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Extinction Coefficients of CdSe, CdS, and CdTe Nanoplatelets in Solution: A Practical Tool for Concentration Determination
Authors:
Michael H. Stewart,
Michael W. Swift,
Farwa Awan,
Liam Burke,
Christopher M. Green,
Barbara A. Marcheschi,
Igor L. Medintz,
Todd D. Krauss,
Alexander L. Efros
Abstract:
Semiconductor nanoplatelets possess exceptional optical properties that make them promising candidates for next-generation optoelectronic applications. However, unlike quantum dots where absorption spectroscopy alone can determine both size and concentration, nanoplatelets present a significant characterization challenge: the absorption peak position reveals only thickness, providing no informatio…
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Semiconductor nanoplatelets possess exceptional optical properties that make them promising candidates for next-generation optoelectronic applications. However, unlike quantum dots where absorption spectroscopy alone can determine both size and concentration, nanoplatelets present a significant characterization challenge: the absorption peak position reveals only thickness, providing no information about lateral dimensions or concentration. This limitation forces researchers to rely on time-consuming and costly elemental analysis techniques for complete sample characterization. Here, we present an experimentally verified theoretical framework that predicts the frequency-dependent absorption coefficient of randomly oriented CdSe, CdS, and CdTe nanoplatelets, enabling concentration determination from absorption measurements and lateral size estimates. Our model shows that the integrated absorption coefficient depends universally on nanoplatelet surface area and thickness, yielding a practical tool to extract concentrations without laborious elemental analysis. This approach bridges the characterization gap between quantum dots and nanoplatelets, offering a streamlined method for rapid sample analysis that could accelerate nanoplatelet research and applications.
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Submitted 21 October, 2025;
originally announced October 2025.
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Double-Rashba materials for nanocrystals with bright ground-state excitons
Authors:
Michael W. Swift,
Peter C. Sercel,
Alexander L. Efros,
John L. Lyons,
David J. Norris
Abstract:
While nanoscale semiconductor crystallites provide versatile fluorescent materials for light-emitting devices, such nanocrystals suffer from the "dark exciton"$\unicode{x2014}$an optically inactive electronic state into which the nanocrystal relaxes before emitting. Recently, a theoretical mechanism was discovered that can potentially defeat the dark exciton. The Rashba effect can invert the order…
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While nanoscale semiconductor crystallites provide versatile fluorescent materials for light-emitting devices, such nanocrystals suffer from the "dark exciton"$\unicode{x2014}$an optically inactive electronic state into which the nanocrystal relaxes before emitting. Recently, a theoretical mechanism was discovered that can potentially defeat the dark exciton. The Rashba effect can invert the order of the lowest-lying levels, creating a bright excitonic ground state. To identify materials that exhibit this behavior, here we perform an extensive high-throughput computational search of two large open-source materials databases. Based on a detailed understanding of the Rashba mechanism, we define proxy criteria and screen over 500,000 solids, generating 173 potential "bright-exciton" materials. We then refine this list with higher-level first-principles calculations to obtain 28 candidates. To confirm the potential of these compounds, we select five and develop detailed effective-mass models to determine the nature of their lowest-energy excitonic state. We find that four of the five solids (BiTeCl, BiTeI, Ga$_2$Te$_3$, and KIO$_3$) can yield bright ground-state excitons. Our approach thus reveals promising materials for future experimental investigation of bright-exciton nanocrystals.
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Submitted 30 October, 2023;
originally announced October 2023.
