Showing 1–50 of 168 results for author: Muller, D

Three-dimensional imaging of oxygen dopant distribution in Sr$_2$CuO$_{3+δ}$ by electron ptychography

Authors: Hongbin Yang, Jinkwon Kim, Desheng Ma, Dasol Yoon, Darrell G. Schlom, David A. Muller

Abstract: Oxygen dopants play a critical role in tuning the properties of cuprate superconductors, yet it is challenging to visualize them at the atomic scale. Here, we use multislice electron ptychography to directly image oxygen dopants in a Sr2CuO3+delta film. We observe oxygen dopants at interstitial sites between the Cu-O chains, with a strong preference for clustering in tensile-strained regions, whic… ▽ More Oxygen dopants play a critical role in tuning the properties of cuprate superconductors, yet it is challenging to visualize them at the atomic scale. Here, we use multislice electron ptychography to directly image oxygen dopants in a Sr2CuO3+delta film. We observe oxygen dopants at interstitial sites between the Cu-O chains, with a strong preference for clustering in tensile-strained regions, which are often associated with dislocations and interfacial steps. These findings indicate that the oxygen dopant distribution in cuprates is not random but rather sensitive to strain field, suggesting strain as a doping tuning parameter. △ Less

Submitted 20 August, 2026; originally announced August 2026.

High-Q superconducting microwave resonators using MBE titanium nitride

Authors: Anand Ithepalli, Haoran Lu, Eegene Clara Chung, Xiangqin Wang, Amit Rohan Rajapurohita, Keun-Yeol Park, Celesta S. Chang, Peter McMahon, Huili Grace Xing, David Muller, Valla Fatemi, Debdeep Jena

Abstract: Using molecular beam epitaxy, we have realized thin films of titanium nitride (TiN) on c-plane sapphire that exhibit the lowest observed full-width at half maximum X-ray rocking curve width of 18 arcsec. Though the (111) oriented TiN exhibits an abrupt and crystalline interface with sapphire, for the first time we observe sub-surface defects in the sapphire substrate, which nucleate structural def… ▽ More Using molecular beam epitaxy, we have realized thin films of titanium nitride (TiN) on c-plane sapphire that exhibit the lowest observed full-width at half maximum X-ray rocking curve width of 18 arcsec. Though the (111) oriented TiN exhibits an abrupt and crystalline interface with sapphire, for the first time we observe sub-surface defects in the sapphire substrate, which nucleate structural defects in the epitaxial TiN layer. Using quarter-wavelength coplanar waveguide (CPW) resonators in a 3 \textmu m/6 \textmu m/3 \textmu m gap/strip/gap lines in a hanger geometry, we find the internal quality factor of the TiN resonators to be $>10^{6}$ in the single-photon $\langle n \rangle \sim 1$ limit at 5.8 GHz and 10 mK, rising to $>20 \times 10^{6}$ at $\langle n \rangle \sim 10^{6}$. The results are of high interest for applications of superconducting TiN in several areas, and provide a path towards epitaxial Josephson junctions with crystalline barriers in the future for high coherence qubits. △ Less

Submitted 19 July, 2026; v1 submitted 16 July, 2026; originally announced July 2026.

Comments: 8 pages and 5 figures

Persistent structural distortions and absent superconductivity in trilayer nickelate thin films

Authors: Abigail Y. Jiang, Maria Bambrick-Santoyo, Lopa Bhatt, Kyeong-Yoon Baek, Yi-Feng Zhao, Dan Ferenc Segedin, Ari B. Turkiewicz, Jenna Hatmin, Grace A. Pan, Suchismita Sarker, Donald A. Walko, Charles M. Brooks, David A. Muller, Berit H. Goodge, Hua Zhou, Antia S. Botana, Julia A. Mundy

Abstract: A new family of high-temperature superconductors was recently discovered in the $n=2,3$ Ruddlesden-Popper nickelates, where superconductivity emerges concomitant with suppression of parent density waves and structural octahedral rotations under hydrostatic pressure. Intriguingly, compressive strain mimics the structural effects of pressure in the $n=2$ phase, yielding ambient-pressure superconduct… ▽ More A new family of high-temperature superconductors was recently discovered in the $n=2,3$ Ruddlesden-Popper nickelates, where superconductivity emerges concomitant with suppression of parent density waves and structural octahedral rotations under hydrostatic pressure. Intriguingly, compressive strain mimics the structural effects of pressure in the $n=2$ phase, yielding ambient-pressure superconductivity. However, analogous strain-stabilized superconductivity has not been realized in the $n=3$. Here, we use atomically-precise synthesis, transport, picoscale electron microscopy, and synchrotron X-ray diffraction to probe $n=3$ La$_4$Ni$_3$O$_{10}$ thin films. Although compressive strain suppresses density wave order, we do not observe superconductivity even under the largest strain state. Importantly, we identify a structural distortion unique to strained $n=3$ thin films that may inhibit superconductivity: persistent, layer-inequivalent octahedral rotations around the $c$-axis. Our results highlight key differences between the $n=3$ and $n=2$ systems, suggesting that ambient-pressure superconductivity in the $n=3$ may require new methods beyond epitaxial strain engineering. △ Less

Submitted 18 June, 2026; originally announced June 2026.

Comments: A.Y.J. and M.B.S. contributed equally

Breaking symmetry to create a parallel-plate varactor dielectric with unparalleled microwave performance

Authors: Florian Bergmann, Matthew R. Barone, Zishen Tian, Aiden Ross, Gerhard H. Olsen, Meagan C. Papac, Samuel Freed, Bryan T. Bosworth, Nicholas R. Jungwirth, Eric J. Marksz, Tomasz Karpisz, Noah Schnitzer, Lopa Bhatt, David A. Muller, Dylan Sotir, Akash Surampalli, Veronica Goian, Christelle Kadlec, Stanislav Kamba, Asher Hansen, Nathan Rongitsch, Dmitri A. Tenne, Ichiro Takeuchi, Long-Qing Chen, Lane W. Martin , et al. (2 additional authors not shown)

Abstract: Voltage-tunable capacitors (varactors) are key to microwave circuits. Tunable dielectric varactors outperform competing technologies in almost every relevant metric but usually suffer from high dielectric loss. In contrast, Ruddlesden-Popper (RPs) dielectric thin films have remarkably low microwave loss. Unfortunately, their crystallographic symmetry has until recently dictated an in-plane device… ▽ More Voltage-tunable capacitors (varactors) are key to microwave circuits. Tunable dielectric varactors outperform competing technologies in almost every relevant metric but usually suffer from high dielectric loss. In contrast, Ruddlesden-Popper (RPs) dielectric thin films have remarkably low microwave loss. Unfortunately, their crystallographic symmetry has until recently dictated an in-plane device structure, precluding the favorable out-of-plane parallel-plate varactor design for minimized size and maximized electric field in the tunable dielectric. Guided by theory, we report RPs akin to the widely studied tunable microwave dielectric BaxSr1-xTiO3. Assembling these same atoms into the first RP phase with broken out-of-plane symmetry, we achieve a low-loss, out-of-plane tunable dielectric thin film. The highest performing film, (ATiO3)nAO film with A = Ba0.45Sr0.55 and n = 8, unlocks a tenfold improvement in the figure of merit for out-of-plane tunable dielectrics at 10 GHz, paving the way for a new generation of tunable monolithic microwave integrated circuits. △ Less

Submitted 18 June, 2026; originally announced June 2026.

Comments: 63 pages with 34 main manuscript pages and supplementary

Journal ref: Nat Electron (2026)

Synthesis and Characterization of Atomically-Sharp Superconductor-Dielectric Interface

Authors: Nathan Sitaraman, Zhaslan Baraissov, Alexis Grassl, Hongbin Yang, Daniel Tong, David Muller, Matthias Liepe

Abstract: Modification of superconductor-dielectric interfaces is known to strongly impact coherence times of superconducting quantum devices. This relationship is thought to arise from differences in the concentration of "two-level system" defects in the disordered dielectrics and superconductor-dielectric interfaces; these defects couple to electromagnetic modes in the device and cause dissipation. Zircon… ▽ More Modification of superconductor-dielectric interfaces is known to strongly impact coherence times of superconducting quantum devices. This relationship is thought to arise from differences in the concentration of "two-level system" defects in the disordered dielectrics and superconductor-dielectric interfaces; these defects couple to electromagnetic modes in the device and cause dissipation. Zirconium oxide barrier layers on niobium have emerged as a promising pathway to low-loss interfaces in recent years, evidently due to the crystalline nature of these layers in comparison to the amorphous niobium native oxide. We explain the unique ability of zirconium oxide to form a crystalline layer, to maintain a sharp interface with metallic niobium, and to prevent niobium oxide re-growth in terms of the chemical properties of ZrO$_2$ and the Nb-Zr-O ternary system. We demonstrate a new method to grow air-stable zirconium oxide layers on niobium with a higher level of crystallinity and a sharper oxide-metal interface than previously shown, and provide the first comprehensive microscopic analysis of ZrO$_2$ capping layer properties. These developments pave the way toward vital performance advances in superconducting quantum devices. △ Less

Submitted 8 June, 2026; originally announced June 2026.

Crystallography of periodic nanotextures in a strained Mott insulator

Authors: Benjamin Z. Gregory, Yorick A. Birkhölzer, Noah Schnitzer, Ziming Shao, Jeff Hodgson, Suchismita Sarker, Jacob P. Ruff, Berit H. Goodge, David A. Muller, Kyle M. Shen, Darrell G. Schlom, Andrej Singer

Abstract: Here we investigate stripes of alternating structural phases spontaneously forming in epitaxially strained $Ca_2RuO_4$ thin films below the metal-insulator transition. Using large-volume X-ray reciprocal-space mapping, we show that satellite-pattern intensities across 24 symmetry-inequivalent Bragg reflections collapse onto a single parameter-free curve. The collapse identifies a coherent martensi… ▽ More Here we investigate stripes of alternating structural phases spontaneously forming in epitaxially strained $Ca_2RuO_4$ thin films below the metal-insulator transition. Using large-volume X-ray reciprocal-space mapping, we show that satellite-pattern intensities across 24 symmetry-inequivalent Bragg reflections collapse onto a single parameter-free curve. The collapse identifies a coherent martensitic laminate of few-nm-wide domains separated by ${012}$ interfaces, with displacements along $\left\langle01\bar{2}\right\rangle$. Satellite-extinction analysis demonstrates that both coexisting phases retain the bulk orthorhombic space group despite the pseudocubic $LaAlO_3$ substrate, biaxial epitaxial strain, and intrinsic strain at the interfaces. Classical invariant-plane-strain crystallography thus governs the nanoscale domain geometry of a Mott insulator with intertwined magnetic, electronic, and lattice order. △ Less

Submitted 8 June, 2026; originally announced June 2026.

Defect-engineered scaling of lead-free ferroelectrics with ultralow-voltage switching

Authors: Reza Ghanbari, Jiayue Wang, Harikrishnan KP, Zixiao Shi, Aarushi Khandelwal, Konnor Koons, Eli Rodrigues, Tao Zhou, Martin Holt, David A. Muller, Harold Y. Hwang, Ruijuan Xu

Abstract: Scaling ferroelectrics to nanometer thicknesses remains a central challenge for low-power, nonvolatile electronics, as leakage currents increasingly dominate with reduced dimensions. Alkali-based, lead-free ferroelectrics offer an environmentally sustainable alternative to lead-based systems, yet their scaling is severely limited by leakage arising from volatile alkali constituents. Here, we show… ▽ More Scaling ferroelectrics to nanometer thicknesses remains a central challenge for low-power, nonvolatile electronics, as leakage currents increasingly dominate with reduced dimensions. Alkali-based, lead-free ferroelectrics offer an environmentally sustainable alternative to lead-based systems, yet their scaling is severely limited by leakage arising from volatile alkali constituents. Here, we show that this intrinsic limitation can be transformed into an advantageous degree of freedom through defect engineering. By precisely modulating alkali deficiency during thin-film synthesis, we engineer clustered defect complexes that function as deep trap states, strongly suppressing leakage and enabling robust ferroelectric operation in ultrathin films down to the sub-10 nm regime at voltages below 100 mV. Our results establish defect-enabled scaling as a viable pathway for advancing environmentally benign ferroelectrics toward ultra-low-power, non-volatile electronic technologies. △ Less

Submitted 28 May, 2026; originally announced May 2026.

