A 26-GHz-Band High Back-Off Efficiency Stacked-FET Power Amplifier IC with Adaptively Controlled Bias and Load Circuits in 45-nm CMOS SOI.

Toshihiko Yoshimasu Mengchu Fang Tsuyoshi Sugiura A 26-GHz-Band High Back-Off Efficiency Stacked-FET Power Amplifier IC with Adaptively Controlled Bias and Load Circuits in 45-nm CMOS SOI. 477-483 2021 104-A IEICE Trans. Fundam. Electron. Commun. Comput. Sci. 2 http://search.ieice.org/bin/summary.php?id=e104-a_2_477 db/journals/ieiceta/ieiceta104.html#YoshimasuFS21