Showing 1–19 of 19 results for author: Hu, E L

Resolving and resetting the charge environment of single T-centers in silicon p-i-n waveguides

Authors: Chaoshen Zhang, Hanbin Song, Lukasz Komza, Aaron M. Day, Enrique Garcia, Donald Witt, Mihir K. Bhaskar, Alp Sipahigil, Evelyn L. Hu

Abstract: The silicon T-center is a telecom-band spin-photon interface in a manufacturable photonics platform. In nanophotonic devices, however, its optical linewidth is broadened by a fluctuating charge environment, limiting photon indistinguishability for quantum networking. Here, we address this challenge through characterization and suppression of the local charge-noise of single T-centers in lateral p-… ▽ More The silicon T-center is a telecom-band spin-photon interface in a manufacturable photonics platform. In nanophotonic devices, however, its optical linewidth is broadened by a fluctuating charge environment, limiting photon indistinguishability for quantum networking. Here, we address this challenge through characterization and suppression of the local charge-noise of single T-centers in lateral p-i-n waveguides, demonstrating an unheralded method of T-center optical linewidth narrowing. Above-band illumination resets the charge environment, neutralizing the local field and suppressing spectral diffusion. Across 46 emitters this reset narrows the median linewidth 3.5-fold to 0.57(11) GHz, and an optimized emitter reaches 128(22) MHz, the narrowest unheralded linewidth reported for an integrated T-center. The narrowed transition supports coherent optical Rabi oscillations with a coherence time of 20(2) ns. Finally, we perform Stark-shift tuning using the p-i-n junction, and read out the local electric field and the charge-noise width at 15 mK. An analytical model of proximal surfaces, bulk, and junction field effects provides good agreement with our findings. Our multi-pronged characterization of the nanophotonic-integrated T-center charge environment enables future device optimization toward scalable quantum interconnects. △ Less

Submitted 16 August, 2026; originally announced August 2026.

Comments: 17 pages, 6 figures

A Suspended 4H-Silicon Carbide Membrane Platform for Defect Integration into Quantum Devices

Authors: Amberly H. Xie, Aaron M. Day, Jonathan R. Dietz, Chang Jin, Chaoshen Zhang, Eliana Mann, Zhujing Xu, Marko Loncar, Evelyn L. Hu

Abstract: 4H-silicon carbide is a promising platform for solid-state quantum technology due to its commercial availability as a wide bandgap semiconductor and ability to host numerous spin-active color centers. Integrating color centers into suspended nanodevices enhances defect control and readout--key advances needed to fully harness their potential. However, challenges in developing robust fabrication pr… ▽ More 4H-silicon carbide is a promising platform for solid-state quantum technology due to its commercial availability as a wide bandgap semiconductor and ability to host numerous spin-active color centers. Integrating color centers into suspended nanodevices enhances defect control and readout--key advances needed to fully harness their potential. However, challenges in developing robust fabrication processes for 4H-SiC thin films--due to the material's chemical and mechanical stability--limit their implementation in quantum applications. Here, we report on a new fabrication approach that first synthesizes suspended thin films from a monolithic platform, then patterns devices. With this technique, we fabricate and characterize structures tailored for defect integration, demonstrating 1D photonic crystal cavities, with and without waveguide interfaces, and lithium niobate on 4H-SiC acoustic cavities. This approach allows for greater fabrication flexibility--supporting high temperature annealing and heterogeneous material platform compatibility--providing a versatile platform for scalable fabrication of 4H-SiC devices for quantum technologies. △ Less

Submitted 14 August, 2025; originally announced August 2025.

Selective Undercut of Undoped Optical Membranes for Spin-Active Color Centers in 4H-SiC

