Showing 1–50 of 69 results for author: Botti, S

Unravelling the Role of Stacking Disorder on the Optoelectronic Properties of Zn3P2

Authors: Francesco Salutari, Nico Kawashima, Aidas Urbonavicius, Helena Rabelo Freitas, Raphael Lemerle, Thomas Hagger, Kimberly A. Dick, Anna Fontcuberta i Morral, Simon Escobar Steinvall, Maria Chiara Spadaro, Silvana Botti, Jordi Arbiol

Abstract: Zinc phosphide (Zn3P2) is a promising photovoltaic absorber for thin-film and flexible solar cells due to its earth-abundant composition and favourable optoelectronic properties. Recent advances in epitaxy have enabled the growth of high-quality Zn3P2 thin films despite the challenges posed by its incompatible lattice parameter and thermal expansion coefficient. However, Zn3P2 remains prone to int… ▽ More Zinc phosphide (Zn3P2) is a promising photovoltaic absorber for thin-film and flexible solar cells due to its earth-abundant composition and favourable optoelectronic properties. Recent advances in epitaxy have enabled the growth of high-quality Zn3P2 thin films despite the challenges posed by its incompatible lattice parameter and thermal expansion coefficient. However, Zn3P2 remains prone to intrinsic extended defects, such as rotated domains, that can limit device performance. Here, using (scanning) transmission electron microscopy, we identify a previously unreported class of extended defects that appear as planar faults described by displacement vectors lying in the (001) plane. Within a pseudo-cubic description of Zn3P2, we establish a direct correspondence between planar faults and rotated domains, showing that both arise from the flexible ordering of vacant sites in the Zn sublattice. First-principles calculations reveal an extremely low planar-defect formation energy of 2.5 mJ m-2, demonstrating that these defects form at essentially negligible energetic cost, in excellent agreement with their high experimentally observed occurrence. Additional density functional theory (DFT) calculations show that intrinsic planar defects neither introduce mid-gap electronic states nor significantly perturb the local electrostatic potential, indicating that they are electronically benign. Instead, we propose that planar defects indirectly degrade device performance by acting as preferential segregation sites for optically active point defects. △ Less

Submitted 8 June, 2026; v1 submitted 5 June, 2026; originally announced June 2026.

Comments: 33 pages

Intrinsic Point Defects and Frenkel Pair Formation in Photovoltaic Absorber Zn$_3$P$_2$: Regulating $p$-type Conductivity through Growth and Annealing Conditions

Authors: Nico Kawashima, Silvana Botti

Abstract: This study investigates the ground-state energetics and thermodynamics of intrinsic point defects in zinc phosphide Zn$_3$P$_2$ using \emph{ab initio} density functional theory combined with an extensive potential energy landscape search. Our analysis reveals that the defect chemistry is dominated by zinc vacancies $V_\mathrm{Zn}$ and zinc interstitials Zn$_i$, with equilibrium concentrations sign… ▽ More This study investigates the ground-state energetics and thermodynamics of intrinsic point defects in zinc phosphide Zn$_3$P$_2$ using \emph{ab initio} density functional theory combined with an extensive potential energy landscape search. Our analysis reveals that the defect chemistry is dominated by zinc vacancies $V_\mathrm{Zn}$ and zinc interstitials Zn$_i$, with equilibrium concentrations significantly surpassing those of other intrinsic species. Notably, we find that phosphorus interstitials P$_i$, previously suggested to be significant, possess high formation energies and likely exist only in negligible quantities. The characteristic $p$-type conductivity of undoped Zn$_3$P$_2$ is shown to be a direct consequence of zinc vacancies, which act as shallow acceptors and pull the Fermi level toward the valence band. Furthermore, we identify a positive binding energy between $V_\mathrm{Zn}$ and Zn$_i$, leading to the formation of electrically benign Frenkel pairs that partially compensate the intrinsic p-type conductivity. Our results suggest that achieving $n$-type conductivity is fundamentally limited by these thermodynamic constraints. We conclude that hole densities can be optimized through phosphorus-rich growth conditions and high-temperature annealing, and suggest that future photovoltaic strategies should prioritize interface engineering over bulk $n$-type doping. △ Less

Submitted 22 May, 2026; originally announced May 2026.

Comments: 11 pages, 12 figures

Cathodoluminescence Analysis of Defects and Grain Boundaries in Zn3P2 Thin Films Grown on Graphene by MOVPE and MBE

Authors: Thomas Hagger, Mohammadreza Hassanzadeh, Aidas Urbonavicius, Ahmed El Alouani, Victor Boureau, Gulnaz Ganeeva, Nico Kawashima, Raphael Lemerle, Kamil Arthur Wodzislawski, Sebastian Lehmann, Kimberly A. Dick, Silvana Botti, Adrien Michon, Anna Fontcuberta i Morral, Simon Escobar Steinvall

Abstract: Zn3P2 is a promising earth-abundant absorber for thin-film photovoltaics, yet its development is hindered by the lack of lattice-matched substrates, its incompatible thermal expansion coefficient, and a complex defect landscape. Here, we demonstrate the quasi-van der Waals epitaxy of Zn3P2 on graphene by metal-organic vapour phase epitaxy (MOVPE) and directly link the density of antiphase boundari… ▽ More Zn3P2 is a promising earth-abundant absorber for thin-film photovoltaics, yet its development is hindered by the lack of lattice-matched substrates, its incompatible thermal expansion coefficient, and a complex defect landscape. Here, we demonstrate the quasi-van der Waals epitaxy of Zn3P2 on graphene by metal-organic vapour phase epitaxy (MOVPE) and directly link the density of antiphase boundaries to optical emission modulation using correlative electron microscopy and cathodoluminescence (CL). Moreover, it is observed through CL that grain boundaries act as non-radiative sinks for excited charge carriers. The effect extends several micrometres into the grains, making grain boundaries detrimental to the applicability of Zn3P2 in read devices. Further comparison with molecular beam epitaxy grown films reveals the suppression of strain-related sub-bandgap emission in MOVPE-grown material. Overall, quasi-van der Waals epitaxy of Zn3P2 by MOVPE resulted in larger grains and improved material quality. In addition, these results directly link extended defects to recombination pathways in Zn3P2 and highlight grain-size control as a key strategy for improving earth-abundant photovoltaic absorbers. △ Less

Submitted 22 May, 2026; originally announced May 2026.

High-throughput study of electrical conductivity in ordered metals

Authors: Thalis H. B. da Silva, Hai-Chen Wang, Tiago F. T. Cerqueira, Simone Di Cataldo, Silvana Botti, Miguel A. L. Marques

Abstract: We present a computational framework that integrates machine learning with high-throughput ab initio calculations to screen over 2.8 million compounds for metallic transport. We identify several intermetallic candidates with predicted high conductivities comparable to that of aluminum (36.59 x $10^6$ S/m). We perform full electron-phonon coupling calculations for the top-performing materials, yiel… ▽ More We present a computational framework that integrates machine learning with high-throughput ab initio calculations to screen over 2.8 million compounds for metallic transport. We identify several intermetallic candidates with predicted high conductivities comparable to that of aluminum (36.59 x $10^6$ S/m). We perform full electron-phonon coupling calculations for the top-performing materials, yielding results in good agreement with available experimental data. Our analysis reveals that while the noble metals (Ag, Au, Cu) possess a conductivity that remains difficult to surpass due to their unique electronic structure and low scattering, compounds like LiBePt2 can achieve comparable performance by utilizing valence electrons from light elements to shift high-scattering d-states beneath the Fermi level. This study not only identifies novel high-performance conductors but also demonstrates the predictive power of combining statistical learning with detailed ab initio calculations. △ Less

Submitted 15 August, 2026; v1 submitted 21 May, 2026; originally announced May 2026.

Functional and Density-Driven Errors in Density Functional Theory: Quantum Monte Carlo Benchmarks for Solids

Authors: Ayoub Aouina, Nicolas Tancogne-Dejean, Silvana Botti

Abstract: We introduce a systematic analysis of density functional approximation errors in solids by separating functional-driven from density-driven contributions using quantum Monte Carlo densities of silicon, sodium chloride, and copper as reference. Typically, functional errors dominate, but we identify important exceptions where density-driven errors exceed functional errors by factors of 2-3, notably… ▽ More We introduce a systematic analysis of density functional approximation errors in solids by separating functional-driven from density-driven contributions using quantum Monte Carlo densities of silicon, sodium chloride, and copper as reference. Typically, functional errors dominate, but we identify important exceptions where density-driven errors exceed functional errors by factors of 2-3, notably for SOGGA11 and τ-HCTH in the semiconductor and the insulator. Material dependence is striking: 63% of functionals show error cancellation in silicon versus 18% in copper, and only five functionals surpass LDA accuracy for metallic copper even with exact densities. For silicon and sodium chloride, GILL or BECKE exchange combined with PBE, PW91, or P86 correlation achieves near-exact xc energies on QMC densities, while copper requires specialized functionals like PBEsol or PBELYP. High-quality densities consistently reduce density-driven errors across all systems. Historical analysis reveals that 1990s GGA functionals outperform many modern meta-GGAs, contradicting expectations of systematic improvement along Jacob's ladder. These results provide practical guidance for functional selection and highlight implications for machine learning potential development, where material-dependent error cancellation may compromise transferability. △ Less

Submitted 14 May, 2026; originally announced May 2026.

Optical selection rules in hexagonal Ge polytypes and their lifting by symmetry perturbation

Authors: Martin Keller, Haichen Wang, Friedhelm Bechstedt, Jürgen Furthmüller, Silvana Botti

Abstract: Hexagonal germanium polytypes have emerged as promising direct-gap semiconductors for silicon-integrated optoelectronics, yet their optical properties remain largely unexplored beyond the well-studied 2H phase. We present a comprehensive theoretical study of optical properties of hexagonal 2H-, 4H-, and 6H-Ge polytypes through ab initio calculations of quasiparticle band structures, dipole transit… ▽ More Hexagonal germanium polytypes have emerged as promising direct-gap semiconductors for silicon-integrated optoelectronics, yet their optical properties remain largely unexplored beyond the well-studied 2H phase. We present a comprehensive theoretical study of optical properties of hexagonal 2H-, 4H-, and 6H-Ge polytypes through ab initio calculations of quasiparticle band structures, dipole transition matrix elements, and solution of the Bethe-Salpeter equation. While all three polytypes exhibit direct band gaps of increasing size from 2H to 6H, we reveal that the fundamental optical transition in 4H-Ge is parity-forbidden due to matching band parities at the valence and conduction band edges. This selection rule results in a radiative lifetime seven orders of magnitude longer than in 2H- and 6H-Ge, severely limiting light emission capabilities. To demonstrate that the selection rule can be lifted, we introduce controlled symmetry perturbations by substituting single Ge atoms with Si in each unit cell, breaking the crystal symmetry. This perturbation increases the optical matrix elements by up to two orders of magnitude and reduces radiative lifetimes for all perturbed polytypes. We also compute absorption coefficients and frequency-dependent dielectric tensors for both light polarizations, including excitonic effects up to 5 eV, providing complete optical characterization of ideal and symmetry-perturbed hexagonal Ge systems relevant for optoelectronic applications. △ Less

Submitted 11 May, 2026; originally announced May 2026.

