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A facility for radiation hardness studies based on a medical cyclotron
Authors:
John Anders,
Saverio Braccini,
Tommaso Stefano Carzaniga,
Pierluigi Casolaro,
Meghranjana Chatterjee,
Gaia Dellepiane,
Laura Franconi,
Lea Halser,
Armin Ilg,
Isidre Mateu,
Federico Meloni,
Claudia Merlassino,
Antonio Miucci,
Roman Müller,
Marco Rimoldi,
Michele Weber
Abstract:
The development of instrumentation for operation in high-radiation environments represents a challenge in various research fields, particularly in particle physics experiments and space missions, and drives an ever-increasing demand for irradiation facilities dedicated to radiation hardness studies. Depending on the application, different needs arise in terms of particle type, energy and dose rate…
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The development of instrumentation for operation in high-radiation environments represents a challenge in various research fields, particularly in particle physics experiments and space missions, and drives an ever-increasing demand for irradiation facilities dedicated to radiation hardness studies. Depending on the application, different needs arise in terms of particle type, energy and dose rate. In this article, we present a versatile installation based on a medical cyclotron located at the Bern University Hospital (Inselspital), which is used as a controlled 18-MeV proton source. This accelerator is used for daily production of medical radioisotopes, as well as for multidisciplinary research, thanks to a 6.5-meter long beam transfer line that terminates in an independent bunker, dedicated only to scientific activities. The facility offers a wide range of proton fluxes, due to an adjustable beam current from approximately 10 pA to the micro-ampere range, together with a series of steering and focusing magnets along the beamline that allow for the beam spot to be focused down to a few mm^2. The beamline can be instrumented with a variety of beam monitoring detectors, collimators, and beam current measurement devices to precisely control the irradiation conditions. The facility also hosts a well equipped laboratory dedicated to the characterisation of samples after irradiation. An experimental validation of the irradiation setup, with proton fluxes ranging from $5\times10^9$ cm$^{-2}$s$^{-1}$ to $4\times10^{11}$ cm$^{-2}$s$^{-1}$, is reported in this article.
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Submitted 22 March, 2022; v1 submitted 11 January, 2022;
originally announced January 2022.
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MuPix and ATLASPix -- Architectures and Results
Authors:
A. Schöning,
J. Anders,
H. Augustin,
M. Benoit,
N. Berger,
S. Dittmeier,
F. Ehrler,
A. Fehr,
T. Golling,
S. Gonzalez Sevilla,
J. Hammerich,
A. Herkert,
L. Huth,
G. Iacobucci,
D. Immig,
M. Kiehn,
J. Kröger,
F. Meier,
A. Meneses Gonzalez,
A. Miucci,
L. O. S. Noehte,
I. Peric,
M. Prathapan,
T. Rudzki,
R. Schimassek
, et al. (7 additional authors not shown)
Abstract:
High Voltage Monolithic Active Pixel Sensors (HV-MAPS) are based on a commercial High Voltage CMOS process and collect charge by drift inside a reversely biased diode. HV-MAPS represent a promising technology for future pixel tracking detectors. Two recent developments are presented. The MuPix has a continuous readout and is being developed for the Mu3e experiment whereas the ATLASPix is being dev…
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High Voltage Monolithic Active Pixel Sensors (HV-MAPS) are based on a commercial High Voltage CMOS process and collect charge by drift inside a reversely biased diode. HV-MAPS represent a promising technology for future pixel tracking detectors. Two recent developments are presented. The MuPix has a continuous readout and is being developed for the Mu3e experiment whereas the ATLASPix is being developed for LHC applications with a triggered readout. Both variants have a fully monolithic design including state machines, clock circuitries and serial drivers. Several prototypes and design variants were characterised in the lab and in testbeam campaigns to measure efficiencies, noise, time resolution and radiation tolerance. Results from recent MuPix and ATLASPix prototypes are presented and prospects for future improvements are discussed.
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Submitted 17 February, 2020;
originally announced February 2020.