Comments: 23 pages, 4 figures

Stacking-order-dependent electronic properties of MoTe2/WSe2 moiré bilayers

Authors: Zhongdong Han, Wenjin Zhao, Eegene Clara Chung, Chia-Hao Lee, Zui Tao, Zhengchao Xia, Yichi Zhang, Yiyu Xia, Jekwan Lee, Bowen Shen, Ariana Ray, Yu-Tsun Shao, Tingxin Li, Shengwei Jiang, Yihang Zeng, Kenji Watanabe, Takashi Taniguchi, David Muller, Kin Fai Mak, Jie Shan

Abstract: Transition metal dichalcogenide (TMD) moiré bilayers have realized a wide range of strongly correlated and topological phenomena. The physics in these materials is often sensitive to the interlayer stacking order. Polarization-resolved optical second harmonic generation (SHG) is the most used technique for stacking order characterization but unverified for most heterobilayers. Here we calibrate th… ▽ More Transition metal dichalcogenide (TMD) moiré bilayers have realized a wide range of strongly correlated and topological phenomena. The physics in these materials is often sensitive to the interlayer stacking order. Polarization-resolved optical second harmonic generation (SHG) is the most used technique for stacking order characterization but unverified for most heterobilayers. Here we calibrate the optical SHG for angle-aligned MoTe2/WSe2 bilayers by the scanning transmission electron microscopy (STEM). We directly compare the transport and magnetic properties and the electronic phase diagram for two distinct stacking orders. With the calibrated stacking order assignment, we clarify the interpretation of earlier results, including the nature of the Chern insulator, mechanism of an electric-field-tuned metal-insulator transition at half band filling, and the Kondo lattice physics. Our work provides a consistent picture of the relation between the stacking order and the electronic properties of MoTe2/WSe2 moiré bilayers. △ Less

Submitted 20 May, 2026; originally announced May 2026.

Anomalous Thermal Transport Reveals Weak First-Order Melting of Charge Density Waves in 2H-TaSe2

Authors: Han Huang, Jinghang Dai, Joyce Christiansen-Salameh, Jiyoung Kim, Samuel Kielar, Desheng Ma, Noah Schinitzer, Danrui Ni, Gustavo Alvarez, Chen Li, Carla Slebodnick, Mario Medina, Bilal Azhar, Ahmet Alatas, Robert Cava, David Muller, Zhiting Tian

Abstract: How ordered phases melt in low-dimensional quantum materials remain difficult to resolve because the relevant fluctuations are dynamic and charge neutral. In this work, we show that thermal transport provides a sensitive probe of these hidden fluctuations in the layered transition metal dichalcogenide 2H-TaSe2. We observe a striking V-shaped temperature dependence of the thermal conductivity that… ▽ More How ordered phases melt in low-dimensional quantum materials remain difficult to resolve because the relevant fluctuations are dynamic and charge neutral. In this work, we show that thermal transport provides a sensitive probe of these hidden fluctuations in the layered transition metal dichalcogenide 2H-TaSe2. We observe a striking V-shaped temperature dependence of the thermal conductivity that cannot be explained by conventional phonon-phonon scattering. Instead, it originates from scattering by persistent local charge-density-wave (CDW) correlations, consistent with our phenomenological model linking thermal transport to spatial CDW fluctuation. Electron diffraction reveals short-range periodic lattice distortions persisting to at least 300 K, while X-ray diffraction shows thermal hysteresis of the CDW wavevector. Together, these results reveal a dislocation- and fluctuation-driven weak first-order melting of the CDW state. △ Less

Submitted 19 April, 2026; v1 submitted 16 March, 2026; originally announced March 2026.

Comments: 21 pages, 5 figures

A superconducting half-dome in bilayer nickelates

Authors: Yidi Liu, Bai Yang Wang, Jiarui Li, Yaoju Tarn, Lopa Bhatt, Michael Colletta, Yi-Ming Wu, Cheng-Tai Kuo, Jun-Sik Lee, Berit H. Goodge, David A. Muller, Zhi-Xun Shen, Srinivas Raghu, Harold Y. Hwang, Yijun Yu

Abstract: Understanding how superconductivity emerges and collapses in correlated electron systems remains a central challenge in condensed matter physics. As a recently discovered member of the high temperature superconductor family, bilayer nickelates provide a new opportunity for examining this problem. Their pronounced sensitivity to oxygen stoichiometry, while posing challenges for stabilizing supercon… ▽ More Understanding how superconductivity emerges and collapses in correlated electron systems remains a central challenge in condensed matter physics. As a recently discovered member of the high temperature superconductor family, bilayer nickelates provide a new opportunity for examining this problem. Their pronounced sensitivity to oxygen stoichiometry, while posing challenges for stabilizing superconductivity, simultaneously offers an effective control parameter for tuning electronic phases. Here we report a superconducting half-dome in compressively strained bilayer nickelate thin films as a function of continuous tuning of oxygen stoichiometry. Starting from an optimally superconducting state, increasing oxygen stoichiometry gradually suppresses superconductivity toward a metallic phase, whereas decreasing oxygen stoichiometry drives a granular superconductor-to-insulator transition while leaving the superconducting onset intact. This half-dome structure can be understood to arise from the contrasting roles played by interstitial oxygen versus oxygen vacancies - namely the dominance of doping versus scattering. Notably, the half-dome emerges consistently across samples with different rare-earth combinations, with or without alkaline-earth doping, revealing a general feature of the bilayer nickelate phase diagram. △ Less

Submitted 12 March, 2026; originally announced March 2026.

Comments: 22 pages, 5 figures

Designing heterostructures to control oxygen stoichiometry in helimagnetic perovskite strontium ferrite

Authors: Jennifer Fowlie, Bernat Mundet, Danilo Puggioni, Lopa Bhatt, Eric R. Hoglund, Woo Jin Kim, Jiarui Li, Sang Jun Lee, Wenchi Liu, Antoine Devincenti, James M. Rondinelli, David A. Muller, Harold Y. Hwang

Abstract: A large challenge in determining the physics of helimagnetic SrFeO3 is in stabilizing the stoichiometric chemical phase over long enough time scales to conduct extensive measurements. Degradation in SrFeO3 manifests mainly as a crossover from metallic to insulating behavior. Using a combination of electronic transport and density functional theory, we show that this degradation is dominated by oxy… ▽ More A large challenge in determining the physics of helimagnetic SrFeO3 is in stabilizing the stoichiometric chemical phase over long enough time scales to conduct extensive measurements. Degradation in SrFeO3 manifests mainly as a crossover from metallic to insulating behavior. Using a combination of electronic transport and density functional theory, we show that this degradation is dominated by oxygen loss, possibly on the order of one percent. We further demonstrate that high quality SrFeO3 thin films can be stabilized long-term by combining a nanoscale band insulator capping layer with an ex situ ozone anneal. We show that this produces a nearly-pristine cation sublattice and preserves metallicity for at least several weeks. These results establish a reliable pathway for producing chemically stable SrFeO3 thin films, enabling reproducible studies of its unusual helimagnetism. △ Less

Submitted 24 February, 2026; originally announced February 2026.

Superconducting phase diagram of multi-layer square-planar nickelates

Authors: Grace A. Pan, Dan Ferenc Segedin, Sophia F. R. TenHuisen, Lopa Bhatt, Harrison LaBollita, Abigail Y. Jiang, Qi Song, Ari B. Turkiewicz, Denitsa R. Baykusheva, Abhishek Nag, Stefano Agrestini, Ke-Jin Zhou, Jonathan Pelliciari, Valentina Bisogni, Hua Zhou, Mark P. M. Dean, Hanjong Paik, David A. Muller, Lena F. Kourkoutis, Charles M. Brooks, Matteo Mitrano, Antia S. Botana, Berit H. Goodge, Julia A. Mundy

Abstract: The discovery of superconductivity in square-planar nickelates has offered a rich materials platform to explore the origins of cuprate-like superconductivity. Experimental investigations however have largely been limited to the infinite-layer $R$NiO$_2$ ($R$=rare-earth) nickelates. Here, we construct a phase diagram of multi-layer square-planar Nd$_{n+1}$Ni$_n$O$_{2n+2}$ compounds and discover sig… ▽ More The discovery of superconductivity in square-planar nickelates has offered a rich materials platform to explore the origins of cuprate-like superconductivity. Experimental investigations however have largely been limited to the infinite-layer $R$NiO$_2$ ($R$=rare-earth) nickelates. Here, we construct a phase diagram of multi-layer square-planar Nd$_{n+1}$Ni$_n$O$_{2n+2}$ compounds and discover signatures of superconductivity for $n$ = 4 - 8. Upon decreasing the dimensionality $n$, the superconducting anisotropy evolves due to 4$f$ electron effects, and electronic structure characteristics approach cuprate-like behavior. Magnetic fluctuations persist from within the superconducting regime and into the over-doped, non-superconducting regime. Remarkably, the superconducting regime overlaps with that of chemically-doped infinite-layer nickelates, demonstrating underlying commonalities and distinct differences across varying structural realizations of square-planar nickelates. Our work establishes this layered template for creating new nickel-based superconductors. △ Less

Submitted 22 February, 2026; originally announced February 2026.

Comments: 13 pages, 5 figures

Journal ref: Science 392 (2026)

Krypton-sputtered tantalum films for scalable high-performance quantum devices

Authors: Maciej W. Olszewski, Lingda Kong, Simon Reinhardt, Daniel Tong, Xinyi Du, Gabriele Di Gianluca, Haoran Lu, Saswata Roy, Luojia Zhang, Aleksandra B. Biedron, David A. Muller, Valla Fatemi

Abstract: Superconducting qubits based on tantalum (Ta) thin films have demonstrated the highest-performing microwave resonators and qubits. This makes Ta an attractive material for superconducting quantum computing applications, but, so far, direct deposition has largely relied on high substrate temperatures exceeding \SI{400}{\celsius} to achieve the body-centered cubic phase, BCC (\textalpha-Ta). This le… ▽ More Superconducting qubits based on tantalum (Ta) thin films have demonstrated the highest-performing microwave resonators and qubits. This makes Ta an attractive material for superconducting quantum computing applications, but, so far, direct deposition has largely relied on high substrate temperatures exceeding \SI{400}{\celsius} to achieve the body-centered cubic phase, BCC (\textalpha-Ta). This leads to compatibility issues for scalable fabrication leveraging standard semiconductor fabrication lines. Here, we show that changing the sputter gas from argon (Ar) to krypton (Kr) promotes BCC Ta synthesis on silicon (Si) at temperatures as low as \SI{200}{\celsius}, providing a wide process window compatible with back-end-of-the-line fabrication standards. Furthermore, we find these films to have substantially higher electronic conductivity, consistent with clean-limit superconductivity. We validated the microwave performance through coplanar waveguide resonator measurements, finding that films deposited at \SI{250}{\celsius} and \SI{350}{\celsius} exhibit a tight performance distribution at the state of the art. Higher temperature-grown films exhibit higher losses, in correlation with the degree of Ta/Si intermixing revealed by cross-sectional transmission electron microscopy. Finally, with these films, we demonstrate transmon qubits with a relatively compact, \SI{20}{\micro\meter} capacitor gap, achieving a median quality factor up to 14 million. △ Less

Submitted 27 January, 2026; originally announced January 2026.