Authors: Jonathan R. Dietz, Aaron M. Day, Amberly Xie, Evelyn L. Hu

Abstract: Silicon carbide (SiC) is a semiconductor used in quantum information processing, microelectromechanical systems, photonics, power electronics, and harsh environment sensors. However, its high temperature stability, high breakdown voltage, wide bandgap, and high mechanical strength are accompanied by a chemical inertness which makes complex micromachining difficult. Photoelectrochemical etching is… ▽ More Silicon carbide (SiC) is a semiconductor used in quantum information processing, microelectromechanical systems, photonics, power electronics, and harsh environment sensors. However, its high temperature stability, high breakdown voltage, wide bandgap, and high mechanical strength are accompanied by a chemical inertness which makes complex micromachining difficult. Photoelectrochemical etching is a simple, rapid means of wet processing SiC, including the use of dopant selective etch stops that take advantage of mature SiC homoepitaxy. However, dopant selective photoelectrochemical etching typically relies on highly doped material, which poses challenges for device applications such as quantum defects and photonics that benefit from low doping to produce robust emitter properties and high optical transparency. In this work, we develop a new, selective photoelectrochemical etching process that relies not on high doping but on the electrical depletion of a fabricated diode structure, allowing the selective etching of an n-doped substrate wafer versus an undoped epitaxial ($N_a=1(10)^{14}cm^{-3}$) device layer. We characterize the photo-response and photoelectrochemical etching behavior of the diode under bias and use those insights to suspend large ($>100μm^2$) undoped membranes of SiC. We further characterize the compatibility of membranes with quantum emitters, performing comparative spin spectroscopy between undoped and highly doped membrane structures, finding the use of undoped material improves ensemble spin lifetime by $>3x$. This work enables the fabrication of high-purity suspended thin films suitable for scalable photonics, mechanics, and quantum technologies in SiC. △ Less

Submitted 11 June, 2024; originally announced June 2024.

Comments: 12 pages, 4 figures

Three Dimensional Reconfigurable Optical Singularities in Bilayer Photonic Crystals

Authors: Xueqi Ni, Yuan Liu, Beicheng Lou, Mingjie Zhang, Evelyn L. Hu, Shanhui Fan, Eric Mazur, Haoning Tang

Abstract: Metasurfaces and photonic crystals have revolutionized classical and quantum manipulation of light, and opened the door to studying various optical singularities related to phases and polarization states. However, traditional nanophotonic devices lack reconfigurability, hindering the dynamic switching and optimization of optical singularities. This paper delves into the underexplored concept of tu… ▽ More Metasurfaces and photonic crystals have revolutionized classical and quantum manipulation of light, and opened the door to studying various optical singularities related to phases and polarization states. However, traditional nanophotonic devices lack reconfigurability, hindering the dynamic switching and optimization of optical singularities. This paper delves into the underexplored concept of tunable bilayer photonic crystals (BPhCs), which offer rich interlayer coupling effects. Utilizing silicon nitride-based BPhCs, we demonstrate tunable bidirectional and unidirectional polarization singularities, along with spatiotemporal phase singularities. Leveraging these tunable singularities, we achieve dynamic modulation of bound-state-in-continuum states, unidirectional guided resonances, and both longitudinal and transverse orbital angular momentum. Our work paves the way for multidimensional control over polarization and phase, inspiring new directions in ultrafast optics, optoelectronics, and quantum optics. △ Less

Submitted 20 November, 2023; originally announced November 2023.

Electrical Manipulation of Telecom Color Centers in Silicon

Authors: Aaron M. Day, Madison Sutula, Jonathan R. Dietz, Alexander Raun, Denis D. Sukachev, Mihir K. Bhaskar, Evelyn L. Hu

Abstract: Silicon color centers have recently emerged as promising candidates for commercial quantum technology, yet their interaction with electric fields has yet to be investigated. In this paper, we demonstrate electrical manipulation of telecom silicon color centers by fabricating lateral electrical diodes with an integrated G center ensemble in a commercial silicon on insulator wafer. The ensemble opti… ▽ More Silicon color centers have recently emerged as promising candidates for commercial quantum technology, yet their interaction with electric fields has yet to be investigated. In this paper, we demonstrate electrical manipulation of telecom silicon color centers by fabricating lateral electrical diodes with an integrated G center ensemble in a commercial silicon on insulator wafer. The ensemble optical response is characterized under application of a reverse-biased DC electric field, observing both 100% modulation of fluorescence signal, and wavelength redshift of approximately 1.4 GHz/V above a threshold voltage. Finally, we use G center fluorescence to directly image the electric field distribution within the devices, obtaining insight into the spatial and voltage-dependent variation of the junction depletion region and the associated mediating effects on the ensemble. Strong correlation between emitter-field coupling and generated photocurrent is observed. Our demonstration enables electrical control and stabilization of semiconductor quantum emitters. △ Less

Submitted 14 November, 2023; originally announced November 2023.