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Electrical characterization of AMS aH18 HV-CMOS after neutrons and protons irradiation
Authors:
D M S Sultan,
Sergio Gonzalez Sevilla,
Didier Ferrere,
Giuseppe Iacobucci,
Ettore Zaffaroni,
Winnie Wong,
Mateus Vicente Barrero Pinto,
Moritz Kiehn,
Mridula Prathapan,
Felix Ehrler,
Ivan Peric,
Antonio Miucci,
John Kenneth Anders,
Armin Fehr,
Michele Weber,
Andre Schoening,
Adrian Herkert,
Heiko Augustin,
Mathieu Benoit
Abstract:
In view of the tracking detector application to the ATLAS High Luminosity LHC (HL-LHC) upgrade, we have developed a new generation of High Voltage CMOS (HV-CMOS) monolithic pixel-sensor prototypes featuring the AMS aH18 (180 nm) commercial CMOS technology. By fully integrating both analog and digital readout-circuitry on the same particle-detecting substrate, current challenges of hybrid sensor te…
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In view of the tracking detector application to the ATLAS High Luminosity LHC (HL-LHC) upgrade, we have developed a new generation of High Voltage CMOS (HV-CMOS) monolithic pixel-sensor prototypes featuring the AMS aH18 (180 nm) commercial CMOS technology. By fully integrating both analog and digital readout-circuitry on the same particle-detecting substrate, current challenges of hybrid sensor technologies, i.e., larger readout input-capacitance, lower production-yield, and higher production and integration cost, can be downscaled. The large electrode design using high-resistivity substrates actively helps to mitigate the charge-trapping effects, making these chips radiation hard. The surface and bulk damage induced in high irradiation environment change the effective doping concentration of the device, which modulates high electric fields as the reverse-bias voltage increases. This effect can cause high leakage current and premature electrical breakdown, driven by impact ionization. In order to assess the characteristics of heavily irradiated samples, we have carried out dedicated campaigns on ATLASPix1 chips that included irradiations of neutrons and protons, made at different facilities. Here, we report on the electrical characterization of the irradiated samples at different ambient conditions, also in comparison to their pre-irradiation properties. Results demonstrate that hadron irradiated devices can be safely operated at a voltage high enough to allow for high efficiency, up to the fluence of 2E15 neq/cm2, beyond the radiation levels (TID and NIEL) expected in the outermost pixel layers of the new ATLAS tracker for HL-LHC.
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Submitted 28 May, 2020; v1 submitted 15 February, 2019;
originally announced February 2019.
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The TT-PET Data Acquisition and Trigger System
Authors:
Y. Bandi,
Y. Favre,
D. Ferrere,
D. Forshaw,
R. Hanni,
D. Hayakawa,
G. Iacobucci,
P. Lutz,
A. Miucci,
L. Paolozzi,
E. Ripiccini,
C. Tognina,
P. Valerio,
M. Weber
Abstract:
This paper describes the data acquisition and trigger system of the Thin Time-of-flight PET (TT-PET) scanner. The system is designed to read out in the order of 1000 pixel sensors used in the scanner and to provide a reference timing signal to each sensor in order to measure time differences of better than 30 ps. This clock distribution is measured to have a jitter of less than 4 ps at the sensors…
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This paper describes the data acquisition and trigger system of the Thin Time-of-flight PET (TT-PET) scanner. The system is designed to read out in the order of 1000 pixel sensors used in the scanner and to provide a reference timing signal to each sensor in order to measure time differences of better than 30 ps. This clock distribution is measured to have a jitter of less than 4 ps at the sensors. Collected data is locally processed before being forwarded to storage. Data flow as well as control, configuration and monitoring aspects are are also addressed.
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Submitted 10 December, 2018;
originally announced December 2018.
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Module concept and thermo-mechanical studies of the silicon-based TT-PET small-animal scanner
Authors:
Didier Ferrere,
Yves Bandi,
Frank Cadoux,
Dean Forshaw,
Daiki Hayakawa,
Giuseppe Iacobucci,
Sebastien Michal,
Antonio Miucci,
Marzio Nessi,
Lorenzo Paolozzi,
Emanuele Ripiccini,
Pierpaolo Valerio,
Michele Weber
Abstract:
The TT-PET collaboration is developing an MRI-compatible small animal PET scanner in which the sensitive element is a monolithic silicon pixel ASIC targeting 30 ps RMS time resolution. The photon-detection technique is based on a stack of alternating layers of high-Z photon converter and 100 $\mathrm{μm}$ silicon sensors, to produce a scanner with 0.5 $\mathrm{\times}$ 0.5 $\mathrm{\times}$ 0.2…
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The TT-PET collaboration is developing an MRI-compatible small animal PET scanner in which the sensitive element is a monolithic silicon pixel ASIC targeting 30 ps RMS time resolution. The photon-detection technique is based on a stack of alternating layers of high-Z photon converter and 100 $\mathrm{μm}$ silicon sensors, to produce a scanner with 0.5 $\mathrm{\times}$ 0.5 $\mathrm{\times}$ 0.2 $\mathrm{mm^{3}}$ granularity for precise depth-of-interaction measurement. In this paper we present the results of simulation studies for the expected data rate, time-of-flight and spatial resolution, as well as the performance of image reconstruction with and without the use of timing information.