Above Room Temperature Ferroelectricity in Epitaxially Strained KTaO3

Authors: Tobias Schwaigert, Salva Salmani-Rezaie, Sankalpa Hazra, Utkarsh Saha, Maya Ramesh, Aiden Ross, Betul Pamuk, Long-Qing Chen, David A. Muller, Darrell G. Schlom, Venkatraman Gopalan, Kaveh Ahadi

Abstract: Epitaxial strain is a powerful means to engineer emergent phenomena in thin films and heterostructures. Here, we demonstrate that KTaO3, a cubic perovskite in bulk form, can be epitaxially strained into a highly tunable ferroelectric. KTaO3 films grown commensurate to SrTiO3 (001) substrates experience an in-plane strain of -2.1 % that transforms the cubic structure into a tetragonal polar phase w… ▽ More Epitaxial strain is a powerful means to engineer emergent phenomena in thin films and heterostructures. Here, we demonstrate that KTaO3, a cubic perovskite in bulk form, can be epitaxially strained into a highly tunable ferroelectric. KTaO3 films grown commensurate to SrTiO3 (001) substrates experience an in-plane strain of -2.1 % that transforms the cubic structure into a tetragonal polar phase with transition temperature of 475 K, consistent with our thermodynamic calculations. We show that the Curie temperature and the spontaneous electric polarization can be system- atically controlled with epitaxial strain. Scanning transmission electron microscopy reveals cooperative polar displacements of the potassium columns with respect to the neighboring tantalum columns at room temperature. Optical second-harmonic generation results are described by a tetragonal polar point group (4mm), indicating the emergence of a global polar ground state. We observe a ferroelectric hysteresis response, using metal-insulator-metal capacitor test structures. The results demon- strate a robust intrinsic ferroelectric state in epitaxially strained KTaO3 thin films. △ Less

Submitted 22 January, 2026; v1 submitted 20 January, 2026; originally announced January 2026.

Synthesis of epitaxial TaO$_2$ thin films on Al$_2$O$_3$ by suboxide molecular-beam epitaxy and thermal laser epitaxy

Authors: Yorick A. Birkhölzer, Anna S. Park, Noah Schnitzer, Jeffrey Z. Kaaret, Benjamin Z. Gregory, Tomas A. Kraay, Tobias Schwaigert, Matthew R. Barone, Brendan D. Faeth, Felix V. E. Hensling, Iris C. G. van den Bosch, Ellen M. Kiens, Christoph Baeumer, Enrico Bergamasco, Markus Grüninger, Alexander Bordovalos, Suresh Chaulagain, Nikolas J. Podraza, Waldemar Tokarz, Wojciech Tabis, Matthew J. Wahila, Suchismita Sarker, Christopher J. Pollock, Shun-Li Shang, Zi-Kui Liu , et al. (6 additional authors not shown)

Abstract: Tantalum dioxide (TaO2) is a metastable tantalum compound. Here, we report the epitaxial stabilization of TaO2 on Al2O3 (1-102) (r-plane sapphire) substrates using suboxide molecular-beam epitaxy (MBE) and thermal laser epitaxy (TLE), demonstrating single-oriented, monodomain growth of anisotropically strained thin films. Microstructural investigation is performed using synchrotron X-ray diffracti… ▽ More Tantalum dioxide (TaO2) is a metastable tantalum compound. Here, we report the epitaxial stabilization of TaO2 on Al2O3 (1-102) (r-plane sapphire) substrates using suboxide molecular-beam epitaxy (MBE) and thermal laser epitaxy (TLE), demonstrating single-oriented, monodomain growth of anisotropically strained thin films. Microstructural investigation is performed using synchrotron X-ray diffraction and scanning transmission electron microscopy. The tetravalent oxidation state of tantalum is confirmed using X-ray absorption and photoemission spectroscopy as well as electron energy-loss spectroscopy. Optical properties are investigated via spectroscopic ellipsometry and reveal a 0.3 eV Mott gap of the tantalum 5d electrons. Density-functional theory and group theoretical arguments are used to evaluate the limited stability of the rutile phase and reveal the potential to unlock a hidden metal-insulator transition concomitant with a structural phase transition to a distorted rutile phase, akin to NbO2. Our work expands the understanding of tantalum oxides and paves the way for their integration into next-generation electronic and photonic devices. △ Less

Submitted 12 May, 2026; v1 submitted 10 January, 2026; originally announced January 2026.

Comments: Revised manuscript

Effect of substrate miscut angle on critical thickness, structural and electronic properties of MBE-grown NbN films on c-plane sapphire

Authors: Anand Ithepalli, Saumya Vashishtha, Naomi Pieczulewski, Qiao Liu, Amit Rohan Rajapurohita, Matthew Barone, Darrell Schlom, David A. Muller, Huili Grace Xing, Debdeep Jena

Abstract: We report the structural and electronic properties of niobium nitride (NbN) thin films grown by molecular beam epitaxy on c-plane sapphire with miscut angles of $0.5^\text{o}$, $2^\text{o}$, $4^\text{o}$, and $10^\text{o}$ towards m-axis. X-ray diffraction (XRD) scans reveal that the full width at half maximum of the rocking curves around the 1 1 1 reflection of these NbN films decreases with incr… ▽ More We report the structural and electronic properties of niobium nitride (NbN) thin films grown by molecular beam epitaxy on c-plane sapphire with miscut angles of $0.5^\text{o}$, $2^\text{o}$, $4^\text{o}$, and $10^\text{o}$ towards m-axis. X-ray diffraction (XRD) scans reveal that the full width at half maximum of the rocking curves around the 1 1 1 reflection of these NbN films decreases with increasing miscut. Starting from 76 arcsecs on $0.5^\text{o}$ miscut, the FWHM reduces to almost 20 arcsecs on $10^\text{o}$ miscut sapphire indicating improved structural quality. Scanning transmission electron microscopy (STEM) images indicate that NbN on c-sapphire has around 10 nm critical thickness, irrespective of the substrate miscut, above which it turns columnar. The improved structural property is correlated with a marginal increment in superconducting transition temperature $T_\text{c}$ from 12.1 K for NbN on $0.5^\text{o}$ miscut sapphire to 12.5 K for NbN on $10^\text{o}$ miscut sapphire. △ Less

Submitted 17 November, 2025; originally announced November 2025.

Journal ref: Appl. Phys. Lett. 128, 042602 (2026)

Disorder-broadened topological Hall phase and anomalous Hall scaling in FeGe

Authors: Chaman Gupta, Chris Matsumura, Hongbin Yang, Sarah Edwards, Rebeca M. Gurrola, Jiun-Haw Chu, Hanjong Paik, Yongqiang Wang, David A. Muller, Robert Streubel, Tzu-Ming Lu, Serena Eley

Abstract: Magnetic skyrmions are topologically protected spin textures that are promising candidates for low-power spintronic memory and logic devices. Realizing skyrmion-based devices requires an understanding of how structural disorder affects their stability and transport properties. This study uses Ne$^{+}$ ion irradiation at fluences from $10^{11}$ to $10^{14}$ ions-cm$^{-2}$ to systematically vary def… ▽ More Magnetic skyrmions are topologically protected spin textures that are promising candidates for low-power spintronic memory and logic devices. Realizing skyrmion-based devices requires an understanding of how structural disorder affects their stability and transport properties. This study uses Ne$^{+}$ ion irradiation at fluences from $10^{11}$ to $10^{14}$ ions-cm$^{-2}$ to systematically vary defect densities in 80 nm epitaxial FeGe films and quantify the resulting modifications to magnetic phase boundaries and electronic scattering. Temperature- and field-dependent Hall measurements reveal that increasing disorder progressively extends the topological Hall signal from a narrow window near 200K in pristine films down to 4K at the highest fluence, with peak amplitude more than doubling. Simultaneously, the anomalous Hall effect transitions from quadratic Berry curvature scaling to linear skew scattering behavior, with the skew coefficient increasing threefold. These results establish quantitative correlations between defect concentration, skyrmion phase space, and transport mechanisms in a chiral magnet. It demonstrates that ion-beam modification provides systematic control over both topological texture stability and electrical detectability. △ Less

Submitted 7 November, 2025; originally announced November 2025.

Comments: 20 pages, 5 figures

Mind the Gap -- Imaging Buried Interfaces in Twisted Oxide Moirés

Authors: Harikrishnan KP, Xin Wei, Chia-Hao Lee, Dasol Yoon, Yonghun Lee, Kevin J. Crust, Yu-Tsun Shao, Ruijuan Xu, Jong-Hoon Kang, Ce Liang, Jiwoong Park, Harold Y. Hwang, David A. Muller

Abstract: The ability to tune electronic structure in twisted stacks of two-dimensional (2D) materials has motivated the exploration of similar moiré physics with twisted oxide membranes. Due to the intrinsic three-dimensional nature of bonding in many oxides, achieving atomic-level coupling is significantly more challenging than with van der Waals materials. Although clean interfaces with atomic-level prox… ▽ More The ability to tune electronic structure in twisted stacks of two-dimensional (2D) materials has motivated the exploration of similar moiré physics with twisted oxide membranes. Due to the intrinsic three-dimensional nature of bonding in many oxides, achieving atomic-level coupling is significantly more challenging than with van der Waals materials. Although clean interfaces with atomic-level proximity have been demonstrated in ceramic bicrystals using high-temperature and high-pressure processing to facilitate atomic diffusion that flattens rough interfaces, such conditions are not readily accessible when bonding oxide membranes. This study shows how topographic mismatch due to surface roughness of the membranes can restrict atomic-scale proximity at the interface to isolated patches even after contaminants and amorphous interlayers are eliminated. In interfaces between 2D materials and oxide membranes the reduced ability of the 2D material to conform to the membrane's step-terrace topography also limits atomic-scale contact. When imaging stacked membranes in projection, we find conventional through-focal imaging to be relatively insensitive to the buried interface, whereas electron ptychography detects structural variations on the order of a nanometer. These findings highlight interface roughness as a key challenge for the field of oxide twistronics and emphasize the need for reliable characterization methods, both in cross-section and projection. △ Less

Submitted 23 January, 2026; v1 submitted 27 October, 2025; originally announced October 2025.

Comments: 40 pages, 7 figures, 20 supplementary figures

Active-Learning Inspired $\textit{Ab Initio}$ Theory-Experiment Loop Approach for Management of Material Defects: Application to Superconducting Qubits

Authors: Sarvesh Chaudhari, Cristóbal Méndez, Rushil Choudhary, Tathagata Banerjee, Maciej W. Olszewski, Jadrien T. Paustian, Jaehong Choi, Zhaslan Baraissov, Raul Hernandez, David A. Muller, B. L. T. Plourde, Gregory D. Fuchs, Valla Fatemi, Tomás A. Arias

Abstract: Surface oxides are associated with two-level systems (TLSs) that degrade the performance of niobium-based superconducting quantum computing devices. To address this, we introduce a predictive framework for selecting metal capping layers that inhibit niobium oxide formation. Using DFT-calculated oxygen interstitial and vacancy energies as thermodynamic descriptors, we train a logistic regression mo… ▽ More Surface oxides are associated with two-level systems (TLSs) that degrade the performance of niobium-based superconducting quantum computing devices. To address this, we introduce a predictive framework for selecting metal capping layers that inhibit niobium oxide formation. Using DFT-calculated oxygen interstitial and vacancy energies as thermodynamic descriptors, we train a logistic regression model on a limited set of experimental outcomes to successfully predict the likelihood of oxide formation beneath different capping materials. This approach identifies Zr, Hf, and Ta as effective diffusion barriers. Our analysis further reveals that the oxide formation energy per oxygen atom serves as an excellent standalone descriptor for predicting barrier performance. By combining this new descriptor with lattice mismatch as a secondary criterion to promote structurally coherent interfaces, we identify Zr, Ta, and Sc as especially promising candidates. This closed-loop strategy integrates first-principles theory, machine learning, and limited experimental data to enable rational design of next-generation materials. △ Less

Submitted 25 February, 2026; v1 submitted 2 October, 2025; originally announced October 2025.

