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Imaging the Meissner effect and local superfluid stiffness in a graphene superconductor
Authors:
Ruoxi Zhang,
Benjamin A. Foutty,
Owen Sheekey,
Trevor Arp,
Siyuan Xu,
Tian Xie,
Yi Guo,
Hari Stoyanov,
Sherlock Gu,
Aidan Keough,
Evgeny Redekop,
Canxun Zhang,
Takashi Taniguchi,
Kenji Watanabe,
Martin E. Huber,
Chenhao Jin,
Erez Berg,
Andrea F. Young
Abstract:
We report the observation of the Meissner effect in a rhombohedral graphene superconductor, realized via direct imaging of the static fringe magnetic field. In our few-micron sample, the onset of superconductivity manifests as a diamagnetic response that screens only $\sim 100$ ppm of the applied magnetic field. Tracking the evolution of the resulting nanotesla-scale fields in real space allows us…
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We report the observation of the Meissner effect in a rhombohedral graphene superconductor, realized via direct imaging of the static fringe magnetic field. In our few-micron sample, the onset of superconductivity manifests as a diamagnetic response that screens only $\sim 100$ ppm of the applied magnetic field. Tracking the evolution of the resulting nanotesla-scale fields in real space allows us to observe the entry of superconducting vortices and map the local superfluid stiffness, $ρ_s$. Correlating fringe field signals from both Meissner screening and magnetically ordered states, we show that superconductivity onsets in the midst of a continuous quantum phase transition to a canted spin ferromagnet. Within the superconducting state, we find the temperature dependence of $ρ_s$ to be incompatible with isotropic Bardeen-Cooper-Schrieffer theory and the zero-temperature stiffness $ρ_s^0$ to be linearly proportional to $T_c$, constraining future theoretical models of superconductivity in this system.
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Submitted 26 March, 2026;
originally announced March 2026.
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Imaging flat band electron hydrodynamics in biased bilayer graphene
Authors:
Canxun Zhang,
Evgeny Redekop,
Hari Stoyanov,
Jack H. Farrell,
Sunghoon Kim,
Ludwig Holleis,
David Gong,
Aidan Keough,
Youngjoon Choi,
Takashi Taniguchi,
Kenji Watanabe,
Martin E. Huber,
Ania C. Bleszynski Jayich,
Andrew Lucas,
Andrea F. Young
Abstract:
Hydrodynamic electron transport arises when carrier kinetics are dominated by interelectron collisions rather than the relaxation of momentum out of the electron system. In recent years, signatures of electron hydrodynamics have been reported in graphene devices owing to the low disorder and weak electron-phonon coupling. However, these experiments have been performed in regimes where the carrier…
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Hydrodynamic electron transport arises when carrier kinetics are dominated by interelectron collisions rather than the relaxation of momentum out of the electron system. In recent years, signatures of electron hydrodynamics have been reported in graphene devices owing to the low disorder and weak electron-phonon coupling. However, these experiments have been performed in regimes where the carrier mass is light, and the electron-electron collision length--though smaller than corresponding lengths for phonon or impurity scattering--remains large in absolute terms, typically several hundred nanometers. This restricts hydrodynamic transport phenomena to large length scales, limiting miniaturization of devices based on hydrodynamic flow. The advent of dual-gated rhombohedral graphene multilayers introduces a new route toward enhanced hydrodynamic behavior via their large--and tunable--effective mass. Here, we employ a scanning superconducting magnetic sensor to image local current flow in dual-gated bilayer graphene. Exploiting a sample geometry sensitive to both laminar and vortical flow, we identify three distinct transport regimes--ballistic, hydrodynamic, and diffusive--across the full phase space spanned by carrier density and displacement field. The strongest hydrodynamic transport is observed in the flat band regime, where fitting our results to a unified Boltzmann transport model reveals the electron-electron scattering length to be comparable to the Fermi wavelength of ~50 nm. High-current measurements, meanwhile, reveal striking nonlinearities in the flow pattern. Our results pave the way for miniaturized electronic devices based on linear and nonlinear electron hydrodynamics.
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Submitted 15 May, 2026; v1 submitted 11 March, 2026;
originally announced March 2026.
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Nanoscale infrared and microwave imaging of stacking faults in multilayer graphene
Authors:
Ludwig Holleis,
Liam Cohen,
Noah Samuelson,
Caitlin L. Patterson,
Ysun Choi,
Marco Valentini,
Owen Sheekey,
Youngjoon Choi,
Jiaxi Zhou,
Hari Stoyanov,
Takashi Taniguchi,
Kenji Watanabe,
Qichi Hu,
Jin Hee Kim,
Cassandra Phillips,
Peter De Wolf,
Andrea F. Young
Abstract:
Graphite occurs in a range of metastable stacking orders characterized by both the number and direction of shifts between adjacent layers by the length of a single carbon-carbon bond. At the extremes are Bernal (or ``ABAB...'') stacking, where the direction of the interlayer shift alternates with each layer, and rhombohedral (or ``ABCABC...'') stacking order where the shifts are always in the same…
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Graphite occurs in a range of metastable stacking orders characterized by both the number and direction of shifts between adjacent layers by the length of a single carbon-carbon bond. At the extremes are Bernal (or ``ABAB...'') stacking, where the direction of the interlayer shift alternates with each layer, and rhombohedral (or ``ABCABC...'') stacking order where the shifts are always in the same direction. However, for an N-layer system, there are in principle $N-1$ unique metastable stacking orders of this type. Recently, it has become clear that stacking order has a strong effect on the low energy electronic band structure with single-layer shifts completely altering the electronic properties. Most experimental work has focused on the extremal stacking orders in large part due to the difficulty of isolating and identifying intermediate orders. Motivated by this challenge, here we describe two atomic force microscopy (AFM) based techniques to unambiguously distinguish stacking orders and defects in graphite flakes. Photo-thermal infrared atomic force microscope (AFM-IR) is able to distinguish stacking orders across multiple IR wavelengths and readily provides absolute contrast via IR spectral analysis. Scanning microwave impedance microscopy (sMIM) can distinguish the relative contrast between Bernal, intermediate and rhombohedral domains. We show that both techniques are well suited to characterizing graphite van der Waals devices, providing high contrast determination of stacking order, subsurface imaging of graphene flakes buried under a hexagonal boron nitride (hBN) dielectric layer, and identifying nanoscale domain walls. Our results pave the way for the reliable fabrication of graphene multilayer devices of definite interlayer registry.
