Strain engineering of the electronic states of silicon-based quantum emitters
Authors:
A. Ristori,
N. Granchi,
F. Intonti,
M. Khoury,
D. Hannani,
C. M. Ruiz,
M. Salvalaglio,
A. Filippatos,
M. Amato,
T. Herzig,
J. Meijer,
S. Pezzagna,
M. Bollani,
C. Barri,
M. Abbarchi,
F. Biccari
Abstract:
Light-emitting complex defects in silicon have been considered a potential platform for quantum technologies based on spin and photon degrees of freedom working at telecom wavelengths. Their integration in complex devices is still in its infancy, and it was mostly focused on light extraction and guiding. Here we address the control of the electronic states of carbon-related impurities (G-centers)…
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Light-emitting complex defects in silicon have been considered a potential platform for quantum technologies based on spin and photon degrees of freedom working at telecom wavelengths. Their integration in complex devices is still in its infancy, and it was mostly focused on light extraction and guiding. Here we address the control of the electronic states of carbon-related impurities (G-centers) via strain engineering. By embedding them in patches of silicon on insulator and topping them with SiN, symmetry breaking along [001] and [110] directions is demonstrated, resulting in a controlled splitting of the zero phonon line (ZPL), as accounted for by the piezospectroscopic theoretical framework. The splitting can be as large as 18 meV and it is finely tuned by selecting patch size or by moving in different positions on the patch. Some of the split, strained ZPLs are almost fully polarized and their overall intensity is enhanced up to 7 times with respect to the flat areas, whereas their recombination dynamics is slightly affected. Our technique can be extended to other impurities and Si-based devices such as suspended bridges, photonic crystal microcavities, Mie resonators, and integrated photonic circuits.
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Submitted 12 June, 2023;
originally announced June 2023.
Near-field Hyperspectral Imaging of Resonant Mie Modes in a Dielectric Island
Authors:
Nicoletta Granchi,
Michele Montanari,
Andrea Ristori,
Mario Khoury,
Mohammed Bouabdellaui,
Chiara Barri,
Luca Fagiani,
Massimo Gurioli,
Monica Bollani,
Marco Abbarchi,
Francesca Intonti
Abstract:
All-dielectric, sub-micrometric particles have been successfully exploited for light management in a plethora of applications at visible and near-infrared frequency. However, the investigation of the intricacies of the Mie resonances at the sub-wavelength scale has been hampered by the limitation of conventional near-field methods. Here we address spatial and spectral mapping of multi-polar modes…
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All-dielectric, sub-micrometric particles have been successfully exploited for light management in a plethora of applications at visible and near-infrared frequency. However, the investigation of the intricacies of the Mie resonances at the sub-wavelength scale has been hampered by the limitation of conventional near-field methods. Here we address spatial and spectral mapping of multi-polar modes of a Si island by hyper-spectral imaging. The simultaneous detection of several resonant modes allows to clarify the role of substrate and incidence angle of the impinging light, highlighting spectral splitting of the quadrupolar mode and resulting in different spatial features of the field intensity. We explore theoretically and experimentally such spatial features. Details as small as 200 nm can be detected and are in agreement with simulations based on a Finite Difference Time Domain method. Our results are relevant to near-field imaging of dielectric structures, to the comprehension of the photophysics of resonant Mie structures, to beam steering and to the resonant coupling with light emitters. Our analysis paves the way for a novel approach to control the spatial overlap of a single emitter with localized electric field maxima.
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Submitted 31 August, 2021;
originally announced August 2021.