Showing 1–12 of 12 results for author: Heuken, M

Intermediate Resistive State in Wafer-Scale MoS${_2}$ Memristors through Lateral Silver Filament Growth for Artificial Synapse Applications

Authors: Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme

Abstract: Memristors based on two-dimensional materials (2DMs) have garnered significant attention due to their fast resistive switching (RS) behavior and atomic-level thickness, which enables low power consumption, making them promising candidates for neuromorphic computing. Among these, memristors based on molybdenum disulfide (MoS${_2}$) have been extensively studied. Their RS has been attributed to the… ▽ More Memristors based on two-dimensional materials (2DMs) have garnered significant attention due to their fast resistive switching (RS) behavior and atomic-level thickness, which enables low power consumption, making them promising candidates for neuromorphic computing. Among these, memristors based on molybdenum disulfide (MoS${_2}$) have been extensively studied. Their RS has been attributed to the formation and rupture of conductive filaments (CFs). However, the underlying mechanism of filament formation remains underexplored, and the inherently stochastic nature of RS leads to high variability and limited reproducibility. Additionally, the lack of scalable fabrication techniques for 2DM-based memristors restricts their integration into standard semiconductor technology. Here, we demonstrate memristors based on metal-organic chemical vapor-deposited MoS${_2}$ on the wafer-scale. Our devices exhibit volatile and nonvolatile RS behavior, tunable by modulating the current compliance. Notably, we observe stable RS characteristics in an intermediate resistive state (IRS), featuring set and reset voltages within $\pm$1 V, an endurance exceeding 2500 cycles in direct current mode, and a state retention over 10${^6}$ s. The experimental data, complemented with simulations, suggest that the IRS originates from the lateral growth of the CF within the MoS${_2}$ layer. Furthermore, the devices successfully emulate synaptic plasticity with current responses on the microsecond timescale, highlighting their potential for large-scale integration in neuromorphic computing architectures. △ Less

Submitted 9 October, 2025; originally announced October 2025.

Influence of Humidity on the Resistive Switching of Hexagonal Boron Nitride-Based Memristors

Authors: Lukas Völkel, Rana Walied Ahmad, Alana Bestaeva, Dennis Braun, Sofía Cruces, Jimin Lee, Sergej Pasko, Simonas Krotkus, Michael Heuken, Stephan Menzel, Max C. Lemme

Abstract: Two-dimensional material-based memristors have recently gained attention as components of future neuromorphic computing concepts. However, their surrounding atmosphere can influence their behavior. In this work, we investigate the resistive switching behavior of hexagonal boron nitride-based memristors with active nickel electrodes under vacuum conditions. Our cells exhibit repeatable, bipolar, no… ▽ More Two-dimensional material-based memristors have recently gained attention as components of future neuromorphic computing concepts. However, their surrounding atmosphere can influence their behavior. In this work, we investigate the resistive switching behavior of hexagonal boron nitride-based memristors with active nickel electrodes under vacuum conditions. Our cells exhibit repeatable, bipolar, nonvolatile switching under voltage stress after initial forming, with a switching window > 10${^3}$ under ambient conditions. However, in a vacuum, the forming is suppressed, and hence, no switching is observed. Compact model simulations can reproduce the set kinetics of our cells under ambient conditions and predict highly suppressed resistive switching in a water-deficient environment, supporting the experimental results. Our findings have important implications for the application of h-BN-based memristors with electrochemically active electrodes since semiconductor chips are typically processed under high vacuum conditions and encapsulated to protect them from atmospheric influences. △ Less

Submitted 20 January, 2025; originally announced January 2025.

