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Emerging spintronics applications of magnetic van der Waals heterostructures

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Abstract

Designing magnetic van der Waals (vdW) heterostructures by stacking two-dimensional (2D) magnetic materials with other 2D materials enables the investigation of 2D spintronics owing to the strong magnetic proximity effect. Spin manipulation at the vdW interface can be achieved by stacking architectures and external stimuli, such as magnetic fields, electric fields, stress, and light. Moreover, elucidating the effects of magnetic interfacial interactions and related interlayer coupling is crucial for exploring practical spintronic applications of magnetic vdW heterostructures. In this review, vdW interlayer interactions are categorized into spin–orbit coupling, spin transfer torque, and spin–charge transfer, and the magnetic vdW heterostructures are classified into three categories: magnetic material/magnetic material, magnetic material/non-magnetic material, and magnetic material/ferroelectric material heterostructures. Subsequently, related interfacial interactions in magnetic vdW heterostructures are introduced, and the spin manipulation technique is discussed. Moreover, various applications of magnetic vdW heterostructures by modulating the electron spin are explored. Finally, emerging opportunities are highlighted, and a perspective on the future development of magnetic vdW heterostructures through delicate spin manipulation is provided.

Graphical abstract

Magnetic vdW heterostructures are classified according to vdW interlayer interactions including spin-orbit coupling, spin-transfer torque, and spin-charge transfer. Various applications and perspectives of magnetic vdW heterostructures allow authors to explore novel applications through spin manipulation.

摘要

新型二维自旋电子器件的设计，可以利用二维磁性材料中层间范德华相互作用和近邻效应，通过构筑二维磁性范德华异质结来实现。进一步，二维材料的超薄特性允许研究者通过多种外部刺激手段（如磁场、电场、应力和光等）实现对范德华异质结界面处的自旋调控。阐明范德华异质结中界面相互作用及层间磁性耦合效应，对探索新型自旋电子功能器件至关重要。本综述根据多种层间耦合机制将范德华层间相互作用归类为自旋-轨道耦合、自旋转移矩和自旋-电荷转移三类，并将磁性范德华异质结分为磁性材料/磁性材料、磁性材料/非磁性材料、磁性材料/铁电材料等三种体系。随后我们系统介绍了多种利用磁性范德华异质结界面设计和层间耦合作用的自旋调控技术。进一步，探讨了利用电子自旋技术开展多类磁性范德瓦尔斯异质结在自旋电子学领域的应用研究。最后，我们展望了范德华异质结中自旋精准调控技术为未来多功能自旋电子器件的发展带来的新机遇与新方向。

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Fig. 1

Reproduced with permission from Ref. [124]. Copyright 2024, American Chemical Society. Anomalous Hall effect (AHE). Reproduced with permission from Ref. [147]. Copyright 2024, John Wiley and Sons. Spin–orbit torque (SOT). Reproduced with permission from Ref. [154]. Copyright 2024, American Chemical Society. Exchange bias (EB). Reproduced with permission from Ref. [169]. Copyright 2025, American Chemical Society. Enhanced Curie temperature (Tc). Reproduced with permission from Ref. [178]. Copyright 2024, American Chemical Society. The spintronics applications can be classified into the tunneling magnetoresistance (TMR) effect. Reproduced with permission from Ref. [183]. Copyright 2025, John Wiley and Sons. Spin filter. Reproduced with permission from Ref. [187]. Copyright 2024, AIP Publishing. Memtransistor. Reproduced with permission from Ref. [213]. Copyright 2024, John Wiley and Sons. Magnetic storage. Reproduced with permission from Ref. [218]. Copyright 2023, Springer Nature. Thermoelectric conversion. Reproduced with permission from Ref. [221]. Copyright 2022, Elsevier. Chiral light detection. Reproduced with permission from Ref. [228]. Copyright 2025, American Chemical Society

Fig. 2

Reproduced with permission from Ref. [123]. Copyright 2024, American Chemical Society. C Schematic illustration of the VSe2/WX2 heterostructure; D valley polarizations of monolayer WSe2, 1T-VSe2/WSe2, and 2H-VSe2/WSe2 heterostructures with and without magnetic field of 0.25 T at the temperature of 300 K (left) and of monolayer WS2, 1T-VSe2/WS2, and 2H-VSe2/WS2 heterostructures at the temperature of 13 K (right). Reproduced with permission from Ref. [124]. Copyright 2024, American Chemical Society

Fig. 3

Reproduced with permission from Ref. [147]. Copyright 2024, John Wiley and Sons. D Schematic illustration of the (BixSb1-x)2Te3/CrGeTe3 heterostructure; E Hall resistance of sample with x = 0.25; F comparison of the device with other systems. Reproduced with permission from Ref. [148]. Copyright 2019, American Chemical Society

Fig. 4

Reproduced with permission from Ref. [153]. Copyright 2024, John Wiley and Sons. D Schematic diagram of the Bi2Se3/ Fe3GeTe2 heterostructure. J is the current pulse injected into the device, H0 is the in-plane bias field, M is the magnetization of Fe3GeTe2 and HDL is the damping-like effective magnetic field; E measurement of Hall resistance after applying current pulses every 50 μs at T = 50 K with a fixed in-plane bias field 500 Oe; F SOT efficiency at different temperatures. The red data point represents the SOT efficiency determined from the field rotation measurements, and the black data points represent the average of the field scan measurements at different injection currents. Reproduced with permission from Ref. [154]. Copyright 2024, American Chemical Society

