insulator transition and ferromagnetism.
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Submitted 21 May, 1998;
originally announced May 1998.