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High-Q superconducting microwave resonators using MBE titanium nitride
Authors:
Anand Ithepalli,
Haoran Lu,
Eegene Clara Chung,
Xiangqin Wang,
Amit Rohan Rajapurohita,
Keun-Yeol Park,
Celesta S. Chang,
Peter McMahon,
Huili Grace Xing,
David Muller,
Valla Fatemi,
Debdeep Jena
Abstract:
Using molecular beam epitaxy, we have realized thin films of titanium nitride (TiN) on c-plane sapphire that exhibit the lowest observed full-width at half maximum X-ray rocking curve width of 18 arcsec. Though the (111) oriented TiN exhibits an abrupt and crystalline interface with sapphire, for the first time we observe sub-surface defects in the sapphire substrate, which nucleate structural def…
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Using molecular beam epitaxy, we have realized thin films of titanium nitride (TiN) on c-plane sapphire that exhibit the lowest observed full-width at half maximum X-ray rocking curve width of 18 arcsec. Though the (111) oriented TiN exhibits an abrupt and crystalline interface with sapphire, for the first time we observe sub-surface defects in the sapphire substrate, which nucleate structural defects in the epitaxial TiN layer. Using quarter-wavelength coplanar waveguide (CPW) resonators in a 3 \textmu m/6 \textmu m/3 \textmu m gap/strip/gap lines in a hanger geometry, we find the internal quality factor of the TiN resonators to be $>10^{6}$ in the single-photon $\langle n \rangle \sim 1$ limit at 5.8 GHz and 10 mK, rising to $>20 \times 10^{6}$ at $\langle n \rangle \sim 10^{6}$. The results are of high interest for applications of superconducting TiN in several areas, and provide a path towards epitaxial Josephson junctions with crystalline barriers in the future for high coherence qubits.
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Submitted 19 July, 2026; v1 submitted 16 July, 2026;
originally announced July 2026.
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Strain engineering of Andreev spin qubits in Germanium
Authors:
Vittorio Coppini,
Patrick Del Vecchio,
Antonio L. R. Manesco,
Anton Akhmerov,
Valla Fatemi,
Bernard van Heck,
Stefano Bosco
Abstract:
Planar germanium heterostructures are promising hosts for hybrid quantum devices due to their compatibility with superconductors, low material disorder, and relaxed fabrication constraints. Also, the potentially low density of nuclear spins and strong spin-orbit interaction make germanium attractive for coherent spin physics. However, recent microwave spectroscopy experiments were unable to resolv…
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Planar germanium heterostructures are promising hosts for hybrid quantum devices due to their compatibility with superconductors, low material disorder, and relaxed fabrication constraints. Also, the potentially low density of nuclear spins and strong spin-orbit interaction make germanium attractive for coherent spin physics. However, recent microwave spectroscopy experiments were unable to resolve a spin-splitting of bound states in germanium Josephson junctions, the prerequisite for defining and controlling Andreev spin qubits. Here, we argue that compressive strain is the key mechanism suppressing spin splitting in current devices. Furthermore, we propose unstrained and tensile-strained heterostructures, fully compatible with state-of-the-art growth technology, that significantly enhance the relevant spin-orbit effect. By numerically simulating ballistic Josephson junctions, we predict spin splittings comfortably in the GHz range, more than 2 orders of magnitude larger than compressively strained cases, and all-electric quantum gates in a hundred nanoseconds. Our results establish strain engineering as a key design principle for realizing Andreev spin qubits in germanium-based devices.
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Submitted 20 May, 2026; v1 submitted 24 April, 2026;
originally announced April 2026.
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Fabrication effects on Niobium oxidation and surface contamination in Niobium-metal bilayers using X-ray photoelectron spectroscopy
Authors:
Tathagata Banerjee,
Maciej W. Olszewski,
Valla Fatemi
Abstract:
Superconducting resonators and qubits are limited by dielectric losses from surface oxides. Surface oxides are mitigated through various strategies such as the addition of a metal capping layer, surface passivation, and acid processing. In this study, we demonstrate the use of X-ray photoelectron spectroscopy (XPS) as a rapid characterization tool to study the effectiveness cap layers for niobium…
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Superconducting resonators and qubits are limited by dielectric losses from surface oxides. Surface oxides are mitigated through various strategies such as the addition of a metal capping layer, surface passivation, and acid processing. In this study, we demonstrate the use of X-ray photoelectron spectroscopy (XPS) as a rapid characterization tool to study the effectiveness cap layers for niobium for further device fabrication. We non-destructively evaluate 17 capping layers to characterize their ability to prevent oxygen diffusion, and the effects of standard fabrication processes -- annealing, resist stripping, and acid cleaning. We downselect for resilient capping layers and test their microwave resonator performance.
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Submitted 29 January, 2026;
originally announced January 2026.
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Krypton-sputtered tantalum films for scalable high-performance quantum devices
Authors:
Maciej W. Olszewski,
Lingda Kong,
Simon Reinhardt,
Daniel Tong,
Xinyi Du,
Gabriele Di Gianluca,
Haoran Lu,
Saswata Roy,
Luojia Zhang,
Aleksandra B. Biedron,
David A. Muller,
Valla Fatemi
Abstract:
Superconducting qubits based on tantalum (Ta) thin films have demonstrated the highest-performing microwave resonators and qubits. This makes Ta an attractive material for superconducting quantum computing applications, but, so far, direct deposition has largely relied on high substrate temperatures exceeding \SI{400}{\celsius} to achieve the body-centered cubic phase, BCC (\textalpha-Ta). This le…
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Superconducting qubits based on tantalum (Ta) thin films have demonstrated the highest-performing microwave resonators and qubits. This makes Ta an attractive material for superconducting quantum computing applications, but, so far, direct deposition has largely relied on high substrate temperatures exceeding \SI{400}{\celsius} to achieve the body-centered cubic phase, BCC (\textalpha-Ta). This leads to compatibility issues for scalable fabrication leveraging standard semiconductor fabrication lines. Here, we show that changing the sputter gas from argon (Ar) to krypton (Kr) promotes BCC Ta synthesis on silicon (Si) at temperatures as low as \SI{200}{\celsius}, providing a wide process window compatible with back-end-of-the-line fabrication standards. Furthermore, we find these films to have substantially higher electronic conductivity, consistent with clean-limit superconductivity. We validated the microwave performance through coplanar waveguide resonator measurements, finding that films deposited at \SI{250}{\celsius} and \SI{350}{\celsius} exhibit a tight performance distribution at the state of the art. Higher temperature-grown films exhibit higher losses, in correlation with the degree of Ta/Si intermixing revealed by cross-sectional transmission electron microscopy. Finally, with these films, we demonstrate transmon qubits with a relatively compact, \SI{20}{\micro\meter} capacitor gap, achieving a median quality factor up to 14 million.
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Submitted 27 January, 2026;
originally announced January 2026.
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Loopless multiterminal quantum circuits at odd parity
Authors:
Antonio Manesco,
Anton Akhmerov,
Valla Fatemi
Abstract:
We theoretically investigate loopless multiterminal hybrid superconducting devices at odd fermion parity with time-reversal symmetry. We find that the energy-phase relationship has a double minimum corresponding to opposite windings of the superconducting phases. Spin-orbit coupling adds multi-axial spin splittings, which contrasts with two-terminal devices where spin dependence is uniaxial. Capac…
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We theoretically investigate loopless multiterminal hybrid superconducting devices at odd fermion parity with time-reversal symmetry. We find that the energy-phase relationship has a double minimum corresponding to opposite windings of the superconducting phases. Spin-orbit coupling adds multi-axial spin splittings, which contrasts with two-terminal devices where spin dependence is uniaxial. Capacitive shunting localizes quantum circuit states in the wells and exponentially suppresses their splitting. For weak spin-orbit strength, the system has a four-dimensional spin-chirality low-energy subspace which can be universally controlled with electric fields only.
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Submitted 28 May, 2026; v1 submitted 19 January, 2026;
originally announced January 2026.
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Andreev spin qubits bound to Josephson vortices in spin-orbit coupled planar Josephson junctions
Authors:
Katharina Laubscher,
Valla Fatemi,
Jay D. Sau
Abstract:
We propose a variant of Andreev spin qubits (ASQs) defined in planar Josephson junctions based on spin-orbit coupled two-dimensional electron gases (2DEGs) in a weak out-of-plane magnetic field. The magnetic field induces a linear phase gradient across the junction, generating Josephson vortices that can host low-energy Andreev bound states (ABSs). We show that, in certain parameter regimes, the c…
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We propose a variant of Andreev spin qubits (ASQs) defined in planar Josephson junctions based on spin-orbit coupled two-dimensional electron gases (2DEGs) in a weak out-of-plane magnetic field. The magnetic field induces a linear phase gradient across the junction, generating Josephson vortices that can host low-energy Andreev bound states (ABSs). We show that, in certain parameter regimes, the combined effect of the phase gradient and spin-orbit coupling stabilizes an odd-fermion parity ground state, where a single Josephson vortex binds a spinful low-energy degree of freedom that is energetically separated from the other ABSs. This low-energy degree of freedom can be exploited to define a special type of ASQ, which we dub the vortex spin qubit (VSQ). We show that single-qubit gates for VSQs can be performed via flux driving, while readout can be achieved by adapting standard circuit quantum electrodynamics (cQED) techniques developed for conventional ASQs. We further outline how an entangling two-qubit gate can be performed using an ac current drive. We argue that VSQs offer prospects for a substantial reduction in device complexity and hardware overhead compared to conventional ASQ implementations, while preserving key advantages such as supercurrent-based readout, single-qubit gates, and long-range two-qubit gates.
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Submitted 11 December, 2025;
originally announced December 2025.