Comments: 21 pages, 7 figures, submitted to Phys. Rev. B

AI-Driven Expansion and Application of the Alexandria Database

Authors: Théo Cavignac, Jonathan Schmidt, Pierre-Paul De Breuck, Antoine Loew, Tiago F. T. Cerqueira, Hai-Chen Wang, Anton Bochkarev, Yury Lysogorskiy, Aldo H. Romero, Ralf Drautz, Silvana Botti, Miguel A. L. Marques

Abstract: We present a novel multi-stage workflow for computational materials discovery that achieves a 99% success rate in identifying compounds within 100 meV/atom of thermodynamic stability, with a threefold improvement over previous approaches. By combining the Matra-Genoa generative model, Orb-v2 universal machine learning interatomic potential, and ALIGNN graph neural network for energy prediction, we… ▽ More We present a novel multi-stage workflow for computational materials discovery that achieves a 99% success rate in identifying compounds within 100 meV/atom of thermodynamic stability, with a threefold improvement over previous approaches. By combining the Matra-Genoa generative model, Orb-v2 universal machine learning interatomic potential, and ALIGNN graph neural network for energy prediction, we generated 119 million candidate structures and added 1.3 million DFT-validated compounds to the ALEXANDRIA database, including 74 thousand new stable materials. The expanded ALEXANDRIA database now contains 5.8 million structures with 175 thousand compounds on the convex hull. Predicted structural disorder rates (37-43%) match experimental databases, unlike other recent AI-generated datasets. Analysis reveals fundamental patterns in space group distributions, coordination environments, and phase stability networks, including sub-linear scaling of convex hull connectivity. We release the complete dataset, including sAlex25 with 14 million out-of-equilibrium structures containing forces and stresses for training universal force fields. We demonstrate that fine-tuning a GRACE model on this data improves benchmark accuracy. All data, models, and workflows are freely available under Creative Commons licenses. △ Less

Submitted 1 May, 2026; v1 submitted 9 December, 2025; originally announced December 2025.

Unconventional cross sections in zinc phosphide nanowires grown using exclusively earth-abundant components

Authors: Simon Escobar Steinvall, Hampus Thulin, Nico Kawashima, Francesco Salutari, Jonas Johansson, Aidas Urbonavicius, Sebastian Lehmann, Maria Chiara Spadaro, Jordi Arbiol, Silvana Botti, Kimberly A. Dick

Abstract: To enable lightweight and flexible solar cell applications it is imperative to develop direct bandgap absorber materials. Moreover, to enhance the potential sustainability impact of the technologies there is a drive to base the devices on earth-abundant and readily available elements. Herein, we report on the epitaxial growth of Zn3P2 nanowires using exclusively earth-abundant components, using Sn… ▽ More To enable lightweight and flexible solar cell applications it is imperative to develop direct bandgap absorber materials. Moreover, to enhance the potential sustainability impact of the technologies there is a drive to base the devices on earth-abundant and readily available elements. Herein, we report on the epitaxial growth of Zn3P2 nanowires using exclusively earth-abundant components, using Sn as the nanowire catalyst and Si (111) as the substrate. We observe that the nanowires exhibit a triangular cross section at lower temperatures, a pseudo-pentagonal cross section at intermediate temperatures, and a hexagonal cross section in a twin plane superlattice configuration at high temperatures and high V/II ratios. At low temperatures, the surface facets are constricted into a metastable configuration, yielding the triangular morphology due to the symmetry of the substrate, while intermediate temperatures facilitate the formation of a pseudo-pentagonal morphology with lower surface to volume ratio. The twin plane superlattice structure can only be observed at conditions that facilitate the incorporation of Sn into Zn3P2, which is needed to form heterotwins in the tetragonal structure, namely at high temperatures and high phosphine partial pressures. These findings show a clear pathway to use Zn3P2 nanowires in sustainable solar energy harvesting using exclusively earth-abundant components, as well as opening up a novel route of fabricating quantum wells inside nanowires using heterotwins. △ Less

Submitted 5 November, 2025; originally announced November 2025.

Generative AI for Crystal Structures: A Review

Authors: Pierre-Paul De Breuck, Hai-Chen Wang, Gian-Marco Rignanese, Silvana Botti, Miguel A. L. Marques

Abstract: As in many other fields, the rapid rise of generative artificial intelligence is reshaping materials discovery by offering new ways to propose crystal structures and, in some cases, even predict desired properties. This review provides a comprehensive survey of recent advancements in generative models specifically for inorganic crystalline materials. We begin by introducing the fundamentals of gen… ▽ More As in many other fields, the rapid rise of generative artificial intelligence is reshaping materials discovery by offering new ways to propose crystal structures and, in some cases, even predict desired properties. This review provides a comprehensive survey of recent advancements in generative models specifically for inorganic crystalline materials. We begin by introducing the fundamentals of generative modeling and invertible material descriptors. We then propose a taxonomy based on architecture, representation, conditioning, and materials domain to categorize the diverse range of current generative AI models. We discuss data sources and address challenges related to performance metrics, emphasizing the need for standardized benchmarks. Specific examples and applications of novel generated structures are presented. Finally, we examine current limitations and future directions in this rapidly evolving field, highlighting its potential to accelerate the discovery of new inorganic materials. △ Less

Submitted 2 September, 2025; originally announced September 2025.

Comments: 23 pages, 4 figures, 3 tables

Universal Machine Learning Potentials under Pressure

Authors: Antoine Loew, Jonathan Schmidt, Silvana Botti, Miguel A. L. Marques

Abstract: Universal machine learning interatomic potentials (uMLIPs) represent arguably the most successful application of machine learning to materials science, demonstrating remarkable performance across diverse applications. However, critical blind spots in their reliability persist. Here, we address one such significant gap by systematically investigating the accuracy of uMLIPs under extreme pressure co… ▽ More Universal machine learning interatomic potentials (uMLIPs) represent arguably the most successful application of machine learning to materials science, demonstrating remarkable performance across diverse applications. However, critical blind spots in their reliability persist. Here, we address one such significant gap by systematically investigating the accuracy of uMLIPs under extreme pressure conditions from 0 to 150 GPa. Our benchmark reveals that while these models excel at standard pressure, their predictive accuracy deteriorates considerably as pressure increases. This decline in performance originates from fundamental limitations in the training data rather than in algorithmic constraints. In fact, we show that through targeted fine-tuning on high-pressure configurations, the robustness of the models can be easily increased. These findings underscore the importance of identifying and addressing overlooked regimes in the development of the next generation of truly universal interatomic potentials. △ Less

Submitted 25 August, 2025; originally announced August 2025.

Universal Machine Learning Potential for Systems with Reduced Dimensionality

Authors: Giulio Benedini, Antoine Loew, Matti Hellstrom, Silvana Botti, Miguel A. L. Marques

Abstract: We present a benchmark designed to evaluate the predictive capabilities of universal machine learning interatomic potentials across systems of varying dimensionality. Specifically, our benchmark tests zero- (molecules, atomic clusters, etc.), one- (nanowires, nanoribbons, nanotubes, etc.), two- (atomic layers and slabs) and three-dimensional (bulk materials) compounds. The benchmark reveals that w… ▽ More We present a benchmark designed to evaluate the predictive capabilities of universal machine learning interatomic potentials across systems of varying dimensionality. Specifically, our benchmark tests zero- (molecules, atomic clusters, etc.), one- (nanowires, nanoribbons, nanotubes, etc.), two- (atomic layers and slabs) and three-dimensional (bulk materials) compounds. The benchmark reveals that while all tested models demonstrate excellent performance for three-dimensional systems, accuracy degrades progressively for lower-dimensional structures. The best performing models for geometry optimization are orbital version 2, equiformerV2, and the equivariant Smooth Energy Network, with the equivariant Smooth Energy Network also providing the most accurate energies. Our results indicate that the best models yield, on average, errors in the atomic positions in the range of 0.01-0.02 angstrom and errors in the energy below 10~meV/atom across all dimensionalities. These results demonstrate that state-of-the-art universal machine learning interatomic potentials have reached sufficient accuracy to serve as direct replacements for density functional theory calculations, at a small fraction of the computational cost, in simulations spanning the full range from isolated atoms to bulk solids. More significantly, the best performing models already enable efficient simulations of complex systems containing subsystems of mixed dimensionality, opening new possibilities for modeling realistic materials and interfaces. △ Less

Submitted 21 August, 2025; originally announced August 2025.

