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Condensed Matter > Materials Science

arXiv:2204.07214 (cond-mat)
[Submitted on 14 Apr 2022]

Title:Observation of non-trivial topological electronic structure of orthorhombic SnSe

Authors:H. J. Zheng, W. J. Shi, C. W. Wang, Y. Y. Lv, W. Xia, B. H. Li, F. Wu, S. M. He, K. Huang, S. T. Cui, C. Chen, H. F. Yang, A. J. Liang, M. X. Wang, Z. Sun, S. H. Yao, Y. B. Chen, Y. F. Guo, Q. X. Mi, L. X. Yang, M. S. Bahramy, Z. K. Liu, Y. L. Chen
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Abstract:Topological electronic structures are key to the topological classification of quantum materials and play an important role in their physical properties and applications. Recently, SnSe has attracted great research interests due to its superior thermoelectric performance. However, it's topological nature has long been ignored. In this work, by combining synchrotron-based angle-resolved photoemission spectroscopy and ab-initio calculations, we systematically investigated the topological electronic structure of orthorhombic SnSe. By identifying the continuous gap in the valence bands due to the band inversion and the topological surface states on its (001) surface, we establish SnSe as a strong topological insulator. Furthermore, we studied the evolution of the topological electronic structure and propose the topological phase diagram in SnSe1-xTex. Our work reveals the topological non-trivial nature of SnSe and provides new understandings of its intriguing transport properties.
Comments: 17 pages, 4 figures, accepted for publication in Physical Review Materials
Subjects: Materials Science (cond-mat.mtrl-sci); Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Cite as: arXiv:2204.07214 [cond-mat.mtrl-sci]
  (or arXiv:2204.07214v1 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.2204.07214
arXiv-issued DOI via DataCite

Submission history

From: Huijun Zheng [view email]
[v1] Thu, 14 Apr 2022 20:30:46 UTC (1,080 KB)
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