Photo-ionization Compensation of Stray Electric Fields for Cold Rydberg Atoms
Authors:
Z. -Y. Chen,
Z. -X. Fu,
Z. -R He,
Z. -Y. Chen,
S. -A. Cheng,
J. -H. Liang,
S. -C. Zhang,
Y. -X. Du,
C. Li
Abstract:
Neurtal atoms in optical tweezer arrays constitute a highly promising platform for quantum computing and quantum simulation. Their operation relies on precise control of the Rydberg excitation, which is highly sensitive to background electric fields. Here, we identify a previously overlooked source of stray electric fields arising from trapped charges within the antireflection coating layers of gl…
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Neurtal atoms in optical tweezer arrays constitute a highly promising platform for quantum computing and quantum simulation. Their operation relies on precise control of the Rydberg excitation, which is highly sensitive to background electric fields. Here, we identify a previously overlooked source of stray electric fields arising from trapped charges within the antireflection coating layers of glass vacuum cells. In contrast to the conventional approach of removing surface charges through ultraviolet-light-induced desorption, we compensate these clamped charges by generating additional charges via photo-ionization of a cold atomic ensemble. We verify the resulting suppression of stray electric fields through Rydberg excitation spectroscopy in an atomic array and further confirm that the residual electric field inside the vacuum cell is effectively eradicated with the aid of external electrodes. Our work identifies and mitigates a previously unrecognized source of residual electric field, providing a practical solution for improving the performance of neutral atomic quantum processors and other Rydberg-based quantum technologies, as well as surface-sensitive atomic systems.
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Submitted 11 August, 2026; v1 submitted 5 August, 2026;
originally announced August 2026.
Physical Insights of Low Thermal Expansion Coefficient Electrode Stress Effect on Hafnia-Based Switching Speed
Authors:
Y. -T. Tsai,
C. -R. Liu,
Y. -T. Chen,
S. -M. Wang,
Z. -K. Chen,
C. -S. Pai,
Z. -R. Haung,
F. -S. Chang,
Z. -X. Li,
K. -Y. Hsiang,
M. -H. Lee,
Y. -T. Tang
Abstract:
In this report, we investigate the effect of low coefficient of thermal expansion (CTE) metals on the operating speed of hafnium-based oxide capacitance. We found that the cooling process of low CTE metals during rapid thermal annealing (RTA) generates in-plane tensile stresses in the film, This facilitates an increase in the volume fraction of the o-phase and significantly improves the domain swi…
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In this report, we investigate the effect of low coefficient of thermal expansion (CTE) metals on the operating speed of hafnium-based oxide capacitance. We found that the cooling process of low CTE metals during rapid thermal annealing (RTA) generates in-plane tensile stresses in the film, This facilitates an increase in the volume fraction of the o-phase and significantly improves the domain switching speed. However, no significant benefit was observed at electric fields less than 1 MV/cm. This is because at low voltage operation, the defective resistance (dead layer) within the interface prevents electron migration and the increased RC delay. Minimizing interface defects will be an important key to extending endurance and retention.
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Submitted 10 July, 2023;
originally announced July 2023.