Electronic structure reorganization in MPS3 via d-shell-selective alkali metal doping

Authors: Jonah Elias Nitschke, Preeti Bhumla, Till Willershausen, Patrick Merisescu, David Janas, Lasse Sternemann, Michael Gutnikov, Karl Schiller, Valentin Mischke, Michele Capra, Mira Sophie Arndt, Silvana Botti, Mirko Cinchetti

Abstract: Semiconducting two-dimensional (2D) antiferromagnetic (AFM) transition-metal thiophosphates (MPS3) offer promising opportunities for spintronic applications due to their highly tunable electronic properties. While alloying and intercalation have been shown to modulate ground states, the role of d-shell filling in governing these transitions remains insufficiently understood. Here, we investigate e… ▽ More Semiconducting two-dimensional (2D) antiferromagnetic (AFM) transition-metal thiophosphates (MPS3) offer promising opportunities for spintronic applications due to their highly tunable electronic properties. While alloying and intercalation have been shown to modulate ground states, the role of d-shell filling in governing these transitions remains insufficiently understood. Here, we investigate electron doping effects in MPS3 using angle-resolved photoemission spectroscopy (ARPES), X-ray photoelectron spectroscopy (XPS), and density functional theory (DFT+U). Lithium and cesium deposition are employed to induce doping across different MPS3 compounds. We identify two distinct doping mechanisms: in MnPS3, electrons are primarily donated to the P2S6 ligand clusters, with negligible Mn 2p core-level shifts and no major changes in the valence band. In contrast, FePS3, CoPS3, and NiPS3 exhibit clear reductions in transition-metal oxidation states, with a 1.0 eV reduction in spin-orbit splitting for Co upon doping. ARPES on CoPS3 reveals a 400 meV shift of Co-derived bands towards higher binding energies and new dispersive states up to 1 eV above the valence band maximum, indicating metallic behavior. These results establish a direct correlation between d-shell filling and doping response, highlighting alkali metal doping as a tunable route to tailor the electronic and magnetic properties of 2D AFM semiconductors for spintronic applications. △ Less

Submitted 2 June, 2025; originally announced June 2025.

Enhanced superconductivity in X4H15compounds via hole-doping at ambient pressure

Authors: Kun Gao, Wenwen Cui, Tiago F. T. Cerqueira, Hai-ChenWang, Silvana Botti, Miguel A. L. Marque

Abstract: This study presents a computational investigation of X4H15 compounds (where X represents a metal) as potential superconductors at ambient conditions or under pressure. Through systematic density functional theory calculations and electron-phonon coupling analysis, we demonstrate that electronic structure engineering via hole doping dramatically enhances the superconducting properties of these mate… ▽ More This study presents a computational investigation of X4H15 compounds (where X represents a metal) as potential superconductors at ambient conditions or under pressure. Through systematic density functional theory calculations and electron-phonon coupling analysis, we demonstrate that electronic structure engineering via hole doping dramatically enhances the superconducting properties of these materials. While electron-doped compounds with X4+ cations (Ti, Zr, Hf, Th) exhibit modest transition temperatures of 1-9 K, hole-doped systems with X3+cations (Y, Tb, Dy, Ho,Er, Tm, Lu) show remarkably higher values of approximately 50 K at ambient pressure. Superconductivity in hole-doped compounds originates from stronger coupling between electrons and both cation and hydrogen phonon modes. Although pristine X3+4H15compounds are thermodynamically unstable, we propose a viable synthesis route via controlled hole doping of the charge-compensated YZr3H15 compound. Our calculations predict that even minimal concentrations of excess Y could induce high-temperature superconductivity while preserving structural integrity. This work reveals how strategic electronic structure modulation can optimize superconducting properties in hydride systems, establishing a promising pathway toward practical high-temperature conventional super-conductors at ambient pressure △ Less

Submitted 29 April, 2025; originally announced April 2025.

Real-time simulations of laser-induced electron excitations in crystalline ZnO

Authors: Xiao Chen, Thomas Lettau, Ulf Peschel, Nicolas Tancogne-Dejean, Silvana Botti

Abstract: We investigate non-equilibrium electron dynamics in crystalline ZnO induced by ultrashort, relatively intense, infrared laser pulses. Our focus is on understanding the mechanism that facilitates efficient conduction band population in ZnO to enable optically pumped lasing. We consider two different pulse frequencies (in the near-infrared and mid-infrared) for which experimental data are available,… ▽ More We investigate non-equilibrium electron dynamics in crystalline ZnO induced by ultrashort, relatively intense, infrared laser pulses. Our focus is on understanding the mechanism that facilitates efficient conduction band population in ZnO to enable optically pumped lasing. We consider two different pulse frequencies (in the near-infrared and mid-infrared) for which experimental data are available, and we calculate the electronic response of a ZnO crystal for a wide range of pulse intensities. We apply and compare three complementary theoretical approaches: the analytical Keldysh model, the numerical solution of the semiconductor Bloch equations, and real-time time-dependent density functional theory. We conclude that time-dependent density functional theory is a valid \textit{ab initio} approach for predicting conduction band population, that offers an accurate enough description of static and transient optical properties of solids and provides physics insight into the intermediate excitation regime, where electronic excitations are determined by the interplay of intraband tunneling, a consequence of band bending, and interband multi-photon absorption. △ Less

Submitted 20 March, 2025; originally announced March 2025.

Comments: 13 pages, 6 figures

The Maximum $T_c$ of Conventional Superconductors at Ambient Pressure

Authors: Kun Gao, Tiago F. T. Cerqueira, Antonio Sanna, Yue-Wen Fang, Đorđe Dangić, Ion Errea, Hai-Chen Wang, Silvana Botti, Miguel A. L. Marques

Abstract: The theoretical maximum critical temperature ($T_c$) for conventional superconductors at ambient pressure remains a fundamental question in condensed matter physics. Through analysis of electron-phonon calculations for over 20,000 metals, we critically examine this question. We find that while hydride metals can exhibit maximum phonon frequencies of more than 5000 K, the crucial logarithmic averag… ▽ More The theoretical maximum critical temperature ($T_c$) for conventional superconductors at ambient pressure remains a fundamental question in condensed matter physics. Through analysis of electron-phonon calculations for over 20,000 metals, we critically examine this question. We find that while hydride metals can exhibit maximum phonon frequencies of more than 5000 K, the crucial logarithmic average frequency $ω_\text{log}$ rarely exceeds 1800 K. Our data reveals an inherent trade-off between $ω_\text{log}$ and the electron-phonon coupling constant $λ$, suggesting that the optimal Eliashberg function that maximizes $T_c$ is unphysical. Based on our calculations, we identify Li$_2$AgH$_6$ and its sibling Li$_2$AuH$_6$ as theoretical materials that likely approach the practical limit for conventional superconductivity at ambient pressure. Analysis of thermodynamic stability indicates that compounds with higher predicted $T_c$ values are increasingly unstable, making their synthesis challenging. While fundamental physical laws do not strictly limit $T_c$ to low-temperatures, our analysis suggests that achieving room-temperature conventional superconductivity at ambient pressure is extremely unlikely. △ Less

Submitted 25 February, 2025; originally announced February 2025.

Journal ref: Nat Commun 16, 8253 (2025)

Universal Machine Learning Interatomic Potentials are Ready for Phonons

Authors: Antoine Loew, Dewen Sun, Hai-Chen Wang, Silvana Botti, Miguel A. L. Marques

Abstract: There has been an ongoing race for the past several years to develop the best universal machinelearning interatomic potential. This progress has led to increasingly accurate models for predictingenergy, forces, and stresses, combining innovative architectures with big data. Here, we benchmarkthese models on their ability to predict harmonic phonon properties, which are critical for under-standing… ▽ More There has been an ongoing race for the past several years to develop the best universal machinelearning interatomic potential. This progress has led to increasingly accurate models for predictingenergy, forces, and stresses, combining innovative architectures with big data. Here, we benchmarkthese models on their ability to predict harmonic phonon properties, which are critical for under-standing the vibrational and thermal behavior of materials. Using around 10 000 ab initio phononcalculations, we evaluate model performance across various phonon-related parameters to test theuniversal applicability of these models. The results reveal that some models achieve high accuracyin predicting harmonic phonon properties. However, others still exhibit substantial inaccuracies,even if they excel in the prediction of the energy and the forces for materials close to dynamicalequilibrium. These findings highlight the importance of considering phonon-related properties inthe development of universal machine learning interatomic potentials. △ Less

Submitted 8 May, 2025; v1 submitted 21 December, 2024; originally announced December 2024.

Prediction of high-Tc superconductivity in ternary actinium beryllium hydrides at low pressure

Authors: Kun Gao, Wenwen Cui, Jingming Shi, Artur P. Durajski, Jian Hao, Silvana Botti, Miguel A. L. Marques, Yinwei Li

Abstract: Hydrogen-rich superconductors are promising candidates to achieve room-temperature superconductivity. However, the extreme pressures needed to stabilize these structures significantly limit their practical applications. An effective strategy to reduce the external pressure is to add a light element M that binds with H to form MHx units, acting as a chemical precompressor. We exemplify this idea by… ▽ More Hydrogen-rich superconductors are promising candidates to achieve room-temperature superconductivity. However, the extreme pressures needed to stabilize these structures significantly limit their practical applications. An effective strategy to reduce the external pressure is to add a light element M that binds with H to form MHx units, acting as a chemical precompressor. We exemplify this idea by performing ab initio calculations of the Ac-Be-H phase diagram, proving that the metallization pressure of Ac-H binaries, for which critical temperatures as high as 200 K were predicted at 200 GPa, can be significantly reduced via beryllium incorporation. We identify three thermodynamically stable (AcBe2H10, AcBeH8, and AcBe2H14) and four metastable compounds (fcc AcBeH8, AcBeH10, AcBeH12 and AcBe2H16). All of them are superconductors. In particular, fcc AcBeH8 remains dynamically stable down to 10 GPa, where it exhibits a superconducting transition temperature Tc of 181 K. The Be-H bonds are responsible for the exceptional properties of these ternary compounds and allow them to remain dynamically stable close to ambient pressure. Our results suggest that high-Tc superconductivity in hydrides is achievable at low pressure and may stimulate experimental synthesis of ternary hydrides. △ Less

Submitted 6 August, 2025; v1 submitted 28 November, 2024; originally announced November 2024.

Journal ref: Physical Review B 109,014501(2024)

A non-orthogonal representation of the chemical space

Authors: Tiago F. T. Cerqueira, Haichen Wang, Silvana Botti, Miguel A. L. Marques

Abstract: We present a novel approach to generate a fingerprint for crystalline materials that balances efficiency for machine processing and human interpretability, allowing its application in both machine learning inference and understanding of structure-property relationships. Our proposed material encoding has two components: one representing the crystal structure and the other characterizing the chemic… ▽ More We present a novel approach to generate a fingerprint for crystalline materials that balances efficiency for machine processing and human interpretability, allowing its application in both machine learning inference and understanding of structure-property relationships. Our proposed material encoding has two components: one representing the crystal structure and the other characterizing the chemical composition, that we call Pettifor embedding. For the latter we construct a non-orthogonal space where each axis represents a chemical element and where the angle between the axes quantifies a measure of the similarity between them. The chemical composition is then defined by the point on the unit sphere in this non-orthogonal space. We show that the Pettifor embeddings systematically outperform other commonly used elemental embeddings in compositional machine learning models. Using the Pettifor embeddings to define a distance metric and applying dimension reduction techniques, we construct a two-dimensional global map of the space of thermodynamically stable crystalline compounds. Despite their simplicity, such maps succeed in providing a physical separation of material classes according to basic physical properties. △ Less

Submitted 20 March, 2025; v1 submitted 28 June, 2024; originally announced June 2024.

