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Helios: A 98-qubit trapped-ion quantum computer
Authors:
Anthony Ransford,
M. S. Allman,
Jake Arkinstall,
J. P. Campora III,
Samuel F. Cooper,
Robert D. Delaney,
Joan M. Dreiling,
Brian Estey,
Caroline Figgatt,
Alex Hall,
Ali A. Husain,
Akhil Isanaka,
Colin J. Kennedy,
Nikhil Kotibhaskar,
Ivaylo S. Madjarov,
Karl Mayer,
Alistair R. Milne,
Annie J. Park,
Adam P. Reed,
Riley Ancona,
Molly P. Andersen,
Pablo Andres-Martinez,
Will Angenent,
Liz Argueta,
Benjamin Arkin
, et al. (161 additional authors not shown)
Abstract:
We report on Quantinuum Helios, a 98-qubit trapped-ion quantum processor based on the quantum charge-coupled device (QCCD) architecture. Helios features $^{137}$Ba$^{+}$ hyperfine qubits, all-to-all connectivity enabled by a rotatable ion storage ring connecting two quantum operation regions by a junction, speed improvements from parallelized operations, and a new software stack with real-time com…
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We report on Quantinuum Helios, a 98-qubit trapped-ion quantum processor based on the quantum charge-coupled device (QCCD) architecture. Helios features $^{137}$Ba$^{+}$ hyperfine qubits, all-to-all connectivity enabled by a rotatable ion storage ring connecting two quantum operation regions by a junction, speed improvements from parallelized operations, and a new software stack with real-time compilation of dynamic programs. Averaged over all operational zones in the system, we achieve average infidelities of $2.5(1)\times10^{-5}$ for single-qubit gates, $7.9(2)\times10^{-4}$ for two-qubit gates, and $4.8(6)\times10^{-4}$ for state preparation and measurement, none of which are fundamentally limited and likely able to be improved. These component infidelities are predictive of system-level performance in both random Clifford circuits and random circuit sampling, the latter demonstrating that Helios operates well beyond the reach of classical simulation and establishes a new frontier of fidelity and complexity for quantum computers.
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Submitted 7 November, 2025;
originally announced November 2025.
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Tomography of Ultra-relativistic Nuclei with Polarized Photon-gluon Collisions
Authors:
STAR Collaboration,
M. S. Abdallah,
B. E. Aboona,
J. Adam,
L. Adamczyk,
J. R. Adams,
J. K. Adkins,
G. Agakishiev,
I. Aggarwal,
M. M. Aggarwal,
Z. Ahammed,
A. Aitbaev,
I. Alekseev,
D. M. Anderson,
A. Aparin,
E. C. Aschenauer,
M. U. Ashraf,
F. G. Atetalla,
G. S. Averichev,
V. Bairathi,
W. Baker,
J. G. Ball Cap,
K. Barish,
A. Behera,
R. Bellwied
, et al. (370 additional authors not shown)
Abstract:
A linearly polarized photon can be quantized from the Lorentz-boosted electromagnetic field of a nucleus traveling at ultra-relativistic speed. When two relativistic heavy nuclei pass one another at a distance of a few nuclear radii, the photon from one nucleus may interact through a virtual quark-antiquark pair with gluons from the other nucleus forming a short-lived vector meson (e.g. ${ρ^0}$).…
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A linearly polarized photon can be quantized from the Lorentz-boosted electromagnetic field of a nucleus traveling at ultra-relativistic speed. When two relativistic heavy nuclei pass one another at a distance of a few nuclear radii, the photon from one nucleus may interact through a virtual quark-antiquark pair with gluons from the other nucleus forming a short-lived vector meson (e.g. ${ρ^0}$). In this experiment, the polarization was utilized in diffractive photoproduction to observe a unique spin interference pattern in the angular distribution of ${ρ^0\rightarrowπ^+π^-}$ decays. The observed interference is a result of an overlap of two wave functions at a distance an order of magnitude larger than the ${ρ^0}$ travel distance within its lifetime. The strong-interaction nuclear radii were extracted from these diffractive interactions, and found to be $6.53\pm 0.06$ fm ($^{197} {\rm Au }$) and $7.29\pm 0.08$ fm ($^{238} {\rm U}$), larger than the nuclear charge radii. The observable is demonstrated to be sensitive to the nuclear geometry and quantum interference of non-identical particles.
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Submitted 4 April, 2022;
originally announced April 2022.
