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Strain-tunable anomalous Hall effect in hexagonal MnTe
Authors:
Zhaoyu Liu,
Sijie Xu,
Jonathan M. DeStefano,
Elliott Rosenberg,
Tingjun Zhang,
Jinyulin Li,
Matthew B. Stone,
Feng Ye,
Rong Cong,
Siyu Pan,
Ching-Wu Chu,
Liangzi Deng,
Emilia Morosan,
Rafael M. Fernandes,
Jiun-Haw Chu,
Pengcheng Dai
Abstract:
The ability to control and manipulate time-reversal ($T$) symmetry-breaking phases with near-zero net magnetization is a sought-after goal in spintronic devices. The recently discovered hexagonal altermagnet manganese telluride ($α$-MnTe) is a prime example. It has a compensated altermagnetic ground state where the magnetic moments are aligned in each layer and stacked antiparallel along the $c$ a…
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The ability to control and manipulate time-reversal ($T$) symmetry-breaking phases with near-zero net magnetization is a sought-after goal in spintronic devices. The recently discovered hexagonal altermagnet manganese telluride ($α$-MnTe) is a prime example. It has a compensated altermagnetic ground state where the magnetic moments are aligned in each layer and stacked antiparallel along the $c$ axis, yet it exhibits a spontaneous anomalous Hall effect (AHE) that breaks the $T$-symmetry with a vanishingly small $c$-axis ferromagnetic (FM) moment. However, the presence of three 120$^\circ$ separated in-plane magnetic domains presents a challenge in understanding the origin of the AHE and the effective control of the altermagnetic state. Here we use neutron scattering to show that a compressive uniaxial strain along the next-nearest-neighbor Mn-Mn bond direction detwins $α$-MnTe into a single in-plane magnetic domain, aligning the in-plane moments along the same axis. Furthermore, we find that uniaxial strain (-0.2% to 0.1%) significantly sharpens the magnetic hysteresis loop and switches the sign of the AHE near room temperature. Remarkably, this is achieved without altering the altermagnetic phase-transition temperature or substantially changing the small $c$-axis FM moment. Combined with our phenomenological model, we argue that these effects result from the modification of the electronic Berry curvature by a combination of both spin-orbit coupling and strain. Our work not only unambiguously establishes the relationship between the in-plane moment direction and the AHE in $α$-MnTe but also paves the way for future applications in highly scalable, strain-tunable magnetic sensors and spintronic devices.
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Submitted 15 October, 2025; v1 submitted 23 September, 2025;
originally announced September 2025.
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Gauge flux generations of weakly magnetized Dirac spin liquid in a kagomé lattice
Authors:
Si-Yu Pan,
Jiahao Yang,
Gang v. Chen
Abstract:
Inspired by the recent progress on the Dirac spin liquid and the kagomé lattice antiferromagnets, we revisit the U(1) Dirac spin liquid on the kagomé lattice and consider the response of this quantum state to the weak magnetic field by examining the matter-gauge coupling. Even though the system is in the strong Mott insulating regime, the Zeeman coupling could induce the internal U(1) gauge flux w…
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Inspired by the recent progress on the Dirac spin liquid and the kagomé lattice antiferromagnets, we revisit the U(1) Dirac spin liquid on the kagomé lattice and consider the response of this quantum state to the weak magnetic field by examining the matter-gauge coupling. Even though the system is in the strong Mott insulating regime, the Zeeman coupling could induce the internal U(1) gauge flux with the assistance of the Dzyaloshinskii-Moriya interaction. In addition to the perturbatively-induced non-uniform flux from the microscopic interactions, the system spontaneously generates the uniform U(1) gauge flux in a non-perturbative fashion to create the spinon Landau levels and thus gains the kinetic energy for the spinon matters. Renormalized mean-field theory is employed to validate these two flux generation mechanisms. The resulting state is argued to be an ordered antiferromagnet with the in-plane magnetic order, and the gapless Goldstone mode behaves like the gapless gauge boson and the spinons appear at higher energies. The dynamic properties of this antiferromagnet, and the implication for other matter-gauge-coupled systems are discussed.
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Submitted 28 November, 2025; v1 submitted 20 August, 2025;
originally announced August 2025.
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Highly reliable, ultra-wideband, isolator-free quantum-dot mode-locked frequency combs for optical interconnects beyond 3.2Tb/s
Authors:
Shujie Pan,
Victoria Cao,
Yiheng Feng,
Dingyi Wu,
Jie Yan,
Junjie Yang,
Chao Zhao,
Xi Xiao,
Siming Chen
Abstract:
Quantum dot mode-locked laser-based optical frequency combs are emerging as a critical solution for achieving low-cost, high-efficiency, and large-capacity optical interconnects. The practical implementation of wavelength division multiplexing interconnects necessitates a temperature-stable OFC source with a minimum 100 GHz channel spacing to enable high-bandwidth modulation while mitigating the c…
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Quantum dot mode-locked laser-based optical frequency combs are emerging as a critical solution for achieving low-cost, high-efficiency, and large-capacity optical interconnects. The practical implementation of wavelength division multiplexing interconnects necessitates a temperature-stable OFC source with a minimum 100 GHz channel spacing to enable high-bandwidth modulation while mitigating the complexity of optical filtering and detection. By leveraging the advanced co-doping technique and a colliding pulse mode-locking scheme, here, we report a compact, ultra-wideband, highly reliable, isolator-free 100 GHz-spacing InAs/GaAs QD OFC source operating up to a record temperature of 140 °C. The comb source delivers a record 3 dB optical bandwidth of 14.312 nm, containing flat-top comb lines, each supporting 128 Gb/s PAM-4 modulation, which results in a total throughput of 3.328 Tb/s with an extremely low power consumption of 0.394 pJ/bit at 25°C. Performance remains stable at 85 °C, with negligible degradation of device critical metrics. Remarkably, accelerated aging tests under harsh conditions (85 °C with 8x threshold current injection) revealed a mean time to failure of approximately 207 years. The QD OFC source demonstrated in this work, for the first time, establishes a concrete link between fundamental research on comb sources and their practical deployment in next-generation, high-density optical interconnect systems.
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Submitted 2 June, 2025;
originally announced June 2025.
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Origin of second harmonic generation in non-centrosymmetric crystal structures containing lone-pairs electrons
Authors:
Fuming Li,
Shilie Pan,
Zhihua Yang
Abstract:
Material systems with lone-pair electrons have long been a treasure trove in the search for large second harmonic generation effects. Revealing the origin of second harmonic generation in nonlinear optical materials can provide theoretical guidance for the design of new materials. In this work, the origin of second harmonic generation in non-centrosymmetric materials containing lone pair electrons…
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Material systems with lone-pair electrons have long been a treasure trove in the search for large second harmonic generation effects. Revealing the origin of second harmonic generation in nonlinear optical materials can provide theoretical guidance for the design of new materials. In this work, the origin of second harmonic generation in non-centrosymmetric materials containing lone pair electrons is revealed by analyzing the orbital interactions on the sublattice. Stereochemically inactive Pb 6\textit{s} orbitals with high symmetry in CsPbCO3F contribute less to the second harmonic generation. In contrast, the contribution of stereochemically active Pb 6s orbital in PbB5O7F3 and PbB2O3F2 is more obvious. Significantly, the orbitals of the interaction between lead and oxygen make a very significant contribution because these orbitals are located at the band edge and in non-centrosymmetric sublattices.
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Submitted 10 May, 2025; v1 submitted 10 March, 2025;
originally announced March 2025.
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A full breakthrough in vacuum ultraviolet nonlinear optical performance of NH4B4O6F
Authors:
Fangfang Zhang,
Zilong Chen,
Chen Cui,
Zhihua Yang,
Miriding Mutailipu,
Fuming Li,
Xueling Hou,
Xifa Long,
Shilie Pan
Abstract:
The lack of suitable vacuum ultraviolet (VUV) nonlinear optical (NLO) crystals has hindered the development of compact, high-power VUV sources via second harmonic generation (SHG). Here, we report on the development of the fluorooxoborate crystal NH4B4O6F (ABF) as a promising material for VUV light generation. For the first time, devices with specific phase-matching angles were constructed, achiev…
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The lack of suitable vacuum ultraviolet (VUV) nonlinear optical (NLO) crystals has hindered the development of compact, high-power VUV sources via second harmonic generation (SHG). Here, we report on the development of the fluorooxoborate crystal NH4B4O6F (ABF) as a promising material for VUV light generation. For the first time, devices with specific phase-matching angles were constructed, achieving a record 158.9 nm VUV light through phase-matching SHG and a maximum nanosecond pulse energy of 4.8 mJ at 177.3 nm with a conversion efficiency of 5.9 %. The enhanced NLO performance is attributed to optimized arrangements of fluorine-based units creating asymmetric sublattices. This work marks a significant milestone in the field of NLO materials, facilitating the future applications of compact, high-power VUV lasers utilizing ABF.
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Submitted 6 March, 2025;
originally announced March 2025.
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Fermiology with nodal structures in nonsymmorphic superconductor LaNiGa$_2$: A de Haas-van Alphen study
Authors:
Houpu Li,
Ye Yang,
Mengzhu Shi,
Yingcai Qian,
Senyang Pan,
Kaibao Fan,
Nan Zhang,
Kaixin Tang,
Hongyu Li,
Zhiwei Wang,
Jinglei Zhang,
Chuanying Xi,
Ziji Xiang,
Xianhui Chen
Abstract:
Topological metals possess various types of symmetry-protected degenerate band crossings. When a topological metal becomes superconducting, the low-energy electronic excitations stemming from the band crossings located close to the Fermi level may contribute to highly unusual pairing symmetry and superconducting states. In this work, we study the electronic band structure of the time-reversal symm…
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Topological metals possess various types of symmetry-protected degenerate band crossings. When a topological metal becomes superconducting, the low-energy electronic excitations stemming from the band crossings located close to the Fermi level may contribute to highly unusual pairing symmetry and superconducting states. In this work, we study the electronic band structure of the time-reversal symmetry breaking superconductor LaNiGa$_2$ by means of quantum oscillation measurements. A comprehensive investigation combining angle-resolved high-field de Haas-van Alphen (dHvA) spectroscopy and first-principles calculations reveals the fermiology of LaNiGa$_2$ and verifies its nonsymmorphic $Cmcm$ lattice symmetry, which promises nodal band crossings pinned at the Fermi level with fourfold degeneracies. Moreover, such nodal structures, proposed to play a crucial role giving rise to the interorbital triplet pairing, are indeed captured by our dHvA analysis. Our results identify LaNiGa$_2$ as a prototypical topological crystalline superconductor and highlight the putative contribution of low-energy nodal quasiparticles to unconventional superconducting pairing.
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Submitted 12 December, 2024;
originally announced December 2024.