Deterministic Laser Writing of Spin Defects in Nanophotonic Cavities

Authors: Aaron M. Day, Jonathan R. Dietz, Madison Sutula, Matthew Yeh, Evelyn L. Hu

Abstract: High-yield engineering and characterization of cavity-emitter coupling is an outstanding challenge in developing scalable quantum network nodes. Ex-situ defect formation processes prevent real-time defect-cavity characterization, and previous in-situ methods require further processing to improve emitter properties or are limited to bulk substrates. We demonstrate direct laser-writing of cavity-int… ▽ More High-yield engineering and characterization of cavity-emitter coupling is an outstanding challenge in developing scalable quantum network nodes. Ex-situ defect formation processes prevent real-time defect-cavity characterization, and previous in-situ methods require further processing to improve emitter properties or are limited to bulk substrates. We demonstrate direct laser-writing of cavity-integrated spin defects using a nanosecond-pulsed above-bandgap laser. Photonic crystal cavities in 4H-silicon carbide serve as a nanoscope monitoring silicon monovacancy (V$_{Si}^-$) defect formation within the $100~\text{nm}^3$ cavity mode volume. We observe defect spin resonance, cavity-integrated photoluminescence and excited-state lifetimes consistent with conventional defect formation methods, without need for post-irradiation thermal annealing. We further find an exponential reduction in excited-state lifetime at fluences approaching the cavity amorphization threshold, and show single-shot local annealing of the intrinsic background defects at the V$_{Si}^-$ formation sites. This real-time in-situ method of localized defect formation, paired with demonstration of cavity-integrated defect spins, marks an important step in engineering cavity-emitter coupling for quantum networking. △ Less

Submitted 5 October, 2022; v1 submitted 30 September, 2022; originally announced October 2022.

Comments: 8 pages, 4 figures

Spin-Acoustic Control of Silicon Vacancies in 4H Silicon Carbide

Authors: Jonathan R. Dietz, Boyang Jiang, Aaron M. Day, Sunil A. Bhave, Evelyn L. Hu

Abstract: We demonstrate direct, acoustically mediated spin control of naturally occurring negatively charged silicon monovacancies (V$_{Si}^-$) in a high quality factor Lateral Overtone Bulk Acoustic Resonator fabricated out of high purity semi-insulating 4H-Silicon Carbide. We compare the frequency response of silicon monovacancies to a radio-frequency magnetic drive via optically-detected magnetic resona… ▽ More We demonstrate direct, acoustically mediated spin control of naturally occurring negatively charged silicon monovacancies (V$_{Si}^-$) in a high quality factor Lateral Overtone Bulk Acoustic Resonator fabricated out of high purity semi-insulating 4H-Silicon Carbide. We compare the frequency response of silicon monovacancies to a radio-frequency magnetic drive via optically-detected magnetic resonance and the resonator's own radio-frequency acoustic drive via optically-detected spin acoustic resonance and observe a narrowing of the spin transition to nearly the linewidth of the driving acoustic resonance. We show that acoustic driving can be used at room temperature to induce coherent population oscillations. Spin acoustic resonance is then leveraged to perform stress metrology of the lateral overtone bulk acoustic resonator, showing for the first time the stress distribution inside a bulk acoustic wave resonator. Our work can be applied to the characterization of high quality-factor micro-electro-mechanical systems and has the potential to be extended to a mechanically addressable quantum memory. △ Less

Submitted 30 May, 2022; originally announced May 2022.

Optical and Strain Stabilization of Point Defects in Silicon Carbide

Authors: Jonathan R. Dietz, Evelyn L. Hu

Abstract: The photoluminescence and spin properties of ensembles of color centers in silicon carbide are enhanced by fabricating optically isolated slab waveguide structures and carefully controlling annealing and cooling conditions. We find that the photoluminescence signal of an ensemble of implanted defects is enhanced in slab waveguides by an order of magnitude over identically implanted bulk defects. T… ▽ More The photoluminescence and spin properties of ensembles of color centers in silicon carbide are enhanced by fabricating optically isolated slab waveguide structures and carefully controlling annealing and cooling conditions. We find that the photoluminescence signal of an ensemble of implanted defects is enhanced in slab waveguides by an order of magnitude over identically implanted bulk defects. The slab waveguide-enhanced photoluminescence of several defect species is used to study recombination and diffusion in the presence of thermal annealing with both rapid quench cooling and a longer return to ambient conditions. The confined mechanical geometry of the thin film is exploited to measure the spin-strain coupling of the negatively charged silicon monovacancy. The methods in this work can be used to exercise greater control on near-surface emitters in silicon carbide and better understand and control the effects of strain on spin measurements of silicon carbide based color centers. △ Less

Submitted 9 February, 2022; originally announced February 2022.

