[HTML][HTML] Investigation of spin scattering mechanism in silicon channels of Fe/MgO/Si lateral spin valves
The temperature evolution of spin relaxation time, τ sf, in degenerate silicon (Si)-based
lateral spin valves is investigated by means of the Hanle effect measurements. τ sf at 300 K
is estimated to be 1.68±0.03 ns and monotonically increased with decreasing temperature
down to 100 K. Below 100 K, in contrast, it shows almost a constant value of ca. 5 ns. The
temperature dependence of the conductivity of the Si channel shows a similar behavior to
that of the τ sf, ie, monotonically increasing with decreasing temperature down to 100 K and …
lateral spin valves is investigated by means of the Hanle effect measurements. τ sf at 300 K
is estimated to be 1.68±0.03 ns and monotonically increased with decreasing temperature
down to 100 K. Below 100 K, in contrast, it shows almost a constant value of ca. 5 ns. The
temperature dependence of the conductivity of the Si channel shows a similar behavior to
that of the τ sf, ie, monotonically increasing with decreasing temperature down to 100 K and …