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Two-dimensional superconductivity and anomalous vortex dissipation in newly-discovered transition metal dichalcogenide-based superlattices
Authors:
Mengzhu Shi,
Kaibao Fan,
Houpu Li,
Senyang Pan,
Jiaqiang Cai,
Nan Zhang,
Hongyu Li,
Tao Wu,
Jinglei Zhang,
Chuanying Xi,
Ziji Xiang,
Xianhui Chen
Abstract:
Properties of layered superconductors can vary drastically when thinned down from bulk to monolayer, owing to the reduced dimensionality and weakened interlayer coupling. In transition metal dichalcogenides (TMDs), the inherent symmetry breaking effect in atomically thin crystals prompts novel states of matter, such as Ising superconductivity with an extraordinary in-plane upper critical field. He…
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Properties of layered superconductors can vary drastically when thinned down from bulk to monolayer, owing to the reduced dimensionality and weakened interlayer coupling. In transition metal dichalcogenides (TMDs), the inherent symmetry breaking effect in atomically thin crystals prompts novel states of matter, such as Ising superconductivity with an extraordinary in-plane upper critical field. Here, we demonstrate that two-dimensional (2D) superconductivity resembling those in atomic layers but with more fascinating behaviours can be realized in the bulk crystals of two new TMD-based superconductors Ba0.75ClTaS2 and Ba0.75ClTaSe2. They comprise an alternating stack of H-type TMD layers and Ba-Cl layers. In both materials, intrinsic 2D superconductivity develops below a Berezinskii-Kosterlitz-Thouless transition. The upper critical field along ab plane exceeds the Pauli limit (Hp); in particular, Ba0.75ClTaSe2 exhibits an extremely high in plane Hc2 (14Hp) and a colossal superconducting anisotropy of 150. Moreover, the temperature-field phase diagram of Ba0.75ClTaSe2 under an in-plane magnetic field contains a large phase regime of vortex dissipation, which can be ascribed to the Josephson vortex motion, signifying an unprecedentedly strong fluctuation effect in TMD-based superconductors. Our results provide a new path towards the establishment of 2D superconductivity and novel exotic quantum phases in bulk crystals of TMD-based superconductors.
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Submitted 18 November, 2024;
originally announced November 2024.
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In-situ Self-optimization of Quantum Dot Emission for Lasers by Machine-Learning Assisted Epitaxy
Authors:
Chao Shen,
Wenkang Zhan,
Shujie Pan,
Hongyue Hao,
Ning Zhuo,
Kaiyao Xin,
Hui Cong,
Chi Xu,
Bo Xu,
Tien Khee Ng,
Siming Chen,
Chunlai Xue,
Fengqi Liu,
Zhanguo Wang,
Chao Zhao
Abstract:
Traditional methods for optimizing light source emissions rely on a time-consuming trial-and-error approach. While in-situ optimization of light source gain media emission during growth is ideal, it has yet to be realized. In this work, we integrate in-situ reflection high-energy electron diffraction (RHEED) with machine learning (ML) to correlate the surface reconstruction with the photoluminesce…
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Traditional methods for optimizing light source emissions rely on a time-consuming trial-and-error approach. While in-situ optimization of light source gain media emission during growth is ideal, it has yet to be realized. In this work, we integrate in-situ reflection high-energy electron diffraction (RHEED) with machine learning (ML) to correlate the surface reconstruction with the photoluminescence (PL) of InAs/GaAs quantum dots (QDs), which serve as the active region of lasers. A lightweight ResNet-GLAM model is employed for the real-time processing of RHEED data as input, enabling effective identification of optical performance. This approach guides the dynamic optimization of growth parameters, allowing real-time feedback control to adjust the QDs emission for lasers. We successfully optimized InAs QDs on GaAs substrates, with a 3.2-fold increase in PL intensity and a reduction in full width at half maximum (FWHM) from 36.69 meV to 28.17 meV under initially suboptimal growth conditions. Our automated, in-situ self-optimized lasers with 5-layer InAs QDs achieved electrically pumped continuous-wave operation at 1240 nm with a low threshold current of 150 A/cm2 at room temperature, an excellent performance comparable to samples grown through traditional manual multi-parameter optimization methods. These results mark a significant step toward intelligent, low-cost, and reproductive light emitters production.
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Submitted 31 October, 2024;
originally announced November 2024.
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Large Enhancement of Properties in Strained Lead-free Multiferroic Solid Solutions with Strong Deviation from Vegard's Law
Authors:
Tao Wang,
Mingjie Zou,
Dehe Zhang,
Yu-Chieh Ku,
Yawen Zheng,
Shen Pan,
Zhongqi Ren,
Zedong Xu,
Haoliang Huang,
Wei Luo,
Yunlong Tang,
Lang Chen,
Cheng-En Liu,
Chun-Fu Chang,
Sujit Das,
Laurent Bellaiche,
Yurong Yang,
Xiuliang Ma,
Chang-Yang Kuo,
Xingjun Liu,
Zuhuang Chen
Abstract:
Efforts to combine the advantages of multiple systems to enhance functionlities through solid solution design present a great challenge due to the constraint imposed by the classical Vegard law. Here, we successfully navigate this trade off by leveraging the synergistic effect of chemical doping and strain engineering in solid solution system of BiFeO3 BaTiO3. Unlike bulks, a significant deviation…
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Efforts to combine the advantages of multiple systems to enhance functionlities through solid solution design present a great challenge due to the constraint imposed by the classical Vegard law. Here, we successfully navigate this trade off by leveraging the synergistic effect of chemical doping and strain engineering in solid solution system of BiFeO3 BaTiO3. Unlike bulks, a significant deviation from the Vegard law accompanying with enhanced multiferroism is observed in the strained solid solution epitaxial films, where we achieve a pronounced tetragonality, enhanced saturated magnetization, substantial polarization, high ferroelectric Curie temperature, all while maintaining impressively low leakage current. These characteristics surpass the properties of their parent BiFeO3 and BaTiO3 films. Moreover, the superior ferroelectricity has never been reported in corresponding bulks. These findings underscore the potential of strained BiFeO3 BaTiO3 films as lead-free, room-temperature multiferroics.
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Submitted 16 October, 2024;
originally announced October 2024.
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Nonlinear field dependence of Hall effect and high-mobility multi-carrier transport in an altermagnet CrSb
Authors:
Yuqing Bai,
Xinji Xiang,
Shuang Pan,
Shichao Zhang,
Haifeng Chen Xi Chen,
Zhida Han,
Guizhou Xu,
Feng Xu
Abstract:
As a promising candidate for altermagnet, CrSb possesses a distinctive compensated spin split band structure that could bring groundbreaking concepts to the field of spintronics. In this work, we have grown high-quality CrSb single crystals and comprehensively investigated their electronic and magneto-transport properties. We have observed large, positive, and non-saturated magnetoresistance (MR)…
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As a promising candidate for altermagnet, CrSb possesses a distinctive compensated spin split band structure that could bring groundbreaking concepts to the field of spintronics. In this work, we have grown high-quality CrSb single crystals and comprehensively investigated their electronic and magneto-transport properties. We have observed large, positive, and non-saturated magnetoresistance (MR) in CrSb, which well obeys Kohler's rule, indicating its classic Lorentz scattering origins. Remarkably, a nonlinear magnetic field dependence of Hall effect resembling the spontaneous anomalous Hall is identified over a wide temperature range. After careful analysis of the transport data, we conclude the non-linearity mainly stems from the incorporation of different carriers in the magnetoconductivity. According to the Fermi surface analyses of CrSb, we applied the three-carrier model to fit the conductivity data, yielding good agreement. The extracted carrier concentration and mobility indicates that CrSb behaves more like a semimetal, with the highest mobility reaching 3*103 cm2V-1s-1. Furthermore, calculations using the semiclassical Boltzmann transport theory have successfully reproduced the main features of the experimental MR and Hall effect in CrSb. These exceptional transport properties make CrSb unique for applications in spintronics as an altermagnet.
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Submitted 9 February, 2025; v1 submitted 23 September, 2024;
originally announced September 2024.
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Electric-field-tunable topological phases in valley-polarized quantum anomalous Hall systems with inequivalent exchange fields
Authors:
Shiyao Pan,
Zeyu Li,
Yulei Han
Abstract:
Incorporating valley as a degree of freedom into quantum anomalous Hall systems offers a novel approach to manipulating valleytronics in electronic transport. Using the Kane-Mele monolayer as a concrete model, we comprehensively explore the various topological phases in the presence of inequivalent exchange fields and reveal the roles of the interfacial Rashba effect and external electric field in…
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Incorporating valley as a degree of freedom into quantum anomalous Hall systems offers a novel approach to manipulating valleytronics in electronic transport. Using the Kane-Mele monolayer as a concrete model, we comprehensively explore the various topological phases in the presence of inequivalent exchange fields and reveal the roles of the interfacial Rashba effect and external electric field in tuning topological valley-polarized states. We find that valley-polarized states can be realized by introducing Kane-Mele spin-orbit coupling and inequivalent exchange fields. Further introducing Rashba spin-orbit coupling and an electric field into the system can lead to diverse topological states, such as the valley-polarized quantum anomalous Hall effect with $\mathcal{C}=~\pm 1,\pm 2$ and valley-contrasting states with $\mathcal{C}=0$. Remarkably, different valley-polarized topological states can be continuously tuned by varying the strength and direction of the external electric field in a fixed system. Our work demonstrates the tunability of topological states in valley-polarized quantum anomalous Hall systems and provides an ideal platform for applications in electronic transport devices in topological valleytronics.
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Submitted 21 August, 2024;
originally announced August 2024.
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On-Demand Growth of Semiconductor Heterostructures Guided by Physics-Informed Machine Learning
Authors:
Chao Shen,
Yuan Li,
Wenkang Zhan,
Shujie Pan,
Fuxin Lin,
Kaiyao Xin,
Hui Cong,
Chi Xu,
Xiaotian Cheng,
Ruixiang Liu,
Zhibo Ni,
Chaoyuan Jin,
Bo Xu,
Siming Chen,
Zhongming Wei,
Chunlai Xue,
Zhanguo Wang,
Chao Zhao
Abstract:
Developing tailored semiconductor heterostructures on demand represents a critical capability for addressing the escalating performance demands in electronic and optoelectronic devices. However, traditional fabrication methods remain constrained by simulation-based design and iterative trial-and-error optimization. Here, we introduce SemiEpi, a self-driving platform designed for molecular beam epi…
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Developing tailored semiconductor heterostructures on demand represents a critical capability for addressing the escalating performance demands in electronic and optoelectronic devices. However, traditional fabrication methods remain constrained by simulation-based design and iterative trial-and-error optimization. Here, we introduce SemiEpi, a self-driving platform designed for molecular beam epitaxy (MBE) to perform multi-step semiconductor heterostructure growth through in-situ monitoring and on-the-fly feedback control. By integrating standard MBE reactors, physics-informed machine learning (ML) models, and parameter initialization, SemiEpi identifies optimal initial conditions and proposes experiments for heterostructure growth, eliminating the need for extensive expertise in MBE processes. As a proof of concept, we demonstrate the optimization of high-density InAs quantum dot (QD) growth with a target emission wavelength of 1240 nm, showcasing the power of SemiEpi. We achieve a QD density of 5 x 10^10 cm^-2, a 1.6-fold increase in photoluminescence (PL) intensity, and a reduced full width at half maximum (FWHM) of 29.13 meV, leveraging in-situ reflective high-energy electron diffraction monitoring with feedback control for adjusting growth temperatures. Taken together, our results highlight the potential of ML-guided systems to address challenges in multi-step heterostructure growth, facilitate the development of a hardware-independent framework, and enhance process repeatability and stability, even without exhaustive knowledge of growth parameters.
