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arXiv:1205.2361v2 [cond-mat.str-el] 07 Aug 2012

Magneto-optical and optical probes of gapped ground states of bilayer graphene

E.V. Gorbar Affiliation: Department of Physics, Taras Shevchenko National Kiev University, 6 Academician Glushkov ave., Kiev 03680, Ukraine Affiliation: Bogolyubov Institute for Theoretical Physics, National Academy of Science of Ukraine, 14-b Metrologicheskaya Street, Kiev, 03680, Ukraine    V.P. Gusynin Affiliation: Bogolyubov Institute for Theoretical Physics, National Academy of Science of Ukraine, 14-b Metrologicheskaya Street, Kiev, 03680, Ukraine    A.B. Kuzmenko Affiliation: DPMC, University of Geneva, 1211 Geneva 4, Switzerland    S.G. Sharapov Affiliation: Bogolyubov Institute for Theoretical Physics, National Academy of Science of Ukraine, 14-b Metrologicheskaya Street, Kiev, 03680, Ukraine
August 24, 2026
Abstract

We study the influence of different kinds of gaps in a quasiparticle spectrum on longitudinal and transverse optical conductivities of bilayer graphene. An exact analytical expression for magneto-optical conductivity is derived using a low-energy two-band Hamiltonian. We consider how the layer asymmetry gap caused by a bias electric field and a time-reversal symmetry breaking gap affect the absorption lines. The limit of zero magnetic field is then analyzed for an arbitrary carrier density in the two-band model. For a neutral bilayer graphene, the optical Hall and longitudinal conductivities are calculated exactly in the four-band model with four different gaps and zero magnetic field. It is shown that two different time-reversal symmetry breaking states can be distinguished by analyzing the dependence of the optical Hall conductivity on the energy of photon. These time-reversal symmetry breaking states are expected to be observed experimentally via optical polarization rotation either in the Faraday or Kerr effects. We analyze a possibility of such an experiment for a free-standing graphene, graphene on a thick substrate, and graphene on a double-layer substrate.

pacs
78.67.Wj, 78.20.Ls, 81.05.ue

I Introduction

Since its experimental discovery,[1] bilayer graphene became a separate subject of research due to the features which make it unique among the other two-dimensional condensed matter systems. Its low-energy electron spectrum[2] combines characteristics of monolayer graphene and traditional two-dimensional electron systems. It consists of two inequivalent pairs of parabolic valence and conductance bands, touching each other at KK and KK^{\prime} points, and charge carriers are massive and possess a chirality.

A unique feature of bilayer graphene is that an electric field EE_{\perp} applied perpendicular to the layers results in the opening of a tunable gap between the valence and conduction bands. The value of EE_{\perp} can be controlled externally by chemical doping and gating. Since, in contrast to single layer graphene, the density of states remains finite even in the unbiased and undoped (neutral) bilayer, there are theoretical predictions[3, 4, 5, 6, 7] that the electron-electron interaction can result in spontaneous symmetry breaking and opening a gap even in the absence of a magnetic field. The nature of the gapped state is much debated in the literature. Possible scenarios include anomalous quantum Hall (QAH), quantum spin Hall (QSH), layer antiferromagnet (LAF) states, etc. (see Ref. 8 for a general discussion). Technically, all these gapped states differ in the way how they break an approximate SU(4)SU(4) spin-valley symmetry of the low energy Hamiltonian of bilayer graphene.

In an external magnetic field symmetric bilayer graphene exhibits anomalous quantum Hall (QH) effect [1] with the filling factors ν=±4n\nu=\pm 4n with n=1,2,n=1,2,\ldots. As in single-layer graphene, this QH effect is caused by the anomaly of the zero-energy lowest Landau level which is eightfold degenerate. The subsequent experiments [9, 10, 11, 12, 13, 14, 15, 16] showed that in higher magnetic fields the degeneracy of the lowest Landau level is completely resolved and new QH states with filling factors ν=0,±1,±2,±3\nu=0,\pm 1,\pm 2,\pm 3 appear. It turned out that the activation energy gaps for these QH states depend linearly on the magnetic field BB. This behavior can be contrasted with the case of single layer graphene, where the corresponding gaps scale as B\sqrt{B}. As suggested in Refs. 5, 17, the difference between bilayer and single layer graphene is caused by a strong screening of the Coulomb interaction in the former.

Interestingly, the experiments [11, 15] demonstrated that neutral bilayer graphene remains gapped even when E=0E_{\perp}=0 and an applied magnetic field BB vanishes. In particular, the authors of Ref. 15 concluded that the results of their measurements are most consistent with the LAF state. Nevertheless, further theoretical and experimental work is necessary to ascertain the nature of the gapped state.

Optical spectroscopy studies proved to be a useful tool in investigation of carbon systems (see Refs. 18, 19 for an overview). The relativistic-like gapless dispersion of quasiparticles in single layer graphene results in a universal and constant optical conductivity σxx=e2/4\sigma_{xx}=e^{2}/4\hbar for the photon energies above the threshold which is twice the Fermi energy.[20, 21, 22, 23, 24, 25, 26, 27, 28] Magneto-optical properties of single layer graphene reveal themselves in the spectroscopy of Landau levels transitions [29, 30] and the giant Faraday effect. [31] Optical properties of gapped single layer graphene were intensively studied also in a series of works both in zero and finite magnetic field. [32, 33, 34, 35, 36]

Optical methods turned out to be especially fruitful for bilayer graphene. Theoretical description of its optical and magneto-optical properties[37, 38, 39, 40, 41] involves more parameters as compared to single layer graphene and all these parameters were found experimentally[42, 43, 44, 45, 46] in the B=0B=0 case as well as in the presence of magnetic field.[47]

As suggested in Ref. 48, optical methods could also be used for investigating the symmetry breaking gapped states in bilayer graphene discussed above. A particular case of the QAH state[48] which breaks time-reversal symmetry explores the idea that such state would show up in the rotation of the polarization of light. The papers on magneto-optical conductivity[37, 38] do not take into account the presence of gapped states in bilayer graphene, while the paper[48] considers only the case of time-reversal symmetry breaking gapped state in zero magnetic field. In a recent paper, [49] it was shown that the infrared and far-infrared absorption spectroscopy in bilayer graphene at zero or finite doping in zero magnetic field can distinguish gapped states from the gapless unperturbed and nematic states due to their qualitatively different lineshapes. Since now there is an interest in crossover between various gapped states at finite and zero magnetic field, in the present paper we derive analytical expressions for magneto-optical conductivity which include both arbitrary gapped states and finite magnetic field.

The paper is organized as follows. In Sec. II, we introduce the model 4×44\times 4 and 2×22\times 2 Hamiltonians and discuss various types of gaps. In Sec. III analytical expressions for optical conductivities in a magnetic field for circularly polarized light are derived using the two-band model. We discuss how the opening of different kinds of gaps influences the conductivities. Then, the limit of zero magnetic field is analyzed for an arbitrary carrier density. In Sec. IV, we derive the optical Hall conductivity in zero magnetic field in the presence of time-reversal symmetry breaking gap. In contrast to Ref. 48, we use a four-band model to derive an exact expression for the transverse conductivity which allows us to probe a wider range of frequencies. We consider the general case where both time-reversal-invariant and -noninvariant gaps are present. The time-reversal-invariant gap can be generated due to a perpendicular bias electric field, therefore, we study the optical Hall conductivity dependence on applied bias electric field. In Sec. V, we consider the detection of the time-reversal symmetry breaking states in the optical polarization rotation experiment, viz., by measuring the Faraday or Kerr effects. We analyze a possibility of such an experiment for a free-standing graphene, graphene on a thick substrate, and graphene on a dielectric layer on top of a thick layer. Finally, in the Discussion section, we give a brief summary of our results, and the Appendix at the end of the paper contains an analysis of the optical spectral weight.

II Models and notation

We consider bilayer graphene in the continuum approximation using both a 4×44\times 4 Hamiltonian in the absence of magnetic field B=0B=0 and its low-energy 2×22\times 2 approximation in the case B0B\neq 0. The effective Hamiltonian of the four-component model at fixed spin, s=±s=\pm, and valley, ξ=±\xi=\pm, reads as

H=ξ(Δξs00vFπ0ΔξsvFπ00vFπ0ξγ1vFπ0ξγ10),H=\xi\left(\begin{array}[]{cccc}\Delta_{\xi s}&0&0&v_{F}\pi^{\dagger}\\ 0&-\Delta_{\xi s}&v_{F}\pi&0\\ 0&v_{F}\pi^{\dagger}&0&\xi\gamma_{1}\\ v_{F}\pi&0&\xi\gamma_{1}&0\end{array}\right)\,, (1)

where π=p^x+ip^y\pi=\hat{p}_{x}+i\hat{p}_{y}, vF106m/sv_{F}\approx 10^{6}\mbox{m/s} is the in-plane Fermi velocity, γ1=0.38eV\gamma_{1}={\text{\unboldmath$\mathrm{0{.}38}$}}\,\text{\unboldmath$\mathrm{eV}$} is the inter-layer hopping between pairs of orbitals that lie directly below and above each other. In our study, we neglect the tight-binding parameters γ3\gamma_{3} (which leads to a trigonal warping of the band structure at low energies) and γ4\gamma_{4} whose effects fall beyond the scope of the present paper.

The Hamiltonian acts on wave function with four components corresponding to the atomic sites A1A1, B2B2, A2A2, B1B1 in the valley KK (ξ=+1\xi=+1) and B2B2, A1A1, B1B1, A2A2 in the valley KK^{\prime} (ξ=1\xi=-1). In the effective Hamiltonian we included also quasiparticle gaps Δξs\Delta_{\xi s} dynamically generated due to the electron-electron interaction.

The possible gapped states [50, 6, 17] can be classified considering how the gap Δξs\Delta_{\xi s} depends on valley and spin indices. Obviously, selecting gapped states symmetric and antisymmetric in valley and spin, the most general expression for the gap is given by

Δξs=U+sUT+ξΔT+ξsΔ,\Delta_{\xi s}=U+sU_{T}+\xi\Delta_{T}+\xi s\Delta, (2)

where while gaps UU and Δ\Delta are invariant with respect to the time reversal symmetry, gaps ΔT\Delta_{T} and UTU_{T} are not.

Among these four gaps the first gap UU besides being dynamically generated can be induced by gating which creates a perpendicular electric field EE_{\perp}. In this case we will denote it as U0(=eEd/2CLOSEU_{0}(=eE_{\perp}d/2), where d=0.35nmd={\text{\unboldmath$\mathrm{0{.}35}$}}\,\text{\unboldmath$\mathrm{nm}$} is the distance between layers. Thus the gap UU is related to the layer-polarized state caused by a potential difference between layers. Note that since the gap term in Eq. (1) is introduced in the left upper corner, strictly speaking the gap UU only approximates the layer asymmetry gap [see the discussion below Eq. (3)]. In the notations of Ref. 8, the state related to the gap UU is called quantum valley Hall (QVH) state. The gap UTU_{T} corresponds to the layer antiferromagnet state, ΔT\Delta_{T} corresponds to the quantum anomalous Hall state,[6, 51], and Δ\Delta is related to the spin-polarized or quantum spin Hall state.[52] The corresponding order parameters are summarized in Table 1.

Ordered Gap Order parameter Broken time-reversal
State symmetry
QVH UU ψA1KsψA1Ks+ψA1KsψA1KsψB2KsψB2KsψB2KsψB2Ks\langle\psi^{\dagger}_{A1Ks}\psi_{A1Ks}+\psi^{\dagger}_{A1K^{\prime}s}\psi_{A1K^{\prime}s}-\psi^{\dagger}_{B2Ks}\psi_{B2Ks}-\psi^{\dagger}_{B2K^{\prime}s}\psi_{B2K^{\prime}s}\rangle no
LAF UTU_{T} ψA1KssψA1Ks+ψA1KssψA1KsψB2KssψB2KsψB2KssψB2Ks\langle\psi^{\dagger}_{A1Ks}s\psi_{A1Ks}+\psi^{\dagger}_{A1K^{\prime}s}s\psi_{A1K^{\prime}s}-\psi^{\dagger}_{B2Ks}s\psi_{B2Ks}-\psi^{\dagger}_{B2K^{\prime}s}s\psi_{B2K^{\prime}s}\rangle yes
QAH ΔT\Delta_{T} ψA1KsψA1KsψA1KsψA1KsψB2KsψB2Ks+ψB2KsψB2Ks\langle\psi^{\dagger}_{A1Ks}\psi_{A1Ks}-\psi^{\dagger}_{A1K^{\prime}s}\psi_{A1K^{\prime}s}-\psi^{\dagger}_{B2Ks}\psi_{B2Ks}+\psi^{\dagger}_{B2K^{\prime}s}\psi_{B2K^{\prime}s}\rangle yes
QSH Δ\Delta ψA1KssψA1KsψA1KssψA1KsψB2KssψB2Ks+ψB2KssψB2Ks\langle\psi^{\dagger}_{A1Ks}s\psi_{A1Ks}-\psi^{\dagger}_{A1K^{\prime}s}s\psi_{A1K^{\prime}s}-\psi^{\dagger}_{B2Ks}s\psi_{B2Ks}+\psi^{\dagger}_{B2K^{\prime}s}s\psi_{B2K^{\prime}s}\rangle no
Table 1: Possible gapped states in bilayer graphene at neutral point. QVH, quantum valley Hall; LAF, layer antiferromagnet; QAH, quantum anomalous Hall; QSH, quantum spin Hall. The summation over s=±s=\pm is implied.

