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Giant Surface-driven Nonlinear Hall Effect in BiTeCl at Room Temperature
Authors:
Zhihua Liu,
Ziheng Wang,
Yongbo Lv,
Hanru Feng,
Zhiwei Zhang,
Bo Zhang,
Feng Liu,
Guohua Wang,
Shengwei Jiang,
Hao Chu,
Hui Li,
Dong Qian
Abstract:
The nonlinear Hall effect (NLHE) provides a pathway to generate a Hall response in time-reversal-symmetric yet inversion-symmetry-broken systems. NLHE can rectify an alternating current into a transverse direct voltage, making it attractive for radio-frequency rectification, energy harvesting, and terahertz detection, applications for which device miniaturization remains a central pursuit. In this…
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The nonlinear Hall effect (NLHE) provides a pathway to generate a Hall response in time-reversal-symmetric yet inversion-symmetry-broken systems. NLHE can rectify an alternating current into a transverse direct voltage, making it attractive for radio-frequency rectification, energy harvesting, and terahertz detection, applications for which device miniaturization remains a central pursuit. In this context, the inherent inversion symmetry breaking at surfaces is particularly appealing: because symmetry is necessarily broken at the surface of any crystal, irrespective of whether its bulk is centrosymmetric, surface-driven nonlinear responses lift the stringent constraint on bulk symmetry and open a route toward compact device architectures. Here we report the observation of a giant, surface-driven second-order nonlinear Hall effect in the Rashba-type polar semiconductor BiTeCl at room temperature. The determined second-order nonlinear Hall susceptibility at 300 K reaches 1.68 $μ$mV$^{-1}$, which is 80 times larger than that of the best previously reported surface-dominated systems. We attribute this giant response to the synergistic interplay between BiTeCl's polar crystal structure and its rich surface states: the polar stacking renders the top and bottom surfaces inequivalent, so that the nonlinear response originates from a single surface without compensation from the other. Symmetry and scaling analyses suggest that both skew-scattering and side-jump mechanisms contribute to the observed effect. Our findings not only identify BiTeCl as a promising platform for future applications utilizing the NLHE, but also establish the asymmetry between the opposite surfaces of a polar crystal as a general design principle for discovering surface-driven materials with larger nonlinear Hall responses.
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Submitted 24 August, 2026;
originally announced August 2026.
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Evolution of topological phases in atomically thin WTe2 films
Authors:
Changcang Qiao,
Chen-Chia Hsu,
Tao Zhang,
Zhiming Sun,
Dong Qian,
Yang-hao Chan,
Peng Chen
Abstract:
Topological materials ranging from topological insulators to semimetals host many novel quantum phenomena including quantum spin Hall effect and topological Fermi arcs. Transitions between these topological phases have attracted much research interest. We performed angle-resolved photoemission spectroscopy (ARPES) on WTe2 ranging from a monolayer to the bulk and reveal the evolution of the electro…
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Topological materials ranging from topological insulators to semimetals host many novel quantum phenomena including quantum spin Hall effect and topological Fermi arcs. Transitions between these topological phases have attracted much research interest. We performed angle-resolved photoemission spectroscopy (ARPES) on WTe2 ranging from a monolayer to the bulk and reveal the evolution of the electronic structure and the band gap. Notably, the gap observed in the monolayer system is suppressed in the three layers, where the film becomes metallic. Variations in the topological properties with thickness are demonstrated by the first-principles calculations. Topological Z2 invariant is shown to oscillate between 1 and 0 with the addition of layers, originating from the interlayer coupling-induced change in band crossing. The system evolves into a Weyl semimetal when the conduction and valence bands touch near the Fermi level and the topological nature is described by the Chern number. Our findings demonstrate the non-monotonic dependence of topological states on dimensionality and how layer-driven electronic band reconfiguration leads to phase transitions in solids.
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Submitted 18 April, 2026;
originally announced April 2026.
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Enhancing Neural-Network Variational Monte Carlo through Basis Transformation
Authors:
Zhixuan Liu,
Dongheng Qian,
Jing Wang
Abstract:
Neural-network variational Monte Carlo (NNVMC) has emerged as a powerful tool for solving quantum many-body problems, yet systematic pathways for improving its accuracy remain largely heuristic. Here, we introduce a physically motivated basis transformation for NNVMC that enhances variational expressivity without increasing the complexity of the neural-network ansatz itself. By formulating the man…
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Neural-network variational Monte Carlo (NNVMC) has emerged as a powerful tool for solving quantum many-body problems, yet systematic pathways for improving its accuracy remain largely heuristic. Here, we introduce a physically motivated basis transformation for NNVMC that enhances variational expressivity without increasing the complexity of the neural-network ansatz itself. By formulating the many-body wave function in a Gaussian basis, we introduce a single learnable locality parameter, $α$, that reshapes the target ground state into a more learnable representation. This approach introduces minimal computational overhead and can be readily combined with existing neural-network architectures. Using the three-dimensional homogeneous electron gas as a benchmark, we show that the optimized basis transformation consistently lowers the variational energy for both FermiNet and message-passing neural-network architectures. Notably, for the latter, it enables a more precise determination of the Fermi liquid to Wigner crystal phase transition. More broadly, our results highlight basis transformation as a new route to improving NNVMC in continuous space, showing that accuracy can be enhanced not only by refining the ansatz but also by making the target ground state easier to represent.
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Submitted 3 June, 2026; v1 submitted 17 April, 2026;
originally announced April 2026.
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Hydrostatic Pressure-enhanced correlated magnetism and Chern insulator in moir'e WSe2
Authors:
Pengfei Jiao,
Chenghao Qian,
Ning Mao,
Xumin Chang,
Jiayong Xiao,
Feng Liu,
Shaozheng Wang,
Xiaokai Wu,
Di Peng,
Cheng Xu,
Hongliang Dong,
Yuchen Zheng,
Juncai Wu,
Tong Zheng,
Kenji Watanabe,
Takashi Taniguchi,
Jinfeng Jia,
Xiaoxue Liu,
Zhiwen Shi,
Shiyong Wang,
Guorui Chen,
Tingxin Li,
Ruidan Zhong,
Yang Zhang,
Dong Qian
, et al. (2 additional authors not shown)
Abstract:
Moiré semiconductors offer flat bands where Coulomb interactions and band topology intertwine, while interlayer coupling plays a central role in forming the moiré potential. However, limited interlayer coupling strength and the lack of efficient tuning methods hinder further exploration of correlated phenomena in moiré semiconductors. Here we introduce a cryogenic dual-gated diamond-anvil platform…
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Moiré semiconductors offer flat bands where Coulomb interactions and band topology intertwine, while interlayer coupling plays a central role in forming the moiré potential. However, limited interlayer coupling strength and the lack of efficient tuning methods hinder further exploration of correlated phenomena in moiré semiconductors. Here we introduce a cryogenic dual-gated diamond-anvil platform using helium as a pressure medium, enabling reversible hydrostatic tuning together with magneto-optical spectroscopy in twisted bilayer WSe2. Pressure enhances the moiré potential, redshifts excitons, and stabilizes Stoner ferromagnetism otherwise absent at a 3.1-degree twist. Simultaneously, the half-filled C = 1 Chern insulating state strengthens, exhibiting a reduced saturation field. Moreover, we observe a topological phase transition from a Chern insulator to a Mott insulator at around 2 GPa. First-principles calculations reveal that a Gamma-to-K valence-band-maximum switching drives this transition by converting an Ising-like topological K-valley miniband into a spin-degenerate trivial Gamma miniband. Our findings demonstrate hydrostatic pressure as a powerful, continuous control axis for correlated magnetism and topological band engineering in moiré materials.
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Submitted 17 February, 2026;
originally announced February 2026.
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Ferroelectricity in Atomically Thin Metallic TaNiTe$_5$ with Ultrahigh Carrier Density
Authors:
Zhihua Liu,
Shichong Song,
Xunqing Yin,
Chenhang Xu,
Feng Liu,
Guohua Wang,
Peng Chen,
Shengwei Jiang,
Chunqiang Xu,
Xiaofeng Xu,
Weidong Luo,
Dong Qian
Abstract:
Ferroelectric metals, characterized by the coexistence of ferroelectricity and metallic conductivity, present a fundamental challenge due to the screening effect of free charge carriers on the long-range electric dipole order. Existing strategies to circumvent this obstacle include employing two-dimensional (2D) crystals, where reduced dimensionality and low carrier densities suppress screening, o…
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Ferroelectric metals, characterized by the coexistence of ferroelectricity and metallic conductivity, present a fundamental challenge due to the screening effect of free charge carriers on the long-range electric dipole order. Existing strategies to circumvent this obstacle include employing two-dimensional (2D) crystals, where reduced dimensionality and low carrier densities suppress screening, or designing materials of van der Waals (vdW) superlattice with spatially separated and decoupled conductive and nearly insulating ferroelectric layers. Here, we report an alternative paradigm in TaNiTe5, where an ultrahigh carrier density coexists with an out-of-plane ferroelectric order within the same surface monolayer. Using piezoresponse force microscopy (PFM), we observed robust ferroelectric behavior in TaNiTe5 down to single-unit-cell thickness (~1.3 nm) at room temperature. Scanning transmission electron microscopy (STEM) gives structural evidence that the ferroelectricity might originate from the vertical displacement of outmost Te atoms on the surface, breaking the inversion symmetry. Concurrently, electrical transport measurements reveal a metallic state with a carrier density on the order of 10$^{15}$ cm$^{-2}$ (or 10$^{22}$ cm$^{-3}$) -- comparable to that of Copper (Cu). Our findings establish a unique platform for exploring the interplay between ferroelectricity and an ultrahigh density of mobile carriers in the 2D limit.
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Submitted 5 February, 2026;
originally announced February 2026.
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Superconductivity in non-centrosymmetric rhombohedral NbSe2
Authors:
Zhengxian Li,
Xiaoyu Shen,
Kai Liu,
Yating Sha,
Tianyang Wang,
Feng Liu,
Qingchen Duan,
Kenji Watanabe,
Takashi Taniguchi,
Peng Chen,
Shiyong Wang,
Ruidan Zhong,
Dong Qian,
Shengwei Jiang,
Yufan Li,
Noah F. Q. Yuan,
Guorui Chen
Abstract:
Crystal stacking offers a powerful yet underexplored route to engineer symmetry in layered superconductors. Here we report superconductivity in rhombohedral-stacked NbSe2 (3R-NbSe2), a non-centrosymmetric polytype in which global inversion symmetry is removed by stacking alone. Using comprehensive structural, transport, magnetic, and thermodynamic measurements, we establish superconductivity as a…
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Crystal stacking offers a powerful yet underexplored route to engineer symmetry in layered superconductors. Here we report superconductivity in rhombohedral-stacked NbSe2 (3R-NbSe2), a non-centrosymmetric polytype in which global inversion symmetry is removed by stacking alone. Using comprehensive structural, transport, magnetic, and thermodynamic measurements, we establish superconductivity as a bulk property of the 3R phase and find that the in-plane upper critical field exceeds the Pauli paramagnetic limit, indicating the persistence of strong Ising-type spin-orbit coupling. Unlike the thickness-dependent superconductivity in centrosymmetric 2H-NbSe2, the superconducting transition temperature in 3R-NbSe2 shows little dependence on layer number but exhibits an unusually strong sensitivity to disorder. We further observe strongly enhanced nonlinear optical and electrical responses near the superconducting transition, consistent with stacking-induced inversion-symmetry breaking. Our results identify 3R-NbSe2 as a single-phase platform in which stacking engineering reshapes superconductivity and enables nonlinear transport phenomena in layered materials.
