Showing 1–12 of 12 results for author: Oda, Y

Noise-Robust Spin-Orbit Qubit in Germanium Holes via p-Orbital Encoding

Authors: Yasuo Oda, Jason P. Kestner

Abstract: Germanium hole spin qubits are a leading platform for semiconductor quantum computation due to their strong spin-orbit coupling, all-electrical operability, and absence of valley degeneracy. A central obstacle is charge noise, which couples to the qubit through the same spin-orbit interaction that enables fast electrical control. In this work, we propose a new operational mode of a three-hole quan… ▽ More Germanium hole spin qubits are a leading platform for semiconductor quantum computation due to their strong spin-orbit coupling, all-electrical operability, and absence of valley degeneracy. A central obstacle is charge noise, which couples to the qubit through the same spin-orbit interaction that enables fast electrical control. In this work, we propose a new operational mode of a three-hole quantum dot in a planar Ge/SiGe heterostructure, modeled within a four-band Luttinger-Kohn--Bir-Pikus framework: a spin-$p$-orbital (SpO) qubit encoded in the $p$-shell of the topmost hole. We characterize charge noise sweet spots in the parameter space of electrostatic confinement and magnetic field, and estimate that relaxation rates of the SpO qubit are comparable to those of spin qubits hosted in single holes. We then design and optimize an all-electrical Landau-Zener state-transfer protocol that induces logical qubit state transitions without microwave driving, and we show that the quadrupole-quadrupole Coulomb interaction between neighboring dots enables fast two-qubit entangling gates operated by adiabatic shuttling. △ Less

Submitted 21 August, 2026; originally announced August 2026.

Deep Learning-Accelerated Dynamic Kinetic Monte Carlo Simulation for Hydrogen Transport in Tungsten

Authors: Seiki Saito, Keisuke Takeuchi, Hiroaki Nakamura, Yasuhiro Oda, Kazuo Hoshino, Yuki Homma, Shohei Yamoto, Yuki Uchida

Abstract: In magnetic confinement fusion reactors, hydrogen plasma irradiation causes material saturation and recycling, where hydrogen released from the tungsten wall significantly impacts the peripheral plasma. Kinetic Monte Carlo (kMC) simulations are essential for investigating the dynamic balance between incident and emitted fluxes at the atomic scale. However, standard kMC frameworks are inadequate fo… ▽ More In magnetic confinement fusion reactors, hydrogen plasma irradiation causes material saturation and recycling, where hydrogen released from the tungsten wall significantly impacts the peripheral plasma. Kinetic Monte Carlo (kMC) simulations are essential for investigating the dynamic balance between incident and emitted fluxes at the atomic scale. However, standard kMC frameworks are inadequate for handling realistic material complexities, such as polycrystalline structures and dynamic evolution under irradiation, being computationally bottlenecked by continuous transition parameter updates. Conventionally, evaluating migration barriers in disordered systems (e.g., grain boundaries) relies on computationally prohibitive on-the-fly atomistic calculations like the Nudged Elastic Band (NEB) method. Here, we present a deep learning-accelerated Dynamic kMC framework that eliminates this reliance. Our approach integrates a three-stage deep learning pipeline: a pix2pix model for predicting local 3D potential energy distributions, a U-Net for extracting hydrogen trapping sites, and a 3D-CNN for directly evaluating migration barriers. To achieve macroscopic timescales, we implemented a hierarchical spatial index combined with a differential local-update algorithm operating in O(1) complexity. This architecture restricts recalculations to the immediate vicinity of moving atoms, accelerating updates. Demonstrated on a large-scale realistic polycrystalline tungsten model, the framework successfully reproduces preferential hydrogen trapping along grain boundaries, bridging the gap between atomic-scale accuracy and macroscopic timescales for full-scale plasma-wall interaction simulations. △ Less

Submitted 4 June, 2026; v1 submitted 1 June, 2026; originally announced June 2026.