All these order parameters except the first one were suggested for describing the ground state of bilayer graphene at the neutral point in the absence of external electric and magnetic fields. Indeed, while for a sufficiently large top-bottom voltage difference U0U_{0}, the layer polarized QVH state is realized, the experiments [11, 15] demonstrated that as the value U0U_{0} decreases there is a phase transition to another state. This eliminates the QVH state as a possible candidate for the ground state of bilayer graphene at the neutral point in the absence of external fields.

On the other hand, for sufficiently large magnetic field BB, the spin-polarized QSH state is realized. Recent experimental data[15] show the absence of a phase transition as BB decreases to zero. This suggests that the QSH state could be the ground state of bilayer graphene at the neutral point in the absence of external fields. According to Ref. 53, the LAF state is adiabatically connected to the QSH state at high magnetic field, therefore, the LAF state could be also the ground state of neutral bilayer graphene in the absence of external fields.

To investigate the role of different kinds of gaps in the magneto-transport properties of bilayer graphene, it is convenient to use the effective low-energy Hamiltonian which was derived in Ref. 2 using Green’s functions. The 2×22\times 2 Hamiltonian can also be obtained from the 4×44\times 4 Hamiltonian by integrating out B1B1, A2A2 fields which correspond to the Bernal stacked orbitals and is valid within the energy range |ϵ|<γ1/4|\epsilon|<\gamma_{1}/4. The trigonal warping term neglected in Eq. (1) also restricts the validity of the effective Hamiltonian at low energies.[2] In an external magnetic field this Hamiltonian takes the form

Heff=(ξΔξs(π^)22mπ^22mξΔξs),H^{\mathrm{eff}}=\left(\begin{array}[]{cc}\xi\Delta_{\xi s}&-\frac{(\hat{\pi}^{\dagger})^{2}}{2m}\\ -\frac{\hat{\pi}^{2}}{2m}&-\xi\Delta_{\xi s}\end{array}\right), (3)

where π^=(iDxDy)\hat{\pi}=\hbar(-iD_{x}-D_{y}) is now expressed via the covariant derivatives Di=i+(ie/c)AiD_{i}=\partial_{i}+(ie/\hbar c)A_{i} with the electron charge e<0-e<0, and the effective mass of the carriers m=γ1/(2vF2)m=\gamma_{1}/(2v_{F}^{2}). The external magnetic field 𝐁=×𝐀\mathbf{B}=\nabla\times\mathbf{A} is applied perpendicular to the plane along the positive zz axis. The Hamiltonian (3) acts on a wave function with two components corresponding to the atomic sites A1A1, B2B2 in the valley KK (ξ=+1\xi=+1) and B2B2, A1A1 in the valley KK^{\prime} (ξ=1\xi=-1).

It has to be noted that different gap terms in the initial 4×44\times 4 Hamiltonian may result in the same effective 2×22\times 2 Hamiltonian. For example, two different Hamiltonians HU=ξdiag(U,U,0,0)H_{U}^{\prime}=\xi\mbox{diag}(U,-U,0,0) which corresponds to Eq. (1) with Δξs=U\Delta_{\xi s}=U and HU=ξdiag(U,U,U,U)H_{U}=\xi\mbox{diag}(U,-U,-U,U) which takes into account the asymmetry between on-site energies in the two layers, result in the same HUeff=ξdiag(U,U)H^{\mathrm{eff}}_{U}=\xi\mbox{diag}(U,-U). One can check that the energy spectrum corresponding to the Hamiltonians HUH_{U} and HUH_{U}^{\prime} is practically identical. For zero magnetic field the combined effective Hamiltonian with the gap Δξs=U\Delta_{\xi s}=U for two valleys, H(𝐩,U)=Heff(ξ=+1,𝐩,U)Heff(ξ=1,𝐩,U)H(\mathbf{p},U)=H^{\mathrm{eff}}(\xi=+1,\mathbf{p},U)\oplus H^{\mathrm{eff}}(\xi=-1,\mathbf{p},U) is time-reversal invariant under the transformation (Π1τ1)H(𝐩,U)(Π1τ1)=H(𝐩,U)(\Pi_{1}\otimes\tau_{1})H^{\ast}(\mathbf{p},U)(\Pi_{1}\otimes\tau_{1})=H(-\mathbf{p},U), where Π1\Pi_{1} swaps ξ=+1\xi=+1 and ξ=1\xi=-1 in valley space.[2] As in the 4×44\times 4 case the presence of the gap Δξs=ξΔT\Delta_{\xi s}=\xi\Delta_{T} breaks the time-reversal symmetry. In the presence of a magnetic field the corresponding symmetry transformation becomes (Π1τ1)H(𝐩,ΔT,B)(Π1τ1)=H(𝐩,ΔT,B)(\Pi_{1}\otimes\tau_{1})H^{\ast}(\mathbf{p},\Delta_{T},B)(\Pi_{1}\otimes\tau_{1})=H(-\mathbf{p},-\Delta_{T},-B).

We calculate the optical conductivity analytically using the Kubo formula,

σij(Ω)=[ΠijR(Ω+i0)ΠijR(0)]iΩ,\sigma_{ij}(\Omega)=\frac{\hbar[\Pi_{ij}^{R}(\Omega+i0)-\Pi_{ij}^{R}(0)]}{i\Omega}, (4)

where ΠijR(Ω+i0)\Pi_{ij}^{R}(\Omega+i0) is the retarded current-current correlation function obtained by analytical continuation [ΠijR(Ω)=Πij(iΩmΩ+iϵ)\Pi^{R}_{ij}(\Omega)=\Pi_{ij}(i\Omega_{m}\to\Omega+i\epsilon)] from its imaginary time expression, and Ω\Omega is the energy of photon. Neglecting the vertex corrections, the calculation of the current-current correlation function reduces to the evaluation of the bubble diagram

Πij(iΩm)=1V0βdτeiΩmτd2rd2r×tr[ji^(𝐫)G(𝐫,𝐫,τ)jj^(𝐫)G(𝐫,𝐫,τ)],\begin{split}&\Pi_{ij}(i\Omega_{m})=-\frac{1}{V}\int\limits_{0}^{\beta}d\tau e^{i\Omega_{m}\tau}\int d^{2}rd^{2}r^{\prime}\\ &\times{\rm tr}\left[\hat{j_{i}}({\bf r})G(\mathbf{r},\mathbf{r}^{\prime},\tau)\hat{j_{j}}({\bf r}^{\prime})G(\mathbf{r}^{\prime},\mathbf{r},-\tau)\right],\end{split} (5)

where ji^(𝐫)=cH/Ai\hat{j_{i}}({\bf r})=-c\partial H/\partial A^{i} is the electric current density operator, G(𝐫,𝐫,τ)G(\mathbf{r},\mathbf{r}^{\prime},\tau) is the electron Green’s function (GF), VV is the volume (area) of the system, β=1/T\beta=1/T is the inverse temperature, Ωm=2πm/β\Omega_{m}=2\pi m/\beta, and tr not only takes care of the 4×44\times 4 or 2×22\times 2 matrices, but also includes summation over the valley and spin indices. In the presence of a magnetic field the GF is not translational invariant and a special care should be taken in treating the translation noninvariant phase of the GF as done in Sec. III. When the magnetic field is absent, the GF’s is translation invariant and one can directly go from Eq. (5) to the frequency-momentum representation of the polarization operator as done in Sec. IV.

III Two-band model: optical conductivity in an external magnetic field

In this section, we will consider the spin singlet gap Δξ=U+ξΔT\Delta_{\xi}=U+\xi\Delta_{T}. The energies of the Landau levels in the two-band model are

Enξ=ξΔξ,n=0,1,Eαnξ=αMnξ,Mnξ=Δξ2+ωc2n(n1),n2,\begin{split}E_{n\xi}&=-\xi\Delta_{\xi},\,\,n=0,1,\\ E_{\alpha n\xi}&=\alpha M_{n\xi},\,M_{n\xi}=\sqrt{\Delta_{\xi}^{2}+\omega^{2}_{c}n(n-1)},\,n\geq 2,\end{split} (6)

where α=±\alpha=\pm, ωc=eB/mc=2/ml2\omega_{c}=\hbar eB/mc=\hbar^{2}/ml^{2} is the cyclotron energy, and l=c/eBl=\sqrt{\hbar c/eB} is the magnetic length. Using the values γ1=0.38eV\gamma_{1}={\text{\unboldmath$\mathrm{0{.}38}$}}\,\text{\unboldmath$\mathrm{eV}$} and vF=1.02×106m/sv_{F}={\text{\unboldmath$\mathrm{1{.}02{}\times{}10^{6}}$}}\,\text{\unboldmath$\mathrm{m/s}$} from Ref. 45 (see also Ref. 19) one can estimate the effective mass of carriers in bilayer as m=0.032mem=0.032m_{e}, where mem_{e} is the electron mass. Accordingly, the cyclotron energy is equal to ωc0.116meV(me/m)B[T]=3.62meVB[T]\omega_{c}\approx{\text{\unboldmath$\mathrm{0{.}116}$}}\,\text{\unboldmath$\mathrm{m}$}eV(m_{e}/m)B[T]={\text{\unboldmath$\mathrm{3{.}62}$}}\,\text{\unboldmath$\mathrm{m}$}eVB[T].

III.1 Green’s function and calculation of Πij(Ω)\Pi_{ij}(\Omega)

In the two-band model (3) in the Landau gauge 𝐀=(0,Bx)\mathbf{A}=(0,Bx), the GF G(𝐫,𝐫,ω)G(\mathbf{r},\mathbf{r}^{\prime},\omega) in the mixed coordinate-frequency representation has a form

G(𝐫,𝐫,ω)=exp(i(x+x)(yy)2l2)G~(𝐫𝐫,ω),G(\mathbf{r},\mathbf{r}^{\prime},\omega)=\exp\left(-i\frac{(x+x^{\prime})(y-y^{\prime})}{2l^{2}}\right)\tilde{G}(\mathbf{r}-\mathbf{r}^{\prime},\omega), (7)

where the translation invariant part of the GF is represented as a sum over the Landau levels[17]

G~(𝐫,ω)=12πl2ez/2n=01(ω+μ)2Mn2×((ω+μ+ξΔξ)Ln2(z)2(xiy)22ml4Ln22(z)2(x+iy)22ml4Ln22(z)(ω+μξΔξ)Ln(z)).\begin{split}&\tilde{G}(\mathbf{r},\omega)=\frac{1}{2\pi l^{2}}\,e^{-z/2}\sum\limits_{n=0}^{\infty}\frac{1}{(\omega+\mu)^{2}-M^{2}_{n}}\\ &\times\left(\begin{array}[]{cc}(\omega+\mu+\xi\Delta_{\xi})L_{n-2}(z)&\frac{\hbar^{2}(x-iy)^{2}}{2ml^{4}}L^{2}_{n-2}(z)\\ \frac{\hbar^{2}(x+iy)^{2}}{2ml^{4}}L^{2}_{n-2}(z)&(\omega+\mu-\xi\Delta_{\xi})L_{n}(z)\end{array}\right).\end{split} (8)

Here z=𝐫2/(2l2)z=\mathbf{r}^{2}/(2l^{2}), Lnα(z)L_{n}^{\alpha}(z) are associated Laguerre polynomials (by the definition L2α(z)=L1α(z)0L^{\alpha}_{-2}(z)=L^{\alpha}_{-1}(z)\equiv 0), and μ\mu is the chemical potential. For brevity of notation the subscript ξ\xi in MnξM_{n\xi} is omitted in what follows, i.e. Mn=MnξM_{n}=M_{n\xi}. Since the 2×22\times 2 Hamiltonian is quadratic in π^\hat{\pi} and π^\hat{\pi}^{\dagger}, the electric current operator contains the derivatives

jx^(𝐫)=em(0ππ0),jy^(𝐫)=em(0iπiπ0).\hat{j_{x}}({\bf r})=\frac{e}{m}\left(\begin{array}[]{cc}0&\pi^{\dagger}\\ \pi&0\end{array}\right),\quad\hat{j_{y}}({\bf r})=\frac{e}{m}\left(\begin{array}[]{cc}0&-i\pi^{\dagger}\\ i\pi&0\end{array}\right)\,. (9)

