Showing 1–8 of 8 results for author: Gray, I

Stoichiometry-induced ferromagnetism in altermagnetic candidate MnTe

Authors: Michael Chilcote, Alessandro R. Mazza, Qiangsheng Lu, Isaiah Gray, Qi Tian, Qinwen Deng, Duncan Moseley, An-Hsi Chen, Jason Lapano, Jason S. Gardner, Gyula Eres, T. Zac Ward, Erxi Feng, Huibo Cao, Valeria Lauter, Michael A. McGuire, Raphael Hermann, David Parker, Myung-Geun Han, Asghar Kayani, Gaurab Rimal, Liang Wu, Timothy R. Charlton, Robert G. Moore, Matthew Brahlek

Abstract: The field of spintronics has seen a surge of interest in altermagnetism due to novel predictions and many possible applications. MnTe is a leading altermagnetic candidate that is of significant interest across spintronics due to its layered antiferromagnetic structure, high Neel temperature (TN ~ 310 K) and semiconducting properties. We present results on molecular beam epitaxy (MBE) grown MnTe/In… ▽ More The field of spintronics has seen a surge of interest in altermagnetism due to novel predictions and many possible applications. MnTe is a leading altermagnetic candidate that is of significant interest across spintronics due to its layered antiferromagnetic structure, high Neel temperature (TN ~ 310 K) and semiconducting properties. We present results on molecular beam epitaxy (MBE) grown MnTe/InP(111) films. Here, it is found that the electronic and magnetic properties are driven by the natural stoichiometry of MnTe. Electronic transport and in situ angle-resolved photoemission spectroscopy show the films are natively metallic with the Fermi level in the valence band and the band structure is in good agreement with first principles calculations for altermagnetic spin-splitting. Neutron diffraction confirms that the film is antiferromagnetic with planar anisotropy and polarized neutron reflectometry indicates weak ferromagnetism, which is linked to a slight Mn-richness that is intrinsic to the MBE grown samples. When combined with the anomalous Hall effect, this work shows that the electronic response is strongly affected by the ferromagnetic moment. Altogether, this highlights potential mechanisms for controlling altermagnetic ordering for diverse spintronic applications. △ Less

Submitted 6 June, 2024; originally announced June 2024.

Comments: Accepted in Advanced Functional Materials

Time-resolved magneto-optical effects in the altermagnet candidate MnTe

Authors: Isaiah Gray, Qinwen Deng, Qi Tian, Michael Chilcote, J. Steven Dodge, Matthew Brahlek, Liang Wu

Abstract: $α$-MnTe is an antiferromagnetic semiconductor with above room temperature $T_N… ▽ More $α$-MnTe is an antiferromagnetic semiconductor with above room temperature $T_N$ = 310 K, which is promising for spintronic applications. Recently, it was reported to be an altermagnet, containing bands with momentum-dependent spin splitting; time-resolved experimental probes of MnTe are therefore important both for understanding novel magnetic properties and potential device applications. We investigate ultrafast spin dynamics in epitaxial MnTe(001)/InP(111) thin films using pump-probe magneto-optical measurements in the Kerr configuration. At room temperature, we observe an oscillation mode at 55 GHz that does not appear at zero magnetic field. Combining field and polarization dependence, we identify this mode as a magnon, likely originating from inverse stimulated Raman scattering. Magnetic field-dependent oscillations persist up to at least 335 K, which could reflect coupling to known short-range magnetic order in MnTe above $T_N$. Additionally, we observe two optical phonons at 3.6 THz and 4.2 THz, which broaden and redshift with increasing temperature. △ Less

Submitted 25 October, 2024; v1 submitted 7 April, 2024; originally announced April 2024.

Comments: 27 pages including supplemental

Current-induced switching of thin film $α$-Fe$_2$O$_3$ devices imaged using a scanning single-spin microscope

Authors: Qiaochu Guo, Anthony D'Addario, Yang Cheng, Jeremy Kline, Isaiah Gray, Hil Fung Harry Cheung, Fengyuan Yang, Katja C. Nowack, Gregory D. Fuchs

