{"id":"https://openalex.org/W2106343578","doi":"https://doi.org/10.1109/tcsi.2010.2078710","title":"Dynamical Properties and Design Analysis for Nonvolatile Memristor Memories","display_name":"Dynamical Properties and Design Analysis for Nonvolatile Memristor Memories","publication_year":2010,"publication_date":"2010-10-20","ids":{"openalex":"https://openalex.org/W2106343578","doi":"https://doi.org/10.1109/tcsi.2010.2078710","mag":"2106343578"},"language":"en","primary_location":{"id":"doi:10.1109/tcsi.2010.2078710","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tcsi.2010.2078710","pdf_url":null,"source":{"id":"https://openalex.org/S116977442","display_name":"IEEE Transactions on Circuits and Systems I Regular Papers","issn_l":"1549-8328","issn":["1549-8328","1558-0806"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Circuits and Systems I: Regular Papers","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5111527948","display_name":"Yenpo Ho","orcid":null},"institutions":[{"id":"https://openalex.org/I91045830","display_name":"Texas A&M University","ror":"https://ror.org/01f5ytq51","country_code":"US","type":"education","lineage":["https://openalex.org/I91045830"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Yenpo Ho","raw_affiliation_strings":["Department of Electrical and Computer Engineering, Texas A and M University, College Station, TX, USA","Dept. of Electr. & Comput. Eng, Texas A&M Univ., College Station, TX, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, Texas A and M University, College Station, TX, USA","institution_ids":["https://openalex.org/I91045830"]},{"raw_affiliation_string":"Dept. of Electr. & Comput. Eng, Texas A&M Univ., College Station, TX, USA","institution_ids":["https://openalex.org/I91045830"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5112257719","display_name":"Garng M. Huang","orcid":null},"institutions":[{"id":"https://openalex.org/I91045830","display_name":"Texas A&M University","ror":"https://ror.org/01f5ytq51","country_code":"US","type":"education","lineage":["https://openalex.org/I91045830"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Garng M. Huang","raw_affiliation_strings":["Department of Electrical Engineering, Texas A and M University, College Station, TX, USA","Dept. of Electr Eng., Texas A&M Univ., College Station, TX, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, Texas A and M University, College Station, TX, USA","institution_ids":["https://openalex.org/I91045830"]},{"raw_affiliation_string":"Dept. of Electr Eng., Texas A&M Univ., College Station, TX, USA","institution_ids":["https://openalex.org/I91045830"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5100432782","display_name":"Peng Li","orcid":"https://orcid.org/0000-0003-3548-4589"},"institutions":[{"id":"https://openalex.org/I91045830","display_name":"Texas A&M University","ror":"https://ror.org/01f5ytq51","country_code":"US","type":"education","lineage":["https://openalex.org/I91045830"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Peng Li","raw_affiliation_strings":["Department of Electrical Engineering, Texas A and M University, College Station, TX, USA","Dept. of Electr Eng., Texas A&M Univ., College Station, TX, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, Texas A and M University, College Station, TX, USA","institution_ids":["https://openalex.org/I91045830"]},{"raw_affiliation_string":"Dept. of Electr Eng., Texas A&M Univ., College Station, TX, USA","institution_ids":["https://openalex.org/I91045830"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I91045830"],"apc_list":{"value":2645,"currency":"USD","value_usd":2645},"apc_paid":null,"fwci":11.7397,"has_fulltext":false,"cited_by_count":330,"citation_normalized_percentile":{"value":0.98790881,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":97,"max":100},"biblio":{"volume":"58","issue":"4","first_page":"724","last_page":"736"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9986000061035156,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/memristor","display_name":"Memristor","score":0.9779065847396851},{"id":"https://openalex.org/keywords/memistor","display_name":"Memistor","score":0.7933695316314697},{"id":"https://openalex.org/keywords/non-volatile-memory","display_name":"Non-volatile memory","score":0.7599530220031738},{"id":"https://openalex.org/keywords/resistive-random-access-memory","display_name":"Resistive random-access memory","score":0.7265646457672119},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.6597338318824768},{"id":"https://openalex.org/keywords/non-volatile-random-access-memory","display_name":"Non-volatile random-access memory","score":0.5430012345314026},{"id":"https://openalex.org/keywords/key","display_name":"Key (lock)","score":0.5257681012153625},{"id":"https://openalex.org/keywords/set","display_name":"Set (abstract data type)","score":0.5191203951835632},{"id":"https://openalex.org/keywords/electronic-circuit","display_name":"Electronic circuit","score":0.4838932454586029},{"id":"https://openalex.org/keywords/electrical-element","display_name":"Electrical element","score":0.4362509548664093},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.423954039812088},{"id":"https://openalex.org/keywords/noise","display_name":"Noise (video)","score":0.4145236015319824},{"id":"https://openalex.org/keywords/computer-architecture","display_name":"Computer architecture","score":0.34991857409477234},{"id":"https://openalex.org/keywords/semiconductor-memory","display_name":"Semiconductor memory","score":0.3417378067970276},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.32092979550361633},{"id":"https://openalex.org/keywords/computer-memory","display_name":"Computer memory","score":0.31703031063079834},{"id":"https://openalex.org/keywords/memory-refresh","display_name":"Memory refresh","score":0.24662691354751587},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.2264062464237213},{"id":"https://openalex.org/keywords/artificial-intelligence","display_name":"Artificial intelligence","score":0.14915844798088074},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.13396212458610535},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.07464456558227539}],"concepts":[{"id":"https://openalex.org/C150072547","wikidata":"https://www.wikidata.org/wiki/Q212923","display_name":"Memristor","level":2,"score":0.9779065847396851},{"id":"https://openalex.org/C1895703","wikidata":"https://www.wikidata.org/wiki/Q6034938","display_name":"Memistor","level":4,"score":0.7933695316314697},{"id":"https://openalex.org/C177950962","wikidata":"https://www.wikidata.org/wiki/Q10997658","display_name":"Non-volatile memory","level":2,"score":0.7599530220031738},{"id":"https://openalex.org/C182019814","wikidata":"https://www.wikidata.org/wiki/Q1143830","display_name":"Resistive random-access memory","level":3,"score":0.7265646457672119},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.6597338318824768},{"id":"https://openalex.org/C34172316","wikidata":"https://www.wikidata.org/wiki/Q499024","display_name":"Non-volatile random-access memory","level":5,"score":0.5430012345314026},{"id":"https://openalex.org/C26517878","wikidata":"https://www.wikidata.org/wiki/Q228039","display_name":"Key (lock)","level":2,"score":0.5257681012153625},{"id":"https://openalex.org/C177264268","wikidata":"https://www.wikidata.org/wiki/Q1514741","display_name":"Set (abstract data type)","level":2,"score":0.5191203951835632},{"id":"https://openalex.org/C134146338","wikidata":"https://www.wikidata.org/wiki/Q1815901","display_name":"Electronic circuit","level":2,"score":0.4838932454586029},{"id":"https://openalex.org/C113089479","wikidata":"https://www.wikidata.org/wiki/Q210729","display_name":"Electrical element","level":2,"score":0.4362509548664093},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.423954039812088},{"id":"https://openalex.org/C99498987","wikidata":"https://www.wikidata.org/wiki/Q2210247","display_name":"Noise (video)","level":3,"score":0.4145236015319824},{"id":"https://openalex.org/C118524514","wikidata":"https://www.wikidata.org/wiki/Q173212","display_name":"Computer architecture","level":1,"score":0.34991857409477234},{"id":"https://openalex.org/C98986596","wikidata":"https://www.wikidata.org/wiki/Q1143031","display_name":"Semiconductor memory","level":2,"score":0.3417378067970276},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.32092979550361633},{"id":"https://openalex.org/C92855701","wikidata":"https://www.wikidata.org/wiki/Q5830907","display_name":"Computer memory","level":3,"score":0.31703031063079834},{"id":"https://openalex.org/C87907426","wikidata":"https://www.wikidata.org/wiki/Q6815755","display_name":"Memory refresh","level":4,"score":0.24662691354751587},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.2264062464237213},{"id":"https://openalex.org/C154945302","wikidata":"https://www.wikidata.org/wiki/Q11660","display_name":"Artificial intelligence","level":1,"score":0.14915844798088074},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.13396212458610535},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.07464456558227539},{"id":"https://openalex.org/C199360897","wikidata":"https://www.wikidata.org/wiki/Q9143","display_name":"Programming language","level":1,"score":0.0},{"id":"https://openalex.org/C38652104","wikidata":"https://www.wikidata.org/wiki/Q3510521","display_name":"Computer security","level":1,"score":0.0},{"id":"https://openalex.org/C115961682","wikidata":"https://www.wikidata.org/wiki/Q860623","display_name":"Image (mathematics)","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/tcsi.2010.2078710","is_oa":false,"landing_page_url":"https://doi.org/10.1109/tcsi.2010.2078710","pdf_url":null,"source":{"id":"https://openalex.org/S116977442","display_name":"IEEE Transactions on Circuits and Systems I Regular Papers","issn_l":"1549-8328","issn":["1549-8328","1558-0806"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Transactions on Circuits and Systems I: Regular Papers","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":63,"referenced_works":["https://openalex.org/W1487331108","https://openalex.org/W1509810673","https://openalex.org/W1518236483","https://openalex.org/W1620265503","https://openalex.org/W1783145639","https://openalex.org/W1968288892","https://openalex.org/W1969813784","https://openalex.org/W1996514271","https://openalex.org/W2001759551","https://openalex.org/W2003872791","https://openalex.org/W2003942425","https://openalex.org/W2013055927","https://openalex.org/W2015088745","https://openalex.org/W2018258488","https://openalex.org/W2021162927","https://openalex.org/W2025674646","https://openalex.org/W2026913344","https://openalex.org/W2044207434","https://openalex.org/W2045009304","https://openalex.org/W2050111978","https://openalex.org/W2050715610","https://openalex.org/W2052476273","https://openalex.org/W2052888871","https://openalex.org/W2064632620","https://openalex.org/W2068007821","https://openalex.org/W2080391538","https://openalex.org/W2090120554","https://openalex.org/W2098603028","https://openalex.org/W2101834447","https://openalex.org/W2103531629","https://openalex.org/W2107969613","https://openalex.org/W2109631777","https://openalex.org/W2109987134","https://openalex.org/W2112181056","https://openalex.org/W2116597081","https://openalex.org/W2119569919","https://openalex.org/W2122148191","https://openalex.org/W2133362785","https://openalex.org/W2134223190","https://openalex.org/W2136288682","https://openalex.org/W2141071915","https://openalex.org/W2142388115","https://openalex.org/W2144277812","https://openalex.org/W2151202588","https://openalex.org/W2151654303","https://openalex.org/W2153690880","https://openalex.org/W2162651880","https://openalex.org/W2163054919","https://openalex.org/W2163105747","https://openalex.org/W2170185396","https://openalex.org/W2295453788","https://openalex.org/W2532566664","https://openalex.org/W2603064927","https://openalex.org/W2962900058","https://openalex.org/W3021750181","https://openalex.org/W3103381720","https://openalex.org/W3106114372","https://openalex.org/W4247151931","https://openalex.org/W4255230242","https://openalex.org/W6629092757","https://openalex.org/W6636407534","https://openalex.org/W6684643976","https://openalex.org/W6736339276"],"related_works":["https://openalex.org/W1968537616","https://openalex.org/W1567000137","https://openalex.org/W1494152240","https://openalex.org/W2149441930","https://openalex.org/W3140150102","https://openalex.org/W2158853180","https://openalex.org/W4281716957","https://openalex.org/W2106343578","https://openalex.org/W2547075610","https://openalex.org/W2969250002"],"abstract_inverted_index":{"Novel":[0],"nonvolatile":[1],"universal":[2],"memory":[3,74],"technology":[4],"is":[5,96],"essential":[6],"for":[7,11,17,58],"providing":[8],"required":[9],"storage":[10],"nanocomputing.":[12],"As":[13],"a":[14,32,50],"potential":[15],"contender":[16],"the":[18,21,82],"next-generation":[19],"memory,":[20],"recently":[22],"found":[23],"\"the":[24],"missing":[25],"fourth":[26],"circuit":[27],"element,\"":[28],"memristor,":[29],"has":[30],"drawn":[31],"great":[33],"deal":[34],"of":[35,53,84],"research":[36],"interests.":[37],"In":[38],"this":[39],"paper,":[40],"by":[41],"starting":[42],"from":[43],"basic":[44],"memristor":[45,59,69],"device":[46,70],"equations,":[47],"we":[48,80],"develop":[49],"comprehensive":[51],"set":[52],"properties":[54],"and":[55,86,89,94],"design":[56,83],"equations":[57],"based":[60],"memories.":[61],"Our":[62],"analyses":[63],"are":[64],"specifically":[65],"targeting":[66],"key":[67],"electrical":[68],"characteristics":[71],"relevant":[72],"to":[73],"operations.":[75],"Using":[76],"our":[77],"derived":[78],"properties,":[79],"investigate":[81],"read":[85],"write":[87],"circuits":[88],"analyze":[90],"important":[91],"data":[92],"integrity":[93],"noise-tolerance":[95],"sues.":[97]},"counts_by_year":[{"year":2026,"cited_by_count":2},{"year":2025,"cited_by_count":11},{"year":2024,"cited_by_count":13},{"year":2023,"cited_by_count":11},{"year":2022,"cited_by_count":12},{"year":2021,"cited_by_count":14},{"year":2020,"cited_by_count":23},{"year":2019,"cited_by_count":40},{"year":2018,"cited_by_count":25},{"year":2017,"cited_by_count":26},{"year":2016,"cited_by_count":41},{"year":2015,"cited_by_count":27},{"year":2014,"cited_by_count":39},{"year":2013,"cited_by_count":19},{"year":2012,"cited_by_count":22}],"updated_date":"2026-08-21T09:56:20.448147","created_date":"2025-10-10T00:00:00"}