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Comment on "Origin of correlated isolated flat bands in copper-substituted lead phosphate apatite"
Authors:
Michael W. Swift,
John L. Lyons
Abstract:
In this comment on "Origin of correlated isolated flat bands in copper-substituted lead phosphate apatite" (arXiv:2307.16892 [cond-mat.supr-con]), we discuss the flat half-occupied two-band manifold that appears in $\mathrm{Pb}_9\mathrm{Cu}(\mathrm{PO}_4)_6(\mathrm{OH})_2$ when using a semilocal DFT functional. We argue that the flat band is an artifact of the functional's overestimation of the en…
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In this comment on "Origin of correlated isolated flat bands in copper-substituted lead phosphate apatite" (arXiv:2307.16892 [cond-mat.supr-con]), we discuss the flat half-occupied two-band manifold that appears in $\mathrm{Pb}_9\mathrm{Cu}(\mathrm{PO}_4)_6(\mathrm{OH})_2$ when using a semilocal DFT functional. We argue that the flat band is an artifact of the functional's overestimation of the energy of the oxygen p states in the valence band. When using the HSE hybrid functional, the energy of the oxygen p states is reduced, and the copper-derived manifold splits into one fully occupied and one empty band. While these results do not rule out the possibility of superconductivity in doped LK-99, they do predict that stoichiometric $\mathrm{Pb}_9\mathrm{Cu}(\mathrm{PO}_4)_6(\mathrm{OH})_2$ is an insulator, not a superconductor. Furthermore, we have shown that future first-principles studies of these materials should employ hybrid functionals or other advanced methods to ensure that the oxygen-derived valence-band energies are correctly described.
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Submitted 15 August, 2023;
originally announced August 2023.
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Lone-Pair Stereochemistry Induces Ferroelectric Distortion and the Rashba Effect in Inorganic Halide Perovskites
Authors:
Michael W. Swift,
John L. Lyons
Abstract:
The lone-pair s states of germanium, tin, and lead underlie many of the unconventional properties of the inorganic metal halide perovskites. Dynamic stereochemical expression of the lone pairs is well established for perovskites based on all three metals, but previously only the germanium perovskites were thought to express the lone pair crystallographically. In this work, we use advanced first-pr…
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The lone-pair s states of germanium, tin, and lead underlie many of the unconventional properties of the inorganic metal halide perovskites. Dynamic stereochemical expression of the lone pairs is well established for perovskites based on all three metals, but previously only the germanium perovskites were thought to express the lone pair crystallographically. In this work, we use advanced first-principles calculations with a hybrid functional and spin-orbit coupling to predict stable monoclinic polar phases of $\mathrm{CsSnI}_3$ and $\mathrm{CsSnBr}_3$, which exhibit a ferroelectric distortion driven by stereochemical expression of the tin lone pair. We also predict similar metastable ferroelectric phases of $\mathrm{CsPbI}_3$ and $\mathrm{CsPbBr}_3$. In addition to ferroelectricity, these phases exhibit the Rashba effect. Spin splitting in both the conduction and valence bands suggests that nanostructures based on these phases could host bright ground-state excitons. Finally, we discuss paths toward experimental realization of these phases via electric fields and tensile strain.
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Submitted 4 August, 2023;
originally announced August 2023.
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Dark and Bright Excitons in Halide Perovskite Nanoplatelets
Authors:
Moritz Gramlich,
Michael W. Swift,
Carola Lampe,
Markus Döblinger,
John L. Lyons,
Alexander L. Efros,
Peter C. Sercel,
Alexander S. Urban
Abstract:
Semiconductor nanoplatelets (NPLs), with their large exciton binding energy, narrow photoluminescence (PL), and absence of dielectric screening for photons emitted normal to the NPL surface, could be expected to become the fastest luminophores amongst all colloidal nanostructures. However, super-fast emission is suppressed by a dark (optically passive) exciton ground state, substantially split fro…
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Semiconductor nanoplatelets (NPLs), with their large exciton binding energy, narrow photoluminescence (PL), and absence of dielectric screening for photons emitted normal to the NPL surface, could be expected to become the fastest luminophores amongst all colloidal nanostructures. However, super-fast emission is suppressed by a dark (optically passive) exciton ground state, substantially split from a higher-lying bright (optically active) state. Here, the exciton fine structure in 2-8 monolayer (ML) thick Cs_{n-1}Pb_nBr_{3n+1} NPLs is revealed by merging temperature-resolved PL spectra and time-resolved PL decay with an effective mass modeling taking quantum confinement and dielectric confinement anisotropy into account. This approach exposes a thickness-dependent bright-dark exciton splitting reaching 32.3meV for the 2ML NPLs. The model also reveals a 5-16 meV splitting of the bright exciton states with transition dipoles polarized parallel and perpendicular to the NPL surfaces, the order of which is reversed for the thinnest NPLs, as confirmed by TR-PL measurements. Accordingly, the individual bright states must be taken into account, while the dark exciton state strongly affects the optical properties of the thinnest NPLs even at room temperature. Significantly, the derived model can be generalized for any isotropically or anisotropically confined nanostructure.