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Submitted 23 January, 2026;
originally announced January 2026.
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Decoupled interband pairing in a bilayer iron-based superconductor evidenced by ultrahigh-resolution ARPES
Authors:
Shichong Wang,
Yuanyuan Yang,
Yang Li,
Wenshan Hong,
Huaxun Li,
Shaofeng Duan,
Lingxiao Gu,
Haoran Liu,
Jiongyu Huang,
Jianzhe Liu,
Dong Qian,
Guanghan Cao,
Huiqian Luo,
Wentao Zhang
Abstract:
We present direct experimental evidence of a weakly coupled multiband superconducting state in the bilayer iron-based superconductor ACa$_2$Fe$_4$As$_4$F$_2$ (A = K, Cs) via ultrahigh-resolution angle-resolved photoemission spectroscopy (ARPES). Remarkably, the K-containing compound exhibits two distinct transition temperatures, corresponding to two separate sets of bilayer-split bands, as evidenc…
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We present direct experimental evidence of a weakly coupled multiband superconducting state in the bilayer iron-based superconductor ACa$_2$Fe$_4$As$_4$F$_2$ (A = K, Cs) via ultrahigh-resolution angle-resolved photoemission spectroscopy (ARPES). Remarkably, the K-containing compound exhibits two distinct transition temperatures, corresponding to two separate sets of bilayer-split bands, as evidenced by temperature-dependent superconducting gap and spectral weight near the Fermi energy, while its Cs counterpart displays conventional single transition behavior. These experimental observations are well described by the weakly coupled two-band model of Eilenberger theory, which identifies suppressed interband pairing interactions between the bilayer-split bands as the key mechanism. By exploring quantum phenomena in the weak-coupling limit within a multiband system, our findings pave the way for engineering exotic superconductivity via band-selective pairing control.
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Submitted 12 January, 2026;
originally announced January 2026.
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Transformation Journey of Zr-based MOFs: Study on Mechanics and Hydrogen Storage under Doping Regulation
Authors:
Yanhuai Ding,
Dan Qian,
Zhipeng Liu
Abstract:
This study delves into the transformation journey of Zr-based Metal-Organic Frameworks (MOFs), focusing on enhancing their mechanical properties and hydrogen storage capacities through doping regulation. MOFs, a versatile class of crystalline porous materials, have garnered significant attention due to their unique properties and broad potential applications in gas storage, separation, catalysis,…
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This study delves into the transformation journey of Zr-based Metal-Organic Frameworks (MOFs), focusing on enhancing their mechanical properties and hydrogen storage capacities through doping regulation. MOFs, a versatile class of crystalline porous materials, have garnered significant attention due to their unique properties and broad potential applications in gas storage, separation, catalysis, and sensing. Among them, Zr-based MOFs stand out for their exceptional stability and high surface area. This research systematically investigates six key Zr-based MOFs (UIO-66, UIO-67, UIO-68, MOF-801, MOF-802, and MOF-841) using multiscale computational methods, including molecular dynamics (MD) simulations, grand canonical Monte Carlo (GCMC) simulations, and density functional theory (DFT). The study explores the impact of metal ion substitution (Fe, Co, Ni, Cu, Zn) on the mechanical and hydrogen storage properties of these MOFs. Our findings reveal that metal ion substitution significantly influences the mechanical stability and hydrogen adsorption capacity of Zr-based MOFs, providing valuable insights for the design and optimization of high-performance MOF materials.
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Submitted 6 January, 2026;
originally announced January 2026.
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From fractional Chern insulators to topological electronic crystals in moiré MoTe2: quantum geometry tuning via remote layer
Authors:
Feng Liu,
Fan Xu,
Cheng Xu,
Jiayi Li,
Zheng Sun,
Jiayong Xiao,
Ning Mao,
Xumin Chang,
Xinglin Tao,
Kenji Watanabe,
Takashi Taniguchi,
Jinfeng Jia,
Ruidan Zhong,
Zhiwen Shi,
Shiyong Wang,
Guorui Chen,
Xiaoxue Liu,
Dong Qian,
Yang Zhang,
Tingxin Li,
Shengwei Jiang
Abstract:
The quantum geometry of Bloch wavefunctions,encoded in the Berry curvature and quantum metric, is believed to be a decisive ingredient in stabilizing fractional quantum anomalous Hall (FQAH) effect(i.e., fractional Chern insulator, FCI, at zero magnetic field), against competing symmetry-breaking phases.A direct experimental demonstration of quantum geometry-driven switching between distinct corre…
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The quantum geometry of Bloch wavefunctions,encoded in the Berry curvature and quantum metric, is believed to be a decisive ingredient in stabilizing fractional quantum anomalous Hall (FQAH) effect(i.e., fractional Chern insulator, FCI, at zero magnetic field), against competing symmetry-breaking phases.A direct experimental demonstration of quantum geometry-driven switching between distinct correlated topological phases, however, has been lacking. Here, we report experimental evidence of such a switch in a high-quality 3.7 twisted MoTe2 (tMoTe2) device consisting of both A-A bilayer and A-AB trilayer regions. While composite Fermi liquid CFL/FQAH phases are established in A-A tMoTe2,the A-AB region-effectively an A-A moire bilayer proximitized by a remote B layer-develops a series of topological electronic crystal (TEC, also referred to as generalized QAH crystal, QAHC) states with integer quantized Hall conductance at commensurate fractional fillings v=1/2, 2/3, and an incommensurate filling factor v=0.53.The electrostatic phase diagram is mapped out by combined transport and optical measurements, showing that these TEC states emerge within the first moir'e valence band prior to any charge transfer to the B layer. Exact diagonalization (ED) incorporating the remote-layer-induced intralayer potential demonstrates a transition from a CFL-like manifold in the A-A limit to a Chern number C=1 ground-state consistent with a TEC at v=1/2 , accompanied by the further breakdown of ideal band geometry. Our results provide experimental evidence of quantum geometry-tuned competition between FQAH/CFL and TEC phases in a moiré Chern band and pave the way for further exploring correlation-driven topological phenomena by tuning quantum geometry.
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Submitted 3 December, 2025;
originally announced December 2025.
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Data-Driven Learnability Transition of Measurement-Induced Entanglement
Authors:
Dongheng Qian,
Jing Wang
Abstract:
Measurement-induced entanglement (MIE) captures how local measurements generate long-range quantum correlations and drive dynamical phase transitions in many-body systems. Yet estimating MIE experimentally remains challenging: direct evaluation requires extensive post-selection over measurement outcomes, raising the question of whether MIE is accessible with only polynomial resources. We address t…
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Measurement-induced entanglement (MIE) captures how local measurements generate long-range quantum correlations and drive dynamical phase transitions in many-body systems. Yet estimating MIE experimentally remains challenging: direct evaluation requires extensive post-selection over measurement outcomes, raising the question of whether MIE is accessible with only polynomial resources. We address this challenge by reframing MIE detection as a data-driven learning problem that assumes no prior knowledge of state preparation. Using measurement records alone, we train a neural network in a self-supervised manner to predict the uncertainty metric for MIE--the gap between upper and lower bounds of the average post-measurement bipartite entanglement. Applied to random circuits with one-dimensional all-to-all connectivity, our method reveals a learnability transition with increasing circuit depth: below a threshold the MIE can be effectively learned with resources that grow only polynomially with system size, whereas above it the required resources grow exponentially. This computational phase transition coincides with the breakdown of efficient classical simulation of the underlying quantum state. We further observe signatures of this transition on current noisy quantum devices. These results highlight the power of data-driven approaches for learning MIE and delineate the practical limits of its classical learnability.
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Submitted 10 July, 2026; v1 submitted 1 December, 2025;
originally announced December 2025.
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Tunable Luttinger liquid and correlated insulating states in one-dimensional moiré superlattices
Authors:
Jiajun Chen,
Bosai Lyu,
Liguo Wang,
Shuo Lou,
Xianliang Zhou,
Tongyao Wu,
Jingxu Xie,
Yi Chen,
Cheng Hu,
Kenji Watanabe,
Takashi Taniguchi,
Guibai Xie,
Mengzhou Liao,
Wei Yang,
Guangyu Zhang,
Binbin Wei,
Xiaoqun Wang,
Qi Liang,
Guohua Wang,
Jie Ma,
Dong Qian,
Guorui Chen,
Tingxin Li,
Mingpu Qin,
Xiao Yan Xu
, et al. (1 additional authors not shown)
Abstract:
Two-dimensional moiré superlattices have been extensively studied, and a variety of correlated phenomena have been observed. However, their lower-dimensional counterpart, one-dimensional (1D) moiré superlattices, remain largely unexplored. Electrons in 1D are generally described by Luttinger liquid theory, with universal scaling relations depending only on the Luttinger parameter g. In particular,…
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Two-dimensional moiré superlattices have been extensively studied, and a variety of correlated phenomena have been observed. However, their lower-dimensional counterpart, one-dimensional (1D) moiré superlattices, remain largely unexplored. Electrons in 1D are generally described by Luttinger liquid theory, with universal scaling relations depending only on the Luttinger parameter g. In particular, at half-filling, Umklapp scattering plays a crucial role, as it can significantly change the conductance-temperature scaling relation and lead to Mott insulators. However, this prediction has never been observed since doping an empty band to half-filling was extremely difficult. Here, we show that the marriage of moiré superlattices and 1D electrons makes it possible to study the Luttinger liquid in an exceptionally wide filling region simply by electrical gating. We perform transport measurements on 1D moiré superlattices of carbon nanotubes on hexagonal boron nitride (hBN) substrates, and observe correlated insulating states at 1/4 and 1/2 fillings of the superlattice mini-band, where Umklapp scattering becomes dominant. We also observe a T-linear conductance at these commensurate fillings over a range of temperatures. Strikingly, the T-linear conductance leads to a strongly suppressed Luttinger parameter, suggesting a state of extreme correlation.
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Submitted 16 November, 2025;
originally announced November 2025.
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Structural contribution to light-induced gap suppression in Ta$_2$NiSe$_5$
Authors:
Zijing Chen,
Chenhang Xu,
Chendi Xie,
Weichen Tang,
Qiaomei Liu,
Dong Wu,
Qing Xu,
Tao Jiang,
Pengfei Zhu,
Xiao Zou,
Jun Li,
Zhiwei Wang,
Nanlin Wang,
Dong Qian,
Alfred Zong,
Dao Xiang
Abstract:
An excitonic insulator is a material that hosts an exotic ground state, where an energy gap opens due to spontaneous condensation of bound electron-hole pairs. Ta$_2$NiSe$_5$ is a promising candidate for this type of material, but the coexistence of a structural phase transition with the gap opening has led to a long-standing debate regarding the origin of the insulating gap. Here we employ MeV ul…
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An excitonic insulator is a material that hosts an exotic ground state, where an energy gap opens due to spontaneous condensation of bound electron-hole pairs. Ta$_2$NiSe$_5$ is a promising candidate for this type of material, but the coexistence of a structural phase transition with the gap opening has led to a long-standing debate regarding the origin of the insulating gap. Here we employ MeV ultrafast electron diffraction to obtain quantitative insights into the atomic displacements in Ta$_2$NiSe$_5$ following photoexcitation, which has been overlooked in previous time-resolved spectroscopy studies. In conjunction with first-principles calculations using the measured atomic displacements, we find that the structural change can largely account for the photoinduced reduction in the energy gap without considering excitonic effects. Our work illustrates the importance of a quantitative reconstruction of individual atomic pathways during nonequilibrium phase transitions, paving the way for a mechanistic understanding of a diverse array of phase transitions in correlated materials where lattice dynamics can play a pivotal role.