Developments and applications of the OPTIMADE API for materials discovery, design, and data exchange

Authors: Matthew L. Evans, Johan Bergsma, Andrius Merkys, Casper W. Andersen, Oskar B. Andersson, Daniel Beltrán, Evgeny Blokhin, Tara M. Boland, Rubén Castañeda Balderas, Kamal Choudhary, Alberto Díaz Díaz, Rodrigo Domínguez García, Hagen Eckert, Kristjan Eimre, María Elena Fuentes Montero, Adam M. Krajewski, Jens Jørgen Mortensen, José Manuel Nápoles Duarte, Jacob Pietryga, Ji Qi, Felipe de Jesús Trejo Carrillo, Antanas Vaitkus, Jusong Yu, Adam Zettel, Pedro Baptista de Castro , et al. (34 additional authors not shown)

Abstract: The Open Databases Integration for Materials Design (OPTIMADE) application programming interface (API) empowers users with holistic access to a growing federation of databases, enhancing the accessibility and discoverability of materials and chemical data. Since the first release of the OPTIMADE specification (v1.0), the API has undergone significant development, leading to the upcoming v1.2 relea… ▽ More The Open Databases Integration for Materials Design (OPTIMADE) application programming interface (API) empowers users with holistic access to a growing federation of databases, enhancing the accessibility and discoverability of materials and chemical data. Since the first release of the OPTIMADE specification (v1.0), the API has undergone significant development, leading to the upcoming v1.2 release, and has underpinned multiple scientific studies. In this work, we highlight the latest features of the API format, accompanying software tools, and provide an update on the implementation of OPTIMADE in contributing materials databases. We end by providing several use cases that demonstrate the utility of the OPTIMADE API in materials research that continue to drive its ongoing development. △ Less

Submitted 5 April, 2024; v1 submitted 1 February, 2024; originally announced February 2024.

Journal ref: Digital Discovery, 2024, 3, 1509-1533

Determination of acoustic phonon anharmonicities via second-order Raman scattering in CuI

Authors: Ron Hildebrandt, Michael Seifert, Janine George, Steffen Blaurock, Silvana Botti, Harald Krautscheid, Marius Grundmann, Chris Sturm

Abstract: We demonstrate the determination of anharmonic acoustic phonon properties via second-order Raman scattering exemplarily on copper iodide single crystals. The origin of multi-phonon features from the second-order Raman spectra was assigned by the support of the calculated 2-phonon density of states. In this way, the temperature dependence of acoustic phonons was determined down to 10\,K. To determi… ▽ More We demonstrate the determination of anharmonic acoustic phonon properties via second-order Raman scattering exemplarily on copper iodide single crystals. The origin of multi-phonon features from the second-order Raman spectra was assigned by the support of the calculated 2-phonon density of states. In this way, the temperature dependence of acoustic phonons was determined down to 10\,K. To determine independently the harmonic contributions of respective acoustic phonons, density functional theory (DFT) in quasi-harmonic approximation was used. Finally, the anharmonic contributions were determined. The results are in agreement with earlier publications and extend CuI's determined acoustic phonon properties to lower temperatures with higher accuracy. This approach demonstrates that it is possible to characterize the acoustic anharmonicities via Raman scattering down to zero-temperature renormalization constants of at least 0.1\,cm$^{-1}$. △ Less

Submitted 15 September, 2023; v1 submitted 30 May, 2023; originally announced May 2023.

Comments: 10 pages, 5 figures, 4 tables

Structure prediction and characterization of CuI-based ternary $p$-type transparent conductors

Authors: Michael Seifert, Tomáš Rauch, Miguel A. L. Marques, Silvana Botti

Abstract: Zincblende copper iodide has attracted significant interest as a potential material for transparent electronics, thanks to its exceptional light transmission capabilities in the visible range and remarkable hole conductivity. However, remaining challenges hinder the utilization of copper iodide's unique properties in real-world applications. To address this, chalcogen doping has emerged as a viabl… ▽ More Zincblende copper iodide has attracted significant interest as a potential material for transparent electronics, thanks to its exceptional light transmission capabilities in the visible range and remarkable hole conductivity. However, remaining challenges hinder the utilization of copper iodide's unique properties in real-world applications. To address this, chalcogen doping has emerged as a viable approach to enhance the hole concentration in copper iodide. In search of further strategies to improve and tune the electronic properties of this transparent semiconductor, we investigate the ternary phase diagram of copper and iodine with sulphur or selenium by performing structure prediction calculations using the minima hopping method. As a result, we find 11 structures located on or near the convex hull, 9 of which are unreported. Based on our band structure calculations, it appears that sulphur and selenium are promising candidates for achieving ternary semiconductors suitable as $p$-type transparent conducting materials. Additionally, our study reveals the presence of unreported phases that exhibit intriguing topological properties. These findings broaden the scope of potential applications for these ternary systems, highlighting the possibility of harnessing their unique electronic characteristics in diverse electronic devices and systems. △ Less

Submitted 24 May, 2023; originally announced May 2023.

Transfer learning on large datasets for the accurate prediction of material properties

Authors: Noah Hoffmann, Jonathan Schmidt, Silvana Botti, Miguel A. L. Marques

Abstract: Graph neural networks trained on large crystal structure databases are extremely effective in replacing ab initio calculations in the discovery and characterization of materials. However, crystal structure datasets comprising millions of materials exist only for the Perdew-Burke-Ernzerhof (PBE) functional. In this work, we investigate the effectiveness of transfer learning to extend these models t… ▽ More Graph neural networks trained on large crystal structure databases are extremely effective in replacing ab initio calculations in the discovery and characterization of materials. However, crystal structure datasets comprising millions of materials exist only for the Perdew-Burke-Ernzerhof (PBE) functional. In this work, we investigate the effectiveness of transfer learning to extend these models to other density functionals. We show that pre-training significantly reduces the size of the dataset required to achieve chemical accuracy and beyond. We also analyze in detail the relationship between the transfer-learning performance and the size of the datasets used for the initial training of the model and transfer learning. We confirm a linear dependence of the error on the size of the datasets on a log-log scale, with a similar slope for both training and the pre-training datasets. This shows that further increasing the size of the pre-training dataset, i.e. performing additional calculations with a low-cost functional, is also effective, through transfer learning, in improving machine-learning predictions with the quality of a more accurate, and possibly computationally more involved functional. Lastly, we compare the efficacy of interproperty and intraproperty transfer learning. △ Less

Submitted 6 March, 2023; originally announced March 2023.

First-principles insight in structure-property relationships of hexagonal Si and Ge polytypes

Authors: Martin Keller, Abderrezak Belabbes, Jürgen Furthmüller, Friedhelm Bechstedt, Silvana Botti

Abstract: Hexagonal SiGe is a promising material for combining electronic and photonic technologies. In this work, the energetic, structural, elastic and electronic properties of the hexagonal polytypes (2$H$, 4$H$ and 6$H$) of silicon and germanium are thoroughly analyzed under equilibrium conditions. For this purpose, we apply state-of-the-art density functional theory. The phase diagram, obtained in the… ▽ More Hexagonal SiGe is a promising material for combining electronic and photonic technologies. In this work, the energetic, structural, elastic and electronic properties of the hexagonal polytypes (2$H$, 4$H$ and 6$H$) of silicon and germanium are thoroughly analyzed under equilibrium conditions. For this purpose, we apply state-of-the-art density functional theory. The phase diagram, obtained in the framework of a generalized Ising model, shows that the diamond structure is the most stable under ambient conditions, but hexagonal modifications are close to the phase boundary, especially for Si. Our band-structure calculations using the MBJLDA and HSE06 exchange correlation functionals predict significant changes in electronic states with hexagonality. While Si crystals are always semiconductors with indirect band gaps, the hexagonal Ge polytypes have direct band gaps. The branch point energies for Ge crystals are below the valence band maxima, and therefore the formation of hole gases on Ge surfaces is favoured. Band alignment based on the branch point energy leads to type-I heterocrystalline interfaces between Ge polytypes, where electrons and holes can be trapped in the layer with the higher hexagonality. In contrast, the energy shift of the indirect conduction band minima of Si polytypes is rather weak, leading to delocalization of excited electrons at interfaces, while only holes can localize in the layer with higher hexagonality. △ Less

Submitted 21 February, 2023; originally announced February 2023.

Comments: 37 pages, 7 figures, submitted to Physical Review Materials

Effects of hole doping on the electronic and optical properties of transparent conducting copper iodide

Authors: Michael Seifert, Miguel A. L. Marques, Silvana Botti

Abstract: Zincblende copper iodide has been attracting growing interest as p-type semiconductor for applications in transparent electronics and transparent thermoelectrics. A key step towards technological applications is the possibility to enhance copper iodide (CuI) conductivity by doping without deteriorating transparency. A recent high-throughput computational study revealed that chalcogen substitutions… ▽ More Zincblende copper iodide has been attracting growing interest as p-type semiconductor for applications in transparent electronics and transparent thermoelectrics. A key step towards technological applications is the possibility to enhance copper iodide (CuI) conductivity by doping without deteriorating transparency. A recent high-throughput computational study revealed that chalcogen substitutions on iodine sites can act as shallow acceptors. Following computational predictions, doping by oxygen, sulfur and selenium substitutions on iodine sites has recently been realized in the laboratory, showing however that few experimental challenges have still to be tackled on the way to technological applications. We investigate here by means of {\it ab initio} calculations the effect of such substitutions on the electronic and optical properties of CuI. Our results suggest that sulfur and selenium doping are the best candidates to obtain a controllable increase of hole concentrations, while preserving at the same time transparency in the visible and high hole mobility. △ Less

Submitted 21 December, 2022; originally announced December 2022.

