Showing 1–6 of 6 results for author: Panna, A R

Constructing 100 MΩ and 1 GΩ Resistance Standards via Star-Mesh Transformations

Authors: Dean G. Jarrett, Albert F. Rigosi, Dominick S. Scaletta, Ngoc Thanh Mai Tran, Heather M. Hill, Alireza R. Panna, Cheng Hsueh Yang, Yanfei Yang, Randolph E. Elmquist, David B. Newell

Abstract: A recent mathematical framework for optimizing resistor networks to achieve values in the MΩ through GΩ levels was employed for two specific cases. Objectives here include proof of concept and identification of possible apparatus limitations for future experiments involving graphene-based quantum Hall array resistance standards. Using fractal-like, or recursive, features of the framework allows on… ▽ More A recent mathematical framework for optimizing resistor networks to achieve values in the MΩ through GΩ levels was employed for two specific cases. Objectives here include proof of concept and identification of possible apparatus limitations for future experiments involving graphene-based quantum Hall array resistance standards. Using fractal-like, or recursive, features of the framework allows one to calculate and implement network designs with substantially lower-valued resistors. The cases of 100 MΩ and 1 GΩ demonstrate that, theoretically, one would not need more than 100 quantum Hall elements to achieve these high resistances. △ Less

Submitted 2 February, 2024; originally announced February 2024.

Fractal-like star-mesh transformations using graphene quantum Hall arrays

Authors: Dominick S. Scaletta, Swapnil M. Mhatre, Ngoc Thanh Mai Tran, Cheng-Hsueh Yang, Heather M. Hill, Yanfei Yang, Linli Meng, Alireza R. Panna, Shamith U. Payagala, Randolph E. Elmquist, Dean G. Jarrett, David B. Newell, Albert F. Rigosi

Abstract: A mathematical approach is adopted for optimizing the number of total device elements required for obtaining high effective quantized resistances in graphene-based quantum Hall array devices. This work explores an analytical extension to the use of star-mesh transformations such that fractal-like, or recursive, device designs can yield high enough resistances (like 1 EΩ, arguably the highest resis… ▽ More A mathematical approach is adopted for optimizing the number of total device elements required for obtaining high effective quantized resistances in graphene-based quantum Hall array devices. This work explores an analytical extension to the use of star-mesh transformations such that fractal-like, or recursive, device designs can yield high enough resistances (like 1 EΩ, arguably the highest resistance with meaningful applicability) while still being feasible to build with modern fabrication techniques. Epitaxial graphene elements are tested, whose quantized Hall resistance at the nu=2 plateau (R_H = 12906.4 Ω) becomes the building block for larger effective, quantized resistances. It is demonstrated that, mathematically, one would not need more than 200 elements to achieve the highest pertinent resistances △ Less

Submitted 27 September, 2023; originally announced September 2023.

A unified realization of electrical quantities from the quantum International System of Units

Authors: Linsey K. Rodenbach, Jason M. Underwood, Ngoc Thanh Mai Tran, Alireza R. Panna, Molly P. Andersen, Zachary S. Barcikowski, Shamith U. Payagala, Peng Zhang, Lixuan Tai, Kang L. Wang, Dean G. Jarrett, Randolph E. Elmquist, David B. Newell, Albert F. Rigosi, David Goldhaber-Gordon

Abstract: In the revised International System of Units (SI), the ohm and the volt are realized from the von Klitzing constant and the Josephson constant, and a practical realization of the ampere is possible by applying Ohm's law directly to the quantum Hall and Josephson effects. As a result, it is possible to create an instrument capable of realizing all three primary electrical units, but the development… ▽ More In the revised International System of Units (SI), the ohm and the volt are realized from the von Klitzing constant and the Josephson constant, and a practical realization of the ampere is possible by applying Ohm's law directly to the quantum Hall and Josephson effects. As a result, it is possible to create an instrument capable of realizing all three primary electrical units, but the development of such a system remains challenging. Here we report a unified realization of the volt, ohm, and ampere by integrating a quantum anomalous Hall resistor (QAHR) and a programmable Josephson voltage standard (PJVS) in a single cryostat. Our system has a quantum voltage output that ranges from 0.24 mV to 6.5 mV with combined relative uncertainties down to 3 $μ$V/V. The QAHR provides a realization of the ohm at zero magnetic field with uncertainties near 1 $μΩ$/$Ω$. We use the QAHR to convert a longitudinal current to a quantized Hall voltage and then directly compare that against the PJVS to realize the ampere. We determine currents in the range of 9.33 nA to 252 nA, and our lowest uncertainty is 4.3 $μ$A/A at 83.9 nA. For other current values, a systematic error that ranges from -10 $μ$A/A to -30 $μ$A/A is present due to the imperfect isolation of the PJVS microwave bias. △ Less

Submitted 12 August, 2025; v1 submitted 31 July, 2023; originally announced August 2023.