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Submitted 1 October, 2021;
originally announced October 2021.
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Understanding Carbon Contamination in Proton Conducting Oxides
Authors:
Andrew J. E. Rowberg,
Michael W. Swift,
Chris G. Van de Walle
Abstract:
Carbon contamination is a significant concern for proton-conducting oxides in the cerate and zirconate family, particularly for BaCeO$_3$. Here, we use first-principles calculations to evaluate carbon stability in SrCeO$_3$, BaCeO$_3$, SrZrO$_3$, and BaZrO$_3$. The cerates require more carbon-poor environments to prevent carbonate formation, though this requirement can be loosened through the use…
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Carbon contamination is a significant concern for proton-conducting oxides in the cerate and zirconate family, particularly for BaCeO$_3$. Here, we use first-principles calculations to evaluate carbon stability in SrCeO$_3$, BaCeO$_3$, SrZrO$_3$, and BaZrO$_3$. The cerates require more carbon-poor environments to prevent carbonate formation, though this requirement can be loosened through the use of more oxygen-poor growth conditions. Carbonate formation is not the only concern, however. We find that interstitial carbon has lower formation energies in the cerates relative to the zirconates, leading to higher carbon concentrations that compete with the desired oxygen vacancy formation. We also examine the mobility of carbon interstitials, finding that both migration barriers and binding energies to acceptors are lower in the cerates. As a result, the cerates are likely to degrade when exposed to carbon at operating temperatures. Our results show definitively why the cerates are less stable than the zirconates with respect to carbon and elucidate the mechanisms contributing to their instability, thereby helping to explain why alloying with zirconium will enhance their operational efficiency.
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Submitted 10 May, 2021;
originally announced May 2021.
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First-principles prediction of potentials and space-charge layers in all-solid-state batteries
Authors:
Michael W. Swift,
Yue Qi
Abstract:
As all-solid-state batteries (SSBs) develop as an alternative to traditional cells, a thorough theoretical understanding of driving forces behind battery operation is needed. We present a fully first-principles-informed model of potential profiles in SSBs and apply the model to the Li/LiPON/$\text{Li}_x\text{CoO}_2$ system. The model predicts interfacial potential drops driven by both electron tra…
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As all-solid-state batteries (SSBs) develop as an alternative to traditional cells, a thorough theoretical understanding of driving forces behind battery operation is needed. We present a fully first-principles-informed model of potential profiles in SSBs and apply the model to the Li/LiPON/$\text{Li}_x\text{CoO}_2$ system. The model predicts interfacial potential drops driven by both electron transfer and Li$^+$ space-charge layers that vary with the SSB's state of charge. The results suggest lower electronic ionization potential in the solid electrolyte favors Li$^+$ transport, leading to higher discharge power.
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Submitted 2 April, 2019; v1 submitted 28 February, 2019;
originally announced February 2019.
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Sr$_3$Ir$_2$O$_7$F$_2$: Topochemical conversion of a relativistic Mott state into a spin-orbit driven band insulator
Authors:
Christi Peterson,
Michael W. Swift,
Zach Porter,
Raphaele J. Clement,
Guang Wu,
G. H. Ahn,
S. J. Moon,
B. C. Chakoumakos,
Jacob P. C. Ruff,
Huibo Cao,
Chris Van de Walle,
Stephen D. Wilson
Abstract:
The topochemical transformation of single crystals of Sr$_3$Ir$_2$O$_7$ into Sr$_3$Ir$_2$O$_7$F$_2$ is reported via fluorine insertion. Characterization of the newly formed Sr$_3$Ir$_2$O$_7$F$_2$ phase shows a nearly complete oxidation of Ir$^{4+}$ cations into Ir$^{5+}$ that in turn drives the system from an antiferromagnetic Mott insulator with a half-filled J$_{eff}=1/2$ band into a nonmagnetic…
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The topochemical transformation of single crystals of Sr$_3$Ir$_2$O$_7$ into Sr$_3$Ir$_2$O$_7$F$_2$ is reported via fluorine insertion. Characterization of the newly formed Sr$_3$Ir$_2$O$_7$F$_2$ phase shows a nearly complete oxidation of Ir$^{4+}$ cations into Ir$^{5+}$ that in turn drives the system from an antiferromagnetic Mott insulator with a half-filled J$_{eff}=1/2$ band into a nonmagnetic $J=0$ band insulator. First principles calculations reveal a remarkably flat insertion energy that locally drives the fluorination process to completion. Band structure calculations support the formation of a band insulator whose charge gap relies on the strong spin-orbit coupling inherent to the Ir metal ions of this compound.