Favorable band alignment for photocatalysis at the strontium germanate interface with silicon

Authors: Tomáš Rauch, Pavel Marton, Silvana Botti, Jiří Hlinka

Abstract: Photocatalytic water splitting is a promising strategy for large-scale clean energy production. However, efficient and low-cost solid-state photocatalysts are still lacking. We present here first-principles calculations to investigate the suitability as photocathode of an epitaxial layer of strontium germanate on a Si(100) single crystal. Conduction and valence bands offsets at the interface betwe… ▽ More Photocatalytic water splitting is a promising strategy for large-scale clean energy production. However, efficient and low-cost solid-state photocatalysts are still lacking. We present here first-principles calculations to investigate the suitability as photocathode of an epitaxial layer of strontium germanate on a Si(100) single crystal. Conduction and valence bands offsets at the interface between these two semiconductors were determined using state-of-the-art approximations of density functional theory for the accurate prediction of band alignments. The resulting type-III band line-up is also confirmed by inspection of the spatially resolved density of states. It is concluded that the electronic structure of the investigated heterostructure is favorable for photocathodic functionality. △ Less

Submitted 20 December, 2022; originally announced December 2022.

Journal ref: Phys. Rev. B 107, 115303 (2023)

Large-scale machine-learning-assisted exploration of the whole materials space

Authors: Jonathan Schmidt, Noah Hoffmann, Hai-Chen Wang, Pedro Borlido, Pedro J. M. A. Carriço, Tiago F. T. Cerqueira, Silvana Botti, Miguel A. L. Marques

Abstract: Crystal-graph attention networks have emerged recently as remarkable tools for the prediction of thermodynamic stability and materials properties from unrelaxed crystal structures. Previous networks trained on two million materials exhibited, however, strong biases originating from underrepresented chemical elements and structural prototypes in the available data. We tackled this issue computing a… ▽ More Crystal-graph attention networks have emerged recently as remarkable tools for the prediction of thermodynamic stability and materials properties from unrelaxed crystal structures. Previous networks trained on two million materials exhibited, however, strong biases originating from underrepresented chemical elements and structural prototypes in the available data. We tackled this issue computing additional data to provide better balance across both chemical and crystal-symmetry space. Crystal-graph networks trained with this new data show unprecedented generalization accuracy, and allow for reliable, accelerated exploration of the whole space of inorganic compounds. We applied this universal network to perform machine-learning assisted high-throughput materials searches including 2500 binary and ternary structure prototypes and spanning about 1 billion compounds. After validation using density-functional theory, we uncover in total 19512 additional materials on the convex hull of thermodynamic stability and ~150000 compounds with a distance of less than 50 meV/atom from the hull. Combining again machine learning and ab-initio methods, we finally evaluate the discovered materials for applications as superconductors, superhard materials, and we look for candidates with large gap deformation potentials, finding several compounds with extreme values of these properties. △ Less

Submitted 2 October, 2022; originally announced October 2022.

Efficient and improved prediction of the band offsets at semiconductor heterojunctions from meta-GGA density functionals

Authors: Arghya Ghosh, Subrata Jana, Tomáš Rauch, Fabien Tran, Miguel A. L. Marques, Silvana Botti, Lucian A. Constantin, Manish K. Niranjan, Prasanjit Samal

Abstract: Accurate theoretical prediction of the band offsets at interfaces of semiconductor heterostructures can often be quite challenging. Although density functional theory has been reasonably successful to carry out such calculations and efficient and accurate semilocal functionals are desirable to reduce the computational cost. In general, the semilocal functionals based on the generalized gradient ap… ▽ More Accurate theoretical prediction of the band offsets at interfaces of semiconductor heterostructures can often be quite challenging. Although density functional theory has been reasonably successful to carry out such calculations and efficient and accurate semilocal functionals are desirable to reduce the computational cost. In general, the semilocal functionals based on the generalized gradient approximation (GGA) significantly underestimate the bulk band gaps. This, in turn, results in inaccurate estimates of the band offsets at the heterointerfaces. In this paper, we investigate the performance of several advanced meta-GGA functionals in the computational prediction of band offsets at semiconductor heterojunctions. In particular, we investigate the performance of r2SCAN (revised strongly-constrained and appropriately-normed functional), rMGGAC (revised semilocal functional based on cuspless hydrogen model and Pauli kinetic energy density functional), mTASK (modified Aschebrock and Kümmel meta-GGA functional), and LMBJ (local modified Becke-Johnson) exchange-correlation functionals. Our results strongly suggest that these meta-GGA functionals for supercell calculations perform quite well, especially, when compared to computationally more demanding GW calculations. We also present band offsets calculated using ionization potentials and electron affinities, as well as band alignment via the branch point energies. Overall, our study shows that the aforementioned meta-GGA functionals can be used within the DFT framework to estimate the band offsets in semiconductor heterostructures with predictive accuracy. △ Less

Submitted 27 July, 2022; originally announced July 2022.

Dielectric function of CuBr$_\mathrm{x}$I$_{1-\mathrm{x}}$ alloy thin films

Authors: Michael Seifert, Evgeny Krüger, Michael S. Bar, Stefan Merker, Holger von Wenckstern, Harald Krautscheid, Marius Grundmann, Chris Sturm, Silvana Botti

Abstract: We study the dielectric function of CuBr$_\mathrm{x}$I$_{1-\mathrm{x}}$ thin film alloys using spectroscopic ellipsometry in the spectral range between 0.7 eV to 6.4 eV, in combination with first-principles calculations based on density functional theory. Through the comparison of theory and experiment, we attribute features in the dielectric function to electronic transitions at specific k-points… ▽ More We study the dielectric function of CuBr$_\mathrm{x}$I$_{1-\mathrm{x}}$ thin film alloys using spectroscopic ellipsometry in the spectral range between 0.7 eV to 6.4 eV, in combination with first-principles calculations based on density functional theory. Through the comparison of theory and experiment, we attribute features in the dielectric function to electronic transitions at specific k-points in the Brillouin zone. The observed bandgap bowing as a function of alloy composition is discussed in terms of different physical and chemical contributions. The band splitting at the top of the valence band due to spin-orbit coupling is found to decrease with increasing Br-concentration, from a value of 660 meV for CuI to 150 meV for CuBr. This result can be understood considering the contribution of copper d-orbitals to the valence band maximum as a function of the alloy composition. △ Less

Submitted 9 September, 2022; v1 submitted 4 July, 2022; originally announced July 2022.

Comments: Michael Seifert and Evgeny Krüger contributed equally. Some typos were corrected and references were added

Ensemble averages of ab initio optical, transport, and thermoelectric properties of hexagonal Si$_x$Ge$_{1-x}$ alloys

Authors: Pedro Borlido, Friedhelm Bechstedt, Silvana Botti, Claudia Rödl

Abstract: We present a comprehensive first-principles investigation of optical, transport, and thermoelectric properties of pure and doped hexagonal Si$_x$Ge$_{1-x}$ alloys based on density-functional theory calculations, the Boltzmann transport equation, and the generalized quasi-chemical approximation to obtain alloy averages of electronic properties. At low temperature, phase decomposition into the hexag… ▽ More We present a comprehensive first-principles investigation of optical, transport, and thermoelectric properties of pure and doped hexagonal Si$_x$Ge$_{1-x}$ alloys based on density-functional theory calculations, the Boltzmann transport equation, and the generalized quasi-chemical approximation to obtain alloy averages of electronic properties. At low temperature, phase decomposition into the hexagonal elementary crystals is thermodynamically favored, but around and above room temperature random alloys are predicted to be stable. While hexagonal Si has an indirect band gap, the gap of hexagonal Ge is direct with very weak optical transitions at the absorption edge. The alloy band gap remains direct for a Si content below 45\,\% and the oscillator strength of the lowest optical transitions is efficiently enhanced by alloying. The optical spectra show clear trends and both absorption edges and prominent peaks can be tuned with composition. The dependence of transport coefficients on carrier concentration and temperature is similar in cubic and hexagonal alloys. However, the latter display anisotropic response due to the reduced hexagonal symmetry. In particular, the transport mass exhibits a significant directional dependence. Seebeck coefficients and thermoelectric power factors of $n$-doped alloys show non-monotonous variations with the Si content independently of temperature. △ Less

Submitted 25 May, 2022; originally announced May 2022.

Band lineup at hexagonal Si$_x$Ge$_{1-x}$/Si$_y$Ge$_{1-y}$ alloy interfaces

Authors: Abderrezak Belabbes, Silvana Botti, Friedhelm Bechstedt

Abstract: The natural and true band profiles at heterojunctions formed by hexagonal Si$_x$Ge$_{1-x}$ alloys are investigated by a variety of methods: density functional theory for atomic geometries, approximate quasiparticle treatments for electronic structures, different band edge alignment procedures, and construction of various hexagonal unit cells to model alloys and heterojunctions. We demonstrate that… ▽ More The natural and true band profiles at heterojunctions formed by hexagonal Si$_x$Ge$_{1-x}$ alloys are investigated by a variety of methods: density functional theory for atomic geometries, approximate quasiparticle treatments for electronic structures, different band edge alignment procedures, and construction of various hexagonal unit cells to model alloys and heterojunctions. We demonstrate that the natural band offsets are rather unaffected by the choice to align the vacuum level or the branch point energy, as well as by the use of a hybrid or the Tran-Blaha functional. At interfaces between Ge-rich alloys we observe a type-I heterocharacter with direct band gaps, while Si-rich junctions are type-I but with an indirect band gap. The true band lineups at pseudomorphically grown heterostructures are strongly influenced by the generated biaxial strain of opposite sign in the two adjacent alloys. Our calculations show that the type-I character of the interface is reduced by strain. To prepare alloy heterojunctions suitable for active optoelectronic applications, we discuss how to decrease the compressive biaxial strain at Ge-rich alloys. △ Less

Submitted 6 May, 2022; originally announced May 2022.