Comments: 16 pages, 4 figures, 15 pages of supplemental information

Star-Mesh Quantized Hall Array Resistance Devices

Authors: Dean G. Jarrett, Ching-Chen Yeh, Shamith U. Payagala, Alireza R. Panna, Yanfei Yang, Linli Meng, Swapnil M. Mhatre, Ngoc Thanh Mai Tran, Heather M. Hill, Dipanjan Saha, Randolph E. Elmquist, David B. Newell, Albert F. Rigosi

Abstract: Advances in the development of graphene-based technology have enabled improvements in DC resistance metrology. Devices made from epitaxially grown graphene have replaced the GaAs-based counterparts, leading to an easier and more accessible realization of the ohm. By optimizing the scale of the growth, it has become possible to fabricate quantized Hall array resistance standards (QHARS) with nomina… ▽ More Advances in the development of graphene-based technology have enabled improvements in DC resistance metrology. Devices made from epitaxially grown graphene have replaced the GaAs-based counterparts, leading to an easier and more accessible realization of the ohm. By optimizing the scale of the growth, it has become possible to fabricate quantized Hall array resistance standards (QHARS) with nominal values between 1 kΩ and 1.29 MΩ. One of these QHARS device designs accommodates a value of about 1.01 MΩ, which made it an ideal candidate to pursue a proof-of-concept that graphene-based QHARS devices are suitable for forming wye-delta resistance networks. In this work, the 1.01 MΩ array output nearly 20.6 MΩ due to the wye-delta transformation, which itself is a special case of star-mesh transformations. These mathematical equivalence principles allow one to extend the QHR to the 100 MΩ and 10 GΩ resistance levels with fewer array elements than would be necessary for a single array with many more elements in series. The 1.01 MΩ device shows promise that the wye-delta transformation can shorten the calibration chain, and, more importantly, provide a chain with a more direct line to the quantum SI. △ Less

Submitted 21 April, 2023; originally announced April 2023.

Chromium-Doped Bismuth Antimony Telluride for Future Quantum Hall Resistance Standards

Authors: Albert F. Rigosi Linsey K. Rodenbach, Alireza R. Panna, Shamith U. Payagala, Ilan T. Rosen, Joseph A. Hagmann, Peng Zhang, Lixuan Tai, Kang L. Wang, Dean G. Jarrett, Randolph E. Elmquist, Jason M. Underwood, David B. Newell, David Goldhaber-Gordon

Abstract: Since 2017, epitaxial graphene has been the base material for the US national standard for resistance. A future avenue of research within electrical metrology is to remove the need for strong magnetic fields, as is currently the case for devices exhibiting the quantum Hall effect. The quantum Hall effect is just one of many research endeavours that revolve around recent quantum physical phenomena… ▽ More Since 2017, epitaxial graphene has been the base material for the US national standard for resistance. A future avenue of research within electrical metrology is to remove the need for strong magnetic fields, as is currently the case for devices exhibiting the quantum Hall effect. The quantum Hall effect is just one of many research endeavours that revolve around recent quantum physical phenomena like composite fermions, charge density waves, and topological properties [1-2]. New materials, like magnetically doped topological insulators (MTIs), offer access to the quantum anomalous Hall effect, which in its ideal form, could become a future resistance standard needing only a small permanent magnet to activate a quantized resistance value [3-5]. Furthermore, these devices could operate at zero-field for measurements, making the dissemination of the ohm more economical and portable. Here we present results on precision measurements of the h/e2 quantized plateau of Cr-Doped (BixSb1-x)2Te3 and give them context by comparing them to modern graphene-based resistance standards. Ultimately, MTI-based devices could be combined in a single system with magnetic-field-averse Josephson voltage standards to obtain an alternative quantum current standard. △ Less

Submitted 12 May, 2022; originally announced May 2022.

Designs for programmable quantum resistance standards based on epitaxial graphene p-n junctions

Authors: Jiuning Hu, Albert F. Rigosi, Mattias Kruskopf, Yanfei Yang, Bi-Yi Wu, Jifa Tian, Alireza R. Panna, Hsin-Yen Lee, Shamith U. Payagala, George R. Jones, Marlin E. Kraft, Dean G. Jarrett, Kenji Watanabe, Takashi Taniguchi, Randolph E. Elmquist, David B. Newell

Abstract: We report the fabrication and measurement of top gated epitaxial graphene p-n junctions where exfoliated hexagonal boron nitride (h-BN) is used as the gate dielectric. The four-terminal longitudinal resistance across a single junction is well quantized at the von Klitzing constant R_K with a relative uncertainty of 10-7. After the exploration of numerous parameter spaces, we summarize the conditio… ▽ More We report the fabrication and measurement of top gated epitaxial graphene p-n junctions where exfoliated hexagonal boron nitride (h-BN) is used as the gate dielectric. The four-terminal longitudinal resistance across a single junction is well quantized at the von Klitzing constant R_K with a relative uncertainty of 10-7. After the exploration of numerous parameter spaces, we summarize the conditions upon which these devices could function as potential resistance standards. Furthermore, we offer designs of programmable electrical resistance standards over six orders of magnitude by using external gating. △ Less

Submitted 10 January, 2022; originally announced January 2022.