Comments: 18 pages, 4 Figures, 1 Table

Journal ref: npj 2D Materials and Applications, 9, 41, 2025

Dry Transfer Based on PMMA and Thermal Release Tape for Heterogeneous Integration of 2D-TMDC Layers

Authors: Amir Ghiami, Hleb Fiadziushkin, Tianyishan Sun, Songyao Tang, Yibing Wang, Eva Mayer, Jochen M. Schneider, Agata Piacentini, Max C. Lemme, Michael Heuken, Holger Kalisch, Andrei Vescan

Abstract: A reliable and scalable transfer of 2D-TMDCs (two-dimensional transition metal dichalcogenides) from the growth substrate to a target substrate with high reproducibility and yield is a crucial step for device integration. In this work, we have introduced a scalable dry-transfer approach for 2D-TMDCs grown by MOCVD (metal-organic chemical vapor deposition) on sapphire. Transfer to a silicon/silicon… ▽ More A reliable and scalable transfer of 2D-TMDCs (two-dimensional transition metal dichalcogenides) from the growth substrate to a target substrate with high reproducibility and yield is a crucial step for device integration. In this work, we have introduced a scalable dry-transfer approach for 2D-TMDCs grown by MOCVD (metal-organic chemical vapor deposition) on sapphire. Transfer to a silicon/silicon dioxide (Si/SiO$_2$) substrate is performed using PMMA (poly(methyl methacrylate)) and TRT (thermal release tape) as sacrificial layer and carrier, respectively. Our proposed method ensures a reproducible peel-off from the growth substrate and better preservation of the 2D-TMDC during PMMA removal in solvent, without compromising its adhesion to the target substrate. A comprehensive comparison between the dry method introduced in this work and a standard wet transfer based on potassium hydroxide (KOH) solution shows improvement in terms of cleanliness and structural integrity for dry-transferred layer, as evidenced by X-ray photoemission and Raman spectroscopy, respectively. Moreover, fabricated field-effect transistors (FETs) demonstrate improvements in subthreshold slope, maximum drain current and device-to-device variability. The dry-transfer method developed in this work enables large-area integration of 2D-TMDC layers into (opto)electronic components with high reproducibility, while better preserving the as-grown properties of the layers. △ Less

Submitted 3 December, 2024; originally announced December 2024.

Comments: 29 pages

Volatile MoS${_2}$ Memristors with Lateral Silver Ion Migration for Artificial Neuron Applications

Authors: Sofia Cruces, Mohit D. Ganeriwala, Jimin Lee, Lukas Völkel, Dennis Braun, Annika Grundmann, Ke Ran, Enrique G. Marín, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Andrés Godoy, Alwin Daus, Max C. Lemme

Abstract: Layered two-dimensional (2D) semiconductors have shown enhanced ion migration capabilities along their van der Waals (vdW) gaps and on their surfaces. This effect can be employed for resistive switching (RS) in devices for emerging memories, selectors, and neuromorphic computing. To date, all lateral molybdenum disulfide (MoS${_2}$)-based volatile RS devices with silver (Ag) ion migration have bee… ▽ More Layered two-dimensional (2D) semiconductors have shown enhanced ion migration capabilities along their van der Waals (vdW) gaps and on their surfaces. This effect can be employed for resistive switching (RS) in devices for emerging memories, selectors, and neuromorphic computing. To date, all lateral molybdenum disulfide (MoS${_2}$)-based volatile RS devices with silver (Ag) ion migration have been demonstrated using exfoliated, single-crystal MoS${_2}$ flakes requiring a forming step to enable RS. Here, we present volatile RS with multilayer MoS${_2}$ grown by metal-organic chemical vapor deposition (MOCVD) with repeatable forming-free operation. The devices show highly reproducible volatile RS with low operating voltages of approximately 2 V and fast switching times down to 130 ns considering their micrometer scale dimensions. We investigate the switching mechanism based on Ag ion surface migration through transmission electron microscopy, electronic transport modeling, and density functional theory. Finally, we develop a physics-based compact model and explore the implementation of our volatile memristors as artificial neurons in neuromorphic systems. △ Less

Submitted 19 August, 2024; originally announced August 2024.