Abstract: Electrical switching of Néel order in an antiferromagnetic insulator is desirable as a basis for memory applications. Unlike electrically-driven switching of ferromagnetic order via spin-orbit torques, electrical switching of antiferromagnetic order remains poorly understood. Here we investigate the low-field magnetic properties of 30 nm thick, c-axis oriented $α$-Fe$_2$O$_3$ Hall devices using a… ▽ More Electrical switching of Néel order in an antiferromagnetic insulator is desirable as a basis for memory applications. Unlike electrically-driven switching of ferromagnetic order via spin-orbit torques, electrical switching of antiferromagnetic order remains poorly understood. Here we investigate the low-field magnetic properties of 30 nm thick, c-axis oriented $α$-Fe$_2$O$_3$ Hall devices using a diamond nitrogen-vacancy (NV) center scanning microscope. Using the canted moment of $α$-Fe$_2$O$_3$ as a magnetic handle on its Néel vector, we apply a saturating in-plane magnetic field to create a known initial state before letting the state relax in low field for magnetic imaging. We repeat this procedure for different in-plane orientations of the initialization field. We find that the magnetic field images are characterized by stronger magnetic textures for fields along $[\bar{1}\bar{1}20]$ and $[11\bar{2}0]$, suggesting that despite the expected 3-fold magneto-crystalline anisotropy, our $α$-Fe$_2$O$_3$ thin films have an overall in-plane uniaxial anisotropy. We also study current-induced switching of the magnetic order in $α$-Fe$_2$O$_3$. We find that the fraction of the device that switches depends on the current pulse duration, amplitude and direction relative to the initialization field. Specifically, we find that switching is most efficient when current is applied along the direction of the initialization field. △ Less

Submitted 12 October, 2022; originally announced October 2022.

Comments: 17 pages including supporting information

Erbium-Implanted Materials for Quantum Communication Applications

Authors: Paul Stevenson, Christopher M Phenicie, Isaiah Gray, Sebastian P Horvath, Sacha Welinski, Austin M Ferrenti, Alban Ferrier, Philippe Goldner, Sujit Das, Ramamoorthy Ramesh, Robert J Cava, Nathalie P de Leon, Jeff D Thompson

Abstract: Erbium-doped materials can serve as spin-photon interfaces with optical transitions in the telecom C-band, making them an exciting class of materials for long-distance quantum communication. However, the spin and optical coherence times of Er3+ ions are limited by currently available host materials, motivating the development of new Er3+-containing materials. Here, we demonstrate the use of ion im… ▽ More Erbium-doped materials can serve as spin-photon interfaces with optical transitions in the telecom C-band, making them an exciting class of materials for long-distance quantum communication. However, the spin and optical coherence times of Er3+ ions are limited by currently available host materials, motivating the development of new Er3+-containing materials. Here, we demonstrate the use of ion implantation to efficiently screen prospective host candidates, and show that disorder introduced by ion implantation can be mitigated through post-implantation thermal processing to achieve inhomogeneous linewidths comparable to bulk linewidths in as-grown samples. We present optical spectroscopy data for each host material, which allows us to determine the level structure of each site, allowing us to compare the environments of Er3+ introduced via implantation and via doping during growth. We demonstrate that implantation can generate a range of local environments for Er3+, including those observed in bulk-doped materials, and that the populations of these sites can be controlled with thermal processing. △ Less

Submitted 10 October, 2021; originally announced October 2021.

Nanoscale magnetization and current imaging using scanning-probe magneto-thermal microscopy

Authors: Chi Zhang, Jason M. Bartell, Jonathan C. Karsch, Isaiah Gray, Gregory D. Fuchs

Abstract: Magnetic microscopy that combines nanoscale spatial resolution with picosecond scale temporal resolution uniquely enables direct observation of the spatiotemporal magnetic phenomena that are relevant to future high-speed, high-density magnetic storage and logic technologies. Magnetic microscopes that combine these metrics has been limited to facility-level instruments. To address this gap in lab-a… ▽ More Magnetic microscopy that combines nanoscale spatial resolution with picosecond scale temporal resolution uniquely enables direct observation of the spatiotemporal magnetic phenomena that are relevant to future high-speed, high-density magnetic storage and logic technologies. Magnetic microscopes that combine these metrics has been limited to facility-level instruments. To address this gap in lab-accessible spatiotemporal imaging, we develop a time-resolved near-field magnetic microscope based on magneto-thermal interactions. We demonstrate both magnetization and current density imaging modalities, each with spatial resolution that far surpasses the optical diffraction limit. In addition, we study the near-field and time-resolved characteristics of our signal and find that our instrument possesses a spatial resolution on the scale of 100 nm and a temporal resolution below 100 ps. Our results demonstrate an accessible and comparatively low-cost approach to nanoscale spatiotemporal magnetic microscopy in a table-top form to aid the science and technology of dynamic magnetic devices with complex spin textures. △ Less

Submitted 4 February, 2021; originally announced February 2021.

Imaging uncompensated moments and exchange-biased emergent ferromagnetism in FeRh thin films

Authors: Isaiah Gray, Gregory M. Stiehl, John T. Heron, Antonio B. Mei, Darrell G. Schlom, Ramamoorthy Ramesh, Daniel C. Ralph, Gregory D. Fuchs