Development of a 3D-CNN-based Prediction Model for Migration Barriers in Plasma-Wall Interactions

Authors: Seiki Saito, Keisuke Takeuchi, Hiroaki Nakamura, Yasuhiro Oda, Kazuo Hoshino, Yuki Homma, Shohei Yamoto, Yuki Uchida

Abstract: Understanding the long-term transport of hydrogen isotopes in plasma-facing materials, such as tungsten, is critical for the steady-state operation of magnetic confinement fusion reactors. However, dynamically updating the transition parameters for kinetic Monte Carlo (kMC) simulations as the atomic structure evolves under continuous plasma irradiation remains a severe computational bottleneck. Co… ▽ More Understanding the long-term transport of hydrogen isotopes in plasma-facing materials, such as tungsten, is critical for the steady-state operation of magnetic confinement fusion reactors. However, dynamically updating the transition parameters for kinetic Monte Carlo (kMC) simulations as the atomic structure evolves under continuous plasma irradiation remains a severe computational bottleneck. Conventionally, calculating these migration barriers requires the iterative and computationally expensive Nudged Elastic Band (NEB) method. To overcome this limitation, this article presents a highly efficient surrogate model for predicting migration barriers using a three-dimensional Convolutional Neural Network (3D-CNN), establishing the final component necessary to realize on-the-fly molecular dynamics (MD) and kMC hybrid simulations. The proposed deep learning model takes a two-channel volumetric input, the local three-dimensional potential energy distribution and the voxelized spatial coordinates of the initial and final trapping sites, to directly output the migration barrier as a scalar value. Trained on a comprehensive dataset of tungsten-hydrogen configurations evaluated using the Embedded Atom Method (EAM) potential, the model demonstrated robust predictive accuracy, achieving a Mean Absolute Error (MAE) of 0.124 eV and a high coefficient of determination of 0.890. Furthermore, utilizing GPU acceleration, the inference time is reduced to approximately 2.7 milliseconds per barrier, achieving a speed-up ratio of over 23,000 compared to conventional NEB calculations. This extraordinary acceleration effectively resolves the computational barrier of transition rate evaluations, paving the way for large-scale, dynamic modeling of plasma-wall interactions. △ Less

Submitted 4 June, 2026; v1 submitted 7 April, 2026; originally announced April 2026.

Fast charge noise sensing using a spectator valley state in a singlet-triplet qubit

Authors: David W. Kanaar, Yasuo Oda, Mark F. Gyure, J. P. Kestner

Abstract: Semiconductor spin qubits are a promising platform for quantum computing but remain vulnerable to charge noise. Accurate, in situ measurement of charge noise could enable closed-loop control and improve qubit performance. Here, we propose a method for real-time detection of charge noise using a silicon singlet-triplet qubit with one electron initialized in an excited valley state. This valley exci… ▽ More Semiconductor spin qubits are a promising platform for quantum computing but remain vulnerable to charge noise. Accurate, in situ measurement of charge noise could enable closed-loop control and improve qubit performance. Here, we propose a method for real-time detection of charge noise using a silicon singlet-triplet qubit with one electron initialized in an excited valley state. This valley excitation acts as a spectator degree of freedom, coupled to a high-quality resonator via the exchange interaction, which is sensitive to charge-noise-induced voltage fluctuations. Dispersive readout of the resonator enables a continuous, classical measurement of exchange fluctuations during qubit operation. Signal-to-noise analysis shows that, under realistic device parameters, sub-millisecond measurement times are possible using a quantum-limited amplifier. Even without such an amplifier, similar performance is achievable with appropriately engineered resonator parameters. This approach allows the probe to monitor slow drift in exchange in real time, opening the door to feedback and feedforward strategies for maintaining high-fidelity quantum operations. Importantly, the protocol preserves spin coherence and can be run concurrently with qubit logic gates. △ Less

Submitted 22 July, 2025; v1 submitted 18 July, 2025; originally announced July 2025.