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Submitted 5 October, 2025; v1 submitted 6 August, 2024;
originally announced August 2024.
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Enhanced Radiation Hardness of InAs/GaAs Quantum Dot Lasers for Space Communication
Authors:
Manyang Li,
Jianan Duan,
Zhiyong Jin,
Shujie Pan,
Wenkang Zhan,
Jinpeng Chen,
Jinling Yu,
Xiaotian Cheng,
Zhibo Ni,
Chaoyuan Jin,
Tien Khee Ng,
Jinxia Kong,
Xiaochuan Xu,
Yong Yao,
Bo Xu,
Siming Chen,
Zhanguo Wang,
Chao Zhao
Abstract:
Semiconductor lasers have great potential for space laser communication. However, excessive radiation in space can cause laser failure. In principle, quantum dot (QD) lasers are more radiation-resistant than traditional semiconductor lasers because of their superior carrier confinement and smaller active regions. However, the multifaceted nature of radiation effects on QDs resulted in ongoing cont…
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Semiconductor lasers have great potential for space laser communication. However, excessive radiation in space can cause laser failure. In principle, quantum dot (QD) lasers are more radiation-resistant than traditional semiconductor lasers because of their superior carrier confinement and smaller active regions. However, the multifaceted nature of radiation effects on QDs resulted in ongoing controversies. Comprehensive testing under simulated space conditions is also necessary to validate their performance. In this work, we conducted radiation tests on various In(Ga)As/GaAs QD and quantum well (QW) materials and devices. Our results revealed that InAs/GaAs QDs with filling factors greater than 50% exhibit greater radiation hardness than those below 50%. Furthermore, most InAs/GaAs QDs showed superior radiation resistance compared to InGaAs/GaAs QW when exposed to low proton fluences of 1E11 and 1E12 cm-2, resulting from radiation-induced defects. The linewidth enhancement factor (LEF) of well-designed QD lasers remains remarkably stable and close to zero, even under proton irradiation at a maximum fluence of 7E13 cm-2, owing to their inherent insensitivity to irradiation-induced defects. These QD lasers demonstrate an exceptional average relative intensity noise (RIN) level of -162 dB/Hz, with only a 1 dB/Hz increase in RIN observed at the highest fluence, indicating outstanding stability. Furthermore, the lasers exhibit remarkable robustness against optical feedback, sustaining stable performance even under a feedback strength as high as -3.1 dB. These results highlight the significant potential of QD lasers for space laser communication applications, where high reliability and resilience to radiation and environmental perturbations are critical.
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Submitted 26 December, 2024; v1 submitted 30 July, 2024;
originally announced July 2024.
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Inoculating solid-state homogeneous precipitation by impurity atoms through a spinodal decomposition like pathway
Authors:
Shiwei Pan,
Chunan Li,
Hanne-Sofie Søreide,
Dongdong Zhao,
Constantinos Hatzoglou,
Feng Qian,
Long-Qing Chen,
Yanjun Li
Abstract:
Solid-state homogeneous precipitation of nano-sized precipitates is one of the most effective processes to strengthen metal alloys, where the final density and size distribution of precipitates are largely controlled by the precipitation kinetics. Here, we report a strategy to inoculate the homogeneous precipitation of coherent precipitates to enhance the precipitation strengthening. Using the tec…
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Solid-state homogeneous precipitation of nano-sized precipitates is one of the most effective processes to strengthen metal alloys, where the final density and size distribution of precipitates are largely controlled by the precipitation kinetics. Here, we report a strategy to inoculate the homogeneous precipitation of coherent precipitates to enhance the precipitation strengthening. Using the technologically important dilute Al-Zr alloys as an example, we demonstrate that an addition of a trace level of economical and readily available, non-L1$_{2}$ phase forming impurity atoms, X (X= Sn, Sb, Bi or Cd) and Si, can significantly enhance the diffusivity of Zr atoms and overturn the precipitation of L1$_{2}$-structured Al$_{3}$Zr nanoparticles from the classical homogeneous nucleation and growth pathway into a nonclassical nucleation pathway: Al$_{3}$Zr forms through the spontaneous formation of nano-scale local concentration fluctuations of Zr atoms on Zr-X(-Si)-vacancy clusters followed by a continuous increase of the concentration and chemical short-range ordering (CSRO). Such an impurity atoms induced heterogeneous nucleation based on a "spinodal decomposition like" mechanism dramatically accelerates the precipitation kinetics, leading to an order of magnitude higher number density of precipitates and a record high hardening efficiency of solute Zr atoms. By formulating the generalized selection principles for inoculating impurity elements, this inoculation strategy should be extendable to a broader range of materials to further explore the precipitation strengthening potentials.
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Submitted 10 July, 2024;
originally announced July 2024.
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Coherent control of a triangular exchange-only spin qubit
Authors:
Edwin Acuna,
Joseph D. Broz,
Kaushal Shyamsundar,
Antonio B. Mei,
Colin P. Feeney,
Valerie Smetanka,
Tiffany Davis,
Kangmu Lee,
Maxwell D. Choi,
Brydon Boyd,
June Suh,
Wonill D. Ha,
Cameron Jennings,
Andrew S. Pan,
Daniel S. Sanchez,
Matthew D. Reed,
Jason R. Petta
Abstract:
We demonstrate coherent control of a three-electron exchange-only spin qubit with the quantum dots arranged in a close-packed triangular geometry. The device is tuned to confine one electron in each quantum dot, as evidenced by pairwise charge stability diagrams. Time-domain control of the exchange coupling is demonstrated and qubit performance is characterized using blind randomized benchmarking,…
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We demonstrate coherent control of a three-electron exchange-only spin qubit with the quantum dots arranged in a close-packed triangular geometry. The device is tuned to confine one electron in each quantum dot, as evidenced by pairwise charge stability diagrams. Time-domain control of the exchange coupling is demonstrated and qubit performance is characterized using blind randomized benchmarking, with an average single-qubit gate fidelity F = 99.84%. The compact triangular device geometry can be readily scaled to larger two-dimensional quantum dot arrays with high connectivity.
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Submitted 5 June, 2024;
originally announced June 2024.
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Ta2Pd3Te5 topological thermometer
Authors:
Yupeng Li,
Anqi Wang,
Senyang Pan,
Dayu Yan,
Guang Yang,
Xingchen Guo,
Yu Hong,
Guangtong Liu,
Fanming Qu,
Zhijun Wang,
Tian Qian,
Jinglei Zhang,
Youguo Shi,
Li Lu,
Jie Shen
Abstract:
In recent decades, there has been a persistent pursuit of applications for surface/edge states in topological systems, driven by their dissipationless transport effects. However, there have been limited tangible breakthroughs in this field. This work demonstrates the remarkable properties of the topological insulator Ta2Pd3Te5, as a thermometer. This material exhibits a power-law correlation in te…
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In recent decades, there has been a persistent pursuit of applications for surface/edge states in topological systems, driven by their dissipationless transport effects. However, there have been limited tangible breakthroughs in this field. This work demonstrates the remarkable properties of the topological insulator Ta2Pd3Te5, as a thermometer. This material exhibits a power-law correlation in temperature-dependent resistance at low temperatures, stemming from its Luttinger liquid behavior of edge states, while exhibiting semiconductor behavior at high temperatures. The power-law behavior effectively addresses the issue of infinite resistance in semiconductor thermometers at ultra-low temperatures, thereby playing a crucial role in enabling efficient thermometry in refrigerators supporting millikelvin temperatures or below. By employing chemical doping, adjusting thickness, and controlling gate voltage, its power-law behavior and semiconductor behavior can be effectively modulated. This enables efficient thermometry spanning from millikelvin temperatures to room temperature, and allows for precise local temperature measurement. Furthermore, this thermometer exhibits excellent temperature sensitivity and resolution, and can be fine-tuned to show small magnetoresistance. In summary, the Ta2Pd3Te5 thermometer, also referred to as a topological thermometer, exhibits outstanding performance and significant potential for measuring a wider range of temperatures compared to conventional low-temperature thermometers.
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Submitted 2 June, 2024;
originally announced June 2024.
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A family of air-stable chalcogenide solid electrolytes in Li$_2$BMQ$_4$ (B = Ca, Sr and Ba; M = Si, Ge and Sn; Q = O, S and Se) systems
Authors:
Huican Mao,
Xiang Zhu,
Guangmao Li,
Jie Pang,
Junfeng Hao,
Liqi Wang,
Hailong Yu,
Youguo Shi,
Fan Wu,
Shilie Pan,
Ruijuan Xiao,
Hong Li,
Liquan Chen
Abstract:
Combining high-throughput first-principles calculations and experimental measurements, we have identified a novel family of fast lithium-ion chalcogenide conductors in Li$_2$BMQ$_4$ (2114, B = Ca, Sr and Ba; M = Si, Ge and Sn; Q = O, S and Se) systems. Our calculations demonstrate that most of the thermodynamically and kinetically stable sulfides and selenides in this new system exhibit ultralow L…
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Combining high-throughput first-principles calculations and experimental measurements, we have identified a novel family of fast lithium-ion chalcogenide conductors in Li$_2$BMQ$_4$ (2114, B = Ca, Sr and Ba; M = Si, Ge and Sn; Q = O, S and Se) systems. Our calculations demonstrate that most of the thermodynamically and kinetically stable sulfides and selenides in this new system exhibit ultralow Li$^+$ ion migration activation energy (0.16 eV ~ 0.56 eV) and considerable bandgaps varying between ~ 2 eV and 3.5 eV. We have successfully synthesized Li$_2$BaSnS$_4$ and Li$_2$SrSiS$_4$, and they exhibit excellent moisture stability through H$_2$S gas measurements. Electrochemical impedance measurements indicate 2114 systems show the typical features of solid ionic conductors, with a room-temperature Li$^+$ conductivity close to 5$\times$10$^{-4}$ mS/cm aligning with our molecular dynamics simulations. Furthermore, we have theoretically investigated the substitution of Cl$^-$ at S$^{2-}$ site. The doped compounds display significantly higher conductivity, with an increase of about three orders of magnitude (up to a maximum of 0.72 mS/cm) compared to the undoped compounds. These findings offer valuable insights for the further exploration of potential chalcogenide solid electrolyte materials with robust air stability and enhanced ionic conductivity for practical applications in lithium-ion batteries.
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Submitted 6 May, 2024;
originally announced May 2024.