Comments: 43 pages

Journal ref: Small Science, 5(5), 2400523, 2025

Tunable Doping and Mobility Enhancement in 2D Channel Field-Effect Transistors via Damage-Free Atomic Layer Deposition of AlOX Dielectrics

Authors: Ardeshir Esteki, Sarah Riazimehr, Agata Piacentini, Harm Knoops, Bart Macco, Martin Otto, Gordon Rinke, Zhenxing Wang, Ke Ran, Joachim Mayer, Annika Grundmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Daniel Neumaier, Alwin Daus, Max C. Lemme

Abstract: Two-dimensional materials (2DMs) have been widely investigated because of their potential for heterogeneous integration with modern electronics. However, several major challenges remain, such as the deposition of high-quality dielectrics on 2DMs and the tuning of the 2DM doping levels. Here, we report a scalable plasma-enhanced atomic layer deposition (PEALD) process for direct deposition of a non… ▽ More Two-dimensional materials (2DMs) have been widely investigated because of their potential for heterogeneous integration with modern electronics. However, several major challenges remain, such as the deposition of high-quality dielectrics on 2DMs and the tuning of the 2DM doping levels. Here, we report a scalable plasma-enhanced atomic layer deposition (PEALD) process for direct deposition of a nonstoichiometric aluminum oxide (AlOX) dielectric, overcoming the damage issues associated with conventional methods. Furthermore, we control the thickness of the dielectric layer to systematically tune the doping level of 2DMs. The experimental results demonstrate successful deposition without detectable damage, as confirmed by Raman spectroscopy and electrical measurements. Our method enables tuning of the Dirac and threshold voltages of back-gated graphene and MoS${_2}$ field-effect transistors (FETs), respectively, while also increasing the charge carrier mobility in both device types. We further demonstrate the method in top-gated MoS${_2}$ FETs with double-stack dielectric layers (AlOX+Al${_2}$O${_3}$), achieving critical breakdown field strengths of 7 MV/cm and improved mobility compared with the back gate configuration. In summary, we present a PEALD process that offers a scalable and low-damage solution for dielectric deposition on 2DMs, opening new possibilities for precise tuning of device characteristics in heterogeneous electronic circuits. △ Less

Submitted 13 August, 2024; originally announced August 2024.

Comments: 28 pages

Multiparameter admittance spectroscopy for investigating defects in MoS${_2}$ thin film MOSFETs

Authors: Eros Reato, Ardeshir Esteki, Benny Ku, Zhenxing Wang, Michael Heuken, Max C. Lemme, Olof Engström

Abstract: A method for assessing the quality of electronic material properties of thin-film metal oxide semiconductor field-effect transistors (MOSFETs) is presented. By investigating samples with MOCVD-grown MoS${_2}$ channels exposed to atmospheric conditions, the existence of electron traps in MoS${_2}$ and at the interface between the gate insulator and the thin-film MoS${_2}$ are revealed. Differential… ▽ More A method for assessing the quality of electronic material properties of thin-film metal oxide semiconductor field-effect transistors (MOSFETs) is presented. By investigating samples with MOCVD-grown MoS${_2}$ channels exposed to atmospheric conditions, the existence of electron traps in MoS${_2}$ and at the interface between the gate insulator and the thin-film MoS${_2}$ are revealed. Differential conductance and capacitance data of the transistor channels are plotted as 3D surfaces on a base plane spanned by the measurement frequency versus the gate voltage. The existence of defects is confirmed by comparison with ideal results from a theoretical model. △ Less

Submitted 10 July, 2024; originally announced July 2024.