Comments: 11 pages, 3 figures

Suppressing Si Valley Excitation and Valley-Induced Spin Dephasing for Long-Distance Shuttling

Authors: Yasuo Oda, Merritt P. Losert, Jason P. Kestner

Abstract: We present a scalable protocol for suppressing errors during electron spin shuttling in silicon quantum dots. The approach maps the valley Hamiltonian to a Landau-Zener problem to model the nonadiabatic dynamics in regions of small valley splitting. An optimization refines the shuttling velocity profile over a single small segment of the shuttling path. The protocol reliably returns the valley sta… ▽ More We present a scalable protocol for suppressing errors during electron spin shuttling in silicon quantum dots. The approach maps the valley Hamiltonian to a Landau-Zener problem to model the nonadiabatic dynamics in regions of small valley splitting. An optimization refines the shuttling velocity profile over a single small segment of the shuttling path. The protocol reliably returns the valley state to the ground state at the end of the shuttle, disentangling the spin and valley degrees of freedom, after which a single virtual $z$-rotation on the spin compensates its evolution during the shuttle. The time cost and complexity of the error suppression is minimal and independent of the distance over which the spin is shuttled, and the maximum velocities imposed by valley physics are found to be orders of magnitude larger than current experimentally achievable shuttling speeds. This protocol offers a chip-scale solution for high-fidelity quantum transport in silicon spin-based quantum computing devices. △ Less

Submitted 18 November, 2024; originally announced November 2024.

Point-contact spectroscopy of the heavy-fermion superconductor CePt$_{3}$Si

Authors: R. Onuki, A. Sumiyama, Y. Oda, T. Yasuda, R. Settai, Y. Onuki

Abstract: Differential resistance spectra (${\rm d}V/{\rm d}I-V$ characteristics) have been measured for point-contacts between the heavy-fermion superconductor (HFS) CePt$_{3}$Si and a normal metal. Some contacts show a peak at V=0 that is characteristic of HFS coexisting with a magnetic order such as UPd$_2$Al$_3$, UNi$_2$Al$_3$ and URu$_2$Si$_2$. The evolution of the peak occurs well above the antiferr… ▽ More Differential resistance spectra (${\rm d}V/{\rm d}I-V$ characteristics) have been measured for point-contacts between the heavy-fermion superconductor (HFS) CePt$_{3}$Si and a normal metal. Some contacts show a peak at V=0 that is characteristic of HFS coexisting with a magnetic order such as UPd$_2$Al$_3$, UNi$_2$Al$_3$ and URu$_2$Si$_2$. The evolution of the peak occurs well above the antiferromagnetic transition temperature $T_{\rm N}\sim$ 2.2 K, so that the direct relationship with the magnetic transition is questionable. The half-width of the peak seems to reflect the crystal field splitting or the spin-wave gap as observed for the above-mentioned HFSs, possibly suggesting that some common scattering process induces the zero-bias peaks in these materials. △ Less

Submitted 15 January, 2009; originally announced January 2009.

Comments: 9 pages, 5 figures, To be published in J. Phys.: Condens. Matter

Electrical Resistivity and Thermal Expansion Measurements of URu2Si2 under Pressure

Authors: Gaku Motoyama, Nobuyuki Yokoyama, Akihiko Sumiyama, Yasukage Oda

Abstract: We carried out simultaneous measurements of electrical resistivity and thermal expansion of the heavy-fermion compound URu2Si2 under pressure using a single crystal. We observed a phase transition anomaly between hidden (HO) and antiferromagnetic (AFM) ordered states at TM in the temperature dependence of both measurements. For the electrical resistivity, the anomaly at TM was very small compare… ▽ More We carried out simultaneous measurements of electrical resistivity and thermal expansion of the heavy-fermion compound URu2Si2 under pressure using a single crystal. We observed a phase transition anomaly between hidden (HO) and antiferromagnetic (AFM) ordered states at TM in the temperature dependence of both measurements. For the electrical resistivity, the anomaly at TM was very small compared with the distinct hump anomaly at the phase transition temperature T0 between the paramagnetic state (PM) and HO, and exhibited only a slight increase and decrease for the I // a-axis and c-axis, respectively. We estimated each excitation gap of HO, Delta_HO, and AFM, Delta_AFM, from the temperature dependence of electrical resistivity; Delta_HO and Delta_AFM have different pressure dependences from each other. On the other hand, the temperature dependence of thermal expansion exhibited a small anomaly at T0 and a large anomaly at TM. The pressure dependence of the phase boundaries of T0 and TM indicates that there is no critical end point and the two phase boundaries meet at the critical point. △ Less

Submitted 24 November, 2008; originally announced November 2008.