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Submitted 18 August, 2025; v1 submitted 17 August, 2025;
originally announced August 2025.
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In-Plane Magnetic Anisotropy and Large topological Hall Effect in Self-Intercalated Ferromagnet Cr1.61Te2
Authors:
Yalei Huang,
Na Zuo,
Zheyi Zhang,
Xiangzhuo Xing,
Xinyu Yao,
Anlei Zhang,
Haowei Ma,
Chunqiang Xu,
Wenhe Jiao,
Wei Zhou,
Raman Sankar,
Dong Qian,
Xiaofeng Xu
Abstract:
Self-intercalated chromium tellurides Cr1+xTe2 have garnered growing attention due to their high-temperature ferromagnetism, tunable spin structures and air stability, all of which are vital for versatile applications in next-generation memory and information technology. Here, we report strong magnetic anisotropy and a large topological Hall effect (THE) in self-intercalated Cr1.61Te2 single cryst…
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Self-intercalated chromium tellurides Cr1+xTe2 have garnered growing attention due to their high-temperature ferromagnetism, tunable spin structures and air stability, all of which are vital for versatile applications in next-generation memory and information technology. Here, we report strong magnetic anisotropy and a large topological Hall effect (THE) in self-intercalated Cr1.61Te2 single crystals, which are both highly desirable properties for future spintronic applications. Our results demonstrate that Cr1.61Te2 is a soft ferromagnet with strong in-plane magnetic anisotropy. Remarkably, distinct THE behaviors are observed in different temperature regimes, reflecting the intricate spin structures and competing exchange interactions. More interestingly, a large topological Hall resistivity, induced by microscopic non-coplanar spin structures, emerges in the temperature range 70-240 K, reaching a maximum value of 0.93 μΩ cm at 150 K. Moreover, a sign-reversed and weak THE is observed at low temperatures below ~70 K, indicating the emergence of an additional topological spin structure with opposite topological charges. This work not only offers valuable insights into the correlation between magnetocrystalline anisotropy and topological phenomena in Cr1+xTe2 systems, but also provides a robust platform for engineering the evolution of complex spin textures that can be leveraged in diverse spintronic device applications.
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Submitted 30 July, 2025;
originally announced July 2025.
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Fluctuated lattice-driven charge density wave far above the condensation temperature in kagome superconductor KV$_3$Sb$_5$
Authors:
Haoran Liu,
Shaofeng Duan,
Xiangqi Liu,
Zhihua Liu,
Shichong Wang,
Lingxiao Gu,
Jiongyu Huang,
Wenxuan Yang,
Jianzhe Liu,
Dong Qian,
Yanfeng Guo,
Wentao Zhang
Abstract:
The kagome material AV$_3$Sb$_5$ exhibits multiple exotic orders, including an unconventional charge density wave (CDW). Elucidating the underlying mechanism behind the CDW transition is crucial for unraveling the complex interactions among these phases. However, the driving force of the CDW remains a topic of debate due to the intertwined interactions among the system's various excitations. Here…
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The kagome material AV$_3$Sb$_5$ exhibits multiple exotic orders, including an unconventional charge density wave (CDW). Elucidating the underlying mechanism behind the CDW transition is crucial for unraveling the complex interactions among these phases. However, the driving force of the CDW remains a topic of debate due to the intertwined interactions among the system's various excitations. Here we investigated the CDW transition in KV$_3$Sb$_5$ by isolating the ultrafast electronic phase transition using time- and angleresolved photoemission spectroscopy. An ultrafast electronic phase transition was observed at a critical photoexcitation fluence, F$_c$, without reduction in CDW lattice-distortion-induced band folding. This folded band persisted up to 150 K under equilibrium heating, well above the CDW condensation temperature of T$_c$ = 78 K. Notably, the pump-induced band shifts at F$_c$ were comparable to those caused by thermal effects at T$_c$. These findings suggest that in KV$_3$Sb$_5$, a fluctuating lattice-driven in-plane CDW emerges above 150 K, with out-of-plane electronic correlations leading to the $2\times2 \times 2$ CDW near T$_c$, offering key insights into the interplay between the electronic and structural dynamics in AV$_3$Sb$_5$.
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Submitted 25 April, 2025; v1 submitted 23 April, 2025;
originally announced April 2025.
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Design Topological Materials by Reinforcement Fine-Tuned Generative Model
Authors:
Haosheng Xu,
Dongheng Qian,
Zhixuan Liu,
Yadong Jiang,
Jing Wang
Abstract:
Topological insulators (TIs) and topological crystalline insulators (TCIs) are materials with unconventional electronic properties, making their discovery highly valuable for practical applications. However, such materials, particularly those with a full band gap, remain scarce. Given the limitations of traditional approaches that scan known materials for candidates, we focus on the generation of…
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Topological insulators (TIs) and topological crystalline insulators (TCIs) are materials with unconventional electronic properties, making their discovery highly valuable for practical applications. However, such materials, particularly those with a full band gap, remain scarce. Given the limitations of traditional approaches that scan known materials for candidates, we focus on the generation of new topological materials through a generative model. Specifically, we apply reinforcement fine-tuning (ReFT) to a pre-trained generative model, thereby aligning the model's objectives with our material design goals. We demonstrate that ReFT is effective in enhancing the model's ability to generate TIs and TCIs, with minimal compromise on the stability of the generated materials. Using the fine-tuned model, we successfully identify a large number of new topological materials, with Ge$_2$Bi$_2$O$_6$ serving as a representative example--a TI with a full band gap of 0.26 eV, ranking among the largest known in this category.
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Submitted 17 April, 2025;
originally announced April 2025.
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Evidence of competing ground states between fractional Chern insulator and antiferromagnetism in moiré MoTe2
Authors:
Xumin Chang,
Feng Liu,
Fan Xu,
Cheng Xu,
Jiayong Xiao,
Zheng Sun,
Pengfei Jiao,
Yixin Zhang,
Shaozheng Wang,
Bohan Shen,
Renjie He,
Kenji Watanabe,
Takashi Taniguchi,
Ruidan Zhong,
Jinfeng Jia,
Zhiwen Shi,
Xiaoxue Liu,
Yang Zhang,
Dong Qian,
Tingxin Li,
Shengwei Jiang
Abstract:
Two-dimensional moire materials present unprecedented opportunities to explore quantum phases of matter arising from the interplay of band topology and strong correlations.One of the most striking examples is the recent observation of fractional quantum anomalous Hall (FQAH) effect in twisted bilayer MoTe$_2$ (tMoTe2) with relatively large twist angles(~3.7deg-3.9deg). The electronic ground states…
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Two-dimensional moire materials present unprecedented opportunities to explore quantum phases of matter arising from the interplay of band topology and strong correlations.One of the most striking examples is the recent observation of fractional quantum anomalous Hall (FQAH) effect in twisted bilayer MoTe$_2$ (tMoTe2) with relatively large twist angles(~3.7deg-3.9deg). The electronic ground states are usually expected to be sensitive to the twist angle, as the twist angle determines the electron bandwidth and correlation strength in the moire system. Here, we report the observation of unexpected competing magnetic ground states in tMoTe2 moire superlattice, on which balance can be tipped by both twist angle and electric field (E). Specifically, we observed anomalous antiferromagnetic (AFM) ground states with zero Hall resistance at both v_h=1 and 2/3, at intermediate twist angles ~3deg. The AFM orders are suppressed by applying vertical E, and emergent ferromagnetism accompanied by integer Chern insulator (ICI) or fractional Chern insulator (FCI) states are observed near the critical E (E_c) of moire superlattice symmetry transition. Our results demonstrate tMoTe2 as a fascinating platform for exploring unexpected correlated phases with nontrivial topology and fractional excitations and point to electric-field-controlled ultralow-power spin-valleytronic devices.
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Submitted 15 May, 2025; v1 submitted 17 March, 2025;
originally announced March 2025.
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Revealing Superconducting Chiral Edge Modes via Resistance Distributions
Authors:
Linghao Huang,
Dongheng Qian,
Jing Wang
Abstract:
Inducing superconducting correlations in quantum anomalous Hall (QAH) states offers a promising route to realize topological superconductivity with chiral Majorana edge modes. However, the definitive identification of these modes is challenging. Here we propose detecting superconducting chiral edge modes via the probability distribution of the resistance, or equivalently the charge transmission of…
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Inducing superconducting correlations in quantum anomalous Hall (QAH) states offers a promising route to realize topological superconductivity with chiral Majorana edge modes. However, the definitive identification of these modes is challenging. Here we propose detecting superconducting chiral edge modes via the probability distribution of the resistance, or equivalently the charge transmission of QAH-superconductor heterojunctions. Remarkably, the distribution for coherent edge exhibits distinct characteristics for different topological superconducting phases in sufficiently long junctions, and this difference remains robust against weak decoherence. These findings provide insights into transport phenomena beyond the clean limit and highlight the resistance distribution as a compelling signature for distinguishing topological superconducting phases.
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Submitted 13 January, 2026; v1 submitted 14 March, 2025;
originally announced March 2025.
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Pressure-driven superconductivity in the topological insulator GeBi4Te7
Authors:
Yalei Huang,
Na Zuo,
Zheyi Zhang,
Chunqiang Xu,
Xiangzhuo Xing,
Wen-He Jiao,
Bin Li,
Wei Zhou,
Xiaobing Liu,
Dong Qian,
Xiaofeng Xu
Abstract:
The van der Waals, pseudo-binary chalcogenides (ACh)m(Pn2Ch3)n (A = Ge, Mn, Pb, etc.; Pn = Sb or Bi; Ch = Te, Se) have recently been reported to host a vast landscape of topological phases of matter, including the quantum anomalous Hall state and topological axion state with quantized magnetoelectric effect. A subgroup in this series, like MnSb4Te7 and GeSb4Te7, can be driven to a superconducting…
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The van der Waals, pseudo-binary chalcogenides (ACh)m(Pn2Ch3)n (A = Ge, Mn, Pb, etc.; Pn = Sb or Bi; Ch = Te, Se) have recently been reported to host a vast landscape of topological phases of matter, including the quantum anomalous Hall state and topological axion state with quantized magnetoelectric effect. A subgroup in this series, like MnSb4Te7 and GeSb4Te7, can be driven to a superconducting state by applying a physical pressure, making them viable candidates to realize so-called topological superconductivity. However, the role of magnetic fluctuations in this pressure-induced superconductivity remains unclear. Here, we report the pressure-induced multiple superconducting phases in the nonmagnetic GeBi4Te7, accompanied by corresponding structural transitions evidenced from the high-pressure Raman scattering. In comparison with other members in this family, we find the superconducting transition temperature of the nonmagnetic subgroup is significantly higher than their magnetic homologues, possibly hinting at the detrimental role played by the magnetic fluctuations in the superconductivity formation, at least in this pseudo-binary chalcogenide family.
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Submitted 5 March, 2025;
originally announced March 2025.