Comments: 24 pages

Journal ref: IEEE Transactions on Electron Devices, 72, 3, 1506-1513, 2025

A Small Step for Epitaxy, a Large Step Towards Twist Angle Control in 2D Heterostructures

Authors: Oliver Maßmeyer, Jürgen Belz, Badrosadat Ojaghi Dogahe, Maximilian Widemann, Robin Günkel, Johannes Glowatzki, Max Bergmann, Sergej Pasko, Simonas Krotkus, Michael Heuken, Andreas Beyer, Kerstin Volz

Abstract: Two-dimensional (2D) materials have received a lot of interest over the past decade. Especially van der Waals (vdW) 2D materials, such as transition metal dichalcogenides (TMDCs), and their heterostructures exhibit semiconducting properties that make them highly suitable for novel device applications. Controllable mixing and matching of the 2D materials with different properties and a precise cont… ▽ More Two-dimensional (2D) materials have received a lot of interest over the past decade. Especially van der Waals (vdW) 2D materials, such as transition metal dichalcogenides (TMDCs), and their heterostructures exhibit semiconducting properties that make them highly suitable for novel device applications. Controllable mixing and matching of the 2D materials with different properties and a precise control of the in-plane twist angle in these heterostructures are essential to achieve superior properties and need to be established through large-scale device fabrication. To gain fundamental insight into the control of these twist angles, 2D heterostructures of tungsten disulfide (WS2) and graphene grown by bottom-up synthesis via metal-organic chemical vapor deposition (MOCVD) are investigated using a scanning transmission electron microscope (STEM). Specifically, the combination of conventional high-resolution imaging with scanning nano beam diffraction (SNBD) using advanced 4D STEM techniques is used to analyze moiré structures. The latter technique is used to reveal the epitaxial alignment within the WS2/Gr heterostructure, showing a direct influence of the underlying graphene layers on the moiré formation in the subsequent WS2 layers. In particular, the importance of grain boundaries within the underlying WS2 and Gr layers for the formation of moiré patterns with rotation angles below 2° is discussed. △ Less

Submitted 8 February, 2024; originally announced February 2024.

Comments: 21 pages including the main article and supporting information, 5 figures (main text), 14 figures (supporting), submitted to Advanced Materials - Wiley

Button Shear Testing for Adhesion Measurements of 2D Materials

Authors: Josef Schätz, Navin Nayi, Jonas Weber, Christoph Metzke, Sebastian Lukas, Agata Piacentini, Eros Reato, Jürgen Walter, Tim Schaffus, Fabian Streb, Annika Grundmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Stephan Pindl, Max C. Lemme

Abstract: Two-dimensional (2D) materials are considered for numerous applications in microelectronics, although several challenges remain when integrating them into functional devices. Weak adhesion is one of them, caused by their chemical inertness. Quantifying the adhesion of 2D materials on three-dimensional surfaces is, therefore, an essential step toward reliable 2D device integration. To this end, but… ▽ More Two-dimensional (2D) materials are considered for numerous applications in microelectronics, although several challenges remain when integrating them into functional devices. Weak adhesion is one of them, caused by their chemical inertness. Quantifying the adhesion of 2D materials on three-dimensional surfaces is, therefore, an essential step toward reliable 2D device integration. To this end, button shear testing is proposed and demonstrated as a method for evaluating the adhesion of 2D materials with the examples of graphene and hexagonal boron nitride (hBN), molybdenum disulfide, and tungsten diselenide on silicon dioxide (SiO${_2}$) and silicon nitride substrates. We propose a fabrication process flow for polymer buttons on the 2D materials and establish suitable button dimensions and testing shear speeds. We show with our quantitative data that low substrate roughness and oxygen plasma treatments on the substrates before 2D material transfer result in higher shear strengths. Thermal annealing increases the adhesion of hBN on SiO${_2}$ and correlates with the thermal interface resistance between these materials. This establishes button shear testing as a reliable and repeatable method for quantifying adhesion of 2D materials. △ Less

Submitted 13 March, 2024; v1 submitted 11 September, 2023; originally announced September 2023.