Fig. 5

Reproduced with permission from Ref. [168]. Copyright 2025, John Wiley and Sons. C Schematic illustration of the CrSBr/Fe3GaTe2 heterostructure; D cooling field dependence of the EB field (HEB) under positive field cooling (PFC) and negative field cooling (NFC), respectively; E temperature dependences of the HEB and the coercivity (Hc). Reproduced with permission from Ref. [169]. Copyright 2025, American Chemical Society

Fig. 6

Reproduced with permission from Ref. [177]. Copyright 2021, American Chemical Society. D Schemes of standard Hall effect measurement and three types of Fe3GaTe2-based vdW heterostructures (MoS2/Fe3GaTe2, WSe2/Fe3GaTe2 and Bi1.5Sb0.5Te1.7Se1.3/Fe3GaTe2); E summary of Tc for samples; F summary of perpendicular magnetic anisotropy constant (Ku) for samples at 300 K. Reproduced with permission from Ref. [178]. Copyright 2024, American Chemical Society

Fig. 7

Reproduced with permission from Ref. [183]. Copyright 2025, John Wiley and Sons

Fig. 8

Reproduced with permission from Ref. [186]. Copyright 2023, Royal Society of Chemistry. I The schematic diagram and external experimental configuration of the Fe3GeTe2/MoSe2/Fe3GeTe2 heterostructure; j TMR curves of the heterostructure with bias voltage at different temperatures. Reproduced with permission from Ref. [187]. Copyright 2024, AIP Publishing. K TMR ratio as a function of temperature of the Fe3GaTe2/WSe2/Fe3GaTe2 heterostructure; L TMR versus current bias at 2 and 300 K of the Fe3GaTe2/WSe2/Fe3GaTe2 heterostructure. Reproduced with permission from Ref. [188]. Copyright 2023, John Wiley and Sons

Fig. 9

Reproduced with permission from Ref. [212]. Copyright 2022, Royal Society of Chemistry. E Schematic structure of the graphene/CrI3/graphene heterostructure; F clear Landau level (LL) stripes; G schematic illustration of LLs in the magnetized graphene on CrI3. Reproduced with permission from Ref. [213]. Copyright 2024, John Wiley and Sons. H Schematic illustration of the device consists of monolayer graphene covering a few layers of CrI3 stacking on graphite flake; I bias-dependent scanning tunneling microscope (STM) image taken at Vs = 2.5 V; J the processed STM image of Vs = 0.6 V to visualize the atomic lattice of both layers; K STM image showing the Moiré pattern of the device. Reproduced with permission from Ref. [214]. Copyright 2021, Springer Nature

Fig. 10

Reproduced with permission from Ref. [217]. Copyright 2025, John Wiley and Sons. D Illustration of the graphite/CrOCl/graphite heterostructure; e 2D mapping of the tunneling current after electric and magnetic sweep. Reproduced with permission from Ref. [218]. Copyright 2023, Springer Nature

Fig. 11

Reproduced with permission from Ref. [221]. Copyright 2024, Springer Nature

Fig. 12

Reproduced with permission from Ref. [226]. Copyright 2024, American Chemical Society. C Ids–Vds curves of the MoS2/CrOCl heterostructure under dark and 532 nm illumination. Inset is the schematic diagram of the heterostructure; D polar plots of the photocurrents of the original MoS2 device and MoS2/CrOCl heterostructure as functions of the polarization angle. Reproduced with permission from Ref. [227]. Copyright 2024, John Wiley and Sons. E Schematic diagram of the graphene/CrSBr heterostructure, where the external magnetic field is applied out of plane; F saturation value and \({R}_{\text{AHE}}^{\text{sat}}\) MR (extracted at 2 T) as a function of power density. Reproduced with permission from Ref. [228]. Copyright 2025, American Chemical Society

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Data availability statement

The data that support the findings of this study are available from the corresponding author upon reasonable request.

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Acknowledgements

This work was financially supported by the National Natural Science Foundation of China (Nos. 12104050 and 62375018), the National Key Research and Development Program of China (No. 2022YFA1203900), and Beijing Institute of Technology Research Fund Program for Young Scholars.

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Authors and Affiliations

  1. Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), Centre for Quantum Physics, School of Physics, Beijing Institute of Technology, Beijing, 100081, China

    Dan Guo, Xu-Yan Rui, Shuang Du, Qing-Rong Liang & Shou-Jun Zheng

  2. Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea

    Heejun Yang

  3. Faculty of Marine Science and Technology, Beijing Institute of Technology, Zhuhai, 519088, China

    Shou-Jun Zheng

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  1. Dan Guo
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  2. Xu-Yan Rui
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  3. Shuang Du
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  4. Qing-Rong Liang
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  5. Heejun Yang
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  6. Shou-Jun Zheng
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Contributions

Dan Guo organized all the data and write the manuscript. Xu-Yan Rui, Shuang Du, and Qing-Rong Liang assisted to organize data. Shou-Jun Zheng and Heejun Yang supervised the project. All authors participated in scientific discussions and contributed on the manuscript.

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Correspondence to Shou-Jun Zheng.

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Guo, D., Rui, XY., Du, S. et al. Emerging spintronics applications of magnetic van der Waals heterostructures. Rare Met. (2025). https://doi.org/10.1007/s12598-025-03478-6

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