Comments: 13 pages, 4 figures

Enhanced cavity coupling to silicon monovacancies in 4-H Silicon Carbide using below bandgap laser irradiation and low temperature thermal annealing

Authors: Mena N. Gadalla, Andrew S. Greenspon, Rodrick Kuate Defo, Xingyu Zhang, Evelyn L. Hu

Abstract: The negatively charged silicon monovacancy $V_{Si}^-$ in 4H-silicon carbide (SiC) is a spin-active point defect that has the potential to act as a qubit or quantum memory in solid-state quantum computation applications. Photonic crystal cavities (PCCs) can augment the optical emission of the $V_{Si}^-$, yet fine-tuning the defect-cavity interaction remains challenging. We report on two post-fabric… ▽ More The negatively charged silicon monovacancy $V_{Si}^-$ in 4H-silicon carbide (SiC) is a spin-active point defect that has the potential to act as a qubit or quantum memory in solid-state quantum computation applications. Photonic crystal cavities (PCCs) can augment the optical emission of the $V_{Si}^-$, yet fine-tuning the defect-cavity interaction remains challenging. We report on two post-fabrication processes that result in enhancement of the $V_1^{'}$ optical emission from our 1-dimensional PCCs, indicating improved coupling between the ensemble of silicon vacancies and the PCC. One process involves below bandgap illumination at 785 nm and 532 nm wavelengths and above bandgap illumination at 325 nm, carried out at times ranging from a few minutes to several hours. The other process is thermal annealing at $100^o C$, carried out over 20 minutes. Every process except above bandgap irradiation improves the defect-cavity coupling, manifested in augmented Purcell factor enhancement of the $V_1^{'}$ zero phonon line at 77K. The below bandgap laser process is attributed to a modification of charge states, changing the relative ratio of $V_{Si}^0$ (dark state) to $V_{Si}^-$ (bright state), while the thermal annealing process may be explained by diffusion of carbon interstitials, $C_i$, that subsequently recombine with other defects to create additional $V_{Si}^-$s. Above bandgap radiation is proposed to initially convert $V_{Si}^{0}$ to $V_{Si}^-$, but also may lead to diffusion of $V_{Si}^-$ away from the probe area, resulting in an irreversible reduction of the optical signal. Observations of the PCC spectra allow insights into defect modifications and interactions within a controlled, designated volume and indicate pathways to improve defect-cavity interactions. △ Less

Submitted 23 September, 2020; v1 submitted 25 August, 2020; originally announced August 2020.

Comments: 21 pages, 8 figures

Selective Purcell enhancement of two closely linked zero-phonon transitions of a silicon carbide color center

Authors: David O. Bracher, Xingyu Zhang, Evelyn L. Hu

Abstract: Point defects in silicon carbide are rapidly becoming a platform of great interest for single photon generation, quantum sensing, and quantum information science. Photonic crystal cavities (PCC) can serve as an efficient light-matter interface both to augment the defect emission and to aid in studying the defects' properties. In this work, we fabricate 1D nanobeam PCCs in 4H-silicon carbide with e… ▽ More Point defects in silicon carbide are rapidly becoming a platform of great interest for single photon generation, quantum sensing, and quantum information science. Photonic crystal cavities (PCC) can serve as an efficient light-matter interface both to augment the defect emission and to aid in studying the defects' properties. In this work, we fabricate 1D nanobeam PCCs in 4H-silicon carbide with embedded silicon vacancy centers. These cavities are used to achieve Purcell enhancement of two closely spaced defect zero-phonon lines (ZPL). Enhancements of >80-fold are measured using multiple techniques. Additionally, the nature of the cavity coupling to the different ZPLs is examined. △ Less

Submitted 13 September, 2016; originally announced September 2016.