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Submitted 12 March, 2019; v1 submitted 29 November, 2018;
originally announced December 2018.
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Characterization of the demonstrator of the fast silicon monolithic ASIC for the TT-PET project
Authors:
Lorenzo Paolozzi,
Yves Bandi,
Roberto Cardarelli,
Stephane Debieux,
Yannick Favre,
Didier Ferrere,
Dean Forshaw,
Daiki Hayakawa,
Giuseppe Iacobucci,
Mehmet Kaynak,
Antonio Miucci,
Marzio Nessi,
Emanuele Ripiccini,
Holger Ruecker,
Pierpaolo Valerio,
Michele Weber
Abstract:
The TT-PET collaboration is developing a small animal TOF-PET scanner based on monolithic silicon pixel sensors in SiGe BiCMOS technology. The demonstrator chip, a small-scale version of the final detector ASIC, consists of a 3 x 10 pixel matrix integrated with the front-end, a 50 ps binning TDC and read out logic. The chip, thinned down to 100 μm and backside metallized, was operated at a voltage…
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The TT-PET collaboration is developing a small animal TOF-PET scanner based on monolithic silicon pixel sensors in SiGe BiCMOS technology. The demonstrator chip, a small-scale version of the final detector ASIC, consists of a 3 x 10 pixel matrix integrated with the front-end, a 50 ps binning TDC and read out logic. The chip, thinned down to 100 μm and backside metallized, was operated at a voltage of 180 V. The tests on a beam line of minimum ionizing particles show a detection efficiency greater than 99.9 % and a time resolution down to 110 ps.
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Submitted 27 November, 2018;
originally announced November 2018.
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Charge collection characterisation with the Transient Current Technique of the ams H35DEMO CMOS detector after proton irradiation
Authors:
John Anders,
Mathieu Benoit,
Saverio Braccini,
Raimon Casanova,
Hucheng Chen,
Kai Chen,
Francesco Armando di Bello,
Armin Fehr,
Didier Ferrere,
Dean Forshaw,
Tobias Golling,
Sergio Gonzalez-Sevilla,
Giuseppe Iacobucci,
Moritz Kiehn,
Francesco Lanni,
Hongbin Liu,
Lingxin Meng,
Claudia Merlassino,
Antonio Miucci,
Marzio Nessi,
Ivan Perić,
Marco Rimoldi,
D M S Sultan,
Mateus Vincente Barreto Pinto,
Eva Vilella
, et al. (4 additional authors not shown)
Abstract:
This paper reports on the characterisation with Transient Current Technique measurements of the charge collection and depletion depth of a radiation-hard high-voltage CMOS pixel sensor produced at ams AG. Several substrate resistivities were tested before and after proton irradiation with two different sources: the 24 GeV Proton Synchrotron at CERN and the 16.7 MeV Cyclotron at Bern Inselspital.
This paper reports on the characterisation with Transient Current Technique measurements of the charge collection and depletion depth of a radiation-hard high-voltage CMOS pixel sensor produced at ams AG. Several substrate resistivities were tested before and after proton irradiation with two different sources: the 24 GeV Proton Synchrotron at CERN and the 16.7 MeV Cyclotron at Bern Inselspital.
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Submitted 25 July, 2018;
originally announced July 2018.