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Abnormal Normal State and Pressure-driven Reentrant Superconductivity in the Heavy $d$-electron Superconductor Rh$_{17}$S$_{15}$
Authors:
Xiaofeng Xu,
J. Y. Nie,
C. Q. Xu,
Z. M. Zhu,
Xiangzhuo Xing,
Y. L. Huang,
C. T. Zhang,
N. Zuo,
C. C. Zhao,
Z. Y. Zhang,
W. Zhou,
W. H. Jiao,
S. Xu,
Q. Zhang,
Zhu-An Xu,
X. B. Liu,
Dong Qian,
Shiyan Li
Abstract:
Superconductivity beyond the conventional Bardeen-Cooper-Schrieffer (BCS) framework often emerges out of a normal state that is accompanied by exotic magnetism and thereby displays many exceptional transport and thermodynamic properties. Here we report that the normal state of the heavy $d$-electron superconductor Rh$_{17}$S$_{15}$ is characterized by a weak \textit{ferromagnetism} that persists u…
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Superconductivity beyond the conventional Bardeen-Cooper-Schrieffer (BCS) framework often emerges out of a normal state that is accompanied by exotic magnetism and thereby displays many exceptional transport and thermodynamic properties. Here we report that the normal state of the heavy $d$-electron superconductor Rh$_{17}$S$_{15}$ is characterized by a weak \textit{ferromagnetism} that persists up to room temperature. We show that the broad hump in its resistivity likely results from the Kondo interaction of the conduction electrons with this novel magnetism. By applying pressure, superconductivity is fully suppressed first. In the high-pressure regime, however, we observe a second dome of superconductivity with its maximum $T_c$ greater than the ambient pressure value, highlighting the possible \textit{unconventional} superconductivity in this heavy $d$-electron sulfide.
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Submitted 17 February, 2025;
originally announced February 2025.
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WyckoffDiff -- A Generative Diffusion Model for Crystal Symmetry
Authors:
Filip Ekström Kelvinius,
Oskar B. Andersson,
Abhijith S. Parackal,
Dong Qian,
Rickard Armiento,
Fredrik Lindsten
Abstract:
Crystalline materials often exhibit a high level of symmetry. However, most generative models do not account for symmetry, but rather model each atom without any constraints on its position or element. We propose a generative model, Wyckoff Diffusion (WyckoffDiff), which generates symmetry-based descriptions of crystals. This is enabled by considering a crystal structure representation that encode…
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Crystalline materials often exhibit a high level of symmetry. However, most generative models do not account for symmetry, but rather model each atom without any constraints on its position or element. We propose a generative model, Wyckoff Diffusion (WyckoffDiff), which generates symmetry-based descriptions of crystals. This is enabled by considering a crystal structure representation that encodes all symmetry, and we design a novel neural network architecture which enables using this representation inside a discrete generative model framework. In addition to respecting symmetry by construction, the discrete nature of our model enables fast generation. We additionally present a new metric, Fréchet Wrenformer Distance, which captures the symmetry aspects of the materials generated, and we benchmark WyckoffDiff against recently proposed generative models for crystal generation. As a proof-of-concept study, we use WyckoffDiff to find new materials below the convex hull of thermodynamical stability.
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Submitted 10 October, 2025; v1 submitted 10 February, 2025;
originally announced February 2025.
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Identification of metastable lattice distortion free charge density wave at photoinduced interface via TRARPES
Authors:
Shaofeng Duan,
Binshuo Zhang,
Zihao Wang,
Shichong Wang,
Lingxiao Gu,
Haoran Liu,
Jiongyu Huang,
Jianzhe Liu,
Dong Qian,
Yanfeng Guo,
Wentao Zhang
Abstract:
The interplay between different degrees of freedom governs the emergence of correlated electronic states in quantum materials, with charge density waves (CDW) often coexisting with other exotic phases. Under thermal equilibrium, traditional CDW states are consequentially accompanied by structural phase transitions. In contrast, ultrafast photoexcitation allows access to exotic states where a singl…
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The interplay between different degrees of freedom governs the emergence of correlated electronic states in quantum materials, with charge density waves (CDW) often coexisting with other exotic phases. Under thermal equilibrium, traditional CDW states are consequentially accompanied by structural phase transitions. In contrast, ultrafast photoexcitation allows access to exotic states where a single degree of freedom dominates in the time domain, enabling the study of underlying physics without interference. Here, we report the realization of a long-lived metastable CDW state without lattice distortion at the photoinduced interfaces in GdTe3 using time- and angle-resolved photoemission spectroscopy. After optical excitation above the CDW melting threshold, we identified emerged metastable interfaces through inverting the CDW-coupled lattice distortions, with lifetimes on the order of 10 picoseconds. These photoinduced interfaces represent a novel CDW state lacking the usual amplitude mode and lattice distortions, allowing quantification of the dominant role of electronic instabilities in CDW order. This work provides a new approach to disentangling electronic instabilities from electron-phonon coupling using a nonequilibrium method.
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Submitted 10 February, 2025;
originally announced February 2025.
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Intrinsic Quantum Mpemba Effect in Markovian Systems and Quantum Circuits
Authors:
Dongheng Qian,
Huan Wang,
Jing Wang
Abstract:
The quantum Mpemba effect (QME) describes the counterintuitive phenomenon in which a system farther from equilibrium reaches steady state faster than one closer to equilibrium. However, ambiguity in defining a suitable distance measure between quantum states has led to varied interpretations across different contexts. Here we propose the intrinsic quantum Mpemba effect (IQME), defined using the tr…
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The quantum Mpemba effect (QME) describes the counterintuitive phenomenon in which a system farther from equilibrium reaches steady state faster than one closer to equilibrium. However, ambiguity in defining a suitable distance measure between quantum states has led to varied interpretations across different contexts. Here we propose the intrinsic quantum Mpemba effect (IQME), defined using the trajectory length traced by the quantum state as a more appropriate measure of distance--distinct from previous trajectory-independent metrics. By treating quantum states as points in a Riemannian space defined by statistical distance, the trajectory length emerges as a more natural and accurate characterization of the counterintuitive dynamics, drawing an analogy to the classical Brachistochrone problem. We demonstrate the existence of IQME in Markovian systems and extend its definition to quantum circuits, thereby establishing a unified framework applicable to both open and closed systems. Notably, we observe an IQME in a $U(1)$-symmetric circuit, offering new insights into the rates of quantum thermalization for different initial states. This work deepens our understanding of quantum state evolution and lays the foundation for accurately capturing novel quantum dynamical behaviour.
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Submitted 23 June, 2025; v1 submitted 27 November, 2024;
originally announced November 2024.
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Coherent Information Phase Transition in a Noisy Quantum Circuit
Authors:
Dongheng Qian,
Jing Wang
Abstract:
Coherent information quantifies the transmittable quantum information through a channel and is directly linked to the channel's quantum capacity. In a monitored quantum circuit, regarded as a quantum channel, extensive and positive coherent information is sustained at low measurement rates, protected by the scrambling dynamics. However, noise suppresses coherent information, driving it to zero or…
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Coherent information quantifies the transmittable quantum information through a channel and is directly linked to the channel's quantum capacity. In a monitored quantum circuit, regarded as a quantum channel, extensive and positive coherent information is sustained at low measurement rates, protected by the scrambling dynamics. However, noise suppresses coherent information, driving it to zero or negative values. Here, we show that incorporating quantum-enhanced operations facilitates reliable quantum information transmission even in the presence of noise, as evidenced by a phase transition in coherent information from a recoverable phase with positive values to an irrecoverable phase with negative values. We provide both analytical understanding and numerical evidence demonstrating this transition, which is modulated by the relative frequencies of noise and quantum-enhanced operations. Additionally, we propose a resource-efficient protocol to characterize this phase transition in experiments, effectively avoiding post-selection by utilizing every run of the quantum circuit. This approach bridges the gap between theoretical insights and practical implementation, making the phase transition feasible to demonstrate on realistic noisy intermediate-scale quantum devices.
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Submitted 21 October, 2025; v1 submitted 29 August, 2024;
originally announced August 2024.
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Protect Measurement-Induced Phase Transition from Noise
Authors:
Dongheng Qian,
Jing Wang
Abstract:
Scrambling dynamics induced by random unitary gates can protect information from low-rate measurements, which underpins the phenomenon known as the measurement-induced phase transition (MIPT). However, typical decoherence noises disrupts the volume law phase, complicating the observation of MIPT on noisy intermediate-scale quantum devices. Here, we demonstrate that incorporating quantum-enhanced o…
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Scrambling dynamics induced by random unitary gates can protect information from low-rate measurements, which underpins the phenomenon known as the measurement-induced phase transition (MIPT). However, typical decoherence noises disrupts the volume law phase, complicating the observation of MIPT on noisy intermediate-scale quantum devices. Here, we demonstrate that incorporating quantum-enhanced operations can effectively protect MIPT from environmental noise, thereby enabling its detection in experiment. The transition is characterized by the conditional entanglement entropy (CEE), which is associated with a statistical mechanics model wherein noise and quantum-enhanced operations act as competing external random fields. When the net external field is zero, a ferromagnetic-paramagnetic phase transition is expected, resulting in the MIPT. This zero-field condition also ensures an average apparatus-environment symmetry, making CEE a valid probe of entanglement and establishing the transition as a genuine entanglement phase transition. Additionally, we provide numerical results demonstrate the MIPT in a (2+1)-dimensional quantum circuit under dephasing noise. We also propose a method to estimate the noise rate, enabling the zero-field condition to be achieved experimentally and ensuring the feasibility of our protocol. Our result serves as a concrete example of the power of quantum enhancement in combating noise.
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Submitted 18 December, 2024; v1 submitted 20 June, 2024;
originally announced June 2024.
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Interplay between topology and correlations in the second moiré band of twisted bilayer MoTe2
Authors:
Fan Xu,
Xumin Chang,
Jiayong Xiao,
Yixin Zhang,
Feng Liu,
Zheng Sun,
Ning Mao,
Nikolai Peshcherenko,
Jiayi Li,
Kenji Watanabe,
Takashi Taniguchi,
Bingbing Tong,
Li Lu,
Jinfeng Jia,
Dong Qian,
Zhiwen Shi,
Yang Zhang,
Xiaoxue Liu,
Shengwei Jiang,
Tingxin Li
Abstract:
Topological flat bands formed in two-dimensional lattice systems offer unique opportunity to study the fractional phases of matter in the absence of an external magnetic field. Celebrated examples include fractional quantum anomalous Hall (FQAH) effects and fractional topological insulators. Recently, FQAH effects have been experimentally realized in both the twisted bilayer MoTe2 (tMoTe2) system…
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Topological flat bands formed in two-dimensional lattice systems offer unique opportunity to study the fractional phases of matter in the absence of an external magnetic field. Celebrated examples include fractional quantum anomalous Hall (FQAH) effects and fractional topological insulators. Recently, FQAH effects have been experimentally realized in both the twisted bilayer MoTe2 (tMoTe2) system and the rhombohedral stacked multilayer graphene/hBN moiré systems. To date, experimental studies mainly focus on the first moiré flat band, except a very recent work that studied novel transport properties in higher moiré bands of a 2.1° tMoTe2 device. Here, we present the systematical transport study of approximately 3° tMoTe2 devices, especially for the second moiré band. At ν = -2 and -4, time-reversal-symmetric single and double quantum spin Hall states formed, consistent with the previous observation in 2.1° tMoTe2 device. On the other hand, we observed ferromagnetism in the second moiré band, and a Chern insulator state driven by out-of-plane magnetic fields at ν = -3. At ν = -2.2 to -2.7, finite temperature resistivity minimum with 1/T scaling at low temperatures, and large out-of-plane negative magnetoresistance have been observed. Applying out-of-plane electric field can induce quantum phase transitions at both integer and fractional filling factors. Our studies pave the way for realizing tunable topological states and other unexpected magnetic phases beyond the first moiré flat band based on twisted MoTe2 platform.