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Active-Learning Inspired $\textit{Ab Initio}$ Theory-Experiment Loop Approach for Management of Material Defects: Application to Superconducting Qubits
Authors:
Sarvesh Chaudhari,
Cristóbal Méndez,
Rushil Choudhary,
Tathagata Banerjee,
Maciej W. Olszewski,
Jadrien T. Paustian,
Jaehong Choi,
Zhaslan Baraissov,
Raul Hernandez,
David A. Muller,
B. L. T. Plourde,
Gregory D. Fuchs,
Valla Fatemi,
Tomás A. Arias
Abstract:
Surface oxides are associated with two-level systems (TLSs) that degrade the performance of niobium-based superconducting quantum computing devices. To address this, we introduce a predictive framework for selecting metal capping layers that inhibit niobium oxide formation. Using DFT-calculated oxygen interstitial and vacancy energies as thermodynamic descriptors, we train a logistic regression mo…
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Surface oxides are associated with two-level systems (TLSs) that degrade the performance of niobium-based superconducting quantum computing devices. To address this, we introduce a predictive framework for selecting metal capping layers that inhibit niobium oxide formation. Using DFT-calculated oxygen interstitial and vacancy energies as thermodynamic descriptors, we train a logistic regression model on a limited set of experimental outcomes to successfully predict the likelihood of oxide formation beneath different capping materials. This approach identifies Zr, Hf, and Ta as effective diffusion barriers. Our analysis further reveals that the oxide formation energy per oxygen atom serves as an excellent standalone descriptor for predicting barrier performance. By combining this new descriptor with lattice mismatch as a secondary criterion to promote structurally coherent interfaces, we identify Zr, Ta, and Sc as especially promising candidates. This closed-loop strategy integrates first-principles theory, machine learning, and limited experimental data to enable rational design of next-generation materials.
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Submitted 25 February, 2026; v1 submitted 2 October, 2025;
originally announced October 2025.
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Low barrier ZrO$_x$-based Josephson junctions
Authors:
Jaehong Choi,
Maciej Olszewski,
Luojia Zhang,
Zhaslan Baraissov,
Tathagata Banerjee,
Kushagra Aggarwal,
Sarvesh Chaudhari,
Tomás A. Arias,
David A. Muller,
Valla Fatemi,
Gregory D. Fuchs
Abstract:
The Josephson junction is a crucial element in superconducting devices, and niobium is a promising candidate for the superconducting material due to its large energy gap relative to aluminum. AlO$_x$ has long been regarded as the highest quality oxide tunnel barrier and is often used in niobium-based junctions. Here we propose ZrO$_x$ as an alternative tunnel barrier material for Nb electrodes. We…
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The Josephson junction is a crucial element in superconducting devices, and niobium is a promising candidate for the superconducting material due to its large energy gap relative to aluminum. AlO$_x$ has long been regarded as the highest quality oxide tunnel barrier and is often used in niobium-based junctions. Here we propose ZrO$_x$ as an alternative tunnel barrier material for Nb electrodes. We theoretically estimate that zirconium oxide has excellent oxygen retention properties and experimentally verify that there is no significant oxygen diffusion leading to NbO$_x$ formation in the adjacent Nb electrode. We develop a top-down, subtractive fabrication process for Nb/Zr-ZrO$_x$/Nb Josephson junctions, which enables scalability and large-scale production of superconducting electronics. Using cross sectional scanning transmission electron microscopy, we experimentally find that depending on the Zr thickness, ZrO$_x$ tunnel barriers can be fully crystalline with chemically abrupt interfaces with niobium. Further analysis using electron energy loss spectroscopy reveals that ZrO$_x$ corresponds to tetragonal ZrO$_2$. Room temperature characterization of fabricated junctions using Simmons' model shows that ZrO$_2$ exhibits a low tunnel barrier height, which is promising in merged-element transmon applications. Low temperature transport measurements reveal sub-gap structure, while the low-voltage sub-gap resistance remains in the megaohm range.
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Submitted 15 August, 2025;
originally announced August 2025.
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Fast readout of quantum dot spin qubits via Andreev spins
Authors:
Michèle Jakob,
Katharina Laubscher,
Patrick Del Vecchio,
Anasua Chatterjee,
Valla Fatemi,
Stefano Bosco
Abstract:
Spin qubits in semiconducting quantum dots are currently limited by slow readout processes, which are orders of magnitude slower than gate operations. In contrast, Andreev spin qubits benefit from fast measurement schemes enabled by the large resonator couplings of superconducting qubits but suffer from reduced coherence during qubit operations. Here, we propose fast and high-fidelity measurement…
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Spin qubits in semiconducting quantum dots are currently limited by slow readout processes, which are orders of magnitude slower than gate operations. In contrast, Andreev spin qubits benefit from fast measurement schemes enabled by the large resonator couplings of superconducting qubits but suffer from reduced coherence during qubit operations. Here, we propose fast and high-fidelity measurement protocols based on an electrically-tunable coupling between quantum dot and Andreev spin qubits. In realistic devices, this coupling can be made sufficiently strong to enable high-fidelity readout well below microseconds, potentially enabling mid-circuit measurements. Crucially, the electrical tunability of our coupler permits to switch it off during idle periods, minimizing crosstalk and measurement back-action. Our approach is fully compatible with germanium-based devices and paves the way for scalable quantum computing architectures by leveraging the advantages of heterogeneous qubit implementations.
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Submitted 24 June, 2025;
originally announced June 2025.
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Full characterization of measurement-induced transitions of a superconducting qubit
Authors:
Thomas Connolly,
Pavel D. Kurilovich,
Vladislav D. Kurilovich,
Charlotte G. L. Bøttcher,
Sumeru Hazra,
Wei Dai,
Andy Z. Ding,
Vidul R. Joshi,
Heekun Nho,
Spencer Diamond,
Daniel K. Weiss,
Valla Fatemi,
Luigi Frunzio,
Leonid I. Glazman,
Michel H. Devoret
Abstract:
Repeated quantum non-demolition measurement is a cornerstone of quantum error correction protocols. In superconducting qubits, the speed of dispersive state readout can be enhanced by increasing the power of the readout tone. However, such an increase has been found to result in additional qubit state transitions that violate the desired quantum non-demolition character of the measurement. Recentl…
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Repeated quantum non-demolition measurement is a cornerstone of quantum error correction protocols. In superconducting qubits, the speed of dispersive state readout can be enhanced by increasing the power of the readout tone. However, such an increase has been found to result in additional qubit state transitions that violate the desired quantum non-demolition character of the measurement. Recently, the readout of a transmon superconducting qubit was improved by using a tone with frequency much larger than the qubit frequency. Here, we experimentally identify the mechanisms of readout-induced transitions in this regime. In the dominant mechanism, the energy of an incoming readout photon is partially absorbed by the transmon and partially returned to the transmission line as a photon with lower frequency. Other mechanisms involve the excitation of unwanted package modes, decay via material defects, and, at higher qubit frequencies, the activation of undesired resonances in the transmon spectrum. Our work provides a comprehensive characterization of superconducting qubit state transitions caused by a strong drive.
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Submitted 5 June, 2025;
originally announced June 2025.
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Low-loss Nb on Si superconducting resonators from a dual-use spintronics deposition chamber and with acid-free post-processing
Authors:
Maciej W. Olszewski,
Jadrien T. Paustian,
Tathagata Banerjee,
Haoran Lu,
Jorge L. Ramirez,
Nhi Nguyen,
Kiichi Okubo,
Rohit Pant,
Aleksandra B. Biedron,
Daniel C. Ralph,
Christopher J. K. Richardson,
Gregory D. Fuchs,
Corey Rae H. McRae,
Ivan V. Pechenezhskiy,
B. L. T. Plourde,
Valla Fatemi
Abstract:
Magnetic impurities are known to degrade superconductivity. For this reason, physical vapor deposition chambers that have previously been used for magnetic materials have generally been avoided for making high-quality superconducting resonator devices. In this article, we show by example that such chambers can be used for this purpose; with Nb films sputtered in a chamber that continues to be used…
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Magnetic impurities are known to degrade superconductivity. For this reason, physical vapor deposition chambers that have previously been used for magnetic materials have generally been avoided for making high-quality superconducting resonator devices. In this article, we show by example that such chambers can be used for this purpose; with Nb films sputtered in a chamber that continues to be used for magnetic materials, we demonstrate compact (\SI{3}{\micro\meter} gap) coplanar waveguide resonators with low-power internal quality factors near one million. We achieve this using a resist strip bath with no post-fabrication acid treatment, which results in performance comparable to previous strip baths with acid treatments. We also find evidence that this improved resist strip bath provides a better surface chemical template for post-fabrication hydrogen fluoride processing. These results are consistent across three Si substrate preparation methods, including a \SI{700}{\celsius} anneal. These results will inform nanofabrication for other superconducting materials and the integration of magnetic materials for hybrid systems.
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Submitted 9 January, 2026; v1 submitted 17 March, 2025;
originally announced March 2025.
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Growth and characterization of single crystal cubic TaN and hexagonal Ta$_2$N films on c-plane Sapphire
Authors:
Anand Ithepalli,
Amit Rohan Rajapurohita,
Arjan Singh,
Rishabh Singh,
John Wright,
Farhan Rana,
Valla Fatemi,
Huili,
Xing,
Debdeep Jena
Abstract:
Two single crystal phases of tantalum nitride were stabilized on c-plane sapphire using molecular beam epitaxy. The phases were identified to be $δ$-TaN with a rocksalt cubic structure and $γ$-Ta$_2$N with a hexagonal structure. Atomic force microscopy scans revealed smooth surfaces for both the films with root mean square roughnesses less than 0.3 nm. Phase-purity of these films was determined by…
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Two single crystal phases of tantalum nitride were stabilized on c-plane sapphire using molecular beam epitaxy. The phases were identified to be $δ$-TaN with a rocksalt cubic structure and $γ$-Ta$_2$N with a hexagonal structure. Atomic force microscopy scans revealed smooth surfaces for both the films with root mean square roughnesses less than 0.3 nm. Phase-purity of these films was determined by x-ray diffraction. Raman spectrum of the phase-pure $δ$-TaN and $γ$-Ta$_2$N obtained will serve as a future reference to determine phase-purity of tantalum nitride films. Further, the room-temperature and low-temperature electronic transport measurements indicated that both of these phases are metallic at room temperature with resistivities of 586.2 $μΩ$-cm for the 30 nm $δ$-TaN film and 75.5 $μΩ$-cm for the 38 nm $γ$-Ta$_2$N film and become superconducting below 3.6 K and 0.48 K respectively. The superconducting transition temperature reduces with applied magnetic field as expected. Ginzburg-Landau fitting revealed a 0 K critical magnetic field and coherence length of 18 T and 4.2 nm for the 30 nm $δ$-TaN film and 96 mT and 59 nm for the 38 nm $γ$-Ta$_2$N film. These tantalum nitride films are of high interest for superconducting resonators and qubits.