The phase factors in Eq. (5) cancel and we obtain at finite temperature

Πij(iΩm)=1Vd2rd2rTn=tr[ji~(𝐫,𝐫)G~(𝐫,𝐫,iωn)jj~(𝐫,𝐫)G~(𝐫,𝐫,iωn+iΩm)],\begin{split}\hskip-5.69054pt&\Pi_{ij}(i\Omega_{m})=-\frac{1}{V}\int d^{2}rd^{2}r^{\prime}T\sum\limits_{n=-\infty}^{\infty}\\ \hskip-5.69054pt&{\rm tr}\left[\tilde{j_{i}}({\bf r},{\bf r}^{\prime})\tilde{G}(\mathbf{r},\mathbf{r}^{\prime},i\omega_{n})\tilde{j_{j}}({\bf r}^{\prime},{\bf r})\tilde{G}(\mathbf{r}^{\prime},\mathbf{r},i\omega_{n}+i\Omega_{m})\right],\end{split} (10)

where ωn=π(2n+1)/β\omega_{n}=\pi(2n+1)/\beta and

jx~(𝐫,𝐫)=em(0ixyixxi(yy)2l2ix+y+ixx+i(yy)2l20),jy~(𝐫,𝐫)=em(0x+iyxxi(yy)2l2x+iyxx+i(yy)2l20).\begin{split}\tilde{j_{x}}({\bf r},{\bf r}^{\prime})&=\frac{e\hbar}{m}\left(\begin{array}[]{cc}0&-i\partial_{x}-\partial_{y}-i\frac{x-x^{\prime}-i(y-y^{\prime})}{2l^{2}}\\ -i\partial_{x}+\partial_{y}+i\frac{x-x^{\prime}+i(y-y^{\prime})}{2l^{2}}&0\end{array}\right),\\ \tilde{j_{y}}({\bf r},{\bf r}^{\prime})&=\frac{e\hbar}{m}\left(\begin{array}[]{cc}0&-\partial_{x}+i\partial_{y}-\frac{x-x^{\prime}-i(y-y^{\prime})}{2l^{2}}\\ \partial_{x}+i\partial_{y}-\frac{x-x^{\prime}+i(y-y^{\prime})}{2l^{2}}&0\end{array}\right).\end{split} (11)

Noting that ji~(𝐫,𝐫)=ji~(𝐫𝐫)\tilde{j_{i}}({\bf r},{\bf r}^{\prime})=\tilde{j_{i}}({\bf r}-{\bf r}^{\prime}) depend on the difference of the coordinates 𝐫𝐫{\bf r}-{\bf r}^{\prime}, one can integrate over 𝐫+𝐫{\bf r}+{\bf r}^{\prime} in Eq. (10) canceling the volume factor VV in the denominator

Πij(iΩm)=Tn=d2rtr[ji~(𝐫)G~(𝐫,iωn)jj~(𝐫)G~(𝐫,iωn+iΩm)].\begin{split}&\Pi_{ij}(i\Omega_{m})=T\hskip-5.69054pt\sum\limits_{n=-\infty}^{\infty}\int d^{2}r\\ &{\rm tr}\left[\tilde{j_{i}}({\bf r})\tilde{G}(\mathbf{r},i\omega_{n})\tilde{j_{j}}({\bf r})\tilde{G}(\mathbf{r},i\omega_{n}+i\Omega_{m})\right].\end{split} (12)

Writing Eq. (12) we also used that G~(𝐫,iωn)\tilde{G}(\mathbf{r},i\omega_{n}) is even under the transformation 𝐫𝐫\mathbf{r}\rightarrow-\mathbf{r}, while ji~(𝐫)\tilde{j_{i}}({\bf r}) is odd.

The calculation of the optical conductivity follows closely the corresponding calculation done for monolayer graphene,[32, 33] so we directly proceed to the final expression. The only difference is that we introduce a finite Landau level width Γ\Gamma at the very end of the calculation in the final expressions for the conductivities. The final Γ=0\Gamma=0 expression for the polarization operator Π±R(Ω)ΠxxR(Ω)±iΠxyR(Ω)\Pi_{\pm}^{R}(\Omega)\equiv\Pi_{xx}^{R}(\Omega)\pm i\Pi_{xy}^{R}(\Omega) takes the form

Π±R(Ω)=e22πm2l4k=0(k+1)×λ,λ=±ξ=±nF(λMk+1)nF(λMk+2)λMk+2λMk+1±(Ω+i0)×[(1λλΔξ2Mk+1Mk+2)±ΩλλξΔξMk+1Mk+2],\begin{split}\Pi_{\pm}^{R}(\Omega)&=\frac{e^{2}\hbar^{2}}{\pi m^{2}l^{4}}\sum\limits_{k=0}^{\infty}(k+1)\\ &\times\sum_{\begin{subarray}{c}\lambda,\lambda^{\prime}=\pm\\ \xi=\pm\end{subarray}}\frac{n_{F}(\lambda M_{k+1})-n_{F}(\lambda^{\prime}M_{k+2})}{\lambda^{\prime}M_{k+2}-\lambda M_{k+1}\pm(\Omega+i0)}\\ &\times\left[\left(1-\frac{\lambda\lambda^{\prime}\Delta_{\xi}^{2}}{M_{k+1}M_{k+2}}\right)\pm\frac{\Omega\lambda\lambda^{\prime}\xi\Delta_{\xi}}{M_{k+1}M_{k+2}}\right],\end{split} (13)

where nF(ω)=1/[exp((ωμ)/T)+1]n_{F}(\omega)=1/[\exp((\omega-\mu)/T)+1] is the Fermi distribution function. It is clear that the last Ω\sim\Omega term in Π±\Pi_{\pm} may only be present if the time-reversal symmetry breaking gap, ΔT0\Delta_{T}\neq 0.

III.2 Magneto-optical conductivity

It is convenient to consider the optical conductivities σ±(Ω)=σxx(Ω)±iσxy(Ω)=[Π±R(Ω)Π±R(0)]/(iΩ)\sigma_{\pm}(\Omega)=\sigma_{xx}(\Omega)\pm i\sigma_{xy}(\Omega)=\hbar[\Pi_{\pm}^{R}(\Omega)-\Pi_{\pm}^{R}(0)]/(i\Omega) which correspond to the opposite circular polarizations of light. After introducing a finite width of Landau levels in Eq. (13), the final result for the complex conductivities reads as

σ±(Ω)=e23πm2l4k=0(k+1)×λ,λ=±ξ=±[nF(λMk+1)nF(λMk+2)]×[1λMk+2λMk+1(1λλΔξ2Mk+1Mk+2)±λλξΔξMk+1Mk+2]iΩλMk+2±λMk+1+2iΓ.\begin{split}\sigma_{\pm}&(\Omega)=\frac{e^{2}\hbar^{3}}{\pi m^{2}l^{4}}\sum\limits_{k=0}^{\infty}(k+1)\\ &\times\sum_{\begin{subarray}{c}\lambda,\lambda^{\prime}=\pm\\ \xi=\pm\end{subarray}}[n_{F}(\lambda M_{k+1})-n_{F}(\lambda^{\prime}M_{k+2})]\\ &\times\left[\frac{1}{\lambda^{\prime}M_{k+2}-\lambda M_{k+1}}\left(1-\frac{\lambda\lambda^{\prime}\Delta_{\xi}^{2}}{M_{k+1}M_{k+2}}\right)\right.\pm\\ &\left.\frac{\lambda\lambda^{\prime}\xi\Delta_{\xi}}{M_{k+1}M_{k+2}}\right]\frac{i}{\Omega\mp\lambda^{\prime}M_{k+2}\pm\lambda M_{k+1}+2i\Gamma}.\end{split} (14)

The expressions for conductivities in the case of more general gaps Δξs\Delta_{\xi s} are obtained from Eq. (14) by replacing Δξ\Delta_{\xi} with Δξs\Delta_{\xi s} and inserting the overall factor 1/21/2 and summing over the spin variable. Equation (14) is one of the main results of this paper which generalizes the results of Refs. 37, 38 to a finite Δξ\Delta_{\xi} case. For Δξ=0\Delta_{\xi}=0, there is a practically overall agreement between Eq. (14) and the corresponding expressions from Ref. 37, 38 except to the intensity of the 00 to 11 transition. To verify this issue, in Appendix A we consider the behavior of the spectral weight. We show both that our result agrees with the behavior of the spectral weight for B=0B=0 and that the weight is conserved when the chemical potential moves from the region M0<μ<M2M_{0}<\mu<M_{2} to the region μ>M2\mu>M_{2}.

It has to be stressed that rather simple analytical result (14) was possible to obtain because we used the effective 2×22\times 2 Hamiltonian. The 4×44\times 4 consideration is much more involved [40, 41]. Moreover, the neglected tight-binding terms, including the trigonal warping, can only be treated numerically[54] which is beyond the scope of the present work.

The scheme of Landau levels and allowed transitions for bilayer can be found, for example, in the review,[19] so that we can go directly to the discussion of the behavior of magneto-conductivity. In Figs. 1 and 2 we show the results based on the computation of Eq. (14) for the real part of σ±(Ω)\sigma_{\pm}(\Omega) in units of σ0=e2/(4)\sigma_{0}=e^{2}/(4\hbar) as a function of Ω\Omega measured in meV. The highest value of Ω=80mev\Omega={\text{\unboldmath$\mathrm{80}$}}\,\text{\unboldmath$\mathrm{mev}$} is less than γ1/4\gamma_{1}/4. In both figures we set B=3TB={\text{\unboldmath$\mathrm{3}$}}\,\text{\unboldmath$\mathrm{T}$}, T=5KT={\text{\unboldmath$\mathrm{5}$}}\,\text{\unboldmath$\mathrm{K}$} and Γ=2meV\Gamma={\text{\unboldmath$\mathrm{2}$}}\,\text{\unboldmath$\mathrm{meV}$}.

The reference case[37, 38] Δξ=0\Delta_{\xi}=0 is shown in Fig. 1. To scrutinize the curves in this figure, we provide the energies of the Landau levels, viz. for the n=2n=2 level |E±2|=M215.3meV|E_{\pm 2}|=M_{2}\approx{\text{\unboldmath$\mathrm{15{.}3}$}}\,\text{\unboldmath$\mathrm{meV}$}, for the n=3n=3 level |E±3|=M326.6meV|E_{\pm 3}|=M_{3}\approx{\text{\unboldmath$\mathrm{26{.}6}$}}\,\text{\unboldmath$\mathrm{meV}$} and for the n=4n=4 level |E±4|=M437.6meV|E_{\pm 4}|=M_{4}\approx{\text{\unboldmath$\mathrm{37{.}6}$}}\,\text{\unboldmath$\mathrm{meV}$}. The long dashed (red) curve is for σ+(Ω)\sigma_{+}(\Omega) and the dash-dotted (black) curve is for σ(Ω)\sigma_{-}(\Omega). Both curves are for μ=10meV\mu={\text{\unboldmath$\mathrm{10}$}}\,\text{\unboldmath$\mathrm{meV}$} which is less than E2E_{2}. Accordingly, in the long dashed (red) curve we observe the lines with the energy M2M0,115.3meVM_{2}-M_{0,1}\approx{\text{\unboldmath$\mathrm{15{.}3}$}}\,\text{\unboldmath$\mathrm{meV}$}, M2+M341.9meVM_{2}+M_{3}\approx{\text{\unboldmath$\mathrm{41{.}9}$}}\,\text{\unboldmath$\mathrm{meV}$} and M3+M464.2meVM_{3}+M_{4}\approx{\text{\unboldmath$\mathrm{64{.}2}$}}\,\text{\unboldmath$\mathrm{meV}$}. They correspond to the transitions from the Landau levels with the energy E0,1E_{0,1} to E2E_{2}, from E2E_{-2} to E3E_{3}, and from E3E_{-3} to E4E_{4}, respectively. Since for the opposite polarization of light presented by the dash-dotted (black) curve there is no transition between the 0th (n=0,1n=0,1) and E2E_{2} level, the first observed line is for the transition from E3E_{-3} to E2E_{2} levels with the energy M2+M3M_{2}+M_{3} coinciding with the second line on the previous curve. The second observed line corresponds to the transition from E4E_{-4} to E3E_{3} levels with the energy M3+M4M_{3}+M_{4}. The solid (blue) curve is for σ+(Ω)\sigma_{+}(\Omega) and the short dashed (green) curve is for σ(Ω)\sigma_{-}(\Omega), and both curves are for μ=20meV\mu={\text{\unboldmath$\mathrm{20}$}}\,\text{\unboldmath$\mathrm{meV}$}, so that E2<μ<E3E_{2}<\mu<E_{3}. Accordingly, in the solid (blue) curve the transition with the energy M2M1M_{2}-M_{1} is impossible, but instead the transition with the energy M3M211.3meVM_{3}-M_{2}\approx{\text{\unboldmath$\mathrm{11{.}3}$}}\,\text{\unboldmath$\mathrm{meV}$} develops. Two remaining transitions from E2E_{-2} to E3E_{3}, and from E3E_{-3} to E4E_{4} which coincide with the transitions on the considered above long dashed (red) and dash-dotted (black) curves are also present. For the opposite polarization of light presented by the short dashed (green) curve the only possible transition is from E4E_{-4} to E3E_{3}, so that the peak at the energy M3+M4M_{3}+M_{4} is the only peak shared by all curves.