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Magnetism measurements of two-dimensional van der Waals antiferromagnet CrPS4 using dynamic cantilever magnetometry
Authors:
Qi Li,
Weili Zhen,
Ning Wang,
Meng Shi,
Yang Yu,
Senyang Pan,
Lin Deng,
Jiaqiang Cai,
Kang Wang,
Lvkuan Zou,
Zhongming Zeng,
Jinglei Zhang
Abstract:
Recent experimental and theoretical work has focused on two-dimensional van der Waals (2D vdW) magnets due to their potential applications in sensing and spintronics devises. In measurements of these emerging materials, conventional magnetometry often encounters challenges in characterizing the magnetic properties of small-sized vdW materials, especially for antiferromagnets with nearly compensate…
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Recent experimental and theoretical work has focused on two-dimensional van der Waals (2D vdW) magnets due to their potential applications in sensing and spintronics devises. In measurements of these emerging materials, conventional magnetometry often encounters challenges in characterizing the magnetic properties of small-sized vdW materials, especially for antiferromagnets with nearly compensated magnetic moments. Here, we investigate the magnetism of 2D antiferromagnet CrPS4 with a thickness of 8nm by using dynamic cantilever magnetometry (DCM). Through a combination of DCM experiment and the calculation based on a Stoner--Wohlfarth-type model, we unravel the magnetization states in 2D CrPS4 antiferromagnet. In the case of H parallel with c, a two-stage phase transition is observed. For H perpendicular to c, a hump in the effective magnetic restoring force is noted, which implies the presence of spin reorientation as temperature increases. These results demonstrate the benefits of DCM for studying magnetism of 2D magnets.
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Submitted 12 October, 2024; v1 submitted 12 April, 2024;
originally announced April 2024.
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Magnetochiral Tunneling in Paramagnetic Co$_{1/3}$NbS$_2$
Authors:
Seongjoon Lim,
Sobhit Singh,
Fei-Ting Huang,
Shangke Pan,
Kefeng Wang,
Jaewook Kim,
Jinwoong Kim,
David Vanderbilt,
Sang-Wook Cheong
Abstract:
Electric currents have the intriguing ability to induce magnetization in nonmagnetic crystals with sufficiently low crystallographic symmetry. Some associated phenomena include the non-linear anomalous Hall effect in polar crystals and the nonreciprocal directional dichroism in chiral crystals when magnetic fields are applied. In this work, we demonstrate that the same underlying physics is also m…
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Electric currents have the intriguing ability to induce magnetization in nonmagnetic crystals with sufficiently low crystallographic symmetry. Some associated phenomena include the non-linear anomalous Hall effect in polar crystals and the nonreciprocal directional dichroism in chiral crystals when magnetic fields are applied. In this work, we demonstrate that the same underlying physics is also manifested in the electronic tunneling process between the surface of a nonmagnetic chiral material and a magnetized scanning probe. In the paramagnetic but chiral metallic compound Co$_{1/3}$NbS$_2$, the magnetization induced by the tunneling current is shown to become detectable by its coupling to the magnetization of the tip itself. This results in a contrast across different chiral domains, achieving atomic-scale spatial resolution of structural chirality. To support the proposed mechanism, we used first-principles theory to compute the chirality-dependent current-induced magnetization and Berry curvature in the bulk of the material. Our demonstration of this magnetochiral tunneling effect opens up a new avenue for investigating atomic-scale variations in the local crystallographic symmetry and electronic structure across the structural domain boundaries of low-symmetry nonmagnetic crystals.
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Submitted 3 February, 2024;
originally announced February 2024.
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Evidence for Unfolded Fermi Surfaces in the Charge-Density-Wave State of Kagome Metal FeGe Revealed by de Haas-van Alphen Effect
Authors:
Kaixin Tang,
Hanjing Zhou,
Houpu Li,
Senyang Pan,
Xueliang Wu,
Hongyu Li,
Nan Zhang,
Chuanying Xi,
Jinglei Zhang,
Aifeng Wang,
Xiangang Wan,
Ziji Xiang,
Xianhui Chen
Abstract:
The antiferromagnetic kagome lattice compound FeGe has been revealed to host an emergent charge-density-wave (CDW) state which manifests complex interplay between the spin, charge and lattice degrees of freedom. Here, we present a comprehensive study of the de Haas-van Alphen effect by measuring torque magnetometry under magnetic fields up to 45.2 T to map Fermi surfaces in this unusual CDW state.…
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The antiferromagnetic kagome lattice compound FeGe has been revealed to host an emergent charge-density-wave (CDW) state which manifests complex interplay between the spin, charge and lattice degrees of freedom. Here, we present a comprehensive study of the de Haas-van Alphen effect by measuring torque magnetometry under magnetic fields up to 45.2 T to map Fermi surfaces in this unusual CDW state. For field along the $c$ direction, we resolve four cyclotron orbits; the largest one roughly corresponding to the area of the 2$\times$2 folded Brillouin zone. Three smaller orbits are characterized by light effective cyclotron masses range from (0.18-0.30) $m_e$. Angle-resolved measurements identify one Fermi surface segment with weak anisotropy. Combined with band structure calculations, our results suggest that features of unfolded Fermi surfaces are robust against CDW reconstruction, corroborating the novel effect of a short-ranged CDW on the electronic structure.
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Submitted 22 January, 2024;
originally announced January 2024.
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Extreme orbital ab-plane upper critical fields far beyond Pauli limit in 4Hb-Ta(S, Se)2 bulk crystals
Authors:
Fanyu Meng,
Yang Fu,
Senyang Pan,
Shangjie Tian,
Shaohua Yan,
Zhengyu Li,
Shouguo Wang,
Jinglei Zhang,
Hechang Lei
Abstract:
Transition metal disulfides 4Hb-Ta(S, Se)2 with natural heterostructure of 1T- and 1H-Ta(S, Se)2 layers have became the focus of correlated materials their unique combinations of Mott physics and possible topological superconductivity. In this work, we study the upper critical fields mu0Hc2 of 4Hb-TaS2 and 4Hb-TaS1.99Se0.01 single crystals systematically. Transport measurements up to 35 T show tha…
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Transition metal disulfides 4Hb-Ta(S, Se)2 with natural heterostructure of 1T- and 1H-Ta(S, Se)2 layers have became the focus of correlated materials their unique combinations of Mott physics and possible topological superconductivity. In this work, we study the upper critical fields mu0Hc2 of 4Hb-TaS2 and 4Hb-TaS1.99Se0.01 single crystals systematically. Transport measurements up to 35 T show that both of ab-plane and c-axis upper critical fields (mu0Hc2,ab and mu0Hc2,c) for 4Hb-TaS2 and 4Hb-TaS1.99Se0.01 exhibit a linear temperature dependent behavior down to 0.3 K, suggesting the three-dimensional superconductivity with dominant orbital depairing mechanism in bulk 4Hb-Ta(S, Se)2. However, the zero-temperature mu0Hc2,ab(0) for both crystals are far beyond the Pauli paramagnetic limit mu0HP. It could be explained by the effects of spin-momentum locking in 1H-Ta(S, Se)2 layers with local inversion symmetry broken and the relatively weak intersublattice interaction between 1H layers due to the existence of 1T layers.
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Submitted 25 December, 2025; v1 submitted 6 December, 2023;
originally announced December 2023.
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Growth of high-quality CrI3 single crystals and engineering of its magnetic properties via V and Mn doping
Authors:
Shuang Pan,
Yuqing Bai,
Jiaxuan Tang,
Peihao Wang,
Yurong You,
Guizhou Xu,
Feng Xu
Abstract:
CrI3, as a soft van der Waals layered magnetic material, has been widely concerned and explored for its magnetic complexity and tunability. In this work, high quality and large size thin CrI3, V and Mn doped single crystals were prepared by chemical vapor transfer method. A remarkable irreversible Barkhausen effect was observed in CrI3 and CrMn0.06I3, which can be attributed to the low dislocation…
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CrI3, as a soft van der Waals layered magnetic material, has been widely concerned and explored for its magnetic complexity and tunability. In this work, high quality and large size thin CrI3, V and Mn doped single crystals were prepared by chemical vapor transfer method. A remarkable irreversible Barkhausen effect was observed in CrI3 and CrMn0.06I3, which can be attributed to the low dislocation density that facilitates movement of the domain walls. In addition, the introduction of the doping element Mn allows higher saturation magnetization intensity. Cr0.5V0.5I3 exhibits substantially increased coercivity force and larger magnetocrystalline anisotropy compared to CrI3, while kept similar Curie temperature and good environmental stability. The first principles calculations suggest direct and narrowed band gaps in Cr0.5V0.5I3 and VI3 comparing to CrI3. The smaller band gaps and good hard magnetic property make Cr0.5V0.5I3 an alternative choice to future research of spintronic devices.
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Submitted 30 November, 2023;
originally announced November 2023.
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Highly sensitive magnetic properties and large linear magnetoresistance in antiferromagnetic CrxSe(0.875\lex\le1)single crystals
Authors:
Yuqing Bai,
Shuang Pan,
Ziqian Lu,
Yuanyuan Gong,
Guizhou Xu,
Feng Xu
Abstract:
CrxSe (x\le1) is a class of quasi-layered binary compounds with potential applications in spintronics due to its intriguing antiferromagnetic properties. In this work, CrxSe single crystals with high Cr content (x=0.87, 0.91 and 0.95) were grown, and their magnetic and transport properties were investigated in detail. It is found that with small increase of Cr content, the Néel temperature (TN) of…
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CrxSe (x\le1) is a class of quasi-layered binary compounds with potential applications in spintronics due to its intriguing antiferromagnetic properties. In this work, CrxSe single crystals with high Cr content (x=0.87, 0.91 and 0.95) were grown, and their magnetic and transport properties were investigated in detail. It is found that with small increase of Cr content, the Néel temperature (TN) of the samples can dramatically increase from 147 K to 257 K, accompanied with obvious changes in the magnetic anisotropy and hysteresis. The phenomena of field-induced spin-flop transitions were unveiled in these alloys, indicating their comparatively low anisotropy. The magnetoresistance (MR) of the three compounds showed positive dependence at low temperatures and particularly, non-saturated linear positive MR was observed in Cr0.91Se and Cr0.95Se, with a large value of 16.2% achieved in Cr0.91Se (10K, 9T). The calculated Fermi surface and MR showed that the quasi-linear MR is a product of carrier compensation. Our work revealed highly sensitive magnetic and transport properties in the Cr-Se compounds, which can lay foundation when constructing further antiferromagnetic spintronic devices based on them.
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Submitted 30 November, 2023;
originally announced November 2023.