Abstract: Uncompensated moments in antiferromagnets are responsible for exchange bias in antiferromagnet/ferromagnet heterostructures; however, they are difficult to directly detect because any signal they contribute is typically overwhelmed by the ferromagnetic layer. We use magneto-thermal microscopy to image uncompensated moments in thin films of FeRh, a room-temperature antiferromagnet that exhibits a 1… ▽ More Uncompensated moments in antiferromagnets are responsible for exchange bias in antiferromagnet/ferromagnet heterostructures; however, they are difficult to directly detect because any signal they contribute is typically overwhelmed by the ferromagnetic layer. We use magneto-thermal microscopy to image uncompensated moments in thin films of FeRh, a room-temperature antiferromagnet that exhibits a 1st-order phase transition to a ferromagnetic state near 100~$^\circ$C. FeRh provides the unique opportunity to study both uncompensated moments in the antiferromagnetic phase and the interaction of uncompensated moments with emergent ferromagnetism within a relatively broad (10-15~$^\circ$C) temperature range near $T_C$. In the AF phase below $T_C$, we image both pinned UMs, which cause local vertical exchange bias, and unpinned UMs, which exhibit an enhanced coercive field that reflects exchange-coupling to the AF bulk. Near $T_C$, where AF and FM order coexist, we find that the emergent FM order is exchange-coupled to the bulk Néel order. This exchange coupling leads to the nucleation of unusual configurations in which different FM domains are pinned parallel, antiparallel, and perpendicular to the applied magnetic field before suddenly collapsing into a state uniformly parallel to the field. △ Less

Submitted 17 June, 2019; originally announced June 2019.

Comments: 29 pages and 16 figures with appendix

Journal ref: Phys. Rev. Materials 3, 124407 (2019)

Local Photothermal Control of Phase Transitions for On-demand Room-temperature Rewritable Magnetic Patterning

Authors: Antonio B. Mei, Isaiah Gray, Yongjian Tang, Jurgen Schubert, Don Werder, Jason Bartell, Daniel C. Ralph, Gregory D. Fuchs, Darrell G. Schlom

Abstract: The ability to make controlled patterns of magnetic structures within a nonmagnetic background is essential for several types of existing and proposed technologies. Such patterns provide the foundation of magnetic memory and logic devices, allow the creation of artificial spin-ice lattices and enable the study of magnon propagation. Here, we report a novel approach for magnetic patterning that all… ▽ More The ability to make controlled patterns of magnetic structures within a nonmagnetic background is essential for several types of existing and proposed technologies. Such patterns provide the foundation of magnetic memory and logic devices, allow the creation of artificial spin-ice lattices and enable the study of magnon propagation. Here, we report a novel approach for magnetic patterning that allows repeated creation and erasure of arbitrary shapes of thin-film ferromagnetic structures. This strategy is enabled by epitaxial Fe$_{0.52}$Rh$_{0.48}$ thin films designed so that both ferromagnetic and antiferromagnetic phases are bistable at room temperature. Starting with the film in a uniform antiferromagnetic state, we demonstrate the ability to write arbitrary patterns of the ferromagnetic phase by local heating with a focused laser. If desired, the results can then be erased by cooling with a thermoelectric cooler and the material repeatedly re-patterned. △ Less

Submitted 17 June, 2019; originally announced June 2019.

Comments: 3 figures, 5 pages

Spin Seebeck imaging of spin-torque switching in antiferromagnetic Pt/NiO heterostructures

Authors: Isaiah Gray, Takahiro Moriyama, Nikhil Sivadas, Gregory M. Stiehl, John T. Heron, Ryan Need, Brian J. Kirby, David H. Low, Katja C. Nowack, Darrell G. Schlom, Daniel C. Ralph, Teruo Ono, Gregory D. Fuchs

Abstract: As electrical control of Néel order opens the door to reliable antiferromagnetic spintronic devices, understanding the microscopic mechanisms of antiferromagnetic switching is crucial. Spatially-resolved studies are necessary to distinguish multiple nonuniform switching mechanisms; however, progress has been hindered by the lack of tabletop techniques to image the Néel order. We demonstrate spin S… ▽ More As electrical control of Néel order opens the door to reliable antiferromagnetic spintronic devices, understanding the microscopic mechanisms of antiferromagnetic switching is crucial. Spatially-resolved studies are necessary to distinguish multiple nonuniform switching mechanisms; however, progress has been hindered by the lack of tabletop techniques to image the Néel order. We demonstrate spin Seebeck microscopy as a sensitive, table-top method for imaging antiferromagnetic order in thin films, and apply this technique to study spin-torque switching in NiO/Pt and Pt/NiO/Pt heterostructures. We establish the interfacial antiferromagnetic spin Seebeck effect in NiO as a probe of surface Néel order, resolving antiferromagnetic spin domains within crystalline twin domains. By imaging before and after applying current-induced spin torque, we resolve spin domain rotation and domain wall motion, acting simultaneously. We correlate the changes in spin Seebeck images with electrical measurements of the average Néel orientation through the spin Hall magnetoresistance, confirming that we image antiferromagnetic order. △ Less

Submitted 1 March, 2019; v1 submitted 9 October, 2018; originally announced October 2018.

Comments: 26 pages including supporting information

Journal ref: Phys. Rev. X 9, 041016 (2019)