Comments: 51 pages

Journal ref: Nature Communications, 15: 2430, 2024

Comprehensive evidence of lasing from a 2D material enabled by a dual-resonance metasurface

Authors: Isabel Barth, Manuel Deckart, Donato Conteduca, Guilherme S Arruda, Zeki Hayran, Sergej Pasko, Simonas Krotkus, Michael Heuken, Francesco Monticone, Thomas F Krauss, Emiliano R Martins, Yue Wang

Abstract: Semiconducting transition metal dichalcogenides (TMDs) have gained significant attention as a gain medium for nanolasers, owing to their unique ability to be easily placed and stacked on virtually any substrate. However, the atomically thin nature of the active material in existing TMD nanolasers presents a challenge, as their limited output power makes it difficult to distinguish between true las… ▽ More Semiconducting transition metal dichalcogenides (TMDs) have gained significant attention as a gain medium for nanolasers, owing to their unique ability to be easily placed and stacked on virtually any substrate. However, the atomically thin nature of the active material in existing TMD nanolasers presents a challenge, as their limited output power makes it difficult to distinguish between true laser operation and other "laser-like" phenomena. Here, we present comprehensive evidence of lasing from a CVD-grown tungsten disulphide (WS$_2$) monolayer. The monolayer is placed on a dual-resonance dielectric metasurface with a rectangular lattice designed to enhance both absorption and emission; resulting in an ultralow threshold operation (threshold <1 W/cm$^2$). We provide a thorough study of the laser performance at room temperature, paying special attention to directionality, output power, and spatial coherence. Notably, our lasers demonstrated a coherence length of over 30 $μ$m, which is several times greater than what has been reported for 2D material lasers so far. Our realisation of a single-mode laser from a wafer-scale CVD-grown monolayer presents exciting opportunities for integration and the development of novel applications. △ Less

Submitted 20 June, 2023; originally announced June 2023.

Understanding the impact of heavy ions and tailoring the optical properties of large-area Monolayer WS2 using Focused Ion Beam

Authors: Fahrettin Sarcan, Nicola J. Fairbairn, Panaiot Zotev, Toby Severs-Millard, Daniel Gillard, Xiaochen Wang, Ben Conran, Michael Heuken, Ayse Erol, Alexander I. Tartakovskii, Thomas F. Krauss, Gordon J. Hedley, Yue Wang

Abstract: Focused ion beam (FIB) has been used as an effective tool for precise nanoscale fabrication. It has recently been employed to tailor defect engineering in functional nanomaterials such as two-dimensional transition metal dichalcogenides (TMDCs), providing desirable properties in TMDC-based optoelectronic devices. However, the damage caused by the FIB irradiation and milling process to these delica… ▽ More Focused ion beam (FIB) has been used as an effective tool for precise nanoscale fabrication. It has recently been employed to tailor defect engineering in functional nanomaterials such as two-dimensional transition metal dichalcogenides (TMDCs), providing desirable properties in TMDC-based optoelectronic devices. However, the damage caused by the FIB irradiation and milling process to these delicate atomically thin materials, especially in the extended area, has not yet been elaboratively characterised. Understanding the correlation between lateral ion beam effects and optical properties of 2D TMDCs is crucial in designing and fabricating high-performance optoelectronic devices. In this work, we investigate lateral damage in large-area monolayer WS2 caused by the gallium focused ion beam milling process. Three distinct zones away from the milling location are identified and characterised via steady-state photoluminescence (PL) and Raman spectroscopy. An unexpected bright ring-shaped emission around the milled location has been revealed by time-resolved PL spectroscopy with high spatial resolution. Our finding opens new avenues for tailoring the optical properties of TMDCs by charge and defect engineering via focused ion beam lithography. Furthermore, our study provides evidence that while some localised damage is inevitable, distant destruction can be eliminated by reducing the ion beam current. It paves the way for the use of FIB to create nanostructures in 2D TMDCs, as well as the design and realisation of optoelectrical devices on a wafer scale. △ Less

Submitted 9 October, 2022; originally announced October 2022.