Comments: 8 pages, 7 figures (8 images), Supplemental Information pdf included

Using Aberrations to Improve Dose-Efficient Tilt-corrected 4D-STEM Imaging

Authors: Desheng Ma, David A Muller, Steven E Zeltmann

Abstract: Tilt-corrected imaging methods in four-dimensional scanning transmission electron microscopy (4D-STEM) have recently emerged as a new class of direct ptychography methods that are especially useful at low dose. The operation of tilt correction unfolds the contrast transfer functions (CTF) of the virtual bright-field images and retains coherence by correcting defocus-induced spatial shifts. By perf… ▽ More Tilt-corrected imaging methods in four-dimensional scanning transmission electron microscopy (4D-STEM) have recently emerged as a new class of direct ptychography methods that are especially useful at low dose. The operation of tilt correction unfolds the contrast transfer functions (CTF) of the virtual bright-field images and retains coherence by correcting defocus-induced spatial shifts. By performing summation or subtraction of the tilt-corrected images, the real or imaginary parts of the complex phase-contrast transfer functions are recovered, producing a tilt-corrected bright field image (tcBF) or a differential phase contrast image (tcDPC). However, the CTF can be strongly damped by the introduction of higher-order aberrations than defocus. In this paper, we show how aberration-corrected bright-field imaging (acBF), which combines tcBF and tcDPC, enables continuously-nonzero contrast transfer within the information limit, even in the presence of higher-order aberrations. At Scherzer defocus in a spherically-aberration-limited system, the resultant phase shift from the probe-forming lens acts as a phase plate, removing oscillations from the acBF CTF. We demonstrate acBF on both simulated and experimental data, showing it produces superior performance to tcBF or DPC methods alone, and discuss its limitations. △ Less

Submitted 1 October, 2025; originally announced October 2025.

Comments: 22 pages, 13 figures

Melting point depression of charge density wave in 1T-TiSe$_2$ due to size effects

Authors: Saif Siddique, Mehrdad T. Kiani, Omri Lesser, Stephen D. Funni, Nishkarsh Agarwal, Maya Gates, Miti Shah, William Millsaps, Suk Hyun Sung, Noah Schnitzer, Lopa Bhatt, David A. Muller, Robert Hovden, Ismail El Baggari, Eun-Ah Kim, Judy J. Cha

Abstract: Classical nucleation theory predicts size-dependent nucleation and melting due to surface and confinement effects at the nanoscale. In correlated electronic states, observation of size-dependent nucleation and melting is rarely reported, likely due to the extremely small length scales necessary to observe such effects for electronic states. Here, using 1T-TiSe$_2$ nanoflakes as a prototypical two-… ▽ More Classical nucleation theory predicts size-dependent nucleation and melting due to surface and confinement effects at the nanoscale. In correlated electronic states, observation of size-dependent nucleation and melting is rarely reported, likely due to the extremely small length scales necessary to observe such effects for electronic states. Here, using 1T-TiSe$_2$ nanoflakes as a prototypical two-dimensional (2D) charge density wave (CDW) system, we perform in-situ cryogenic electron microscopy with temperature down to 20 K and observe size-dependent nucleation and melting of CDWs. Specifically, we observe a melting point depression of CDW for 1T-TiSe$_2$ flakes with lateral sizes less than 100 nm. By fitting experimental data to a Ginzburg-Landau model, we estimate a zero-temperature correlation length of 10--50 nm, which matches the reported CDW domain size for 1T-TiSe$_2$. As the flake size approaches the correlation length, the divergence of the CDW correlation length near the transition is cut off by the finite flake size, limiting long-range order and thereby lowering the transition temperature. For very small flakes whose size is close to the correlation length, we also observe absence of CDWs, as predicted by the model. We thus show that an electronic phase transition follows classical nucleation theory. △ Less

Submitted 20 September, 2025; originally announced September 2025.

Journal ref: Phys. Rev. B 113, 224106 (2026)

Detective quantum efficiency based comparison of HRTEM and ptychography phase imaging

Authors: Felix Bennemann, Angus I. Kirkland, David A. Muller, Peter Nellist

Abstract: High-resolution transmission electron microscopy (HRTEM) is an important method for imaging beam sensitive materials often under cryo conditions. Electron ptychography in the scanning transmission electron microscope (STEM) has been shown to reconstruct low-noise phase data at a reduced fluence for such materials. This raises the question of whether ptychography or HRTEM provides a more fluence-ef… ▽ More High-resolution transmission electron microscopy (HRTEM) is an important method for imaging beam sensitive materials often under cryo conditions. Electron ptychography in the scanning transmission electron microscope (STEM) has been shown to reconstruct low-noise phase data at a reduced fluence for such materials. This raises the question of whether ptychography or HRTEM provides a more fluence-efficient imaging technique. Even though the transfer function is a common metric for evaluating the performance of an imaging method, it only describes the signal transfer with respect to spatial frequency, irrespective of the noise transfer. It can also not be well defined for methods, such as ptychography, that use an algorithm to form the final image. Here we apply the concept of detective quantum efficiency (DQE) to electron microscopy as a fluence independent and sample independent measure of technique performance. We find that, for a weak-phase object, ptychography can never reach the efficiency of a perfect Zernike phase imaging microscope but that ptychography is more robust to partial coherence. △ Less

Submitted 18 September, 2025; v1 submitted 15 September, 2025; originally announced September 2025.

Cepstral Strain Mapping for Small Pixel-Count Detectors

Authors: Harikrishnan KP, Dasol Yoon, Yu-Tsun Shao, Zhaslan Baraissov, Luigi Mele, Christoph Mitterbauer, Erik Kieft, Stefano Vespucci, David A. Muller

Abstract: With the decreasing sizes of integrated-circuit components, the semiconductor industry is in growing need of high-throughput strain mapping techniques that offer high precision and spatial resolution, with desired industry goals of 0.01-0.1% and 1 nm respectively. As the fundamental limitation on the measurement precision is set by the Poisson noise, pixel array detectors with high saturation curr… ▽ More With the decreasing sizes of integrated-circuit components, the semiconductor industry is in growing need of high-throughput strain mapping techniques that offer high precision and spatial resolution, with desired industry goals of 0.01-0.1% and 1 nm respectively. As the fundamental limitation on the measurement precision is set by the Poisson noise, pixel array detectors with high saturation current, high dynamic range and fast readout are ideally suited for this purpose. However, due to the limited pixel count on these detectors, they do not work well with traditional strain mapping algorithms that were optimized to work on datasets with a large pixel count. Here, we evaluate the cepstral transform that was designed to address this problem, with the precision determined by the convergence, collection angles and dose while remaining insensitive to the pixel count. We test the performance of our method on silicon wedges and Si-SiGe multilayers, and using datasets collected at different conditions, we show how the measured strain precision scales as a function of dose, aperture size and sample thickness. Using precession gives a further improvement in precision by about 1.5-2x, whereas energy filtering does not have a significant impact on the cepstral method for device-relevant sample thickness ranges. △ Less

Submitted 10 September, 2025; originally announced September 2025.

Comments: 34 Pages, 7 Figures, 5 Supplementary Figures, 2 Supplementary Texts

Low barrier ZrO$_x$-based Josephson junctions

Authors: Jaehong Choi, Maciej Olszewski, Luojia Zhang, Zhaslan Baraissov, Tathagata Banerjee, Kushagra Aggarwal, Sarvesh Chaudhari, Tomás A. Arias, David A. Muller, Valla Fatemi, Gregory D. Fuchs

Abstract: The Josephson junction is a crucial element in superconducting devices, and niobium is a promising candidate for the superconducting material due to its large energy gap relative to aluminum. AlO$_x$ has long been regarded as the highest quality oxide tunnel barrier and is often used in niobium-based junctions. Here we propose ZrO$_x$ as an alternative tunnel barrier material for Nb electrodes. We… ▽ More The Josephson junction is a crucial element in superconducting devices, and niobium is a promising candidate for the superconducting material due to its large energy gap relative to aluminum. AlO$_x$ has long been regarded as the highest quality oxide tunnel barrier and is often used in niobium-based junctions. Here we propose ZrO$_x$ as an alternative tunnel barrier material for Nb electrodes. We theoretically estimate that zirconium oxide has excellent oxygen retention properties and experimentally verify that there is no significant oxygen diffusion leading to NbO$_x$ formation in the adjacent Nb electrode. We develop a top-down, subtractive fabrication process for Nb/Zr-ZrO$_x$/Nb Josephson junctions, which enables scalability and large-scale production of superconducting electronics. Using cross sectional scanning transmission electron microscopy, we experimentally find that depending on the Zr thickness, ZrO$_x$ tunnel barriers can be fully crystalline with chemically abrupt interfaces with niobium. Further analysis using electron energy loss spectroscopy reveals that ZrO$_x$ corresponds to tetragonal ZrO$_2$. Room temperature characterization of fabricated junctions using Simmons' model shows that ZrO$_2$ exhibits a low tunnel barrier height, which is promising in merged-element transmon applications. Low temperature transport measurements reveal sub-gap structure, while the low-voltage sub-gap resistance remains in the megaohm range. △ Less

Submitted 15 August, 2025; originally announced August 2025.

Comments: 32 pages in manuscript format

Journal ref: APL Mater. 13, 111103 (2025)

Electron Ptychography Images Hydrogen Atom Superlattices and 3D Inhomogeneities in Palladium Hydride Nanoparticles

Authors: Zixiao Shi, Qihao Li, Himani Mishra, Desheng Ma, Héctor D. Abruña, David A. Muller

Abstract: When hydrogen atoms occupy interstitial sites in metal lattices, they form metal hydrides (MHx), whose structural and electronic properties can differ significantly from the host metals. Owing to the small size of hydrogen atom and its unique interactions with the host metal, MHx is of broad interest in both fundamental science and technological applications. Determining where the hydrogen is loca… ▽ More When hydrogen atoms occupy interstitial sites in metal lattices, they form metal hydrides (MHx), whose structural and electronic properties can differ significantly from the host metals. Owing to the small size of hydrogen atom and its unique interactions with the host metal, MHx is of broad interest in both fundamental science and technological applications. Determining where the hydrogen is located within the MHx, and whether it orders on the partially occupied interstitial sites is crucial for predicting and understanding the resultant physical and electronic properties of the hydride. Directly imaging hydrogen within a host material remains a major challenge due to its weak interaction with X-rays and electrons in conventional imaging techniques. Here, we employ electron ptychography, a scanning transmission electron microscopy technique, to image the three-dimensional (3D) distribution of H atoms in Palladium hydrides (PdHx) nanocubes, one of the most studied and industrially relevant MHx materials. We observe an unexpected one-dimensional superlattice ordering of hydrogen within the PdHx nanocubes and 3D hydrogen clustering in localized regions within PdHx nanocubes, revealing spatial heterogeneity in metal hydride nanoparticles previously inaccessible by other methods. △ Less

Submitted 14 August, 2025; originally announced August 2025.