Comments: 15 pages, 5 figures

Deterministic coupling of delta-doped NV centers to a nanobeam photonic crystal cavity

Authors: Jonathan C. Lee, David O. Bracher, Shanying Cui, Kenichi Ohno, Claire A. McLellan, Xingyu Zhang, Paolo Andrich, Benjamin Aleman, Kasey J. Russell, Andrew P. Magyar, Igor Aharonovich, Ania Bleszynski Jayich, David Awschalom, Evelyn L. Hu

Abstract: The negatively-charged nitrogen vacancy center (NV) in diamond has generated significant interest as a platform for quantum information processing and sensing in the solid state. For most applications, high quality optical cavities are required to enhance the NV zero-phonon line (ZPL) emission. An outstanding challenge in maximizing the degree of NV-cavity coupling is the deterministic placement o… ▽ More The negatively-charged nitrogen vacancy center (NV) in diamond has generated significant interest as a platform for quantum information processing and sensing in the solid state. For most applications, high quality optical cavities are required to enhance the NV zero-phonon line (ZPL) emission. An outstanding challenge in maximizing the degree of NV-cavity coupling is the deterministic placement of NVs within the cavity. Here, we report photonic crystal nanobeam cavities coupled to NVs incorporated by a delta-doping technique that allows nanometer-scale vertical positioning of the emitters. We demonstrate cavities with Q up to ~24,000 and mode volume V ~ $0.47(λ/n)^{3}$ as well as resonant enhancement of the ZPL of an NV ensemble with Purcell factor of ~20. Our fabrication technique provides a first step towards deterministic NV-cavity coupling using spatial control of the emitters. △ Less

Submitted 3 November, 2014; originally announced November 2014.

Comments: 13 pages, 3 figures

Distinctive Signature of Indium Gallium Nitride Quantum Dot Lasing in Microdisks Cavities

Authors: Alexander Woolf, Tim Puchtler, Igor Aharonovich, Tongtong Zhu, Nan Niu, Danqing Wang, Rachel A. Oliver, Evelyn L. Hu

Abstract: Low threshold lasers realized within compact, high quality optical cavities enable a variety of nanophotonics applications. Gallium nitride (GaN) materials containing indium gallium nitride (InGaN) quantum dots and quantum wells offer an outstanding platform to study light matter interactions and realize practical devices such as efficient light emitting diodes and nanolasers. Despite progress in… ▽ More Low threshold lasers realized within compact, high quality optical cavities enable a variety of nanophotonics applications. Gallium nitride (GaN) materials containing indium gallium nitride (InGaN) quantum dots and quantum wells offer an outstanding platform to study light matter interactions and realize practical devices such as efficient light emitting diodes and nanolasers. Despite progress in the growth and characterization of InGaN quantum dots, their advantages as the gain medium in low threshold lasers have not been clearly demonstrated. This work seeks to better understand the reasons for these limitations by focusing on the simpler, limited-mode microdisk cavities, and by carrying out comparisons of lasing dynamics in those cavities using varying gain media including InGaN quantum wells, fragmented quantum wells, and a combination of fragmented quantum wells with quantum dots. For each gain medium, we utilize the distinctive, high quality (Q~5500) modes of the cavities, and the change in the highest intensity mode as a function of pump power to better understand the dominant radiative processes. The variations of threshold power and lasing wavelength as a function of gain medium help us identify the possible limitations to lower-threshold lasing with quantum dot active medium. In addition, we have identified a distinctive lasing signature for quantum dot materials, which consistently lase at wavelengths shorter than the peak of the room temperature gain emission. These findings not only provide better understanding of lasing in nitride-based quantum dot cavity systems, but also shed insight into the more fundamental issues of light matter coupling in such systems. △ Less

Submitted 28 July, 2014; v1 submitted 21 July, 2014; originally announced July 2014.

Fabrication of thin diamond membranes for photonic applications

Authors: Jonathan C. Lee, Andrew P. Magyar, David O. Bracher, Igor Aharonovich, Evelyn L. Hu

Abstract: High quality, thin diamond membranes containing nitrogen-vacancy centers provide critical advantages in the fabrication of diamond-based structures for a variety of applications, including wide field magnetometry, photonics and bio-sensing. In this work we describe, in detail, the generation of thin, optically-active diamond membranes by means of ion implantation and overgrowth. To establish the s… ▽ More High quality, thin diamond membranes containing nitrogen-vacancy centers provide critical advantages in the fabrication of diamond-based structures for a variety of applications, including wide field magnetometry, photonics and bio-sensing. In this work we describe, in detail, the generation of thin, optically-active diamond membranes by means of ion implantation and overgrowth. To establish the suitability of our method for photonic applications, photonic crystal cavities with quality factor of 1000 are fabricated. △ Less

Submitted 29 September, 2012; originally announced October 2012.