Comments: 4 pages, 4 figures

Specific Heat Study of Magnetic and Superconducting Transitions in CePt3Si

Authors: Gaku Motoyama, Katsuhiro Maeda, Yasukage Oda

Abstract: Measurements of specific heat between 80 mK to 4 K and electrical resistivity between 80 mK to 10 K were carried out for polycrystalline CePt3Si samples cut into small pieces (typically $\sim $10 mg). In the specific heat measurements, we observed an antiferromagnetic transition jump at TN = 2.2 K for all the samples, while the heights have large variations. As regards superconductivity, we obse… ▽ More Measurements of specific heat between 80 mK to 4 K and electrical resistivity between 80 mK to 10 K were carried out for polycrystalline CePt3Si samples cut into small pieces (typically $\sim $10 mg). In the specific heat measurements, we observed an antiferromagnetic transition jump at TN = 2.2 K for all the samples, while the heights have large variations. As regards superconductivity, we observed two distinct transition jumps at Tcl $\sim$ 0.45 K and Tch $\sim$ 0.75 K, which were the same for all the samples. From the measurements of specific heat and resistivity, systematic relations were found between antiferromagnetic and superconducting transitions. We conclude that antiferromagnetism, whose transition temperature is 2.2 K, coexists with superconductivity, whose transition temperature is Tcl. In this sample, residual electronic specific heat coefficient in the superconducting state $γ_{\rm s}$ was quite small, and specific heat divided by temperature below Tcl decreased almost linearly with decreasing temperature. In order to reveal the characteristic properties of the magnetism and superconductivity of the CePt3Si system, it is important to study the two superconducting phases with Tcl and Tch, respectively. △ Less

Submitted 20 February, 2008; originally announced February 2008.

Comments: 5 pages, 4 figures

Journal ref: J. Phys. Soc. Jpn. Vol.77 (2008)

AC/DC Susceptibility of the Heavy-Fermion Superconductor CePt3Si under Pressure

Authors: Yoshihiro Aoki, Akihiko Sumiyama, Gaku Motoyama, Yasukage Oda, Yasuda Settai, Yoshichika Onuki

Abstract: We have investigated the pressure dependence of ac and dc susceptibilities of the heavy-fermion superconductor CePt3Si (Tc= 0.75 K) that coexists with antiferromagnetism (TN = 2.2 K). As hydrostatic pressure is increased, Tc first decreases rapidly, then rather slowly near the critical pressure Pc = 0.6 GPa and shows a stronger decrease again at higher pressures, where Pc is the pressure at whic… ▽ More We have investigated the pressure dependence of ac and dc susceptibilities of the heavy-fermion superconductor CePt3Si (Tc= 0.75 K) that coexists with antiferromagnetism (TN = 2.2 K). As hydrostatic pressure is increased, Tc first decreases rapidly, then rather slowly near the critical pressure Pc = 0.6 GPa and shows a stronger decrease again at higher pressures, where Pc is the pressure at which TN becomes zero. A transition width and a difference in the two transition temperatures defined in the form of structures in the out-of-phase component of ac susceptibilities also become small near Pc, indicating that a double transition observed in CePt3Si is caused by some inhomogeneous property in the sample that leads to a spatial variation of local pressure. A sudden increase in the Meissner fraction above Pc suggests the influence of antiferromagnetism on superconductivity. △ Less

Submitted 6 September, 2007; originally announced September 2007.