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Performance of CMOS pixel sensor prototypes in ams H35 and aH18 technology for the ATLAS ITk upgrade
Authors:
Moritz Kiehn,
Francesco Armando Di Bello,
Mathieu Benoit,
Raimon Casanova Mohr,
Hucheng Chen,
Kai Chen,
Sultan D. M. S.,
Felix Ehrler,
Didier Ferrere,
Dylan Frizell,
Sergio Gonzalez Sevilla,
Giuseppe Iacobucci,
Francesco Lanni,
Hongbin Liu,
Claudia Merlassino,
Jessica Metcalfe,
Antonio Miucci,
Ivan Peric,
Mridula Prathapan,
Rudolf Schimassek,
Mateus Vicente Barreto,
Thomas Weston,
Eva Vilella Figueras,
Alena Weber,
Michele Weber
, et al. (5 additional authors not shown)
Abstract:
Pixel sensors based on commercial high-voltage CMOS processes are an exciting technology that is considered as an option for the outer layer of the ATLAS inner tracker upgrade at the High Luminosity LHC. Here, charged particles are detected using deep n-wells as sensor diodes with the depleted region extending into the silicon bulk. Both analog and digital readout electronics can be added to achie…
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Pixel sensors based on commercial high-voltage CMOS processes are an exciting technology that is considered as an option for the outer layer of the ATLAS inner tracker upgrade at the High Luminosity LHC. Here, charged particles are detected using deep n-wells as sensor diodes with the depleted region extending into the silicon bulk. Both analog and digital readout electronics can be added to achieve different levels of integration up to a fully monolithic sensor. Small scale prototypes using the ams CMOS technology have previously demonstrated that it can achieve the required radiation tolerance of $10^{15}~\text{n}_\text{eq}/\text{cm}^2$ and detection efficiencies above $99.5~\%$. Recently, large area prototypes, comparable in size to a full sensor, have been produced that include most features required towards a final design: the H35demo prototype produced in ams H35 technology that supports both external and integrated readout and the monolithic ATLASPix1 pre-production design produced in ams aH18 technology. Both chips are based on large fill-factor pixel designs, but differ in readout structure. Performance results for H35DEMO with capacitively-coupled external readout and first results for the monolithic ATLASPix1 are shown.
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Submitted 8 June, 2020; v1 submitted 16 July, 2018;
originally announced July 2018.
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A facility for radiation hardness studies based on the Bern medical cyclotron
Authors:
John Anders,
Saverio Braccini,
Tommaso Carzaniga,
Antonio Ereditato,
Armin Fehr,
Federico Meloni,
Claudia Merlassino,
Antonio Miucci,
Marco Rimoldi,
Michele Weber
Abstract:
The development of instrumentation to be operated in high-radiation environments is one of the main challenges in fundamental research. Besides space and nuclear applications, particle physics experiments also need radiation-hard devices. The focus of this paper is a new irradiation facility based on the medical cyclotron located at the Bern University Hospital (Insespital), which is used as a con…
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The development of instrumentation to be operated in high-radiation environments is one of the main challenges in fundamental research. Besides space and nuclear applications, particle physics experiments also need radiation-hard devices. The focus of this paper is a new irradiation facility based on the medical cyclotron located at the Bern University Hospital (Insespital), which is used as a controlled 18 MeV proton source. The adjustable beam current allows for dose rate dependent characterisation over a large dynamic range, from 0.1 to 1000 Grad per hour. The beam can be tuned so that the user can obtain the desired irradiation conditions. A complete study of the device under irradiation is possible thanks to dedicated beam monitoring systems as well as a power control system for the device under irradiation, which can be operated on-line. Further characterisations of the irradiated devices are possible thanks to a laboratory equipped with gamma spectroscopy detectors, ammeters and transient current technique setups.
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Submitted 5 March, 2018;
originally announced March 2018.
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Production and Integration of the ATLAS Insertable B-Layer
Authors:
B. Abbott,
J. Albert,
F. Alberti,
M. Alex,
G. Alimonti,
S. Alkire,
P. Allport,
S. Altenheiner,
L. Ancu,
E. Anderssen,
A. Andreani,
A. Andreazza,
B. Axen,
J. Arguin,
M. Backhaus,
G. Balbi,
J. Ballansat,
M. Barbero,
G. Barbier,
A. Bassalat,
R. Bates,
P. Baudin,
M. Battaglia,
T. Beau,
R. Beccherle
, et al. (352 additional authors not shown)
Abstract:
During the shutdown of the CERN Large Hadron Collider in 2013-2014, an additional pixel layer was installed between the existing Pixel detector of the ATLAS experiment and a new, smaller radius beam pipe. The motivation for this new pixel layer, the Insertable B-Layer (IBL), was to maintain or improve the robustness and performance of the ATLAS tracking system, given the higher instantaneous and i…
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During the shutdown of the CERN Large Hadron Collider in 2013-2014, an additional pixel layer was installed between the existing Pixel detector of the ATLAS experiment and a new, smaller radius beam pipe. The motivation for this new pixel layer, the Insertable B-Layer (IBL), was to maintain or improve the robustness and performance of the ATLAS tracking system, given the higher instantaneous and integrated luminosities realised following the shutdown. Because of the extreme radiation and collision rate environment, several new radiation-tolerant sensor and electronic technologies were utilised for this layer. This paper reports on the IBL construction and integration prior to its operation in the ATLAS detector.