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Submitted 6 October, 2018;
originally announced October 2018.
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Electron doping in $\text{Sr}_3\text{Ir}_2\text{O}_7$: collapse of band gap and magnetic order
Authors:
Michael W. Swift,
Zach Porter,
Stephen D. Wilson,
Chris G. Van de Walle
Abstract:
The electron-doping-driven collapse of the charge gap and staggered magnetization of the spin-orbit-assisted Mott insulator Sr$_{3}$Ir$_{2}$O$_{7}$ is explored via first-principles computational methods. In the antiferromagnetic phase, the gap and magnetization are observed to decrease slowly with increasing doping, with an abrupt collapse of both the gap and the magnetization at an electron conce…
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The electron-doping-driven collapse of the charge gap and staggered magnetization of the spin-orbit-assisted Mott insulator Sr$_{3}$Ir$_{2}$O$_{7}$ is explored via first-principles computational methods. In the antiferromagnetic phase, the gap and magnetization are observed to decrease slowly with increasing doping, with an abrupt collapse of both the gap and the magnetization at an electron concentration corresponding to 4.8\% substitution of Sr with La, in excellent agreement with experiment. Additionally, we describe the structural effects of electron doping in Sr$_{3}$Ir$_{2}$O$_{7}$ via a competition between the steric effect from smaller La atoms substituted within the lattice and the dominant doping-driven deformation-potential effect. Curiously, our first-principles calculations fail to capture the low-temperature structural distortion reported in the low-gap phase of Sr$_{3}$Ir$_{2}$O$_{7}$, supporting the notion that this distortion arises as a secondary manifestation of an unconventional electronic order parameter in this material.
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Submitted 31 July, 2018; v1 submitted 11 November, 2017;
originally announced November 2017.
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Linear hyperfine tuning of donor spins in silicon using hydrostatic strain
Authors:
John Mansir,
Pierandrea Conti,
Zaiping Zeng,
Jarryd J. Pla,
Patrice Bertet,
Michael W. Swift,
Chris G. Van de Walle,
Mike L. W. Thewalt,
Benoit Sklenard,
Yann-Michel Niquet,
John J. L. Morton
Abstract:
We experimentally study the coupling of Group V donor spins in silicon to mechanical strain, and measure strain-induced frequency shifts which are linear in strain, in contrast to the quadratic dependence predicted by the valley repopulation model (VRM), and therefore orders of magnitude greater than that predicted by the VRM for small strains $|\varepsilon| < 10^{-5}$. Through both tight-binding…
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We experimentally study the coupling of Group V donor spins in silicon to mechanical strain, and measure strain-induced frequency shifts which are linear in strain, in contrast to the quadratic dependence predicted by the valley repopulation model (VRM), and therefore orders of magnitude greater than that predicted by the VRM for small strains $|\varepsilon| < 10^{-5}$. Through both tight-binding and first principles calculations we find that these shifts arise from a linear tuning of the donor hyperfine interaction term by the hydrostatic component of strain and achieve semi-quantitative agreement with the experimental values. Our results provide a framework for making quantitative predictions of donor spins in silicon nanostructures, such as those being used to develop silicon-based quantum processors and memories. The strong spin-strain coupling we measure (up to 150~GHz per strain, for Bi-donors in Si), offers a method for donor spin tuning --- shifting Bi donor electron spins by over a linewidth with a hydrostatic strain of order $10^{-6}$ --- as well as opportunities for coupling to mechanical resonators.