Comments: 23 pages, 8 figures

Giant optical oscillator strengths in perturbed hexagonal germanium

Authors: Abderrezak Belabbes, Friedhelm Bechstedt, Silvana Botti

Abstract: We present ab initio calculations of electronic and optical properties of perturbed hexagonal germanium and demonstrate that it is a superior material for active optoelectronic devices in the infrared spectral region. It is known that perfect lonsdaleite Ge is a pseudodirect semiconductor, i.e., with direct fundamental band gap but almost vanishing oscillator strength for the lowest-energy optical… ▽ More We present ab initio calculations of electronic and optical properties of perturbed hexagonal germanium and demonstrate that it is a superior material for active optoelectronic devices in the infrared spectral region. It is known that perfect lonsdaleite Ge is a pseudodirect semiconductor, i.e., with direct fundamental band gap but almost vanishing oscillator strength for the lowest-energy optical transitions. Perturbing the system by replacing a Ge atom in the unit cell with a Si atom boosts of the oscillator strength at the minimum direct gap by orders of magnitude, with a concurrent blue shift of the interband distances. This effect is mainly due to the increased s character of the lowest conduction band because of the perturbation-induced wave function mixing. A purely structural modification of the lonsdaleite unit cell of hexagonal Ge yields as well increased optical oscillator strengths, but their magnitude significantly depends on the actual details of the atomic geometry. In particular, moderate tensile uniaxial strain can induce an inversion of the order of the two lowest conduction bands, immediately leading to an extremely efficient enhancement of optical transitions. In general, chemical and/or structural perturbations of the lonsdaleite lattice are shown to be the key to make hexagonal germanium suitable for light emitting devices. △ Less

Submitted 15 December, 2021; originally announced December 2021.

Electronic Structure and Epitaxy of CdTe Shells on InSb Nanowires

Authors: Ghada Badawy, Bomin Zhang, Tomáš Rauch, Jamo Momand, Sebastian Koelling, Jason Jung, Sasa Gazibegovic, Oussama Moutanabbir, Bart J. Kooi, Silvana Botti, Marcel A. Verheijen, Sergey M. Frolov, Erik P. A. M. Bakkers

Abstract: Indium antimonide (InSb) nanowires are used as building blocks for quantum devices because of their unique properties, i.e., strong spin-orbit interaction and large Landé g-factor. Integrating InSb nanowires with other materials could potentially unfold novel devices with distinctive functionality. A prominent example is the combination of InSb nanowires with superconductors for the emerging topol… ▽ More Indium antimonide (InSb) nanowires are used as building blocks for quantum devices because of their unique properties, i.e., strong spin-orbit interaction and large Landé g-factor. Integrating InSb nanowires with other materials could potentially unfold novel devices with distinctive functionality. A prominent example is the combination of InSb nanowires with superconductors for the emerging topological particles research. Here, we combine the II-VI cadmium telluride (CdTe) with the III-V InSb in the form of core-shell (InSb-CdTe) nanowires and explore potential applications based on the electronic structure of the InSb-CdTe interface and the epitaxy of CdTe on the InSb nanowires. We determine the electronic structure of the InSb-CdTe interface using density functional theory and extract a type-I band alignment with a small conduction band offset ($\leq$ 0.3 eV). These results indicate the potential application of these shells for surface passivation or as tunnel barriers in combination with superconductors. In terms of the structural quality of these shells, we demonstrate that the lattice-matched CdTe can be grown epitaxially on the InSb nanowires without interfacial strain or defects. These epitaxial shells do not introduce disorder to the InSb nanowires as indicated by the comparable field-effect mobility we measure for both uncapped and CdTe-capped nanowires. △ Less

Submitted 9 November, 2021; originally announced November 2021.

Machine-learning correction to density-functional crystal structure optimization

Authors: Robert Hussein, Jonathan Schmidt, Tomás Barros, Miguel A. L. Marques, Silvana Botti

Abstract: Density functional theory is routinely applied to predict crystal structures. The most common exchange-correlation functionals used to this end are the Perdew-Burke-Ernzerhof (PBE) approximation and its variant PBEsol. We investigate the performance of these functionals for the prediction of lattice parameters and show how to enhance their accuracy using machine learning. Our dataset is constitute… ▽ More Density functional theory is routinely applied to predict crystal structures. The most common exchange-correlation functionals used to this end are the Perdew-Burke-Ernzerhof (PBE) approximation and its variant PBEsol. We investigate the performance of these functionals for the prediction of lattice parameters and show how to enhance their accuracy using machine learning. Our dataset is constituted by experimental crystal structures of the Inorganic Crystal Structure Database matched with PBE-optmized structures stored in the materials project database. We complement these data with PBEsol calculations. We demonstrate that the accuracy and precision of PBE/PBEsol volume predictions can be noticeably improved a posteriori by employing simple, explainable machine learning models. These models can improve PBE unit cell volumes to match the accuracy of PBEsol calculations, and reduce the error of the latter with respect to experiment by 35%. Further, the error of PBE lattice constants is reduced by a factor of 3--5. A further benefit of our approach is the implicit correction of finite temperature effects without performing phonon calculations. △ Less

Submitted 3 November, 2021; originally announced November 2021.

Comments: 62 pages, 5 figures, 3 tables

Journal ref: MRS Bulletin (2022)

Bandgap of two-dimensional materials: Thorough assessment of modern exchange-correlation functionals

Authors: Fabien Tran, Jan Doumont, Leila Kalantari, Peter Blaha, Tomáš Rauch, Pedro Borlido, Silvana Botti, Miguel A. L. Marques, Abhilash Patra, Subrata Jana, Prasanjit Samal

Abstract: The density functional theory (DFT) approximations that are the most accurate for the calculation of band gap of bulk materials are hybrid functionals like HSE06, the MBJ potential, and the GLLB-SC potential. More recently, generalized gradient approximations (GGA), like HLE16, or meta-GGAs, like (m)TASK, have proven to be also quite accurate for the band gap. Here, the focus is on 2D materials an… ▽ More The density functional theory (DFT) approximations that are the most accurate for the calculation of band gap of bulk materials are hybrid functionals like HSE06, the MBJ potential, and the GLLB-SC potential. More recently, generalized gradient approximations (GGA), like HLE16, or meta-GGAs, like (m)TASK, have proven to be also quite accurate for the band gap. Here, the focus is on 2D materials and the goal is to provide a broad overview of the performance of DFT functionals by considering a large test set of 298 2D systems. The present work is an extension of our recent studies [Rauch et al., Phys. Rev. B 101, 245163 (2020) and Patra et al., J. Phys. Chem. C 125, 11206 (2021)]. Due to the lack of experimental results for the band gap of 2D systems, $G_{0}W_{0}$ results were taken as reference. It is shown that the GLLB-SC potential and mTASK functional provide the band gaps that are the closest to $G_{0}W_{0}$. Following closely, the local MBJ potential has a pretty good accuracy that is similar to the accuracy of the more expensive hybrid functional HSE06. △ Less

Submitted 3 January, 2022; v1 submitted 25 May, 2021; originally announced May 2021.

Journal ref: J. Chem. Phys. 155, 104103 (2021)

From pseudo-direct hexagonal germanium to direct silicon-germanium alloys

Authors: Pedro Borlido, Jens Renè Suckert, Jürgen Furthmüller, Friedhelm Bechstedt, Silvana Botti, Claudia Rödl

Abstract: We present ab initio calculations of the electronic and optical properties of hexagonal SiGe alloys in the lonsdaleite structure. Lattice constants and electronic band structures in excellent agreement with experiment are obtained using density-functional theory. Hexagonal Si has an indirect band gap, while hexagonal Ge has a pseudo-direct gap, i.e. the optical transitions at the minimum direct ba… ▽ More We present ab initio calculations of the electronic and optical properties of hexagonal SiGe alloys in the lonsdaleite structure. Lattice constants and electronic band structures in excellent agreement with experiment are obtained using density-functional theory. Hexagonal Si has an indirect band gap, while hexagonal Ge has a pseudo-direct gap, i.e. the optical transitions at the minimum direct band gap are very weak. The pseudo-direct character of pure hexagonal Ge is efficiently lifted by alloying. Already for a small admixture of Si, symmetry reduction enhances the oscillator strength of the lowest direct optical transitions. The band gap is direct for a Si content below 45 %. We validate lonsdaleite group-IV alloys to be efficient optical emitters, suitable for integrated optoelectronic applications. △ Less

Submitted 5 May, 2021; originally announced May 2021.

Absorption mechanism of dopamine/DOPAC modified TiO 2 nanoparticles by time-dependent density functional theory calculations

Authors: Costanza Ronchi, Federico Soria, Lorenzo Ferraro, Silvana Botti, Cristiana Di Valentin

Abstract: Donor-modified TiO 2 nanoparticles are interesting hybrid systems shifting the absorption edge of this semiconductor from the ultra-violet to the visible or infrared light spectrum, which is a benefit for several applications ranging from photochemistry, photocatalysis, photovoltaics, or photodynamic therapy. Here, we investigate the absorption properties of two catechol-like molecules, i.e. dopam… ▽ More Donor-modified TiO 2 nanoparticles are interesting hybrid systems shifting the absorption edge of this semiconductor from the ultra-violet to the visible or infrared light spectrum, which is a benefit for several applications ranging from photochemistry, photocatalysis, photovoltaics, or photodynamic therapy. Here, we investigate the absorption properties of two catechol-like molecules, i.e. dopamine and DOPAC ligands, when anchored to a spherical anatase TiO 2 nanoparticle of realistic size (2.2 nm), by means of time-dependent density functional theory calculations. By the differential absorbance spectra with the bare nanoparticle, we show how it is possible to determine the injection mechanism. Since new low-energy absorption peaks are observed, we infer a direct charge transfer injection, which, unexpectedly, does not involve the lowest energy conduction band states. We also find that the more perpendicular the molecular benzene ring is to the surface, the more intense is the absorption, which suggests aiming at high molecular packing in the synthesis. Through a comparative investigation with a flat TiO 2 surface model, we unravel both the curvature and coverage effects. △ Less

Submitted 27 October, 2020; v1 submitted 22 October, 2020; originally announced October 2020.

Stable ordered phases of cuprous iodide with complexes of copper vacancies

Authors: Stefan Jaschik, Mário R. G. Marques, Michael Seifert, Claudia Rödl, Silvana Botti, Miguel A. L. Marques

Abstract: We perform an exhaustive theoretical study of the phase diagram of Cu-I binaries, focusing on Cu-poor compositions, relevant for p-type transparent conduction. We find that the interaction between neighboring Cu vacancies is the determining factor that stabilizes non-stoichiometric zincblende phases. This interaction leads to defect complexes where Cu vacancies align preferentially along the [100]… ▽ More We perform an exhaustive theoretical study of the phase diagram of Cu-I binaries, focusing on Cu-poor compositions, relevant for p-type transparent conduction. We find that the interaction between neighboring Cu vacancies is the determining factor that stabilizes non-stoichiometric zincblende phases. This interaction leads to defect complexes where Cu vacancies align preferentially along the [100] crystallographic direction. It turns out that these defect complexes have an important influence on hole conductivity, as they lead to dispersive conducting $p$-states that extend up to around 0.8 eV above the Fermi level. We furthermore observe a characteristic peak in the density of electronic states, which could provide an experimental signature for this type of defect complexes. △ Less

Submitted 14 September, 2020; originally announced September 2020.