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Vanishing of the anomalous Hall effect and enhanced carrier mobility in the spin-gapless ferromagnetic Mn2CoGa1-xAlx alloys
Authors:
Cheng Zhang,
Shuang Pan,
Peihao Wang,
Yuchen Men,
Xiang Li,
Yuqing Bai,
Li Tang,
Feng Xu,
Guizhou Xu
Abstract:
Spin gapless semiconductor (SGS) has attracted long attention since its theoretical prediction, while concrete experimental hints are still lack in the relevant Heusler alloys. Here in this work, by preparing the series alloys of Mn2CoGa1-xAlx (x=0, 0.25, 0.5, 0.75 and 1), we identified the vanishing of anomalous Hall effect in the ferromagnetic Mn2CoGa (or x=0.25) alloy in a wide temperature inte…
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Spin gapless semiconductor (SGS) has attracted long attention since its theoretical prediction, while concrete experimental hints are still lack in the relevant Heusler alloys. Here in this work, by preparing the series alloys of Mn2CoGa1-xAlx (x=0, 0.25, 0.5, 0.75 and 1), we identified the vanishing of anomalous Hall effect in the ferromagnetic Mn2CoGa (or x=0.25) alloy in a wide temperature interval, accompanying with growing contribution from the ordinary Hall effect. As a result, comparatively low carrier density (1020 cm-3) and high carrier mobility (150 cm2/Vs) are obtained in Mn2CoGa (or x=0.25) alloy in the temperature range of 10-200K. These also lead to a large dip in the related magnetoresistance at low fields. While in high Al content, despite the magnetization behavior is not altered significantly, the Hall resistivity is instead dominated by the anomalous one, just analogous to that widely reported in Mn2CoAl. The distinct electrical transport behavior of x=0 and x=0.75 (or 1) is presently understood by their possible different scattering mechanism of the anomalous Hall effect due to the differences in atomic order and conductivity. Our work can expand the existing understanding of the SGS properties and offer a better SGS candidate with higher carrier mobility that can facilitate the application in the spin-injected related devices.
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Submitted 30 November, 2023;
originally announced November 2023.
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Fermionized dual vortex theory for magnetized kagomé spin liquid
Authors:
Si-Yu Pan,
Gang V. Chen
Abstract:
Inspired by the recent quantum oscillation measurement on the kagomé lattice antiferromagnet in finite magnetic fields, we raise the question about the physical contents of the emergent fermions and the gauge fields if the U(1) spin liquid is relevant for the finite-field kagomé lattice antiferromagnet. Clearly, the magnetic field is non-perturbative in this regime, and the finite-field state has…
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Inspired by the recent quantum oscillation measurement on the kagomé lattice antiferromagnet in finite magnetic fields, we raise the question about the physical contents of the emergent fermions and the gauge fields if the U(1) spin liquid is relevant for the finite-field kagomé lattice antiferromagnet. Clearly, the magnetic field is non-perturbative in this regime, and the finite-field state has no direct relation with the U(1) Dirac spin liquid proposal at zero field. We here consider the fermionized dual vortex liquid state as one possible candidate theory to understand the magnetized kagomé spin liquid. Within the dual vortex theory, the $S^z$ magnetization is the emergent U(1) gauge flux, and the fermionized dual vortex is the emergent fermion. The magnetic field polarizes the spin component that modulates the U(1) gauge flux for the fermionized vortices and generates the quantum oscillation. Within the mean-field theory, we discuss the gauge field correlation, the vortex-antivortex continuum and the vortex thermal Hall effect.
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Submitted 16 May, 2025; v1 submitted 27 November, 2023;
originally announced November 2023.
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Rashba-splitting-induced topological flat band detected by anomalous resistance oscillations beyond the quantum limit in ZrTe$_5$
Authors:
Dong Xing,
Bingbing Tong,
Senyang Pan,
Zezhi Wang,
Jianlin Luo,
Jinglei Zhang,
Cheng-Long Zhang
Abstract:
Topological flat band, on which the kinetic energy of topological electrons is quenched, represents a platform for investigating the topological properties of correlated systems. Recent experimental studies on flattened electronic bands have mainly concentrated on 2-dimensional materials created by van der Waals heterostructure-based engineering. Here, we report the observation of a topological fl…
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Topological flat band, on which the kinetic energy of topological electrons is quenched, represents a platform for investigating the topological properties of correlated systems. Recent experimental studies on flattened electronic bands have mainly concentrated on 2-dimensional materials created by van der Waals heterostructure-based engineering. Here, we report the observation of a topological flat band formed by polar-distortion-assisted Rashba splitting in a 3-dimensional Dirac material ZrTe$_5$. The polar distortion and resulting Rashba splitting on the band are directly detected by torque magnetometry and the anomalous Hall effect, respectively. The local symmetry breaking further flattens the band, on which we observe resistance oscillations beyond the quantum limit. These oscillations follow the temperature dependence of the Lifshitz-Kosevich formula but are evenly distributed in B instead of 1/B in high magnetic fields. Furthermore, the cyclotron mass anomalously gets enhanced about 10$^2$ times at field ~20 T. These anomalous properties of oscillations originate from a topological flat band with quenched kinetic energy. The topological flat band, realized by polar-distortion-assisted Rashba splitting in the 3-dimensional Dirac system ZrTe$_5$, signifies an intrinsic platform without invoking moiré or order-stacking engineering, and also opens the door for studying topologically correlated phenomena beyond the dimensionality of two.
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Submitted 25 May, 2024; v1 submitted 22 November, 2023;
originally announced November 2023.
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The Ground State Lattice Distortion of CsV$_{3}$Sb$_{5}$ Revealed by de Haas-van Alphen Oscillations
Authors:
Senyang Pan,
Feng Du,
Yong Zhang,
Zheng Chen,
Qi Li,
Yingcai Qian,
Xiangde Zhu,
Chuanying Xi,
Li Pi,
Wing Chi Yu,
Qun Niu,
Jinglei Zhang,
Mingliang Tian
Abstract:
The recently discovered AV$_{3}$Sb$_{5}$ (A = K, Rb, Cs) compounds have garnered intense attention in the scientific community due to their unique characteristics as kagome superconductors coexisting with a charge density wave (CDW) order. To comprehend the electronic properties of this system, it is essential to understand the lattice distortions associated with the CDW order and the ground state…
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The recently discovered AV$_{3}$Sb$_{5}$ (A = K, Rb, Cs) compounds have garnered intense attention in the scientific community due to their unique characteristics as kagome superconductors coexisting with a charge density wave (CDW) order. To comprehend the electronic properties of this system, it is essential to understand the lattice distortions associated with the CDW order and the ground state electronic behavior. Here, we comprehensively examine the Fermi surface by a combination of angle-dependent torque magnetometry and density functional theory calculations. We observe magnetic breakdown in the de Haas-van Alphen oscillations under high magnetic fields. Additionally, by examining the angular and temperature variations in quantum oscillation frequencies, we gain insight into the evolution of the three-dimensional like Fermi surfaces and the cyclotron masses of the orbits, which are consistent with weak electron-phonon coupling. Notably, further comparisons indicate that the 2$\times$2$\times$2 Star-of-David (SoD) distortion is more compatible with both high frequency data above 1000\,T and low frequency data below 500\,T, while the 2$\times$2$\times$2 Tri-Hexagonal (TrH) distortion aligns well with experimental data at mid frequencies. This finding implies the inherent coexistence of both TrH and SoD 2$\times$2$\times$2 patterns within the CDW order. These observations provide key insights into the interplay among effective electronic dimensionality, CDW state, and superconductivity.
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Submitted 9 November, 2023;
originally announced November 2023.
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Probing the fractional quantum Hall phases in valley-layer locked bilayer MoS$_{2}$
Authors:
Siwen Zhao,
Jinqiang Huang,
Valentin Crépel,
Xingguang Wu,
Tongyao Zhang,
Hanwen Wang,
Xiangyan Han,
Zhengyu Li,
Chuanying Xi,
Senyang Pan,
Zhaosheng Wang,
Kenji Watanabe,
Takashi Taniguchi,
Benjamin Sacépé,
Jing Zhang,
Ning Wang,
Jianming Lu,
Nicolas Regnault,
Zheng Vitto Han
Abstract:
Semiconducting transition-metal dichalcogenides (TMDs) exhibit high mobility, strong spin-orbit coupling, and large effective masses, which simultaneously leads to a rich wealth of Landau quantizations and inherently strong electronic interactions. However, in spite of their extensively explored Landau levels (LL) structure, probing electron correlations in the fractionally filled LL regime has no…
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Semiconducting transition-metal dichalcogenides (TMDs) exhibit high mobility, strong spin-orbit coupling, and large effective masses, which simultaneously leads to a rich wealth of Landau quantizations and inherently strong electronic interactions. However, in spite of their extensively explored Landau levels (LL) structure, probing electron correlations in the fractionally filled LL regime has not been possible due to the difficulty of reaching the quantum limit. Here, we report evidence for fractional quantum Hall (FQH) states at filling fractions 4/5 and 2/5 in the lowest LL of bilayer MoS$_{2}$, manifested in fractionally quantized transverse conductance plateaus accompanied by longitudinal resistance minima. We further show that the observed FQH states sensitively depend on the dielectric and gate screening of the Coulomb interactions. Our findings establish a new FQH experimental platform which are a scarce resource: an intrinsic semiconducting high mobility electron gas, whose electronic interactions in the FQH regime are in principle tunable by Coulomb-screening engineering, and as such, could be the missing link between atomically thin graphene and semiconducting quantum wells.
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Submitted 8 October, 2023; v1 submitted 5 August, 2023;
originally announced August 2023.
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Temperature-Dependent and Magnetism-Controlled Fermi Surface Changes in Magnetic Weyl Semimetals
Authors:
Nan Zhang,
Xianyong Ding,
Fangyang Zhan,
Houpu Li,
Hongyu Li,
Kaixin Tang,
Yingcai Qian,
Senyang Pan,
Xiaoliang Xiao,
Jinglei Zhang,
Rui Wang,
Ziji Xiang,
Xianhui Chen
Abstract:
The coupling between band structure and magnetism can lead to intricate Fermi surface modifications. Here we report on the comprehensive study of the Shubnikov-de Haas (SdH) effect in two rare-earth-based magnetic Weyl semimetals, NdAlSi and CeAlSi$_{0.8}$Ge$_{0.2}$. The results show that the temperature evolution of topologically nontrivial Fermi surfaces strongly depends on magnetic configuratio…
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The coupling between band structure and magnetism can lead to intricate Fermi surface modifications. Here we report on the comprehensive study of the Shubnikov-de Haas (SdH) effect in two rare-earth-based magnetic Weyl semimetals, NdAlSi and CeAlSi$_{0.8}$Ge$_{0.2}$. The results show that the temperature evolution of topologically nontrivial Fermi surfaces strongly depends on magnetic configurations. In NdAlSi, the SdH frequencies vary with temperature in both the paramagnetic state and the magnetically ordered state with a chiral spin texture, but become temperature independent in the high-field fully polarized state. In CeAlSi$_{0.8}$Ge$_{0.2}$, SdH frequencies are temperature-dependent only in the ferromagnetic state with magnetic fields applied along the $c$ axis. First-principles calculations suggest that the notable temperature and magnetic-configuration dependence of Fermi surface morphology can be attributed to strong exchange coupling between the conduction electrons and local magnetic moments.
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Submitted 30 April, 2023;
originally announced May 2023.