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Submitted 25 February, 2025;
originally announced February 2025.
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Andreev spin relaxation time in a shadow-evaporated InAs weak link
Authors:
Haoran Lu,
David F. Bofill,
Zhenhai Sun,
Thomas Kanne,
Jesper Nygård,
Morten Kjaergaard,
Valla Fatemi
Abstract:
Andreev spin qubits are a new qubit platform that merges superconductivity with semiconductor physics. The mechanisms dominating observed energy relaxation remain unidentified. We report here on three steps taken to address these questions in an InAs nanowire weak link. First, we designed a microwave readout circuit tuned to be directly sensitive to the spin-dependent inductance of the weak link s…
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Andreev spin qubits are a new qubit platform that merges superconductivity with semiconductor physics. The mechanisms dominating observed energy relaxation remain unidentified. We report here on three steps taken to address these questions in an InAs nanowire weak link. First, we designed a microwave readout circuit tuned to be directly sensitive to the spin-dependent inductance of the weak link so that higher orbital states are not necessary for readout -- this resulted in larger windows in parameter space in which the spin state properties can be probed. Second, we implemented a successful gap-engineering strategy to mitigate quasiparticle poisoning. Third, the weak link was fabricated by \textit{in situ} shadow evaporation, which has been shown to improve atomic-scale disorder. We show how our design allows characterization of the spin stability and coherence over the full range of magnetic flux and gate voltage of an odd parity bias point. The spin relaxation and dephasing rates are comparable with the best devices previously reported, suggestive that surface atomic-scale disorder and QP poisoning are not linked to spin relaxation in InAs nanowires. Our design strategies are transferrable to novel materials platforms for Andreev qubits such as germanium and carbon.
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Submitted 20 January, 2025;
originally announced January 2025.
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Frozonium: Freezing Anharmonicity in Floquet Superconducting Circuits
Authors:
Keiran Lewellen,
Rohit Mukherjee,
Haoyu Guo,
Saswata Roy,
Valla Fatemi,
Debanjan Chowdhury
Abstract:
Floquet engineering is a powerful method that can be used to modify the properties of interacting many-body Hamiltonians via the application of periodic time-dependent drives. Here we consider the physics of an inductively shunted superconducting Josephson junction in the presence of Floquet drives in the fluxonium regime and beyond, which we dub the frozonium artificial atom. We find that in the…
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Floquet engineering is a powerful method that can be used to modify the properties of interacting many-body Hamiltonians via the application of periodic time-dependent drives. Here we consider the physics of an inductively shunted superconducting Josephson junction in the presence of Floquet drives in the fluxonium regime and beyond, which we dub the frozonium artificial atom. We find that in the vicinity of special ratios of the drive amplitude and frequency, the many-body dynamics can be tuned to that of an effectively linear bosonic oscillator, with additional nonlinear corrections that are suppressed in higher powers of the drive frequency. By analyzing the inverse participation ratios between the time-evolved frozonium wavefunctions and the eigenbasis of a linear oscillator, we demonstrate the ability to achieve a novel dynamical control using a combination of numerical exact diagonalization and Floquet-Magnus expansion. We discuss the physics of resonances between quasi-energy states induced by the drive, and ways to mitigate their effects. We also highlight the enhanced protection of frozonium against external sources of noise present in experimental setups. This work lays the foundation for future applications in quantum memory and bosonic quantum control using superconducting circuits.
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Submitted 17 March, 2026; v1 submitted 17 January, 2025;
originally announced January 2025.
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High-frequency readout free from transmon multi-excitation resonances
Authors:
Pavel D. Kurilovich,
Thomas Connolly,
Charlotte G. L. Bøttcher,
Daniel K. Weiss,
Sumeru Hazra,
Vidul R. Joshi,
Andy Z. Ding,
Heekun Nho,
Spencer Diamond,
Vladislav D. Kurilovich,
Wei Dai,
Valla Fatemi,
Luigi Frunzio,
Leonid I. Glazman,
Michel H. Devoret
Abstract:
Quantum computation will rely on quantum error correction to counteract decoherence. Successfully implementing an error correction protocol requires the fidelity of qubit operations to be well-above error correction thresholds. In superconducting quantum computers, measurement of the qubit state remains the lowest-fidelity operation. For the transmon, a prototypical superconducting qubit, measurem…
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Quantum computation will rely on quantum error correction to counteract decoherence. Successfully implementing an error correction protocol requires the fidelity of qubit operations to be well-above error correction thresholds. In superconducting quantum computers, measurement of the qubit state remains the lowest-fidelity operation. For the transmon, a prototypical superconducting qubit, measurement is carried out by scattering a microwave tone off the qubit. Conventionally, the frequency of this tone is of the same order as the transmon frequency. The measurement fidelity in this approach is limited by multi-excitation resonances in the transmon spectrum which are activated at high readout power. These resonances excite the qubit outside of the computational basis, violating the desired quantum non-demolition character of the measurement. Here, we find that strongly detuning the readout frequency from that of the transmon exponentially suppresses the strength of spurious multi-excitation resonances. By increasing the readout frequency up to twelve times the transmon frequency, we achieve a quantum non-demolition measurement fidelity of 99.93% with a residual probability of leakage to non-computational states of only 0.02%.
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Submitted 15 January, 2025;
originally announced January 2025.
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Kramers-protected hardware-efficient error correction with Andreev spin qubits
Authors:
Haoran Lu,
Isidora Araya Day,
Anton R. Akhmerov,
Bernard van Heck,
Valla Fatemi
Abstract:
We propose an architecture for bit-flip error correction of Andreev spins that is protected by Kramers' degeneracy. Specifically, we show that a coupling network of linear inductors and Andreev spin qubits results in a static Hamiltonian composed of the stabilizers of a bit-flip code. The electrodynamics of the many-body spin states also respect these stabilizers, and we show how reflectometry off…
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We propose an architecture for bit-flip error correction of Andreev spins that is protected by Kramers' degeneracy. Specifically, we show that a coupling network of linear inductors and Andreev spin qubits results in a static Hamiltonian composed of the stabilizers of a bit-flip code. The electrodynamics of the many-body spin states also respect these stabilizers, and we show how reflectometry off a single coupled resonator can thereby accomplish their projective measurement. We further show how circuit-mediated spin couplings enable error correction operations and a complete set of single- and two-module logical quantum gates. The concept, which we dub the Ising molecule qubit (or Isene), is experimentally feasible and provides a path for compact noise-biased qubits.
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Submitted 10 March, 2025; v1 submitted 20 December, 2024;
originally announced December 2024.
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Nonlinearity of transparent SNS weak links decreases sharply with length
Authors:
Valla Fatemi,
Pavel D. Kurilovich,
Anton R. Akhmerov,
Bernard van Heck
Abstract:
Superconductor-normal material-superconductor (SNS) junctions are being integrated into microwave circuits for fundamental and applied research goals. The short junction limit is a common simplifying assumption for experiments with SNS junctions, but this limit constrains how small the nonlinearity of the microwave circuit can be. Here, we show that a finite length of the weak link strongly suppre…
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Superconductor-normal material-superconductor (SNS) junctions are being integrated into microwave circuits for fundamental and applied research goals. The short junction limit is a common simplifying assumption for experiments with SNS junctions, but this limit constrains how small the nonlinearity of the microwave circuit can be. Here, we show that a finite length of the weak link strongly suppresses the nonlinearity compared to its zero-length limit -- the suppression can be up to a factor of ten even when the length remains shorter than the induced coherence length. We tie this behavior to the nonanalytic dependence of nonlinearity on length, which the critical current does not exhibit. Further, we identify additional experimentally observable consequences of nonzero length, and we conjecture that anharmonicity is bounded between zero and a maximally negative value for any non-interacting Josephson junction in the presence of time-reversal symmetry. We promote SNS junction length as a useful parameter for designing weakly nonlinear microwave circuits.
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Submitted 17 February, 2025; v1 submitted 2 October, 2024;
originally announced October 2024.
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Josephson tunnel junction arrays and Andreev weak links: linked by a single energy-phase relation
Authors:
A. Mert Bozkurt,
Valla Fatemi
Abstract:
Josephson elements are cornerstones of cryogenic classical and quantum superconducting technology, owing to their nonlinearity. Two important types of Josephson elements are often considered distinct: the tunnel junction (superconductor-insulator-superconductor, SIS) and the Andreev weak link (superconductor-normal-superconductor, SNS) referring to any non-superconducting and non-insulating centra…
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Josephson elements are cornerstones of cryogenic classical and quantum superconducting technology, owing to their nonlinearity. Two important types of Josephson elements are often considered distinct: the tunnel junction (superconductor-insulator-superconductor, SIS) and the Andreev weak link (superconductor-normal-superconductor, SNS) referring to any non-superconducting and non-insulating central region. SNS junctions and SIS junctions have appeared in related technological and fundamental science contexts over the last decade, such as in the design of protected qubit concepts. In this perspective article, we review correspondences between SISIS junctions and SNS junctions in limiting regimes, in which a single energy-phase relationship describes both systems. We show how this insight helps to connect recent bodies of theoretical and experimental work in both systems, and conclude by describing a few important differences.
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Submitted 5 September, 2024; v1 submitted 12 August, 2024;
originally announced August 2024.