Refer to caption
Figure 1: (Color online) The real part of the conductivity σ±(Ω)\sigma_{\pm}(\Omega) in units of σ0=e2/(4)\sigma_{0}=e^{2}/(4\hbar) versus the photon energy Ω\Omega in meV for magnetic field B=3TB={\text{\unboldmath$\mathrm{3}$}}\,\text{\unboldmath$\mathrm{T}$}, temperature T=5KT={\text{\unboldmath$\mathrm{5}$}}\,\text{\unboldmath$\mathrm{K}$}, and scattering rate Γ=2meV\Gamma={\text{\unboldmath$\mathrm{2}$}}\,\text{\unboldmath$\mathrm{meV}$}. Long dashed (σ+\sigma_{+}) and dash-dotted (σ\sigma_{-}) are for the chemical potential μ=10meV\mu={\text{\unboldmath$\mathrm{10}$}}\,\text{\unboldmath$\mathrm{meV}$}. The solid (σ+\sigma_{+}) and short dashed (σ\sigma_{-}) are for the chemical potential μ=20meV\mu={\text{\unboldmath$\mathrm{20}$}}\,\text{\unboldmath$\mathrm{meV}$}.

III.3 Comparison of the QVH and QAH states

Now we are at the position to discuss how the opening of either time-reversal symmetry breaking gap ΔT\Delta_{T} or preserving this symmetry gap UU changes the presented above picture (see Fig. 2).

Refer to caption
Figure 2: (Color online) The real part of the conductivity σ±(Ω)\sigma_{\pm}(\Omega) in units of σ0=e2/(4)\sigma_{0}=e^{2}/(4\hbar) versus the photon energy Ω\Omega in meV for magnetic field B=3TB={\text{\unboldmath$\mathrm{3}$}}\,\text{\unboldmath$\mathrm{T}$}, temperature T=5KT={\text{\unboldmath$\mathrm{5}$}}\,\text{\unboldmath$\mathrm{K}$}, scattering rate Γ=2meV\Gamma={\text{\unboldmath$\mathrm{2}$}}\,\text{\unboldmath$\mathrm{meV}$}, and the chemical potential μ=10meV\mu={\text{\unboldmath$\mathrm{10}$}}\,\text{\unboldmath$\mathrm{meV}$}. Long dashed (σ+\sigma_{+}) and dash-dotted (σ\sigma_{-}) are for the layer asymmetry gap U=5meVU={\text{\unboldmath$\mathrm{5}$}}\,\text{\unboldmath$\mathrm{meV}$} and the QAH gap ΔT=0\Delta_{T}=0. The solid (σ+\sigma_{+}) and short dashed (σ\sigma_{-}) are for the layer asymmetry gap U=0U=0 and the QAH gap ΔT=5meV\Delta_{T}={\text{\unboldmath$\mathrm{5}$}}\,\text{\unboldmath$\mathrm{meV}$}.

Again long dashed (red) curve is for σ+(Ω)\sigma_{+}(\Omega) and the dash-dotted (black) curve is for σ(Ω)\sigma_{-}(\Omega). Both curves are for μ=10meV\mu={\text{\unboldmath$\mathrm{10}$}}\,\text{\unboldmath$\mathrm{meV}$}, U=5meVU={\text{\unboldmath$\mathrm{5}$}}\,\text{\unboldmath$\mathrm{meV}$} and ΔT=0\Delta_{T}=0. The solid (blue) curve is for σ+(Ω)\sigma_{+}(\Omega) and the short dashed (green) curve is for σ(Ω)\sigma_{-}(\Omega), and while the value of the chemical potential is kept the same, μ=10meV\mu={\text{\unboldmath$\mathrm{10}$}}\,\text{\unboldmath$\mathrm{meV}$}, the gaps are now U=0U=0 and ΔT=5meV\Delta_{T}={\text{\unboldmath$\mathrm{5}$}}\,\text{\unboldmath$\mathrm{meV}$}. For relatively small values of the gaps, 5\mathrm{5}meV\mathrm{meV}, the energies of the levels with n0,1n\neq 0,1 remain practically intact, viz. |E±2|=M216.1meV|E_{\pm 2}|=M_{2}\approx{\text{\unboldmath$\mathrm{16{.}1}$}}\,\text{\unboldmath$\mathrm{meV}$}, |E±3|=M327.1meV|E_{\pm 3}|=M_{3}\approx{\text{\unboldmath$\mathrm{27{.}1}$}}\,\text{\unboldmath$\mathrm{meV}$} and |E±4|=M437.9meV|E_{\pm 4}|=M_{4}\approx{\text{\unboldmath$\mathrm{37{.}9}$}}\,\text{\unboldmath$\mathrm{meV}$}. Accordingly, the last two peaks from the right remain practically unchanged, the first from the right peak with the energy M3+M4M_{3}+M_{4} shifts in energy from 64.2\mathrm{64{.}2}meV\mathrm{meV} to 65\mathrm{65}meV\mathrm{meV}, and the second from the right peak with the energy M2+M3M_{2}+M_{3} shifts in energy from 41.9\mathrm{41{.}9}meV\mathrm{meV} to 43.2\mathrm{43{.}2}meV\mathrm{meV}. The most essential changes occur due to the partial removal of the degeneracy of the lowest Landau level.

Since we took μ=10meV\mu={\text{\unboldmath$\mathrm{10}$}}\,\text{\unboldmath$\mathrm{meV}$} all curves in Fig. 2 have to be compared with the two curves in Fig. 1 plotted for the same value of the chemical potential, viz. the long dashed σ+(Ω)\sigma_{+}(\Omega) curve and the dash-dotted σ(Ω)\sigma_{-}(\Omega) curve.

Let us begin with the σ+(Ω)\sigma_{+}(\Omega) polarization. We observe that for the gap U=5meVU={\text{\unboldmath$\mathrm{5}$}}\,\text{\unboldmath$\mathrm{meV}$} the peak at 15.3\mathrm{15{.}3}meV\mathrm{meV} corresponding to the transition from E0,1E_{0,1} to E2E_{2} levels is split into two peaks at 11.1\mathrm{11{.}1}meV\mathrm{meV} and 21.1\mathrm{21{.}1}meV\mathrm{meV}. These new peaks correspond to the transitions from the levels E0,1=UE_{0,1}=U and E0,1=UE_{0,-1}=-U to E2E_{2} level, respectively. For the time-reversal symmetry breaking gap, ΔT=5meV\Delta_{T}={\text{\unboldmath$\mathrm{5}$}}\,\text{\unboldmath$\mathrm{meV}$}, we observe that there is only one peak at 21.1\mathrm{21{.}1}meV\mathrm{meV} which corresponds to the transition from the only level E0,1=ΔTE_{0,-1}=-\Delta_{T} to E2E_{2}. One can verify that the position of the peak is sensitive to the sign of the gap, i.e. for ΔT=5meV\Delta_{T}=-{\text{\unboldmath$\mathrm{5}$}}\,\text{\unboldmath$\mathrm{meV}$} the position of the peak is at 11.1\mathrm{11{.}1}meV\mathrm{meV}, because there is the only level at the positive energy, E0,1=ΔT>0E_{0,1}=-\Delta_{T}>0.

For the σ(Ω)\sigma_{-}(\Omega) polarization, the discussed above transitions are forbidden. The only small difference is observed between the height of the second from the right peaks in the solid (blue) and short dashed (green) curves. These curves interchange when the sign of the gap ΔT\Delta_{T} is reversed to ΔT-\Delta_{T}.

It should be noted that although a measurement of the optical Hall conductivity σxy(Ω)\sigma_{xy}(\Omega) allows one to distinguish holes and electrons,[55] some essential features such as splitting of the absorption peak into two peaks depending on the type of the gap remain present even in the diagonal conductivity σxx(Ω)\sigma_{xx}(\Omega).

The obtained results allow us to conclude that the investigation of the optical magneto-conductivity may provide an additional insight into the nature of the gaps in the bilayer graphene. The features discussed here could be observed if the condition Γ<|Δξ|\Gamma<|\Delta_{\xi}| is satisfied. Since our value Γ=2meV\Gamma={\text{\unboldmath$\mathrm{2}$}}\,\text{\unboldmath$\mathrm{meV}$} is almost 5 times smaller than that used in Ref. 45 for fitting the data on the gated bilayer at B=0B=0, the observation of the discussed here effects requires samples of a much better quality.

III.4 Zero-field and dc limits

Starting from Eq. (14) one can reproduce correctly B0B\to 0 limit. Similarly to the consideration done for monolayer graphene,[33] introducing a continuum variable ω\omega instead of MnM_{n} given by Eq. (6) and replacing the sum over nn by the integral, in the limit Γ0\Gamma\to 0 for the real part of the diagonal optical conductivity σxx(Ω)=(σ+(Ω)+σ(Ω))/2\sigma_{xx}(\Omega)=(\sigma_{+}(\Omega)+\sigma_{-}(\Omega))/2 one obtains

Reσxx(Ω)=πe22hξ,s=±{2δ(Ω)|Δξs|dωω(1Δξs2ω2)×(14Tcosh2ωμT+14Tcosh2ω+μT)+12(1+4Δξs2Ω2)sinh(|Ω|/2T)θ(|Ω|2|Δξs|)cosh(μ/T)+cosh(Ω/2T)}.\begin{split}{\rm Re}\,&\sigma_{xx}(\Omega)=\frac{\pi e^{2}}{2h}\sum\limits_{\xi,s=\pm}\left\{2\delta(\Omega)\int\limits_{|\Delta_{\xi s}|}^{\infty}d\omega\omega\left(1-\frac{\Delta_{\xi s}^{2}}{\omega^{2}}\right)\right.\\ &\times\left.\left(\frac{1}{4T\cosh^{2}\frac{\omega-\mu}{T}}+\frac{1}{4T\cosh^{2}\frac{\omega+\mu}{T}}\right)\right.\\ &+\left.\frac{1}{2}\left(1+\frac{4\Delta_{\xi s}^{2}}{\Omega^{2}}\right)\frac{\sinh(|\Omega|/2T)\theta(|\Omega|-2|\Delta_{\xi s}|)}{\cosh(\mu/T)+\cosh(\Omega/2T)}\right\}.\end{split} (15)

Here we also included the dependence of the gap Δξs\Delta_{\xi s} on the spin variable ss. The first term in curved brackets corresponds to the Drude peak while the second one describes interband electron-photon scattering processes.

Finally, at T=0T=0 we obtain

Reσxx(Ω)=πe2hξ,s=±[δ(Ω)μ2Δξs2|μ|θ(|μ||Δξs|)+Ω2+4Δξs24Ω2θ(|Ω|2max(|μ|,|Δξs|)].\begin{split}{\rm Re}\,\sigma_{xx}(\Omega)=&\frac{\pi e^{2}}{h}\sum\limits_{\xi,s=\pm}\left[\delta(\Omega)\frac{\mu^{2}-\Delta_{\xi s}^{2}}{|\mu|}\theta(\left|\mu|-|\Delta_{\xi s}|\right)\right.\\ &+\left.\frac{\Omega^{2}+4\Delta_{\xi s}^{2}}{4\Omega^{2}}\theta(|\Omega|-2\mbox{max}(|\mu|,|\Delta_{\xi s}|)\right].\end{split} (16)

This expression for longitudinal optical conductivity is similar to that obtained for single layer graphene[20] and for topological insulators.[56] It is worth noting that there is a more deep analogy between the band structures and optical conductivities of the single layer graphene with Rashba term and biased bilayer graphene.[57]

Similarly, one can consider the B0B\to 0 limit for the optical Hall conductivity, σxy(Ω)=(σ+(Ω)σ(Ω))/(2i)\sigma_{xy}(\Omega)=(\sigma_{+}(\Omega)-\sigma_{-}(\Omega))/(2i) which takes the form

σxy(Ω)=4e2hξ,s=±ξΔξs|Δξs|dωnF(ω)nF(ω)4ω2(Ω+i0)2.\sigma_{xy}(\Omega)=-\frac{4e^{2}}{h}\sum\limits_{\xi,s=\pm}\xi\Delta_{\xi s}\int\limits_{|\Delta_{\xi s}|}^{\infty}d\omega\frac{n_{F}(\omega)-n_{F}(-\omega)}{4\omega^{2}-(\Omega+i0)^{2}}. (17)

Note that the last expression is an even function of chemical potential μ\mu in contrast to the Hall conductivity in a magnetic field which is an odd function of μ\mu. It is clear that σxy(Ω)0\sigma_{xy}(\Omega)\neq 0 only if the time-reversal symmetry breaking gaps UTU_{T} or ΔT\Delta_{T} are nonzero. For zero temperature we obtain

σxy(Ω)=e2h(Ω+i0)ξ,s=±ξΔξs×ln2max(|μ|,|Δξs|)+Ω+i02max(|μ|,|Δξs|)(Ω+i0).\begin{split}\sigma_{xy}(\Omega)&=\frac{e^{2}}{h(\Omega+i0)}\sum\limits_{\xi,s=\pm}\xi\Delta_{\xi s}\\ &\times\ln\frac{2\mbox{max}(|\mu|,|\Delta_{\xi s}|)+\Omega+i0}{2\mbox{max}(|\mu|,|\Delta_{\xi s}|)-(\Omega+i0)}.\end{split} (18)

Equation (18) resembles the result obtained for topological insulators. [56] Making the change of the variable, sξss\rightarrow\xi s, in Eqs.(16) and (18), one can see that both conductivities are invariant under the interchange UTΔ.U_{T}\leftrightarrow\Delta. The real part of the dc Hall conductivity takes the form