Comments: 5 figures, 19 SI figures

Information in 4D-STEM: Where it is, and How to Use it

Authors: Desheng Ma, Guanxing Li, David A Muller, Steven E Zeltmann

Abstract: Contrast transfer mechanisms for electron scattering have been extensively studied in transmission electron microscopy. Here we revisit H. Rose's generalized contrast formalism from scattering theory to understand where information is encoded in four-dimensional scanning transmission electron microscopy (4D-STEM) data, and consequently identify new imaging modes that can also serve as crude but fa… ▽ More Contrast transfer mechanisms for electron scattering have been extensively studied in transmission electron microscopy. Here we revisit H. Rose's generalized contrast formalism from scattering theory to understand where information is encoded in four-dimensional scanning transmission electron microscopy (4D-STEM) data, and consequently identify new imaging modes that can also serve as crude but fast approximations to ptychography. We show that tilt correction and summation of the symmetric and antisymmetric scattering components within the bright-field disk -- corresponding to tilt-corrected bright field (tcBF) and tilt-corrected differential phase contrast (tcDPC) respectively -- enables aberration-corrected, bright-field phase contrast imaging (acBF) that makes maximal use of the 4D-STEM information under the weak phase object approximation (WPOA). Beyond the WPOA, we identify the contrast transfer from the interference between inelastic/plural scattering electrons, which show up as quadratic terms, and show that under overfocus conditions, contrast can be further enhanced at selected frequencies, similar to phase-contrast TEM imaging. There is also usable information encoded in the dark field region which we demonstrate by constructing a tilt-corrected dark-field image (tcDF) that sums up the incoherent scattering components and holds promise for depth sectioning of strong scatterers. This framework generalizes phase contrast theory in conventional/scanning transmission electron microscopy to 4D-STEM and provides analytical models and insights into full-field iterative ptychography, which blindly exploits all above contrast mechanisms. △ Less

Submitted 25 October, 2025; v1 submitted 28 July, 2025; originally announced July 2025.

Comments: 45 pages, 10 figures; corrected typos; submitted to Ultramicroscopy

Improving Multislice Electron Ptychography with a Generative Prior

Authors: Christian K. Belardi, Chia-Hao Lee, Yingheng Wang, Justin Lovelace, Kilian Q. Weinberger, David A. Muller, Carla P. Gomes

Abstract: Multislice electron ptychography (MEP) is an inverse imaging technique that computationally reconstructs the highest-resolution images of atomic crystal structures from diffraction patterns. Available algorithms often solve this inverse problem iteratively but are both time consuming and produce suboptimal solutions due to their ill-posed nature. We develop MEP-Diffusion, a diffusion model trained… ▽ More Multislice electron ptychography (MEP) is an inverse imaging technique that computationally reconstructs the highest-resolution images of atomic crystal structures from diffraction patterns. Available algorithms often solve this inverse problem iteratively but are both time consuming and produce suboptimal solutions due to their ill-posed nature. We develop MEP-Diffusion, a diffusion model trained on a large database of crystal structures specifically for MEP to augment existing iterative solvers. MEP-Diffusion is easily integrated as a generative prior into existing reconstruction methods via Diffusion Posterior Sampling (DPS). We find that this hybrid approach greatly enhances the quality of the reconstructed 3D volumes, achieving a 90.50% improvement in SSIM over existing methods. △ Less

Submitted 24 July, 2025; v1 submitted 23 July, 2025; originally announced July 2025.

Comments: 16 pages, 10 figures, 5 tables

3D Atomic-Scale Metrology of Strain Relaxation and Roughness in Gate-All-Around (GAA) Transistors via Electron Ptychography

Authors: Shake Karapetyan, Steven E. Zeltmann, Glen Wilk, Ta-Kun Chen, Vincent D. -H. Hou, David A. Muller

Abstract: To improve transistor density and electronic performance, next-generation semiconductor devices are adopting three-dimensional architectures and feature sizes down to the few-nm regime, which require atomic-scale metrology to identify and resolve performance-limiting fabrication challenges. X-ray methods deliver three-dimensional imaging of integrated circuits but lack the spatial resolution to ch… ▽ More To improve transistor density and electronic performance, next-generation semiconductor devices are adopting three-dimensional architectures and feature sizes down to the few-nm regime, which require atomic-scale metrology to identify and resolve performance-limiting fabrication challenges. X-ray methods deliver three-dimensional imaging of integrated circuits but lack the spatial resolution to characterize atomic-scale features, while conventional electron microscopy offers atomic-scale imaging but limited depth information. We demonstrate how multislice electron ptychography (MEP), a computational electron microscopy technique with sub-Ångström lateral and nanometer-scale depth resolution, enables 3D imaging of buried features in devices. By performing MEP on prototype gate-all-around transistors we uncover and quantify distortions and defects at the interface of the 3D gate oxide wrapped around the channel. We find that the silicon in the 5-nm-thick channel gradually relaxes away from the interfaces, leaving only 60% of the atoms in a bulk-like structure. Quantifying the interface roughness, which was not previously possible for such small 3D structures but strongly impacts carrier mobility, we find that the top and bottom interfaces show different atomic-scale roughness profiles, reflecting their different processing conditions. By measuring 3D interface roughness simultaneously with strain relaxation and atomic-scale defects, from a single MEP dataset, we provide direct experimental values of these performance-limiting parameters needed for modeling and early fabrication optimization. △ Less

Submitted 9 July, 2025; originally announced July 2025.

Comments: 43 pages, 14 figures

Unconventional superlattice ordering in intercalated transition metal dichalcogenide V$_{1/3}$NbS$_2$

Authors: Shannon S. Fender, Noah Schnitzer, Wuzhang Fang, Lopa Bhatt, Dingbin Huang, Amani Malik, Oscar Gonzalez, Veronika Sunko, Lilia S. Xie, David A. Muller, Joseph Orenstein, Yuan Ping, Berit H. Goodge, D. Kwabena Bediako

Abstract: The interplay between symmetry and topology in magnetic materials makes it possible to engineer exotic phases and technologically useful properties. A key requirement for these pursuits is achieving control over local crystallographic and magnetic structure, usually through sample morphology (such as synthesis of bulk crystals versus thin-films) and application of magnetic or electric fields. Here… ▽ More The interplay between symmetry and topology in magnetic materials makes it possible to engineer exotic phases and technologically useful properties. A key requirement for these pursuits is achieving control over local crystallographic and magnetic structure, usually through sample morphology (such as synthesis of bulk crystals versus thin-films) and application of magnetic or electric fields. Here we show that V$_{1/3}$NbS$_2$ can be crystallized in two ordered superlattices, distinguished by the periodicity of out-of-plane magnetic intercalants. Whereas one of these structures is metallic and displays the hallmarks of altermagnetism, the other superlattice, which has not been isolated before in this family of intercalation compounds, is a semimetallic noncollinear antiferromagnet that may enable access to topologically nontrivial properties. This observation of an unconventional superlattice structure establishes a powerful route for tailoring the tremendous array of magnetic and electronic behaviors hosted in related materials. △ Less

Submitted 27 June, 2025; originally announced June 2025.

Comments: 7 pages, 4 figures

XHEMTs on Ultrawide Bandgap Single-Crystal AlN Substrates

Authors: Eungkyun Kim, Yu-Hsin Chen, Naomi Pieczulewski, Jimy Encomendero, David Anthony Muller, Debdeep Jena, Huili Grace Xing

Abstract: AlN has the largest bandgap in the wurtzite III-nitride semiconductor family, making it an ideal barrier for a thin GaN channel to achieve strong carrier confinement in field-effect transistors, analogous to silicon-on-insulator technology. Unlike SiO$_2$/Si/SiO$_2$, AlN/GaN/AlN can be grown fully epitaxially, enabling high carrier mobilities suitable for high-frequency applications. However, deve… ▽ More AlN has the largest bandgap in the wurtzite III-nitride semiconductor family, making it an ideal barrier for a thin GaN channel to achieve strong carrier confinement in field-effect transistors, analogous to silicon-on-insulator technology. Unlike SiO$_2$/Si/SiO$_2$, AlN/GaN/AlN can be grown fully epitaxially, enabling high carrier mobilities suitable for high-frequency applications. However, developing these heterostructures and related devices has been hindered by challenges in strain management, polarization effects, defect control and charge trapping. Here, the AlN single-crystal high electron mobility transistor (XHEMT) is introduced, a new nitride transistor technology designed to address these issues. The XHEMT structure features a pseudomorphic GaN channel sandwiched between AlN layers, grown on single-crystal AlN substrates. First-generation XHEMTs demonstrate RF performance on par with the state-of-the-art GaN HEMTs, achieving 5.92 W/mm output power and 65% peak power-added efficiency at 10 GHz under 17 V drain bias. These devices overcome several limitations present in conventional GaN HEMTs, which are grown on lattice-mismatched foreign substrates that introduce undesirable dislocations and exacerbated thermal resistance. With the recent availability of 100-mm AlN substrates and AlN's high thermal conductivity (340 W/m$\cdot$K), XHEMTs show strong potential for next-generation RF electronics. △ Less

Submitted 19 June, 2025; originally announced June 2025.

PtyRAD: A High-performance and Flexible Ptychographic Reconstruction Framework with Automatic Differentiation

Authors: Chia-Hao Lee, Steven E. Zeltmann, Dasol Yoon, Desheng Ma, David A. Muller

Abstract: Electron ptychography has recently achieved unprecedented resolution, offering valuable insights across diverse material systems, including in three dimensions. However, high-quality ptychographic reconstruction is computationally expensive and time consuming, requiring a significant amount of manually tuning even for experts. Additionally, essential tools for ptychographic analysis are often scat… ▽ More Electron ptychography has recently achieved unprecedented resolution, offering valuable insights across diverse material systems, including in three dimensions. However, high-quality ptychographic reconstruction is computationally expensive and time consuming, requiring a significant amount of manually tuning even for experts. Additionally, essential tools for ptychographic analysis are often scattered across multiple software packages, with some advanced features available only in costly commercial software like MATLAB. To address these challenges, we introduce PtyRAD, an open-source software framework offers a comprehensive, flexible, and computationally efficient solution for electron ptychography. PtyRAD provides seamless optimization of multiple parameters--such as sample thickness, local tilts, probe positions, and mixed probe and object modes--using gradient-based methods with automatic differentiation (AD). By utilizing PyTorch's highly optimized tensor operations, PtyRAD achieves up to a 17x speedup in reconstruction time compared to existing packages without compromising image quality. In addition, we propose a real-space depth regularization, which avoids wrap-around artifacts and can be useful for twisted two-dimensional (2D) material datasets and vertical heterostructures. Moreover, PtyRAD integrates a Bayesian optimization workflow that streamlines hyperparameter selection. We hope the open-source nature of PtyRAD will foster reproducibility and community-driven development for future advances in ptychographic imaging. △ Less

Submitted 10 July, 2025; v1 submitted 12 May, 2025; originally announced May 2025.