Journal ref: Chem. Mater. 31, 7877-7882 (2019)

Efficient strain-induced light emission in lonsdaleite germanium

Authors: Jens René Suckert, Claudia Rödl, Jürgen Furthmüller, Friedhelm Bechstedt, Silvana Botti

Abstract: Lonsdaleite germanium has a direct band gap, but it is not an efficient light emitter due to the vanishing oscillator strength of electronic transitions at the fundamental gap. Transitions involving the second lowest conduction band are instead at least three orders of magnitude stronger. The inversion of the two lowest conduction bands would therefore make hexagonal germanium ideal for optoelectr… ▽ More Lonsdaleite germanium has a direct band gap, but it is not an efficient light emitter due to the vanishing oscillator strength of electronic transitions at the fundamental gap. Transitions involving the second lowest conduction band are instead at least three orders of magnitude stronger. The inversion of the two lowest conduction bands would therefore make hexagonal germanium ideal for optoelectronic applications. In this work, we investigate the possibility to achieve this band inversion by applying strain. To this end we perform ab initio calculations of the electronic band structure and optical properties of strained hexagonal germanium, using density functional theory with the modified Becke-Johnson exchange-correlation functional and including spin-orbit interaction. We consider hydrostatic pressure, uniaxial strain along the hexagonal c axis, as well as biaxial strain in planes perpendicular to and containing the hexagonal c axis to simulate the effect of a substrate. We find that the conduction-band inversion, and therefore the transition from a pseudo-direct to a direct band gap, is attainable for moderate tensile uniaxial strain parallel to the lonsdaleite c axis. △ Less

Submitted 16 March, 2021; v1 submitted 14 September, 2020; originally announced September 2020.

Journal ref: Phys. Rev. Materials 5, 024602 (2021)

First-principles identification of single photon emitters based on carbon clusters in hexagonal boron nitride

Authors: Cesar Jara, T. Rauch, Silvana Botti, Miguel A. L. Marques, A. Norambuena, R. Coto, J. R. Maze, F. Munoz

Abstract: A recent study associate carbon with single photon emitters (SPEs) in hexagonal boron nitride (h-BN). This observation, together with the high mobility of carbon in h-BN suggest the existence of SPEs based on carbon clusters. Here, by means of density-functional theory calculations we studied clusters of substitutional carbon atoms up to tetramers in hexagonal boron nitride. Two different conforma… ▽ More A recent study associate carbon with single photon emitters (SPEs) in hexagonal boron nitride (h-BN). This observation, together with the high mobility of carbon in h-BN suggest the existence of SPEs based on carbon clusters. Here, by means of density-functional theory calculations we studied clusters of substitutional carbon atoms up to tetramers in hexagonal boron nitride. Two different conformations of neutral carbon trimers have zero-point line energies and shifts of the phonon sideband compatible with typical photoluminescence spectra. Moreover, some conformations of two small C clusters next to each other result in photoluminescence spectra similar to those found in experiments. We also showed that vacancies are unable to reproduce the typical features of the phonon sideband observed in most measurements due to the large spectral weight of low-energy breathing modes, ubiquitous in such defects. △ Less

Submitted 31 July, 2020; originally announced July 2020.

Accurate electronic band gaps of two-dimensional materials from the local modified Becke-Johnson potential

Authors: Tomáš Rauch, Miguel A. L. Marques, Silvana Botti

Abstract: The electronic band structures of two-dimensional materials are significantly different from those of their bulk counterparts, due to quantum confinement and strong modifications of electronic screening. An accurate determination of electronic states is a prerequisite to design electronic or optoelectronic applications of two-dimensional materials, however, most of the theoretical methods we have… ▽ More The electronic band structures of two-dimensional materials are significantly different from those of their bulk counterparts, due to quantum confinement and strong modifications of electronic screening. An accurate determination of electronic states is a prerequisite to design electronic or optoelectronic applications of two-dimensional materials, however, most of the theoretical methods we have available to compute band gaps are either inaccurate, computationally expensive, or only applicable to bulk systems. Here we show that reliable band structures of nanostructured systems can now be efficiently calculated using density-functional theory with the local modified Becke-Johnson exchange-correlation functional that we recently proposed. After re-optimizing the parameters of this functional specifically for two-dimensional materials, we show, for a test set of almost 300 systems, that the obtained band gaps are of comparable quality as those obtained using the best hybrid functionals, but at a very reduced computational cost. These results open the way for accurate high-throughput studies of band-structures of two-dimensional materials and for the study of van der Waals heterostructures with large unit cells. △ Less

Submitted 16 April, 2020; originally announced April 2020.

Journal ref: Phys. Rev. B 101, 245163 (2020)

Validation of pseudopotential calculations for the electronic band gap of solids

Authors: Pedro Borlido, Jan Doumont, Fabien Tran, Miguel Marques, Silvana Botti

Abstract: Nowadays pseudopotential density-functional theory calculations constitute the standard approach to tackle solid-state electronic problems. These rely on distributed pseudopotential tables that were built from all-electron atomic calculations using few popular semi-local exchange-correlation functionals, while pseudopotentials based on more modern functionals, like meta-GGA and hybrid functional… ▽ More Nowadays pseudopotential density-functional theory calculations constitute the standard approach to tackle solid-state electronic problems. These rely on distributed pseudopotential tables that were built from all-electron atomic calculations using few popular semi-local exchange-correlation functionals, while pseudopotentials based on more modern functionals, like meta-GGA and hybrid functionals, or for many-body methods, such as $GW$, are often not available. Because of this, employing pseudopotentials created with inconsistent exchange-correlation functionals has become a common practice. Our aim is to quantify systematically the error in the determination of the electronic band gap when cross-functional pseudopotential calculations are performed. To this end we compare band gaps obtained with norm-conserving pseudopotentials or the projector-augmented wave method with all-electron calculations for a large dataset of 473 solids. We focus in particular on density functionals that were designed specifically for band-gap calculations. On average, the absolute error is about 0.1 eV, yielding absolute relative errors in the 5-10\% range. Considering that typical errors stemming from the choice of the functional are usually larger, we conclude that the effect of choosing an inconsistent pseudopotential is rather harmless for most applications. However, we find specific cases where absolute errors can be larger than 1 eV, or others where relative errors can amount to a large fraction of the band gap. △ Less

Submitted 23 March, 2020; originally announced March 2020.

Direct Bandgap Emission from Hexagonal Ge and SiGe Alloys

Authors: E. M. T. Fadaly, A. Dijkstra, J. R. Suckert, D. Ziss, M. A. J. v. Tilburg, C. Mao, Y. Ren, V. T. v. Lange, S. Kölling, M. A. Verheijen, D. Busse, C. Rödl, J. Furthmüller, F. Bechstedt, J. Stangl, J. J. Finley, S. Botti, J. E. M. Haverkort, E. P. A. M. Bakkers

Abstract: Silicon crystallized in the usual cubic (diamond) lattice structure has dominated the electronics industry for more than half a century. However, cubic silicon (Si), germanium (Ge) and SiGe-alloys are all indirect bandgap semiconductors that cannot emit light efficiently. Accordingly, achieving efficient light emission from group-IV materials has been a holy grail in silicon technology for decades… ▽ More Silicon crystallized in the usual cubic (diamond) lattice structure has dominated the electronics industry for more than half a century. However, cubic silicon (Si), germanium (Ge) and SiGe-alloys are all indirect bandgap semiconductors that cannot emit light efficiently. Accordingly, achieving efficient light emission from group-IV materials has been a holy grail in silicon technology for decades and, despite tremendous efforts, it has remained elusive. Here, we demonstrate efficient light emission from direct bandgap hexagonal Ge and SiGe alloys. We measure a subnanosecond, temperature-insensitive radiative recombination lifetime and observe a similar emission yield to direct bandgap III-V semiconductors. Moreover, we demonstrate how by controlling the composition of the hexagonal SiGe alloy, the emission wavelength can be continuously tuned in a broad range, while preserving a direct bandgap. Our experimental findings are shown to be in excellent quantitative agreement with the ab initio theory. Hexagonal SiGe embodies an ideal material system to fully unite electronic and optoelectronic functionalities on a single chip, opening the way towards novel device concepts and information processing technologies. △ Less

Submitted 2 November, 2019; originally announced November 2019.

Comments: 25 pages,5 main figures, 7 supplementary figures

Local modified Becke-Johnson exchange-correlation potential for interfaces, surfaces, and two-dimensional materials

Authors: Tomáš Rauch, Miguel A. L. Marques, Silvana Botti

Abstract: The modified Becke-Johnson meta-GGA potential of density functional theory has been shown to be the best exchange-correlation potential to determine band gaps of crystalline solids. However, it cannot be consistently used for the electronic structure of non-periodic or nanostructured systems. We propose an extension of this potential that enables its use to study heterogeneous, finite and low-dime… ▽ More The modified Becke-Johnson meta-GGA potential of density functional theory has been shown to be the best exchange-correlation potential to determine band gaps of crystalline solids. However, it cannot be consistently used for the electronic structure of non-periodic or nanostructured systems. We propose an extension of this potential that enables its use to study heterogeneous, finite and low-dimensional systems. This is achieved by using a coordinate-dependent expression for the parameter $c$ that weights the Becke-Russel exchange, in contrast to the original global formulation, where $c$ is just a fitted number. Our potential takes advantage of the excellent description of band gaps provided by the modified Becke-Johnson potential and preserves its modest computational effort. Furthermore, it yields with one single calculation band diagrams and band offsets of heterostructures and surfaces. We exemplify the usefulness and efficiency of our local meta-GGA potential by testing it for a series of interfaces (Si/SiO$_2$, AlAs/GaAs, AlP/GaP, and GaP/Si), a Si surface, and boron nitride monolayer. △ Less

Submitted 24 February, 2020; v1 submitted 1 November, 2019; originally announced November 2019.