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Impact of etches on thin-film single-crystal niobium resonators
Authors:
H. Wang,
T. Banerjee,
T. G. Farinha,
A. T. Hanbicki,
V. Fatemi,
B. S. Palmer,
C. J. K. Richardson
Abstract:
A single crystal niobium thin film was grown using molecular beam epitaxy on a c-plane sapphire wafer. Several samples were fabricated into dc resistivity test devices and coplanar waveguide resonator chips using the same microfabrication procedures and solvent cleans. The samples were then subject to different acid cleaning treatments using different combinations of piranha, hydrofluoric acid, an…
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A single crystal niobium thin film was grown using molecular beam epitaxy on a c-plane sapphire wafer. Several samples were fabricated into dc resistivity test devices and coplanar waveguide resonator chips using the same microfabrication procedures and solvent cleans. The samples were then subject to different acid cleaning treatments using different combinations of piranha, hydrofluoric acid, and buffered oxide etch solutions. The different samples expressed changes in dc resistivity in the normal and superconducting states such that the low temperature resistivities changed by more than 100\%, and the residual resistivity ratio dropped by a factor of 2. The internal quality factor of coplanar waveguide resonators measured near 5~GHz also showed significant variation at single photon powers ranging from 1.4$\times 10^6$ to less than 60$\times 10^3$. These changes correlate with the formation of surface crystallites that appear to be hydrocarbons. All observations are consistent with hydrogen diffusing into the niobium film at levels below the saturation threshold that is needed to observe niobium hydrides.
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Submitted 28 February, 2024;
originally announced February 2024.
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Molecular beam epitaxy growth of superconducting tantalum germanide
Authors:
Patrick J. Strohbeen,
Tathagata Banerjee,
Aurelia M. Brook,
Ido Levy,
Wendy L. Sarney,
Jechiel van Dijk,
Hayden Orth,
Melissa Mikalsen,
Valla Fatemi,
Javad Shabani
Abstract:
Developing new material platforms for use in superconductor-semiconductor hybrid structures is desirable due to limitations caused by intrinsic microwave losses present in commonly used III/V material systems. With the recent reports on tantalum superconducting qubits that show improvements over the Nb and Al counterparts, exploring Ta as an alternative superconductor in hybrid material systems is…
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Developing new material platforms for use in superconductor-semiconductor hybrid structures is desirable due to limitations caused by intrinsic microwave losses present in commonly used III/V material systems. With the recent reports on tantalum superconducting qubits that show improvements over the Nb and Al counterparts, exploring Ta as an alternative superconductor in hybrid material systems is promising. Here, we study the growth of Ta on semiconducting Ge (001) substrates grown via molecular beam epitaxy. We show that at a growth temperature of 400$^{\circ}$C the Ta diffuses into the Ge matrix in a self-limiting nature resulting in smooth and abrupt surfaces and interfaces with roughness on the order of 3-7 Å as measured by atomic force microscopy and x-ray reflectivity. The films are found to be a mixture of Ta$_{5}$Ge$_{3}$ and TaGe$_{2}$ binary alloys and form a native oxide that seems to form a sharp interface with the underlying film. These films are superconducting with a $T_{C}\sim 1.8-2$K and $H_{C}^{\perp} \sim 1.88T$, $H_{C}^{\parallel} \sim 5.1T$. These results show this tantalum germanide film to be promising for future superconducting quantum information platforms.
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Submitted 1 December, 2024; v1 submitted 2 December, 2023;
originally announced December 2023.
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Chiral adiabatic transmission protected by Fermi surface topology
Authors:
Isidora Araya Day,
Kostas Vilkelis,
Antonio L. R. Manesco,
A. Mert Bozkurt,
Valla Fatemi,
Anton R. Akhmerov
Abstract:
We demonstrate that Andreev modes that propagate along a transparent Josephson junction have a perfect transmission at the point where three junctions meet. The chirality and the number of quantized transmission channels is determined by the topology of the Fermi surface and the vorticity of the superconducting phase differences at the trijunction. We explain this chiral adiabatic transmission (CA…
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We demonstrate that Andreev modes that propagate along a transparent Josephson junction have a perfect transmission at the point where three junctions meet. The chirality and the number of quantized transmission channels is determined by the topology of the Fermi surface and the vorticity of the superconducting phase differences at the trijunction. We explain this chiral adiabatic transmission (CAT) as a consequence of the adiabatic evolution of the scattering modes both in momentum and real space. The dispersion relation of the junction then separates the scattering trajectories by introducing inaccessible regions of phase space. We expect that CAT is observable in nonlocal conductance and thermal transport measurements. Furthermore, because it does not rely on particle-hole symmetry, CAT is also possible to observe directly in metamaterials.
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Submitted 18 March, 2025; v1 submitted 28 November, 2023;
originally announced November 2023.
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Dissipationless Nonlinearity in Quantum Material Josephson Diodes
Authors:
Constantin Schrade,
Valla Fatemi
Abstract:
Dissipationless nonlinearities for three-wave mixing are a key component of many superconducting quantum devices, such as amplifiers and bosonic qubits. So far, such third-order nonlinearities have been primarily achieved with circuits of concatenated Josephson tunnel junctions. In this work, we theoretically develop an alternative approach to realize third-order nonlinearities from gate-tunable a…
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Dissipationless nonlinearities for three-wave mixing are a key component of many superconducting quantum devices, such as amplifiers and bosonic qubits. So far, such third-order nonlinearities have been primarily achieved with circuits of concatenated Josephson tunnel junctions. In this work, we theoretically develop an alternative approach to realize third-order nonlinearities from gate-tunable and intrinsically symmetry-broken quantum material Josephson junctions. We illustrate this approach on two examples, an Andreev interferometer and a magnetic Josephson junction. Our results show that both setups enable Kerr-free three-wave mixing for a broad range of frequencies, an attribute that is highly desirable for amplifier applications. Moreover, we also find that the magnetic junction constitutes a paradigmatic example for three-wave mixing in a minimal single-junction device without the need for any external biases. We hope that our work will guide the search of dissipationless nonlinearities in quantum material superconducting devices and inspire new ways of characterizing symmetry-breaking in quantum materials with microwave techniques.
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Submitted 18 October, 2023;
originally announced October 2023.
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Tunneling of fluxons via a Josephson resonant level
Authors:
T. Vakhtel,
P. D. Kurilovich,
M. Pita-Vidal,
A. Bargerbos,
V. Fatemi,
B. van Heck
Abstract:
Fluxons in a superconducting loop can be coherently coupled by quantum phase slips occurring at a weak link such as a Josephson junction. If Cooper pair tunneling at the junction occurs through a resonant level, $2π$ quantum phase slips are suppressed, and fluxons are predominantly coupled by $4π$ quantum phase slips. We analyze this scenario by computing the coupling between fluxons as the level…
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Fluxons in a superconducting loop can be coherently coupled by quantum phase slips occurring at a weak link such as a Josephson junction. If Cooper pair tunneling at the junction occurs through a resonant level, $2π$ quantum phase slips are suppressed, and fluxons are predominantly coupled by $4π$ quantum phase slips. We analyze this scenario by computing the coupling between fluxons as the level is brought into resonance with the superconducting condensate. The results indicate that the $4π$-dominated regime can be observed directly in the transition spectrum for circuit parameters typical of a fluxonium qubit. We also show that, if the inductive energy of the loop is much smaller than the plasma frequency of the junction, the low-energy Hamiltonian of the circuit is dual to that of a topological superconducting island. These findings can inform experiments on bifluxon qubits as well as the design of novel types of protected qubits.
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Submitted 12 August, 2024; v1 submitted 4 October, 2023;
originally announced October 2023.
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Double-Fourier engineering of Josephson energy-phase relationships applied to diodes
Authors:
A. Mert Bozkurt,
Jasper Brookman,
Valla Fatemi,
Anton R. Akhmerov
Abstract:
We present a systematic method to design arbitrary energy-phase relations using parallel arms of two series Josephson tunnel junctions each. Our approach employs Fourier engineering in the energy-phase relation of each arm and the position of the arms in real space. We demonstrate our method by engineering the energy-phase relation of a near-ideal superconducting diode, which we find to be robust…
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We present a systematic method to design arbitrary energy-phase relations using parallel arms of two series Josephson tunnel junctions each. Our approach employs Fourier engineering in the energy-phase relation of each arm and the position of the arms in real space. We demonstrate our method by engineering the energy-phase relation of a near-ideal superconducting diode, which we find to be robust against the imperfections in the design parameters. Finally, we show the versatility of our approach by designing various other energy-phase relations.
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Submitted 16 November, 2023; v1 submitted 10 July, 2023;
originally announced July 2023.
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Coexistence of nonequilibrium density and equilibrium energy distribution of quasiparticles in a superconducting qubit
Authors:
Thomas Connolly,
Pavel D. Kurilovich,
Spencer Diamond,
Heekun Nho,
Charlotte G. L. Bøttcher,
Leonid I. Glazman,
Valla Fatemi,
Michel H. Devoret
Abstract:
The density of quasiparticles typically observed in superconducting qubits exceeds the value expected in equilibrium by many orders of magnitude. Can this out-of-equilibrium quasiparticle density still possess an energy distribution in equilibrium with the phonon bath? Here, we answer this question affirmatively by measuring the thermal activation of charge-parity switching in a transmon qubit wit…
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The density of quasiparticles typically observed in superconducting qubits exceeds the value expected in equilibrium by many orders of magnitude. Can this out-of-equilibrium quasiparticle density still possess an energy distribution in equilibrium with the phonon bath? Here, we answer this question affirmatively by measuring the thermal activation of charge-parity switching in a transmon qubit with a difference in superconducting gap on the two sides of the Josephson junction. We then demonstrate how the gap asymmetry of the device can be exploited to manipulate its parity.
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Submitted 11 March, 2024; v1 submitted 23 February, 2023;
originally announced February 2023.