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Submitted 6 June, 2018; v1 submitted 2 March, 2018;
originally announced March 2018.
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Test beam measurement of the first prototype of the fast silicon pixel monolithic detector for the TT-PET project
Authors:
L. Paolozzi,
Y. Bandi,
M. Benoit,
R. Cardarelli,
S. Débieux,
D. Forshaw,
D. Hayakawa,
G. Iacobucci,
M. Kaynak,
A. Miucci,
M. Nessi,
O. Ratib,
E. Ripiccini,
H. Rücker,
P. Valerio,
M. Weber
Abstract:
The TT-PET collaboration is developing a PET scanner for small animals with 30 ps time-of-flight resolution and sub-millimetre 3D detection granularity. The sensitive element of the scanner is a monolithic silicon pixel detector based on state-of-the-art SiGe BiCMOS technology. The first ASIC prototype for the TT-PET was produced and tested in the laboratory and with minimum ionizing particles. Th…
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The TT-PET collaboration is developing a PET scanner for small animals with 30 ps time-of-flight resolution and sub-millimetre 3D detection granularity. The sensitive element of the scanner is a monolithic silicon pixel detector based on state-of-the-art SiGe BiCMOS technology. The first ASIC prototype for the TT-PET was produced and tested in the laboratory and with minimum ionizing particles. The electronics exhibit an equivalent noise charge below 600 e- RMS and a pulse rise time of less than 2 ns, in accordance with the simulations. The pixels with a capacitance of 0.8 pF were measured to have a detection efficiency greater than 99% and, although in the absence of the post-processing, a time resolution of approximately 200 ps.
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Submitted 6 February, 2018; v1 submitted 5 February, 2018;
originally announced February 2018.
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Test beam measurement of ams H35 HV-CMOS capacitively coupled pixel sensor prototypes with high-resistivity substrate
Authors:
M. Benoit,
S. Braccini,
R. Casanova,
E. Cavallaro,
H. Chen,
K. Chen,
F. A. Di Bello,
D. Ferrere,
D. Frizzell,
T. Golling,
S. Gonzalez-Sevilla,
S. Grinstein,
G. Iacobucci,
M. Kiehn,
F. Lanni,
H. Liu,
J. Metcalfe,
L. Meng,
C. Merlassino,
A. Miucci,
D. Muenstermann,
M. Nessi,
H. Okawa,
I. Perić,
M. Rimoldi
, et al. (12 additional authors not shown)
Abstract:
In the context of the studies of the ATLAS High Luminosity LHC programme, radiation tolerant pixel detectors in CMOS technologies are investigated. To evaluate the effects of substrate resistivity on CMOS sensor performance, the H35DEMO demonstrator, containing different diode and amplifier designs, was produced in ams H35 HV-CMOS technology using four different substrate resistivities spanning fr…
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In the context of the studies of the ATLAS High Luminosity LHC programme, radiation tolerant pixel detectors in CMOS technologies are investigated. To evaluate the effects of substrate resistivity on CMOS sensor performance, the H35DEMO demonstrator, containing different diode and amplifier designs, was produced in ams H35 HV-CMOS technology using four different substrate resistivities spanning from $\mathrm{80}$ to $\mathrm{1000~Ω\cdot cm}$. A glueing process using a high-precision flip-chip machine was developed in order to capacitively couple the sensors to FE-I4 Readout ASIC using a thin layer of epoxy glue with good uniformity over a large surface. The resulting assemblies were measured in beam test at the Fermilab Test Beam Facilities with 120 GeV protons and CERN SPS H8 beamline using 80 GeV pions. The in-time efficiency and tracking properties measured for the different sensor types are shown to be compatible with the ATLAS ITk requirements for its pixel sensors.