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Submitted 3 December, 2024; v1 submitted 13 June, 2024;
originally announced June 2024.
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Predicting Many Crystal Properties via an Adaptive Transformer-based Framework
Authors:
Haosheng Xu,
Dongheng Qian,
Jing Wang
Abstract:
Machine learning has revolutionized many fields, including materials science. However, predicting properties of crystalline materials using machine learning faces challenges in input encoding, output versatility, and interpretability. We introduce CrystalBERT, an adaptable transformer-based framework integrating space group, elemental, and unit cell information. This novel structure can seamlessly…
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Machine learning has revolutionized many fields, including materials science. However, predicting properties of crystalline materials using machine learning faces challenges in input encoding, output versatility, and interpretability. We introduce CrystalBERT, an adaptable transformer-based framework integrating space group, elemental, and unit cell information. This novel structure can seamlessly combine diverse features and accurately predict various physical properties, including topological properties, superconducting transition temperatures, dielectric constants, and more. CrystalBERT provides insightful interpretations of features influencing target properties. Our results indicate that space group and elemental information are crucial for predicting topological and superconducting properties, underscoring their intricate nature. By incorporating these features, we achieve 91\% accuracy in topological classification, surpassing prior studies and identifying previously misclassified materials. This research demonstrates that integrating diverse material information enhances the prediction of complex material properties, paving the way for more accurate and interpretable machine learning models in materials science.
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Submitted 13 December, 2024; v1 submitted 29 May, 2024;
originally announced May 2024.
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Optical manipulation of the topological phase in ZrTe5 revealed by time- and angle-resolved photoemission
Authors:
Chaozhi Huang,
Chengyang Xu,
Fengfeng Zhu,
Shaofeng Duan,
Jianzhe Liu,
Lingxiao Gu,
Shichong Wang,
Haoran Liu,
Dong Qian,
Weidong Luo,
Wentao Zhang
Abstract:
High-resolution time- and angle-resolved photoemission measurements were conducted on the topological insulator ZrTe5. With strong femtosecond photoexcitation, a possible ultrafast phase transition from a weak to a strong topological insulating phase was experimentally realized by recovering the energy gap inversion in a time scale that was shorter than 0.15 ps. This photoinduced transient strong…
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High-resolution time- and angle-resolved photoemission measurements were conducted on the topological insulator ZrTe5. With strong femtosecond photoexcitation, a possible ultrafast phase transition from a weak to a strong topological insulating phase was experimentally realized by recovering the energy gap inversion in a time scale that was shorter than 0.15 ps. This photoinduced transient strong topological phase can last longer than 2 ps at the highest excitation fluence studied, and it cannot be attributed to the photoinduced heating of electrons or modification of the conduction band filling. Additionally, the measured unoccupied electronic states are consistent with the first-principles calculation based on experimental crystal lattice constants, which favor a strong topological insulating phase. These findings provide new insights into the longstanding controversy about the strong and weak topological properties in ZrTe5, and they suggest that many-body effects including electron-electron interactions must be taken into account to understand the equilibrium weak topological insulating phase in ZrTe5.
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Submitted 18 March, 2024;
originally announced March 2024.
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Observation of quantum oscillations near the Mott-Ioffe-Regel limit in CaAs3
Authors:
Yuxiang Wang,
Minhao Zhao,
Jinglei Zhang,
Wenbin Wu,
Shichao Li,
Yong Zhang,
Wenxiang Jiang,
Nesta Benno Joseph,
Liangcai Xu,
Yicheng Mou,
Yunkun Yang,
Pengliang Leng,
Yong Zhang,
Li Pi,
Alexey Suslov,
Mykhaylo Ozerov,
Jan Wyzula,
Milan Orlita,
Fengfeng Zhu,
Yi Zhang,
Xufeng Kou,
Zengwei Zhu,
Awadhesh Narayan,
Dong Qian,
Jinsheng Wen
, et al. (3 additional authors not shown)
Abstract:
The Mott-Ioffe-Regel limit sets the lower bound of carrier mean free path for coherent quasiparticle transport. Metallicity beyond this limit is of great interest because it is often closely related to quantum criticality and unconventional superconductivity. Progress along this direction mainly focuses on the strange-metal behaviors originating from the evolution of quasiparticle scattering rate…
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The Mott-Ioffe-Regel limit sets the lower bound of carrier mean free path for coherent quasiparticle transport. Metallicity beyond this limit is of great interest because it is often closely related to quantum criticality and unconventional superconductivity. Progress along this direction mainly focuses on the strange-metal behaviors originating from the evolution of quasiparticle scattering rate such as linear-in-temperature resistivity, while the quasiparticle coherence phenomena in this regime are much less explored due to the short mean free path at the diffusive bound. Here we report the observation of quantum oscillations from Landau quantization near the Mott-Ioffe-Regel limit in CaAs3. Despite the insulator-like temperature dependence of resistivity, CaAs3 presents giant magnetoresistance and prominent Shubnikov-de Haas oscillations from Fermi surfaces, indicating highly coherent band transport. In contrast, the quantum oscillation is absent in the magnetic torque. The quasiparticle effective mass increases systematically with magnetic fields, manifesting a much larger value than the expectation given by magneto-infrared spectroscopy. It suggests a strong many-body renormalization effect near Fermi surface. We find that these unconventional behaviors may be explained by the interplay between the mobility edge and the van Hove singularity, which results in the formation of coherent cyclotron orbits emerging at the diffusive bound. Our results call for further study on the electron correlation effect of the van Hove singularity.
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Submitted 14 March, 2024;
originally announced March 2024.
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Massive topological edge channels in three-dimensional topological materials induced by extreme surface anisotropy
Authors:
Fengfeng Zhu,
Chenqiang Hua,
Xiao Wang,
Lin Miao,
Yixi Su,
Makoto Hashimoto,
Donghui Lu,
Zhi-Xun Shen,
Jin-Feng Jia,
Yunhao Lu,
Dandan Guan,
Dong Qian
Abstract:
A two-dimensional quantum spin Hall insulator exhibits one-dimensional gapless spin-filtered edge channels allowing for dissipationless transport of charge and spin. However, the sophisticated fabrication requirement of two-dimensional materials and the low capacity of one-dimensional channels hinder the broadening applications. We introduce a method to manipulate a three-dimensional topological m…
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A two-dimensional quantum spin Hall insulator exhibits one-dimensional gapless spin-filtered edge channels allowing for dissipationless transport of charge and spin. However, the sophisticated fabrication requirement of two-dimensional materials and the low capacity of one-dimensional channels hinder the broadening applications. We introduce a method to manipulate a three-dimensional topological material to host a large number of one-dimensional topological edge channels utilizing surface anisotropy. Taking ZrTe5 as a model system, we realize a highly anisotropic surface due to the synergistic effect of the lattice geometry and Coulomb interaction, and achieve massive one-dimensional topological edge channels -- confirmed by electronic characterization using angle-resolved photoemission spectroscopy, in combination with first-principles calculations. Our work provides a new avenue to engineer the topological properties of three-dimensional materials through nanoscale tunning of surface morphology and opens up a promising prospect for the development of low-power-consumption electronic nano devices based on one-dimensional topological edge channels.
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Submitted 23 November, 2023;
originally announced November 2023.
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Steering-induced phase transition in measurement-only quantum circuits
Authors:
Dongheng Qian,
Jing Wang
Abstract:
Competing measurements alone can give rise to distinct phases characterized by entanglement entropy$\unicode{x2013}$such as the volume law phase, symmetry-breaking (SB) phase, and symmetry-protected topological (SPT) phase$\unicode{x2013}$that can only be discerned through quantum trajectories, making them challenging to observe experimentally. In another burgeoning area of research, recent studie…
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Competing measurements alone can give rise to distinct phases characterized by entanglement entropy$\unicode{x2013}$such as the volume law phase, symmetry-breaking (SB) phase, and symmetry-protected topological (SPT) phase$\unicode{x2013}$that can only be discerned through quantum trajectories, making them challenging to observe experimentally. In another burgeoning area of research, recent studies have demonstrated that steering can give rise to additional phases within quantum circuits. In this work, we show that new phases can appear in measurement-only quantum circuit with steering. Unlike conventional steering methods that rely solely on local information, the steering scheme we introduce requires the circuit's structure as an additional input. These steering induced phases are termed as "informative" phases. They are distinguished by the intrinsic dimension of the bitstrings measured in each circuit run, making them substantially easier to detect in experimental setups. We explicitly show this phase transition by numerical simulation in three circuit models that are previously well-studied: projective transverse field Ising model, lattice gauge-Higgs model and XZZX model. When the informative phase coincides with the SB phase, our steering mechanism effectively serves as a "pre-selection" routine, making the SB phase more experimentally accessible. Additionally, an intermediate phase may manifest, where a discrepancy arises between the quantum information captured by entanglement entropy and the classical information conveyed by bitstrings. Our findings demonstrate that steering not only adds theoretical richness but also offers practical advantages in the study of measurement-only quantum circuits.
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Submitted 7 December, 2023; v1 submitted 3 September, 2023;
originally announced September 2023.
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Versatile Method of Engineering the Band Alignment and the Electron Wavefunction Hybridization of Hybrid Quantum Devices
Authors:
Guoan Li,
Xiaofan Shi,
Ting Lin,
Guang Yang,
Marco Rossi,
Ghada Badawy,
Zhiyuan Zhang,
Jiayu Shi,
Degui Qian,
Fang Lu,
Lin Gu,
An-Qi Wang,
Bingbing Tong,
Peiling Li,
Zhaozheng Lyu,
Guangtong Liu,
Fanming Qu,
Ziwei Dou,
Dong Pan,
Jianhua Zhao,
Qinghua Zhang,
Erik P. A. M. Bakkers,
Michał P. Nowak,
Paweł Wójcik,
Li Lu
, et al. (1 additional authors not shown)
Abstract:
With the development of quantum technology, hybrid devices that combine superconductors (S) and semiconductors (Sm) have attracted great attention due to the possibility of engineering structures that benefit from the integration of the properties of both materials. However, until now, none of the experiments have reported good control of band alignment at the interface, which determines the stren…
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With the development of quantum technology, hybrid devices that combine superconductors (S) and semiconductors (Sm) have attracted great attention due to the possibility of engineering structures that benefit from the integration of the properties of both materials. However, until now, none of the experiments have reported good control of band alignment at the interface, which determines the strength of S-Sm coupling and the proximitized superconducting gap. Here, we fabricate hybrid devices in a generic way with argon milling to modify the interface while maintaining its high quality. First, after the milling the atomically connected S-Sm interfaces appear, resulting in a large induced gap, as well as the ballistic transport revealed by the multiple Andreev reflections and quantized above-gap conductance plateaus. Second, by comparing transport measurement with Schrödinger-Poisson (SP) calculations, we demonstrate that argon milling is capable of varying the band bending strength in the semiconducting wire as the electrons tend to accumulate on the etched surface for longer milling time. Finally, we perform nonlocal measurements on advanced devices to demonstrate the coexistence and tunability of crossed Andreev reflection (CAR) and elastic co-tunneling (ECT) -- key ingredients for building the prototype setup for realization of Kitaev chain and quantum entanglement probing. Such a versatile method, compatible with the standard fabrication process and accompanied by the well-controlled modification of the interface, will definitely boost the creation of more sophisticated hybrid devices for exploring physics in solid-state systems.