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Two-Electron Spin Correlations in Precision Placed Donors in Silicon
Authors:
M. A. Broome,
S. K. Gorman,
M. G. House,
S. J. Hile,
J. G. Keizer,
D. Keith,
C. D. Hill,
T. F. Watson,
W. J. Baker,
L. C. L. Hollenberg,
M. Y. Simmons
Abstract:
Substitutional donor atoms in silicon are promising qubits for quantum computation with extremely long relaxation and dephasing times demonstrated. One of the critical challenges of scaling these systems is determining inter-donor distances to achieve controllable wavefunction overlap while at the same time performing high fidelity spin readout on each qubit. Here we achieve such a device by means…
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Substitutional donor atoms in silicon are promising qubits for quantum computation with extremely long relaxation and dephasing times demonstrated. One of the critical challenges of scaling these systems is determining inter-donor distances to achieve controllable wavefunction overlap while at the same time performing high fidelity spin readout on each qubit. Here we achieve such a device by means of scanning tunnelling microscopy lithography. We measure anti-correlated spin states between two donor-based spin qubits in silicon separated by 16${\pm}1$ nm. By utilizing an asymmetric system with two phosphorus donors at one qubit site and one on the other (2P-1P), we demonstrate that the exchange interaction can be turned on and off via electrical control of two in-plane phosphorus doped detuning gates. We determine the tunnel coupling between the 2P-1P system to be 200 MHz and provide a roadmap for the observation of two-electron coherent exchange oscillations.
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Submitted 26 July, 2018;
originally announced July 2018.
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Singlet-triplet minus mixing and relaxation lifetimes in a double donor dot
Authors:
S. K. Gorman,
M. A. Broome,
M. G. House,
S. J. Hile,
J. G. Keizer,
D. Keith,
T. F. Watson,
W. J. Baker,
M. Y. Simmons
Abstract:
We measure singlet-triplet mixing in a precision fabricated double donor dot comprising of 2 and 1 phosphorus atoms separated by $16{\pm}1$ nm. We identify singlet and triplet-minus states by performing sequential independent spin readout of the two electron system and probe its dependence on magnetic field strength. The relaxation of singlet and triplet states are measured to be $12.4{\pm}1.0$ s…
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We measure singlet-triplet mixing in a precision fabricated double donor dot comprising of 2 and 1 phosphorus atoms separated by $16{\pm}1$ nm. We identify singlet and triplet-minus states by performing sequential independent spin readout of the two electron system and probe its dependence on magnetic field strength. The relaxation of singlet and triplet states are measured to be $12.4{\pm}1.0$ s and $22.1{\pm}1.0$ s respectively at $B_z{=}2.5$ T.
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Submitted 26 July, 2018;
originally announced July 2018.
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High Fidelity Single-Shot Singlet-Triplet Readout of Precision Placed Donors in Silicon
Authors:
M. A. Broome,
T. F. Watson,
D. Keith,
S. K. Gorman,
M. G. House,
J. G. Keizer,
S. J. Hile,
W. Baker,
M. Y. Simmons
Abstract:
In this work we perform direct single-shot readout of the singlet-triplet states in exchange coupled electrons confined to precision placed donor atoms in silicon. Our method takes advantage of the large energy splitting given by the Pauli-spin blockaded (2,0) triplet states, from which we can achieve a single-shot readout fidelity of 98.4$\pm$0.2%. We measure the triplet-minus relaxation time to…
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In this work we perform direct single-shot readout of the singlet-triplet states in exchange coupled electrons confined to precision placed donor atoms in silicon. Our method takes advantage of the large energy splitting given by the Pauli-spin blockaded (2,0) triplet states, from which we can achieve a single-shot readout fidelity of 98.4$\pm$0.2%. We measure the triplet-minus relaxation time to be of the order 3s at 2.5T and observe its predicted decrease as a function of magnetic field, reaching 0.5s at 1T.
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Submitted 26 July, 2018;
originally announced July 2018.
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Mapping the Chemical Potential Landscape of a Triple Quantum Dot
Authors:
M. A. Broome,
S. K. Gorman,
J. G. Keizer,
T. F. Watson,
S. J. Hile,
W. J. Baker,
M. Y. Simmons
Abstract:
We investigate the non-equilibrium charge dynamics of a triple quantum dot and demonstrate how electron transport through these systems can give rise to non-trivial tunnelling paths. Using a real-time charge sensing method we establish tunnelling pathways taken by particular electrons under well-defined electrostatic configurations. We show how these measurements map to the chemical potentials for…
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We investigate the non-equilibrium charge dynamics of a triple quantum dot and demonstrate how electron transport through these systems can give rise to non-trivial tunnelling paths. Using a real-time charge sensing method we establish tunnelling pathways taken by particular electrons under well-defined electrostatic configurations. We show how these measurements map to the chemical potentials for different charge states across the system. We use a modified Hubbard Hamiltonian to describe the system dynamics and show that it reproduces all experimental observations.