Reσxy=e2hξ,s=±ξΔξsmax(|μ|,|Δξs|)=e2hξ,s=±ξ{sgn(Δξs),|μ|<|Δξs|,Δξs|μ|,|μ||Δξs|,\begin{split}{\rm Re}\,\sigma_{xy}&=\frac{e^{2}}{h}\sum_{\xi,s=\pm}\xi\frac{\Delta_{\xi s}}{\mbox{max}(|\mu|,|\Delta_{\xi s}|)}\\ &=\frac{e^{2}}{h}\sum_{\xi,s=\pm}\xi\left\{\begin{array}[]{cc}{\rm sgn}(\Delta_{\xi s}),&|\mu|<|\Delta_{\xi s}|,\\ \frac{\Delta_{\xi s}}{|\mu|},&|\mu|\geq|\Delta_{\xi s}|,\end{array}\right.\end{split} (19)

which at μ=0\mu=0, U=UT=Δ=0U=U_{T}=\Delta=0, and ΔT0\Delta_{T}\neq 0 is in agreement with the corresponding expression in Ref. 58. At the neutral point, μ=0\mu=0, we have,

Reσxy=νe2h,ν=ξ,s=±ξsgn(Δξs).{\rm Re}\,\sigma_{xy}=\frac{\nu e^{2}}{h},\quad\nu=\sum\limits_{\xi,s=\pm}\xi\,{\rm sgn}(\Delta_{\xi s}). (20)

Clearly, the factor ν\nu can take the values ν=0,±2,±4\nu=0,\pm 2,\pm 4 depending on the relations between the gaps U,UT,ΔT,ΔU,U_{T},\Delta_{T},\Delta and their signs. The QAH gap ΔT\Delta_{T} and LAF gap UTU_{T} break time-reversal symmetry and this is the necessary condition for observation of nonzero Hall conductivity. For example, ν=4\nu=4 is realized in the case ΔT>0,U=UT=Δ=0\Delta_{T}>0,U=U_{T}=\Delta=0 (for ΔT<0\Delta_{T}<0, obviously, ν=4\nu=-4), thus QAH phase has a zero-field quantized charge Hall conductivity. In the QSH phase with Δ0\Delta\neq 0 and U=UT=ΔT=0U=U_{T}=\Delta_{T}=0, two spin components have opposite Hall conductivity, hence zero charge Hall conductivity. On the other hand, in this phase a spin Hall conductivity σxy(s=+)σxy(s=)\sigma_{xy}(s=+)-\sigma_{xy}(s=-) is nonzero and quantized. For ΔT=0\Delta_{T}=0 and taking without the loss of generality all other gaps positive, we obtain ν=2\nu=-2 if the following conditions are satisfied

U+UT>Δ>|UUT|,U+Δ>UT>|UΔ|\begin{split}&U+U_{T}>\Delta>|U-U_{T}|,\\ &U+{\Delta}>U_{T}>|U-{\Delta}|\end{split} (21)

[ν=2\nu=2 is obtained if we invert the signs of all three gaps and replace the gap values by their absolute values]. The second inequality in (21) arises as a consequence of the symmetry σxy(Ω)\sigma_{xy}(\Omega) under the interchange UTΔU_{T}\leftrightarrow{\Delta}.

In Fig. 3 we plotted the real part of frequency dependent Hall conductivity at zero temperature and scattering rate 2Γ=5meV2\Gamma={\text{\unboldmath$\mathrm{5}$}}\,\text{\unboldmath$\mathrm{meV}$}. The scattering rate Γ\Gamma is introduced by replacing i0i0 in Eq.(18) by 2iΓ2i\Gamma. In Fig. 3 two different cases for time-reversal breaking gaps are presented: 1) Long dashed (red) line is for a finite QAH gap ΔT=5mev\Delta_{T}={\text{\unboldmath$\mathrm{5}$}}\,\text{\unboldmath$\mathrm{mev}$}, all the other gaps are zero, U=UT=Δ=0U=U_{T}=\Delta=0, and 2) For solid (blue) line the gaps are taken ΔT=0\Delta_{T}=0, U=5mevU={\text{\unboldmath$\mathrm{5}$}}\,\text{\unboldmath$\mathrm{mev}$}, UT=4mev,Δ=1.5mevU_{T}={\text{\unboldmath$\mathrm{4}$}}\,\text{\unboldmath$\mathrm{mev}$},\Delta={\text{\unboldmath$\mathrm{1{.}5}$}}\,\text{\unboldmath$\mathrm{mev}$}. Since the two-band model is valid for Ωγ1/40.1eV\Omega\leq\gamma_{1}/4\sim{\text{\unboldmath$\mathrm{0{.}1}$}}\,\text{\unboldmath$\mathrm{eV}$}, only this range of energies is shown in the figure.

Refer to caption
Figure 3: (Color online) The real part of the optical Hall conductivity σxy(Ω)\sigma_{xy}(\Omega) in units of e2/he^{2}/h versus the photon energy Ω\Omega in eV for T=μ=0T=\mu=0, the scattering rate 2Γ=5meV2\Gamma={\text{\unboldmath$\mathrm{5}$}}\,\text{\unboldmath$\mathrm{meV}$}. The long dashed (red) line is for the QAH gap ΔT=5mev\Delta_{T}={\text{\unboldmath$\mathrm{5}$}}\,\text{\unboldmath$\mathrm{mev}$}, the other gaps are zero, U=UT=Δ=0U=U_{T}=\Delta=0. The solid line is for ΔT=0\Delta_{T}=0, the layer asymmetry gap U=5mevU={\text{\unboldmath$\mathrm{5}$}}\,\text{\unboldmath$\mathrm{mev}$}, the LAF gap UT=4mevU_{T}={\text{\unboldmath$\mathrm{4}$}}\,\text{\unboldmath$\mathrm{mev}$}, and the QSH gap Δ=1.5mev\Delta={\text{\unboldmath$\mathrm{1{.}5}$}}\,\text{\unboldmath$\mathrm{mev}$}.

These two types of time-reversal symmetry breaking gaps in bilayer graphene are expected to manifest themselves through a nonzero dc Hall response in the absence of a magnetic field. At finite frequencies, the behavior of the Hall conductivities differs essentially for two types of gaps: the curve for nonzero gap Δ\Delta crosses zero, while the curve for ΔT0\Delta_{T}\neq 0 does not. The crossing takes place in infrared range of frequencies, while at near-infrared and optical frequencies, Ωγ1/4|Δξs|\Omega\sim\gamma_{1}/4\gg|\Delta_{\xi s}|, the Hall conductivity is small and of order Reσxyξ,sΔξs|Δξs|/Ω2{\rm Re}\sigma_{xy}\sim\sum_{\xi,s}\Delta_{\xi s}|\Delta_{\xi s}|/\Omega^{2} [see, Eq. (18)]. Nevertheless, it is possible to observe such gaps in a Hall response at optical frequencies as was suggested in Ref. 48. The point is that the Hall conductivity at optical frequencies is dominated by transitions to the high-energy bands and can be manifested in the polar Kerr or Faraday rotation. However, to make reliable calculations, it is necessary to move up to the four-band model. We study the optical Hall conductivity in the four-band model in Sec. IV.

IV Optical Hall conductivity in the four-component model for zero magnetic field

In this section, we will calculate and analyze the optical Hall conductivity for bilayer graphene at the neutral point, i.e. μ=0\mu=0 is set from the beginning. It was shown Ref. 48 that if ΔT0\Delta_{T}\neq 0, the ac Hall conductivity, σxy(Ω)\sigma_{xy}(\Omega) exhibits a resonant enhancement at Ω=γ1\Omega=\gamma_{1} which corresponds to the optical frequencies due to transitions from the low-energy bands to the high-energy bands. These optical interband transitions were effectively introduced into the two-band model[48] using projector operators.

Here, instead, we use the full four-band model (1) and obtain an exact expression for optical Hall conductivity valid in a wide range of the photon energies. This enables us to investigate how behavior of σxy\sigma_{xy} is affected by the other types of the gaps both in the infrared and optical ranges of frequencies.

In the four-band model, the GF for quasiparticles at fixed spin and valley equals

G(ω,𝐩)=(ωCLOSEOPENH)1=1(ω2E12(𝐩))(ω2E22(𝐩))(A1A2A3A4),\begin{split}G(\omega,\mathbf{p})=(\omega&-H)^{-1}=\\ \frac{1}{(\omega^{2}-E^{2}_{1}(\mathbf{p}))(\omega^{2}-E^{2}_{2}(\mathbf{p}))}&\left(\begin{array}[]{cc}A_{1}&A_{2}\\ A_{3}&A_{4}\end{array}\right)\,,\end{split} (22)

where

E1,22(𝐩)=γ12+Δξs22+vF2𝐩2±(γ12Δξs2)24+vF2𝐩2(γ12+Δξs2),\begin{split}E^{2}_{1,2}(\mathbf{p})&=\frac{\gamma_{1}^{2}+\Delta_{\xi s}^{2}}{2}+v_{F}^{2}\mathbf{p}^{2}\\ &\pm\sqrt{\frac{(\gamma_{1}^{2}-\Delta_{\xi s}^{2})^{2}}{4}+v_{F}^{2}\mathbf{p}^{2}(\gamma^{2}_{1}+\Delta_{\xi s}^{2})},\end{split} (23)

and the block matrices are

A1=((ω+ξΔξs)(ω2γ12)ωvF2𝐩𝟐vF2γ1(pxipy)2vF2γ1(px+ipy)2(ωξΔξs)(ω2γ12)ωvF2𝐩𝟐),A2=ξ(vFγ1(ω+ξΔξs)(pxipy)vF[ω(ω+ξΔξs)vF2𝐩2](pxipy)vF[ω(ωξΔξs)vF2𝐩2](px+ipy)vFγ1(ωξΔξs)(px+ipy)),A3=ξ(vFγ1(ω+ξΔξs)(px+ipy)vF[ω(ωξΔξs)vF2𝐩2](pxipy)vF[ω(ω+ξΔξs)vF2𝐩2](px+ipy)vFγ1(ωξΔξs)(pxipy),),A4=((ω+ξΔξ)(ω(ωξΔξs)vF2𝐩𝟐)γ1(ω2Δξs2)γ1(ω2Δξs2)(ωξΔξs)(ω(ω+ξΔξs)vF2𝐩𝟐)).\begin{split}&A_{1}=\left(\begin{array}[]{cc}(\omega+\xi\Delta_{\xi s})(\omega^{2}-\gamma_{1}^{2})-\omega v^{2}_{F}\mathbf{p^{2}}&v^{2}_{F}\gamma_{1}(p_{x}-ip_{y})^{2}\\ v^{2}_{F}\gamma_{1}(p_{x}+ip_{y})^{2}&(\omega-\xi\Delta_{\xi s})(\omega^{2}-\gamma_{1}^{2})-\omega v^{2}_{F}\mathbf{p^{2}}\end{array}\right),\\ &A_{2}=\xi\left(\begin{array}[]{cc}v_{F}\gamma_{1}(\omega+\xi\Delta_{\xi s})(p_{x}-ip_{y})&v_{F}[\omega(\omega+\xi\Delta_{\xi s})-v^{2}_{F}\mathbf{p}^{2}](p_{x}-ip_{y})\\ v_{F}\,[\omega(\omega-\xi\Delta_{\xi s})-v^{2}_{F}\mathbf{p}^{2}](p_{x}+ip_{y})&v_{F}\gamma_{1}(\omega-\xi\Delta_{\xi s})(p_{x}+ip_{y})\end{array}\right),\\ &A_{3}=\xi\left(\begin{array}[]{cc}v_{F}\gamma_{1}(\omega+\xi\Delta_{\xi s})(p_{x}+ip_{y})&v_{F}[\omega(\omega-\xi\Delta_{\xi s})-v^{2}_{F}\mathbf{p}^{2}](p_{x}-ip_{y})\\ v_{F}[\omega(\omega+\xi\Delta_{\xi s})-v^{2}_{F}\mathbf{p}^{2}](p_{x}+ip_{y})&v_{F}\gamma_{1}(\omega-\xi\Delta_{\xi s})(p_{x}-ip_{y}),\end{array}\right),\\ &A_{4}=\left(\begin{array}[]{cc}(\omega+\xi\Delta_{\xi})(\omega(\omega-\xi\Delta_{\xi s})-v^{2}_{F}\mathbf{p^{2}})&\gamma_{1}(\omega^{2}-\Delta_{\xi s}^{2})\\ \gamma_{1}(\omega^{2}-\Delta_{\xi s}^{2})&(\omega-\xi\Delta_{\xi s})(\omega(\omega+\xi\Delta_{\xi s})-v^{2}_{F}\mathbf{p^{2}})\end{array}\right).\end{split} (24)

For |Δξs|vFpγ1|\Delta_{\xi s}|\ll v_{F}p\ll\gamma_{1}, we find for positive energies,

E1(𝐩)γ1+vF2𝐩2γ1,E2(𝐩)|Δξs|2+vF4𝐩4γ12,\displaystyle E_{1}(\mathbf{p})\simeq\gamma_{1}+\frac{v_{F}^{2}\mathbf{p}^{2}}{\gamma_{1}},\quad E_{2}(\mathbf{p})\simeq\sqrt{|\Delta_{\xi s}|^{2}+\frac{v_{F}^{4}\mathbf{p}^{4}}{\gamma_{1}^{2}}}\,, (25)

i.e., E1(𝐩)E_{1}(\mathbf{p}) and E2(𝐩)E_{2}(\mathbf{p}) describe the positive energy branches of the high and low energy bands, respectively (the negative energy branches of these bands are obtained multiplying the above expressions by 1-1).

