Local Back-Gate Monolayer MoS2 Transistors with Channel Lengths Down to 50 nm and EOT ∼ 1 nm Showing Improved $I

Marc Jaikissoon Jung-Soo Ko Eric Pop Krishna C. Saraswat Local Back-Gate Monolayer MoS2 Transistors with Channel Lengths Down to 50 nm and EOT ∼ 1 nm Showing Improved $I_{\text{on}}$ using Post-Metal Anneal. 1-2 2023 DRC https://doi.org/10.1109/DRC58590.2023.10187115 conf/drc/2023 db/conf/drc/drc2023.html#JaikissoonKPS23