Comments: 17 pages, 6 figures

Journal ref: Microscopy and Microanalysis, Volume 31, Issue 4, August 2025, ozaf070

Microscopic mechanisms of flexoelectricity in oxide membranes

Authors: Harikrishnan KP, Varun Harbola, Jaehong Choi, Kevin J. Crust, Yu-Tsun Shao, Chia-Hao Lee, Dasol Yoon, Yonghun Lee, Gregory D. Fuchs, Cyrus E. Dreyer, Harold Y. Hwang, David A. Muller

Abstract: Modern electromechanical actuators and sensors rely on the piezoelectric effect that linearly couples strain and electric polarization. However, this effect is restricted to materials that lack inversion symmetry. In contrast, the flexoelectric effect couples strain gradients to electric polarization, and is a universal property in insulating materials of arbitrary symmetry. Flexoelectricity becom… ▽ More Modern electromechanical actuators and sensors rely on the piezoelectric effect that linearly couples strain and electric polarization. However, this effect is restricted to materials that lack inversion symmetry. In contrast, the flexoelectric effect couples strain gradients to electric polarization, and is a universal property in insulating materials of arbitrary symmetry. Flexoelectricity becomes prominent at the nanoscale from the inverse scaling of strain gradients with material dimensions. Here, we measure the strain-gradient-induced structural distortions in strontium titanate using multislice electron ptychography. This technique enables reliable picometer-scale measurements of the dominant oxygen-titanium distortions, correcting for artifacts that limited conventional imaging methods. This enables us to directly measure the sign of the net ionic contribution to the flexoelectric polarization. Guided by the experimental measurements, first-principles calculations show how the sign and magnitude of the bulk contribution to the flexoelectric coefficient in strontium titanate can be switched by tuning the strain state. Hybridization between the optical soft phonon and acoustic phonon modes drives this transition, yielding a large response and a polarity switch across the resonance. This strain-dependence might explain the sign discrepancy and orders of magnitude variation in the values of previously reported flexoelectric coefficients for strontium titanate. As the strain state of curved membranes can be tuned, our approach also suggests an approach to engineer nanoscale flexoelectric polarization using strain as a control parameter. △ Less

Submitted 17 March, 2025; originally announced March 2025.

Comments: 51 pages, 4 figures, 13 Supplementary Figures

Superconductivity in tin telluride films grown by molecular beam epitaxy

Authors: Antonio Gonzalez, Samuel J. Poage, Bernardo Langa, Jr., Deepak Sapkota, Salva Salmani-Rezaie, Shalinee Chikara, Michael D. Williams, David A. Muller, Kasra Sardashti, Kaveh Ahadi

Abstract: The intersection of superconductivity and ferroelectricity hosts a wide range of exotic quantum phenomena. Here, we report on the observation of superconductivity in high-quality tin telluride films grown by molecular beam epitaxy. Unintentionally doped tin telluride undergoes a ferroelectric transition at ~100 K. The critical temperature of superconductivity increases monotonically with indium co… ▽ More The intersection of superconductivity and ferroelectricity hosts a wide range of exotic quantum phenomena. Here, we report on the observation of superconductivity in high-quality tin telluride films grown by molecular beam epitaxy. Unintentionally doped tin telluride undergoes a ferroelectric transition at ~100 K. The critical temperature of superconductivity increases monotonically with indium concentration. The critical field of superconductivity, however, does not follow the same behavior as critical temperature with indium concentration and exhibits a carrier-density-dependent violation of the Pauli limit. The electron-phonon coupling, from the McMillan formula, exhibits a systematic enhancement with indium concentration, suggesting a potential violation of BCS weak coupling at high indium concentrations. △ Less

Submitted 12 March, 2025; originally announced March 2025.

Improper Ferroelectricity at the Monolayer Limit

Authors: Yilin Evan Li, Harikrishnan KP, Haidong Lu, Rachel A. Steinhardt, Megan E. Holtz, Mario Brützam, Matthew M. Dykes, Elke Arenholz, Sankalpa Hazra, Adriana LaVopa, Xiaoxi Huang, Wenwen Zhao, Piush Behera, Maya Ramesh, Evan Krysko, Venkatraman Gopalan, Ramamoorthy Ramesh, Craig J. Fennie, Robert J. Cava, Christo Guguschev, Alexei Gruverman, David A. Muller, Darrell G. Schlom

Abstract: Ultrathin ferroelectric films with out-of-plane polarization and high Curie temperatures are key to miniaturizing electronic devices. Most ferroelectrics employed in devices are proper ferroelectrics, where spontaneous polarization is the primary order parameter. Unfortunately, the Curie temperature of proper ferroelectrics is drastically reduced as the ferroelectric becomes thin; nearly all prope… ▽ More Ultrathin ferroelectric films with out-of-plane polarization and high Curie temperatures are key to miniaturizing electronic devices. Most ferroelectrics employed in devices are proper ferroelectrics, where spontaneous polarization is the primary order parameter. Unfortunately, the Curie temperature of proper ferroelectrics is drastically reduced as the ferroelectric becomes thin; nearly all proper ferroelectrics need to be thicker than several unit cells. The absence of an ultrathin limit has been predicted, but not verified for improper ferroelectrics. These are ferroelectrics where the polarization emerges secondary to the primary order parameter, such as a structural distortion. Here we report improper ferroelectricity with an undiminished Curie temperature in a 0.75-unit-cell-thick hexagonal LuFeO3 (h-LuFeO3) film grown on a SrCo2Ru4O11 bottom electrode with an atomically engineered monolayer bridging layer. Our results demonstrate the absence of a critical thickness for improper ferroelectricity and provide a methodology for creating ultrathin improper ferroelectrics by stabilizing their primary order parameters. △ Less

Submitted 8 March, 2025; originally announced March 2025.

Bright hybrid excitons in molecularly tunable bilayer crystals

Authors: Tomojit Chowdhury, Aurélie Champagne, Patrick Knüppel, Zehra Naqvi, Ariana Ray, Mengyu Gao, David A. Muller, Nathan Guisinger, Kin Fai Mak, Jeffrey B. Neaton, Jiwoong Park

Abstract: Bilayer crystals, built by stacking crystalline monolayers, generate interlayer potentials that govern excitonic phenomena but are constrained by fixed covalent lattices and orientations. Replacing one layer with an atomically thin molecular crystal overcomes this limitation, as diverse functional groups enable tunable molecular lattices and interlayer potentials, tailoring a wide range of exciton… ▽ More Bilayer crystals, built by stacking crystalline monolayers, generate interlayer potentials that govern excitonic phenomena but are constrained by fixed covalent lattices and orientations. Replacing one layer with an atomically thin molecular crystal overcomes this limitation, as diverse functional groups enable tunable molecular lattices and interlayer potentials, tailoring a wide range of excitonic properties. Here, we report hybrid excitons in four-atom-thick hybrid bilayer crystals (HBCs), directly synthesized with single-crystalline perylene diimide (PDI) molecular crystal atop WS2 monolayers. These excitons arise from a hybridized bilayer band structure, revealed by lattice-scale first-principles calculations, inheriting properties from both monolayers. They exhibit bright photoluminescence with near-unity polarization above and below the WS2 bandgap, along with spectral signatures of exciton delocalization, supported by theory, while their energies and intensities are tuned by modifying the HBC composition by synthesis. Our work introduces a molecule-based 2D quantum materials platform for bottom-up design and control of optoelectronic properties. △ Less

Submitted 19 February, 2025; originally announced February 2025.

Comments: arXiv admin note: text overlap with arXiv:2412.12027

Violation of Pauli Limit at KTaO3(110) Interfaces

Authors: Samuel J. Poage, Xueshi Gao, Merve Baksi, Salva Salmani-Rezaie, David A. Muller, Divine P. Kumah, Chun Ning Lau, Jose Lorenzana, Maria N. Gastiasoro, Kaveh Ahadi

Abstract: The superconducting order parameter at the KTaO3 interfaces and its dependence on interface orientation remains a subject of debate. The superconductivity at these interfaces exhibits strong resilience against in-plane magnetic field and violates Pauli limit. The interface orientation dependence of critical field and violation of Pauli limit, however, have not been investigated. To address this pr… ▽ More The superconducting order parameter at the KTaO3 interfaces and its dependence on interface orientation remains a subject of debate. The superconductivity at these interfaces exhibits strong resilience against in-plane magnetic field and violates Pauli limit. The interface orientation dependence of critical field and violation of Pauli limit, however, have not been investigated. To address this problem, we grew epitaxial LaMnO3/KTaO3 heterostructures using molecular beam epitaxy. We show that superconductivity is extremely robust against the in-plane magnetic field. Our results indicate that the interface orientation, despite impacting the critical temperature, does not affect the ratio of critical field to the Pauli limiting field. These results offer opportunities to engineer superconductors which are resilient against magnetic field. △ Less

Submitted 18 February, 2025; originally announced February 2025.

Photoinduced twist and untwist of moiré superlattices in TMDC heterobilayers

Authors: C. J. R. Duncan, A. C. Johnson, I. Maity, A. Rubio, M. Gordon, A. C. Bartnik, M. Kaemingk, W. H. Li, M. B. Andorf, C. A. Pennington, I. V. Bazarov, M. W. Tate, D. A. Muller, J. Thom-Levy, S. M. Gruner, A . M. Lindenberg, F. Liu, J. M. Maxson

Abstract: Two-dimensional moiré materials are formed by artificially stacking atomically thin monolayers. A wealth of correlated and topological quantum phases can be engineered via precise choice of stacking geometry. These designer electronic properties depend crucially on interlayer coupling and atomic registry. An important open question is how atomic registry responds on ultrafast timescales to optical… ▽ More Two-dimensional moiré materials are formed by artificially stacking atomically thin monolayers. A wealth of correlated and topological quantum phases can be engineered via precise choice of stacking geometry. These designer electronic properties depend crucially on interlayer coupling and atomic registry. An important open question is how atomic registry responds on ultrafast timescales to optical excitation and whether the moiré geometry can be dynamically reconfigured to tune emergent phenomena in real time. Here we show that femtosecond photoexcitation drives a coherent twist-untwist motion of the moiré superlattice in $2^\circ$ and $57^\circ$ twisted WSe$_2$/MoSe$_2$ heterobilayers, resolved directly by ultrafast electron diffraction. Upon above-band-gap photoexcitation, the moiré superlattice diffraction features are enhanced within 1 ps and subsequently suppressed several picoseconds after, deviating markedly from typical photoinduced lattice heating. Kinetic diffraction analysis, supported by simulations of the sample dynamics, indicates a peak-to-trough local twist angle modulation of $0.6^\circ$, correlated with a sub-THz frequency moiré phonon. This motion is driven by ultrafast charge transfer that transiently increases interlayer attraction. Our results could lead to ultrafast control of moiré periodic lattice distortions and, by extension, the local moiré potential that shapes excitons, polarons, and correlation-driven behaviors △ Less

Submitted 22 October, 2025; v1 submitted 17 February, 2025; originally announced February 2025.

Spectra-orthogonal optical anisotropy in wafer-scale molecular crystal monolayers

Authors: Tomojit Chowdhury, Fauzia Mujid, Zehra Naqvi, Ariana Ray, Ce Liang, David A. Muller, Nathan P. Guisinger, Jiwoong Park

Abstract: Controlling the spectral and polarization responses of two-dimensional (2D) crystals is vital for developing ultra-thin platforms for compact optoelectronic devices. However, independently tuning optical anisotropy and spectral response remains challenging in conventional semiconductors due to the intertwined nature of their lattice and electronic structures. Here, we report spectra-orthogonal opt… ▽ More Controlling the spectral and polarization responses of two-dimensional (2D) crystals is vital for developing ultra-thin platforms for compact optoelectronic devices. However, independently tuning optical anisotropy and spectral response remains challenging in conventional semiconductors due to the intertwined nature of their lattice and electronic structures. Here, we report spectra-orthogonal optical anisotropy, where polarization anisotropy is tuned independently of spectral response, in wafer-scale, one-atom-thick 2D molecular crystal (2DMC) monolayers synthesized on monolayer transition metal dichalcogenide (TMD) crystals. Utilizing the concomitant spectral consistency and structural tunability of perylene derivatives, we demonstrate tunable optical polarization anisotropy in 2DMCs with similar spectral profiles, as confirmed by room-temperature scanning tunneling microscopy and cross-polarized reflectance microscopy. Additional angle-dependent analysis of the single- and polycrystalline molecular domains reveals an epitaxial relationship between the 2DMC and the TMD. Our results establish a scalable, molecule-based 2D crystalline platform for unique and tunable functionalities unattainable in covalent 2D solids. △ Less

Submitted 3 February, 2025; originally announced February 2025.

