Extended-SWIR GeSn LEDs with reduced footprint and power consumption
Authors:
Mahmoud R. M. Atalla,
Youngmin Kim,
Simone Assali,
Daniel Burt,
Donguk Nam,
Oussama Moutanabbir
Abstract:
CMOS-compatible short- and mid-wave infrared emitters are highly coveted for the monolithic integration of silicon-based photonic and electronic integrated circuits to serve a myriad of applications in sensing and communications. In this regard, a group IV germanium-tin (GeSn) material epitaxially grown on silicon (Si) emerges as a promising platform to implement tunable infrared light emitters. I…
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CMOS-compatible short- and mid-wave infrared emitters are highly coveted for the monolithic integration of silicon-based photonic and electronic integrated circuits to serve a myriad of applications in sensing and communications. In this regard, a group IV germanium-tin (GeSn) material epitaxially grown on silicon (Si) emerges as a promising platform to implement tunable infrared light emitters. Indeed, upon increasing the Sn content, the bandgap of GeSn narrows and becomes direct, making this material system suitable for developing an efficient silicon-compatible emitter. With this perspective, microbridge PIN GeSn LEDs with a small footprint of $1,520$ $μ$m$^2$ are demonstrated and their operation performance is investigated. The spectral analysis of the electroluminescence emission exhibits a peak at $2.31$ $μ$m and it red-shifts slightly as the driving current increases. It is found that the microbridge LED operates at a dissipated power as low as $10.8$ W at room temperature and just $3$ W at $80$ K. This demonstrated low operation power is comparable to that reported for LEDs having a significantly larger footprint reaching $10^6$ $μ$m$^2$. The efficient thermal dissipation of the current design helped to reduce the heat-induced optical losses, thus enhancing light emission. Further performance improvements are envisioned through thermal and optical simulations of the microbridge design. The use of GeSnOI substrate for developing a similar device is expected to improve optical confinement for the realization of electrically driven GeSn lasers.
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Submitted 12 February, 2023;
originally announced February 2023.
Triaxially strained suspended graphene for large-area pseudo-magnetic fields
Authors:
M. Luo,
H. Sun,
Z. Qi,
K. Lu,
M. Chen,
D. Kang,
Y. Kim,
D. Burt,
X. Yu,
C. Wang,
Y. D. Kim,
H. Wang,
Q. -J. Wang,
D. Nam
Abstract:
Strain-engineered graphene has garnered much attention recently owing to the possibilities of creating substantial energy gaps enabled by pseudo-magnetic fields. While theoretical works proposed the possibility of creating large-area pseudo-magnetic fields by straining monolayer graphene along three crystallographic directions, clear experimental demonstration of such promising devices remains elu…
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Strain-engineered graphene has garnered much attention recently owing to the possibilities of creating substantial energy gaps enabled by pseudo-magnetic fields. While theoretical works proposed the possibility of creating large-area pseudo-magnetic fields by straining monolayer graphene along three crystallographic directions, clear experimental demonstration of such promising devices remains elusive. Herein, we experimentally demonstrate a triaxially strained suspended graphene structure that has the potential to possess large-scale and quasi-uniform pseudo-magnetic fields. Our structure employs uniquely designed metal electrodes that function both as stressors and metal contacts for current injection. Raman characterization and tight-binding simulations suggest the possibility of achieving pseudo-magnetic fields over a micrometer-scale area. Current-voltage measurements confirm an efficient current injection into graphene, showing the potential of our devices for a new class of optoelectronic applications. We also theoretically propose a photonic crystal-based laser structure that obtains strongly localized optical fields overlapping with the spatial area under uniform pseudo-magnetic fields, thus presenting a practical route towards the realization of graphene lasers.
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Submitted 9 February, 2022; v1 submitted 8 October, 2021;
originally announced October 2021.