According to the Kubo formula, the tensor of conductivities is given by Eq. (4), where at zero temperature

ΠijR(Ω+i0)=idωd2p(2π)3tr[jiG(ω,𝐩)jjG(ωΩ,𝐩)],\Pi_{ij}^{R}(\Omega+i0)=i\int\frac{d\omega d^{2}p}{(2\pi)^{3}}{\rm tr}\left[j_{i}G(\omega,{\mathbf{p}})j_{j}G(\omega-\Omega,{\mathbf{p}})\right]\,, (26)

and the trace includes the summation over spin and valley degrees of freedom. Here, the current density 𝐣=eH/𝐩\mathbf{j}=e\partial H/\partial\mathbf{p}, or in components,

jx=eξvF(0001001001001000),jy=eξvF(000i00i00i00i000).j_{x}=e\xi v_{F}\left(\begin{array}[]{cccc}0&0&0&1\\ 0&0&1&0\\ 0&1&0&0\\ 1&0&0&0\end{array}\right),\quad j_{y}=e\xi v_{F}\left(\begin{array}[]{cccc}0&0&0&-i\\ 0&0&i&0\\ 0&-i&0&0\\ i&0&0&0\end{array}\right). (27)

Using Eq. (26) and taking the trace, we get

ΠxyR(Ω)=2e2vF2Ω2ξ=±,s=±ξΔξsdωd2p(2π)3N(ω,𝐩)D(ω,𝐩),\Pi_{xy}^{R}(\Omega)=-\frac{2e^{2}v_{F}^{2}\Omega}{\hbar^{2}}\sum\limits_{\xi=\pm,s=\pm}\hskip-5.69054pt\xi\Delta_{\xi s}\int\frac{d\omega d^{2}p}{(2\pi)^{3}}\frac{N(\omega,\mathbf{p})}{D(\omega,\mathbf{p})}, (28)

where the numerator and denominator are, respectively,

N(ω,𝐩)=vF4𝐩4+vF2𝐩2(4γ12ω2(ωΩ)2)+ω2(ωΩ)2+Δξs2ω(ωΩ)+γ12(Δξs23ω(ωΩ)Ω2),D(ω,𝐩)=[ω2E12(𝐩)][ω2E22(𝐩)]×[(ωΩ)2E12(𝐩)][(ωΩ)2E22(𝐩)].\begin{split}{N(\omega,\mathbf{p})}&=v_{F}^{4}\mathbf{p}^{4}+v_{F}^{2}\mathbf{p}^{2}\left(4\gamma_{1}^{2}-\omega^{2}-(\omega-\Omega)^{2}\right)\\ &+\omega^{2}(\omega-\Omega)^{2}+\Delta_{\xi s}^{2}\omega(\omega-\Omega)\\ &+\gamma_{1}^{2}\left(\Delta_{\xi s}^{2}-3\omega(\omega-\Omega)-\Omega^{2}\right),\\ D(\omega,\mathbf{p})&=[\omega^{2}-E^{2}_{1}(\mathbf{p})][\omega^{2}-E^{2}_{2}(\mathbf{p})]\\ &\times[(\omega-\Omega)^{2}-E^{2}_{1}(\mathbf{p})][(\omega-\Omega)^{2}-E^{2}_{2}(\mathbf{p})]\,.\end{split} (29)

Eq. (28) implies that the function ΠxyR(Ω)\Pi_{xy}^{R}(\Omega) is an odd function of the energy: ΠxyR(Ω)=ΠxyR(Ω)\Pi_{xy}^{R}(-\Omega)=-\Pi_{xy}^{R}(\Omega). On the other hand, from Eq. (26) we obtain that ΠyxR(Ω)=ΠxyR(Ω)\Pi_{yx}^{R}(\Omega)=\Pi_{xy}^{R}(-\Omega), therefore, for the Hall conductivity we have the relationship σyx(Ω)=σxy(Ω)\sigma_{yx}(\Omega)=-\sigma_{xy}(\Omega).

The integration over ω\omega and the angle in Eq. (28) can be done straightforwardly and we obtain the final general expression for the optical Hall conductivity in the four-component model of bilayer graphene,

σxy(Ω)=e22hξ=±,s=±ξΔξs0dx{2γ12x(E12E22)2[1E12(12E1Ω2iΓ+12E1+Ω+2iΓ)+1E22(12E2Ω2iΓ+12E2+Ω+2iΓ)]+4γ14γ12(3E12+2E1E2+3E224Δξs2)+(E12E22)2(E1E2)2Δξs22E1E2(E12E22)2×(1E1+E2Ω2iΓ+1E1+E2+Ω+2iΓ)}.\begin{split}\sigma_{xy}(\Omega)&=\frac{e^{2}}{2h}\sum\limits_{\xi=\pm,s=\pm}\xi\Delta_{\xi s}\int\limits_{0}^{\infty}dx\left\{\frac{2\gamma_{1}^{2}x}{(E_{1}^{2}-E_{2}^{2})^{2}}\left[\frac{1}{E_{1}^{2}}\left(\frac{1}{2E_{1}-\Omega-2i\Gamma}+\frac{1}{2E_{1}+\Omega+2i\Gamma}\right)\right.\right.\\ &+\left.\left.\frac{1}{E_{2}^{2}}\left(\frac{1}{2E_{2}-\Omega-2i\Gamma}+\frac{1}{2E_{2}+\Omega+2i\Gamma}\right)\right]\right.\\ &+\left.\frac{4\gamma_{1}^{4}-\gamma_{1}^{2}(3E_{1}^{2}+2E_{1}E_{2}+3E_{2}^{2}-4\Delta_{\xi s}^{2})+(E_{1}^{2}-E_{2}^{2})^{2}-(E_{1}-E_{2})^{2}\Delta_{\xi s}^{2}}{2E_{1}E_{2}(E_{1}^{2}-E_{2}^{2})^{2}}\right.\\ &\times\left.\left(\frac{1}{E_{1}+E_{2}-\Omega-2i\Gamma}+\frac{1}{E_{1}+E_{2}+\Omega+2i\Gamma}\right)\right\}.\end{split} (30)

Here as before we introduced a phenomenological impurity scattering rate Γ\Gamma. In this form, the physical meaning of three terms in Eqs. (30) is quite transparent. Clearly, the first term in the square brackets describes transitions between the negative and positive branches of the high energy band E1(𝐩)E_{1}(\mathbf{p}), the second term is related to transitions between the negative and positive branches of the low energy band E2(𝐩)E_{2}(\mathbf{p}), and the last term in curly brackets describes interband transitions.

The dc Hall conductivity in clean sample is obtained from Eq. (30) setting Γ=0\Gamma=0 and Ω=0\Omega=0. It can be rewritten in terms of the dimensionless variables y=x/γ12y=x/\gamma^{2}_{1}, z=ΔT/γ1z=\Delta_{T}/\gamma_{1} (2y=M12+M221z22y=M_{1}^{2}+M_{2}^{2}-1-z^{2}) and for the time-reversal symmetry breaking gap, Δξs=ξΔT\Delta_{\xi s}=\xi\Delta_{T}, it acquires the form:

σxy=4e2zh0dy[1+M1M2M1M2(M1+M2)3+y3M1M2+M12+M22+M12M22M13M23(M1+M2)3],\begin{split}\sigma_{xy}&=\frac{4e^{2}z}{h}\int\limits_{0}^{\infty}dy\left[\frac{1+M_{1}M_{2}}{M_{1}M_{2}(M_{1}+M_{2})^{3}}\right.\\ &+\left.y\frac{3M_{1}M_{2}+M_{1}^{2}+M_{2}^{2}+M_{1}^{2}M_{2}^{2}}{M_{1}^{3}M_{2}^{3}(M_{1}+M_{2})^{3}}\right],\end{split} (31)

where

M1,2(y,z)=1+z22+y±(1z2)24+y(1+z2).\displaystyle\hskip-2.84526ptM_{1,2}(y,z)\hskip-2.84526pt=\hskip-2.84526pt\sqrt{\frac{1+z^{2}}{2}+y\pm\sqrt{\frac{(1-z^{2})^{2}}{4}+y(1+z^{2})}}. (32)

To study the case ΔTγ1\Delta_{T}\ll\gamma_{1} we change yzyy\rightarrow zy and then take the limit z0z\to 0. We find that σxy=4e2/h\sigma_{xy}=4e^{2}/h. The numerical study of Eq.(31) shows that σxy\sigma_{xy} does not depend of zz and always equals 4e2/h4e^{2}/h. Actually, this is a reflection of the fact that the dc Hall conductivity σxy\sigma_{xy} can be written in terms of the topological Pontryagin index,[58]

𝒞=124π2ϵμνλdωd2ptr[GμG1GνG1GλG1],{\cal C}=\frac{1}{24\pi^{2}}\epsilon_{\mu\nu\lambda}\int d\omega d^{2}p\,{\rm tr}\left[G\partial_{\mu}G^{-1}G\partial_{\nu}G^{-1}G\partial_{\lambda}G^{-1}\right], (33)

where μG1=G1/pμ\partial_{\mu}G^{-1}={\partial G^{-1}}/\partial p_{\mu}, pμ=(ω,px,py)p_{\mu}=(\omega,p_{x},p_{y}), ϵμνλ\epsilon_{\mu\nu\lambda} is the antisymmetric tensor, and G=(iωH)1G=(i\omega-H)^{-1} is the Green’s function on the imaginary frequency axis.[59]

In the case of a more general gap Δξs=U+ξΔT\Delta_{\xi s}=U+\xi\Delta_{T} the behavior of the dc Hall conductivity is different: it is zero for ΔT<U\Delta_{T}<U and σxy=4e2/h\sigma_{xy}=4e^{2}/h for ΔT>U\Delta_{T}>U.

We also provide the analytic expression for the complex diagonal optical conductivity

σxx(Ω)=e2ihΩξ=±0dx(E12E22)2{2γ12x[E12+Δξ2E12(12E1Ω2iΓ+12E1+Ω+2iΓ12E12iΓ12E1+2iΓ)+E22+Δξ2E22(12E2Ω2iΓ+12E2+Ω+2iΓ12E22iΓ12E2+2iΓ)]+12E1E2(1E1+E2Ω2iΓ+CLOSEOPEN1E1+E2+Ω+2iΓ1E1+E22iΓ1E1+E2+2iΓ)×[2E1E2(E12E22)24γ12E1E2(E12+E22γ12)+Δξ2[(E12+E22)(E1E2)25γ12(E12+E22)+6γ12E1E2+4γ12(γ12+Δξ2)]Δξ4(E1E2)2]}.\begin{split}\sigma_{xx}(\Omega)=\frac{e^{2}}{ih\Omega}\sum\limits_{\xi=\pm}\int\limits_{0}^{\infty}\frac{dx}{(E_{1}^{2}-E_{2}^{2})^{2}}\Bigg\{2\gamma_{1}^{2}x&\left[\frac{E_{1}^{2}+\Delta_{\xi}^{2}}{E_{1}^{2}}\left(\frac{1}{2E_{1}-\Omega-2i\Gamma}+\frac{1}{2E_{1}+\Omega+2i\Gamma}-\frac{1}{2E_{1}-2i\Gamma}-\frac{1}{2E_{1}+2i\Gamma}\right)\right.\\ +&\left.\frac{E_{2}^{2}+\Delta_{\xi}^{2}}{E_{2}^{2}}\left(\frac{1}{2E_{2}-\Omega-2i\Gamma}+\frac{1}{2E_{2}+\Omega+2i\Gamma}-\frac{1}{2E_{2}-2i\Gamma}-\frac{1}{2E_{2}+2i\Gamma}\right)\right]\\ +\frac{1}{2E_{1}E_{2}}\left(\frac{1}{E_{1}+E_{2}-\Omega-2i\Gamma}\right.+&\left.\frac{1}{E_{1}+E_{2}+\Omega+2i\Gamma}-\frac{1}{E_{1}+E_{2}-2i\Gamma}-\frac{1}{E_{1}+E_{2}+2i\Gamma}\right)\\ \times\left[2E_{1}E_{2}(E_{1}^{2}-E_{2}^{2})^{2}-\right.&4\gamma_{1}^{2}E_{1}E_{2}(E_{1}^{2}+E_{2}^{2}-\gamma_{1}^{2})\\ +\Delta_{\xi}^{2}\left[(E_{1}^{2}+E_{2}^{2})(E_{1}-E_{2})^{2}\right.&-5\gamma_{1}^{2}(E_{1}^{2}+E_{2}^{2})+6\gamma_{1}^{2}E_{1}E_{2}+4\gamma_{1}^{2}(\gamma_{1}^{2}+\Delta_{\xi}^{2})]\left.-\Delta_{\xi}^{4}(E_{1}-E_{2})^{2}\right]\Bigg\}.\end{split} (34)

Equation (34) is derived from the four-band model similarly to the optical Hall conductivity. We will use this in Sec. V for the analysis of Kerr and Faraday rotations.