Low threshold, room-temperature microdisk lasers in the blue spectral range

Authors: Igor Aharonovich, Alexander Woolf, Kasey J. Russell, Tongtong Zhu, Menno J. Kappers, Rachel A. Oliver, Evelyn L. Hu

Abstract: InGaN-based active layers within microcavity resonators offer the potential of low threshold lasers in the blue spectral range. Here we demonstrate optically pumped, room temperature lasing in high quality factor GaN microdisk cavities containing InGaN quantum dots (QDs) with thresholds as low as 0.28 mJ/cm2. This work, the first demonstration of lasing action from GaN microdisk cavities with QDs… ▽ More InGaN-based active layers within microcavity resonators offer the potential of low threshold lasers in the blue spectral range. Here we demonstrate optically pumped, room temperature lasing in high quality factor GaN microdisk cavities containing InGaN quantum dots (QDs) with thresholds as low as 0.28 mJ/cm2. This work, the first demonstration of lasing action from GaN microdisk cavities with QDs in the active layer, provides a critical step for the nitrides in realizing low threshold photonic devices with efficient coupling between QDs and an optical cavity. △ Less

Submitted 31 August, 2012; originally announced August 2012.

A full free spectral range tuning of p-i-n doped Gallium Nitride microdisk cavity

Authors: Nan Niu, Tsung-Li Liu, Igor Aharonovich, Kasey J. Russell, Alexander Woolf, Thomas C. Sadler, Haitham A. R. El-Ella, Menno J. Kappers, Rachel A. Oliver, Evelyn L. Hu

Abstract: Effective, permanent tuning of the whispering gallery modes (WGMs) of p-i-n doped GaN microdisk cavity with embedded InGaN quantum dots over one free spectral range is successfully demonstrated by irradiating the microdisks with a ultraviolet laser (380nm) in DI water. For incident laser powers between 150 and 960 nW, the tuning rate varies linearly. Etching of the top surface of the cavity is pro… ▽ More Effective, permanent tuning of the whispering gallery modes (WGMs) of p-i-n doped GaN microdisk cavity with embedded InGaN quantum dots over one free spectral range is successfully demonstrated by irradiating the microdisks with a ultraviolet laser (380nm) in DI water. For incident laser powers between 150 and 960 nW, the tuning rate varies linearly. Etching of the top surface of the cavity is proposed as the driving force for the observed shift in WGMs, and is supported by experiments. The tuning for GaN/InGaN microdisk cavities is an important step for deterministically realizing novel nanophotonic devices for studying cavity quantum electrodynamics. △ Less

Submitted 23 June, 2012; originally announced June 2012.

Ultrafast all-optical switching by single photons

Authors: Thomas Volz, Andreas Reinhard, Martin Winger, Antonio Badolato, Kevin J. Hennessy, Evelyn L. Hu, Atac Imamoglu

Abstract: An outstanding goal in quantum optics is the realization of fast optical non-linearities at the single-photon level. Such non-linearities would allow for the realization of optical devices with new functionalities such as a single-photon switch/transistor or a controlled-phase gate, which could form the basis of future quantum optical technologies. While non-linear optics effects at the single-emi… ▽ More An outstanding goal in quantum optics is the realization of fast optical non-linearities at the single-photon level. Such non-linearities would allow for the realization of optical devices with new functionalities such as a single-photon switch/transistor or a controlled-phase gate, which could form the basis of future quantum optical technologies. While non-linear optics effects at the single-emitter level have been demonstrated in different systems, including atoms coupled to Fabry-Perot or toroidal micro-cavities, super-conducting qubits in strip-line resonators or quantum dots (QDs) in nano-cavities, none of these experiments so far has demonstrated single-photon switching on ultrafast timescales. Here, we demonstrate that in a strongly coupled QD-cavity system the presence of a single photon on one of the fundamental polariton transitions can turn on light scattering on a transition from the first to the second Jaynes-Cummings manifold with a switching time of 20 ps. As an additional device application, we use this non-linearity to implement a single-photon pulse-correlator. Our QD-cavity system could form the building-block of future high-bandwidth photonic networks operating in the quantum regime. △ Less

Submitted 12 November, 2011; originally announced November 2011.