On the calculation of the bandgap of periodic solids with MGGA functionals using the total energy

Authors: Fabien Tran, Jan Doumont, Peter Blaha, Miguel A. L. Marques, Silvana Botti, Albert P. Bartók

Abstract: During the last few years, it has become more and more clear that functionals of the meta generalized gradient approximation (MGGA) are more accurate than GGA functionals for the geometry and energetics of electronic systems. However, MGGA functionals are also potentially more interesting for the electronic structure, in particular when the potential is non-multiplicative (i.e., when MGGAs are imp… ▽ More During the last few years, it has become more and more clear that functionals of the meta generalized gradient approximation (MGGA) are more accurate than GGA functionals for the geometry and energetics of electronic systems. However, MGGA functionals are also potentially more interesting for the electronic structure, in particular when the potential is non-multiplicative (i.e., when MGGAs are implemented in the generalized Kohn-Sham framework), which may help to get more accurate bandgaps. Here, we show that the calculation of bandgap of solids with MGGA functionals can be done very accurately also in a non-self-consistent manner. This scheme uses only the total energy and can, therefore, be very useful when the self-consistent implementation of a particular MGGA functional is not available. Since self-consistent MGGA calculations may be difficult to converge, the non-self-consistent scheme may also help to speed-up the calculations. Furthermore, it can be applied to any other types of functionals, for which the implementation of the corresponding potential is not trivial. △ Less

Submitted 1 November, 2019; v1 submitted 2 September, 2019; originally announced September 2019.

Journal ref: J. Chem. Phys. 151, 161102 (2019)

Accurate electronic and optical properties of hexagonal germanium for optoelectronic applications

Authors: Claudia Rödl, Jürgen Furthmüller, Jens Renè Suckert, Valerio Armuzza, Friedhelm Bechstedt, Silvana Botti

Abstract: High-quality defect-free lonsdaleite Si and Ge can now be grown on hexagonal nanowire substrates. These hexagonal phases of group-IV semiconductors have been predicted to exhibit improved electronic and optical properties for optoelectronic applications. While lonsdaleite Si is a well-characterized indirect semiconductor, experimental data and reliable calculations on lonsdaleite Ge are scarce and… ▽ More High-quality defect-free lonsdaleite Si and Ge can now be grown on hexagonal nanowire substrates. These hexagonal phases of group-IV semiconductors have been predicted to exhibit improved electronic and optical properties for optoelectronic applications. While lonsdaleite Si is a well-characterized indirect semiconductor, experimental data and reliable calculations on lonsdaleite Ge are scarce and not consistent regarding the nature of its gap. Using ab initio density-functional theory, we calculate accurate structural, electronic, and optical properties for hexagonal Ge. Given the well-known sensitivity of electronic-structure calculations for Ge to the underlying approximations, we systematically test the performance of several exchange-correlation functionals, including meta-GGA and hybrid functionals. We first validate our approach for cubic Ge, obtaining atomic geometries and band structures in excellent agreement with available experimental data. Then, the same approach is applied to predict electronic and optical properties of lonsdaleite Ge. We portray lonsdaleite Ge as a direct semiconductor with only weakly dipole-active lowest optical transitions, small band gap, huge crystal-field splitting, and strongly anisotropic effective masses. The unexpectedly small direct gap and the oscillator strengths of the lowest optical transitions are explained in terms of symmetry and back-folding of energy bands of the diamond structure. △ Less

Submitted 5 December, 2018; originally announced December 2018.

Journal ref: Phys. Rev. Materials 3, 034602 (2019)

Low-density silicon allotropes for photovoltaic applications

Authors: Maximilian Amsler, Silvana Botti, Miguel A. L. Marques, Thomas J. Lenosky, Stefan Goedecker

Abstract: Silicon materials play a key role in many technologically relevant fields, ranging from the electronic to the photovoltaic industry. A systematic search for silicon allotropes was performed by employing a modified ab initio minima hopping crystal structure prediction method. The algorithm was optimized to specifically investigate the hitherto barely explored low-density regime of the silicon phase… ▽ More Silicon materials play a key role in many technologically relevant fields, ranging from the electronic to the photovoltaic industry. A systematic search for silicon allotropes was performed by employing a modified ab initio minima hopping crystal structure prediction method. The algorithm was optimized to specifically investigate the hitherto barely explored low-density regime of the silicon phase diagram by imitating the guest-host concept of clathrate compounds. In total 44 metastable phases are presented, of which 11 exhibit direct or quasi-direct band-gaps in the range of $\approx$1.0-1.8 eV, close to the optimal Shockley-Queisser limit of $\approx$1.4 eV, with a stronger overlap of the absorption spectra with the solar spectrum compared to conventional diamond silicon. Due to the structural resemblance to known clathrate compounds it is expected that the predicted phases can be synthesized. △ Less

Submitted 28 April, 2015; v1 submitted 23 April, 2015; originally announced April 2015.

Identification of novel Cu, Ag, and Au ternary oxides from global structural prediction

Authors: Tiago F. T. Cerqueira, Sun Lin, Maximilian Amsler, Stefan Goedecker, Silvana Botti, Miguel A. L. Marques

Abstract: We use ab initio global structural prediction, and specifically the minima hopping method, to explore the periodic table in search of novel oxide phases. In total, we study 183 different compositions of the form MXO2, where M=(Cu, Ag, Au) and X is an element of the periodic table. This set includes the well-known Cu delafossite compounds that are, up to now, the best p-type transparent conductive… ▽ More We use ab initio global structural prediction, and specifically the minima hopping method, to explore the periodic table in search of novel oxide phases. In total, we study 183 different compositions of the form MXO2, where M=(Cu, Ag, Au) and X is an element of the periodic table. This set includes the well-known Cu delafossite compounds that are, up to now, the best p-type transparent conductive oxides known to mankind. Our calculations discover 81 stable compositions, out of which only 36 are included in available databases. Some of these new phases are potentially good candidates for transparent electrodes. These results demonstrate, on one hand, how incomplete is still our knowledge of the phase-space of stable ternary materials. On the other hand, we show that structural prediction combined with high-throughput approaches is a powerful tool to extend that knowledge, paving the way for the experimental discovery of new materials on a large scale. △ Less

Submitted 25 March, 2015; originally announced March 2015.

Estimating Excitonic Effects in the Absorption Spectra of Solids: Problems and Insight from a Guided Iteration Scheme

Authors: Santiago Rigamonti, Silvana Botti, Valérie Veniard, Claudia Draxl, Lucia Reining, Francesco Sottile

Abstract: A major obstacle for computing optical spectra of solids is the lack of reliable approximations for capturing excitonic effects within time-dependent density-functional theory. We show that the trustful prediction of strongly bound electron-hole pairs within this framework using simple approximations is still a challenge and that available promising results have to be revisited. Deriving a set of… ▽ More A major obstacle for computing optical spectra of solids is the lack of reliable approximations for capturing excitonic effects within time-dependent density-functional theory. We show that the trustful prediction of strongly bound electron-hole pairs within this framework using simple approximations is still a challenge and that available promising results have to be revisited. Deriving a set of analytical formula we analyze and explain the difficulties. We deduce an alternative approximation from an iterative scheme guided by previously available knowledge, significantly improving the description of exciton binding energies. Finally, we show how one can "read" exciton binding energies from spectra determined in the random phase approximation, without any further calculation. △ Less

Submitted 26 March, 2015; v1 submitted 29 November, 2014; originally announced December 2014.

Comments: 5 pages, 2 figures plus supplemental material

Conducting boron sheets formed by the reconstruction of the α-boron (111) surface

Authors: Maximilian Amsler, Silvana Botti, Miguel A. L. Marques, Stefan Goedecker

Abstract: Systematic ab initio structure prediction was applied for the first time to predict low energy surface reconstructions by employing the minima hopping method on the α-boron (111) surface. Novel reconstruction geometries were identified and carefully characterized in terms of structural and electronic properties. Our calculations predict the formation of a planar, mono-layer sheet at the surface, w… ▽ More Systematic ab initio structure prediction was applied for the first time to predict low energy surface reconstructions by employing the minima hopping method on the α-boron (111) surface. Novel reconstruction geometries were identified and carefully characterized in terms of structural and electronic properties. Our calculations predict the formation of a planar, mono-layer sheet at the surface, which is responsible for conductive surface states. Furthermore, the isolated boron sheet is shown to be the ground state 2D-structure in vacuum at a hole density of η=1/5 and is therefore a potential candidate as a precursor for boron nano-structures. △ Less

Submitted 1 July, 2013; originally announced July 2013.

First-principles predicted low-energy structures of NaSc(BH4)4

Authors: Tran Doan Huan, Maximilian Amsler, Silvana Botti, Miguel A. L. Marques, Stefan Goedecker

Abstract: According to previous interpretations of experimental data, sodium-scandium double-cation borohydride NaSc(BH$_4$)$_4$ crystallizes in the crystallographic space group $Cmcm$ where each sodium (scandium) atom is surrounded by six scandium (sodium) atoms. A careful investigation of this phase based on \textit{ab initio} calculations indicates that the structure is dynamically unstable and gives ris… ▽ More According to previous interpretations of experimental data, sodium-scandium double-cation borohydride NaSc(BH$_4$)$_4$ crystallizes in the crystallographic space group $Cmcm$ where each sodium (scandium) atom is surrounded by six scandium (sodium) atoms. A careful investigation of this phase based on \textit{ab initio} calculations indicates that the structure is dynamically unstable and gives rise to an energetically and dynamically more favorable phase with $C222_1$ symmetry and nearly identical x-ray diffraction pattern. By additionally performing extensive structural searches with the minima-hopping method we discover a class of new low-energy structures exhibiting a novel structural motif in which each sodium (scandium) atom is surrounded by four scandium (sodium) atoms arranged at the corners of either a rectangle with nearly equal sides or a tetrahedron. These new phases are all predicted to be insulators with band gaps of $7.9-8.2$ eV. Finally, we estimate the influence of these structures on the hydrogen-storage performance of NaSc(BH$_4$)$_4$. △ Less

Submitted 29 March, 2014; v1 submitted 8 June, 2013; originally announced June 2013.

Comments: Version published

Journal ref: J. Chem. Phys. 140, 124708 (2014)