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Submitted 23 March, 2018; v1 submitted 2 October, 2017;
originally announced October 2017.
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Hydrogen Diffusion and Stabilization in Single-crystal VO2 Micro/nanobeams by Direct Atomic Hydrogenation
Authors:
Jian Lin,
Heng Ji,
Michael W. Swift,
Will J. Hardy,
Zhiwei Peng,
Xiujun Fan,
Andriy H. Nevidomskyy,
James M. Tour,
Douglas Natelson
Abstract:
We report measurements of the diffusion of atomic hydrogen in single crystalline VO2 micro/nanobeams by direct exposure to atomic hydrogen, without catalyst. The atomic hydrogen is generated by a hot filament, and the doping process takes place at moderate temperature (373 K). Undoped VO2 has a metal-to-insulator phase transition at ~340 K between a high-temperature, rutile, metallic phase and a l…
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We report measurements of the diffusion of atomic hydrogen in single crystalline VO2 micro/nanobeams by direct exposure to atomic hydrogen, without catalyst. The atomic hydrogen is generated by a hot filament, and the doping process takes place at moderate temperature (373 K). Undoped VO2 has a metal-to-insulator phase transition at ~340 K between a high-temperature, rutile, metallic phase and a low-temperature, monoclinic, insulating phase with a resistance exhibiting a semiconductor-like temperature dependence. Atomic hydrogenation results in stabilization of the metallic phase of VO2 micro/nanobeams down to 2 K, the lowest point we could reach in our measurement setup. Based on observing the movement of the hydrogen diffusion front in single crystalline VO2 beams, we estimate the diffusion constant for hydrogen along the c-axis of the rutile phase to be 6.7 x 10^{-10} cm^2/s at approximately 373 K, exceeding the value in isostructural TiO2 by ~ 38x. Moreover, we find that the diffusion constant along the c-axis of the rutile phase exceeds that along the equivalent a-axis of the monoclinic phase by at least three orders of magnitude. This remarkable change in kinetics must originate from the distortion of the "channels" when the unit cell doubles along this direction upon cooling into the monoclinic structure. Ab initio calculation results are in good agreement with the experimental trends in the relative kinetics of the two phases. This raises the possibility of a switchable membrane for hydrogen transport.
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Submitted 16 September, 2014;
originally announced September 2014.
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In situ diffraction study of catalytic hydrogenation of VO2: Stable phases and origins of metallicity
Authors:
Yaroslav Filinchuk,
Nikolay A. Tumanov,
Voraksmy Ban,
Heng Ji,
Jiang Wei,
Michael W. Swift,
Andriy H. Nevidomskyy,
Douglas Natelson
Abstract:
Controlling electronic population through chemical doping is one way to tip the balance between competing phases in materials with strong electronic correlations. Vanadium dioxide exhibits a first-order phase transition at around 338 K between a high temperature, tetragonal, metallic state (T) and a low temperature, monoclinic, insulating state (M1), driven by electron-electron and electron-lattic…
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Controlling electronic population through chemical doping is one way to tip the balance between competing phases in materials with strong electronic correlations. Vanadium dioxide exhibits a first-order phase transition at around 338 K between a high temperature, tetragonal, metallic state (T) and a low temperature, monoclinic, insulating state (M1), driven by electron-electron and electron-lattice interactions. Intercalation of VO2 with atomic hydrogen has been demonstrated, with evidence that this doping suppresses the transition. However, the detailed effects of intercalated H on the crystal and electronic structure of the resulting hydride have not been previously reported. Here we present synchrotron and neutron diffraction studies of this material system, mapping out the structural phase diagram as a function of temperature and hydrogen content. In addition to the original T and M1 phases, we find two orthorhombic phases, O1 and O2, which are stabilized at higher hydrogen content. We present density functional calculations that confirm the metallicity of these states and discuss the physical basis by which hydrogen stabilizes conducting phases, in the context of the metal-insulator transition.
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Submitted 10 June, 2014;
originally announced June 2014.