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Prediction of surface reconstructions using MAGUS
Authors:
Yu Han,
Junjie Wang,
Chi Ding,
Hao Gao,
Shuning Pan,
Qiuhan Jia,
Jian Sun
Abstract:
In this paper, we present a new module to predict the potential surface reconstruction configurations of given surface structures in the framework of our machine learning and graph theory assisted universal structure searcher (MAGUS). In addition to random structures generated with specific lattice symmetry, we made full use of bulk materials to obtain a better distribution of population energy, n…
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In this paper, we present a new module to predict the potential surface reconstruction configurations of given surface structures in the framework of our machine learning and graph theory assisted universal structure searcher (MAGUS). In addition to random structures generated with specific lattice symmetry, we made full use of bulk materials to obtain a better distribution of population energy, namely, randomly appending atoms to a surface cleaved from bulk structures or moving/removing some of the atoms on the surface, which is inspired by natural surface reconstruction processes. In addition, we borrowed ideas from cluster predictions to spread structures better between different compositions, considering that surface models of different atom numbers usually have some building blocks in common. To validate this newly developed module, we tested it with studies on the surface reconstructions of Si (100), Si (111) and 4H-SiC(1-102)-c(2x2), respectively. We successfully gave the known ground states as well as a new SiC surface model in an extremely Si-rich environment.
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Submitted 22 December, 2022;
originally announced December 2022.
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Giant and Reversible Electronic Structure Evolution in a Magnetic Topological Material EuCd2As2
Authors:
Yang Wang,
Cong Li,
Taimin Miao,
Shuai Zhang,
Yong Li,
Liqin Zhou,
Meng Yang,
Chaohui Yin,
Yongqing Cai,
Chunyao Song,
Hailan Luo,
Hao Chen,
Hanqing Mao,
Lin Zhao,
Hanbin Deng,
Yingkai Sun,
Changjiang Zhu,
Fengfeng Zhang,
Feng Yang,
Zhimin Wang,
Shenjin Zhang,
Qinjun Peng,
Shuheng Pan,
Youguo Shi,
Hongming Weng
, et al. (3 additional authors not shown)
Abstract:
The electronic structure and the physical properties of quantum materials can be significantly altered by charge carrier doping and magnetic state transition. Here we report a discovery of a giant and reversible electronic structure evolution with doping in a magnetic topological material. By performing high-resolution angle-resolved photoemission measurements on EuCd2As2,we found that a huge amou…
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The electronic structure and the physical properties of quantum materials can be significantly altered by charge carrier doping and magnetic state transition. Here we report a discovery of a giant and reversible electronic structure evolution with doping in a magnetic topological material. By performing high-resolution angle-resolved photoemission measurements on EuCd2As2,we found that a huge amount of hole doping can be introduced into the sample surface due to surface absorption. The electronic structure exhibits a dramatic change with the hole doping which can not be described by a rigid band shift. Prominent band splitting is observed at high doping which corresponds to a doping-induced magnetic transition at low temperature (below -15 K) from an antiferromagnetic state to a ferromagnetic state. These results have established a detailed electronic phase diagram of EuCd2As2 where the electronic structure and the magnetic structure change systematically and dramatically with the doping level. They further suggest that the transport, magnetic and topological properties of EuCd2As2 can be greatly modified by doping. These work will stimulate further investigations to explore for new phenomena and properties in doping this magnetic topological material.
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Submitted 28 August, 2022;
originally announced August 2022.
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Superionic silica-water and silica-hydrogen compounds under high pressure
Authors:
Hao Gao,
Cong Liu,
Jiuyang Shi,
Shuning Pan,
Tianheng Huang,
Xiancai Lu,
Hui-Tian Wang,
Dingyu Xing,
Jian Sun
Abstract:
Silica, water and hydrogen are known to be the major components of celestial bodies, and have significant influence on the formation and evolution of giant planets, such as Uranus and Neptune. Thus, it is of fundamental importance to investigate their states and possible reactions under the planetary conditions. Here, using advanced crystal structure searches and first-principles calculations in t…
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Silica, water and hydrogen are known to be the major components of celestial bodies, and have significant influence on the formation and evolution of giant planets, such as Uranus and Neptune. Thus, it is of fundamental importance to investigate their states and possible reactions under the planetary conditions. Here, using advanced crystal structure searches and first-principles calculations in the Si-O-H system, we find that a silica-water compound (SiO2)2(H2O) and a silica-hydrogen compound SiO2H2 can exist under high pressures above 450 and 650 GPa, respectively. Further simulations reveal that, at high pressure and high temperature conditions corresponding to the interiors of Uranus and Neptune, these compounds exhibit superionic behavior, in which protons diffuse freely like liquid while the silicon and oxygen framework is fixed as solid. Therefore, these superionic silica-water and silica-hydrogen compounds could be regarded as important components of the deep mantle or core of giants, which also provides an alternative origin for their anomalous magnetic fields. These unexpected physical and chemical properties of the most common natural materials at high pressure offer key clues to understand some abstruse issues including demixing and erosion of the core in giant planets, and shed light on building reliable models for solar giants and exoplanets.
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Submitted 28 July, 2021;
originally announced July 2021.
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Direct Observation of the Scale Relation between Density of States and Pairing Gap in a Dirty Superconductor
Authors:
Chang-Jiang Zhu,
Limin Liu,
Peng-Bo Song,
Han-Bin Deng,
Chang-Jiang Yi,
Ying-Kai Sun,
R. Wu,
Jia-Xin Yin,
Youguo Shi,
Ziqiang Wang,
Shuheng H. Pan
Abstract:
Theories and experiments on dirty superconductors are sophisticated but important for both fundamentals and applications. It becomes more challenging when magnetic fields are present, because the field distribution, the electron density of states, and the superconducting pairing potentials are nonuniform. Here we present tunneling microspectroscopic experiments on NbC single crystals and show that…
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Theories and experiments on dirty superconductors are sophisticated but important for both fundamentals and applications. It becomes more challenging when magnetic fields are present, because the field distribution, the electron density of states, and the superconducting pairing potentials are nonuniform. Here we present tunneling microspectroscopic experiments on NbC single crystals and show that NbC is a homogeneous dirty superconductor. When applying magnetic fields to the sample, we observe that the zero-energy local density of states and the pairing energy gap follow an explicit scale relation proposed by de Gennes for homogeneous dirty superconductors in high magnetic fields. Surprisingly, our experimental findings suggest that the validity of the scale relation extends to magnetic field strengths far below the upper critical field and call for new nonperturbative understanding of this fundamental property in dirty superconductors. On the practical side, we use the observed scale relation to drive a simple and straightforward experimental scheme for extracting the superconducting coherence length of a dirty superconductor in magnetic fields.
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Submitted 14 June, 2021;
originally announced June 2021.
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Single-crystal hexagonal boron nitride monolayer epitaxially grown on Cu (111) thin film across a wafer
Authors:
Tse-An Chen,
Chih-Piao Chuu,
Chien-Chih Tseng,
Chao-Kai Wen,
H. -S. Philip Wong,
Shuangyuan Pan,
Rongtan Li,
Yanfeng Zhang,
Qiang Fu,
Boris I. Yakobson,
Wen-Hao Chang,
Lain-Jong Li
Abstract:
We demonstrate single crystal growth of wafer-scale hexagonal boron nitride (hBN), an insulating atomic thin monolayer, on high-symmetry index surface plane Cu(111). The unidirectional epitaxial growth is guaranteed by large binding energy difference, ~0.23 eV, between A- and B-steps edges on Cu(111) docking with B6N7 clusters, confirmed by density functional theory calculations.
We demonstrate single crystal growth of wafer-scale hexagonal boron nitride (hBN), an insulating atomic thin monolayer, on high-symmetry index surface plane Cu(111). The unidirectional epitaxial growth is guaranteed by large binding energy difference, ~0.23 eV, between A- and B-steps edges on Cu(111) docking with B6N7 clusters, confirmed by density functional theory calculations.
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Submitted 1 June, 2021; v1 submitted 31 May, 2021;
originally announced May 2021.
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Thermal dynamics of charge density wave pinning in ZrTe3
Authors:
Limin Liu,
Changjiang Zhu,
Z. Y. Liu,
Hanbin Deng,
X. B. Zhou,
Yuan Li,
Yingkai Sun,
Xiong Huang,
Shuaishuai Li,
Xin Du,
Zheng Wang,
Tong Guan,
Hanqing Mao,
Y. Sui,
Rui Wu,
Jia-Xin Yin,
J. -G. Cheng,
Shuheng H. Pan
Abstract:
Impurity pinning has long been discussed to have a profound effect on the dynamics of an incommensurate charge density wave (CDW), which would otherwise slide through the lattice without resistance. Here we visualize the impurity pinning evolution of the CDW in ZrTe3 using the variable temperature scanning tunneling microscopy (STM). At low temperatures, we observe a quasi-1D incommensurate CDW mo…
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Impurity pinning has long been discussed to have a profound effect on the dynamics of an incommensurate charge density wave (CDW), which would otherwise slide through the lattice without resistance. Here we visualize the impurity pinning evolution of the CDW in ZrTe3 using the variable temperature scanning tunneling microscopy (STM). At low temperatures, we observe a quasi-1D incommensurate CDW modulation moderately correlated to the impurity positions, indicating a weak impurity pinning. As we raise the sample temperature, the CDW modulation gets progressively weakened and distorted, while the correlation with the impurities becomes stronger. Above the CDW transition temperature, short-range modulations persist with the phase almost all pinned by impurities. The evolution from weak to strong impurity pinning through the CDW transition can be understood as a result of losing phase rigidity.
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Submitted 6 May, 2021;
originally announced May 2021.
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Probing topological quantum matter with scanning tunnelling microscopy
Authors:
Jia-Xin Yin,
Shuheng H. Pan,
M Zahid Hasan
Abstract:
The search for topological phases of matter is evolving towards strongly interacting systems, including magnets and superconductors, where exotic effects emerge from the quantum-level interplay between geometry, correlation and topology. Over the past decade or so, scanning tunnelling microscopy has become a powerful tool to probe and discover emergent topological matter, because of its unpreceden…
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The search for topological phases of matter is evolving towards strongly interacting systems, including magnets and superconductors, where exotic effects emerge from the quantum-level interplay between geometry, correlation and topology. Over the past decade or so, scanning tunnelling microscopy has become a powerful tool to probe and discover emergent topological matter, because of its unprecedented spatial resolution, high-precision electronic detection and magnetic tunability. Scanning tunnelling microscopy can be used to probe various topological phenomena, as well as complement results from other techniques. We discuss some of these proof-of-principle methodologies applied to probe topology, with particular attention to studies performed under a tunable vector magnetic field, which is a relatively new direction of recent focus. We then project the future possibilities for atomic-resolution tunnelling methods in providing new insights into topological matter.
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Submitted 15 March, 2021;
originally announced March 2021.