Comments: 4 pages with 5 figures. This paper will be published in J. Phys. Soc. Jpn

NMR study of electronic state in CePt3Si

Authors: K. Ueda, K. Hamamoto, T. Kohara, G. Motoyama, Y. Oda

Abstract: In this article, we report the temperature dependence of spin-lattice relaxation rates at two Pt sites and one Si site in CePt3Si with a non-centrosymmetric structure center. 1/T1 for both Pt sites between 2 K and 300 K and 1/T1 of Si above 3 K might be explained by the contributions from the low-lying crystal-electric-field level and the quasiparticle due to the hybridization between the ground… ▽ More In this article, we report the temperature dependence of spin-lattice relaxation rates at two Pt sites and one Si site in CePt3Si with a non-centrosymmetric structure center. 1/T1 for both Pt sites between 2 K and 300 K and 1/T1 of Si above 3 K might be explained by the contributions from the low-lying crystal-electric-field level and the quasiparticle due to the hybridization between the ground state and conduction electrons. Just below Tc no remarkable enhancement in 1/T1 was observed. The estimated value of superconducting gap is about 2Delta = 3kBTc. △ Less

Submitted 24 September, 2004; originally announced September 2004.

Comments: 2 pages with 2 EPS figures. uses phb-proc4-auth.cls. Accepted for publication in Physica B

Proximity-induced superconductivity in platinum metals

Authors: D. Katayama, A. Sumiyama, Y. Oda

Abstract: The diamagnetism of platinum metals (N: Rh, Pt, Pd), which is induced by the proximity effect of a superconductor (S: Nb), has been investigated for N-S double layers. Notwithstanding the strong spin fluctuation in platinum metals, the screening distance ρin N increases with a decrease in temperature and reaches a value which is expected in comparison with ρin Cu. When magnetic impurities are in… ▽ More The diamagnetism of platinum metals (N: Rh, Pt, Pd), which is induced by the proximity effect of a superconductor (S: Nb), has been investigated for N-S double layers. Notwithstanding the strong spin fluctuation in platinum metals, the screening distance ρin N increases with a decrease in temperature and reaches a value which is expected in comparison with ρin Cu. When magnetic impurities are included in N, the proximity effect is drastically suppressed and the paramagnetism due to a giant moment is observed. △ Less

Submitted 26 August, 2003; originally announced August 2003.

Comments: 4 pages, 4 figures, to be published in Phys. Rev. B

Journal ref: Phys. Rev. B 68, 132502 (2003)

Diamagnetic Response of Normal-Superconducting Double Layers

Authors: A. Sumiyama, T. Endo, Y. Nakagawa, Y. Oda

Abstract: The diamagnetism of a normal metal (N: Cu or Au), which is induced by the proximity effect of a superconductor (S: Nb), has been investigated for N-S double layers, which are formed by a thin-film deposition process. Detailed studies of samples, which have different electronic mean-free path \ell_N in N, suggest that \ell_N should be controlled by the impurity concentration rather than the mecha… ▽ More The diamagnetism of a normal metal (N: Cu or Au), which is induced by the proximity effect of a superconductor (S: Nb), has been investigated for N-S double layers, which are formed by a thin-film deposition process. Detailed studies of samples, which have different electronic mean-free path \ell_N in N, suggest that \ell_N should be controlled by the impurity concentration rather than the mechanical imperfections in the lattice in order to clarify the \ell_N dependence of the proximity effect. Both the screening distance ρin N and the parameter νin ρ\propto T^-νincrease with an increase in \ell_N. This result can be understood on the assumption that the normal metal changes its behavior from the "dirty" limit (ξ_N>\ell_N) to the "clean" limit (ξ_N<\ell_N), where ξ_N is the coherence length in N. △ Less

Submitted 10 November, 2000; originally announced November 2000.

Comments: 5 pages, 6 Postscript figures, to be published in J. Phys. Soc. Jpn

Journal ref: J. Phys. Soc. Jpn. 70 (2001) 228.