Zero Bias Power Detector Circuits based on MoS$_2$ Field Effect Transistors on Wafer-Scale Flexible Substrates

Authors: Eros Reato, Paula Palacios, Burkay Uzlu, Mohamed Saeed, Annika Grundmann, Zhenyu Wang, Daniel S. Schneider, Zhenxing Wang, Michael Heuken, Holger Kalisch, Andrei Vescan, Alexandra Radenovic, Andras Kis, Daniel Neumaier, Renato Negra, Max C. Lemme

Abstract: We demonstrate the design, fabrication, and characterization of wafer-scale, zero-bias power detectors based on two-dimensional MoS$_2$ field effect transistors (FETs). The MoS$_2$ FETs are fabricated using a wafer-scale process on 8 $μ$m thick polyimide film, which in principle serves as flexible substrate. The performances of two CVD-MoS$_2$ sheets, grown with different processes and showing dif… ▽ More We demonstrate the design, fabrication, and characterization of wafer-scale, zero-bias power detectors based on two-dimensional MoS$_2$ field effect transistors (FETs). The MoS$_2$ FETs are fabricated using a wafer-scale process on 8 $μ$m thick polyimide film, which in principle serves as flexible substrate. The performances of two CVD-MoS$_2$ sheets, grown with different processes and showing different thicknesses, are analyzed and compared from the single device fabrication and characterization steps to the circuit level. The power detector prototypes exploit the nonlinearity of the transistors above the cut-off frequency of the devices. The proposed detectors are designed employing a transistor model based on measurement results. The fabricated circuits operate in Ku-band between 12 and 18 GHz, with a demonstrated voltage responsivity of 45 V/W at 18 GHz in the case of monolayer MoS2 and 104 V/W at 16 GHz in the case of multilayer MoS$_2$, both achieved without applied DC bias. They are the best performing power detectors fabricated on flexible substrate reported to date. The measured dynamic range exceeds 30 dB outperforming other semiconductor technologies like silicon complementary metal oxide semiconductor (CMOS) circuits and GaAs Schottky diodes. △ Less

Submitted 9 April, 2022; v1 submitted 9 February, 2022; originally announced February 2022.

Comments: 28 pages

Journal ref: Advanced Materials, 202108469, 2022

Vertical GaN Devices: Process and Reliability

Authors: Shuzhen You, Karen Geens, Matteo Borga, Hu Liang, Herwig Hahn, Dirk Fahle, Michael Heuken, Kalparupa Mukherjee, Carlo De Santi, Matteo Meneghini, Enrico Zanoni, Martin Berg, Peter Ramvall, Ashutosh Kumar, Mikael T. Björk, B. Jonas Ohlsson, Stefaan Decoutere

Abstract: This paper reviews recent progress and key challenges in process and reliability for high-performance vertical GaN transistors and diodes, focusing on the 200 mm CMOS-compatible technology. We particularly demonstrated the potential of using 200 mm diameter CTE matched substrates for vertical power transistors, and gate module optimizations for device robustness. An alternative technology path bas… ▽ More This paper reviews recent progress and key challenges in process and reliability for high-performance vertical GaN transistors and diodes, focusing on the 200 mm CMOS-compatible technology. We particularly demonstrated the potential of using 200 mm diameter CTE matched substrates for vertical power transistors, and gate module optimizations for device robustness. An alternative technology path based on coalescence epitaxy of GaN-on-Silicon is also introduced, which could enable thick drift layers of very low dislocation density. △ Less

Submitted 7 July, 2021; v1 submitted 6 July, 2021; originally announced July 2021.

Comments: ["European Union (EU)" & "Horizon 2020"]["Euratom" & Euratom research & training programme 2014-2018"][ECSEL Joint Undertaking (JU)][UltimateGaN][grant agreement No 826392]