IV.1 Optical Hall conductivity for the QAH state

We immediately conclude from Eq. (30) that for the QVH and LAF states, σxy(Ω)=0\sigma_{xy}(\Omega)=0. For the QSH state, the optical Hall conductivity is also zero due to the summation over spin in Eq. (30). However, it is not equal to zero for the QAH state (Δξs=ξΔT\Delta_{\xi s}=\xi\Delta_{T}). In Fig. 4 the dependence of Reσxy(Ω)\mbox{Re}\sigma_{xy}(\Omega) is plotted.

Refer to caption
Figure 4: (Color online) The real part of the optical Hall conductivity σxy(Ω)\sigma_{xy}(\Omega) in units of e2/he^{2}/h as a function of photon energy Ω\Omega. The thick lines are computed using Eq. (30) and thin lines using Eq. (12) of Ref. 48. The long-dashed and solid curves are for the QAH gap ΔT=1meV\Delta_{T}={\text{\unboldmath$\mathrm{1}$}}\,\text{\unboldmath$\mathrm{meV}$} and ΔT=0.5meV\Delta_{T}={\text{\unboldmath$\mathrm{0{.}5}$}}\,\text{\unboldmath$\mathrm{meV}$}, respectively.

The thick curves are computed using Eq. (30) obtained in the four-band model. For comparison with Ref. 48 we took the same values for the parameters γ1=0.4eV\gamma_{1}={\text{\unboldmath$\mathrm{0{.}4}$}}\,\text{\unboldmath$\mathrm{eV}$}, 2Γ=0.05eV2\Gamma={\text{\unboldmath$\mathrm{0{.}05}$}}\,\text{\unboldmath$\mathrm{eV}$} and plotted thin curves using the approximate expression (12) derived in Ref. 48. We also considered the two values of the gap: ΔT=1meV\Delta_{T}={\text{\unboldmath$\mathrm{1}$}}\,\text{\unboldmath$\mathrm{meV}$} (long-dashed (red) curve) and ΔT=0.5meV\Delta_{T}={\text{\unboldmath$\mathrm{0{.}5}$}}\,\text{\unboldmath$\mathrm{meV}$} (solid (blue) curve). We observe that the approximate expression is in agreement with the four-band model in the vicinity of Ω=γ1\Omega=\gamma_{1} and for higher energies. For low-energies the behavior of the Hall conductivity is correctly described only by the four-band model.

In addition to the QAH gap ΔT\Delta_{T}, the gating induces a finite time-reversal invariant gap U0U_{0}. Our multigap expression (30) for the optical Hall conductivity also allows to study this case if one takes a gap Δξs=U+ξΔT\Delta_{\xi s}=U+\xi\Delta_{T}. The results of the computation are presented in Fig. 5.

Refer to caption
Figure 5: (Color online) The real part of the optical Hall conductivity σxy(Ω)\sigma_{xy}(\Omega) in units of e2/he^{2}/h as a function of photon energy Ω\Omega. The QAH gap ΔT=1meV\Delta_{T}={\text{\unboldmath$\mathrm{1}$}}\,\text{\unboldmath$\mathrm{meV}$}. The long dashed curve is for the layer asymmetry gap U=0.5meVU={\text{\unboldmath$\mathrm{0{.}5}$}}\,\text{\unboldmath$\mathrm{meV}$}, the solid curve is for U=5meVU={\text{\unboldmath$\mathrm{5}$}}\,\text{\unboldmath$\mathrm{meV}$}, and the dash-dotted curve is for U=50meVU={\text{\unboldmath$\mathrm{50}$}}\,\text{\unboldmath$\mathrm{meV}$}.

The QAH gap ΔT\Delta_{T} is set to be 1\mathrm{1}meV\mathrm{meV} for all three curves, while the value of the layer asymmetry gap U0U_{0} is changed. The long dashed (red) curve is for U=U0=0.5meVU=U_{0}={\text{\unboldmath$\mathrm{0{.}5}$}}\,\text{\unboldmath$\mathrm{meV}$}, the solid (blue) curve is for U=U0=5meVU=U_{0}={\text{\unboldmath$\mathrm{5}$}}\,\text{\unboldmath$\mathrm{meV}$}, and the dash-dotted (black) curve is for U=U0=50meVU=U_{0}={\text{\unboldmath$\mathrm{50}$}}\,\text{\unboldmath$\mathrm{meV}$}. It is seen that in general the optical Hall conductivity is sensitive to the external electric field EE_{\perp} which decreases the value of the jump of σxy(Ω)\sigma_{xy}(\Omega) near Ω=γ1\Omega=\gamma_{1} and shifts its position to the higher energies.

IV.2 The optical Hall conductivity for ΔT=0\Delta_{T}=0 and superposition of three gaps

The Hall conductivity Reσxy(Ω){\rm Re}\,\sigma_{xy}(\Omega) is nonzero if the time-reversal symmetry is broken. This however is a necessary, but not sufficient condition. Indeed, although the LAF state gap UTU_{T} breaks time-reversal symmetry, it follows from Eq. (30) that Reσxy(Ω)=0{\rm Re}\,\sigma_{xy}(\Omega)=0 in this state. Then it seems that the Hall conductivity could be nonzero only when the QAH gap ΔT0\Delta_{T}\neq 0. However, the analysis performed in Sec. III.4 shows that the dc Hall conductivity might still be nonzero even if ΔT=0\Delta_{T}=0. According to Eq. (21), this happens if three other gaps UTU_{T}, UU, and Δ\Delta are not zero and satisfy certain inequalities.

As we mentioned in Sec. II, the two states, LAF (Δξs=sUT\Delta_{\xi s}=sU_{T}) and QSH (OPENΔξs=ξsΔ)\Delta_{\xi s}=\xi s\Delta), are the most likely candidates for the gapped ground state of bilayer graphene at the neutral point in the absence of external fields. The gating of bilayer induces the layer asymmetry gap U0U_{0}. In the case U00U_{0}\neq 0, the analysis of the mean-field gap equations shows that the QSH state transforms into the superposition of the QSH gap Δ\Delta and the layer asymmetry gap UU, while the LAF state into the the superposition of the LAF gap UTU_{T} and UU, respectively. Furthermore, in the QSH state with two gaps a third LAF UTU_{T} gap may also open in the presence of magnetic impurities. Similarly, there may be a mechanism to generate a QSH gap, Δ\Delta for the LAF state with two gaps. Since these additional third gaps naturally should be much smaller than the other two, in this subsection we will consider the optical Hall conductivity for the two cases of superpositions of three gaps. In the first case, UTU_{T} is much smaller than Δ\Delta, UU and, in the second, Δ\Delta is much smaller than UTU_{T}, UU. However, because of the symmetry of the Hall conductivity under the interchange UTΔU_{T}\leftrightarrow\Delta, the second case is in fact equivalent to the first one. In Fig. 6 we plotted the dependence Reσxy(Ω){\rm Re}\,\sigma_{xy}(\Omega) for fixed gaps UT=1meV,Δ=5meVU_{T}={\text{\unboldmath$\mathrm{1}$}}\,\text{\unboldmath$\mathrm{meV}$},\Delta={\text{\unboldmath$\mathrm{5}$}}\,\text{\unboldmath$\mathrm{meV}$} and for three different values of the layer asymmetry gap U=5meV,10meV,20meVU={\text{\unboldmath$\mathrm{5}$}}\,\text{\unboldmath$\mathrm{meV}$},{\text{\unboldmath$\mathrm{10}$}}\,\text{\unboldmath$\mathrm{meV}$},{\text{\unboldmath$\mathrm{20}$}}\,\text{\unboldmath$\mathrm{meV}$} and Γ=25meV\Gamma={\text{\unboldmath$\mathrm{25}$}}\,\text{\unboldmath$\mathrm{meV}$}.

Refer to caption
Figure 6: (Color online) The real part of the optical Hall conductivity σxy(Ω)\sigma_{xy}(\Omega) in units of e2/he^{2}/h as a function of photon energy Ω\Omega. The QAH gap ΔT=0\Delta_{T}=0. The LAF gap UT=1meVU_{T}={\text{\unboldmath$\mathrm{1}$}}\,\text{\unboldmath$\mathrm{meV}$}, and the QSH gap Δ=5meV\Delta={\text{\unboldmath$\mathrm{5}$}}\,\text{\unboldmath$\mathrm{meV}$}. The long dashed (red) curve is for the layer asymmetry gap U=5meVU={\text{\unboldmath$\mathrm{5}$}}\,\text{\unboldmath$\mathrm{meV}$}, the solid (blue) curve is for U=10meVU={\text{\unboldmath$\mathrm{10}$}}\,\text{\unboldmath$\mathrm{meV}$}, and the dash-dotted (black) curve is for U=20meVU={\text{\unboldmath$\mathrm{20}$}}\,\text{\unboldmath$\mathrm{meV}$}.

We observe that the behavior of Reσxy(Ω)\mbox{Re}\sigma_{xy}(\Omega) becomes more rich than in pure QAH state and in addition to the jump at Ω=γ1\Omega=\gamma_{1} a new kink at lower energy develops. For smaller values of U=510meVU={\text{\unboldmath$\mathrm{5-10}$}}\,\text{\unboldmath$\mathrm{meV}$} this kink results in the two additional zeros on the function σxy(Ω)\sigma_{xy}(\Omega).

This shows that if the Faraday or Kerr rotation is observed in zero magnetic field, not only can one state that some time-reversal symmetry state is present, but also shed a light on the specific nature of this state, by studying the dependence σxy(Ω)\sigma_{xy}(\Omega). To plot the figures in this section, we used a high value of the scattering rate Γ\Gamma which shows that the observed features are rather robust with respect to the disorder. This allows us to conclude that these effects can be observed experimentally even if the values of the gaps are smaller than Γ\Gamma.

V Relation between the optical Hall conductivity and the Faraday/Kerr rotation angles

Spontaneously broken time-reversal symmetry in bilayer graphene should be observable via optical polarization rotation when light is transmitted through the sample (Faraday effect) or reflected by it (Kerr effect).[48] If graphene is deposited on a substrate, the rotation angles depend not only on the optical conductivity of graphene, but also on the substrate properties. In this section, we provide formulas and calculate Faraday and Kerr rotation spectra for three practically relevant situations shown in the inset of Fig. 7, namely, (i) for free-standing graphene, (ii) for graphene on a thick substrate with a refractive index n=1.5n=1.5, (which closely matches the properties of SiO2 and boron nitride in the spectral range of interest), and (iii) for graphene on a dielectric layer with n=1.5n=1.5 and a thickness of d=300nmd={\text{\unboldmath$\mathrm{300}$}}\,\text{\unboldmath$\mathrm{nm}$} on top of a thick layer with ns=3.5n_{s}=3.5 (which corresponds to the most commonly used SiO2/Si substrates).

If graphene is deposited on a thick substrate with refractive index nn, the experimental Kerr and Faraday rotation angles are defined, respectively, by the relations:

θK=arg(r)arg(r+)2,\theta_{K}=\frac{\mbox{arg}(r_{-})-\mbox{arg}(r_{+})}{2}, (35)
θF=arg(t)arg(t+)2,\theta_{F}=\frac{\mbox{arg}(t_{-})-\mbox{arg}(t_{+})}{2}, (36)

where

r±=1nZ0σ±1+n+Z0σ±,t±=21+n+Z0σ±\displaystyle r_{\pm}=\frac{1-n-Z_{0}\sigma_{\pm}}{1+n+Z_{0}\sigma_{\pm}},t_{\pm}=\frac{2}{1+n+Z_{0}\sigma_{\pm}} (37)

are the reflection and transmission coefficients at the ’vacuum-film-substrate’ interface, σ±\sigma_{\pm} is the optical conductivity for the right (’+’) and left (’-’) circularly polarized light calculated using Eqs. (34) and (30), and Z0=4π/cZ_{0}=4\pi/c is the impedance of vacuum. The case of free standing graphene is covered by the same relations if nn is set to 1.

In the limit Z0|σ±(Ω)|n1Z_{0}|\sigma_{\pm}(\Omega)|\ll n-1 the formulas (35) and (36) are greatly simplified (see also Ref.48):

θK(Ω)2Z0Reσxy(Ω)n21,\theta_{K}(\Omega)\approx-\frac{2Z_{0}\mbox{Re}\sigma_{xy}(\Omega)}{n^{2}-1}, (38)
θF(Ω)Z0Reσxy(Ω)n+1,\theta_{F}(\Omega)\approx\frac{Z_{0}\mbox{Re}\sigma_{xy}(\Omega)}{n+1}, (39)

from where it is obvious that both angles are proportional to the real part of σxy(Ω)\sigma_{xy}(\Omega). Note that the approximation (38) is not correct for the free-standing graphene.