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Distinguishing parity-switching mechanisms in a superconducting qubit
Authors:
Spencer Diamond,
Valla Fatemi,
Max Hays,
Heekun Nho,
Pavel D. Kurilovich,
Thomas Connolly,
Vidul R. Joshi,
Kyle Serniak,
Luigi Frunzio,
Leonid I. Glazman,
Michel H. Devoret
Abstract:
Single-charge tunneling is a decoherence mechanism affecting superconducting qubits, yet the origin of excess quasiparticle excitations (QPs) responsible for this tunneling in superconducting devices is not fully understood. We measure the flux dependence of charge-parity (or simply, ``parity'') switching in an offset-charge-sensitive transmon qubit to identify the contributions of photon-assisted…
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Single-charge tunneling is a decoherence mechanism affecting superconducting qubits, yet the origin of excess quasiparticle excitations (QPs) responsible for this tunneling in superconducting devices is not fully understood. We measure the flux dependence of charge-parity (or simply, ``parity'') switching in an offset-charge-sensitive transmon qubit to identify the contributions of photon-assisted parity switching and QP generation to the overall parity-switching rate. The parity-switching rate exhibits a qubit-state-dependent peak in the flux dependence, indicating a cold distribution of excess QPs which are predominantly trapped in the low-gap film of the device. Moreover, we find that the photon-assisted process contributes significantly to both parity switching and the generation of excess QPs by fitting to a model that self-consistently incorporates photon-assisted parity switching as well as inter-film QP dynamics.
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Submitted 15 April, 2022;
originally announced April 2022.
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Microwave susceptibility observation of interacting many-body Andreev states
Authors:
V. Fatemi,
P. D. Kurilovich,
M. Hays,
D. Bouman,
T. Connolly,
S. Diamond,
N. E. Frattini,
V. D. Kurilovich,
P. Krogstrup,
J. Nygard,
A. Geresdi,
L. I. Glazman,
M. H. Devoret
Abstract:
Electrostatic charging affects the many-body spectrum of Andreev states, yet its influence on their microwave properties has not been elucidated. We developed a circuit quantum electrodynamics probe that, in addition to transition spectroscopy, measures the microwave susceptibility of different states of a semiconductor nanowire weak link with a single dominant (spin-degenerate) Andreev level. We…
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Electrostatic charging affects the many-body spectrum of Andreev states, yet its influence on their microwave properties has not been elucidated. We developed a circuit quantum electrodynamics probe that, in addition to transition spectroscopy, measures the microwave susceptibility of different states of a semiconductor nanowire weak link with a single dominant (spin-degenerate) Andreev level. We found that the microwave susceptibility does not exhibit a particle-hole symmetry, which we qualitatively explain as an influence of Coulomb interaction. Moreover, our state-selective measurement reveals a large, $π$-phase shifted contribution to the response common to all many-body states which can be interpreted as arising from a phase-dependent continuum in the superconducting density of states.
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Submitted 10 December, 2021;
originally announced December 2021.
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Microwave response of an Andreev bound state
Authors:
Pavel D. Kurilovich,
Vladislav D. Kurilovich,
Valla Fatemi,
Michel H. Devoret,
Leonid I. Glazman
Abstract:
We develop a theory for the dynamics of an Andreev bound state hosted by a weak link of finite length for which charging effects are important. We derive the linear response of both the current through the link and charge accumulated in it with respect to the phase and gate voltage biases. The resulting matrix encapsulates the spectroscopic properties of a weak link embedded in a microwave resonat…
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We develop a theory for the dynamics of an Andreev bound state hosted by a weak link of finite length for which charging effects are important. We derive the linear response of both the current through the link and charge accumulated in it with respect to the phase and gate voltage biases. The resulting matrix encapsulates the spectroscopic properties of a weak link embedded in a microwave resonator. In the low-frequency limit, we obtain the response functions analytically using an effective low-energy Hamiltonian, which we derive. This Hamiltonian minimally accounts for Coulomb interaction and is suitable for a phenomenological description of a weak link having a finite length.
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Submitted 4 July, 2021; v1 submitted 31 May, 2021;
originally announced June 2021.
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Multiplet supercurrent in Josephson tunneling circuits
Authors:
André Melo,
Valla Fatemi,
Anton R. Akhmerov
Abstract:
The multi-terminal Josephson effect allows DC supercurrent to flow at finite commensurate voltages. Existing proposals to realize this effect rely on nonlocal Andreev processes in superconductor-normal-superconductor junctions. However, this approach requires precise control over microscopic states and is obscured by dissipative current. We show that standard tunnel Josephson circuits also support…
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The multi-terminal Josephson effect allows DC supercurrent to flow at finite commensurate voltages. Existing proposals to realize this effect rely on nonlocal Andreev processes in superconductor-normal-superconductor junctions. However, this approach requires precise control over microscopic states and is obscured by dissipative current. We show that standard tunnel Josephson circuits also support multiplet supercurrent mediated only by local tunneling processes. Furtheremore, we observe that the supercurrents persist even in the high charging energy regime in which only sequential Cooper transfers are allowed. Finally, we demonstrate that the multiplet supercurrent in these circuits has a quantum geometric component that is distinguinshable from the well-known adiabatic contribution.
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Submitted 6 October, 2021; v1 submitted 22 April, 2021;
originally announced April 2021.
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Coherent manipulation of an Andreev spin qubit
Authors:
M. Hays,
V. Fatemi,
D. Bouman,
J. Cerrillo,
S. Diamond,
K. Serniak,
T. Connolly,
P. Krogstrup,
J. Nygård,
A. Levy Yeyati,
A. Geresdi,
M. H. Devoret
Abstract:
Two promising architectures for solid-state quantum information processing are electron spins in semiconductor quantum dots and the collective electromagnetic modes of superconducting circuits. In some aspects, these two platforms are dual to one another: superconducting qubits are more easily coupled but are relatively large among quantum devices $(\sim\mathrm{mm})$, while electrostatically-confi…
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Two promising architectures for solid-state quantum information processing are electron spins in semiconductor quantum dots and the collective electromagnetic modes of superconducting circuits. In some aspects, these two platforms are dual to one another: superconducting qubits are more easily coupled but are relatively large among quantum devices $(\sim\mathrm{mm})$, while electrostatically-confined electron spins are spatially compact ($\sim \mathrm{μm}$) but more complex to link. Here we combine beneficial aspects of both platforms in the Andreev spin qubit: the spin degree of freedom of an electronic quasiparticle trapped in the supercurrent-carrying Andreev levels of a Josephson semiconductor nanowire. We demonstrate coherent spin manipulation by combining single-shot circuit-QED readout and spin-flipping Raman transitions, finding a spin-flip time $T_S = 17~\mathrm{μs}$ and a spin coherence time $T_{2E}=52~\mathrm{ns}$. These results herald a new spin qubit with supercurrent-based circuit-QED integration and further our understanding and control of Andreev levels -- the parent states of Majorana zero modes -- in semiconductor-superconductor heterostructures.
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Submitted 17 January, 2021;
originally announced January 2021.
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Spin Coherent Manipulation in Josephson Weak Links
Authors:
Javier Cerrillo,
Max Hays,
Valla Fatemi,
Alfredo Levy Yeyati
Abstract:
Novel designs of Josephson weak links based on semiconducting nanowires combined with circuit QED techniques have enabled the resolution of their fine structure due to spin-orbit interactions, opening a path towards Andreev spin qubits. Nevertheless, direct manipulation of the spin within a given Andreev state is in general suppressed compared to inter-doublet manipulation in the absence of Zeeman…
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Novel designs of Josephson weak links based on semiconducting nanowires combined with circuit QED techniques have enabled the resolution of their fine structure due to spin-orbit interactions, opening a path towards Andreev spin qubits. Nevertheless, direct manipulation of the spin within a given Andreev state is in general suppressed compared to inter-doublet manipulation in the absence of Zeeman effects. In addition, noisy spin-flip mechanisms limit any coherent manipulation protocol to spin post-selection. We propose a combination of a spin polarization protocol analogous to sideband cooling with stimulated Raman adiabatic passage specifically tailored for these systems. We show this approach is robust for a large range of design parameters, including the currently rather stringent coherence times.
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Submitted 13 December, 2020;
originally announced December 2020.
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Weyl Josephson Circuits
Authors:
Valla Fatemi,
Anton R. Akhmerov,
Landry Bretheau
Abstract:
We introduce Weyl Josephson circuits: small Josephson junction circuits that simulate Weyl band structures. We first formulate a general approach to design circuits that are analogous to Bloch Hamiltonians of a desired dimensionality and symmetry class. We then construct and analyze a six-junction device that produces a 3D Weyl Hamiltonian with broken inversion symmetry and in which topological ph…
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We introduce Weyl Josephson circuits: small Josephson junction circuits that simulate Weyl band structures. We first formulate a general approach to design circuits that are analogous to Bloch Hamiltonians of a desired dimensionality and symmetry class. We then construct and analyze a six-junction device that produces a 3D Weyl Hamiltonian with broken inversion symmetry and in which topological phase transitions can be triggered \emph{in situ}. We argue that currently available superconducting circuit technology allows experiments that probe topological properties inaccessible in condensed matter systems.
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Submitted 31 August, 2020;
originally announced August 2020.