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Submitted 3 December, 2018; v1 submitted 22 December, 2017;
originally announced December 2017.
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Testbeam results of irradiated ams H18 HV-CMOS pixel sensor prototypes
Authors:
M. Benoit,
S. Braccini,
G. Casse,
H. Chen,
K. Chen,
F. A. Di Bello,
D. Ferrere,
T. Golling,
S. Gonzalez-Sevilla,
G. Iacobucci,
M. Kiehn,
F. Lanni,
H. Liu,
L. Meng,
C. Merlassino,
A. Miucci,
D. Muenstermann,
M. Nessi,
H. Okawa,
I. Peric,
M. Rimoldi,
B. Ristic,
M. Vicente Barrero Pinto,
J. Vossebeld,
M. Weber
, et al. (4 additional authors not shown)
Abstract:
HV-CMOS pixel sensors are a promising option for the tracker upgrade of the ATLAS experiment at the LHC, as well as for other future tracking applications in which large areas are to be instrumented with radiation-tolerant silicon pixel sensors. We present results of testbeam characterisations of the $4^{\mathrm{th}}$ generation of Capacitively Coupled Pixel Detectors (CCPDv4) produced with the am…
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HV-CMOS pixel sensors are a promising option for the tracker upgrade of the ATLAS experiment at the LHC, as well as for other future tracking applications in which large areas are to be instrumented with radiation-tolerant silicon pixel sensors. We present results of testbeam characterisations of the $4^{\mathrm{th}}$ generation of Capacitively Coupled Pixel Detectors (CCPDv4) produced with the ams H18 HV-CMOS process that have been irradiated with different particles (reactor neutrons and 18 MeV protons) to fluences between $1\cdot 10^{14}$ and $5\cdot 10^{15}$ 1-MeV-n$_\textrm{eq}$/cm$^2$. The sensors were glued to ATLAS FE-I4 pixel readout chips and measured at the CERN SPS H8 beamline using the FE-I4 beam telescope. Results for all fluences are very encouraging with all hit efficiencies being better than 97% for bias voltages of $85\,$V. The sample irradiated to a fluence of $1\cdot 10^{15}$ n$_\textrm{eq}$/cm$^2$ - a relevant value for a large volume of the upgraded tracker - exhibited 99.7% average hit efficiency. The results give strong evidence for the radiation tolerance of HV-CMOS sensors and their suitability as sensors for the experimental HL-LHC upgrades and future large-area silicon-based tracking detectors in high-radiation environments.
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Submitted 28 November, 2017; v1 submitted 8 November, 2016;
originally announced November 2016.
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Results of the 2015 testbeam of a 180 nm AMS High-Voltage CMOS sensor prototype
Authors:
M. Benoit,
J. Bilbao de Mendizabal,
G. Casse,
H. Chen,
K. Chen,
F. A. Di Bello,
D. Ferrere,
T. Golling,
S. Gonzalez-Sevilla,
G. Iacobucci,
F. Lanni,
H. Liu,
F. Meloni,
L. Meng,
A. Miucci,
D. Muenstermann,
M. Nessi,
I. Peric,
M. Rimoldi,
B. Ristic,
M. Vicente Barrero Pinto,
J. Vossebeld,
M. Weber,
W. Wu,
L. Xu
Abstract:
Active pixel sensors based on the High-Voltage CMOS technology are being investigated as a viable option for the future pixel tracker of the ATLAS experiment at the High-Luminosity LHC. This paper reports on the testbeam measurements performed at the H8 beamline of the CERN Super Proton Synchrotron on a High-Voltage CMOS sensor prototype produced in 180 nm AMS technology. Results in terms of track…
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Active pixel sensors based on the High-Voltage CMOS technology are being investigated as a viable option for the future pixel tracker of the ATLAS experiment at the High-Luminosity LHC. This paper reports on the testbeam measurements performed at the H8 beamline of the CERN Super Proton Synchrotron on a High-Voltage CMOS sensor prototype produced in 180 nm AMS technology. Results in terms of tracking efficiency and timing performance, for different threshold and bias conditions, are shown.
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Submitted 30 June, 2016; v1 submitted 24 March, 2016;
originally announced March 2016.