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Submitted 12 September, 2016;
originally announced September 2016.
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Extracting inter-dot tunnel couplings between few donor quantum dots in silicon
Authors:
Samuel K. Gorman,
Matthew A. Broome,
Joris G. Keizer,
Thomas F. Watson,
Samuel J. Hile,
William J. Baker,
Michelle Y. Simmons
Abstract:
The long term scaling prospects for solid-state quantum computing architectures relies heavily on the ability to simply and reliably measure and control the coherent electron interaction strength, known as the tunnel coupling, $t_c$. Here, we describe a method to extract the $t_c$ between two quantum dots (QDs) utilising their different tunnel rates to a reservoir. We demonstrate the technique on…
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The long term scaling prospects for solid-state quantum computing architectures relies heavily on the ability to simply and reliably measure and control the coherent electron interaction strength, known as the tunnel coupling, $t_c$. Here, we describe a method to extract the $t_c$ between two quantum dots (QDs) utilising their different tunnel rates to a reservoir. We demonstrate the technique on a few donor triple QD tunnel coupled to a nearby single-electron transistor (SET) in silicon. The device was patterned using scanning tunneling microscopy-hydrogen lithography allowing for a direct measurement of the tunnel coupling for a given inter-dot distance. We extract ${t}_{\rm{c}}=5.5\pm 1.8\;{\rm{GHz}}$ and ${t}_{\rm{c}}=2.2\pm 1.3\;{\rm{GHz}}$ between each of the nearest-neighbour QDs which are separated by 14.5 nm and 14.0 nm, respectively. The technique allows for an accurate measurement of $t_c$ for nanoscale devices even when it is smaller than the electron temperature and is an ideal characterisation tool for multi-dot systems with a charge sensor.
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Submitted 5 June, 2016; v1 submitted 2 June, 2016;
originally announced June 2016.
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The impact of nuclear spin dynamics on electron transport through donors
Authors:
Samuel K. Gorman,
Matthew A. Broome,
William J. Baker,
Michelle Y. Simmons
Abstract:
We present an analysis of electron transport through two weakly coupled precision placed phosphorus donors in silicon. In particular, we examine the (1,1) to (0,2) charge transition where we predict a new type of current blockade driven entirely by the nuclear spin dynamics. Using this nuclear spin blockade mechanism we devise a protocol to readout the state of single nuclear spins using electron…
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We present an analysis of electron transport through two weakly coupled precision placed phosphorus donors in silicon. In particular, we examine the (1,1) to (0,2) charge transition where we predict a new type of current blockade driven entirely by the nuclear spin dynamics. Using this nuclear spin blockade mechanism we devise a protocol to readout the state of single nuclear spins using electron transport measurements only. We extend our model to include realistic effects such as Stark shifted hyperfine interactions and multi-donor clusters. In the case of multi-donor clusters we show how nuclear spin blockade can be alleviated allowing for low magnetic field electron spin measurements.
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Submitted 17 September, 2015;
originally announced September 2015.
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Exciton-polaron complexes in pulsed electrically-detected magnetic resonance
Authors:
T. L. Keevers,
W. J. Baker,
D. R. McCamey
Abstract:
Several microscopic pathways have been proposed to explain the large magnetic effects observed in organic semiconductors, but identifying and characterising which microscopic process actually influences the overall magnetic field response is challenging. Pulsed electrically-detected magnetic resonance provides an ideal platform for this task as it intrinsically monitors the charge carriers of inte…
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Several microscopic pathways have been proposed to explain the large magnetic effects observed in organic semiconductors, but identifying and characterising which microscopic process actually influences the overall magnetic field response is challenging. Pulsed electrically-detected magnetic resonance provides an ideal platform for this task as it intrinsically monitors the charge carriers of interest and provides dynamical information which is inaccessible through conventional magnetoconductance measurements. Here we develop a general time domain theory to describe the spin-dependent reaction of exciton-charge complexes following the coherent manipulation of paramagnetic centers through electron spin resonance. A general Hamiltonian is treated, and it is shown that the transition frequencies and resonance positions of the exciton-polaron complex can be used to estimate inter-species coupling. This work also provides a general formalism for analysing multi-pulse experiments which can be used to extract relaxation and transport rates.
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Submitted 19 February, 2015;
originally announced February 2015.