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Continuous monitoring of a trapped, superconducting spin
Authors:
M. Hays,
V. Fatemi,
K. Serniak,
D. Bouman,
S. Diamond,
G. de Lange,
P. Krogstrup,
J. Nygård,
A. Geresdi,
M. H. Devoret
Abstract:
Readout and control of fermionic spins in solid-state systems are key primitives of quantum information processing and microscopic magnetic sensing. The highly localized nature of most fermionic spins decouples them from parasitic degrees of freedom, but makes long-range interoperability difficult to achieve. In light of this challenge, an active effort is underway to integrate fermionic spins wit…
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Readout and control of fermionic spins in solid-state systems are key primitives of quantum information processing and microscopic magnetic sensing. The highly localized nature of most fermionic spins decouples them from parasitic degrees of freedom, but makes long-range interoperability difficult to achieve. In light of this challenge, an active effort is underway to integrate fermionic spins with circuit quantum electrodynamics (cQED), which was originally developed in the field of superconducting qubits to achieve single-shot, quantum-non-demolition (QND) measurements and long-range couplings. However, single-shot readout of an individual spin with cQED has remained elusive due to the difficulty of coupling a resonator to a particle trapped by a charge-confining potential. Here we demonstrate the first single-shot, cQED readout of a single spin. In our novel implementation, the spin is that of an individual superconducting quasiparticle trapped in the Andreev levels of a semiconductor nanowire Josephson element. Due to a spin-orbit interaction inside the nanowire, this "superconducting spin" directly determines the flow of supercurrent through the element. We harnessed this spin-dependent supercurrent to achieve both a zero-field spin splitting as well as a long-range interaction between the quasiparticle and a superconducting microwave resonator. Owing to the strength of this interaction in our device, measuring the resultant spin-dependent resonator frequency yielded QND spin readout with 92% fidelity in 1.9 $μ$s and allowed us to monitor the quasiparticle's spin in real time. These results pave the way for new "fermionic cQED" devices: superconducting spin qubits operating at zero magnetic field, devices in which the spin has enhanced governance over the circuit, and time-domain measurements of Majorana modes.
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Submitted 7 August, 2019;
originally announced August 2019.
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Deep-Learning-Enabled Fast Optical Identification and Characterization of Two-Dimensional Materials
Authors:
Bingnan Han,
Yuxuan Lin,
Yafang Yang,
Nannan Mao,
Wenyue Li,
Haozhe Wang,
Kenji Yasuda,
Xirui Wang,
Valla Fatemi,
Lin Zhou,
Joel I-Jan Wang,
Qiong Ma,
Yuan Cao,
Daniel Rodan-Legrain,
Ya-Qing Bie,
Efrén Navarro-Moratalla,
Dahlia Klein,
David MacNeill,
Sanfeng Wu,
Hikari Kitadai,
Xi Ling,
Pablo Jarillo-Herrero,
Jing Kong,
Jihao Yin,
Tomás Palacios
Abstract:
Advanced microscopy and/or spectroscopy tools play indispensable role in nanoscience and nanotechnology research, as it provides rich information about the growth mechanism, chemical compositions, crystallography, and other important physical and chemical properties. However, the interpretation of imaging data heavily relies on the "intuition" of experienced researchers. As a result, many of the d…
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Advanced microscopy and/or spectroscopy tools play indispensable role in nanoscience and nanotechnology research, as it provides rich information about the growth mechanism, chemical compositions, crystallography, and other important physical and chemical properties. However, the interpretation of imaging data heavily relies on the "intuition" of experienced researchers. As a result, many of the deep graphical features obtained through these tools are often unused because of difficulties in processing the data and finding the correlations. Such challenges can be well addressed by deep learning. In this work, we use the optical characterization of two-dimensional (2D) materials as a case study, and demonstrate a neural-network-based algorithm for the material and thickness identification of exfoliated 2D materials with high prediction accuracy and real-time processing capability. Further analysis shows that the trained network can extract deep graphical features such as contrast, color, edges, shapes, segment sizes and their distributions, based on which we develop an ensemble approach topredict the most relevant physical properties of 2D materials. Finally, a transfer learning technique is applied to adapt the pretrained network to other applications such as identifying layer numbers of a new 2D material, or materials produced by a different synthetic approach. Our artificial-intelligence-based material characterization approach is a powerful tool that would speed up the preparation, initial characterization of 2D materials and other nanomaterials and potentially accelerate new material discoveries.
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Submitted 27 January, 2020; v1 submitted 26 June, 2019;
originally announced June 2019.
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Direct Dispersive Monitoring of Charge Parity in Offset-Charge-Sensitive Transmons
Authors:
K. Serniak,
S. Diamond,
M. Hays,
V. Fatemi,
S. Shankar,
L. Frunzio,
R. J. Schoelkopf,
M. H. Devoret
Abstract:
A striking characteristic of superconducting circuits is that their eigenspectra and intermode coupling strengths are well predicted by simple Hamiltonians representing combinations of quantum circuit elements. Of particular interest is the Cooper-pair-box Hamiltonian used to describe the eigenspectra of transmon qubits, which can depend strongly on the offset-charge difference across the Josephso…
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A striking characteristic of superconducting circuits is that their eigenspectra and intermode coupling strengths are well predicted by simple Hamiltonians representing combinations of quantum circuit elements. Of particular interest is the Cooper-pair-box Hamiltonian used to describe the eigenspectra of transmon qubits, which can depend strongly on the offset-charge difference across the Josephson element. Notably, this offset-charge dependence can also be observed in the dispersive coupling between an ancillary readout mode and a transmon fabricated in the offset-charge-sensitive (OCS) regime. We utilize this effect to achieve direct, high-fidelity dispersive readout of the joint plasmon and charge-parity state of an OCS transmon, which enables efficient detection of charge fluctuations and nonequilibrium-quasiparticle dynamics. Specifically, we show that additional high-frequency filtering can extend the charge-parity lifetime of our device by two orders of magnitude, resulting in a significantly improved energy relaxation time $T_1\sim200~μ\mathrm{s}$.
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Submitted 30 July, 2019; v1 submitted 28 February, 2019;
originally announced March 2019.
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Observation of the nonlinear Hall effect under time reversal symmetric conditions
Authors:
Qiong Ma,
Su-Yang Xu,
Huitao Shen,
David Macneill,
Valla Fatemi,
Andres M. Mier Valdivia,
Sanfeng Wu,
Tay-Rong Chang,
Zongzheng Du,
Chuang-Han Hsu,
Quinn D. Gibson,
Shiang Fang,
Efthimios Kaxiras,
Kenji Watanabe,
Takashi Taniguchi,
Robert J. Cava,
Hai-Zhou Lu,
Hsin Lin,
Liang Fu,
Nuh Gedik,
Pablo Jarillo-Herrero
Abstract:
The electrical Hall effect is the production of a transverse voltage under an out-of-plane magnetic field. Historically, studies of the Hall effect have led to major breakthroughs including the discoveries of Berry curvature and the topological Chern invariants. In magnets, the internal magnetization allows Hall conductivity in the absence of external magnetic field. This anomalous Hall effect (AH…
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The electrical Hall effect is the production of a transverse voltage under an out-of-plane magnetic field. Historically, studies of the Hall effect have led to major breakthroughs including the discoveries of Berry curvature and the topological Chern invariants. In magnets, the internal magnetization allows Hall conductivity in the absence of external magnetic field. This anomalous Hall effect (AHE) has become an important tool to study quantum magnets. In nonmagnetic materials without external magnetic fields, the electrical Hall effect is rarely explored because of the constraint by time-reversal symmetry. However, strictly speaking, only the Hall effect in the linear response regime, i.e., the Hall voltage linearly proportional to the external electric field, identically vanishes due to time-reversal symmetry. The Hall effect in the nonlinear response regime, on the other hand, may not be subject to such symmetry constraints. Here, we report the observation of the nonlinear Hall effect (NLHE) in the electrical transport of the nonmagnetic 2D quantum material, bilayer WTe2. Specifically, flowing an electrical current in bilayer WTe2 leads to a nonlinear Hall voltage in the absence of magnetic field. The NLHE exhibits unusual properties sharply distinct from the AHE in metals: The NLHE shows a quadratic I-V characteristic; It strongly dominates the nonlinear longitudinal response, leading to a Hall angle of about 90 degree. We further show that the NLHE directly measures the "dipole moment" of the Berry curvature, which arises from layer-polarized Dirac fermions in bilayer WTe2. Our results demonstrate a new Hall effect and provide a powerful methodology to detect Berry curvature in a wide range of nonmagnetic quantum materials in an energy-resolved way.
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Submitted 24 September, 2018;
originally announced September 2018.
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Electrically Tunable Low Density Superconductivity in a Monolayer Topological Insulator
Authors:
Valla Fatemi,
Sanfeng Wu,
Yuan Cao,
Landry Bretheau,
Quinn D. Gibson,
Kenji Watanabe,
Takashi Taniguchi,
Robert J. Cava,
Pablo Jarillo-Herrero
Abstract:
The capability to switch electrically between superconducting and insulating states of matter represents a novel paradigm in the state-of-the-art engineering of correlated electronic systems. An exciting possibility is to turn on superconductivity in a topologically non-trivial insulator, which provides a route to search for non-Abelian topological states. However, existing demonstrations of super…
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The capability to switch electrically between superconducting and insulating states of matter represents a novel paradigm in the state-of-the-art engineering of correlated electronic systems. An exciting possibility is to turn on superconductivity in a topologically non-trivial insulator, which provides a route to search for non-Abelian topological states. However, existing demonstrations of superconductor-insulator switches have involved only topologically trivial systems, and even those are rare due to the stringent requirement to tune the carrier density over a wide range. Here we report reversible, in-situ electrostatic on off switching of superconductivity in a recently established quantum spin Hall insulator, namely monolayer tungsten ditelluride (WTe2). Fabricated into a van der Waals field effect transistor, the monolayer's ground state can be continuously gate-tuned from the topological insulating to the superconducting state, with critical temperatures Tc up to ~ 1 Kelvin. The critical density for the onset of superconductivity is estimated to be ~ 5 x 10^12 cm^-2, among the lowest for two-dimensional (2D) superconductors. Our results establish monolayer WTe2 as a material platform for engineering novel superconducting nanodevices and topological phases of matter.
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Submitted 12 September, 2018;
originally announced September 2018.
