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An on-chip programmable mechano-quantum transducer
Authors:
Xinrui Zhang,
Wei Liu,
Duanyu Ma,
Lin-Ke Xie,
Nai-Jie Guo,
Zhongtao Gou,
Yifan Wang,
Jianxin Xu,
Xiaoguang Luo,
Zhao Mu,
Honglong Chang,
Weizheng Yuan,
Jian-Shun Tang,
Chuan-Feng Li,
Guangcan Guo,
Tao Ye
Abstract:
Solid-state spin defects encode local perturbations as measurable shifts in spin-transition frequencies, but mechanical actuation and quantum readout remain physically separated, resulting in a discrete measurement setup. Integrating these functions requires an on-site mechano-quantum interface that programs the lattice state of a defect host and quantitatively maps it onto the spin Hamiltonian. H…
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Solid-state spin defects encode local perturbations as measurable shifts in spin-transition frequencies, but mechanical actuation and quantum readout remain physically separated, resulting in a discrete measurement setup. Integrating these functions requires an on-site mechano-quantum interface that programs the lattice state of a defect host and quantitatively maps it onto the spin Hamiltonian. Here we first report an on-chip programmable mechano-quantum transducer (OCPMQT) that integrates voltage-defined micromechanical actuation with in situ spin-frequency readout in a two-dimensional van der Waals quantum-defect host. Mechanically programmed lattice states are encoded as shifts in the axial zero-field splitting parameter and resolved by optically detected magnetic resonance (ODMR) spectroscopy. Within a chip volume of 2.05*10^-2 cm^3, the transducer accesses ODMR-inferred strains as low as 0.0080% and delivers a volumetric force density of approximately 2.6*10^4 N*m^-3. A micromechanical-to-spin-Hamiltonian framework links on-chip electromechanics, interfacial strain transfer, and strain-spin coupling, enabling the electrical control micromechanical input to be measured directly as spin-frequency response.
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Submitted 26 July, 2026; v1 submitted 23 July, 2026;
originally announced July 2026.
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Charge state tuning of spin defects in hexagonal boron nitride
Authors:
Jules Fraunié,
Tristan Clua-Provost,
Sébastien Roux,
Zhao Mu,
Adrien Delpoux,
Grégory Seine,
Delphine Lagarde,
Kenji Watanabe,
Takashi Taniguchi,
Xavier Marie,
Thomas Poirier,
James H. Edgar,
Jeremie Grisolia,
Benjamin Lassagne,
Alain Claverie,
Vincent Jacques,
Cedric Robert
Abstract:
Boron vacancies in hexagonal boron nitride (hBN) are among the most extensively studied optically active spin defects in van der Waals crystals, due to their promising potential to develop two-dimensional (2D) quantum sensors. In this letter, we demonstrate the tunability of the charge state of boron vacancies in ultrathin hBN layers, revealing a transition from the optically active singly negativ…
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Boron vacancies in hexagonal boron nitride (hBN) are among the most extensively studied optically active spin defects in van der Waals crystals, due to their promising potential to develop two-dimensional (2D) quantum sensors. In this letter, we demonstrate the tunability of the charge state of boron vacancies in ultrathin hBN layers, revealing a transition from the optically active singly negatively charged state to the optically inactive doubly negatively charged state when sandwiched between graphene electrodes. Notably, there is a photoluminescence quenching of a few percent upon the application of a bias voltage between the electrodes. Our findings emphasize the critical importance of considering the charge state of optically active defects in 2D materials, while also showing that the negatively charged boron vacancy remains robust against external perpendicular electric fields. This stability makes it a promising candidate for integration into various van der Waals heterostructures.
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Submitted 30 January, 2025;
originally announced January 2025.
