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Condensed Matter > Materials Science

arXiv:1303.1907 (cond-mat)
[Submitted on 8 Mar 2013]

Title:Anisotropic Current-Controlled Magnetization Reversal in the Ferromagnetic Semiconductor (Ga,Mn)As

Authors:Yuanyuan Li, Y. F. Cao, G. N. Wei, Yanyong Li, Y. Ji, K. Y. Wang, K. W. Edmonds, R. P. Campion, A. W. Rushforth, C. T. Foxon, B. L. Gallagher
View a PDF of the paper titled Anisotropic Current-Controlled Magnetization Reversal in the Ferromagnetic Semiconductor (Ga,Mn)As, by Yuanyuan Li and 10 other authors
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Abstract:Electrical current manipulation of magnetization switching through spin-orbital coupling in ferromagnetic semiconductor (Ga,Mn)As Hall bar devices has been investigated. The efficiency of the current-controlled magnetization switching is found to be sensitive to the orientation of the current with respect to the crystalline axes. The dependence of the spin-orbit effective magnetic field on the direction and magnitude of the current is determined from the shifts in the magnetization switching angle. We find that the strain induced effective magnetic field is about three times as large as the Rashba induced magnetic field in our GaMnAs devices.
Comments: 11 pages,3 figures, submitted to Appl. Phys. Lett
Subjects: Materials Science (cond-mat.mtrl-sci); Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Cite as: arXiv:1303.1907 [cond-mat.mtrl-sci]
  (or arXiv:1303.1907v1 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.1303.1907
arXiv-issued DOI via DataCite
Journal reference: Applied Physics Letters 103, 022401 (2013)
Related DOI: https://doi.org/10.1063/1.4813085
DOI(s) linking to related resources

Submission history

From: Kaiyou Wang [view email]
[v1] Fri, 8 Mar 2013 08:06:10 UTC (119 KB)
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