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Electrically switchable Berry curvature dipole in the monolayer topological insulator WTe2
Authors:
Su-Yang Xu,
Qiong Ma,
Huitao Shen,
Valla Fatemi,
Sanfeng Wu,
Tay-Rong Chang,
Guoqing Chang,
Andres M. Mier Valdivia,
Ching-Kit Chan,
Quinn D. Gibson,
Jiadong Zhou,
Zheng Liu,
Kenji Watanabe,
Takashi Taniguchi,
Hsin Lin,
Robert J. Cava,
Liang Fu,
Nuh Gedik,
Pablo Jarillo-Herrero
Abstract:
Recent experimental evidence for the quantum spin Hall (QSH) state in monolayer WTe$_2$ has bridged two of the most active fields of condensed matter physics, 2D materials and topological physics. This 2D topological crystal also displays unconventional spin-torque and gate-tunable superconductivity. While the realization of QSH has demonstrated the nontrivial topology of the electron wavefunction…
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Recent experimental evidence for the quantum spin Hall (QSH) state in monolayer WTe$_2$ has bridged two of the most active fields of condensed matter physics, 2D materials and topological physics. This 2D topological crystal also displays unconventional spin-torque and gate-tunable superconductivity. While the realization of QSH has demonstrated the nontrivial topology of the electron wavefunctions of monolayer WTe$_2$, the geometrical properties of the wavefunction, such as the Berry curvature, remain unstudied. On the other hand, it has been increasingly recognized that the Berry curvature plays an important role in multiple areas of condensed matter physics including nonreciprocal electron transport, enantioselective optical responses, chiral polaritons and even unconventional superconductivity. Here we utilize mid-infrared optoelectronic microscopy to investigate the Berry curvature in monolayer WTe$_2$. By optically exciting electrons across the inverted QSH gap, we observe an in-plane circular photogalvanic current even under normal incidence. The application of an out-of-plane displacement field further systematically controls the direction and magnitude of the photocurrent. Our observed photocurrent reveals a novel Berry curvature dipole that arises from the nontrivial wavefunctions near the inverted gap edge. These previously unrealized Berry curvature dipole and strong electric field effect are uniquely enabled by the inverted band structure and tilted crystal lattice of monolayer WTe$_2$. Such an electrically switchable Berry curvature dipole opens the door to the observation of a wide range of quantum geometrical phenomena, such as quantum nonlinear Hall, orbital-Edelstein and chiral polaritonic effects.
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Submitted 3 July, 2018;
originally announced July 2018.
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Synthesizing Coulombic superconductivity in van der Waals bilayers
Authors:
Valla Fatemi,
Jonathan Ruhman
Abstract:
Synthesizing a polarizable environment surrounding a low-dimensional metal to generate superconductivity is a simple theoretical idea that still awaits a convincing experimental realization. The challenging requirements are satisfied in a metallic bilayer when the ratio between the Fermi velocities is small and both metals have a similar, low carrier density. In this case, the slower electron gas…
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Synthesizing a polarizable environment surrounding a low-dimensional metal to generate superconductivity is a simple theoretical idea that still awaits a convincing experimental realization. The challenging requirements are satisfied in a metallic bilayer when the ratio between the Fermi velocities is small and both metals have a similar, low carrier density. In this case, the slower electron gas acts as a retarded polarizable medium (a "dielectric" environment) for the faster metal. Here we show that this concept is naturally optimized for the case of an atomically thin bilayer consisting of a Dirac semimetal (e.g. graphene) placed in atomic-scale proximity to a doped semiconducting transition metal dichalcogenide (e.g. WSe$_2$). The superconducting transition temperature that arises from the dynamically screened Coulomb repulsion is computed using the linearized Eliashberg equation. In the case of graphene on WSe$_2$, we find that $T_c$ can exceed 100 mK, and it increases further when the Dirac valley degeneracy is reduced. Thus, we argue that suspended van der Waals bilayers are in a unique position to realize experimentally this long anticipated theoretical concept.
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Submitted 11 April, 2018;
originally announced April 2018.
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Magic-angle graphene superlattices: a new platform for unconventional superconductivity
Authors:
Yuan Cao,
Valla Fatemi,
Shiang Fang,
Kenji Watanabe,
Takashi Taniguchi,
Efthimios Kaxiras,
Pablo Jarillo-Herrero
Abstract:
The understanding of strongly-correlated materials, and in particular unconventional superconductors, has puzzled physicists for decades. Such difficulties have stimulated new research paradigms, such as ultra-cold atom lattices for simulating quantum materials. Here we report on the realization of intrinsic unconventional superconductivity in a 2D superlattice created by stacking two graphene she…
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The understanding of strongly-correlated materials, and in particular unconventional superconductors, has puzzled physicists for decades. Such difficulties have stimulated new research paradigms, such as ultra-cold atom lattices for simulating quantum materials. Here we report on the realization of intrinsic unconventional superconductivity in a 2D superlattice created by stacking two graphene sheets with a small twist angle. For angles near $1.1^\circ$, the first `magic' angle, twisted bilayer graphene (TBG) exhibits ultra-flat bands near charge neutrality, which lead to correlated insulating states at half-filling. Upon electrostatic doping away from these correlated insulating states, we observe tunable zero-resistance states with a critical temperature $T_c$ up to 1.7 K. The temperature-density phase diagram shows similarities with that of the cuprates, including superconducting domes. Moreover, quantum oscillations indicate small Fermi surfaces near the correlated insulating phase, in analogy with under-doped cuprates. The relative high $T_c$, given such small Fermi surface (corresponding to a record-low 2D carrier density of $10^{11} \textrm{cm}^{-2}$ , renders TBG among the strongest coupling superconductors, in a regime close to the BCS-BEC crossover. These novel results establish TBG as the first purely carbon-based 2D superconductor and as a highly tunable platform to investigate strongly-correlated phenomena, which could lead to insights into the physics of high-$T_c$ superconductors and quantum spin liquids.
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Submitted 20 May, 2018; v1 submitted 6 March, 2018;
originally announced March 2018.
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Correlated Insulator Behaviour at Half-Filling in Magic Angle Graphene Superlattices
Authors:
Yuan Cao,
Valla Fatemi,
Ahmet Demir,
Shiang Fang,
Spencer L. Tomarken,
Jason Y. Luo,
J. D. Sanchez-Yamagishi,
K. Watanabe,
T. Taniguchi,
E. Kaxiras,
R. C. Ashoori,
P. Jarillo-Herrero
Abstract:
Van der Waals (vdW) heterostructures are an emergent class of metamaterials comprised of vertically stacked two-dimensional (2D) building blocks, which provide us with a vast tool set to engineer their properties on top of the already rich tunability of 2D materials. One of the knobs, the twist angle between different layers, plays a crucial role in the ultimate electronic properties of a vdW hete…
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Van der Waals (vdW) heterostructures are an emergent class of metamaterials comprised of vertically stacked two-dimensional (2D) building blocks, which provide us with a vast tool set to engineer their properties on top of the already rich tunability of 2D materials. One of the knobs, the twist angle between different layers, plays a crucial role in the ultimate electronic properties of a vdW heterostructure and does not have a direct analog in other systems such as MBE-grown semiconductor heterostructures. For small twist angles, the moiré pattern produced by the lattice misorientation creates a long-range modulation. So far, the study of the effect of twist angles in vdW heterostructures has been mostly concentrated in graphene/hexagonal boron nitride (h-BN) twisted structures, which exhibit relatively weak interlayer interaction due to the presence of a large bandgap in h-BN. Here we show that when two graphene sheets are twisted by an angle close to the theoretically predicted 'magic angle', the resulting flat band structure near charge neutrality gives rise to a strongly-correlated electronic system. These flat bands exhibit half-filling insulating phases at zero magnetic field, which we show to be a Mott-like insulator arising from electrons localized in the moiré superlattice. These unique properties of magic-angle twisted bilayer graphene (TwBLG) open up a new playground for exotic many-body quantum phases in a 2D platform made of pure carbon and without magnetic field. The easy accessibility of the flat bands, the electrical tunability, and the bandwidth tunability though twist angle may pave the way towards more exotic correlated systems, such as unconventional superconductors or quantum spin liquids.
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Submitted 1 February, 2018;
originally announced February 2018.
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Observation of the Quantum Spin Hall Effect up to 100 Kelvin in a Monolayer Crystal
Authors:
Sanfeng Wu,
Valla Fatemi,
Quinn D. Gibson,
Kenji Watanabe,
Takashi Taniguchi,
Robert J. Cava,
Pablo Jarillo-Herrero
Abstract:
The field of topological insulators (TI) was sparked by the prediction of the quantum spin Hall effect (QSHE) in time reversal invariant systems, such as spin-orbit coupled monolayer graphene. Ever since, a variety of monolayer crystals have been proposed as two-dimensional (2D) TIs exhibiting the QSHE, possibly even at high temperatures. However, conclusive evidence for a monolayer QSHE is still…
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The field of topological insulators (TI) was sparked by the prediction of the quantum spin Hall effect (QSHE) in time reversal invariant systems, such as spin-orbit coupled monolayer graphene. Ever since, a variety of monolayer crystals have been proposed as two-dimensional (2D) TIs exhibiting the QSHE, possibly even at high temperatures. However, conclusive evidence for a monolayer QSHE is still lacking, and systems based on semiconductor heterostructures operate at temperatures close to liquid helium. Here we report the observation of the QSHE in monolayer WTe2 at temperatures up to 100 Kelvin. The monolayer exhibits the hallmark quantized transport conductance, ~ e2/h per edge, in the short edge limit. Moreover, a magnetic field suppresses the conductance, and the observed Zeeman-type gap indicates the existence of a Kramers degenerate point, demonstrating the importance of time reversal symmetry for protection from elastic backscattering. Our results establish the high-temperature QSHE and open a new realm for the discovery of topological phases based on 2D crystals.
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Submitted 9 November, 2017;
originally announced November 2017.