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Isotopic control of the boron-vacancy spin defect in hexagonal boron nitride
Authors:
T. Clua-Provost,
A. Durand,
Z. Mu,
T. Rastoin,
J. Fraunié,
E. Janzen,
H. Schutte,
J. H. Edgar,
G. Seine,
A. Claverie,
X. Marie,
C. Robert,
B. Gil,
G. Cassabois,
V. Jacques
Abstract:
We report on electron spin resonance (ESR) spectroscopy of boron-vacancy (V$_\text{B}^-$) centers hosted in isotopically-engineered hexagonal boron nitride (hBN) crystals. We first show that isotopic purification of hBN with $^{15}$N yields a simplified and well-resolved hyperfine structure of V$_\text{B}^-$ centers, while purification with $^{10}$B leads to narrower ESR linewidths. These results…
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We report on electron spin resonance (ESR) spectroscopy of boron-vacancy (V$_\text{B}^-$) centers hosted in isotopically-engineered hexagonal boron nitride (hBN) crystals. We first show that isotopic purification of hBN with $^{15}$N yields a simplified and well-resolved hyperfine structure of V$_\text{B}^-$ centers, while purification with $^{10}$B leads to narrower ESR linewidths. These results establish isotopically-purified h$^{10}$B$^{15}$N crystals as the optimal host material for future use of V$_\text{B}^-$ spin defects in quantum technologies. Capitalizing on these findings, we then demonstrate optically-induced polarization of $^{15}$N nuclei in h$^{10}$B$^{15}$N, whose mechanism relies on electron-nuclear spin mixing in the V$_\text{B}^-$ ground state. This work opens up new prospects for future developments of spin-based quantum sensors and simulators on a two-dimensional material platform.
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Submitted 13 July, 2023;
originally announced July 2023.
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2022 Roadmap for Materials for Quantum Technologies
Authors:
Christoph Becher,
Weibo Gao,
Swastik Kar,
Christian Marciniak,
Thomas Monz,
John G. Bartholomew,
Philippe Goldner,
Huanqian Loh,
Elizabeth Marcellina,
Kuan Eng Johnson Goh,
Teck Seng Koh,
Bent Weber,
Zhao Mu,
Jeng-Yuan Tsai,
Qimin Yan,
Samuel Gyger,
Stephan Steinhauer,
Val Zwiller
Abstract:
Quantum technologies are poised to move the foundational principles of quantum physics to the forefront of applications. This roadmap identifies some of the key challenges and provides insights on materials innovations underlying a range of exciting quantum technology frontiers. Over the past decades, hardware platforms enabling different quantum technologies have reached varying levels of maturit…
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Quantum technologies are poised to move the foundational principles of quantum physics to the forefront of applications. This roadmap identifies some of the key challenges and provides insights on materials innovations underlying a range of exciting quantum technology frontiers. Over the past decades, hardware platforms enabling different quantum technologies have reached varying levels of maturity. This has allowed for first proof-of-principle demonstrations of quantum supremacy, for example quantum computers surpassing their classical counterparts, quantum communication with reliable security guaranteed by laws of quantum mechanics, and quantum sensors uniting the advantages of high sensitivity, high spatial resolution, and small footprints. In all cases, however, advancing these technologies to the next level of applications in relevant environments requires further development and innovations in the underlying materials. From a wealth of hardware platforms, we select representative and promising material systems in currently investigated quantum technologies. These include both the inherent quantum bit systems as well as materials playing supportive or enabling roles, and cover trapped ions, neutral atom arrays, rare earth ion systems, donors in silicon, color centers and defects in wide-band gap materials, two-dimensional materials and superconducting materials for single-photon detectors. Advancing these materials frontiers will require innovations from a diverse community of scientific expertise, and hence this roadmap will be of interest to a broad spectrum of disciplines.
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Submitted 15 February, 2022;
originally announced February 2022.