Quantum oscillations of holes in GaN

Authors: Chuan F. C. Chang, Joseph E. Dill, Zexuan Zhang, Jie-Cheng Chen, Naomi Pieczulewski, Samuel J. Bader, Oscar Ayala Valenzuela, Scott A. Crooker, Fedor F. Balakirev, Ross D. McDonald, Jimy Encomendero, David A. Muller, Feliciano Giustino, Debdeep Jena, Huili Grace Xing

Abstract: GaN has emerged to be a major semiconductor akin to silicon due to its revolutionary impacts in solid state lighting, critically enabled by p-type doping, and high-performance radio-frequency and power electronics. Suffering from inefficient hole doping and low hole mobility, quantum oscillations in p-type GaN have not been observed, hindering fundamental studies of valence bands and hole transpor… ▽ More GaN has emerged to be a major semiconductor akin to silicon due to its revolutionary impacts in solid state lighting, critically enabled by p-type doping, and high-performance radio-frequency and power electronics. Suffering from inefficient hole doping and low hole mobility, quantum oscillations in p-type GaN have not been observed, hindering fundamental studies of valence bands and hole transport in GaN. Here, we present the first observation of quantum oscillations of holes in GaN. Shubnikov-de Haas (SdH) oscillations in hole resistivity are observed in a quantum-confined two-dimensional hole gas at a GaN/AlN interface, where polarization-induced doping overcomes thermal freeze-out, and a sharp and clean interface boosts the hole mobility enough to unmask the quantum oscillations. These holes degenerately occupy the light and heavy hole bands of GaN and have record-high mobilities of ~1900 cm2/Vs and ~400 cm2/Vs at 3K, respectively. We use magnetic fields up to 72 T to resolve SdH oscillations of holes from both valence bands to extract their respective sheet densities, quantum scattering times, and the effective masses of light holes (0.5-0.7 m0) and heavy holes (1.9 m0). SdH oscillations of heavy and light holes in GaN constitute a direct metrology of valence bands and open new venues for quantum engineering in this technologically important semiconductor. Like strained silicon transistors, strain-engineering of the valence bands of GaN is predicted to dramatically improve hole mobilities by reducing the hole effective mass, a proposal that can now be explored experimentally, particularly in a fully fabricated transistor, using quantum oscillations. Furthermore, the findings of this work suggest a blueprint to create 2D hole gases and observe quantum oscillations of holes in related wide bandgap semiconductors such as SiC and ZnO in which such techniques are not yet possible. △ Less

Submitted 27 January, 2025; originally announced January 2025.

Resolving Structural Origins for Superconductivity in Strain-Engineered La$_3$Ni$_2$O$_7$ Thin Films

Authors: Lopa Bhatt, Abigail Y. Jiang, Eun Kyo Ko, Noah Schnitzer, Grace A. Pan, Dan Ferenc Segedin, Yidi Liu, Yijun Yu, Yi-Feng Zhao, Edgar Abarca Morales, Charles M. Brooks, Antia S. Botana, Harold Y. Hwang, Julia A. Mundy, David A. Muller, Berit H. Goodge

Abstract: The discovery of high-temperature superconductivity in bulk La$_3$Ni$_2$O$_7$ under high hydrostatic pressure and, more recently, biaxial compression in epitaxial thin films has ignited significant interest in understanding the interplay between atomic and electronic structure in these compounds. Subtle changes in the nickel-oxygen bonding environment are thought to be key drivers for stabilizing… ▽ More The discovery of high-temperature superconductivity in bulk La$_3$Ni$_2$O$_7$ under high hydrostatic pressure and, more recently, biaxial compression in epitaxial thin films has ignited significant interest in understanding the interplay between atomic and electronic structure in these compounds. Subtle changes in the nickel-oxygen bonding environment are thought to be key drivers for stabilizing superconductivity, but specific details of which bonds and which modifications are most relevant remains so far unresolved. While direct, atomic-scale structural characterization under hydrostatic pressure is beyond current experimental capabilities, static stabilization of strained La$_3$Ni$_2$O$_7$ films provides a platform well-suited to investigation with new picometer-resolution electron microscopy methods. Here, we use multislice electron ptychography to directly measure the atomic-scale structural evolution of La$_3$Ni$_2$O$_7$ thin films across a wide range of biaxial strains tuned via substrate. By resolving both the cation and oxygen sublattices, we study strain-dependent evolution of atomic bonds, providing the opportunity to isolate and disentangle the effects of specific structural motifs for stabilizing superconductivity. We identify the lifting of crystalline symmetry through modification of the nickel-oxygen octahedral distortions under compressive strain as a key structural ingredient for superconductivity. Rather than previously supposed $c$-axis compression, our results highlight the importance of in-plane biaxial compression in superconducting thin films, which suggests an alternative -- possibly cuprate-like -- understanding of the electronic structure. Identifying local regions of inhomogeneous oxygen stoichiometry and high internal strain near crystalline defects, we suggest potential pathways for improving the sharpness and temperature of the superconducting transition. △ Less

Submitted 14 January, 2025; originally announced January 2025.

Comments: 4 figures, 3 tables, 15 supplemental figures

Superconductivity and normal-state transport in compressively strained La$_2$PrNi$_2$O$_7$ thin films

Authors: Yidi Liu, Eun Kyo Ko, Yaoju Tarn, Lopa Bhatt, Jiarui Li, Vivek Thampy, Berit H. Goodge, David A. Muller, Srinivas Raghu, Yijun Yu, Harold Y. Hwang

Abstract: The discovery of superconductivity under high pressure in Ruddlesden-Popper phases of bulk nickelates has sparked great interest in stabilizing ambient pressure superconductivity in thin-film form using epitaxial strain. Recently, signs of superconductivity have been observed in compressively strained bilayer nickelate thin films with an onset temperature exceeding 40 K, albeit with broad and two-… ▽ More The discovery of superconductivity under high pressure in Ruddlesden-Popper phases of bulk nickelates has sparked great interest in stabilizing ambient pressure superconductivity in thin-film form using epitaxial strain. Recently, signs of superconductivity have been observed in compressively strained bilayer nickelate thin films with an onset temperature exceeding 40 K, albeit with broad and two-step-like transitions. Here, we report intrinsic superconductivity and normal-state transport properties in compressively strained La$_2$PrNi$_2$O$_7$ thin films, achieved through a combination of isovalent Pr substitution, growth optimization, and precision ozone annealing. The superconducting onset occurs above 48 K, with zero resistance reached above 30 K, and the critical current density at 1.4 K is 100-fold larger than previous reports. The normal-state resistivity exhibits quadratic temperature dependence indicative of Fermi liquid behaviour, and other phenomenological similarities to transport in overdoped cuprates suggest parallels in their emergent properties. △ Less

Submitted 3 September, 2025; v1 submitted 14 January, 2025; originally announced January 2025.

Comments: 18 pages, 4 figures. The updated manuscript includes an Author Correction for the sign error in the Hall coefficient

Emittance Minimization for Aberration Correction I: Aberration correction of an electron microscope without knowing the aberration coefficients

Authors: Desheng Ma, Steven E. Zeltmann, Chenyu Zhang, Zhaslan Baraissov, Yu-Tsun Shao, Cameron Duncan, Jared Maxson, Auralee Edelen, David A. Muller

Abstract: Precise alignment of the electron beam is critical for successful application of scanning transmission electron microscopes (STEM) to understanding materials at atomic level. Despite the success of aberration correctors, aberration correction is still a complex process. Here we approach aberration correction from the perspective of accelerator physics and show it is equivalent to minimizing the em… ▽ More Precise alignment of the electron beam is critical for successful application of scanning transmission electron microscopes (STEM) to understanding materials at atomic level. Despite the success of aberration correctors, aberration correction is still a complex process. Here we approach aberration correction from the perspective of accelerator physics and show it is equivalent to minimizing the emittance growth of the beam, the span of the phase space distribution of the probe. We train a deep learning model to predict emittance growth from experimentally accessible Ronchigrams. Both simulation and experimental results show the model can capture the emittance variation with aberration coefficients accurately. We further demonstrate the model can act as a fast-executing function for the global optimization of the lens parameters. Our approach enables new ways to quickly quantify and automate aberration correction that takes advantage of the rapid measurements possible with high-speed electron cameras. In part II of the paper, we demonstrate how the emittance metric enables rapid online tuning of the aberration corrector using Bayesian optimization. △ Less

Submitted 29 December, 2024; originally announced December 2024.

Comments: 27 pages, 6 figures

Emittance Minimization for Aberration Correction II: Physics-informed Bayesian Optimization of an Electron Microscope

Authors: Desheng Ma, Steven E. Zeltmann, Chenyu Zhang, Zhaslan Baraissov, Yu-Tsun Shao, Cameron Duncan, Jared Maxson, Auralee Edelen, David A. Muller

Abstract: Aberration-corrected Scanning Transmission Electron Microscopy (STEM) has become an essential tool in understanding materials at the atomic scale. However, tuning the aberration corrector to produce a sub-Ångström probe is a complex and time-costly procedure, largely due to the difficulty of precisely measuring the optical state of the system. When measurements are both costly and noisy, Bayesian… ▽ More Aberration-corrected Scanning Transmission Electron Microscopy (STEM) has become an essential tool in understanding materials at the atomic scale. However, tuning the aberration corrector to produce a sub-Ångström probe is a complex and time-costly procedure, largely due to the difficulty of precisely measuring the optical state of the system. When measurements are both costly and noisy, Bayesian methods provide rapid and efficient optimization. To this end, we develop a Bayesian approach to fully automate the process by minimizing a new quality metric, beam emittance, which is shown to be equivalent to performing aberration correction. In part I, we derived several important properties of the beam emittance metric and trained a deep neural network to predict beam emittance growth from a single Ronchigram. Here we use this as the black box function for Bayesian Optimization and demonstrate automated tuning of simulated and real electron microscopes. We explore different surrogate functions for the Bayesian optimizer and implement a deep neural network kernel to effectively learn the interactions between different control channels without the need to explicitly measure a full set of aberration coefficients. Both simulation and experimental results show the proposed method outperforms conventional approaches by achieving a better optical state with a higher convergence rate. △ Less

Submitted 24 January, 2025; v1 submitted 29 December, 2024; originally announced December 2024.

Comments: 24 pages, 12 figures

Lattice-Matched Multiple Channel AlScN/GaN Heterostructures

Authors: Thai-Son Nguyen, Naomi Pieczulewsi, Chandrashekhar Savant, Joshua J. P. Cooper, Joseph Casamento, Rachel S. Goldman, David A. Muller, Huili G. Xing, Debdeep Jena

Abstract: AlScN is a new wide bandgap, high-k, ferroelectric material for RF, memory, and power applications. Successful integration of high quality AlScN with GaN in epitaxial layer stacks depends strongly on the ability to control lattice parameters and surface or interface through growth. This study investigates the molecular beam epitaxy growth and transport properties of AlScN/GaN multilayer heterostru… ▽ More AlScN is a new wide bandgap, high-k, ferroelectric material for RF, memory, and power applications. Successful integration of high quality AlScN with GaN in epitaxial layer stacks depends strongly on the ability to control lattice parameters and surface or interface through growth. This study investigates the molecular beam epitaxy growth and transport properties of AlScN/GaN multilayer heterostructures. Single layer Al$_{1-x}$Sc$_x$N/GaN heterostructures exhibited lattice-matched composition within $x$ = 0.09 -- 0.11 using substrate (thermocouple) growth temperatures between 330 $ ^\circ$C and 630 $ ^\circ$C. By targeting the lattice-matched Sc composition, pseudomorphic AlScN/GaN multilayer structures with ten and twenty periods were achieved, exhibiting excellent structural and interface properties as confirmed by X-ray diffraction (XRD) and scanning transmission electron microscopy (STEM). These multilayer heterostructures exhibited substantial polarization-induced net mobile charge densities of up to 8.24 $\times$ 10$^{14}$/cm$^2$ for twenty channels. The sheet density scales with the number of AlScN/GaN periods. By identifying lattice-matched growth condition and using it to generate multiple conductive channels, this work enhances our understanding of the AlScN/GaN material platform. △ Less

Submitted 11 October, 2024; originally announced October 2024.