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Negative linear compressibility and unusual dynamic behaviors of NaB3
Authors:
Xin-Ling He,
Shu-Ning Pan,
Yue Chen,
Xiao-Ji Weng,
Zifan Wang,
Dongli Yu,
Xiao Dong,
Jian Sun,
Yongjun Tian,
Xiang-Feng Zhou
Abstract:
First-principles calculations reveal that sodium boride (NaB3) undergoes a phase transition from a tetragonal P4/mbm phase to an orthorhombic Pbam phase at about 16 GPa, accompanied by counterintuitive lattice expansion along the crystallographic a-axis. This unusual compression behavior is identified as negative linear compressibility (NLC), which is dominantly attributed to the symmetry-breaking…
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First-principles calculations reveal that sodium boride (NaB3) undergoes a phase transition from a tetragonal P4/mbm phase to an orthorhombic Pbam phase at about 16 GPa, accompanied by counterintuitive lattice expansion along the crystallographic a-axis. This unusual compression behavior is identified as negative linear compressibility (NLC), which is dominantly attributed to the symmetry-breaking of boron framework. Meanwhile, the P4/mbm and Pbam phases form superionic conductors after undergoing a peculiar swap state at high temperature. Specifically, under warm conditions the Na cation pairs exhibit a rare local exchange (or rotation) behavior, which may be originated from the asymmetric energy barriers of different diffusion paths. The study of NaB3 compound sheds new light on a material with the combination of NLC and ion transportation at extreme conditions.
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Submitted 16 February, 2021;
originally announced February 2021.
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Role of anion in the pairing interaction of iron-based superconductivity
Authors:
J. -X. Yin,
Y. Y. Zhao,
Zheng Wu,
X. X. Wu,
A. Kreisel,
B. M. Andersen,
Gennevieve Macam,
Sen Zhou,
Rui Wu,
Limin Liu,
Hanbin Deng,
Changjiang Zhu,
Yuan Li,
Yingkai Sun,
Zhi-Quan Huang,
Feng-Chuan Chuang,
Hsin Lin,
C. -S. Ting,
J. -P. Hu,
Z. Q. Wang,
P. C. Dai,
H. Ding,
S. H. Pan
Abstract:
High-temperature iron-based superconductivity develops in a structure with unusual lattice-orbital geometry, based on a planar layer of Fe atoms with 3d orbitals and tetrahedrally coordinated by anions. Here we elucidate the electronic role of anions in the iron-based superconductors utilizing state-of-the-art scanning tunneling microscopy. By measuring the local electronic structure, we find that…
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High-temperature iron-based superconductivity develops in a structure with unusual lattice-orbital geometry, based on a planar layer of Fe atoms with 3d orbitals and tetrahedrally coordinated by anions. Here we elucidate the electronic role of anions in the iron-based superconductors utilizing state-of-the-art scanning tunneling microscopy. By measuring the local electronic structure, we find that As anion in Ba0.4K0.6Fe2As2 has a striking impact on the electron pairing. The superconducting electronic feature can be switched off/on by removing/restoring As atoms on Fe layer at the atomic scale. Our analysis shows that this remarkable atomic switch effect is related to the geometrical cooperation between anion mediated hopping and unconventional pairing interaction. Our results uncover that the local Fe-anion coupling is fundamental for the pairing interaction of iron-based superconductivity, and promise the potential of bottom-up engineering of electron pairing.
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Submitted 15 November, 2020;
originally announced November 2020.
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Noncollinear antiferromagnetic order in the buckled honeycomb lattice of magnetoelectric Co4Ta2O9 determined by single-crystal neutron diffraction
Authors:
Sungkyun Choi,
Dong Gun Oh,
Matthias J. Gutmann,
Shangke Pan,
Gideok Kim,
Kwanghyo Son,
Jaewook Kim,
Nara Lee,
Sang-Wook Cheong,
Young Jai Choi,
Valery Kiryukhin
Abstract:
Co4Ta2O9 exhibits a three-dimensional magnetic lattice based on the buckled honeycomb motif. It shows unusual magnetoelectric effects, including the sign change and non-linearity. These effects cannot be understood without the detailed knowledge of the magnetic structure. Herein, we report neutron diffraction and direction-dependent magnetic susceptibility measurements on Co4Ta2O9 single crystals.…
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Co4Ta2O9 exhibits a three-dimensional magnetic lattice based on the buckled honeycomb motif. It shows unusual magnetoelectric effects, including the sign change and non-linearity. These effects cannot be understood without the detailed knowledge of the magnetic structure. Herein, we report neutron diffraction and direction-dependent magnetic susceptibility measurements on Co4Ta2O9 single crystals. Below 20.3 K, we find a long-range antiferromagnetic order in the alternating buckled and flat honeycomb layers of Co2+ ions stacked along the c axis. Within experimental accuracy, the magnetic moments lie in the ab plane. They form a canted antiferromagnetic structure with a tilt angle of ~ 14 degrees at 15 K in the buckled layers, while the magnetic moments in each flat layer are collinear. This is directly evidenced by a finite (0, 0, 3) magnetic Bragg peak intensity, which would be absent in the collinear magnetic order. The magnetic space group is C2'/c. It is different from the previously reported C2/c' group, also found in the isostructural Co4Nb2O9. The revised magnetic structure successfully explains the major features of the magnetoelectric tensor of Co4Ta2O9 within the framework of the spin-flop model.
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Submitted 13 January, 2021; v1 submitted 13 July, 2020;
originally announced July 2020.
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Experimental observations indicating the topological nature of the edge states on HfTe5
Authors:
Rui-Zhe Liu,
Xiong Huang,
Ling-Xiao Zhao,
Li-Min Liu,
Jia-Xin Yin,
Rui Wu,
Gen-Fu Chen,
Zi-Qiang Wang,
Shuheng H. Pan
Abstract:
The topological edge states of two-dimensional topological insulators with large energy gap furnish ideal conduction channels for dissipationless current transport. Transition metal tellurides XTe5 (X=Zr, Hf) are theoretically predicted to be large-gap two-dimensional topological insulators and the experimental observations of their bulk insulating gap and in-gap edge states have been reported, bu…
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The topological edge states of two-dimensional topological insulators with large energy gap furnish ideal conduction channels for dissipationless current transport. Transition metal tellurides XTe5 (X=Zr, Hf) are theoretically predicted to be large-gap two-dimensional topological insulators and the experimental observations of their bulk insulating gap and in-gap edge states have been reported, but the topological nature of these edge states still remains to be further elucidated. Here, we report our low temperature scanning tunneling microscopy/spectroscopy study on single crystals of HfTe5. We demonstrate a full energy gap of ~80 meV near the Fermi level on the surface monolayer of HfTe5 and that such insulating energy gap gets filled with finite energy states when measured at the monolayer step edges. Remarkably, such states are absent at the edges of a narrow monolayer strip of one-unit-cell in width but persist at both step edges of a unit-cell wide monolayer groove. These experimental observations strongly indicate that the edge states of HfTe5 monolayers are not trivially caused by translational symmetry breaking, instead they are topological in nature protected by the 2D nontrivial bulk properties.
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Submitted 9 March, 2020;
originally announced March 2020.
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Fermi Level Controlled Ultrafast Demagnetization Mechanism in Half-Metallic Heusler Alloy
Authors:
Santanu Pan,
Takeshi Seki,
Koki Takanashi,
Anjan Barman
Abstract:
The electronic band structure-controlled ultrafast demagnetization mechanism in Co2FexMn1-xSi Heusler alloy is underpinned by systematic variation of composition. We find the spin-flip scattering rate controlled by spin density of states at Fermi level is responsible for non-monotonic variation of ultrafast demagnetization time (τM) with x with a maximum at x = 0.4. Furthermore, Gilbert damping co…
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The electronic band structure-controlled ultrafast demagnetization mechanism in Co2FexMn1-xSi Heusler alloy is underpinned by systematic variation of composition. We find the spin-flip scattering rate controlled by spin density of states at Fermi level is responsible for non-monotonic variation of ultrafast demagnetization time (τM) with x with a maximum at x = 0.4. Furthermore, Gilbert damping constant exhibits an inverse relationship with τM due to the dominance of inter-band scattering mechanism. This establishes a unified mechanism of ultrafast spin dynamics based on Fermi level position.
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Submitted 17 January, 2020;
originally announced January 2020.
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Prediction of Ternary Fluorooxoborates with Coplanar Triangle Units [BOxF3-x]x- From First-Principles
Authors:
Zhonglei Wei,
Wenyao Zhang,
Hao Zeng,
Hao Li,
Zhihua Yang,
Shilie Pan
Abstract:
Ten new ternary fluorooxoborate structures were obtained from first-principles prediction. Coplanar aligned triangle structure units [BO2F]2- and [BOF2]- like [BO3]3- in borates were found from the computational simulation. We identified new covalent coordination patterns of the F atom connected with the B atoms which are located in the bridging site, -B--F--B-. Besides, one molecular crystal with…
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Ten new ternary fluorooxoborate structures were obtained from first-principles prediction. Coplanar aligned triangle structure units [BO2F]2- and [BOF2]- like [BO3]3- in borates were found from the computational simulation. We identified new covalent coordination patterns of the F atom connected with the B atoms which are located in the bridging site, -B--F--B-. Besides, one molecular crystal with [B4O4F4] molecular unit was attached.
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Submitted 14 January, 2020;
originally announced January 2020.
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Uniaxial extensional viscosity of semidilute DNA solutions
Authors:
Sharadwata Pan,
Duc At Nguyen,
P. Sunthar,
T. Sridhar,
J. Ravi Prakash
Abstract:
The extensional rheology of polymeric liquids has been extensively examined through experiments and theoretical predictions. However, a systematic study of the extensional rheology of polymer solutions in the semidilute regime, in terms of examining the effects of concentration and molecular weight, has not been carried out so far. Prior studies of the shear rheology of semidilute polymer solution…
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The extensional rheology of polymeric liquids has been extensively examined through experiments and theoretical predictions. However, a systematic study of the extensional rheology of polymer solutions in the semidilute regime, in terms of examining the effects of concentration and molecular weight, has not been carried out so far. Prior studies of the shear rheology of semidilute polymer solutions have demonstrated that their behaviour is distinctively different from that observed in the dilute and concentrated regimes. This difference in behaviour is anticipated to be even more pronounced in extensional flows. In this work, the extensional rheology of linear, double-stranded DNA molecules, spanning an order of magnitude of molecular weights (25 to 289 kilobasepairs) and concentrations (0.03 to 0.3 mg/ml), has been investigated. DNA solutions are now used routinely as model polymeric systems due to their near-perfect monodispersity. Measurements have been carried out with a filament stretching rheometer since it is the most reliable method for obtaining an estimate of the elongational stress growth of a polymer solution. Transient and steady-state uniaxial extensional viscosities of DNA dissolved in a solvent under excess salt conditions, with a high concentration of sucrose in order to achieve a sufficiently high solvent viscosity, have been determined in the semidilute regime at room temperature. The dependence of the steady state uniaxial extensional viscosity on molecular weight, concentration and extension rate is measured with a view to determining if data collapse can be observed with an appropriate choice of variables. Steady state shear viscosity measurements suggest that sucrose-DNA interactions might play a role in determining the observed rheological behaviour of semidilute DNA solutions with sucrose as a component in the solvent.
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Submitted 13 October, 2019;
originally announced October 2019.