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Submitted 24 July, 2024; v1 submitted 13 July, 2023;
originally announced July 2023.
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Ultrafast Switching from the Charge Density Wave Phase to a Metastable Metallic State in 1T-TiSe$_2$
Authors:
Shaofeng Duan,
Wei Xia,
Chaozhi Huang,
Shichong Wang,
Lingxiao Gu,
Haoran Liu,
Dao Xiang,
Dong Qian,
Yanfeng Guo,
Wentao Zhang
Abstract:
The ultrafast electronic structures of the charge density wave material 1T-TiSe$_2$ were investigated by high-resolution time- and angle-resolved photoemission spectroscopy. We found that the quasiparticle populations drove ultrafast electronic phase transitions in 1T-TiSe$_2$ within 100 fs after photoexcitation, and a metastable metallic state, which was significantly different from the equilibri…
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The ultrafast electronic structures of the charge density wave material 1T-TiSe$_2$ were investigated by high-resolution time- and angle-resolved photoemission spectroscopy. We found that the quasiparticle populations drove ultrafast electronic phase transitions in 1T-TiSe$_2$ within 100 fs after photoexcitation, and a metastable metallic state, which was significantly different from the equilibrium normal phase, was evidenced far below the charge density wave transition temperature. Detailed time- and pump-fluence-dependent experiments revealed that the photoinduced metastable metallic state was a result of the halted motion of the atoms through the coherent electron-phonon coupling process, and the lifetime of this state was prolonged to picoseconds with the highest pump fluence used in this study. Ultrafast electronic dynamics were well captured by the time-dependent Ginzburg-Landau model. Our work demonstrates a mechanism for realizing novel electronic states by photoinducing coherent motion of atoms in the lattice.
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Submitted 31 May, 2023;
originally announced June 2023.
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A robust and tunable Luttinger liquid in correlated edge of transition-metal second-order topological insulator Ta$_2$Pd$_3$Te$_5$
Authors:
Anqi Wang,
Yupeng Li,
Guang Yang,
Dayu Yan,
Yuan Huang,
Zhaopeng Guo,
Jiacheng Gao,
Jierui Huang,
Qiaochu Zeng,
Degui Qian,
Hao Wang,
Xingchen Guo,
Fanqi Meng,
Qinghua Zhang,
Lin Gu,
Xingjiang Zhou,
Guangtong Liu,
Fanming Qu,
Tian Qian,
Youguo Shi,
Zhijun Wang,
Li Lu,
Jie Shen
Abstract:
The interplay between topology and interaction always plays an important role in condensed matter physics and induces many exotic quantum phases, while rare transition metal layered material (TMLM) has been proved to possess both. Here we report a TMLM Ta$_2$Pd$_3$Te$_5$ has the two-dimensional second-order topology (also a quadrupole topological insulator) with correlated edge states - Luttinger…
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The interplay between topology and interaction always plays an important role in condensed matter physics and induces many exotic quantum phases, while rare transition metal layered material (TMLM) has been proved to possess both. Here we report a TMLM Ta$_2$Pd$_3$Te$_5$ has the two-dimensional second-order topology (also a quadrupole topological insulator) with correlated edge states - Luttinger liquid. It is ascribed to the unconventional nature of the mismatch between charge- and atomic- centers induced by a remarkable double-band inversion. This one-dimensional protected edge state preserves the Luttinger liquid behavior with robustness and universality in scale from micro- to macro- size, leading to a significant anisotropic electrical transport through two-dimensional sides of bulk materials. Moreover, the bulk gap can be modulated by the thickness, resulting in an extensive-range phase diagram for Luttinger liquid. These provide an attractive model to study the interaction and quantum phases in correlated topological systems.
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Submitted 1 May, 2024; v1 submitted 12 October, 2022;
originally announced October 2022.
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Multiscale reduced-order modeling of fused filament fabricated composites
Authors:
Satyajit Mojumder,
Anton van Beek,
Zahabul Islam,
Dong Qian,
Wing Kam Liu
Abstract:
Defects such as voids are observed at multiple length scales of an additively manufactured composite material. Modeling such defects and their multiscale interaction is crucial for the materials performance prediction. In this work, we study as-built defects in fused filament fabricated Polycarbonate/Short Carbon Fiber (PC/SCF) composite samples. The microscale and mesoscale voids along with the m…
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Defects such as voids are observed at multiple length scales of an additively manufactured composite material. Modeling such defects and their multiscale interaction is crucial for the materials performance prediction. In this work, we study as-built defects in fused filament fabricated Polycarbonate/Short Carbon Fiber (PC/SCF) composite samples. The microscale and mesoscale voids along with the mesoscale layer orientations have been studied using a mechanistic reduced-order model. Our result indicates that the microscale intrabead voids interact with the mesoscale interbead voids and significantly degrade the mechanical response of the printed composites compared to the microscale microstructure without voids. The mesoscale layer orientations also influence the stress-strain response and show better performance when the load is applied to the bead direction. The efficient reduced-order modeling approach used in this work provides a way to evaluate multiscale design aspects of additively manufactured composite materials.
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Submitted 6 September, 2022;
originally announced September 2022.
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Field driven cluster formation in two-dimensional colloidal binary mixtures
Authors:
Dingwen Qian,
Monica Olvera de la Cruz
Abstract:
We study size- and charge-asymmetric oppositely charged colloids driven by an external electric field. The large particles are connected by harmonic springs, forming a hexagonal-lattice network while the small particles are free of bonds and exhibit fluid-like motion. We show that this model exhibits a cluster formation pattern when the external driving force exceeds a critical value. The clusteri…
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We study size- and charge-asymmetric oppositely charged colloids driven by an external electric field. The large particles are connected by harmonic springs, forming a hexagonal-lattice network while the small particles are free of bonds and exhibit fluid-like motion. We show that this model exhibits a cluster formation pattern when the external driving force exceeds a critical value. The clustering is accompanied with stable wavepackets in vibrational motions of the large particles.
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Submitted 6 April, 2023; v1 submitted 8 July, 2022;
originally announced July 2022.
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Anomalous contribution to the nematic electronic states from the structural transition in FeSe revealed by time- and angle-resolved photoemission spectroscopy
Authors:
Yuanyuan Yang,
Qisi Wang,
Shaofeng Duan,
Hongliang Wo,
Chaozhi Huang,
Shichong Wang,
Lingxiao Gu,
Dao Xiang,
Dong Qian,
Jun Zhao,
Wentao Zhang
Abstract:
High-resolution time- and angle-resolved photoemission measurements were made on FeSe superconductors. With ultrafast photoexcitation, two critical excitation fluences that correspond to two ultrafast electronic phase transitions were found only in the $d_{yz}$-orbit-derived band near the Brillouin-zone center within our time and energy resolution. Upon comparison to the detailed temperature depen…
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High-resolution time- and angle-resolved photoemission measurements were made on FeSe superconductors. With ultrafast photoexcitation, two critical excitation fluences that correspond to two ultrafast electronic phase transitions were found only in the $d_{yz}$-orbit-derived band near the Brillouin-zone center within our time and energy resolution. Upon comparison to the detailed temperature dependent measurements, we conclude that there are two equilibrium electronic phase transitions (at approximately 90 and 120 K) above the superconducting transition temperature, and an anomalous contribution on the scale of 10 meV to the nematic states from the structural transition is experimentally determined. Our observations strongly suggest that the electronic phase transition at 120 K must be taken into account in the energy band development of FeSe, and, furthermore, the contribution of the structural transition plays an important role in the nematic phase of iron-based high-temperature superconductors.
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Submitted 14 June, 2022;
originally announced June 2022.
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de Haas-van Alphen effect and the first-principles study of the possible topological stannide Cu$_3$Sn
Authors:
Chengxu Liu,
Bin Li,
Yongheng Ge,
Wen-He Jiao,
Chuanying Xi,
Yi Liu,
Chunqiang Xu,
Qi Lu,
Yunlong Li,
Hang-Qiang Qiu,
Qin-Qing Zhu,
Zhi Ren,
Ziming Zhu,
Dong Qian,
Xianglin Ke,
Xiaofeng Xu
Abstract:
The quest for quantum materials with diverse symmetry-protected topological states has been the focus of recent research interest, primarily due to their fascinating physical properties and the potential technological utility. In this work, we report on the magnetotransport, de Haas-van Alphen (dHvA) oscillations, and the first-principles calculations of the stannide Cu$_3$Sn that is isostructural…
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The quest for quantum materials with diverse symmetry-protected topological states has been the focus of recent research interest, primarily due to their fascinating physical properties and the potential technological utility. In this work, we report on the magnetotransport, de Haas-van Alphen (dHvA) oscillations, and the first-principles calculations of the stannide Cu$_3$Sn that is isostructural with the recently reported topological semimetal Ag$_3$Sn. The magnetoresistance was found to vary quasi-linearly in field. Clear dHvA oscillations were observed under a field as low as 1 Tesla at 2 K, with three major oscillation frequencies $F_α$=8.74 T, $F_β$=150.19 T and $F_γ$=229.66 T and extremely small effective masses. The analysis of dHvA quantum oscillations revealed a possible nonzero Berry phase, suggestive of the nontrivial band topology. The corroborating evidence for the nontrivial electronic topology also comes from the first-principles calculations which yield a nonzero $\mathbb{Z}_2$ topological index. These results collectively suggest that Cu$_3$Sn, in analogy to its homologue Ag$_3$Sn, may be another intermetallic stannide hosting topological Dirac fermions.
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Submitted 9 May, 2022;
originally announced May 2022.
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Unusual band splitting and superconducting gap evolution with sulfur substitution in FeSe
Authors:
Yuanyuan Yang,
Qisi Wang,
Shaofeng Duan,
Hongliang Wo,
Chaozhi Huang,
Shichong Wang,
Lingxiao Gu,
Dong Qian,
Jun Zhao,
Wentao Zhang
Abstract:
High-resolution angle-resolved photoemission measurements were taken on FeSe$_{1-x}$S$_x$ (x=0, 0.04, and 0.08) superconductors. With an ultrahigh energy resolution of 0.4 meV, unusual two hole bands near the Brillouin-zone center, which was possibly a result of additional symmetry breaking, were identified in all the sulfur-substituted samples. In addition, in both of the hole bands highly anisot…
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High-resolution angle-resolved photoemission measurements were taken on FeSe$_{1-x}$S$_x$ (x=0, 0.04, and 0.08) superconductors. With an ultrahigh energy resolution of 0.4 meV, unusual two hole bands near the Brillouin-zone center, which was possibly a result of additional symmetry breaking, were identified in all the sulfur-substituted samples. In addition, in both of the hole bands highly anisotropic superconducting gaps with resolution limited nodes were evidenced. We find that the larger superconducting gap on the outer hole band is reduced linearly to the nematic transition temperature while the gap on the inner hole is nearly S-substitution independent. Our observations strongly suggest that the superconducting gap increases with enhanced nematicity although the superconducting transition temperature is not only governed by the pairing strength, demonstrating strong constraints on theories in the FeSe family.
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Submitted 21 April, 2022; v1 submitted 18 April, 2022;
originally announced April 2022.