Superconductivity in the parent infinite-layer nickelate NdNiO$_2$

Authors: C. T. Parzyck, Y. Wu, L. Bhatt, M. Kang, Z. Arthur, T. M. Pedersen, R. Sutarto, S. Fan, J. Pelliciari, V. Bisogni, G. Herranz, A. B. Georgescu, D. G. Hawthorn, L. F. Kourkoutis, D. A. Muller, D. G. Schlom, K. M. Shen

Abstract: We report evidence for superconductivity with onset temperatures up to 11 K in thin films of the infinite-layer nickelate parent compound NdNiO$_2$. A combination of oxide molecular-beam epitaxy and atomic hydrogen reduction yields samples with high crystallinity and low residual resistivities, a substantial fraction of which exhibit superconducting transitions. We survey a large series of samples… ▽ More We report evidence for superconductivity with onset temperatures up to 11 K in thin films of the infinite-layer nickelate parent compound NdNiO$_2$. A combination of oxide molecular-beam epitaxy and atomic hydrogen reduction yields samples with high crystallinity and low residual resistivities, a substantial fraction of which exhibit superconducting transitions. We survey a large series of samples with a variety of techniques, including electrical transport, scanning transmission electron microscopy, x-ray absorption spectroscopy, and resonant inelastic x-ray scattering, to investigate the possible origins of superconductivity. We propose that superconductivity could be intrinsic to the undoped infinite-layer nickelates but suppressed by disorder due to its nodal order parameter, a finding which would necessitate a reconsideration of the nickelate phase diagram. Another possible hypothesis is that the parent materials can be hole doped from randomly dispersed apical oxygen atoms, which would suggest an alternative pathway for achieving superconductivity. △ Less

Submitted 2 October, 2024; originally announced October 2024.

Comments: Main: 10 pages, 6 figures. Supplementary: 9 pages, 10 figures

Journal ref: Phys. Rev. X 15, 021048 (2025)

Structural Properties and Recrystallization Effects in Ion Beam Modified B20-type FeGe Films

Authors: Jiangteng Liu, Ryan Schoell, Xiyue S. Zhang, Hongbin Yang, M. B. Venuti, Hanjong Paik, David A. Muller, Tzu-Ming Lu, Khalid Hattar, Serena Eley

Abstract: Disordered iron germanium (FeGe) has recently garnered interest as a testbed for a variety of magnetic phenomena as well as for use in magnetic memory and logic applications. This is partially owing to its ability to host skyrmions and antiskyrmions -- nanoscale whirlpools of magnetic moments that could serve as information carriers in spintronic devices. In particular, a tunable skyrmion-antiskyr… ▽ More Disordered iron germanium (FeGe) has recently garnered interest as a testbed for a variety of magnetic phenomena as well as for use in magnetic memory and logic applications. This is partially owing to its ability to host skyrmions and antiskyrmions -- nanoscale whirlpools of magnetic moments that could serve as information carriers in spintronic devices. In particular, a tunable skyrmion-antiskyrmion system may be created through precise control of the defect landscape in B20-phase FeGe, motivating developing methods to systematically tune disorder in this material and understand the ensuing structural properties. To this end, we investigate a route for modifying magnetic properties in FeGe. Specifically, we irradiate epitaxial B20-phase FeGe films with 2.8 MeV Au$^{4+}$ ions, which creates a dispersion of amorphized regions that may preferentially host antiskyrmions at densities controlled by the irradiation fluence. To further tune the disorder landscape, we conduct a systematic electron diffraction study with in-situ annealing, demonstrating the ability to recrystallize controllable fractions of the material at temperatures ranging from approximately 150$^{\circ}$ C to 250$^{\circ}$C. Finally, we describe the crystallization kinetics using the Johnson-Mehl-Avrami-Kolmogorov model, finding that the growth of crystalline grains is consistent with diffusion-controlled one-to-two dimensional growth with a decreasing nucleation rate. △ Less

Submitted 19 December, 2024; v1 submitted 3 September, 2024; originally announced September 2024.

Electron ptychography reveals a ferroelectricity dominated by anion displacements

Authors: Harikrishnan KP, Ruijuan Xu, Kinnary Patel, Kevin J. Crust, Aarushi Khandelwal, Chenyu Zhang, Sergey Prosandeev, Hua Zhou, Yu-Tsun Shao, Laurent Bellaiche, Harold Y. Hwang, David A. Muller

Abstract: Sodium niobate, a lead-free ferroic material, hosts delicately-balanced, competing order parameters, including ferroelectric states that can be stabilized by epitaxial strain. Here, we show that the resulting macroscopic ferroelectricity exhibits an unconventional microscopic structure using multislice electron ptychography. This technique overcomes multiple scattering artifacts limiting conventio… ▽ More Sodium niobate, a lead-free ferroic material, hosts delicately-balanced, competing order parameters, including ferroelectric states that can be stabilized by epitaxial strain. Here, we show that the resulting macroscopic ferroelectricity exhibits an unconventional microscopic structure using multislice electron ptychography. This technique overcomes multiple scattering artifacts limiting conventional electron microscopy, enabling both lateral spatial resolution beyond the diffraction limit and recovery of three-dimensional structural information. These imaging capabilities allow us to separate the ferroelectric interior of the sample from the relaxed surface structure and identify the soft phonon mode and related structural distortions with picometer precision. Unlike conventional ferroelectric perovskites, we find that the polar distortion in this material involves minimal distortions of the cation sublattices and is instead dominated by anion displacements relative to the niobium sublattice. We establish limits on film thickness for interfacial octahedral rotation engineering and directly visualize a random octahedral rotation pattern, arising from the flat dispersion of the associated phonon mode. △ Less

Submitted 14 January, 2025; v1 submitted 27 August, 2024; originally announced August 2024.

Comments: 69 pages, 5 figures, 10 Extended Data figures, 10 Supplementary Figures

Journal ref: Nat. Mater. 24, 1433-1440 (2025)

Imaging interstitial atoms with multislice electron ptychography

Authors: Zhen Chen, Yu-Tsun Shao, Steven E. Zeltmann, Harikrishnan K. P., Ethan R. Rosenberg, Caroline A. Ross, Yi Jiang, David A. Muller

Abstract: Doping impurity atoms is a strategy commonly used to tune the functionality of materials including catalysts, semiconductors, and quantum emitters. The location of dopants and their interaction with surrounding atoms could significantly modulate the transport, optical, or magnetic properties of materials. However, directly imaging individual impurity atoms inside materials remains a generally unad… ▽ More Doping impurity atoms is a strategy commonly used to tune the functionality of materials including catalysts, semiconductors, and quantum emitters. The location of dopants and their interaction with surrounding atoms could significantly modulate the transport, optical, or magnetic properties of materials. However, directly imaging individual impurity atoms inside materials remains a generally unaddressed need. Here, we demonstrate how single atoms can be detected and located in three dimensions via multislice electron ptychography.Interstitial atoms in a complex garnet oxide heterostructure are resolved with a depth resolution better than 2.7 nm, together with a deep-sub-Ångstrom lateral resolution. Single-scan atomic-layer depth resolution should be possible using strongly divergent electron probe illumination. Our results provide a new approach to detecting individual atomic defects and open doors to characterize the local environments and spatial distributions that underlie a broad range of systems such as single-atom catalysts, nitrogen-vacancy centers, and other atomic-scale quantum sensors. △ Less

Submitted 25 July, 2024; originally announced July 2024.

Comments: 28 pages, 5 figures, 10 supplementary figures

Leveraging both faces of polar semiconductor wafers for functional devices

Authors: Len van Deurzen, Eungkyun Kim, Naomi Pieczulewski, Zexuan Zhang, Anna Feduniewicz-Zmuda, Mikolaj Chlipala, Marcin Siekacz, David Muller, Huili Grace Xing, Debdeep Jena, Henryk Turski

Abstract: Unlike non-polar semiconductors such as silicon, the broken inversion symmetry of the wide bandgap semiconductor gallium nitride leads to a large electronic polarization along a unique crystal axis. This makes the two surfaces of the semiconductor wafer perpendicular to the polar axis dramatically different in their physical and chemical properties. In the last three decades, the cation (gallium)… ▽ More Unlike non-polar semiconductors such as silicon, the broken inversion symmetry of the wide bandgap semiconductor gallium nitride leads to a large electronic polarization along a unique crystal axis. This makes the two surfaces of the semiconductor wafer perpendicular to the polar axis dramatically different in their physical and chemical properties. In the last three decades, the cation (gallium) face of gallium nitride has been used for photonic devices such as LEDs and lasers. Though the cation face has also been predominantly used for electronic devices, the anion (nitrogen) face has recently shown promise for high electron mobility transistors due to favorable polarization discontinuities. In this work we introduce dualtronics, showing that it is possible to make photonic devices on the cation face, and electronic devices on the anion face, of the same semiconductor wafer. This opens the possibility for leveraging both faces of polar semiconductors in a single structure, where electronic, photonic, and acoustic properties can be implemented on opposite faces of the same wafer, dramatically enhancing the functional capabilities of this revolutionary semiconductor family. △ Less

Submitted 25 September, 2024; v1 submitted 4 April, 2024; originally announced April 2024.

Millimeter-scale freestanding superconducting infinite-layer nickelate membranes

Authors: Yonghun Lee, Xin Wei, Yijun Yu, Lopa Bhatt, Kyuho Lee, Berit H. Goodge, Shannon P. Harvey, Bai Yang Wang, David A. Muller, Lena F. Kourkoutis, Wei-Sheng Lee, Srinivas Raghu, Harold Y. Hwang

Abstract: Progress in the study of infinite-layer nickelates has always been highly linked to materials advances. In particular, the recent development of superconductivity via hole-doping was predicated on the controlled synthesis of Ni in a very high oxidation state, and subsequent topotactic reduction to a very low oxidation state, currently limited to epitaxial thin films. Here we demonstrate a process… ▽ More Progress in the study of infinite-layer nickelates has always been highly linked to materials advances. In particular, the recent development of superconductivity via hole-doping was predicated on the controlled synthesis of Ni in a very high oxidation state, and subsequent topotactic reduction to a very low oxidation state, currently limited to epitaxial thin films. Here we demonstrate a process to combine these steps with a heterostructure which includes an epitaxial soluble buffer layer, enabling the release of freestanding membranes of (Nd,Sr)NiO2 encapsulated in SrTiO3, which serves as a protective layer. The membranes have comparable structural and electronic properties to that of optimized thin films, and range in lateral dimensions from millimeters to ~100 micron fragments, depending on the degree of strain released with respect to the initial substrate. The changes in the superconducting transition temperature associated with membrane release are quite similar to those reported for substrate and pressure variations, suggestive of a common underlying mechanism. These membranes structures should provide a versatile platform for a range of experimental studies and devices free from substrate constraints. △ Less

Submitted 7 February, 2024; originally announced February 2024.