In Fig. 7 we show the calculated Faraday and Kerr rotation spectra for free-standing graphene (the solid line) and for graphene on top of a thick substrate with n=1.5n=1.5 (the dashed line), expressed in units of the fine structure constant α\alpha. The exact relations (35) and (36) were used. As an example, we take the case, where ΔT=1\Delta_{T}=1 meV and other gaps are equal to zero (Fig. 4). One can see that the Faraday angle does not differ much in the two cases and it indeed matches the real part of the Hall conductivity. On the contrary, the Kerr rotation for the free-standing sample is about 10 times larger than for supported graphene. This does not necessarily mean, however, that the Kerr geometry is favorable to detect the gapped states in free standing graphene, since the reflection coefficient itself is proportional to α2\alpha^{2} and therefore very small.[62]

Next, we consider graphene on a double-layer substrate. In this case, Eqs. (35) and (36) are still valid, but the reflection and transmission coefficients are calculated differently:

r±=r01±+t01±r12τ2t10±1τ2r12r10±,t±=t01±τt121τ2r12r10±,\begin{split}r_{\pm}&=r_{01\pm}+\frac{t_{01\pm}r_{12}\tau^{2}t_{10\pm}}{1-\tau^{2}r_{12}r_{10\pm}},\\ t_{\pm}&=\frac{t_{01\pm}\tau t_{12}}{1-\tau^{2}r_{12}r_{10\pm}},\end{split} (40)

where

r01±=1nZ0σ±1+n+Z0σ±,t01±=21+n+Z0σ±,r10±=n1Z0σ±1+n+Z0σ±,t10±=2n1+n+Z0σ±,r12=nnsn+ns,t12=2nn+ns,τ=exp{i(Ω/c)nd}.\begin{split}r_{01\pm}&=\frac{1-n-Z_{0}\sigma_{\pm}}{1+n+Z_{0}\sigma_{\pm}},\quad t_{01\pm}=\frac{2}{1+n+Z_{0}\sigma_{\pm}},\\ r_{10\pm}&=\frac{n-1-Z_{0}\sigma_{\pm}}{1+n+Z_{0}\sigma_{\pm}},\quad t_{10\pm}=\frac{2n}{1+n+Z_{0}\sigma_{\pm}},\\ r_{12}&=\frac{n-n_{s}}{n+n_{s}},\quad t_{12}=\frac{2n}{n+n_{s}},\\ \tau&=\exp\left\{i(\Omega/c)nd\right\}.\end{split} (41)

Here, rij±r_{ij\pm} and rji±r_{ji\pm} are the reflection and transmission coefficients at the interface between media ii and jj (0, vacuum; 1 and 2, the first and the second substrate layers) and τ\tau is the transmission coefficient for the first substrate layer.

This calculation takes fully into account the Fabry-Perot interference in the 300 nm layer but not in the thick substrate. The corresponding results are shown by the short-dashed curves in Fig. 7. Due to the Fabry-Perot effect, the Faraday angle and especially the Kerr angle are no longer determined by Reσxy(Ω)\mbox{Re}\sigma_{xy}(\Omega) only. Interestingly, the Kerr angle above 0.4 eV is even inverted with respect to the case of a simple substrate.

Refer to caption
Figure 7: (Color online) The calculated Faraday and the Kerr rotation angles for different experimental geometries shown in the inset. Optical conductivity of graphene was calculated using ΔT=1\Delta_{T}=1 meV and Δ=U=UT=0\Delta=U=U_{T}=0.

VI Discussion

In this paper, we studied the influence of different kinds of gaps in bilayer graphene in the two- and four-band models on longitudinal and transverse optical conductivities paying special attention to gaps that break the time-reversal symmetry. The two-band model is valid for energies E<100meVE<100\,\mbox{meV} and the four-band model is applicable up to energies when continuum approximation is valid, i.e., for wave vectors ka1ka\ll 1 where aa is the lattice constant. The upper bound 100meV100\,\mbox{meV} in the two-band model is due to neglecting the high-energy bands. Corresponding restrictions on gaps and on transverse voltages are related to limitations of these models.

Starting from a low-energy two-band Hamiltonian, we derived a simple analytical expression (14) for the complex magneto-optical conductivity for two opposite circular polarizations of light. It is verified that for zero values of the gaps, the strengths of the absorption lines satisfy the optical spectral weight conservation. When there is a layer asymmetry gap, the corresponding absorption peak splits into two, while for the time-reversal symmetry gap, the position of the peak shifts, but it remains unsplit.

The limit of zero magnetic field was analyzed for an arbitrary carrier density in the two-band approximation. We find that the necessary (but not sufficient) condition for the optical Hall and dc Hall conductivities to remain finite is the presence of nonzero time-reversal symmetry breaking gap. In addition to the canonical time-reversal symmetry breaking QAH state considered in Ref. 48 which provides Reσxy/(e2/h)=±4Re\,\sigma_{xy}/(e^{2}/h)=\pm 4 reflecting the presence of four topologically protected edge states for the QAH ground state of bilayer graphene, we find another more sophisticated possibility of nonzero dc Hall conductivity Reσxy/(e2/h)=±2Re\,\sigma_{xy}/(e^{2}/h)=\pm 2 if time-reversal symmetry breaking LAF gap, QSH gap, and QVH gap are present and satisfy a certain inequality.

Using the full four-band model we derived analytic expressions (30) and (34) for the optical Hall and longitudinal conductivities in a neutral bilayer graphene taking into account the presence of four different gaps. We found that the optical Hall conductivity as a function of the energy of photon is strongly sensitive to the presence of different time-reversal symmetry breaking states. Meanwhile the real part of the optical conductivity for the QAH state has a unique zero (see Fig. 4), the real part of the optical conductivity for the state with a superposition of LAF, QSH, and QVH gaps may have two zeros as a function of the energy of photon. Therefore, the observation of the optical Hall conductivity in zero magnetic field is a very effective probe of the ground state of bilayer graphene.

The time-reversal symmetry breaking states are expected to be observed experimentally via optical polarization rotation either in the Faraday or Kerr effects. We analyzed a possibility of such experiments for a free standing graphene, graphene on a thick substrate and graphene on a double-layer substrate. In the last case the Faraday angle and especially the Kerr angle are no longer determined by the real part of the optical Hall conductivity only. Moreover, the sign of the Kerr angle is even inverted with respect to the case of a simple substrate.

In the this paper, we calculated optical conductivities in a very simple approximation where quasiparticle gaps were introduced into the Green’s functions phenomenologically while the vertex corrections due to Coulomb and other interactions were neglected. Below the band gap the spectrum of the system may contain Coulomb bound electron-hole pairs which would reveal themselves as poles in the vertex function, hence as resonances in the absorption spectra. The spectrum of resonances depends on a type of dynamically generated gap and experimental observation of these resonances could serve as another fingerprint for a given gapped ground state of bilayer graphene. Detailed study of such modes is beyond of the scope of this paper and is postponed for the future.

Acknowledgements.
This work was supported by the Scientific Cooperation Between Eastern Europe and Switzerland (SCOPES) programme under Grant No. IZ73Z0-128026 of the Swiss National Science Foundation (SNSF). E.V.G., V.P.G. and S.G.Sh. were supported by the European FP7 program, Grant No. SIMTECH 246937 and by the joint Ukrainian-Russian SFFR-RFBR Grant No. F40.2/108; A.B.K. was supported by the SNSF Grant No. 200020-130093. V.P.G. and S.G.Sh. also acknowledge a collaborative grant from the Swedish Institute.

Appendix A Diagonal conductivity spectral weight

The analysis of the spectral weight proved to be useful both for theoretical (see e.g. Refs. 33, 60, 39) and experimental, Ref.55, studies of graphene. Here we consider the optical spectral weight that falls between Ω=0\Omega=0 and Ω=Ωm\Omega=\Omega_{m} with Ωm\Omega_{m} a variable upper limit in the integral

W(Ωm)=0ΩmdΩReσxx(Ω)W(\Omega_{m})=\int_{0}^{\Omega_{m}}d\Omega\mbox{Re}\sigma_{xx}(\Omega) (42)

to verify that this weight is conserved irrespectively the value of the magnetic field. Setting Δξ=0\Delta_{\xi}=0 in Eq. (16) we arrive at the expression

σxx(Ω)=2e2[|μ|δ(Ω)+14θ(Ω2|μ|)],\sigma_{xx}(\Omega)=\frac{2e^{2}}{\hbar}\left[|\mu|\delta(\Omega)+\frac{1}{4}\theta\left(\Omega-2|\mu|\right)\right], (43)

which could also be derived directly from the 2×22\times 2 Hamiltonian[61] for B=0B=0. Then for Ωm>2|μ|\Omega_{m}>2|\mu|

W(Ωm)=e22ΩmW(\Omega_{m})=\frac{e^{2}}{2\hbar}\Omega_{m} (44)

which is twice as much as the spectral weight for monolayer.[33] Obviously, Eqs. (43) and (44) are applicable only in the domain of validity of the 2×22\times 2 Hamiltonian (3), e.g. for Ω<γ1\Omega<\gamma_{1}, but this is sufficient for our purposes.

In the zero gap case, Δξ=0\Delta_{\xi}=0 Eq. (14) acquires a simple form

σ±(Ω)=2e23πm2l4k=0(k+1)×λ,λ=±nF(λMk+1)nF(λMk+2)λMk+2λMk+1×iΩλMk+2±λMk+1+2iΓ.\begin{split}\sigma_{\pm}&(\Omega)=\frac{2e^{2}\hbar^{3}}{\pi m^{2}l^{4}}\sum\limits_{k=0}^{\infty}(k+1)\\ &\times\sum_{\lambda,\lambda^{\prime}=\pm}\frac{n_{F}(\lambda M_{k+1})-n_{F}(\lambda^{\prime}M_{k+2})}{\lambda^{\prime}M_{k+2}-\lambda M_{k+1}}\\ &\times\frac{i}{\Omega\mp\lambda^{\prime}M_{k+2}\pm\lambda M_{k+1}+2i\Gamma}.\end{split} (45)

Assuming for simplicity that M0<μ<M2M_{0}<\mu<M_{2} we get in the limit T0T\to 0 and Γ0\Gamma\to 0 that the diagonal optical conductivity is

Reσxx(Ω)=2e2ωc2k=0(k+1)δ(ΩMk+2Mk+1)Mk+2+Mk+1.\mbox{Re}\sigma_{xx}(\Omega)=\frac{2e^{2}}{\hbar}\omega_{c}^{2}\sum_{k=0}^{\infty}(k+1)\frac{\delta(\Omega-M_{k+2}-M_{k+1})}{M_{k+2}+M_{k+1}}. (46)

Accordingly for Δξ=0\Delta_{\xi}=0, the spectral weight equals

W(Ωm)=2e2ωc2k=0(k+1)θ(ΩMk+2Mk+1)Mk+2+Mk+1=2e2ωck=0Nk+1k+2+k,\begin{split}W(\Omega_{m})&=\frac{2e^{2}}{\hbar}\omega_{c}^{2}\sum_{k=0}^{\infty}(k+1)\frac{\theta(\Omega-M_{k+2}-M_{k+1})}{M_{k+2}+M_{k+1}}\\ &=\frac{2e^{2}}{\hbar}\omega_{c}\sum_{k=0}^{N}\frac{\sqrt{k+1}}{\sqrt{k+2}+\sqrt{k}}\,,\end{split} (47)

where the maximal NN is estimated from the condition Ωm=MN+2+MN+12ωcN\Omega_{m}=M_{N+2}+M_{N+1}\approx 2\omega_{c}N. The sum over kk in (47) can be evaluated analytically,

k=0Nk+1k+2+k=12OPEN(N+1)(N+2))N2.\sum_{k=0}^{N}\frac{\sqrt{k+1}}{\sqrt{k+2}+\sqrt{k}}=\frac{1}{2}\sqrt{(N+1)(N+2))}\approx\frac{N}{2}. (48)

Then, we again arrive at the result (44), obtained for B=0B=0 confirming the conservation of the spectral weight.

To be specific, we have considered explicitly in this section only the case M0<μ<M2M_{0}<\mu<M_{2}. For μ]MN,MN+1[\mu\in]M_{N},M_{N+1}[, N2N\geq 2, we can show that the missing spectral weight in the lines nNn\leq N is provided by the single intraband line at MN+1MNM_{N+1}-M_{N}.

Using a representation, similar to Eq. (46), for the conductivity in the limit Γ,T0\Gamma,T\to 0, but written for the case μ]MN,MN+1[\mu\in]M_{N},M_{N+1}[ under investigation, we obtain the optical spectral weight lost in units of (e2/)ωc(e^{2}/\hbar)\omega_{c}:

k=0N2(k+1)ωcMk+2+Mk+1+NωcMN+1+MN=NωcMN+1MN.\sum_{k=0}^{N-2}\frac{(k+1)\omega_{c}}{M_{k+2}+M_{k+1}}+\frac{N\omega_{c}}{M_{N+1}+M_{N}}=\frac{N\omega_{c}}{M_{N+1}-M_{N}}\,. (49)

The first term on the left hand side is the spectral weight from all lines that disappeared from k=0k=0 to N2N-2. The second term is due to the reduction in intensity by factor 1/21/2 of the line at k=N1k=N-1. The quantity on the right-hand side is the optical weight of the intraband line which has picked up all of the lost intensity. Any violation of the individual spectral weight of the lines would violate this conservation of the optical spectral weight.

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