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Transient dynamics of the phase transition in VO2 revealed by mega electron-volt ultrafast electron diffraction
Authors:
Chenhang Xu,
Cheng Jin,
Zijing Chen,
Qi Lu,
Yun Cheng,
Bo Zhang,
Fengfeng Qi,
Jiajun Chen,
Xunqing Yin,
Guohua Wang,
Dao Xiang,
Dong Qian
Abstract:
Vanadium dioxide (VO2) exhibits an insulator-to-metal transition accompanied by a structural transition near room temperature. This transition can be triggered by an ultrafast laser pulse. Exotic transient states, such as a metallic state without structural transition, were also proposed. These unique characteristics let VO2 have great potential in thermal switchable devices and photonic applicati…
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Vanadium dioxide (VO2) exhibits an insulator-to-metal transition accompanied by a structural transition near room temperature. This transition can be triggered by an ultrafast laser pulse. Exotic transient states, such as a metallic state without structural transition, were also proposed. These unique characteristics let VO2 have great potential in thermal switchable devices and photonic applications. Although great efforts have been made, the atomic pathway during the photoinduced phase transition is still not clear. Here, we synthesized freestanding quasi-single-crystal VO2 films and examined their photoinduced structural phase transition with mega-electron-volt ultrafast electron diffraction. Leveraging the high signal-to-noise ratio and high temporal resolution, we observe that the disappearance of vanadium dimers and zigzag chains does not coincide with the transformation of crystal symmetry. After photoexcitation, the initial structure is strongly modified within 200 femtoseconds, resulting in a transient monoclinic structure without vanadium dimers and zigzag chains. Then, it continues to evolve to the final tetragonal structure in approximately 5 picoseconds. In addition, only one laser fluence threshold instead of two thresholds suggested in polycrystalline samples was observed in our quasi-single-crystal samples. Our findings provide new essential information for a comprehensive understanding of the photoinduced ultrafast phase transition in VO2.
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Submitted 23 November, 2023; v1 submitted 18 March, 2022;
originally announced March 2022.
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Light-induced dimension crossover in 1T-TiSe$_2$ dictated by excitonic correlations
Authors:
Yun Cheng,
Alfred Zong,
Jun Li,
Wei Xia,
Shaofeng Duan,
Wenxuan Zhao,
Yidian Li,
Fengfeng Qi,
Jun Wu,
Lingrong Zhao,
Pengfei Zhu,
Xiao Zou,
Tao Jiang,
Yanfeng Guo,
Lexian Yang,
Dong Qian,
Wentao Zhang,
Anshul Kogar,
Michael W. Zuerch,
Dao Xiang,
Jie Zhang
Abstract:
In low-dimensional systems with strong electronic correlations, the application of an ultrashort laser pulse often yields novel phases that are otherwise inaccessible. The central challenge in understanding such phenomena is to determine how dimensionality and many-body correlations together govern the pathway of a non-adiabatic transition. To this end, we examine a layered compound, 1T-TiSe$_2$,…
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In low-dimensional systems with strong electronic correlations, the application of an ultrashort laser pulse often yields novel phases that are otherwise inaccessible. The central challenge in understanding such phenomena is to determine how dimensionality and many-body correlations together govern the pathway of a non-adiabatic transition. To this end, we examine a layered compound, 1T-TiSe$_2$, whose three-dimensional charge-density-wave (3D CDW) state also features exciton condensation due to strong electron-hole interactions. We find that photoexcitation suppresses the equilibrium 3D CDW while creating a nonequilibrium 2D CDW. Remarkably, the dimension reduction does not occur unless bound electron-hole pairs are broken. This relation suggests that excitonic correlations maintain the out-of-plane CDW coherence, settling a long-standing debate over their role in the CDW transition. Our findings demonstrate how optical manipulation of electronic interaction enables one to control the dimensionality of a broken-symmetry order, paving the way for realizing other emergent states in strongly correlated systems.
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Submitted 19 February, 2022;
originally announced February 2022.
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Disorder-induced linear magnetoresistance in Sr-doped Bi2Se3 thin films
Authors:
Jiayuan Hu,
Wenxiang Jiang,
Guohua Wang,
Yunlong Li,
Jiangtao Wang,
Jinlong Jiao,
Qi Lu,
Chenhang Xu,
Wentao Zhang,
Jie Ma,
Dong Qian
Abstract:
Sr-doped Bi2Se3 thin films was known as a potential candidate of topological superconductor. The magnetoresistance (MR) of SrxBi2Se3 films with various doping concentrations x were found to be dominated by weak antilocalization (WAL) at low magnetic fields, whereas the classical MR, which originally dominated the MR, was almost completely suppressed. In contrast, the MR of all samples has been obs…
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Sr-doped Bi2Se3 thin films was known as a potential candidate of topological superconductor. The magnetoresistance (MR) of SrxBi2Se3 films with various doping concentrations x were found to be dominated by weak antilocalization (WAL) at low magnetic fields, whereas the classical MR, which originally dominated the MR, was almost completely suppressed. In contrast, the MR of all samples has been observed to be dominated by linear magnetoresistance (LMR) at high magnetic fields. The LMR, having the linear dependence on carrier mobility, can be successfully explained by the Parish-Littlewood model. This indicates that LMR originates from mobility fluctuation induced by Sr dopant atoms in doped Bi2Se3 films.
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Submitted 18 February, 2022; v1 submitted 16 February, 2022;
originally announced February 2022.
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The critical role of the donor polymer in the stability of high-performance non-fullerene acceptor organic solar cells
Authors:
Yiwen Wang,
Alberto Privitera,
Giacomo Londi,
Alexander J. Sneyd,
Deping Qian,
Yoann Olivier,
Lorenzo Sorace,
David Beljonne,
Zhe Li,
Alexander J. Gillett
Abstract:
Driven by the rapid development of non-fullerene electron acceptors (NFAs), the power conversion efficiencies of organic solar cells (OSCs) have reached levels suitable for commercial applications. However, the poor operational stability of high-performance NFA OSCs is a remaining fundamental challenge that must be addressed. Whilst previous studies have primarily focused on the NFA component, we…
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Driven by the rapid development of non-fullerene electron acceptors (NFAs), the power conversion efficiencies of organic solar cells (OSCs) have reached levels suitable for commercial applications. However, the poor operational stability of high-performance NFA OSCs is a remaining fundamental challenge that must be addressed. Whilst previous studies have primarily focused on the NFA component, we consider here the degradation pathways of both the donor and acceptor materials in the benchmark PM6:Y6 blend. Here, we show that light soaking greatly increases the energetic disorder and trap state density in PM6, with little effect on Y6. This is corroborated by electron paramagnetic resonance spectroscopy, which reveals increased recombination via trapped polarons on PM6 after light soaking. In addition, ultrafast optical spectroscopy studies on light-soaked samples show that PM6 singlet excitons are rapidly converted into interchain polaron pairs on sub-100 fs timescales; this process outcompetes electron transfer to Y6, significantly reducing the charge generation yield of the blend. We make similar observations in the parent polymer, PBDB-T, indicating that this class of donor materials, used in most high-performance OSCs to date, are intrinsically unstable to light soaking. Thus, we reveal that the donor polymer can be a further critical weak link in efficient OSC systems, whose degradation mechanism needs to be addressed collectively with NFAs.
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Submitted 17 December, 2021;
originally announced December 2021.
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Dissipative Edge Transport in Disordered Axion Insulator Films
Authors:
Zhaochen Liu,
Dongheng Qian,
Yadong Jiang,
Jing Wang
Abstract:
We investigate the role of disorder in the edge transport of axion insulator films. We predict by first-principles calculations that even-number-layer MnBi$_2$Te$_4$ have gapped helical edge states. The random potential will dramatically modify the edge spectral function to become gapless. However, such gapless helical state here is fundamentally different from that in quantum spin Hall insulator…
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We investigate the role of disorder in the edge transport of axion insulator films. We predict by first-principles calculations that even-number-layer MnBi$_2$Te$_4$ have gapped helical edge states. The random potential will dramatically modify the edge spectral function to become gapless. However, such gapless helical state here is fundamentally different from that in quantum spin Hall insulator or topological Anderson insulator. We further study the edge transport in this system by Landauer-Büttiker formalism, and find such gapless edge state is dissipative and not immune to backscattering, which would explain the dissipative nonlocal transport in the axion insulator state observed in six septuple layer MnBi$_2$Te$_4$ experimentally. Several transport experiments are proposed to verify our theory on the dissipative helical edge channels. In particular, the longitudinal resistance can be greatly reduced by adding an extra floating probe even if it is not used. These results will facilitate the observsation of long-sought topological magnetoelectric effect in axion insulators.
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Submitted 13 September, 2021;
originally announced September 2021.
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Coexistence of Ferroelectric-like Polarization and Dirac-like Surface State in TaNiTe5
Authors:
Yunlong Li,
Zhao Ran,
Chaozhi Huang,
Guanyong Wang,
Peiyue Shen,
Haili Huang,
Chunqiang Xu,
Yi Liu,
Wenhe Jiao,
Wenxiang Jiang,
Jiayuan Hu,
Gucheng Zhu,
Chenhang Xu,
Qi Lu,
Guohua Wang,
Qiang Jing,
Shiyong Wang,
Zhiwen Shi,
Jinfeng Jia,
Xiaofeng Xu,
Wentao Zhang,
Weidong Luo,
Dong Qian
Abstract:
By combining angle-resolved photoemission spectroscopy (ARPES), scanning tunneling microscopy (STM), piezoresponse force microscopy (PFM) and first-principles calculations, we have studied the low-energy band structure, atomic structure and charge polarization on the surface of a topological semimetal candidate TaNiTe5. Dirac-like surface states were observed on the (010) surface by ARPES, consist…
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By combining angle-resolved photoemission spectroscopy (ARPES), scanning tunneling microscopy (STM), piezoresponse force microscopy (PFM) and first-principles calculations, we have studied the low-energy band structure, atomic structure and charge polarization on the surface of a topological semimetal candidate TaNiTe5. Dirac-like surface states were observed on the (010) surface by ARPES, consistent with the first-principles calculations. On the other hand, PFM reveals a switchable ferroelectric-like polarization on the same surface. We propose that the noncentrosymmetric surface reconstruction observed by STM could be the origin of the observed ferroelectric-like state in this novel material. Our findings provide a new platform with the coexistence of ferroelectric-like surface charge distribution and novel surface states.
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Submitted 17 June, 2021;
originally announced June 2021.
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Magnetic properties of the quasi two-dimensional centered honeycomb antiferromagnet GdInO$_3$
Authors:
Xunqing Yin,
Yunlong Li,
Guohua Wang,
Jiayuan Hu,
Chenhang Xu,
Qi Lu,
Yunlei Zhong,
Jiawang Zhao,
Xiang Zhao,
Yuanlei Zhang,
Yiming Cao,
Kun Xu,
Zhe Li,
Yoshitomo Kamiya,
Guo Hong,
Dong Qian
Abstract:
The crystal structure and magnetic property of the single crystalline hexagonal rare-earth indium oxides GdInO$_3$ have been studied by combing experiments and model calculations. The two inequivalent Gd$^{3+}$ ions form the centered honeycomb lattice, which consists of honeycomb and triangular sublattices. The dc magnetic susceptibility and specific heat measurements suggest two antiferromagnetic…
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The crystal structure and magnetic property of the single crystalline hexagonal rare-earth indium oxides GdInO$_3$ have been studied by combing experiments and model calculations. The two inequivalent Gd$^{3+}$ ions form the centered honeycomb lattice, which consists of honeycomb and triangular sublattices. The dc magnetic susceptibility and specific heat measurements suggest two antiferromagnetic phase transitions at $T_\textrm{N1}$ = 2.3 K and $T_\textrm{N2}$ = 1.02 K. An inflection point is observed in the isothermal magnetization curve, which implies an up-up-down phase with a 1/3 magnetization plateau. We also observe a large magnetic entropy change originated from the magnetic frustration in GdInO$_3$. By considering a classical spin Hamiltonian, we establish the ground state phase diagram, which suggests that GdInO$_3$ has a weak easy-axis anisotropy and is close to the equilateral triangular-lattice system. The theoretical ground-state phase diagram may be used as a reference in NMR, ESR, or $μ$SR experiments in future.