Journal ref: Nature Photonics 6, 605-609 (2012)

Separating enhancement from loss: plasmonic nanocavities in the weak coupling regime

Authors: Kasey J. Russell, Tsung-Li Liu, Shanying Cui, Evelyn L. Hu

Abstract: By modifying the density of optical states at the location of an emitter, weak cavity-emitter coupling can enable a host of potential applications in quantum optics, from the development of low- threshold lasers to brighter single-photon sources for quantum cryptography. Although some of the first demonstrations of spontaneous emission modification occurred in metallic structures, it was only afte… ▽ More By modifying the density of optical states at the location of an emitter, weak cavity-emitter coupling can enable a host of potential applications in quantum optics, from the development of low- threshold lasers to brighter single-photon sources for quantum cryptography. Although some of the first demonstrations of spontaneous emission modification occurred in metallic structures, it was only after the recent demonstration of cavity quantum electrodynamics effects in dielectric optical cavities that metal-based optical cavities were considered for quantum optics applications. Advantages of metal-optical cavities include their compatibility with a large variety of emitters and their broadband cavity spectra, which enable enhancement of spectrally-broad emitters. Here, we demonstrate a metal- based nanocavity structure that achieves radiative emission rate enhancements of 1000, opening up the possibility of pursuing cavity electrodynamics investigations with intrinsically broad optical emitters, including organic dyes and colloidal quantum dots. △ Less

Submitted 1 November, 2011; originally announced November 2011.

Strongly correlated photons on a chip

Authors: Andreas Reinhard, Thomas Volz, Martin Winger, Antonio Badolato, Kevin J. Hennessy, Evelyn L. Hu, Atac Imamoglu

Abstract: Optical non-linearities at the single-photon level are key ingredients for future photonic quantum technologies. Prime candidates for the realization of strong photon-photon interactions necessary for implementing quantum information processing tasks as well as for studying strongly correlated photons in an integrated photonic device setting are quantum dots embedded in photonic crystal nanocaviti… ▽ More Optical non-linearities at the single-photon level are key ingredients for future photonic quantum technologies. Prime candidates for the realization of strong photon-photon interactions necessary for implementing quantum information processing tasks as well as for studying strongly correlated photons in an integrated photonic device setting are quantum dots embedded in photonic crystal nanocavities. Here, we report strong quantum correlations between photons on picosecond timescales. We observe (a) photon antibunching upon resonant excitation of the lowest-energy polariton state, proving that the first cavity photon blocks the subsequent injection events, and (b) photon bunching when the laser field is in two-photon resonance with the polariton eigenstates of the second Jaynes-Cummings manifold, demonstrating that two photons at this color are more likely to be injected into the cavity jointly, than they would otherwise. Together,these results demonstrate unprecedented strong single-photon non-linearities, paving the way for realizing a single-photon transistor or a quantum optical Josephson interferometer. △ Less

Submitted 15 August, 2011; originally announced August 2011.

Journal ref: A. Reinhard, T. Volz, et al. Nature Photonics 6, 93-96 (2012)

Validation of Lasing in Active Nanocavities

Authors: Yong-Seok Choi, Matthew T. Rakher, Kevin Hennessy, Stefan Strauf, Antonio Badolato, Pierre M. Petroff, Dirk Bouwmeester, Evelyn L. Hu

Abstract: An unambiguous proof of lasing in an active nanocavity with ultrahigh spontaneous emission coupling factor (beta = 0.65) is presented. To distinguish the subtle lasing threshold features from possible material-related phenomena, such as saturable absorption in the gain medium, a series of active nanocavities with different values of beta have been designed to systematically approach the high-bet… ▽ More An unambiguous proof of lasing in an active nanocavity with ultrahigh spontaneous emission coupling factor (beta = 0.65) is presented. To distinguish the subtle lasing threshold features from possible material-related phenomena, such as saturable absorption in the gain medium, a series of active nanocavities with different values of beta have been designed to systematically approach the high-beta device. The demonstration of the lasing threshold is obtained through the observation of the transition from thermal to coherent light photon statistics that is well understood and identified in the beta << 1 lasing regime. The systematic investigation allows a more definitive validation of the onset of lasing in these active nanocavities. △ Less

Submitted 24 January, 2006; v1 submitted 24 January, 2006; originally announced January 2006.

Comments: 4 pages, 4 figures, submitted to Phys. Rev