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Enhanced Superconductivity and Suppression of Charge-density Wave Order in 2H-TaS$_2$ in the Two-dimensional Limit
Authors:
Yafang Yang,
Shiang Fang,
Valla Fatemi,
Jonathan Ruhman,
Efrén Navarro-Moratalla,
Kenji Watanabe,
Takashi Taniguchi,
Efthimios Kaxiras,
Pablo Jarillo-Herrero
Abstract:
As superconductors are thinned down to the 2D limit, their critical temperature $T_c$ typically decreases. Here we report the opposite behavior, a substantial enhancement of $T_c$ with decreasing thickness, in 2D crystalline superconductor 2H-TaS$_2$. Remarkably, in the monolayer limit, $T_c$ increases to 3.4 K compared to 0.8 K in the bulk. Accompanying this trend in superconductivity, we observe…
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As superconductors are thinned down to the 2D limit, their critical temperature $T_c$ typically decreases. Here we report the opposite behavior, a substantial enhancement of $T_c$ with decreasing thickness, in 2D crystalline superconductor 2H-TaS$_2$. Remarkably, in the monolayer limit, $T_c$ increases to 3.4 K compared to 0.8 K in the bulk. Accompanying this trend in superconductivity, we observe suppression of the charge-density wave (CDW) transition with decreasing thickness. To explain these trends, we perform electronic structure calculations showing that a reduction of the CDW amplitude results in a substantial increase of the density of states at the Fermi energy, which contributes to the enhancement of $T_c$. Our results establish ultra-thin 2H-TaS$_2$ as an ideal platform to study the competition between CDW order and superconductivity.
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Submitted 27 February, 2018; v1 submitted 31 October, 2017;
originally announced November 2017.
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Magnetoresistance and Quantum Oscillations of an Electrostatically Tuned Semimetal-to-Metal Transition in Ultra-Thin WTe2
Authors:
Valla Fatemi,
Quinn D. Gibson,
Kenji Watanabe,
Takashi Taniguchi,
Robert J. Cava,
Pablo Jarillo-Herrero
Abstract:
We report on electronic transport measurements of electrostatically gated nano-devices of the semimetal WTe\textsubscript{2}. High mobility metallic behavior is achieved in the 2D limit by encapsulating thin flakes in an inert atmosphere. At low temperatures, we find that a large magnetoresistance can be turned on and off by electrostatically doping the system between a semimetallic state and an e…
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We report on electronic transport measurements of electrostatically gated nano-devices of the semimetal WTe\textsubscript{2}. High mobility metallic behavior is achieved in the 2D limit by encapsulating thin flakes in an inert atmosphere. At low temperatures, we find that a large magnetoresistance can be turned on and off by electrostatically doping the system between a semimetallic state and an electron-only metallic state, respectively. We confirm the nature of the two regimes by analyzing the magnetoresistance and Hall effect with a two-carrier model, as well as by analysis of Shubnikov-de Haas oscillations, both of which indicate depletion of hole carriers via the electrostatic gate. This confirms that semiclassical transport of two oppositely charged carriers accurately describes the exceptional magnetoresistance observed in this material. Finally, we also find that the magnetoresistance power law is sub-quadratic and density-independent, suggesting new physics specifically in the semimetallic regime.
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Submitted 30 January, 2017;
originally announced January 2017.
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Superlattice-induced insulating states and valley-protected orbits in twisted bilayer graphene
Authors:
Y. Cao,
J. Y. Luo,
V. Fatemi,
S. Fang,
J. D. Sanchez-Yamagishi,
K. Watanabe,
T. Taniguchi,
E. Kaxiras,
P. Jarillo-Herrero
Abstract:
Twisted bilayer graphene (TwBLG) is one of the simplest van der Waals heterostructures, yet it yields a complex electronic system with intricate interplay between moiré physics and interlayer hybridization effects. We report on electronic transport measurements of high mobility small angle TwBLG devices showing clear evidence for insulating states at the superlattice band edges, with thermal activ…
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Twisted bilayer graphene (TwBLG) is one of the simplest van der Waals heterostructures, yet it yields a complex electronic system with intricate interplay between moiré physics and interlayer hybridization effects. We report on electronic transport measurements of high mobility small angle TwBLG devices showing clear evidence for insulating states at the superlattice band edges, with thermal activation gaps several times larger than theoretically predicted. Moreover, Shubnikov-de Haas oscillations and tight binding calculations reveal that the band structure consists of two intersecting Fermi contours whose crossing points are effectively unhybridized. We attribute this to exponentially suppressed interlayer hopping amplitudes for momentum transfers larger than the moiré wavevector.
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Submitted 18 July, 2016;
originally announced July 2016.
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Tunneling in graphene-topological insulator hybrid devices
Authors:
Hadar Steinberg,
Lucas A. Orona,
Valla Fatemi,
Javier D. Sanchez-Yamagishi,
Kenji Watanabe,
Takashi Taniguchi,
Pablo Jarillo-Herrero
Abstract:
Hybrid graphene-topological insulator (TI) devices were fabricated using a mechanical transfer method and studied via electronic transport. Devices consisting of bilayer graphene (BLG) under the TI Bi$_2$Se$_3$ exhibit differential conductance characteristics which appear to be dominated by tunneling, roughly reproducing the Bi$_2$Se$_3$ density of states. Similar results were obtained for BLG on…
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Hybrid graphene-topological insulator (TI) devices were fabricated using a mechanical transfer method and studied via electronic transport. Devices consisting of bilayer graphene (BLG) under the TI Bi$_2$Se$_3$ exhibit differential conductance characteristics which appear to be dominated by tunneling, roughly reproducing the Bi$_2$Se$_3$ density of states. Similar results were obtained for BLG on top of Bi$_2$Se$_3$, with 10-fold greater conductance consistent with a larger contact area due to better surface conformity. The devices further show evidence of inelastic phonon-assisted tunneling processes involving both Bi$_2$Se$_3$ and graphene phonons. These processes favor phonons which compensate for momentum mismatch between the TI $Γ$ and graphene $K, K'$ points. Finally, the utility of these tunnel junctions is demonstrated on a density-tunable BLG device, where the charge-neutrality point is traced along the energy-density trajectory. This trajectory is used as a measure of the ground-state density of states.
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Submitted 30 April, 2015;
originally announced April 2015.
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Electrostatic Coupling between Two Surfaces of a Topological Insulator Nanodevice
Authors:
Valla Fatemi,
Benjamin Hunt,
Hadar Steinberg,
Stephen L. Eltinge,
Fahad Mahmood,
Nicholas P. Butch,
Kenji Watanabe,
Takashi Taniguchi,
Nuh Gedik,
Ray Ashoori,
Pablo Jarillo-Herrero
Abstract:
We report on electronic transport measurements of dual-gated nano-devices of the low-carrier density topological insulator Bi1.5Sb0.5Te1.7Se1.3. In all devices the upper and lower surface states are independently tunable to the Dirac point by the top and bottom gate electrodes. In thin devices, electric fields are found to penetrate through the bulk, indicating finite capacitive coupling between t…
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We report on electronic transport measurements of dual-gated nano-devices of the low-carrier density topological insulator Bi1.5Sb0.5Te1.7Se1.3. In all devices the upper and lower surface states are independently tunable to the Dirac point by the top and bottom gate electrodes. In thin devices, electric fields are found to penetrate through the bulk, indicating finite capacitive coupling between the surface states. A charging model allows us to use the penetrating electric field as a measurement of the inter-surface capacitance $C_{TI}$ and the surface state energy-density relationship $μ$(n), which is found to be consistent with independent ARPES measurements. At high magnetic fields, increased field penetration through the surface states is observed, strongly suggestive of the opening of a surface state band gap due to broken time-reversal symmetry.
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Submitted 2 October, 2014;
originally announced October 2014.
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Superconductor-Nanowire Devices from Tunneling to the Multichannel Regime: Zero-Bias Oscillations and Magnetoconductance Crossover
Authors:
H. O. H. Churchill,
V. Fatemi,
K. Grove-Rasmussen,
M. T. Deng,
P. Caroff,
H. Q. Xu,
C. M. Marcus
Abstract:
We present transport measurements in superconductor-nanowire devices with a gated constriction forming a quantum point contact. Zero-bias features in tunneling spectroscopy appear at finite magnetic fields, and oscillate in amplitude and split away from zero bias as a function of magnetic field and gate voltage. A crossover in magnetoconductance is observed: Magnetic fields above ~ 0.5 T enhance c…
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We present transport measurements in superconductor-nanowire devices with a gated constriction forming a quantum point contact. Zero-bias features in tunneling spectroscopy appear at finite magnetic fields, and oscillate in amplitude and split away from zero bias as a function of magnetic field and gate voltage. A crossover in magnetoconductance is observed: Magnetic fields above ~ 0.5 T enhance conductance in the low-conductance (tunneling) regime but suppress conductance in the high-conductance (multichannel) regime. We consider these results in the context of Majorana zero modes as well as alternatives, including Kondo effect and analogs of 0.7 structure in a disordered nanowire.
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Submitted 10 March, 2013;
originally announced March 2013.
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Electrically tunable surface-to-bulk coherent coupling in topological insulator thin films
Authors:
Hadar Steinberg,
Jean-Baptiste Laloë,
Valla Fatemi,
Jagadeesh S. Moodera,
Pablo Jarillo-Herrero
Abstract:
We study coherent transport in density tunable micro-devices patterned from thin films of the topological insulator (TI) Bi2Se3. The devices exhibit pronounced electric field effect, including ambipolar modulation of the resistance with an on/off ratio of 500%. We show that the weak antilocalization (WAL) correction to conductance is sensitive to the number of coherently coupled channels, which in…
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We study coherent transport in density tunable micro-devices patterned from thin films of the topological insulator (TI) Bi2Se3. The devices exhibit pronounced electric field effect, including ambipolar modulation of the resistance with an on/off ratio of 500%. We show that the weak antilocalization (WAL) correction to conductance is sensitive to the number of coherently coupled channels, which in a TI includes the top and bottom surface and the bulk carriers. These are separated into coherently independent channels by the application of gate voltage and at elevated temperatures. Our results are consistent with a model where channel separation is determined by a competition between the coherence time and surface-bulk scattering time.
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Submitted 18 January, 2012; v1 submitted 7 April, 2011;
originally announced April 2011.