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Submitted 6 September, 2021; v1 submitted 9 June, 2021;
originally announced June 2021.
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Topological quantum phase transition in the magnetic semimetal HoSb
Authors:
Jian-Min Zhang,
Fang Tang,
Yurong Ruan,
Y. Chen,
Runwu Zhang,
Wenti Guo,
Shuiyuan Chen,
Jianping Li,
Weiyao Zhao,
W. Zhou,
Lei Zhang,
Zhida Han,
Bin Qian,
Xuefan Jiang,
Zhigao Huang,
Dong Qian,
Yong Fang
Abstract:
Magnetic topological semimetals, a novel state of quantum matter with nontrivial band topology, have emerged as a new frontier in physics and materials science. An external stimulus like temperature or magnetic field could be expected to alter their spin states and thus the Fermi surface anisotropies and topological features. Here, we perform the angular magnetoresistance measurements and electron…
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Magnetic topological semimetals, a novel state of quantum matter with nontrivial band topology, have emerged as a new frontier in physics and materials science. An external stimulus like temperature or magnetic field could be expected to alter their spin states and thus the Fermi surface anisotropies and topological features. Here, we perform the angular magnetoresistance measurements and electronic band structure calculations to reveal the evolution of HoSb's Fermi surface anisotropies and topological nature in different magnetic states. The angular magnetoresistance results manifest that its Fermi surface anisotropy is robust in the paramagnetic state but is significantly modulated in the antiferromagnetic and ferromagnetic states. More interestingly, a transition from the trivial (nontrivial) to nontrivial (trivial) topological electronic phase is observed when HoSb undergoes a magnetic transition from the paramagnetic (antiferromagnetic) to antiferromagnetic (ferromagnetic) state induced by temperature (applied magnetic field). Our studying suggests that HoSb provides an archetype platform to study the correlations between magnetism and topological states of matter.
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Submitted 24 April, 2021;
originally announced April 2021.
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Mechanical Properties of Atomically Thin Tungsten Dichalcogenides: WS$_2$, WSe$_2$ and WTe$_2$
Authors:
Alexey Falin,
Matthew Holwill,
Haifeng Lv,
Wei Gan,
Jun Cheng,
Rui Zhang,
Dong Qian,
Matthew R. Barnett,
Elton J. G. Santos,
Konstantin S. Novoselov,
Tao Tao,
Xiaojun Wu,
Lu Hua Li
Abstract:
Two-dimensional (2D) tungsten disulfide (WS$_2$), tungsten diselenide (WSe$_2$), and tungsten ditelluride (WTe$_2$) draw increasing attention due to their attractive properties deriving from the heavy tungsten and chalcogenide atoms, but their mechanical properties are still mostly unknown. Here, we determine the intrinsic and air-aged mechanical properties of mono-, bi-, and trilayer (1-3L) WS…
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Two-dimensional (2D) tungsten disulfide (WS$_2$), tungsten diselenide (WSe$_2$), and tungsten ditelluride (WTe$_2$) draw increasing attention due to their attractive properties deriving from the heavy tungsten and chalcogenide atoms, but their mechanical properties are still mostly unknown. Here, we determine the intrinsic and air-aged mechanical properties of mono-, bi-, and trilayer (1-3L) WS$_2$, WSe$_2$ and WTe$_2$ using a complementary suite of experiments and theoretical calculations. High-quality 1L WS$_2$ has the highest Young's modulus (302.4+-24.1 GPa) and strength (47.0+-8.6 GPa) of the entire family, overpassing those of 1L WSe$_2$ (258.6+-38.3 and 38.0+-6.0 GPa, respectively) and WTe$_2$ (149.1+-9.4 and 6.4+-3.3 GPa, respectively). However, the elasticity and strength of WS$_2$ decrease most dramatically with increased thickness among the three materials. We interpret the phenomenon by the different tendencies for interlayer sliding in equilibrium state and under in-plane strain and out-of-plane compression conditions in the indentation process, revealed by finite element method (FEM) and density functional theory (DFT) calculations including van der Waals (vdW) interactions. We also demonstrate that the mechanical properties of the high-quality 1-3L WS$_2$ and WSe$_2$ are largely stable in the air for up to 20 weeks. Intriguingly, the 1-3L WSe$_2$ shows increased modulus and strength values with aging in the air. This is ascribed to oxygen doping, which reinforces the structure. The present study will facilitate the design and use of 2D tungsten dichalcogenides in applications, such as strain engineering and flexible field-effect transistors (FETs).
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Submitted 28 January, 2021;
originally announced January 2021.
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Optical manipulation of electronic dimensionality in a quantum material
Authors:
Shaofeng Duan,
Yun Cheng,
Wei Xia,
Yuanyuan Yang,
Chengyang Xu,
Fengfeng Qi,
Tianwei Tang,
Yanfeng Guo,
Weidong Luo Dong Qian,
Dao Xiang,
Jie Zhang,
Wentao Zhang
Abstract:
Exotic phenomenon can be achieved in quantum materials by confining electronic states into two dimensions. For example, relativistic fermions are realised in a single layer of carbon atoms, the quantized Hall effect can result from two-dimensional (2D) systems, and the superconducting transition temperature can be enhanced significantly in a one-atomic-layer material. Ordinarily, 2D electronic sys…
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Exotic phenomenon can be achieved in quantum materials by confining electronic states into two dimensions. For example, relativistic fermions are realised in a single layer of carbon atoms, the quantized Hall effect can result from two-dimensional (2D) systems, and the superconducting transition temperature can be enhanced significantly in a one-atomic-layer material. Ordinarily, 2D electronic system can be obtained by exfoliating the layered materials, growing monolayer materials on substrates, or establishing interfaces between different materials. Herein, we use femtosecond infrared laser pulses to invert the periodic lattice distortion sectionally in a three-dimensional (3D) charge density wave material, creating macroscopic domain walls of transient 2D ordered electronic states with exotic properties. The corresponding ultrafast electronic and lattice dynamics are captured by time- and angle-resolved photoemission spectroscopy and MeV ultrafast electron diffraction. Surprisingly, a novel energy gap state, which might be a signature of light-induced superconductivity, is identified in the photoinduced 2D domain wall near the surface. Such optical modulation of atomic motion is a new path to realise 2D electronic states and will be a new platform for creating novel phases in quantum materials.
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Submitted 8 July, 2021; v1 submitted 21 January, 2021;
originally announced January 2021.
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Discovery of the Superconductivity in 3d Element Ni doped IrTe$_2$
Authors:
Qiang Jing,
Ping Li,
Yunze Long,
Jingfeng Wang,
Fei Jiao,
Xiaoxiong Wang,
Xiaomin Cui,
Wenxiang Jiang,
Guohua Wang,
Yunlong Li,
Gan Liu,
Cao Wang,
Bo Liu,
Dong Qian
Abstract:
IrTe$_2$ with large spin-orbital coupling (SOC) shows a CDW-like first order structural phase transition from high-temperature trigonal phase to low-temperature monoclinic phase at 270 K, accompanying with a large jump in transport and magnetic measurement as well as in heat capacity. Here, the 3d element Ni has been doped into IrTe$_2$ by growing Ir$_{1-x}$Ni$_x$Te$_2$ single crystals. Both XRD a…
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IrTe$_2$ with large spin-orbital coupling (SOC) shows a CDW-like first order structural phase transition from high-temperature trigonal phase to low-temperature monoclinic phase at 270 K, accompanying with a large jump in transport and magnetic measurement as well as in heat capacity. Here, the 3d element Ni has been doped into IrTe$_2$ by growing Ir$_{1-x}$Ni$_x$Te$_2$ single crystals. Both XRD and XPS results reveal that the Ni atoms have substituted for Ir, which is consistent with the calculation result. Like the CDW behaviour, the structural phase transition shows competition and coexistence with the superconductivity. The monoclinic phase transition has been suppressed gradually with the increase of the doping amount of Ni, at last giving rise to the stabilization of the trigonal phase with superconductivity. Within 0.1$\leq$x$\leq$0.2, Ir$_{1-x}$Ni$_x$Te$_2$ shows the superconductive behaviour with T$_c$ around 2.6K. The superconductivity shows anisotropy with dimensionless anisotropy parameter $γ$=$ξ_{//}$$/$$ξ_{\perp}$$\sim$ 2. Even Ni element shows ferromagnetic behaviour, Ir$_{1-x}$Ni$_x$Te$_2$ only shows weak paramagnetism, no ferromagnetic order is observed in it, which is coincident with the calculation result that their up and down spin density of states compensate each other well. In addition, for other 3d elements Fe, Co and Mn doped IrTe$_2$, only Ir$_{1-x}$Mn$_x$Te$_2$ owns magnetism with magnetic moment of 3.0$μ$$_B$ to the supercell, theoretically.
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Submitted 12 November, 2020;
originally announced November 2020.
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Layer-dependent mechanical properties and enhanced plasticity in the van der Waals chromium trihalide magnets
Authors:
Fernando Cantos-Prieto,
Alexey Falin,
Martin Alliati,
Dong Qian,
Rui Zhang,
Tao Tao,
Matthew R. Barnett,
Elton J. G. Santos,
Lu Hua Li,
Efren Navarro-Moratalla
Abstract:
The mechanical properties of magnetic materials are instrumental for the development of the magnetoelastic theory and the optimization of strain-modulated magnetic devices. In particular, two-dimensional (2D) magnets hold promise to enlarge these concepts into the realm of low-dimensional physics and ultrathin devices. However, no experimental study on the intrinsic mechanical properties of the ar…
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The mechanical properties of magnetic materials are instrumental for the development of the magnetoelastic theory and the optimization of strain-modulated magnetic devices. In particular, two-dimensional (2D) magnets hold promise to enlarge these concepts into the realm of low-dimensional physics and ultrathin devices. However, no experimental study on the intrinsic mechanical properties of the archetypal 2D magnet family of the chromium trihalides has thus far been performed. Here, we report the room temperature layer-dependent mechanical properties of atomically thin CrI3 and CrCl3, finding that bilayers of CrI3 and CrCl3 have Young's moduli of 62.1 GPa and 43.4 GPa, with the highest sustained strain of 6.09% and 6.49% and breaking strengths of 3.6 GPa and 2.2 GPa, respectively. Both the elasticity and strength of the two materials decrease with increased thickness, which is attributed to a weak interlayer interaction that enables interlayer sliding under low levels of applied load. The mechanical properties observed in the few-layer chromium trihalide crystals provide evidence of outstanding plasticity in these materials, which is qualitatively demonstrated in their bulk counterparts. This study will contribute to various applications of the van der Waals magnetic materials, especially for their use in magnetostrictive and flexible devices.
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Submitted 1 April, 2021; v1 submitted 2 November, 2020;
originally announced November 2020.