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Edge localization of spin waves in antidot multilayers with perpendicular magnetic anisotropy
Authors:
S. Pan,
S. Mondal,
M. Zelent,
R. Szwierz,
S. Pal,
O. Hellwig,
M. Krawczyk,
A. Barman
Abstract:
We study the spin-wave dynamics in nanoscale antidot lattices based on Co/Pd multilayers with perpendicular magnetic anisotropy. Using time-resolved magneto-optical Kerr effect measurements we demonstrate that the variation of the antidot shape introduces significant change in the spin-wave spectra, especially in the lower frequency range. By employing micromagnetic simulations we show that additi…
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We study the spin-wave dynamics in nanoscale antidot lattices based on Co/Pd multilayers with perpendicular magnetic anisotropy. Using time-resolved magneto-optical Kerr effect measurements we demonstrate that the variation of the antidot shape introduces significant change in the spin-wave spectra, especially in the lower frequency range. By employing micromagnetic simulations we show that additional peaks observed in the measured spectra are related to narrow shell regions around the antidots, where the magnetic anisotropy is reduced due to the Ga+ ion irradiation during the focused ion beam milling process of the antidot fabrication. The results point at new possibilities for exploitation of localized spin waves in out-of-plane magnetized thin films, which are easily tunable and suitable for magnonics applications.
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Submitted 23 June, 2019; v1 submitted 19 June, 2019;
originally announced June 2019.
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Observation of topological transition in high-T$_{c}$ superconductor FeTe$_{1-x}$Se$_{x}$/SrTiO$_{3}$(001) monolayers
Authors:
X. -L. Peng,
Y. Li,
X. -X. Wu,
H. -B. Deng,
X. Shi,
W. -H. Fan,
M. Li,
Y. -B. Huang,
T. Qian,
P. Richard,
J. -P. Hu,
S. -H. Pan,
H. -Q. Mao,
Y. -J. Sun,
H. Ding
Abstract:
Superconductors with topological surface or edge states have been intensively explored for the prospect of realizing Majorana bound states, which obey non-Abelian statistics and are crucial for topological quantum computation. The traditional routes for making topological insulator/superconductor and semiconductor/superconductor heterostructures suffer fabrication difficulties and can only work at…
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Superconductors with topological surface or edge states have been intensively explored for the prospect of realizing Majorana bound states, which obey non-Abelian statistics and are crucial for topological quantum computation. The traditional routes for making topological insulator/superconductor and semiconductor/superconductor heterostructures suffer fabrication difficulties and can only work at low temperature. Here, we use angle-resolved photoemission spectroscopy to directly observe the evolution of a topological transition of band structure nearby the Fermi level in two-dimensional high-T$_{c}$ superconductor FeTe$_{1-x}$Se$_{x}$/SrTiO$_{3}$(001) monolayers, fully consistent with our theoretical calculations. Furthermore, evidence of edge states is revealed by scanning tunneling spectroscopy with assistance of theoretical calculations. Our study provides a simple and tunable platform for realizing and manipulating Majorana states at high temperature.
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Submitted 14 March, 2019;
originally announced March 2019.
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Controlled co-excitation of direct and indirect ultrafast demagnetization in Co/Pd multilayer with large perpendicular magnetic anisotropy
Authors:
Santanu Pan,
Olav Hellwig,
Anjan Barman
Abstract:
Ever since its discovery in 1996, ultrafast demagnetization has ignited immense research interest due to its scientific rigor and technological potential. A flurry of recent theoretical and experimental investigations has proposed direct and indirect excitation processes in separate systems. However, it still lacks a unified mechanism and remains highly debatable. Here, for the first time, we demo…
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Ever since its discovery in 1996, ultrafast demagnetization has ignited immense research interest due to its scientific rigor and technological potential. A flurry of recent theoretical and experimental investigations has proposed direct and indirect excitation processes in separate systems. However, it still lacks a unified mechanism and remains highly debatable. Here, for the first time, we demonstrate that instead of either direct or indirect interaction, simultaneous and controlled excitation of both direct and indirect mechanisms of demagnetization are possible in a multilayers composed of repeated Co/Pd bi-layers. Moreover, we were able to modulate demagnetization time (from ~350 fs to ~750 fs) by fluence and thickness dependent indirect excitation due to heat current flowing vertically downward from top layers, which is combined with an altogether different scenario of direct irradiation. Finally, by regulating the pump wavelength we could effectively control the contribution of indirect process, which gives a confirmation to our understanding of the ultrafast demagnetization process.
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Submitted 20 December, 2018;
originally announced December 2018.
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Thermodynamics and Phase Transition in Shapere-Wilczek {\it fgh} model: Cosmological Time Crystal in Quadratic Gravity
Authors:
Praloy Das,
Supriya Pan,
Subir Ghosh
Abstract:
The Shapere-Wilczek model \cite{wil}, or so called $ fgh$ model, enjoys the remarkable features of a Time Crystal (TC) that has a non-trivial time dependence in its lowest energy state (or the classical ground state). We construct a particular form of $ fgh$ model (with specified $f,g,h$ functions) that is derived from a Mini-superspace version of a quadratic $f(R,R_{μν})$ gravity theory. Main par…
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The Shapere-Wilczek model \cite{wil}, or so called $ fgh$ model, enjoys the remarkable features of a Time Crystal (TC) that has a non-trivial time dependence in its lowest energy state (or the classical ground state). We construct a particular form of $ fgh$ model (with specified $f,g,h$ functions) that is derived from a Mini-superspace version of a quadratic $f(R,R_{μν})$ gravity theory. Main part of the investigation deals with thermodynamic properties of such systems from classical statistical mechanics perspective. Our analysis reveals the possibility of a {\it phase transition}. Because of the higher (time) derivative nature of the model computation of the partial function is non-trivial and requires newly discovered techniques. We speculate about possible connection between our model and the Multiverse scenario.
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Submitted 14 February, 2019; v1 submitted 15 October, 2018;
originally announced October 2018.
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Two-dimensional InSe/WS$_2$ heterostructure with enhanced optoelectronic performance in the visible region
Authors:
Lu-Lu Yang,
Jun-jie Shi,
Min Zhang,
Zhongming Wei,
Yi-min Ding,
Meng Wu,
Yong He,
Yu-lang Cen,
Wen-hui Guo,
Shu-hang Pan,
Xing-Lai Che,
Xiong Li,
Yao-Hui Zhu
Abstract:
Two-dimensional (2D) InSe and WS$_2$ exhibit promising characteristics for optoelectronic and photoelectrochemical applications, e.g. photodetection and photocatalytic water splitting. However, both of them have poor absorption of visible light due to wide band gaps. 2D InSe has high electron mobility but low hole mobility, while 2D WS$_2$ is on the opposite. Here, we design a 2D heterostructure c…
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Two-dimensional (2D) InSe and WS$_2$ exhibit promising characteristics for optoelectronic and photoelectrochemical applications, e.g. photodetection and photocatalytic water splitting. However, both of them have poor absorption of visible light due to wide band gaps. 2D InSe has high electron mobility but low hole mobility, while 2D WS$_2$ is on the opposite. Here, we design a 2D heterostructure composed of their monolayers and study its optoelectronic properties by first-principles calculations. Our results show that the heterostructure has a direct band gap of 2.19 eV, which is much smaller than those of the monolayers mainly due to a type-II band alignment: the valence band maximum and the conduction band minimum of monolayer InSe are lower than those of monolayer WS$_2$, respectively. The visible-light absorption is enhanced considerably, e.g. about fivefold (threefold) increase at the wavelength of 490 nm in comparison to monolayer InSe (WS$_2$). The type-II band alignment also facilitates the spatial separation of photogenerated electron-hole pairs, i.e., electrons (holes) reside preferably in the InSe (WS$_2$) layer. The two layers complement each other in carrier mobilities of the heterostructure: the photogenerated electrons and holes inherit the large mobilities from the InSe and WS$_2$ monolayers, respectively.
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Submitted 5 August, 2018;
originally announced August 2018.
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Shear thinning in dilute and semidilute solutions of polystyrene and DNA
Authors:
Sharadwata Pan,
Duc At Nguyen,
B. Duenweg,
P. Sunthar,
T. Sridhar,
J. Ravi Prakash
Abstract:
The viscosity of dilute and semidilute unentangled DNA solutions, in steady simple shear flow, has been measured across a range of temperatures and concentrations. For polystyrene solutions, measurements of viscosity have been carried out in the semidilute unentangled regime, while results of prior experimental measurements in the dilute regime have been used for the purpose of data analysis, and…
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The viscosity of dilute and semidilute unentangled DNA solutions, in steady simple shear flow, has been measured across a range of temperatures and concentrations. For polystyrene solutions, measurements of viscosity have been carried out in the semidilute unentangled regime, while results of prior experimental measurements in the dilute regime have been used for the purpose of data analysis, and for comparison with the behaviour of DNA solutions. Interpretation of the shear rate dependence of viscosity in terms of suitably defined non-dimensional variables, is shown to lead to master plots, independent of temperature and concentration, in each of the two concentration regimes. In the case of semidilute unentangled solutions, defining the Weissenberg number in terms of a concentration dependent large scale relaxation time is found not to lead to data collapse across different concentrations. On the other hand, the use of an alternative relaxation time, with the concentration dependence of a single correlation blob, suggests the existence of universal shear thinning behaviour at large shear rates.
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Submitted 6 May, 2018; v1 submitted 22 October, 2017;
originally announced October 2017.
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Spin waves in periodic antidot waveguide of complex base
Authors:
Santanu Pan,
Jarosław W. Kłos,
Szymon Mieszczak,
Anjan Barman,
Maciej Krawczyk
Abstract:
We consider the planar magnonic waveguide with a periodic sequence of antidots forming zig-zag pattern, where two neighboring antidots are shifted towards the opposite edges of the waveguide. This system has a complex base with two antidots in one unit cell. The Brillouin zone is here two-times narrower than the Brillouin zone for the waveguide without displacement of antidots. We have shown that…
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We consider the planar magnonic waveguide with a periodic sequence of antidots forming zig-zag pattern, where two neighboring antidots are shifted towards the opposite edges of the waveguide. This system has a complex base with two antidots in one unit cell. The Brillouin zone is here two-times narrower than the Brillouin zone for the waveguide without displacement of antidots. We have shown that for dispersion relation folded into narrower Brillouin zone, new frequency gap can be opened and their width can be controlled by the shift of the antidots. We found that, the different strength of spin wave pinning at the edges of the periodic waveguide (and their antidots)determines the dependence of the width of gap on the shift of antidots. For the systems with completely free or ideally pinned magnetization, these dependencies are qualitatively different. We have found an optimum shift of antidot for maximzing the width of the gap for the system with pinned magnetization. More interestingly, we notice that for this kind of geometry of the structure, majority of the modes are doubly degenerate at the edge of Brillouin zone and have a finite group velocity at the very close vicinity of the edge of Brillouin zone, for larger values of antidot shift. This empowers us to design magnonic waveguide to steer the spin waves.
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Submitted 16 February, 2017; v1 submitted 15 February, 2017;
originally announced February 2017.