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Submitted 24 April, 2025;
originally announced April 2025.
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Visualizing incommensurate inter-valley coherent states in rhombohedral trilayer graphene
Authors:
Yiwen Liu,
Ambikesh Gupta,
Youngjoon Choi,
Yaar Vituri,
Hari Stoyanov,
Jiewen Xiao,
Yanzhen Wang,
Haibiao Zhou,
Barun Barick,
Takashi Taniguchi,
Kenji Watanabe,
Binghai Yan,
Erez Berg,
Andrea F. Young,
Haim Beidenkopf,
Nurit Avraham
Abstract:
ABC-stacked rhombohedral graphene multilayers exhibit a wide variety of electronic ground states characterized by broken isospin symmetry and superconductivity. Recently, indirect evidence of inter-valley coherent (IVC) order has been reported in rhombohedral trilayer graphene (RTG), with possible implications for the origin of superconductivity. Here, we report the direct visualization of IVC ord…
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ABC-stacked rhombohedral graphene multilayers exhibit a wide variety of electronic ground states characterized by broken isospin symmetry and superconductivity. Recently, indirect evidence of inter-valley coherent (IVC) order has been reported in rhombohedral trilayer graphene (RTG), with possible implications for the origin of superconductivity. Here, we report the direct visualization of IVC order in RTG using scanning tunneling microscopy and spectroscopy. Tuning the chemical potential through the Van Hove singularity near the edge of the valence band, we observe a cascade of phase transitions associated with the formation of half- and quarter-metal states. IVC phases, distinguished by an enlarged real space unit cell, are directly imaged near both the high- and low-density boundaries of the half-metal phase. At high hole density, we precisely reconstruct the IVC band structure through quasiparticle interference. Intriguingly, the charge density modulations reveal a C3-symmetric incommensurate IVC order that agrees with the recent prediction of an IVC-crystal phase. Our findings demonstrate that IVC phases are a widespread symmetry-broken ground state within graphene systems.
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Submitted 17 November, 2024;
originally announced November 2024.
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Superconductivity and quantized anomalous Hall in rhombohedral graphene
Authors:
Youngjoon Choi,
Ysun Choi,
Marco Valentini,
Caitlin L. Patterson,
Ludwig F. W. Holleis,
Owen I. Sheekey,
Hari Stoyanov,
Xiang Cheng,
Takashi Taniguchi,
Kenji Watanabe,
Andrea F. Young
Abstract:
Inducing superconducting correlations in chiral edge states is predicted to generate topologically protected zero energy modes with exotic quantum statistics. Experimental efforts to date have focused on engineering interfaces between superconducting materials typically amorphous metals and semiconducting quantum Hall or quantum anomalous Hall (QAH) systems. However, the interfacial disorder inher…
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Inducing superconducting correlations in chiral edge states is predicted to generate topologically protected zero energy modes with exotic quantum statistics. Experimental efforts to date have focused on engineering interfaces between superconducting materials typically amorphous metals and semiconducting quantum Hall or quantum anomalous Hall (QAH) systems. However, the interfacial disorder inherent in this approach can prevent the formation of isolated topological modes. An appealing alternative is to use low-density flat band materials where the ground state can be tuned between intrinsic superconducting and quantum anomalous Hall states using only the electric field effect. However, quantized transport and superconductivity have not been simultaneously achieved. Here, we show that rhombohedral tetralayer graphene aligned to a hexagonal boron nitride substrate hosts a quantized anomalous Hall state at superlattice filling $ν=-1$ as well as a superconducting state at $ν-3.5$ at zero magnetic field. Remarkably, gate voltage can also be used to actuate nonvolatile switching of the chirality in the quantum anomalous Hall state, allowing, in principle, arbitrarily reconfigurable networks of topological edge modes in locally gated devices. Thermodynamic compressibility measurements further reveal a topologically ordered fractional Chern insulator at $ν=2/3$-also stable at zero magnetic field-enabling proximity coupling between superconductivity and fractionally charged edge modes. Finally, we show that, as in rhombohedral bi- and trilayers, integrating a transition metal dichalcogenide layer to the heterostructure nucleates a new superconducting pocket, while leaving the topology of the $ν=-1$ quantum anomalous Hall state intact. Our results pave the way for a new generation of hybrid interfaces between superconductors and topological edge states in the low-disorder limit.
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Submitted 15 April, 2025; v1 submitted 22 August, 2024;
originally announced August 2024.