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Coherent Manipulation with Resonant Excitation and Single Emitter Creation of Nitrogen Vacancy Centers in 4H Silicon Carbide
Authors:
Zhao Mu,
S. A. Zargaleh,
H. J. von Bardeleben,
Johannes E. Fröch,
Hongbing Cai,
Xinge Yang,
Jianqun Yang,
Xingji Li,
Igor Aharonovich,
Weibo Gao
Abstract:
Silicon carbide (SiC) has become a key player in realization of scalable quantum technologies due to its ability to host optically addressable spin qubits and wafer-size samples. Here, we have demonstrated optically detected magnetic resonance (ODMR) with resonant excitation, and clearly identified the ground state energy levels of the NV centers in 4H-SiC. Coherent manipulation of NV centers in S…
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Silicon carbide (SiC) has become a key player in realization of scalable quantum technologies due to its ability to host optically addressable spin qubits and wafer-size samples. Here, we have demonstrated optically detected magnetic resonance (ODMR) with resonant excitation, and clearly identified the ground state energy levels of the NV centers in 4H-SiC. Coherent manipulation of NV centers in SiC has been achieved with Rabi and Ramsey oscillations. Finally, we show the successful generation and characterization of single nitrogen vacancy (NV) center in SiC employing ion implantation. Our results are highlighting the key role of NV centers in SiC as a potential candidate for quantum information processing.
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Submitted 2 October, 2022; v1 submitted 6 February, 2020;
originally announced February 2020.
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Optical switching of resonance fluorescence from a single germanium vacancy color center in diamond
Authors:
Disheng Chen,
Zhao Mu,
Yu Zhou,
Johannes Froech,
Carole Diederichs,
Nikolay Zheludev,
Igor Aharonovich,
Wei-bo Gao
Abstract:
Scalable quantum photonic networks require coherent excitation of quantum emitters. However, many solid-state systems can undergo a transition to a dark shelving state that inhibits the fluorescence. Here we demonstrate that a controlled gating using a weak non-resonant laser, the resonant excitation can be recovered and amplified for single germanium vacancies (GeVs). Employing the gated resonanc…
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Scalable quantum photonic networks require coherent excitation of quantum emitters. However, many solid-state systems can undergo a transition to a dark shelving state that inhibits the fluorescence. Here we demonstrate that a controlled gating using a weak non-resonant laser, the resonant excitation can be recovered and amplified for single germanium vacancies (GeVs). Employing the gated resonance excitation, we achieve optically stable resonance fluorescence of GeV centers. Our results are pivotal for the deployment of diamond color centers as reliable building blocks for scalable solid state quantum networks.
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Submitted 10 April, 2019; v1 submitted 26 January, 2019;
originally announced January 2019.
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Anti-Stokes excitation of solid-state quantum emitters for nanoscale thermometry
Authors:
Toan Trong Tran,
Blake Regan,
Evgeny A. Ekimov,
Zhao Mu,
Zhou Yu,
Weibo Gao,
Prineha Narang,
Alexander S. Solntsev,
Milos Toth,
Igor Aharonovich,
Carlo Bradac
Abstract:
Color centers in solids are the fundamental constituents of a plethora of applications such as lasers, light emitting diodes and sensors, as well as the foundation of advanced quantum information and communication technologies. Their photoluminescence properties are usually studied under Stokes excitation, in which the emitted photons are at a lower energy than the excitation ones. In this work, w…
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Color centers in solids are the fundamental constituents of a plethora of applications such as lasers, light emitting diodes and sensors, as well as the foundation of advanced quantum information and communication technologies. Their photoluminescence properties are usually studied under Stokes excitation, in which the emitted photons are at a lower energy than the excitation ones. In this work, we explore the opposite Anti-Stokes process, where excitation is performed with lower energy photons. We report that the process is sufficiently efficient to excite even a single quantum system, namely the germanium-vacancy center in diamond. Consequently, we leverage the temperature-dependent, phonon-assisted mechanism to realize an all-optical nanoscale thermometry scheme that outperforms any homologous optical method employed to date. Our results frame a promising approach for exploring fundamental light-matter interactions in isolated quantum systems, and harness it towards the realization of practical nanoscale thermometry and sensing.
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Submitted 11 October, 2018;
originally announced October 2018.